CN108701701A - 光电转换装置 - Google Patents

光电转换装置 Download PDF

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CN108701701A
CN108701701A CN201780003629.3A CN201780003629A CN108701701A CN 108701701 A CN108701701 A CN 108701701A CN 201780003629 A CN201780003629 A CN 201780003629A CN 108701701 A CN108701701 A CN 108701701A
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photoelectric conversion
photodiode
contact hole
electrode
conversion device
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伊东笃
伊东一笃
金子诚二
神崎庸辅
齐藤贵翁
宫本忠芳
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Sharp Corp
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Abstract

提供一种光电转换装置，在光电转换装置中减少光电二极管的截止泄漏电流。光电转换装置(100)具备：氧化物半导体层(5)，其形成在基板(1)上；钝化膜(6)以及平坦化膜(7)，其层叠于氧化物半导体层上；光电二极管(9)，其由下部电极(91)、光电转换层(92)、上部电极(93)构成，经由钝化膜以及平坦化膜所形成的接触孔(21)，下部电极连接于漏极电极(4)，接触孔的正上方未设置有光电转换层。

Description

光电转换装置
技术领域
本发明是关于光电转换装置。
背景技术
以往，作为X线传感器或光传感器，利用光电转换装置。专利文献1揭示了光电转换装置的一例。
现有技术文献
专利文献
专利文献1：日本国公开专利公报“特开2010-67762号公报(2010年3月25日公开)”
发明内容
发明要解决的问题
图7示出现有技术所涉及的光电转换装置的一例的剖视图。如图7所示，光电转换装置110中，在作为PIN二极管的光电二极管9的正下方贯穿设有接触孔，所述接触孔用于连接氧化物半导体层5(薄膜晶体管)的源极电极4、和光电二极管9的下部电极91。具有如上所述的结构的光电转换装置中，会有光电二极管9的截止泄漏电流变大的问题。
利用图8、9说明其原因。图8示出现有技术所涉及的光电二极管的一例的放大剖视图。图9示出现有技术所涉及的光电二极管的特性例的图表。如图8所示，在下部电极91的倾斜部中，光电转换层92的膜厚与下部电极91的平坦部相比较小，另外，在光电转换层92中、容易发生n+层921的切断，进一步，在i层922中发生裂纹(裂缝)。其结果，由针对光电二极管9的反向偏置电压而引起的电流变大，如图9所示，导致光电二极管9的截止泄漏电流变大。
本发明是鉴于上述的问题而完成的，其目的在于，在光电转换装置中减少光电二极管的截止泄漏电流。
用于解决技术问题的技术方案
为了解决上述的问题，本发明的一个方面所涉及的光电转换装置具备：薄膜晶体管，其形成在基板上；第一绝缘层，其层叠于所述薄膜晶体管上；光电二极管，其在上部电极和下部电极之间设置有光电转换层，经由所述第一绝缘层所形成的第一接触孔，所述光电二极管的下部电极连接于所述薄膜晶体管的漏极电极，所述第一接触孔的正上方未设置有所述光电转换层。
有益效果
根据本发明的一个方面，起到在光电转换装置中能够减少光电二极管的截止泄漏电流的效果。
附图说明
图1示出本发明的第一实施方式所涉及的光电转换装置所利用的阵列基板构成平面图。
图2是图1的A-A’剖视图。
图3是图2的放大图。
图4是示出本发明的第一实施方式所涉及的光电二极管的特性例的图表。
图5示出本发明的第二实施方式所涉及的光电转换装置所利用的阵列基板构成的平面图。
图6示出本发明的第三实施方式所涉及的光电转换装置所利用的阵列基板的构成的平面图。
图7示出现有技术所涉及的光电转换装置的一例的剖视图。
图8是图7的放大图。
图9示出现有技术所涉及的光电二极管的特性例的图表。
具体实施方式
〔第一实施方式〕
以下，利用图1至图4详细地说明本发明第一实施方式。
图1示出本实施方式所涉及的光电转换装置100所利用的阵列基板构成的平面图。如图1所示，形成有多个栅极电极2、多个源极电极(漏极电极)4。多个栅极电极2以及多个源极电极4分别平行设置。栅极电极2向横向延伸而形成，源极电极4向纵向延伸而形成。栅极电极2和源极电极4以隔着栅极绝缘膜3(图1中未图示，参照图2)相互交叉的方式形成。
氧化物半导体层5设置在栅极电极2的正上方。光电二极管9为PIN二极管，配置在相邻的源极电极4之间，且设于氧化物半导体层5的上方。光电二极管9具备有下部电极91。
源极电极13以通过光电二极管9上方的方式形成。源极电极13设置在相邻的氧化物半导体层5的源极电极4之间(尤其是，相邻的源极电极4之间的中央)。源极电极13和源极电极4以相互大致平行的方式配置。
接触孔是为了连接形成有元件的层和用于配线的层而穿过绝缘膜的开口部。接触孔(第一接触孔)21是用于连接源极电极4和下部电极91而设置。空隙部22是未设置光电二极管9的光电转换层92的部分。接触孔(第二接触孔)23是用于连接光电二极管9的上部电极和源极电极13而设置。在光电转换装置100中，接触孔21以及23配置在光电二极管9的内部(中央部附近)。在相邻的氧化物半导体层5的源极电极4之间中央形成接触孔21。
图2是图1的A-A’剖视图。如图2所示，光电转换装置100具备有基板1、栅极电极2、栅极绝缘膜3、源极电极4、氧化物半导体层5、钝化膜(第一绝缘层)6、平坦化膜(第一绝缘层)7、光电二极管9、SiNx绝缘膜(第二绝缘层)11、平坦化膜(第二绝缘层)12、以及源极电极13。光电二极管9具备有下部电极91、光电转换层92、以及上部电极93。
基板1是透明的绝缘性玻璃基板。栅极电极2形成在基板1上。栅极绝缘膜3形成在基板1以及栅极电极2上。源极电极4形成在栅极绝缘膜3上。为了连接栅极电极2和源极电极4，栅极绝缘膜3形成有接触孔(未图示)。
氧化物半导体层5为薄膜晶体管，形成在基板1的上方，尤其是，隔着栅极绝缘膜3形成在栅极电极2的正上方。钝化膜6以及平坦化膜7层叠在氧化物半导体层5的上方。具体而言，钝化膜6形成在栅极绝缘膜3、源极电极4以及氧化物半导体层5的上方。并且，平坦化膜7形成在钝化膜6的上方。
经由钝化膜6以及平坦化膜7所形成的接触孔20以及21，光电二极管9的下部电极91连接于氧化物半导体层5的源极电极4。
光电二极管9具有在上部电极93和下部电极91之间设置光电转换层92的结构。下部电极91形成在通过接触孔20、21露出的源极电极4的上方。光电转换层92形成在下部电极91的上方。上部电极93为IZO电极，形成在光电转换层92的上方。
SiNx绝缘膜11以及平坦化膜12层叠在光电二极管9的上方。具体而言，SiNx绝缘膜11连续地形成在下部电极91以及上部电极93的上方。并且，平坦化膜12形成在SiNx绝缘膜11上。
经由在SiNx绝缘膜11以及平坦化膜12形成的接触孔23，光电二极管9的上部电极93连接于光电二极管9的源极电极13。源极电极13形成在通过接触孔23露出的上部电极93的上方。换句话说，接触孔23形成在源极电极13的正下方。
图3是图2的放大图。如图3所示，接触孔21的正上方没有设置光电二极管9的光电转换层，而设置有空隙部22。即，在图3中没有图8所示的、现有技术所涉及的光电转换层92中的倾斜部，因此没有光电转换层92的膜厚与平坦部相比较小的部分。因此，不会有由反向偏置电压引起的电流变大的情况。
图4是示出本实施方式所涉及的光电二极管9的特性例的图表。在图4中，横轴Va表示施加于光电二极管9的下部电极91以及上部电极93的电压，纵轴Ia表示流向光电二极管9的电流。另外，“I photo”表示向光电二极管9照射规定的照度(例如，2000[lx])的光时的特性例，“I dark”表示向光电二极管9不照射光时的特性例。
在图4中，与图8所示的、现有技术所涉及的光电二极管9的特性例相比较的话，可知截止泄漏电流减少了。
〔第一实施方式的效果〕
根据上述结构，以接触孔21的正上方没有光电二极管9的方式设置空隙部22，因此能够减少光电二极管9中的截止泄漏电流。
接着，形成光电二极管9上部的源极电极13时，源极电极13的正下方形成接触孔21，由此能够确保光电二极管9的填充因子(表示光电二极管的性能的指标)。换句话说，在未设置光电转换层的接触孔21的正上方，形成遮光的源极电极13，由此光变的容易照射，从而高效率。
并且，通过将接触孔21以及源极电极13形成在相邻的源极电极4的中央，能够减少源极电极4和源极电极13之间的寄生电容。
〔第二实施方式〕
利用图5详细地说明本发明的第二实施方式。此外，为了便于说明，对与在上述实施方式中说明的元件具有相同功能的元件，标注相同的附图标记，省略其说明。
图5(a)是示出本实施方式所涉及的光电转换装置101所利用的阵列基板构成的平面图。如图5(a)所示，在光电转换装置101中，接触孔21设置在光电二极管9的周边。
图5(b)示出本实施方式所涉及的光电转换装置102所利用的阵列基板构成的平面图。如图5(b)所示，在光电转换装置101中，接触孔21配置在光电二极管9的角部。
〔第三实施方式〕
利用图6详细地说明本发明的第三实施方式。此外，为了便于说明，对与在上述实施方式中说明的元件具有相同功能的元件，标注相同的附图标记，省略其说明。
图6示出本实施方式所涉及的光电转换装置103所利用的阵列基板构成的平面图。如图6所示，将光电转换装置103作为平面从上方观看时，接触孔21上的空隙部22从源极电极13伸出。即便是上述的构成，如果接触孔21上的空隙部22和源极电极13部分地重叠，则起到光电转换层92(图6中未图示，参照图2)中光照射的面积变大的效果。
〔总结〕
本发明的第一方面所涉及的光电转换装置100具备：薄膜晶体管(氧化物半导体层5)，其形成在基板1上；第一绝缘层(钝化膜6、平坦化膜7)，其层叠于上述薄膜晶体管上；光电二极管9，其在上部电极93和下部电极91之间设置有光电转换层92，经由上述第一绝缘层所形成的第一接触孔(接触孔21)，上述光电二极管的下部电极连接于上述薄膜晶体管的漏极电极(源极电极4)，上述第一接触孔的正上方未设置有上述光电转换层。
根据上述构成，在光电转换装置中能够减少光电二极管的截止泄漏电流。
本发明的第二方面所涉及的光电转换装置在上述第一方面中，也可以在上述第一接触孔的正上方形成上述光电二极管的源极电极(13)。
根据上述构成，在未设置有光电转换层的第一接触孔的正上方形成遮光的源极电极，由此光变的容易照射，从而高效地配置。
本发明的第三方面所涉及的光电转换装置在上述第二方面中，也可以在相邻的上述薄膜晶体管的漏极电极之间的中央，形成有上述第一接触孔以及上述光电二极管的源极电极。
根据上述构成，能够使薄膜晶体管的漏极电极和光电二极管的源极电极之间的寄生电容减少。
本发明不限于上述各实施方式，能在权利要求所示的范围中进行各种变更，将不同的实施方式中分别公开的技术手段适当组合得到的实施方式也包含于本发明的技术范围。而且，能通过将各实施方式分别公开的技术手段组合而形成新的技术特征。
附图标记说明
1 基板
2 栅极电极
3 栅极绝缘膜
4 源极电极(漏极电极)
5 氧化物半导体层(薄膜晶体管)
6 钝化膜(第一绝缘层)
7 平坦化膜(第一绝缘层)
9 光电二极管
11 SiNx绝缘膜(第二绝缘层)
12 平坦化膜(第二绝缘层)
13 源极电极
21 接触孔(第一接触孔)
22 空隙部
23 接触孔(第一接触孔)
91 下部电极
92 光电转换层
921 n+层
922 i层
93 上部电极

Claims (3)

1.一种光电转换装置，其特征在于，其具备：
薄膜晶体管，其形成在基板上；
第一绝缘层，其层叠于所述薄膜晶体管上；
光电二极管，其在上部电极和下部电极之间设置有光电转换层，
经由所述第一绝缘层所形成的第一接触孔，所述光电二极管的下部电极连接于所述薄膜晶体管的漏极电极，
所述第一接触孔的正上方未设置有所述光电转换层。
2.如权利要求1所述的光电转换装置，其特征在于，所述第一接触孔的正上方形成所述光电二极管的源极电极。
3.如权利要求2所述的光电转换装置，其特征在于，在相邻的所述薄膜晶体管的漏极电极之间的中央，形成有所述第一接触孔以及所述光电二极管的源极电极。
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