CN108962919A - 阵列基板及其制作方法、显示面板 - Google Patents

阵列基板及其制作方法、显示面板 Download PDF

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CN108962919A
CN108962919A CN201810659928.9A CN201810659928A CN108962919A CN 108962919 A CN108962919 A CN 108962919A CN 201810659928 A CN201810659928 A CN 201810659928A CN 108962919 A CN108962919 A CN 108962919A
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layer
substrate
metal layer
photoresist
array substrate
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夏慧
谭志威
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to CN201810659928.9A priority Critical patent/CN108962919A/zh
Priority to PCT/CN2018/103290 priority patent/WO2020000630A1/zh
Priority to US16/304,342 priority patent/US20210233942A1/en
Publication of CN108962919A publication Critical patent/CN108962919A/zh
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Abstract

本发明提出了一种阵列基板及其制作方法、显示面板，本发明首先在衬底基板上形成栅极层、栅绝缘层、有源层，在所述有源层上形成经图案化的第一光阻层，并在第一光阻层上依次形成欧姆接触层和第二金属层；通过剥离工艺，将所述第一光阻层以及第一光阻层上的欧姆接触层和第二金属层同时剥离，使得所述欧姆接触层和第二金属层通过一道光罩工艺形成预定图案，避免了对所述欧姆接触层进行非常复杂的蚀刻工艺，简化了该薄膜晶体管的制程工艺，节省了制程成本。

Description

阵列基板及其制作方法、显示面板
技术领域
本发明涉及显示面板制造领域，尤其涉及一种阵列基板及其制作方法、显示面板。
背景技术
LCD(Liquid crystal displays，液晶显示器)是一种被广泛应用的平板显示器，主要是通过液晶开关调制背光源光场强度来实现画面显示。LCD显示装置中包括TFT(ThinFilm Transistor，薄膜晶体管)器件，而TFT-LCD即薄膜场效应晶体管液晶显示器，此类显示器上的每一液晶象素点都是由集成在其后的薄膜晶体管来驱动，因而具有高反应速度、高亮度、高对比度、体积小、功耗低、无辐射等特点，在当前的显示器市场中占据主导地位。
在现有技术中，而碳纳米管作为一维纳米材料，重量轻，六边形结构连接完美，由于碳纳米管的结构与石墨的片层结构相同，所以具有很好的电学性能.近些年随着碳纳米管及纳米材料研究的深入其广阔的应用前景也不断地展现出来。在现有的显示面板制造领域中，常以随机网络型碳纳米管薄膜作为阵列基板中的有源层。
另外，由于以碳纳米管薄膜作为有源层的n型碳纳米管薄膜晶体管，通常具有较高的Ioff电流，可参照目前a-Si器件的n+层，在源漏电极与碳纳米管薄膜有源层中间也添加一层高电子浓度的半导体材料，该层被称为欧姆接触层或掺杂层，如电子掺杂后的碳纳米管来降低空穴电流达到Ioff降低，该欧姆接触层或掺杂层起到开关左右。但由于n型碳纳米管有源层较薄(由于碳纳米管材料纯度的特点，如过厚则容易失去半导体特性)，无法像非晶硅薄膜晶体管器件那样通过蚀刻工艺，将有源层上的欧姆接触层蚀刻掉，使得欧姆接触层图形化。故开发一种简单、低成本的适用于有欧姆接触层材料的n型碳纳米管TFT制备方法，具有重要意义。
发明内容
本发明提供了一种阵列基板及其制作方法、显示面板，以简化现有技术中阵列基板制程工艺，降低成本。
为达到上述目的，本发明提供的技术方案如下：
本发明提出了一种阵列基板的制作方法，其中，包括步骤：
S10、提供一基板，在所述基板上形成第一金属层，通过图案化制程在所述基板上形成所述阵列基板的栅极；
S20、在所述栅极上形成栅绝缘层；
S30、在所述栅绝缘层上形成有源层；
S40、在所述有源层上形成预定图形的第一光阻层；
S50、在所述第一光阻层上依次形成欧姆接触层、第二金属层；
S60、剥离所述第一光阻层；
S70、在所述第二金属层上形成一钝化层。
根据本发明一优选实施例，所述步骤S10包括：
S101、提供一所述基板，在所述基板上形成第一金属层；
S102、在所述第一金属层上形成第二光阻层；
S103、对所述第二光阻层进行曝光、显影；
S104、对所述第一金属层进行第一蚀刻工艺，使所述第一金属层形成所述阵列基板的所述栅极；
S105、剥离所述第二光阻层。
根据本发明一优选实施例，所述步骤S30包括：
S301、在所述栅绝缘层上形成一所述有源层；
S302、在所述有源层上形成第三光阻层；
S303、对所述第三光阻层进行曝光、显影，
S304、对所述有源层进行第二蚀刻工艺，使所述有源层形成预定图案；
步骤S304、剥离所述第三光阻层。
根据本发明一优选实施例，所述有源层利用印刷法制成。
根据本发明一优选实施例，所述有源层的材料为纳米管。
根据本发明一优选实施例，所述欧姆接触层由包含有电子掺杂的碳纳米管的溶液制成。
根据本发明一优选实施例，所述碳纳米管为单壁碳纳米管、双壁碳纳米管或碳纳米管管束。
根据本发明一优选实施例，所述第二金属层形成所述阵列基板的源漏极。
本发明还提出了一种阵列基板，其中，所述阵列基板采用上述阵列基板的制作方法制备而成。
本发明还提出了一种显示面板，其中，所述显示面板包括上述阵列基板。
本发明的有益效果为：相比于现有技术，本发明通过在有源层上形成预定图案的第一光阻层，并在所述第一光阻层上依次形成欧姆接触层和第二金属层，通过剥离工艺，将第一光阻层以及第一光阻层上的无用的欧姆接触层和第二金属层同时剥离，使得所述欧姆接触层和第二金属层通过一道光罩工艺形成预定图案，简化了简化了制程工艺，节省了制程成本。
附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明优选实施例中一种阵列基板的制作方法步骤流程图；
图2A～2J本发明优选实施例中一种阵列基板的制作方法工艺流程图。
具体实施方式
以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。
图1所示为本发明优选实施例一种阵列基板制作方法的步骤流程图，其中，所述制作方法包括步骤：
S10、提供一衬底基板，在所述衬底基板上形成第一金属层，通过图案化制程在所述衬底基板上形成所述阵列基板的栅极；
首先，提供一衬底基板101，所述衬底基板101的原材料可以为玻璃基板、石英基板、树脂基板等中的一种；
如图2A所示，在所述衬底基板101上形成第一金属层102；所述第一金属层102的金属材料通常可以采用钼、铝、铝镍合金、钼钨合金、铬、或铜等金属，也可以使用上述几种金属材料的组合物；
其次，对所述第一金属层102使用第一光罩制程工艺，在所述第一金属层102上涂布第二光阻层(未画出)，采用掩模板(未画出)曝光，经显影以及第一蚀刻的构图工艺处理后，使所述第一金属层102形成如图2B所示的栅极109，并剥离所述第二光阻层；
另外，阵列基板的栅极也可以采用由其他可制成墨水的导电材料经印刷而制成。
S20、在所述栅极上形成栅绝缘层；
如图2C所示，所述栅绝缘层103将所述栅极109和所述衬底基板101覆盖，所述栅绝缘层103主要用于将所述栅极与其他金属层隔离；优选的，所述栅绝缘层103的材料通常为氮化硅，也可以使用氧化硅和氮氧化硅等，所述栅绝缘层103的厚度为不小于2000埃米。
S30、在所述栅绝缘层上形成有源层；
如图2E所示，本步骤可以采用印刷法在所述栅绝缘层103上制备一经图案化后的有源层104，所述有源层104为由碳纳米管材料制成；
可以理解的，有源层104还可以通过更为常规的图案化制程获得，首先在所述栅绝缘层103上涂覆如图2D所示的一层有源层104，对所述有源层104使用第二光罩制程工艺，在所述有源层104上涂布第三光阻层(图中未示出)，采用掩模板(图中未示出)曝光，然后经过显影、蚀刻和光阻剥离，获得具有如图2E所示形状的有源层104；其中，有源层104的蚀刻可选用干法蚀刻，主要利用等离子对所述栅绝缘层103进行刻蚀工艺，所述等离子体为四氟化氮、六氟化硫、氧气等气体中的一种或者一种以上的混合体。
S40、在所述有源层上形成预定图形的第一光阻层；
本步骤首先在所述有源层104上形成第一光阻层，所述第一光阻层将所述有源层104和所述栅绝缘层103覆盖，并采用掩模板(图中未示出)曝光，然后经过显影，获得如图2F所示的图案的第一光阻层105。
S50、在所述第一光阻层上依次形成欧姆接触层、第二金属层；
如图2G所示，在所述第一光阻层105上形成欧姆接触层106，所述欧姆接触层106采用包含有电子掺杂n+的碳纳米管的溶液制成，所述欧姆接触层106将所述第一光阻层105以及有源层104覆盖；所述欧姆接触层106也可叫做掺杂层，因为有源层104是弱n型半导体材料材料构成，而此种材料直接与金属薄膜接触将产生肖特基势垒而劣化阵列基板器件的电学特性，使得显示面板的发光产生异常；因此，在有源层104与即将沉积的所述第二金属层107之间预先沉积一欧姆接触层106，阻止所述第二金属层107与所述有源层104直接接触；
另外，在本实施例中，所述有源层104和所述欧姆接触层106的材料中所使用的碳纳米管可以为单壁碳纳米管、双壁碳纳米管或碳纳米管管束，将其分散到适当的有机溶剂中即可用于本优选实施例；
如图2H所示，在所述衬底基板101上形成所述第二金属层107，所述第一金属层102和所述第二金属层107可以采用溅射或物理沉积的方法形成，在本实施例中，所述第二金属层107的材料与所述第一金属层102的材料可以相同或不同，金属材料通常可以采用钼、铝、铝镍合金、钼钨合金、铬、或铜等金属，也可以使用上述几种金属材料的组合物。
S60、剥离所述第一光阻层；
本步骤主要利用剥离工艺将所述衬底基板101上的第一光阻层105剥离，而在剥离所述第一光阻层105时，将位于所述第一光阻层105上的所述欧姆接触层106和所述第二金属层107一起剥离，获得如图2I所示形状的欧姆接触层106和第二金属层107；其中，所述第二金属层107形成所述阵列基板的源漏极，在本实施例中，该剥离方式可以采用光阻剥离液进行剥离工艺。
S70、在所述第二金属层上形成一钝化层。
如图2J所示，在所述第二金属层107上形成一钝化层108，所述钝化层108将所述栅绝缘层103、有源层104以及第二金属层107覆盖；优选的，所述钝化层108材料通常为氮化矽化合物。
本发明还提出了一种阵列基板，其中，所述阵列基板采用上述阵列基板的制作方法制备而成。
本发明还提出了一种显示面板，其中，所述显示面板包括上述阵列基板。
本发明提出了一种阵列基板及其制作方法、显示面板，本发明首先在衬底基板上形成栅极层、栅绝缘层、有源层，在所述有源层上形成经图案化的第一光阻层，并在第一光阻层上依次形成欧姆接触层和第二金属层；通过剥离工艺，将所述第一光阻层以及第一光阻层上的欧姆接触层和第二金属层同时剥离，使得所述欧姆接触层和第二金属层通过一道光罩工艺形成预定图案，避免了对所述欧姆接触层进行非常复杂的蚀刻工艺，简化了该阵列基板的制程工艺，节省了制程成本。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (10)

1.一种阵列基板的制作方法，其特征在于，包括步骤：
S10、提供一基板，在所述基板上形成第一金属层，通过图案化制程在所述基板上形成所述阵列基板的栅极；
S20、在所述栅极上形成栅绝缘层；
S30、在所述栅绝缘层上形成有源层；
S40、在所述有源层上形成预定图形的第一光阻层；
S50、在所述第一光阻层上依次形成欧姆接触层、第二金属层；
S60、剥离所述第一光阻层；
S70、在所述第二金属层上形成一钝化层。
2.根据权利要求1所述的制作方法，其特征在于，所述步骤S10包括：
S101、提供一所述基板，在所述基板上形成第一金属层；
S102、在所述第一金属层上形成第二光阻层；
S103、对所述第二光阻层进行曝光、显影；
S104、对所述第一金属层进行第一蚀刻工艺，使所述第一金属层形成所述阵列基板的所述栅极；
S105、剥离所述第二光阻层。
3.根据权利要求1所述的制作方法，其特征在于，所述步骤S30包括：
S301、在所述栅绝缘层上形成一所述有源层；
S302、在所述有源层上形成第三光阻层；
S303、对所述第三光阻层进行曝光、显影，
S304、对所述有源层进行第二蚀刻工艺，使所述有源层形成预定图案；
步骤S304、剥离所述第三光阻层。
4.根据权利要求1所述的制作方法，其特征在于，所述有源层利用印刷法制成。
5.根据权利要求1所述的制作方法，其特征在于，所述有源层的材料为碳纳米管。
6.根据权利要求1所述的制作方法，其特征在于，所述欧姆接触层由包含有电子掺杂的碳纳米管的溶液制成。
7.根据权利要求5或6所述的制作方法，其特征在于，所述碳纳米管为单壁碳纳米管、双壁碳纳米管或碳纳米管管束。
8.根据权利要求1所述的制作方法，其特征在于，所述第二金属层形成所述阵列基板的源漏极。
9.一种阵列基板，其特征在于，所述阵列基板采用权利要求1至8中任一项所述的阵列基板的制作方法制备而成。
10.一种显示面板，其特征在于，包括权利要求9所述的阵列基板。
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