CN108878245A - Gate-valve device and base plate processing system - Google Patents
Gate-valve device and base plate processing system Download PDFInfo
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- CN108878245A CN108878245A CN201810442611.XA CN201810442611A CN108878245A CN 108878245 A CN108878245 A CN 108878245A CN 201810442611 A CN201810442611 A CN 201810442611A CN 108878245 A CN108878245 A CN 108878245A
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- carrying
- out mouth
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- opening portion
- slot
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- 238000000034 method Methods 0.000 claims abstract description 63
- 230000008569 process Effects 0.000 claims abstract description 62
- 239000000758 substrate Substances 0.000 claims abstract description 48
- 238000005728 strengthening Methods 0.000 claims description 4
- 230000003014 reinforcing effect Effects 0.000 claims 1
- 239000007789 gas Substances 0.000 description 26
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 19
- 238000001020 plasma etching Methods 0.000 description 13
- 239000007921 spray Substances 0.000 description 8
- 230000007246 mechanism Effects 0.000 description 7
- 238000003851 corona treatment Methods 0.000 description 6
- 238000003780 insertion Methods 0.000 description 5
- 230000037431 insertion Effects 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000004380 ashing Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000000803 paradoxical effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K3/00—Gate valves or sliding valves, i.e. cut-off apparatus with closing members having a sliding movement along the seat for opening and closing
- F16K3/30—Details
- F16K3/314—Forms or constructions of slides; Attachment of the slide to the spindle
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32513—Sealing means, e.g. sealing between different parts of the vessel
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K27/00—Construction of housing; Use of materials therefor
- F16K27/04—Construction of housing; Use of materials therefor of sliding valves
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K51/00—Other details not peculiar to particular types of valves or cut-off apparatus
- F16K51/02—Other details not peculiar to particular types of valves or cut-off apparatus specially adapted for high-vacuum installations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Landscapes
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
- Valve Housings (AREA)
- Details Of Valves (AREA)
- Plasma Technology (AREA)
Abstract
The present invention provides a kind of gate-valve device and base plate processing system, it is therefore intended that inhibits the deformation of the carrying-in/carrying-out mouth of substrate.Gate-valve device is connect with the carrying-in/carrying-out mouth for implementing the substrate of side wall of the defined process container handled to substrate under reduced pressure atmosphere is formed in, including：Wall portion is formed with the opening portion being connected to carrying-in/carrying-out mouth；With wedge portion part, it is inserted into the slot positioned at the slot of upper opening portion and positioned at carrying-in/carrying-out mouth top, carrying-in/carrying-out mouth top is supported from the upper surface of the slot on carrying-in/carrying-out mouth top, wherein, above-mentioned opening portion is formed at the part on the opening portion of wall portion, the part on the carrying-in/carrying-out mouth for the side wall that above-mentioned carrying-in/carrying-out mouth top is formed at process container.
Description
Technical field
Various aspects of the invention and embodiment are related to gate-valve device and base plate processing system.
Background technique
It has been known that there is the substrates such as glass substrate to FPD (Flat Panel Display) to carry out desired plasma
The base plate processing system of processing.Base plate processing system is for example including processing module, the storage for carrying out corona treatment to substrate
The lock for carrying out the conveyor module for the conveying device of substrate moved in and moved out and being arranged between processing module and conveyor module
Valve gear etc..
Processing module, which has, carries out the process container of corona treatment, in process container to substrate under reduced pressure atmosphere
Configured with mounting substrate and the mounting table (hereinafter referred to as " pedestal ") that plays a role as lower electrode and opposite with pedestal upper
Portion's electrode.In addition, at least one party of pedestal and upper electrode is connected with high frequency electric source, the space between pedestal and upper electrode
It is applied RF power.
In processing module, the processing gas etc. in the space between pedestal and upper electrode is fed to using RF power
Gas ions and generate ion etc., substrate is implemented at desired plasma in the guidance such as generated ion to substrate
Reason, such as plasma etch process.
In addition, the side wall in process container is formed with the carrying-in/carrying-out mouth moved in and moved out for substrate.Gate-valve device
It is connect with the carrying-in/carrying-out mouth of the side wall of process container.Moreover, passing through the movement of gate-valve device when moving in and moving out in substrate
Carry out the opening and closing of carrying-in/carrying-out mouth.
For example with wall portion, which is formed with opens gate-valve device with what the carrying-in/carrying-out mouth of the substrate of processing module was connected to
Oral area.Because the size of the glass substrate of FPD is very big, carrying-in/carrying-out mouth and opening portion need precisely contraposition.Therefore,
By the slot of the part (hereinafter referred to as " upper opening portion ") on the opening portion for being formed in wall portion and it is formed in process container
The slot of part (hereinafter referred to as " carrying-in/carrying-out mouth top ") on the carrying-in/carrying-out mouth of side wall is inserted into wedge portion part, carries out gate valve dress
Set the contraposition of the carrying-in/carrying-out mouth of side opening portion and process container side.
Existing technical literature
Patent document
Patent document 1：No. 4546460 bulletins of Japanese Patent No.
Patent document 2：Japanese Unexamined Patent Publication 2009-230870 bulletin
Patent document 3：No. 3043848 bulletins of Japanese Patent No.
Patent document 4：Japanese Unexamined Patent Publication 2015-81633 bulletin
Summary of the invention
Invention technical problem to be solved
But in the contraposition of the opening portion of gate-valve device side and process container side carrying-in/carrying-out mouth, in upper opening portion
In the case where the slot insertion wedge portion part on slot and carrying-in/carrying-out mouth top, generally by adjusting being respectively formed at upper opening portion and move in
The position of the slot on mouthful top and the short transverse of wedge portion part is moved out, so that wedge portion part is placed under the slot on carrying-in/carrying-out mouth top
Surface.The carrying-in/carrying-out mouth top of the side wall of process container is by being placed in the lower surface of the slot on carrying-in/carrying-out mouth top as a result,
Wedge parts carry gate-valve device side wall upper opening portion.
But the knot of the upper opening portion in the wall portion of the carrying-in/carrying-out mouth upper support gate-valve device of the side wall of process container
In structure, under the reduced pressure atmosphere being depressurized in process container, it is applied to the corresponding pressure of atmospheric pressure, is applied to carrying-in/carrying-out mouth top
It is added on the corresponding power of self weight of gate-valve device.Therefore, carrying-in/carrying-out mouth top warpage, carrying-in/carrying-out mouth deform.It moves in
Outlet is deformed into the major reason for reducing the air-tightness in process container, not preferably.
Especially in recent years, the viewpoint based on the uniformity for improving the plasma generated in process container, exists
The interval of pedestal and upper electrode shortens in process container, and the thickness on the carrying-in/carrying-out mouth top of the side wall of process container is thinning
Trend.The thickness on the carrying-in/carrying-out mouth top of the side wall in process container is thinner, and the warpage on carrying-in/carrying-out mouth top will be got over
Greatly, therefore there are problems that the deformation of carrying-in/carrying-out mouth further increases.
For solving the technical solution of technical problem
In one embodiment, gate-valve device disclosed in this invention, the base with the side wall for being formed in process container
The carrying-in/carrying-out mouth of plate connects, and above-mentioned process container implements defined processing, above-mentioned gate valve to aforesaid substrate under reduced pressure atmosphere
Device is characterised by comprising：Wall portion is formed with the opening portion being connected to above-mentioned carrying-in/carrying-out mouth；With wedge portion part, inserted
Enter to be located at the slot of upper opening portion and the slot positioned at carrying-in/carrying-out mouth top, from the upper table of the above-mentioned slot on above-mentioned carrying-in/carrying-out mouth top
The above-mentioned carrying-in/carrying-out mouth top of surface bearing, wherein above-mentioned upper opening portion is formed on the above-mentioned opening portion of above-mentioned wall portion
Part, above-mentioned carrying-in/carrying-out mouth top are formed at the part on the above-mentioned carrying-in/carrying-out mouth of the side wall of above-mentioned process container.
The effect of invention
According to disclosed gate-valve device mode, the deformation for being able to suppress the carrying-in/carrying-out mouth of substrate can be obtained
Effect.
Detailed description of the invention
Fig. 1 is the perspective view that outlined the base plate processing system of present embodiment.
Fig. 2 is the sectional view for indicating the outline structure of plasma-etching apparatus of present embodiment.
Fig. 3 is the sectional view for indicating the structure of gate-valve device of present embodiment.
Fig. 4 is the figure for illustrating the configuration of fixation member.
Description of symbols
1 process container
1b side wall
1b1 carrying-in/carrying-out mouth
1b3 carrying-in/carrying-out mouth top
1b4 slot
1c lid
100 base plate processing systems
101 processing modules
103 conveyor modules
110 gate-valve devices
201 shells
201a wall portion
The opening portion 201b
201c upper opening portion
201d slot
201e protruding portion
251 wedge portion parts
253 fixation members.
Specific embodiment
Hereinafter, being carried out referring to embodiment of the attached drawing to gate-valve device and base plate processing system disclosed herein detailed
Explanation.In addition, marking identical appended drawing reference to part same or equivalent in each figure.
(base plate processing system)
Fig. 1 is the perspective view that outlined the base plate processing system 100 of present embodiment.Base plate processing system 100
Corona treatment such as is carried out to the glass substrate of FPD (hereinafter referred to as " substrate ") S.In addition, illustrating liquid crystal as FPD
Display (LCD), electroluminescent (Electro Luminescence：EL) display, plasma display panel (PDP) etc..
Base plate processing system 100 includes connecting into criss-cross 5 vacuum modules.Specifically, base plate processing system 100
It include 3 processing module 101a, 101b, 101c, conveyor module 103 and load locking module 105 as 5 vacuum modules.
Its inner space can be maintained defined reduced atmosphere (vacuum state) by processing module 101a, 101b, 101c.
The mounting table (illustration omitted) of mounting substrate S is respectively equipped in processing module 101a, 101b, 101c.In processing module
In 101a, 101b, 101c, substrate S is for example etched under reduced pressure atmosphere in the state that substrate S is placed in mounting table
The corona treatment of processing, ashing processing, film process etc..
Conveyor module 103 is able to maintain as processing module 101a, 101b, 101c as defined reduced atmosphere.Defeated
It send and is provided with conveying device (not shown) in module 103.Using the conveying device, in processing module 101a, 101b, 101c and add
Carry the conveying that substrate S is carried out between locking module 105.
Locking module 105 is loaded as processing module 101a, 101b, 101c and conveyor module 103, is able to maintain as rule
Fixed reduced atmosphere.Load locking module 105 it is the same between the conveyor module 103 of reduced atmosphere and the air atmosphere of outside into
The handover of row substrate S.
Base plate processing system 100 further includes 5 gate-valve devices 110a, 110b, 110c, 110d, 110e.Gate-valve device
110a, 110b, 110c are arranged respectively between conveyor module 103 and processing module 101a, 101b, 101c.Gate-valve device 110d
Configuration is between conveyor module 103 and load locking module 105.Gate-valve device 110e configuration load locking module 105 with
Gate-valve device 110d opposite side.Gate-valve device 110a~110e all has opening and closing and the wall for separating 2 adjacent spaces is arranged in
Opening portion function.
Gate-valve device 110a~110d in the off state airtightly seals each module, and makes mould in the on-state
The transport of substrate S is circulated and is able to carry out between block.Gate-valve device 110e maintains the gas of load locking module 105 in the on-state
Close property, and the transport for carrying out substrate S in locking module 105 between outside can loaded in the on-state.
Base plate processing system 100 is further provided with configuration between load locking module 105 and is clipping gate-valve device
The conveying device 125 of the position of 110e.Conveying device 125 have as substrate fixture fork 127, enable fork 127 into
Enter, the supporting part 129 that exits and rotatably support the fork 127 and the driving mechanism for driving the supporting part 131.
Base plate processing system 100 further includes boxlike index 121a, the 121b and mounting for the two sides configured in driving portion 131
Box C1, C2 on each boxlike index 121a, 121b.Boxlike index 121a, 121b, which are respectively provided with, goes up and down box C1, C2
Elevating mechanism portion 123a, 123b.So that substrate S can be vacated with a gap in the up-down direction to ground multilayer in each box C1, C2
Configuration.The fork 127 of conveying device 125 configures between box C1, C2.
Although base plate processing system 100 further includes needing in control base board processing system 100 in addition, not shown in Fig. 1
The control unit of the structural element controlled.Control unit for example with have CPU controller, user connected to the controller
Interface and storage unit connected to the controller.Controller is uniformly controlled the structural element in base plate processing system 100 needed to control.
Base plate processing system 100 is managed by process management person for user interface and the keyboard of input operation for being instructed etc., by base
Display that the working condition of plate processing system 100 is visually shown etc. is constituted.Processing scheme is preserved in storage unit,
Processing scheme record has the control that the various processing executed by base plate processing system 100 are realized for the control by controller
Program (software) and treatment conditions data etc..Moreover, as needed, by according to instruction from user interface etc. from storage unit
Recalling arbitrary processing scheme executes controller, carries out utilizing the progress of base plate processing system 100 under the control of the controller
Desired processing.
The processing scheme of above-mentioned control program and treatment conditions data etc., which is able to use, is stored in computer-readable deposit
The processing scheme of the state of storage media such as CD-ROM, hard disk, floppy disk, flash memory etc..Alternatively, can also from other devices for example through
Special circuit is transmitted at any time and is used online.
(plasma processing apparatus)
Then, the structure of processing module 101a, 101b, 101c shown in FIG. 1 are illustrated.In the present embodiment,
It is illustrated in case where processing module 101a, 101b, 101c are plasma-etching apparatus 101A, but and it is unlimited
Due to this.
Fig. 2 is the sectional view for indicating the outline structure of plasma-etching apparatus 101A of present embodiment.Plasma
Etaching device 101A is configured to the parallel flat plasma-etching apparatus to the substrate S capacitively coupled being etched.
Plasma-etching apparatus 101A has inside by having carried out the aluminium structure of anodized (alumite)
At the process container 1 for being formed as square tube shape.Process container 1 includes bottom wall 1a, 4 side wall 1b (only illustrating 2) and lid
1c.1 electrical ground of process container.It is provided in side wall 1b and is removed for the carrying-in/carrying-out mouth 1b1 for moving in and moving out of substrate S and opening and closing
Enter to move out the gate-valve device 110 of mouthful 1b1.In addition, gate-valve device 110 is gate-valve device 110a, 110b, 110c's shown in FIG. 1
Any one.
The not shown switching mechanism of lid 1c can be opened and closed to constitute relative to side wall 1b.In the state of closing lid 1c
Lid 1c and the bonding part of each side wall 1b are sealed by o-ring 3, keep the air-tightness in process container 1.
Bottom in process container 1 configures the insulating element 9 of framed shape.It is provided on insulating element 9 as can
Load the pedestal 11 of the mounting table of substrate S.It also include substrate 12 as the pedestal of lower electrode 11.Substrate 12 is for example by aluminium or not
The conductive materials such as rust steel (SUS) are formed.Substrate 12 configures on insulating element 9, is configured with O in the bonding part of two components
The seal members such as type ring 13 and be able to maintain that air-tightness.Also by o-ring etc. between insulating element 9 and the bottom wall 1a of process container 1
Seal member 14 maintains air-tightness.The side periphery of substrate 12 is surrounded by insulating element 15.Therefore ensure that the side of pedestal 11
Insulating properties prevents paradoxical discharge when corona treatment.
It is parallel with the pedestal 11 and be oppositely disposed the spray head to play a role as upper electrode in the top of pedestal 11
31.Spray head 31 is supported by the lid 1c on the top of process container 1.Spray head 31 is in hollow form, is provided with gas diffusion inside it
Space 33.In addition, being formed with multiple gases row of discharge processing gas in the lower surface (opposite face with pedestal 11) of spray head 31
Portal 35.31 electrical ground of spray head, a pair of of parallel plate electrode is constituted with pedestal 11 together.
Gas introduction port 37 is provided near the center upper portion of spray head 31.Processing gas is connected in gas introduction port 37
Supply pipe 39.In processing gas supply pipe 39, supply is connected with through 2 valves 41,41 and mass flow controller (MFC) 43 and is used
In the supply source 45 for the processing gas being etched.As processing gas, such as except halogen gas, O2It can also make other than gas
With rare gas such as Ar gas etc..
Bottom wall 1a in process container 1 is formed with the exhaust opening 51 of perforation many places (such as at 8).In each exhaust
Exhaust pipe 53 is connected separately with opening 51.Each exhaust pipe 53 has flange part 53a in its end, at flange part 53a and bottom
The state that o-ring (illustration omitted) is provided between wall 1a is fixed.APC valve and exhaust apparatus are connected in each exhaust pipe 53
57。
Plasma-etching apparatus 101A is provided with the pressure gauge 61 of the pressure in metering process container 1.Pressure gauge 61
It is connect with control unit, the metric results of the pressure in process container 1 is supplied to control unit in real time.
Supply lines 71 is connected in the substrate 12 of pedestal 11.In the supply lines 71, matched case (M.B.) 73 is connected with height
Frequency power 75.For example supply the RF power of 13.56MHz to the pedestal 11 as lower electrode from high frequency electric source 75 as a result,.Separately
Outside, power supply opening 77 as pass through openings portion of the supply lines 71 through being formed in bottom wall 1a is imported into process container 1.
Each constituting portion of plasma-etching apparatus 101A is the structure for connecting and controlling with control unit.
Then, the processing movement of the plasma-etching apparatus 101A constituted as described above is illustrated.Firstly,
Substrate S in the state that gate-valve device 110 is open as handled object by conveying device (not shown), through carrying-in/carrying-out mouth 1b1
It is moved in process container 1 from conveyor module 103, gives pedestal 11.Later, gate-valve device 110 is closed, and is arranged in process container 1
Device of air 57 vacuumizes until reaching defined value.
Then, valve 41 is open, from supply source 45 by processing gas through processing gas supply pipe 39, gas introduction port 37
Import the gas diffusion space 33 of spray head 31.At this point, carrying out the flow control of processing gas by mass flow controller 43.It is led
The processing gas for entering gas diffusion space 33 is further uniform through the substrate S of 35 pairs of multiple gas discharge holes mountings on the base 11
Ground is discharged, and the pressure in process container 1 is maintained defined value.Thus reduced pressure atmosphere is formed in process container 1.
Apply RF power from the matched case 73 of high frequency electric source 75 to pedestal 11 under reduced pressure atmosphere.As a result, as under
The pedestal 11 of portion's electrode and as generating high-frequency electric field between the spray head 31 of upper electrode, processing gas dissociation and plasma
Change.Using the plasma, etching process is implemented to substrate S.
After implementing etching process, stop the application of the RF power from high frequency electric source 75, is imported stopping gas
Later, by the pressure in process container 1 to defined pressure.Then, gate-valve device 110 is open, from pedestal 11 by base
Plate S gives conveying device (not shown), removes substrate S to conveyor module 103 from the carrying-in/carrying-out mouth 1b1 of process container 1.Pass through
The plasma etch process to a substrate S is completed in above operation.
(gate-valve device)
Then, referring to Fig. 3, the structure of the gate-valve device 110 of present embodiment is described in detail.Fig. 3 is to indicate this
The sectional view of the structure of the gate-valve device 110 of embodiment.
Gate-valve device 110 can be applied to base plate processing system 100 shown in FIG. 15 gate-valve device 110a, 110b,
Any one of 110c, 110d, 110e.Gate-valve device 110 be particularly preferably applied for setting processing module 101a, 101b,
Gate-valve device 110a, 110b, 110c between 101c and conveyor module 103.Therefore, in the following description, with gate-valve device
110 are applied to be illustrated in case where gate-valve device 110a, 110b, 110c.Gate-valve device 110 is configured in processing module
Between 101 and conveyor module 103.Processing module 101 is equivalent to any one of processing module 101a, 101b, 101c, i.e. Fig. 2
Shown in plasma-etching apparatus 101A.In addition, omitting the diagram of conveyor module 103 in Fig. 3.
As shown in figure 3, processing module 101 includes dividing the process container 1 in the space in processing module 101.As described above,
Process container 1 includes the side wall 1b adjacent with gate-valve device 110.Side wall 1b is by space in processing module 101 and adjacent thereto
The space of 110 side of gate-valve device separate.Side wall 1b be provided with can between processing module 101 and conveyor module 103 into
The carrying-in/carrying-out mouth 1b1 of the transfer of row substrate S.Side wall 1b has the face 1b2 towards gate-valve device 110.
In addition, part (hereinafter referred to as " carrying-in/carrying-out mouth ") 1b3 on the carrying-in/carrying-out mouth 1b1 of side wall 1b, forms
There is the slot 1b4 of the contraposition of the opening portion 201b and carrying-in/carrying-out mouth 1b1 for aftermentioned 110 side of gate-valve device.
Gate-valve device 110 has shell 201 of the configuration between processing module 101 and conveyor module 103.Shell 201 is in
The tubular of rectangle is formed, including bottom, top plate portion and connection bottom with top plate portion and the wall portion adjacent with process container 1
201a.Wall portion 201a in 1 side of process container of shell 201 is formed with opening portion 201b.Opening portion 201b and process container 1
The carrying-in/carrying-out mouth 1b1 of side wall 1b is connected to.On the other hand, the side mouth of 103 side of conveyor module of shell 201, with conveying mould
The inside of block 103 connects.
In addition, being provided with valve body and valve body (not shown) mobile mechanism in shell 201, valve body mobile mechanism makes valve body exist
It is moved between closed position and open position.In the case where making valve body be moved to closed position by valve body mobile mechanism,
Opening portion 201b is blocked by valve body, in the case where making valve body be moved to open position by valve body mobile mechanism, opening portion
201b is open.
In addition, part (hereinafter referred to as " upper opening portion ") 201c on the opening portion 201b of wall portion 201a, is formed with
Above-mentioned slot 201d corresponding with the slot 1b4 of carrying-in/carrying-out mouth 1b3.Wedge portion part is fixed in the slot 201d insertion of upper opening portion 201c
251.The fixation of wedge portion part 251 is for example carried out by chimeric.The wedge portion part 251 for being fixed in the slot 201d of upper opening portion 201c exists
The slot 1b4 that carrying-in/carrying-out mouth 1b3 is inserted into when the contraposition of opening portion 201b and carrying-in/carrying-out mouth 1b1 is carried out, from carrying-in/carrying-out mouth
The upper surface of the slot 1b4 of top 1b3 supports carrying-in/carrying-out mouth top 1b3.At this point, the upper surface bearing of wedge portion part 251 is moved in
Export the face of the top of the slot 1b4 of top 1b3 and the surface bearing wedge portion part 251 of the lower section of the slot 201d of upper opening portion 201c
The positional relationship of lower surface is set up.In other words, process container 1 is placed in wedge portion part by the slot 1b4 of carrying-in/carrying-out mouth top 1b3
251, further, upper opening portion 201c is placed in by wedge portion part 251 and slot 201d.
Herein, under the reduced pressure atmosphere that process container 1 is depressurized, apply to the carrying-in/carrying-out mouth top 1b3 of process container 1
In the corresponding power of atmospheric pressure.In this way, carrying-in/carrying-out mouth 1b3 is to the side carrying-in/carrying-out mouth 1b1 warpage, the result is that carrying-in/carrying-out mouth 1b1
It deforms.If the deformation of carrying-in/carrying-out mouth 1b1 is excessive, the gap of lid 1c and side wall 1b can be O-shaped more than that can utilize
The range that ring 3 is sealed, the result is that sealing is destroyed and the air-tightness decline in process container 1.
Therefore, in the present embodiment, wedge portion part 251 is abutted with the upper surface of the slot 1b4 of carrying-in/carrying-out mouth top 1b3,
Apply the side with carrying-in/carrying-out mouth top 1b3 warpage under reduced pressure atmosphere to the upper surface of the slot 1b4 of carrying-in/carrying-out mouth top 1b3
Thus power round about supports carrying-in/carrying-out mouth top 1b3.As a result, under reduced pressure atmosphere, carrying-in/carrying-out mouth top 1b3
Warpage reduce, the result is that carrying-in/carrying-out mouth 1b1 deformation be suppressed.
In addition, in the present embodiment, as described above, so that carrying-in/carrying-out mouth top 1b3 is from the upper surface of slot 1b4
The mode supported by wedge portion part 251 carries out the opening portion 201b of 110 side of gate-valve device and the carrying-in/carrying-out mouth of 1 side of process container
The contraposition of 1b1.Therefore, in the present embodiment, in order to make the contraposition be easy to carry out, preferably carrying-in/carrying-out mouth top 1b3's
Slot 1b4's works hard in shape.For example, the slot 1b4 of carrying-in/carrying-out mouth top 1b3 is formed as being inserted into wedge portion part 251 to slot 1b4
In the state of afterwards so that the lower surface of wedge portion part 251 with and wedge portion part 251 the opposite slot 1b4 in lower surface lower surface between
Generate gap.Thereby, it is possible to efficiently carry out insertion of the wedge portion part 251 to slot 1b4, therefore contraposition can be made to be easy.
In addition, existing because wedge portion part 251 supports carrying-in/carrying-out mouth top 1b3 by 251 pairs of wedge portion part openings
Portion 201c applies the power of the self weight comprising process container 1 and makes upper opening portion 201c to the possibility of the opening portion side 201b warpage
Property.Accordingly it is also possible to which the structure for reducing the warpage of upper opening portion 201c is arranged in upper opening portion 201c.
It projects to the other parts other than wall portion 201a specifically, upper opening portion 201c has (for example, shell 201
Top plate portion) high position protruding portion 201e.By the way that protruding portion 201e is arranged in upper opening portion 201c, along the height of wall portion 201a
The thickness for spending the upper opening portion 201c in direction increases.Thereby, it is possible to improve the rigidity of upper opening portion 201c, the result is that upper opening portion
The warpage of 201c is reduced.
It is general to utilize but after the contraposition for carrying out opening portion 201b and carrying-in/carrying-out mouth 1b1 using wedge portion part 251
Wall portion 201a is fixed on the side wall 1b of process container 1 by the fixation members such as screw.In this case, fixation member configuration is in wall
The part of opening portion 201b is surrounded in portion 201a.It include upper opening portion 201c in the part for surrounding opening portion 201b.As described above,
It is formed with slot 201d in upper opening portion 201c, is inserted into wedge portion part 251 in the slot 201d of upper opening portion 201c.Therefore, it is opened based on edge
The size of the wedge portion part 251 of the extending direction (i.e. the depth direction of Fig. 3) of oral area 201b, it is difficult to ensure in upper opening portion 201c
State the region of fixation member.
Therefore, in the present embodiment, it is preferable to use small-sized multiple wedge portion parts 251 ensure above-mentioned fixation member
Region.As an example, such as can also be as shown in Figure 4, upper opening portion 201c multiple slots (not shown) and remove
The multiple slots multiple wedge portion parts 251 of insertion (not shown) for entering to move out mouthful top 1b3, configure solid between adjacent wedge portion part 251
Determine component 253.
As described above, according to the present embodiment, the insertion of wedge portion part 251 for the slot 201d for being fixed on open end 201c is removed
Enter the slot 1b4 for moving out mouthful top 1b3, supports carrying-in/carrying-out mouth top from the upper surface of the slot 1b4 of carrying-in/carrying-out mouth top 1b3
1b3.Therefore, the warpage of carrying-in/carrying-out mouth top 1b3 can be reduced, the result is that be able to suppress the carrying-in/carrying-out mouth 1b1 of substrate S
Deformation.
In addition, in the above-described embodiment, in the slot 201d fixed wedge component 251 of upper opening portion 201c, but wedge portion part
251 can also be fixed on the slot 1b4 of carrying-in/carrying-out mouth top 1b3.In addition it is also possible to by wedge portion part 251 and upper opening portion 201c
Slot 201d or the slot 1b4 of carrying-in/carrying-out mouth top 1b3 be integrally formed.
In addition, in the above-described embodiment, protruding portion 201e being arranged in upper opening portion 201c and makes the height along wall portion 201a
The thickness for spending the upper opening portion 201c in direction increases, but can also be arranged reinforced cut-out top 201c's in upper opening portion 201c
Strengthening part.By the way that strengthening part is arranged in upper opening portion 201c, the warpage of upper opening portion 201c can be reduced.At this point, from suppression
From the perspective of shifting caused by heating expansion etc., more preferable strengthening part is the component of same material with upper opening portion 201c.
In addition, plasma-etching apparatus is not limited to the parallel plate-type of capacitively coupled shown in Fig. 2, such as can
It is enough to use the plasma-etching apparatus using microwave plasma and the plasma etching using inductively coupled plasma body
Device etc..In addition, the present invention is not limited to plasma-etching apparatus, such as plasma ashing can also be applied to and filled
Set, plasma CVD film formation device, plasma diffusion film formation device etc. are used for the plasma processing apparatus of other processing,
Further, additionally it is possible to applied to the substrate board treatment for carrying out the processing other than corona treatment.
Claims (7)
1. a kind of gate-valve device is connect with the carrying-in/carrying-out mouth of the substrate for the side wall for being formed in process container, the processing is held
Device implements defined processing to the substrate under reduced pressure atmosphere, and the gate-valve device is characterised by comprising：
Wall portion is formed with the opening portion being connected to the carrying-in/carrying-out mouth；With
Wedge portion part is inserted into the slot positioned at the slot of upper opening portion and positioned at carrying-in/carrying-out mouth top, from the carrying-in/carrying-out mouth
The upper surface of the slot on top supports the carrying-in/carrying-out mouth top, wherein the upper opening portion is formed at the wall portion
The opening portion on part, the carrying-in/carrying-out mouth top is formed at the described of the side wall of the process container and moves in
Move out the part on mouth.
2. gate-valve device as described in claim 1, it is characterised in that：
Wedge portion part is abutted with the upper surface of the slot on the carrying-in/carrying-out mouth top, by the carrying-in/carrying-out mouth
The upper surface of the slot in portion applies the contrary direction bent under the reduced pressure atmosphere with the carrying-in/carrying-out mouth top
Power support the carrying-in/carrying-out mouth top.
3. gate-valve device as claimed in claim 1 or 2, it is characterised in that：
Wedge portion part is fixed on the slot of the upper opening portion or the slot on the carrying-in/carrying-out mouth top.
4. gate-valve device according to any one of claims 1 to 3, it is characterised in that：
Multiple slots with the multiple slots and the carrying-in/carrying-out mouth top for being inserted into the upper opening portion it is multiple
Wedge portion part,
Between wedge portion part adjacent to each other, configured with the side wall for the wall portion to be fixed on to the process container
Fixation member.
5. gate-valve device as described in any one of claims 1 to 4, it is characterised in that：
The upper opening portion has the protruding portion for projecting to the position higher than the other parts other than the wall portion.
6. such as gate-valve device according to any one of claims 1 to 5, it is characterised in that：
Also there is the strengthening part for reinforcing the upper opening portion.
7. a kind of base plate processing system comprising：The defined process container handled is implemented to substrate under reduced pressure atmosphere；With with
It is formed in the gate-valve device of the carrying-in/carrying-out mouth connection of the substrate of the side wall of the process container, the base plate processing system
It is characterized in that：
The gate-valve device includes：
Wall portion is formed with the opening portion being connected to the carrying-in/carrying-out mouth；With
Wedge portion part is inserted into the slot positioned at the slot of upper opening portion and positioned at carrying-in/carrying-out mouth top, from the carrying-in/carrying-out mouth
The upper surface of the slot on top supports the carrying-in/carrying-out mouth top, wherein the upper opening portion is formed at the wall portion
The opening portion on part, the carrying-in/carrying-out mouth top is formed at the described of the side wall of the process container and moves in
Move out the part on mouth.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017-094612 | 2017-05-11 | ||
| JP2017094612A JP6899697B2 (en) | 2017-05-11 | 2017-05-11 | Gate valve device and board processing system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108878245A true CN108878245A (en) | 2018-11-23 |
| CN108878245B CN108878245B (en) | 2020-06-09 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810442611.XA Active CN108878245B (en) | 2017-05-11 | 2018-05-10 | Gate valve device and substrate processing system |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6899697B2 (en) |
| KR (1) | KR102100032B1 (en) |
| CN (1) | CN108878245B (en) |
| TW (1) | TWI759470B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111326385A (en) * | 2018-12-13 | 2020-06-23 | 江苏鲁汶仪器有限公司 | Vacuum chamber |
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| US20070227033A1 (en) * | 2006-03-30 | 2007-10-04 | Tokyo Electron Limited | Substrate transferring apparatus, substrate processing apparatus, and substrate processing method |
| CN102147019A (en) * | 2010-01-29 | 2011-08-10 | 东京毅力科创株式会社 | Gate valve and substrate processing apparatus using the same |
| CN104576283A (en) * | 2013-10-22 | 2015-04-29 | 东京毅力科创株式会社 | Gate valve apparatus and plasma processing apparatus |
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| JP3043848U (en) | 1997-05-28 | 1997-12-02 | 株式会社プレオ | False eyelash case |
| JP3652688B2 (en) * | 2003-02-27 | 2005-05-25 | 株式会社旭精機 | Switchgear |
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| JP5044931B2 (en) * | 2005-10-31 | 2012-10-10 | 東京エレクトロン株式会社 | Gas supply apparatus and substrate processing apparatus |
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| JP6557523B2 (en) * | 2015-06-19 | 2019-08-07 | 株式会社日立ハイテクノロジーズ | Plasma processing equipment |
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- 2017-05-11 JP JP2017094612A patent/JP6899697B2/en active Active
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2018
- 2018-04-27 TW TW107114394A patent/TWI759470B/en active
- 2018-05-03 KR KR1020180050946A patent/KR102100032B1/en active IP Right Grant
- 2018-05-10 CN CN201810442611.XA patent/CN108878245B/en active Active
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| JPH05196150A (en) * | 1991-09-30 | 1993-08-06 | Tokyo Electron Yamanashi Kk | Gate valve |
| US20070227033A1 (en) * | 2006-03-30 | 2007-10-04 | Tokyo Electron Limited | Substrate transferring apparatus, substrate processing apparatus, and substrate processing method |
| CN102147019A (en) * | 2010-01-29 | 2011-08-10 | 东京毅力科创株式会社 | Gate valve and substrate processing apparatus using the same |
| CN104576283A (en) * | 2013-10-22 | 2015-04-29 | 东京毅力科创株式会社 | Gate valve apparatus and plasma processing apparatus |
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| CN111326385A (en) * | 2018-12-13 | 2020-06-23 | 江苏鲁汶仪器有限公司 | Vacuum chamber |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI759470B (en) | 2022-04-01 |
| KR20180124730A (en) | 2018-11-21 |
| JP2018189218A (en) | 2018-11-29 |
| KR102100032B1 (en) | 2020-04-10 |
| CN108878245B (en) | 2020-06-09 |
| JP6899697B2 (en) | 2021-07-07 |
| TW201901838A (en) | 2019-01-01 |
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