CN107665926A - 一种阵列基板及其制备方法、显示装置 - Google Patents
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- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 229910052982 molybdenum disulfide Inorganic materials 0.000 claims abstract description 33
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 claims abstract description 26
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 17
- 239000011733 molybdenum Substances 0.000 claims abstract description 17
- 239000010409 thin film Substances 0.000 claims description 23
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- 238000009413 insulation Methods 0.000 claims description 12
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 claims description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910000029 sodium carbonate Inorganic materials 0.000 claims description 3
- 229910052979 sodium sulfide Inorganic materials 0.000 claims description 3
- GRVFOGOEDUUMBP-UHFFFAOYSA-N sodium sulfide (anhydrous) Chemical compound [Na+].[Na+].[S-2] GRVFOGOEDUUMBP-UHFFFAOYSA-N 0.000 claims description 3
- 229910021529 ammonia Inorganic materials 0.000 claims description 2
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- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- DTSBBUTWIOVIBV-UHFFFAOYSA-N molybdenum niobium Chemical compound [Nb].[Mo] DTSBBUTWIOVIBV-UHFFFAOYSA-N 0.000 description 1
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- 229910052725 zinc Inorganic materials 0.000 description 1
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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Abstract
本发明提供一种阵列基板及其制备方法、显示装置，属于显示技术领域，其可解决现有的阵列基板制备工艺繁琐，多道制程均会降低显示面板的光透过率的问题。本发明的阵列基板的制备方法中，以二硫化钼作为半导体材料形成有源层，同时以二硫化钼作为第一电极层的材料，通过将第一电极层的二硫化钼还原为钼金属的方式，形成金属的第一电极，并且还原得到的钼金属电极具有良好的透过率。此外，本发明的有源层可以与第一电极层同步形成，相当于减少一层ITO透明电极，减少溅射ITO材料的费用，增加了有源层的利用率。本发明的阵列基板适用于各种显示装置。
Description
技术领域
本发明属于显示技术领域，具体涉及一种阵列基板及其制备方法、显示装置。
背景技术
平板显示装置具有机身薄、省电、无辐射等众多优点，得到了广泛的应用。现有的平板显示装置主要包括：液晶显示装置(Liquid Crystal Display，LCD)及有机电致发光显示装置(Organic Light Emitting Display，OLED)。薄膜晶体管(Thin Film Transistor，TFT)是平板显示装置的重要组成部分，可形成在玻璃基板或塑料基板上，通常作为开关装置或驱动装置用在LCD、OLED中。
薄膜晶体管通常包括形成于衬底基板上的栅极、栅绝缘层、有源层、源极和漏极等。
发明人发现现有技术中制备薄膜晶体管的上述结构一般需要9-14道制程，不仅使得制造成本居高不下，而且每一道制程均会降低显示面板的光透过率。
发明内容
本发明针对现有的阵列基板制备工艺繁琐，多道制程均会降低显示面板的光透过率的问题，提供一种阵列基板及其制备方法、显示装置。
解决本发明技术问题所采用的技术方案是：
一种阵列基板，包括薄膜晶体管和第一电极，所述薄膜晶体管包括有源层，所述有源层由二硫化钼构成，所述第一电极由钼构成。
优选的是，所述有源层和第一电极的厚度均为3埃-100埃；所述第一电极包括板状电极。
优选的是，所述第一电极为像素电极。
优选的是，所述薄膜晶体管还包括栅极，位于所述栅极上的栅绝缘层，所述有源层位于所述栅绝缘层上；所述有源层上设有源极和漏极，所述第一电极与漏极电连接。
本发明还提供一种阵列基板的制备方法，包括以下步骤：
采用二硫化钼形成薄膜晶体管的有源层和第一电极层；
将第一电极层的二硫化钼还原为钼以形成第一电极。
优选的是，所述将第一电极层的二硫化钼还原为钼以形成第一电极包括采用氢气或氨气在400℃-450℃的条件下进行还原。
优选的是，所述还原方程式为：
MoS2+H2→Mo+H2S，
或者
MoS2+H2+Na2CO3→Mo+H2O+Na2S。
优选的是，在形成薄膜晶体管的有源层和第一电极层之前还包括：
形成栅极和栅绝缘层的步骤。
优选的是，在形成第一电极后还包括：
形成源极和漏极的步骤，其中，所述第一电极与漏极电连接。
本发明还提供一种显示面板，包括上述的阵列基板。
本发明还提供一种显示装置，包括上述的阵列基板。
本发明的阵列基板的制备方法中，以二硫化钼作为半导体材料形成有源层，同时以二硫化钼作为第一电极层的材料，通过将第一电极层的二硫化钼还原为钼金属的方式，形成金属的第一电极，并且还原得到的钼金属电极具有良好的透过率。此外，本发明的有源层可以与第一电极层同步形成，相当于减少一层ITO透明电极，减少溅射ITO材料的费用，增加了有源层的利用率。本发明的阵列基板适用于各种显示装置。
附图说明
图1为本发明的实施例1的阵列基板的制备方法流程示意图；
图2为本发明的实施例2的阵列基板的制备方法流程示意图；
图3、图4为本发明的实施例4的阵列基板的结构示意图；
其中，附图标记为：1、栅极；2、栅绝缘层；3、有源层；4、源极；5、漏极；61、第一电极层；62、第一电极；7、公共电极、8、钝化层。
具体实施方式
为使本领域技术人员更好地理解本发明的技术方案，下面结合附图和具体实施方式对本发明作进一步详细描述。
实施例1：
本实施例提供一种阵列基板的制备方法，如图1所述，包括以下步骤：
采用二硫化钼形成薄膜晶体管的有源层3和第一电极层61；
将第一电极层61的二硫化钼还原为钼，以形成第一电极62。
本实施例的方法是以MoS2作为半导体材料形成有源层3，同时以MoS2作为第一电极层61的材料，通过将第一电极层61的MoS2还原为Mo的方式，形成金属的第一电极62，并且还原得到的Mo金属电极具有良好的透过率。此外，本实施例中的有源层3可以与第一电极层61同步形成，相当于减少一层ITO电极，减少溅射ITO材料的费用，增加了有源层3的利用率。
实施例2：
本实施例提供一种阵列基板的制备方法，如图2所示，包括以下步骤：
S01、采用一次构图工艺在衬底上形成包括栅极1的图形。
具体的，在该步骤中，初始清洗→栅极膜层沉积(例如，Cu：铜)→光刻胶涂覆→栅极膜层图形曝光、显影、后烘→栅极膜层图形刻蚀→光刻胶剥离。
S02、采用一次构图工艺形成包括栅绝缘层2的图形。
具体的，在该步骤中，成膜前清洗→栅绝缘层2沉积(SixNy或SixOy：氮化硅或氧化硅)。
S03a、采用二硫化钼形成薄膜晶体管的有源层3和第一电极层61；
具体的，在该步骤中，通过溅射、蒸镀或气相沉积的方式形成一层厚度为3埃-100埃的MoS2膜。
然后，通过半色调掩膜工艺先将有源层3及第一电极62外的部分刻蚀完成，然后进行灰化工艺，将第一电极62区域的MoS2表面光刻胶灰化去除，保留有源层3区域MoS2层。
S03b、将第一电极层61的二硫化钼还原为钼以形成第一电极62，本实施例中第一电极62作为像素电极。
具体的，在该步骤中，通过H2或NH3等带有还原性的物质对第一电极62区域进行处理，将第一电极62区域的MoS2还原为Mo。
优选的是，所述将第一电极层61的二硫化钼还原为钼以形成第一电极62包括采用氢气在400℃-450℃的条件下进行还原。
作为本实施例中的一种可选实施方案，所述还原方程式为：
MoS2+H2→Mo+H2S，其中，该反应过程中，温度需要高于450℃，若还原温度低于450℃，则会造成Mo无法完全析出，导致第一电极62电导率偏低。
作为本实施例中的一种可选实施方案，所述还原方程式为：MoS2+H2+Na2CO3→Mo+H2O+Na2S。其中，该反应过程中，温度需要高于400℃，若还原温度低于400℃，则会造成Mo无法完全析出，导致第一电极62电导率偏低。
S04、形成源极4和漏极5的步骤，其中，所述第一电极62与漏极5电连接。
在该步骤中，源漏极膜层沉积(Cu：铜)→光刻胶涂覆→源漏极膜层图形曝光显影、后烘→源漏极膜层刻蚀→光刻胶剥离。
S05、采用一次构图工艺形成包括钝化层8及其电极接触过孔的图形。
在该步骤中，钝化膜层沉积(SixNy或SixOy：氮化硅或氧化硅)→光刻胶涂覆→电极接触过孔图形曝光、显影、后烘→电极接触过孔刻蚀→光刻胶剥离。
S06、采用一次构图工艺形成包括公共电极7的图形。
在该步骤中，公共电极膜层沉积(ITO或IZO：氧化铟锡或氧化铟锌)→光刻胶涂覆→公共电极膜层图形曝光显影、后烘→公共电极膜层刻蚀→光刻胶剥离→退火。
本实施例中以MoS2作为半导体材料形成有源层3，同时以MoS2作为第一电极层61的材料，因此，有源层3的厚度与第一电极层61的厚度相同，通过将第一电极层61的MoS2还原为Mo，形成金属的第一电极62，由于第一电极62Mo的厚度很低，因此第一电极62的透过率很高，此外，10埃厚度Mo的电阻为127Ω，因此本实施例的方法还原得到的Mo金属电极具有良好的透过率。
实施例3：
本实施例提供一种阵列基板，包括薄膜晶体管和第一电极62，所述薄膜晶体管包括有源层3，所述有源层3由二硫化钼构成，所述第一电极62由钼构成。
本实施例的阵列基板以MoS2作为有源层3，以由MoS2还原得到的Mo作为金属的第一电极62，Mo金属电极具有良好的透过率。此外，本实施例中的有源层3可以与第一电极层61同步形成，相当于减少一层ITO电极，减少溅射ITO材料的费用，增加了有源层3的利用率。
实施例4：
本实施例提供一种阵列基板，如图3、图4所示，包括薄膜晶体管和第一电极62，所述薄膜晶体管包括有源层3，所述有源层3由二硫化钼构成，所述第一电极62由钼构成；所述薄膜晶体管还包括栅极1，位于所述栅极1上的栅绝缘层2，所述有源层3位于所述栅绝缘层2上；所述有源层3上设有源极4和漏极5，所述第一电极62与漏极5电连接。源极4和漏极5上设有钝化层8，钝化层8上设有公共电极7。
在本实施例对应的附图3中，显示了第一电极62作为像素电极，其为板状电极，公共电极7位于像素电极上方，公共电极7为狭缝状电极，本实施例的阵列基板是一种ADS(ADvanced Super Dimension Switch，高级超维场转换技术)模式的液晶显示装置中的阵列基板。其中，ADS模式为：通过同一平面内狭缝电极边缘所产生的电场以及狭缝电极层与板状电极层间产生的电场形成多维电场，使液晶盒内狭缝电极间、电极正上方所有取向液晶分子都能够产生旋转，从而提高了液晶工作效率并增大了透光效率。高级超维场转换技术可以提高LCD产品的画面品质，具有高分辨率、高透过率、低功耗、宽视角、高开口率、低色差、无挤压水波纹(push Mura)等优点。
在一个实施例中，所述有源层3和第一电极62的厚度均为3埃-100埃。
也就是说，由于第一电极62Mo的厚度很低，仅为3埃-100埃。因此第一电极62的透过率很高，即本实施例的Mo金属电极具有良好的透过率。
实施例5：
本实施例提供一种显示面板，包括上述实施例的阵列基板。
作为本实施例中的一种可选实施方案，显示面板包括阵列基板和彩膜基板，公共电极7设于彩膜基板上，板状的像素电极设于阵列基板上，阵列基板上还设有薄膜晶体管，其中，薄膜晶体管的有源层3与像素电极均由MoS2采用上述实施例的方法制成。
其中，源极4、漏极5采用金属、金属合金，如：钼、钼铌合金、铝、铝钕合金、钛或铜等导电材料形成。
公共电极7由透明导电材料构成，具体的，所述透明导电材料选自氧化铟镓锌(IGZO)、氧化铟锌(IZO)、氧化铟锡(ITO)或氧化铟镓锡(InGaSnO)等透明导电材料中的至少一种。
可以理解的是，附图所示各结构层的大小、厚度等仅为示意。在工艺实现中，各结构层在衬底上的投影面积可以相同，也可以不同。可以通过刻蚀工艺实现所需的各结构层投影面积；同时，附图所示结构也不限定各结构层的几何形状，例如可以是附图所示的矩形，还可以是梯形，或其它刻蚀所形成的形状，同样可通过刻蚀实现。
实施例6：
本实施例提供了一种显示装置，其包括上述任意一种阵列基板。所述显示装置可以为：液晶显示面板、电子纸、OLED面板、手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。
Claims (10)
1.一种阵列基板，包括薄膜晶体管和第一电极，所述薄膜晶体管包括有源层，其特征在于，所述有源层由二硫化钼构成，所述第一电极由钼构成。
2.根据权利要求1所述的阵列基板，其特征在于，所述有源层和第一电极的厚度均为3埃-100埃；所述第一电极包括板状电极。
3.根据权利要求1所述的阵列基板，其特征在于，所述第一电极为像素电极。
4.根据权利要求1所述的阵列基板，其特征在于，所述薄膜晶体管还包括栅极，位于所述栅极上的栅绝缘层，所述有源层位于所述栅绝缘层上；所述有源层上设有源极和漏极，所述第一电极与漏极电连接。
5.一种阵列基板的制备方法，其特征在于，包括以下步骤：
采用二硫化钼形成薄膜晶体管的有源层和第一电极层；
将第一电极层的二硫化钼还原为钼以形成第一电极。
6.根据权利要求5所述的阵列基板的制备方法，其特征在于，所述将第一电极层的二硫化钼还原为钼以形成第一电极包括采用氢气或氨气在400℃-450℃的条件下进行还原。
7.根据权利要求6所述的阵列基板的制备方法，其特征在于，所述还原的方程式为：
MoS2+H2→Mo+H2S，
或者
MoS2+H2+Na2CO3→Mo+H2O+Na2S。
8.根据权利要求5所述的阵列基板的制备方法，其特征在于，在形成薄膜晶体管的有源层和第一电极层之前还包括：
形成栅极和栅绝缘层的步骤。
9.根据权利要求5所述的阵列基板的制备方法，其特征在于，在形成第一电极后还包括：
形成源极和漏极的步骤，其中，所述第一电极与漏极电连接。
10.一种显示装置，其特征在于，包括权利要求1-4任一项所述的阵列基板。
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