CN109021833A - 用于抛光金属层的浆料组合物及制作半导体装置的方法 - Google Patents
用于抛光金属层的浆料组合物及制作半导体装置的方法 Download PDFInfo
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- CN109021833A CN109021833A CN201810596550.2A CN201810596550A CN109021833A CN 109021833 A CN109021833 A CN 109021833A CN 201810596550 A CN201810596550 A CN 201810596550A CN 109021833 A CN109021833 A CN 109021833A
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- Prior art keywords
- polishing
- metal layer
- weight
- iii
- paste compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 238000005498 polishing Methods 0.000 title claims abstract description 235
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 149
- 239000002184 metal Substances 0.000 title claims abstract description 149
- 150000001875 compounds Chemical class 0.000 title claims abstract description 82
- 238000000034 method Methods 0.000 title claims abstract description 45
- 239000004065 semiconductor Substances 0.000 title claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 title abstract description 12
- 230000001590 oxidative effect Effects 0.000 claims abstract description 38
- 239000002245 particle Substances 0.000 claims abstract description 38
- 239000007800 oxidant agent Substances 0.000 claims abstract description 37
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 18
- ACVYVLVWPXVTIT-UHFFFAOYSA-M phosphinate Chemical compound [O-][PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-M 0.000 claims abstract description 18
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims abstract description 15
- 229910019142 PO4 Inorganic materials 0.000 claims abstract description 13
- 239000010452 phosphate Substances 0.000 claims abstract description 13
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 10
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 10
- 150000003839 salts Chemical class 0.000 claims abstract description 9
- 125000005341 metaphosphate group Chemical group 0.000 claims abstract description 8
- 150000008301 phosphite esters Chemical class 0.000 claims abstract description 8
- 150000004968 peroxymonosulfuric acids Chemical class 0.000 claims description 30
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 21
- 239000000203 mixture Substances 0.000 claims description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 230000003647 oxidation Effects 0.000 claims description 11
- 238000007254 oxidation reaction Methods 0.000 claims description 11
- 238000011049 filling Methods 0.000 claims description 10
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Chemical compound [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 claims description 10
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 9
- 229910052721 tungsten Inorganic materials 0.000 claims description 9
- 239000010937 tungsten Substances 0.000 claims description 9
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 claims description 8
- LWIHDJKSTIGBAC-UHFFFAOYSA-K tripotassium phosphate Chemical compound [K+].[K+].[K+].[O-]P([O-])([O-])=O LWIHDJKSTIGBAC-UHFFFAOYSA-K 0.000 claims description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 7
- 239000011574 phosphorus Substances 0.000 claims description 7
- 229910052698 phosphorus Inorganic materials 0.000 claims description 7
- 229910052700 potassium Inorganic materials 0.000 claims description 7
- 239000011591 potassium Substances 0.000 claims description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 6
- 239000002253 acid Substances 0.000 claims description 6
- 229910001870 ammonium persulfate Inorganic materials 0.000 claims description 6
- 239000003795 chemical substances by application Substances 0.000 claims description 6
- MNNHAPBLZZVQHP-UHFFFAOYSA-N diammonium hydrogen phosphate Chemical compound [NH4+].[NH4+].OP([O-])([O-])=O MNNHAPBLZZVQHP-UHFFFAOYSA-N 0.000 claims description 6
- VCJMYUPGQJHHFU-UHFFFAOYSA-N iron(3+);trinitrate Chemical compound [Fe+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O VCJMYUPGQJHHFU-UHFFFAOYSA-N 0.000 claims description 6
- 229910052725 zinc Inorganic materials 0.000 claims description 6
- 239000011701 zinc Substances 0.000 claims description 6
- UEZVMMHDMIWARA-UHFFFAOYSA-N Metaphosphoric acid Chemical compound OP(=O)=O UEZVMMHDMIWARA-UHFFFAOYSA-N 0.000 claims description 5
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 5
- LHOWRPZTCLUDOI-UHFFFAOYSA-K iron(3+);triperchlorate Chemical compound [Fe+3].[O-]Cl(=O)(=O)=O.[O-]Cl(=O)(=O)=O.[O-]Cl(=O)(=O)=O LHOWRPZTCLUDOI-UHFFFAOYSA-K 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 4
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 claims description 4
- FWZTTZUKDVJDCM-CEJAUHOTSA-M disodium;(2r,3r,4s,5s,6r)-2-[(2s,3s,4s,5r)-3,4-dihydroxy-2,5-bis(hydroxymethyl)oxolan-2-yl]oxy-6-(hydroxymethyl)oxane-3,4,5-triol;iron(3+);oxygen(2-);hydroxide;trihydrate Chemical compound O.O.O.[OH-].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[Na+].[Na+].[Fe+3].[Fe+3].[Fe+3].[Fe+3].[Fe+3].O[C@H]1[C@H](O)[C@@H](CO)O[C@@]1(CO)O[C@@H]1[C@H](O)[C@@H](O)[C@H](O)[C@@H](CO)O1 FWZTTZUKDVJDCM-CEJAUHOTSA-M 0.000 claims description 4
- 150000002148 esters Chemical class 0.000 claims description 4
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 claims description 4
- 229940032961 iron sucrose Drugs 0.000 claims description 4
- RUTXIHLAWFEWGM-UHFFFAOYSA-H iron(3+) sulfate Chemical compound [Fe+3].[Fe+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O RUTXIHLAWFEWGM-UHFFFAOYSA-H 0.000 claims description 4
- 150000004965 peroxy acids Chemical class 0.000 claims description 4
- 229910000160 potassium phosphate Inorganic materials 0.000 claims description 4
- 235000011009 potassium phosphates Nutrition 0.000 claims description 4
- 239000001488 sodium phosphate Substances 0.000 claims description 4
- 229910000162 sodium phosphate Inorganic materials 0.000 claims description 4
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 claims description 4
- VJEVAXUMNMFKDT-UHFFFAOYSA-N 5,10,15,20-tetrakis(2,3,4,5,6-pentafluorophenyl)-21,23-dihydroporphyrin Chemical compound Fc1c(F)c(F)c(c(F)c1F)-c1c2ccc(n2)c(-c2c(F)c(F)c(F)c(F)c2F)c2ccc([nH]2)c(-c2c(F)c(F)c(F)c(F)c2F)c2ccc(n2)c(-c2c(F)c(F)c(F)c(F)c2F)c2ccc1[nH]2 VJEVAXUMNMFKDT-UHFFFAOYSA-N 0.000 claims description 3
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 claims description 3
- 239000004254 Ammonium phosphate Substances 0.000 claims description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 3
- VMQMZMRVKUZKQL-UHFFFAOYSA-N Cu+ Chemical compound [Cu+] VMQMZMRVKUZKQL-UHFFFAOYSA-N 0.000 claims description 3
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 claims description 3
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 claims description 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 3
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 3
- VEQPNABPJHWNSG-UHFFFAOYSA-N Nickel(2+) Chemical compound [Ni+2] VEQPNABPJHWNSG-UHFFFAOYSA-N 0.000 claims description 3
- TXTQARDVRPFFHL-UHFFFAOYSA-N [Sb].[H][H] Chemical compound [Sb].[H][H] TXTQARDVRPFFHL-UHFFFAOYSA-N 0.000 claims description 3
- GJYJYFHBOBUTBY-UHFFFAOYSA-N alpha-camphorene Chemical compound CC(C)=CCCC(=C)C1CCC(CCC=C(C)C)=CC1 GJYJYFHBOBUTBY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- ILRRQNADMUWWFW-UHFFFAOYSA-K aluminium phosphate Chemical compound O1[Al]2OP1(=O)O2 ILRRQNADMUWWFW-UHFFFAOYSA-K 0.000 claims description 3
- XGGLLRJQCZROSE-UHFFFAOYSA-K ammonium iron(iii) sulfate Chemical compound [NH4+].[Fe+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O XGGLLRJQCZROSE-UHFFFAOYSA-K 0.000 claims description 3
- 229910000148 ammonium phosphate Inorganic materials 0.000 claims description 3
- 235000019289 ammonium phosphates Nutrition 0.000 claims description 3
- ZCHPOKZMTJTNHI-UHFFFAOYSA-L barium(2+);sulfonatooxy sulfate Chemical compound [Ba+2].[O-]S(=O)(=O)OOS([O-])(=O)=O ZCHPOKZMTJTNHI-UHFFFAOYSA-L 0.000 claims description 3
- HUTDDBSSHVOYJR-UHFFFAOYSA-H bis[(2-oxo-1,3,2$l^{5},4$l^{2}-dioxaphosphaplumbetan-2-yl)oxy]lead Chemical compound [Pb+2].[Pb+2].[Pb+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O HUTDDBSSHVOYJR-UHFFFAOYSA-H 0.000 claims description 3
- 239000011575 calcium Substances 0.000 claims description 3
- 229910052791 calcium Inorganic materials 0.000 claims description 3
- 239000001506 calcium phosphate Substances 0.000 claims description 3
- 229910000389 calcium phosphate Inorganic materials 0.000 claims description 3
- 235000011010 calcium phosphates Nutrition 0.000 claims description 3
- FFQKYPRQEYGKAF-UHFFFAOYSA-N carbamoyl phosphate Chemical compound NC(=O)OP(O)(O)=O FFQKYPRQEYGKAF-UHFFFAOYSA-N 0.000 claims description 3
- UZEDIBTVIIJELN-UHFFFAOYSA-N chromium(2+) Chemical compound [Cr+2] UZEDIBTVIIJELN-UHFFFAOYSA-N 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- 229910000152 cobalt phosphate Inorganic materials 0.000 claims description 3
- ZBDSFTZNNQNSQM-UHFFFAOYSA-H cobalt(2+);diphosphate Chemical compound [Co+2].[Co+2].[Co+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O ZBDSFTZNNQNSQM-UHFFFAOYSA-H 0.000 claims description 3
- 229910000388 diammonium phosphate Inorganic materials 0.000 claims description 3
- 235000019838 diammonium phosphate Nutrition 0.000 claims description 3
- BNIILDVGGAEEIG-UHFFFAOYSA-L disodium hydrogen phosphate Chemical compound [Na+].[Na+].OP([O-])([O-])=O BNIILDVGGAEEIG-UHFFFAOYSA-L 0.000 claims description 3
- 239000011706 ferric diphosphate Substances 0.000 claims description 3
- 235000007144 ferric diphosphate Nutrition 0.000 claims description 3
- VEPSWGHMGZQCIN-UHFFFAOYSA-H ferric oxalate Chemical compound [Fe+3].[Fe+3].[O-]C(=O)C([O-])=O.[O-]C(=O)C([O-])=O.[O-]C(=O)C([O-])=O VEPSWGHMGZQCIN-UHFFFAOYSA-H 0.000 claims description 3
- CADNYOZXMIKYPR-UHFFFAOYSA-B ferric pyrophosphate Chemical compound [Fe+3].[Fe+3].[Fe+3].[Fe+3].[O-]P([O-])(=O)OP([O-])([O-])=O.[O-]P([O-])(=O)OP([O-])([O-])=O.[O-]P([O-])(=O)OP([O-])([O-])=O CADNYOZXMIKYPR-UHFFFAOYSA-B 0.000 claims description 3
- HHLFWLYXYJOTON-UHFFFAOYSA-N glyoxylic acid Chemical compound OC(=O)C=O HHLFWLYXYJOTON-UHFFFAOYSA-N 0.000 claims description 3
- CPSYWNLKRDURMG-UHFFFAOYSA-L hydron;manganese(2+);phosphate Chemical compound [Mn+2].OP([O-])([O-])=O CPSYWNLKRDURMG-UHFFFAOYSA-L 0.000 claims description 3
- -1 iron (III) compound Chemical class 0.000 claims description 3
- DCYOBGZUOMKFPA-UHFFFAOYSA-N iron(2+);iron(3+);octadecacyanide Chemical compound [Fe+2].[Fe+2].[Fe+2].[Fe+3].[Fe+3].[Fe+3].[Fe+3].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-] DCYOBGZUOMKFPA-UHFFFAOYSA-N 0.000 claims description 3
- WBJZTOZJJYAKHQ-UHFFFAOYSA-K iron(3+) phosphate Chemical compound [Fe+3].[O-]P([O-])([O-])=O WBJZTOZJJYAKHQ-UHFFFAOYSA-K 0.000 claims description 3
- PVFSDGKDKFSOTB-UHFFFAOYSA-K iron(3+);triacetate Chemical compound [Fe+3].CC([O-])=O.CC([O-])=O.CC([O-])=O PVFSDGKDKFSOTB-UHFFFAOYSA-K 0.000 claims description 3
- HEJPGFRXUXOTGM-UHFFFAOYSA-K iron(3+);triiodide Chemical compound [Fe+3].[I-].[I-].[I-] HEJPGFRXUXOTGM-UHFFFAOYSA-K 0.000 claims description 3
- 229910000399 iron(III) phosphate Inorganic materials 0.000 claims description 3
- 229910000360 iron(III) sulfate Inorganic materials 0.000 claims description 3
- 229910052744 lithium Inorganic materials 0.000 claims description 3
- GVALZJMUIHGIMD-UHFFFAOYSA-H magnesium phosphate Chemical compound [Mg+2].[Mg+2].[Mg+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O GVALZJMUIHGIMD-UHFFFAOYSA-H 0.000 claims description 3
- 239000004137 magnesium phosphate Substances 0.000 claims description 3
- 229910000157 magnesium phosphate Inorganic materials 0.000 claims description 3
- 229960002261 magnesium phosphate Drugs 0.000 claims description 3
- 235000010994 magnesium phosphates Nutrition 0.000 claims description 3
- FLFJVPPJGJSHMF-UHFFFAOYSA-L manganese hypophosphite Chemical compound [Mn+2].[O-]P=O.[O-]P=O FLFJVPPJGJSHMF-UHFFFAOYSA-L 0.000 claims description 3
- 229910000402 monopotassium phosphate Inorganic materials 0.000 claims description 3
- 235000019796 monopotassium phosphate Nutrition 0.000 claims description 3
- 229910000159 nickel phosphate Inorganic materials 0.000 claims description 3
- JOCJYBPHESYFOK-UHFFFAOYSA-K nickel(3+);phosphate Chemical compound [Ni+3].[O-]P([O-])([O-])=O JOCJYBPHESYFOK-UHFFFAOYSA-K 0.000 claims description 3
- PJNZPQUBCPKICU-UHFFFAOYSA-N phosphoric acid;potassium Chemical compound [K].OP(O)(O)=O PJNZPQUBCPKICU-UHFFFAOYSA-N 0.000 claims description 3
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910052708 sodium Inorganic materials 0.000 claims description 3
- 239000011734 sodium Substances 0.000 claims description 3
- GCLGEJMYGQKIIW-UHFFFAOYSA-H sodium hexametaphosphate Chemical compound [Na]OP1(=O)OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])O1 GCLGEJMYGQKIIW-UHFFFAOYSA-H 0.000 claims description 3
- 229910001379 sodium hypophosphite Inorganic materials 0.000 claims description 3
- 239000004408 titanium dioxide Substances 0.000 claims description 3
- FEONEKOZSGPOFN-UHFFFAOYSA-K tribromoiron Chemical compound Br[Fe](Br)Br FEONEKOZSGPOFN-UHFFFAOYSA-K 0.000 claims description 3
- QORWJWZARLRLPR-UHFFFAOYSA-H tricalcium bis(phosphate) Chemical compound [Ca+2].[Ca+2].[Ca+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O QORWJWZARLRLPR-UHFFFAOYSA-H 0.000 claims description 3
- 239000005955 Ferric phosphate Substances 0.000 claims description 2
- SZMWLGOTGAUGMD-UHFFFAOYSA-N [Fe+]C#N Chemical compound [Fe+]C#N SZMWLGOTGAUGMD-UHFFFAOYSA-N 0.000 claims description 2
- JYUXHJKMLPFDPA-UHFFFAOYSA-N [O--].CC(C)[Fe++] Chemical compound [O--].CC(C)[Fe++] JYUXHJKMLPFDPA-UHFFFAOYSA-N 0.000 claims description 2
- RTQAECAPCNOQCX-UHFFFAOYSA-N [V].[PH2](=O)O Chemical compound [V].[PH2](=O)O RTQAECAPCNOQCX-UHFFFAOYSA-N 0.000 claims description 2
- 125000000218 acetic acid group Chemical group C(C)(=O)* 0.000 claims description 2
- VETKVGYBAMGARK-UHFFFAOYSA-N arsanylidyneiron Chemical compound [As]#[Fe] VETKVGYBAMGARK-UHFFFAOYSA-N 0.000 claims description 2
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 2
- 229910002113 barium titanate Inorganic materials 0.000 claims description 2
- 229910001382 calcium hypophosphite Inorganic materials 0.000 claims description 2
- 229940064002 calcium hypophosphite Drugs 0.000 claims description 2
- 150000004649 carbonic acid derivatives Chemical class 0.000 claims description 2
- 238000005660 chlorination reaction Methods 0.000 claims description 2
- ZPWVASYFFYYZEW-UHFFFAOYSA-L dipotassium hydrogen phosphate Chemical compound [K+].[K+].OP([O-])([O-])=O ZPWVASYFFYYZEW-UHFFFAOYSA-L 0.000 claims description 2
- JZBWUTVDIDNCMW-UHFFFAOYSA-L dipotassium;oxido sulfate Chemical compound [K+].[K+].[O-]OS([O-])(=O)=O JZBWUTVDIDNCMW-UHFFFAOYSA-L 0.000 claims description 2
- 229940032958 ferric phosphate Drugs 0.000 claims description 2
- 229940036404 ferric pyrophosphate Drugs 0.000 claims description 2
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 claims description 2
- GNOIPBMMFNIUFM-UHFFFAOYSA-N hexamethylphosphoric triamide Chemical compound CN(C)P(=O)(N(C)C)N(C)C GNOIPBMMFNIUFM-UHFFFAOYSA-N 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- FBAFATDZDUQKNH-UHFFFAOYSA-M iron chloride Chemical compound [Cl-].[Fe] FBAFATDZDUQKNH-UHFFFAOYSA-M 0.000 claims description 2
- CASZBAVUIZZLOB-UHFFFAOYSA-N lithium iron(2+) oxygen(2-) Chemical compound [O-2].[Fe+2].[Li+] CASZBAVUIZZLOB-UHFFFAOYSA-N 0.000 claims description 2
- LVIYYTJTOKJJOC-UHFFFAOYSA-N nickel phthalocyanine Chemical compound [Ni+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 LVIYYTJTOKJJOC-UHFFFAOYSA-N 0.000 claims description 2
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 claims description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 2
- GNSKLFRGEWLPPA-UHFFFAOYSA-M potassium dihydrogen phosphate Chemical compound [K+].OP(O)([O-])=O GNSKLFRGEWLPPA-UHFFFAOYSA-M 0.000 claims description 2
- 235000019394 potassium persulphate Nutrition 0.000 claims description 2
- 235000019983 sodium metaphosphate Nutrition 0.000 claims description 2
- UGTZMIPZNRIWHX-UHFFFAOYSA-K sodium trimetaphosphate Chemical compound [Na+].[Na+].[Na+].[O-]P1(=O)OP([O-])(=O)OP([O-])(=O)O1 UGTZMIPZNRIWHX-UHFFFAOYSA-K 0.000 claims description 2
- CNALVHVMBXLLIY-IUCAKERBSA-N tert-butyl n-[(3s,5s)-5-methylpiperidin-3-yl]carbamate Chemical compound C[C@@H]1CNC[C@@H](NC(=O)OC(C)(C)C)C1 CNALVHVMBXLLIY-IUCAKERBSA-N 0.000 claims description 2
- XHGIFBQQEGRTPB-UHFFFAOYSA-N tris(prop-2-enyl) phosphate Chemical compound C=CCOP(=O)(OCC=C)OCC=C XHGIFBQQEGRTPB-UHFFFAOYSA-N 0.000 claims description 2
- 229910052720 vanadium Inorganic materials 0.000 claims description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 2
- KBPZVLXARDTGGD-UHFFFAOYSA-N 2,3-dihydroxybutanedioic acid;iron Chemical compound [Fe].OC(=O)C(O)C(O)C(O)=O KBPZVLXARDTGGD-UHFFFAOYSA-N 0.000 claims 1
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- JXGGISJJMPYXGJ-UHFFFAOYSA-N lithium;oxido(oxo)iron Chemical compound [Li+].[O-][Fe]=O JXGGISJJMPYXGJ-UHFFFAOYSA-N 0.000 description 1
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
- 239000000347 magnesium hydroxide Substances 0.000 description 1
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N n-propyl alcohol Natural products CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 1
- HJKYXKSLRZKNSI-UHFFFAOYSA-I pentapotassium;hydrogen sulfate;oxido sulfate;sulfuric acid Chemical compound [K+].[K+].[K+].[K+].[K+].OS([O-])(=O)=O.[O-]S([O-])(=O)=O.OS(=O)(=O)O[O-].OS(=O)(=O)O[O-] HJKYXKSLRZKNSI-UHFFFAOYSA-I 0.000 description 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-M perchlorate Inorganic materials [O-]Cl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-M 0.000 description 1
- 125000000864 peroxy group Chemical group O(O*)* 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- QVLTXCYWHPZMCA-UHFFFAOYSA-N po4-po4 Chemical compound OP(O)(O)=O.OP(O)(O)=O QVLTXCYWHPZMCA-UHFFFAOYSA-N 0.000 description 1
- 229940045916 polymetaphosphate Drugs 0.000 description 1
- OQZCJRJRGMMSGK-UHFFFAOYSA-M potassium metaphosphate Chemical compound [K+].[O-]P(=O)=O OQZCJRJRGMMSGK-UHFFFAOYSA-M 0.000 description 1
- 229940099402 potassium metaphosphate Drugs 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 229960004889 salicylic acid Drugs 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 229940045919 sodium polymetaphosphate Drugs 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- SUZJDLRVEPUNJG-UHFFFAOYSA-K tripotassium 2,4,6-trioxido-1,3,5,2lambda5,4lambda5,6lambda5-trioxatriphosphinane 2,4,6-trioxide Chemical compound [K+].[K+].[K+].[O-]P1(=O)OP([O-])(=O)OP([O-])(=O)O1 SUZJDLRVEPUNJG-UHFFFAOYSA-K 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- C09G1/00—Polishing compositions
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Abstract
本揭露提供一种用于抛光金属层的浆料组合物及一种使用所述浆料组合物制作半导体装置的方法。用于抛光金属层的浆料组合物包括:包含金属氧化物的抛光颗粒;包含过氧化氢的氧化剂;以及包含选自由磷酸酯、亚磷酸酯、次磷酸酯、偏磷酸酯及其盐组成的群组的至少一者的第一抛光调节剂,其中以100重量%的所述用于抛光金属层的浆料组合物计,氧化剂的含量是0.01重量%到0.09重量%。本揭露的浆料组合物可提供高抛光速率。
Description
本申请主张在2017年6月12日在韩国知识产权局提出申请的韩国专利申请第10-2017-0073205号的优先权,所述韩国专利申请的公开内容全文并入本申请供参考。
技术领域
本发明概念涉及一种用于抛光金属层的浆料组合物及一种制作半导体装置的方法。具体来说,本发明概念涉及一种包含抛光调节剂的用于抛光金属层的浆料组合物及一种使用所述浆料组合物制作半导体装置的方法。
背景技术
在层的平坦化工艺中,可利用例如回蚀工艺(etch-back process)、回流工艺(reflow process)、化学机械抛光(chemical mechanical polishing,CMP)工艺等。化学机械抛光工艺有利于大面积平坦化。
在化学机械抛光工艺中,将要抛光的抛光目标安装在抛光设备上,且可在抛光目标与抛光垫(polishing pad)之间提供含有抛光剂的浆料组合物。同时,通过在使抛光目标接触抛光垫的状态下旋转抛光目标,可将抛光目标的表面平坦化。即,化学机械抛光工艺是包括以下步骤的工艺:通过使浆料组合物中含有的抛光剂及抛光垫的表面突出部与抛光目标的表面机械摩擦对抛光目标的表面进行机械抛光;以及通过使浆料组合物中含有的化学成分与抛光目标的表面彼此发生化学反应而以化学方式移除抛光目标的表面。
同时,用于抛光金属层的浆料中所使用的氧化剂可造成对金属层的过度氧化蚀刻。此种氧化蚀刻可能会加剧抛光工艺后的金属层的表面粗糙度,且可降低利用此抛光工艺制作的半导体装置的电特性。尽管可使用氧化剂含量降低的用于抛光金属层的浆料,然而此种浆料可能存在显著降低抛光速率(polishing rate)的问题。
发明内容
本发明概念的一方面提供一种使氧化蚀刻(oxidative etching)最小化且提供高抛光速率的用于抛光金属层的浆料组合物。
本发明概念的另一方面提供一种改善半导体装置的电特性的用于制作半导体装置的方法。
根据本发明概念的方面,提供一种用于抛光金属层的浆料组合物,所述浆料组合物包括:含有金属氧化物的抛光颗粒;含有过氧化氢的氧化剂;以及含有选自由磷酸酯、亚磷酸酯、次磷酸酯、偏磷酸酯及其盐组成的群组的至少一者的第一抛光调节剂,其中以100重量%的所述用于抛光金属层的浆料组合物计,氧化剂的含量是0.01重量%到0.09重量%。
根据本发明概念的方面,提供一种用于抛光金属层的浆料组合物,所述浆料组合物包含抛光颗粒、氧化剂及抛光调节剂,其中以100重量%的所述用于抛光金属层的浆料组合物计,所述抛光调节剂包含:1重量%到6重量%的第一抛光调节剂,所述第一抛光调节剂含有选自由磷酸酯、亚磷酸酯、次磷酸酯、偏磷酸酯及其盐组成的群组的至少一者;1重量%到5重量%的第二抛光调节剂,所述第二抛光调节剂含有过硫酸盐;以及1重量到%3重量%的第三抛光调节剂,所述第三抛光调节剂含有铁(III)化合物。
根据本发明概念的方面,提供一种制作半导体装置的方法,所述方法包括:在基底中形成沟槽;形成填充所述沟槽的金属层;以及使用用于抛光所述金属层的浆料组合物将所述金属层的上表面平坦化,其中所述用于抛光金属层的浆料组合物包含:含有金属氧化物的抛光颗粒;含有过氧化氢的氧化剂;以及含有选自由磷酸酯、亚磷酸酯、次磷酸酯、偏磷酸酯及其盐组成的群组的至少一者的第一抛光调节剂,以100重量%的所述用于抛光金属层的浆料组合物计,氧化剂的含量是0.01重量%到0.09重量%。
附图说明
通过参照附图详细阐述本发明概念的示例性实施例,本发明概念的以上及其他方面及特征将变得更显而易见,在附图中:
图1到图7是用于解释根据本发明概念的一些实施例的一种制作半导体装置的方法的中间步骤图。
具体实施方式
以下,将参照实施例及附图来阐述根据本发明概念的一些实施例的用于抛光金属层的浆料组合物。然而,本发明概念并非仅限于所述实施例及附图。
根据一些实施例的用于抛光金属层的浆料组合物防止对要抛光的金属层的过度氧化蚀刻,从而使得可充分降低金属层的表面粗糙度且确保充分抛光。根据一些实施例的用于抛光金属层的浆料组合物可包含抛光颗粒、氧化剂、第一抛光调节剂及溶剂。
抛光颗粒可用作浆料组合物的抛光剂。抛光颗粒包含金属氧化物。举例来说,抛光颗粒可包含选自由金属氧化物、涂布有有机物质或无机物质的金属氧化物及胶态金属氧化物组成的群组的至少任一者。此外,举例来说,金属氧化物可包括选自由二氧化硅、二氧化铈、氧化锆、氧化铝、二氧化钛、钛酸钡、氧化锗、氧化锰及氧化镁组成的群组的至少任一者。
抛光颗粒的形状可为球形形状、正方形形状、针状形状或板状形状。
抛光颗粒的尺寸可介于40nm到130nm范围内。当抛光颗粒的尺寸小于40nm时,在化学机械抛光工艺中可能无法确保足够的抛光速率。当抛光颗粒的尺寸超过130nm时,抛光速率会显著增大。此外,这使得难以调整抛光选择性,且可能产生凹陷(dishing)缺陷、侵蚀缺陷及表面缺陷。
抛光颗粒可包括单一尺寸的颗粒,但也可包括通过用两种或更多种进行混合而得到的尺寸的颗粒。举例来说,抛光颗粒的尺寸在制作工艺期间进行调整,且可具有其中混合有两种颗粒的双峰(bimodal)形式的粒径分布(particle size distribution)。作为另一选择,抛光颗粒可具有其中混合有三种颗粒而表现出三个峰的粒径分布。由于尺寸相对较大的抛光颗粒与尺寸相对较小的抛光颗粒相互混合,因此总体抛光颗粒可具有优异的可分散性。此外,此类抛光颗粒也可减少对抛光目标的刮擦。
以100重量%的用于抛光金属层的浆料组合物计,抛光颗粒的含量可为1重量%到6重量%。当抛光颗粒的含量小于1重量%时,在化学机械抛光工艺中可能无法确保足够的抛光速率。当抛光颗粒的含量超过6重量%时,抛光速率会过度增大且可能产生过度抛光。另外,随着抛光颗粒的数目增加,至少由于残留在抛光目标的表面上的颗粒吸附性(adsorbability),可能会在经抛光物体中出现表面缺陷。抛光调节剂充当提高抛光速率的调理剂(conditioning agent)。
氧化剂可包含过氧化物系化合物。举例来说,氧化剂可包含过氧化氢。当抛光目标是金属层时,氧化剂可具有比抛光目标高的氧化/还原电势(oxidation/reductionpotential)。即,可通过在化学机械抛光工艺中将金属层氧化来移除氧化剂。
以100重量%的用于抛光金属层的浆料组合物计,氧化剂的含量可为0.01重量%到0.09重量%。当氧化剂的含量为0.01重量%或大于0.01重量%时,可在化学机械抛光工艺中确保足够的抛光速率。当氧化剂的含量为0.09重量%或小于0.09重量%时,可通过防止对要抛光的金属层的过度氧化蚀刻来充分降低抛光后的金属层的表面粗糙度。更优选地,以100重量%的用于抛光金属层的浆料组合物计,氧化剂的含量可为0.03重量%到0.07重量%。
第一抛光调节剂可为含有选自由磷酸酯(phosphate)、亚磷酸酯(phosphite)、次磷酸酯(hypophosphite)及偏磷酸酯(metaphosphate)或其盐组成的群组的至少一者的化合物。
举例来说,第一抛光调节剂可包含选自由以下组成的群组的至少一者:磷酸钾(potassium phosphate)、磷酸一氢钾(potassium monohydrogen phosphate)、磷酸二氢钾(potassium dihydrogen phosphate)、磷酸铵(ammonium phosphate)、磷酸一铵(monoammonium phosphate)、磷酸氢二铵(diammonium hydrogen phosphate)、磷酸铝(aluminum phosphate)、磷酸钠(sodium phosphate)、磷酸氢二钠(disodium hydrogenphosphate)、氨甲酰磷酸(carbamoyl phosphate)、磷酸钙(calcium phosphate)、磷酸三烯丙酯(triallyl phosphate)、磷酸钒(vanadium phosphate)、磷酸镁(magnesiumphosphate)、次磷酸铝(aluminum hypophosphite)、次磷酸钒(vanadium hypophosphite)、次磷酸锰(manganese hypophosphite)、次磷酸锌(zinc hypophosphite)、次磷酸镍(nickel hypophosphite)、次磷酸钴(cobalt hypophosphite)、次磷酸铵(ammoniumhypophosphite)、次磷酸钾(potassium hypophosphite)、磷酸锰(manganese phosphate)、磷酸铅(lead phosphate)、磷酸镍(nickel phosphate)、磷酸钴(cobalt phosphate)、三偏磷酸钠(sodium trimetaphosphate)、五偏磷酸钠(sodium pentametaphosphate)、六偏磷酸钠(sodium hexametaphosphate)、聚偏磷酸钠(sodium polymetaphosphate)、次磷酸钠(sodium hypophosphite)、三偏磷酸铵(ammonium trimetaphosphate)、五偏磷酸铵(ammonium pentametaphosphate)、六偏磷酸铵(ammonium hexametaphosphate)、聚偏磷酸铵(ammonium polymetaphosphate)、三偏磷酸钾(potassium trimetaphosphate)、六偏磷酸钾(potassium hexametaphosphate)、聚偏磷酸钾(potassium polymetaphosphate)及次磷酸钙(calcium hypophosphite)。然而,本公开并非仅限于此。
以100重量%的用于抛光金属层的浆料组合物计,第一抛光调节剂的含量可为1重量%到6重量%。当第一抛光调节剂的含量为1重量%或大于1重量%时,在化学机械抛光工艺中可确保足够的抛光速率。当第一抛光调节剂的含量为6重量%或小于6重量%时,可充分防止对要抛光的金属层的过度氧化蚀刻。更优选地,以100重量%的用于抛光金属层的浆料组合物计,第一抛光调节剂的含量可为1.5重量%到5重量%。
溶剂可包括去离子水。溶剂还可充当分散介质。举例来说,上述溶剂可为与容易溶解在溶剂中的物质(例如第一抛光调节剂)有关的溶剂。然而,溶剂还可充当与细颗粒(fineparticle)(例如抛光颗粒)有关的分散介质。即,尽管上述溶剂可充当溶剂但同时充当分散介质,然而如所属领域中的技术人员将理解,在本说明书中为方便起见,将其称为“溶剂”。
溶剂可包含在用于抛光金属层的浆料组合物的剩余部分中。
用于抛光金属层的浆料中所使用的氧化剂可引起对金属层的过度氧化蚀刻。氧化蚀刻可能会加剧抛光工艺后的金属层的表面粗糙度,且可降低利用此抛光工艺制作的半导体装置的电特性。
因此,根据本发明概念的技术概念的一些实施例的用于抛光金属层的浆料组合物可含有少量的氧化剂以使对金属层的氧化蚀刻最小化。如上所述,用于抛光金属层的浆料组合物可仅含有0.01重量%到0.09重量%的氧化剂以使对金属层的氧化蚀刻最小化。
然而,氧化剂含量降低的用于抛光金属层的浆料存在会显著降低抛光速率的问题。因此,根据本发明概念的一些实施例的用于抛光金属层的浆料组合物可包含第一抛光调节剂来提高抛光速率。
第一抛光调节剂可与氧化剂的至少一部分反应以生成过氧酸。举例来说,含有磷酸酯(phosphate)的第一抛光调节剂可与过氧化氢反应以生成过氧(单)磷酸(peroxy(mono)phosphoric acid)。
从第一抛光调节剂产生的过氧酸可有助于移除要抛光的金属层。具体来说,从第一抛光调节剂产生的过氧酸可增加要抛光的金属层的表面氧化量。举例来说,当抛光目标是钨层时,从含有磷酸酯(phosphate)的第一抛光调节剂产生的过氧(单)磷酸可增加钨层的表面氧化量。因此,第一抛光调节剂可在化学机械抛光工艺中提高抛光速率。
即,根据本发明概念的一些实施例的用于抛光金属层的浆料组合物防止对要抛光的金属层的过度氧化蚀刻,从而使得可充分降低金属层的表面粗糙度且确保足够的抛光速率。因此,用于抛光金属层的浆料组合物可改进下一代高度集成工艺。
根据一些实施例的用于抛光金属层的浆料组合物还可包含第二抛光调节剂。
第二抛光调节剂可包含过硫酸盐(persulfate)或含有过硫酸盐的化合物。
举例来说,第二抛光调节剂可包含选自由以下组成的群组的至少一者:过硫酸铵(ammonium persulfate)、过硫酸钠(sodium persulfate)、过硫酸钾(potassiumpersulfate)、过硫酸铁(II)(iron(II)persulfate)、过硫酸铅(II)(lead(II)persulfate)、过硫酸铁(III)(iron(III)persulfate)、过硫酸锡(IV)(tin(IV)persulfate)、过硫酸铅(IV)(lead(IV)persulfate)、过硫酸镍(II)(nickel(II)persulfate)、过硫酸锡(II)(tin(II)persulfate)、过硫酸锑(III)(antimony(III)persulfate)、过硫酸铜(I)(copper(I)persulfate)、过硫酸铜(II)(copper(II)persulfate)、过硫酸铝(aluminum persulfate)、过硫酸银(silver persulfate)、过硫酸锰(manganese persulfate)、过硫酸钙(calcium persulfate)、过硫酸锌(zincpersulfate)、过硫酸钡(barium persulfate)、过硫酸铬(II)(chromium(II)persulfate)、过硫酸锂(lithium persulfate)、单过硫酸钾(potassium monopersulfate)、单过硫酸钠(sodium monopersulfate)及过硫酸(persulfuric acid)。然而,本公开并非仅限于此。
以100重量%的用于抛光金属层的浆料组合物计,第二抛光调节剂的含量可为1重量%到5重量%。当第二抛光调节剂的含量小于1重量%时,在化学机械抛光工艺中可能无法确保足够的抛光速率。当第二抛光调节剂的含量超过5重量%时,用于抛光金属层的浆料组合物的分散稳定性可能会降低。
根据一些实施例的用于抛光金属层的浆料组合物还可包含第三抛光调节剂。
第三抛光调节剂可包含铁(III)或含有铁(III)的化合物。
举例来说,第三抛光调节剂可包含选自由以下组成的群组的至少一者:蔗糖铁(iron sucrose)、氧化铁(III)(iron(III)oxide)、乙酸铁(III)(iron(III)acetate)、硫酸铁(III)(iron(III)sulfate)、氧化锂铁(III)(lithium iron(III)oxide)、磷酸铁(III)(iron(III)phosphate)、焦磷酸铁(III)(iron(III)pyrophosphate)、铁(III)离子载体IV(iron(III)ionophore IV)、六氰基铁(II)酸铵铁(III)(ammonium iron(III)hexacyanoferrate(II))、亚铁氰化铁(III)(iron(III)ferrocyanide)、异丙氧化铁(III)(iron(III)i-propoxide)、氧代乙酸高氯酸铁(III)(iron(III)oxo acetateperchlorate)、柠檬酸铵铁(III)(ammonium iron(III)citrate)、二碳酸铁(III)(iron(III)dicarbonate)、乙酰丙酮铁(III)(iron(III)acetylacetonate)、溴化铁(III)(iron(III)bromide)、氯化铁(III)(iron(III)chloride)、砷化铁(III)(iron(III)arsenide)、草酸铁(III)(iron(III)oxalate)、草酸铵铁(III)(ammonium iron(III)oxalate)、氟化铁(III)(iron(III)fluoride)、碘化铁(III)(iron(III)iodide)、硝酸铁(III)(iron(III)nitrate)、氯化酞菁铁(III)(iron(III)phthalocyanine chloride)、高氯酸铁(III)(iron(III)perchlorate)、硫酸铁(III)(iron(III)sulphate)、硫酸铵铁(III)(ammonium iron(III)sulphate)及酒石酸铁(III)(iron(III)tartrate)。然而,本公开并非仅限于此。
以100重量%的用于抛光金属层的浆料组合物计,第三抛光调节剂的含量可为1重量%到5重量%。当第三抛光调节剂的含量小于1重量%时,在化学机械抛光工艺中可能无法确保足够的抛光速率。当第三抛光调节剂的含量超过5重量%时,用于抛光金属层的浆料组合物的分散稳定性可能会降低。
根据一些实施例的用于抛光金属层的浆料组合物还可包含pH调整剂。
pH调整剂可调整pH的范围,以防止对抛光目标或抛光设备的腐蚀且有利于要抛光的金属层的氧化。
pH调整剂可包含含有选自由以下组成的群组的至少一者的酸性物质:盐酸、磷酸、硫酸、氢氟酸、溴酸、碘酸、甲酸、丙二酸、顺丁烯二酸、草酸、乙酸、己二酸、柠檬酸、丙酸、反丁烯二酸、乳酸、水杨酸、庚二酸、苯甲酸、琥珀酸、邻苯二甲酸、丁酸、戊二酸、谷氨酸、乙醇酸、天冬氨酸、酒石酸、及其盐。
pH调整剂可包含含有选自由以下组成的群组的至少一者的碱性物质:氨、铵甲基丙醇(ammonium methyl propanol,AMP)、四甲基氢氧化铵(tetra methyl ammoniumhydroxide,TMAH)、氢氧化钾、氢氧化钠、氢氧化镁、氢氧化铷、氢氧化铯、碳酸氢钠、碳酸钠及咪唑。
以下,将参照以下实例来具体阐述本发明概念。以下实施例仅用于解释本发明概念,且本公开并非仅限于此。
[实例1]
将作为抛光颗粒的粒径为100nm的二氧化硅3.0重量%、作为氧化剂的过氧化氢0.05重量%、作为第一抛光调节剂的磷酸钾3.0重量%、作为第二抛光调节剂的过硫酸铵3重量%及作为第三抛光调节剂的蔗糖铁3重量%相互混合,以制作用于抛光金属层的浆料组合物。
[实例2]
除了将在实例1中的第一抛光调节剂的含量变为1.5重量%以外,以与实例1相同的方式制作了用于抛光金属层的浆料组合物。
[实例3]
除了将在实例1中的第一抛光调节剂的含量变为5.0重量%以外,以与实例1相同的方式制作了用于抛光金属层的浆料组合物。
[实例4]
除了将在实例1中的氧化剂的含量变为0.07重量%以外,以与实例1相同的方式制作了用于抛光金属层的浆料组合物。
[实例5]
除了将实例1中的氧化剂的含量变为0.08重量%以外,以与实例1相同的方式制作了用于抛光金属层的浆料组合物。
[比较例1]
除了不使用在实例1中的第一抛光调节剂以外,以与实例1相同的方式制作了用于抛光金属层的浆料组合物。
[比较例2]
除了将在实例1中的第一抛光调节剂的含量变为0.5重量%以外,以与实例1相同的方式制作了用于抛光金属层的浆料组合物。
[比较例3]
除了将在实例1中的将第一抛光调节剂的含量变为7.0重量%以外,以与实例1相同的方式制作了用于抛光金属层的浆料组合物。
[比较例4]
除了将在实例1中的氧化剂的含量变为0.1重量%以外,以与实例1相同的方式制作了用于抛光金属层的浆料组合物。
[比较例5]
除了将在实例1中的氧化剂的含量变为0.3重量%以外,以与实例1相同的方式制作了用于抛光金属层的浆料组合物。
氧化剂的含量、第一抛光调节剂的含量及抛光速率(RR:移除率)、静态蚀刻速率(Static Etch Rate,SER)以及实例1到实例5及比较例1到比较例5的表面粗糙度的值示于下表1中。
[表1]
[抛光速率的测量方法]
使用ST01 300(mm,由凯蒂科技公司(KTTECH)制造)作为抛光设备,且使用KPX垫作为垫。在以下抛光条件下对厚度为的钨层进行了抛光:压力为3.0psi、温度为25℃、抛光时间为30秒、压板速度(platen speed)为100rpm、杆头速度(head speed)为103rpm且浆料流速为200ml/min。
[静态蚀刻速率的测量方法]
将厚度为的钨试片(coupon)晶片(2cm2)浸没在60℃的含有30g用于抛光金属层的浆料组合物的容器中达10分钟并接着进行了洗涤。然后,使用4点探针(4pointprobe),在晶片的中心处每隔5mm在垂直方向及水平方向上对浸没之前及之后的钨晶片的厚度进行了测量,且接着计算出了静态蚀刻速率(SER)的值。可通过以下方程式1来计算静态蚀刻速率(SER)的值,且其单位是
[方程式1]
SER=(浸没前的晶片的厚度-浸没后的晶片的厚度)/10
[表面粗糙度的测量方法]
使用XE-100(PSIA公司(PSIA Inc.))作为表面粗糙度测量装置,且将扫描尺寸(scan size)测量为10μm。
如表1所示,可以理解,实例1到实例5具有为或大于200的高抛光速率以及具有为或小于的低静态蚀刻速率。此外,使用实例1到实例5的用于抛光金属层的浆料组合物进行抛光的钨试片晶片表现出相对低的表面粗糙度。
具体来说,将实例1与比较例1进行比较,可以理解,当用于抛光金属层的浆料组合物含有第一抛光调节剂时,抛光速率显著增加。此外,可以理解,当用于抛光金属层的浆料组合物含有第一抛光调节剂时,静态蚀刻速率显著降低且表现出低的表面粗糙度。
将实例2与比较例2进行比较,可以理解,当第一抛光调节剂的含量是1重量%或大于1重量%时,表现出较高的抛光速率。此时,可以理解,实例2的静态蚀刻速率是且表面粗糙度是1.53nm,实例2表现出仍然较低的静态蚀刻速率及表面粗糙度。
将实例3与比较例3进行比较,可以理解,当第一抛光调节剂的含量是6重量%或小于6重量%时,表现出较低的静态抛光速率及表面粗糙度。此时,可以理解,实例3的抛光速率是且表现出仍然高的抛光速率。
将实例4、实例5、比较例4及比较例5相互比较,可以理解,当氧化剂的含量是0.09重量%或小于0.09重量%时,静态蚀刻速率及表面粗糙度显著降低。此时,可以理解,实例4及实例5的抛光速率表现出分别为 及的仍然高的抛光速率。
以下,将参照图1到图7来阐述根据本发明概念的一些实施例的一种制作半导体装置的方法。
图1到图7是用于解释根据本发明概念的一些实施例的一种制作半导体装置的方法的中间步骤图。
参照图1,提供基底200。
基底200可包括硅基底、砷化锗基底、硅锗基底、陶瓷基底、石英基底、用于显示器的玻璃基底等。以下,将基底200示例性地解释为硅基底。
参照图2,在基底200内部形成多个沟槽T。
可利用蚀刻工艺来形成每一沟槽T。举例来说,可利用干式蚀刻工艺来形成每一沟槽T。具体来说,可在基底200上形成掩模图案。掩模图案可暴露出其中形成有每一沟槽T的区。掩模图案可包括氧化物层、氮化物层、氮氧化物层或其组合,但本公开并非仅限于此。随后,可对被掩模图案暴露出的一部分进行蚀刻以在基底200内部形成所述多个沟槽T。
参照图3,在基底200以及沟槽T中的每一者上形成绝缘层202。
绝缘层202可沿基底200的上表面以及各个沟槽T的上表面实质上共形地形成。
绝缘层202可包括氧化硅层、氮化硅层、氮氧化硅层或高介电常数材料中的至少一者。此处,高介电常数材料可包括例如HfO2、ZrO2或Ta2O5中的至少一种,但本公开并非仅限于此。
参照图4,在绝缘层202上形成金属层204。
金属层204可被形成为填充所述多个沟槽T。举例来说,可利用气相沉积工艺在绝缘层202上形成金属层204。金属层204的上表面可被形成为高于基底200的上表面。金属层204可包含例如钨,但本公开并非仅限于此。
通过气相沉积工艺形成的金属层204可根据晶体粒子尺寸来形成拓扑结构(topology)。举例来说,如图4所示,金属层204的上表面可具有无规律的不均匀度。
参照图5,利用化学机械抛光工艺P将金属层204的上表面平坦化。
化学机械抛光工艺P使用根据本发明概念的一些实施例的用于抛光金属层的浆料组合物。举例来说,化学机械抛光工艺P可使用含有第一抛光调节剂的用于抛光金属层的浆料组合物,所述第一抛光调节剂包含选自由含有金属氧化物的抛光颗粒、含有过氧化氢的氧化剂、磷酸酯(phosphate)、亚磷酸酯(phosphite)、次磷酸酯(hypophosphite)及偏磷酸酯(metaphosphate)组成的群组的至少一者。
因此,由于化学机械抛光工艺P可确保高抛光速率,因此半导体装置的制作工艺的生产率可得到提高。另外,由于化学机械抛光工艺P具有低的静态蚀刻速率,因此金属层204的拓扑结构可得到改善,且金属层204的表面粗糙度可最小化。
参照图5及图6,对金属层204进行蚀刻以形成金属层图案204b。
具体来说,可通过将金属层204蚀刻成使得金属层204的上表面低于基底200的上表面来形成金属层图案204b。因此,金属层图案204b可填充沟槽T中的每一者的一部分。
可利用回蚀工艺来形成金属层图案204b。举例来说,可利用金属回蚀(Metal EtchBack,MEB)工艺来形成金属层图案204b,但本公开并非仅限于此。
依据制作工艺而定,填充沟槽T中的每一者的金属层图案204b可具有高度离差(height dispersion)。举例来说,填充一个沟槽T的金属层图案204b的第一高度H1可不同于填充另一沟槽T的金属层图案204b的第二高度H2。
然而,由于根据本发明概念的一些实施例的制作半导体装置的方法利用化学机械抛光工艺P,因此可使填充沟槽T中的每一者的金属层图案204b的高度离差最小化。如上所述,化学机械抛光工艺P可使金属层204的表面粗糙度最小化。因此,通过使根据图6的回蚀工艺之前的金属层204的表面粗糙度最小化,可使回蚀工艺之后的金属层图案204b的高度离差最小化。举例来说,填充一个沟槽T的金属层图案204b的第一高度H1可实质上相同于填充另一沟槽T的金属层图案204b的第二高度H2。
接下来,参照图7,可在图6的所得产物上形成第一源极/漏极区201a、第二源极/漏极区201b、覆盖层206、层间绝缘层300、直接接触件(direct contact)210、位线220、掩埋接触件230、接地焊盘(landing pad)240及电容器250以制作半导体装置。
可通过用杂质掺杂基底200的顶部来形成第一源极/漏极区201a及第二源极/漏极区201b。举例来说,当用第一导电类型(例如,P型)的杂质掺杂基底200时,可在基底200上掺杂第二导电类型(例如,N型)的杂质以形成第一源极/漏极区201a及第二源极/漏极区201b。第一源极/漏极区201a及第二源极/漏极区201b可在基底200中形成在沟槽T的两侧上。
覆盖层206可形成在金属层图案204b上。具体来说,覆盖层206可形成在金属层图案204b的上表面及绝缘层202的侧壁上。此时,覆盖层206可被形成为填充沟槽T。此外,覆盖层206的上表面可设置在与基底200的上表面实质上相同的平面上。覆盖层206可包括例如氧化物层、氮化物层、氮氧化物层或其组合。
层间绝缘层300可形成在基底200上。层间绝缘层300可为单个层,但也可包括多个层。举例来说,如图所示,层间绝缘层300可包括依序层压的第一层间绝缘层302、第二层间绝缘层304及第三层间绝缘层306。层间绝缘层300可包含例如氧化硅、氮化硅、氮氧化硅或其组合。
直接接触件210可掩埋在层间绝缘层300中,且可连接到第一源极/漏极区201a。举例来说,如图所示,直接接触件210可通过第一层间绝缘层302及第二层间绝缘层304连接到第一源极/漏极区201a。直接接触件210含有导电材料,且可电连接到第一源极/漏极区201a。
位线220可形成在直接接触件210上。位线220可包含导电材料且可电连接到直接接触件210。因此,位线220可电连接到第二源极/漏极区201a。
掩埋接触件230掩埋在层间绝缘层300中,且可连接到第一源极/漏极区201b。举例来说,如图所示,掩埋接触件230可通过第一层间绝缘层302及第二层间绝缘层304连接到第二源极/漏极区201b。
掩埋接触件230可包含导电材料且可电连接到第二源极/漏极区201b。举例来说,掩埋接触件230可包含掺杂有杂质的多晶硅。此外,举例来说,掩埋接触件230可包含金属、金属硅化物、金属氮化物或其组合。
接地焊盘240形成在掩埋接触件230上且可连接到掩埋接触件230。举例来说,如图所示,接地焊盘240可形成在第二层间绝缘层304上且可连接到掩埋接触件230。
此外,接地焊盘240可包含导电材料且可电连接到掩埋接触件230。举例来说,接地焊盘240可包含钨,但本公开并非仅限于此。
电容器250形成在接地焊盘240上且可连接到接地焊盘240。举例来说,如图所示,电容器250形成在第三层间绝缘层306上且可连接到接地焊盘240。因此,电容器250可电连接到第二源极/漏极区201b。
电容器250可将电荷存储在半导体存储器元件或类似元件中。具体来说,电容器250可包括下部电极252、电容器介电层254及上部电极256。电容器250可利用下部电极252与上部电极256之间产生的电势差将电荷存储在电容器介电层254中。
下部电极252及上部电极256可包含例如经掺杂多晶硅、金属或金属氮化物。此外,电容器介电层254可包含例如氧化硅或高介电常数材料。然而,本公开并非仅限于此。
当金属层图案204b具有高度离差时,所制作的半导体装置的电特性可能会降低。举例来说,当第一高度H1不同于第二高度H2时,在所制作的半导体装置中可能会发生栅极致漏极泄漏(gate induced drain leakage,GIDL)。
然而,由于根据本发明概念的一些实施例的制作半导体装置的方法利用化学机械抛光工艺P,因此可使填充沟槽T中的每一者的金属层图案204b的高度离差最小化。举例来说,第一高度H1可实质上相同于第二高度H2。因此,根据本发明概念的一些实施例的制作半导体装置的方法可改善半导体装置的电特性。
尽管已参照本发明概念的示例性实施例特别示出并阐述了本发明概念,然而所属领域中的普通技术人员应理解,在不背离由以上权利要求书所界定的本发明概念的精神及范围的条件下,在本文中可作出各种形式及细节上的变化。所述示例性实施例应被视为仅具有说明性意义而非用于限制。
Claims (20)
1.一种用于抛光金属层的浆料组合物,其特征在于,所述浆料组合物包括:
抛光颗粒,包含金属氧化物;
氧化剂,包含过氧化氢;以及
第一抛光调节剂,包含选自由磷酸酯、亚磷酸酯、次磷酸酯、偏磷酸酯及其盐组成的群组的至少一者,
其中以100重量%的用于抛光所述金属层的所述浆料组合物计,所述氧化剂的含量是0.01重量%到0.09重量%。
2.根据权利要求1所述的用于抛光金属层的浆料组合物,其特征在于,所述金属氧化物包括选自由二氧化硅、二氧化铈、氧化锆、氧化铝、二氧化钛、钛酸钡、氧化锗、氧化锰及氧化镁组成的群组的至少一者。
3.根据权利要求1所述的用于抛光金属层的浆料组合物,其特征在于,以100重量%的用于抛光所述金属层的所述浆料组合物计,所述抛光颗粒的含量是1重量%到6重量%。
4.根据权利要求1所述的用于抛光金属层的浆料组合物,其特征在于,以100重量%的用于抛光所述金属层的所述浆料组合物计,所述氧化剂的含量是0.03重量%到0.07重量%。
5.根据权利要求1所述的用于抛光金属层的浆料组合物,其特征在于,所述第一抛光调节剂包含选自由以下组成的群组的至少一者:磷酸钾、磷酸一氢钾、磷酸二氢钾、磷酸铵、磷酸一铵、磷酸氢二铵、磷酸铝、磷酸钠、磷酸氢二钠、氨甲酰磷酸、磷酸钙、磷酸三烯丙酯、磷酸钒、磷酸镁、次磷酸铝、次磷酸钒、次磷酸锰、次磷酸锌、次磷酸镍、次磷酸钴、次磷酸铵、次磷酸钾、磷酸锰、磷酸铅、磷酸镍、磷酸钴、三偏磷酸钠、五偏磷酸钠、六偏磷酸钠、聚偏磷酸钠、次磷酸钠、三偏磷酸铵、五偏磷酸铵、六偏磷酸铵、聚偏磷酸铵、三偏磷酸钾、六偏磷酸钾、聚偏磷酸钾及次磷酸钙。
6.根据权利要求1所述的用于抛光金属层的浆料组合物,其特征在于,以100重量%的用于抛光所述金属层的所述浆料组合物计,所述第一抛光调节剂的含量是1重量%到6重量%。
7.根据权利要求6所述的用于抛光金属层的浆料组合物,其特征在于,以100重量%的用于抛光所述金属层的所述浆料组合物计,所述第一抛光调节剂的所述含量是1.5重量%到5重量%。
8.根据权利要求1所述的用于抛光金属层的浆料组合物,其特征在于,还包括:
第二抛光调节剂,包含过硫酸盐。
9.根据权利要求8所述的用于抛光金属层的浆料组合物,其特征在于,所述第二抛光调节剂包含选自由以下组成的群组的至少一者:过硫酸铵、过硫酸钠、过硫酸钾、过硫酸铁(II)、过硫酸铅(II)、过硫酸铁(III)、过硫酸锡(IV)、过硫酸铅(IV)、过硫酸镍(II)、过硫酸锡(II)、过硫酸锑(III)、过硫酸铜(I)、过硫酸铜(II)、过硫酸铝、过硫酸银、过硫酸锰、过硫酸钙、过硫酸锌、过硫酸钡、过硫酸铬(II)、过硫酸锂、单过硫酸钾、单过硫酸钠及过硫酸。
10.根据权利要求8所述的用于抛光金属层的浆料组合物,其特征在于,以100重量%的用于抛光所述金属层的所述浆料组合物计,所述第二抛光调节剂的含量是1重量%到5重量%。
11.根据权利要求1所述的用于抛光金属层的浆料组合物,其特征在于,还包括:
第三抛光调节剂,包含铁(III)化合物。
12.根据权利要求11所述的用于抛光金属层的浆料组合物,其特征在于,所述第三抛光调节剂包含选自由以下组成的群组的至少一者:蔗糖铁、氧化铁(III)、乙酸铁(III)、硫酸铁(III)、氧化锂铁(III)、磷酸铁(III)、焦磷酸铁(III)、铁(III)离子载体IV、六氰基铁(II)酸铵铁(III)、亚铁氰化铁(III)、异丙氧化铁(III)、氧代乙酸高氯酸铁(III)、柠檬酸铵铁(III)、二碳酸铁(III)、乙酰丙酮铁(III)、溴化铁(III)、氯化铁(III)、砷化铁(III)、草酸铁(III)、草酸铵铁(III)、氟化铁(III)、碘化铁(III)、硝酸铁(III)、氯化酞菁铁(III)、高氯酸铁(III)、硫酸铁(III)、硫酸铵铁(III)及酒石酸铁(III)。
13.根据权利要求11所述的用于抛光金属层的浆料组合物,其特征在于,以100重量%的用于抛光所述金属层的所述浆料组合物计,所述第三抛光调节剂的含量是1重量%到5重量%。
14.一种用于抛光金属层的浆料组合物,其特征在于,所述浆料组合物包含:
抛光颗粒;
氧化剂;以及
抛光调节剂,
其中所述抛光调节剂包含
以100重量%的用于抛光所述金属层的所述浆料组合物计,
1重量%到6重量%的第一抛光调节剂,含有选自由磷酸酯、亚磷酸酯、次磷酸酯、偏磷酸酯及其盐组成的群组的至少一者,
1重量%到5重量%的第二抛光调节剂,含有过硫酸盐,以及
1重量%到3重量%的第三抛光调节剂,含有铁(III)化合物。
15.根据权利要求14所述的用于抛光金属层的浆料组合物,其特征在于,所述氧化剂与所述第一抛光调节剂反应以生成过氧酸。
16.根据权利要求14所述的用于抛光金属层的浆料组合物,其特征在于,所述氧化剂包含过氧化氢。
17.一种制作半导体装置的方法,其特征在于,所述方法包括:
在基底中形成沟槽;
形成填充所述沟槽的金属层;以及
使用用于抛光所述金属层的浆料组合物将所述金属层的上表面平坦化,
其中用于抛光所述金属层的所述浆料组合物包括:
抛光颗粒,包含金属氧化物;
氧化剂,包含过氧化氢;以及
第一抛光调节剂,包含选自由磷酸酯、亚磷酸酯、次磷酸酯、偏磷酸酯及其盐组成的群组的至少一者,
其中以100重量%的用于抛光所述金属层的所述浆料组合物计,所述氧化剂的含量是0.01重量%到0.09重量%。
18.根据权利要求17所述的方法,其特征在于,所述金属层包含钨。
19.根据权利要求17所述的方法,其特征在于,还包括:
在将所述金属层的所述上表面平坦化之后,对所述金属层执行回蚀工艺。
20.根据权利要求17所述的方法,其特征在于,以100重量%的用于抛光所述金属层的所述浆料组合物计,所述第一抛光调节剂的含量是1重量%到6重量%。
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KR20180135279A (ko) | 2018-12-20 |
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KR102422952B1 (ko) | 2022-07-19 |
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