CN1086832C - 具有多个写一次相变记录层的光学数据存储系统 - Google Patents

具有多个写一次相变记录层的光学数据存储系统 Download PDF

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CN1086832C
CN1086832C CN96195189A CN96195189A CN1086832C CN 1086832 C CN1086832 C CN 1086832C CN 96195189 A CN96195189 A CN 96195189A CN 96195189 A CN96195189 A CN 96195189A CN 1086832 C CN1086832 C CN 1086832C
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韦尼·伊萨米·伊迈诺
哈尔·杰维斯·罗森
库特·阿兰·鲁宾
瓦德·伟-崇·唐
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Abstract

光驱(10)使用光盘(12)，该光盘具有多个空间隔离的相变WORM记录层(51，66)。该光盘具有一透光基底，并且激光束入射到该基底上。至少在该基底上固定两层空间隔离的多薄膜记录重叠层(90，92)，各重叠层包括一WORM相变材料有效记录层。该光盘或者为空隙(78)结构或者为固体结构，其中在空隙结构中，在独立基底(50，56)上固定各记录重叠层，并利用空隙(78)隔离基底(50，56)，而在固体结构中，利用固体透光间隔层(22)隔离记录重叠层(90，92)。位于基底(50)和最远的记录重叠层之间各记录重叠层(90，92)，均包括一有效相变记录层(51)和与记录层(51)接触的光学干涉薄膜(53)，其中激光束入射到基底(50)上。以很薄的厚度加工记录层(51)，以使其具有良好的透光率，但在如此低的厚度，不利用其他层，则记录层(51)的反射率会很低，该层就不能充当具有合适伺服性能和记录性能的记录层。相对于相邻记录层(51)和间隔(122)，与记录层(51)接触的光学干涉薄膜(53)具有较高的折射率，以便增加记录重叠层(90)内的光学干涉效果。光学干涉薄膜(53)优化了记录重叠层的对比度、反射率和透光率。光学干涉薄膜(53)具有较低的吸收率，从而激光束能够经过该薄膜，在更远的记录层(66)上聚焦。这样，就能以合理的激光功率在更远的记录层(66)上进行写入。

Description

具有多个写一次相变记录层的 光学数据存储系统
本发明一般涉及光学数据存储系统，更确切地说，涉及采用多记录层光学介质的存储系统。
光学数据存储系统(如光盘)能够在光学介质上存储大量数据。并通过将激光束聚焦在介质记录层上，随后检测反射光束来访问该数据。
在写一次读多次(WORM)的系统中，通过在记录层产生永久标记，激光器写入数据。一旦将该数据记录在介质上，就不能擦除。根据所写标记和(该标记之间的)未写区域之间的反射率变化，检测WORM内的数据。在烧蚀WORM系统中，通过熔化记录层部分，从而在记录层产生物理凹槽，激光器写入数据。
与烧蚀WORM系统不同，相变WORM系统采用相变合金作为记录材料，通过局部将相变介质从一种结构相位(非晶体态)转变为另一种结构相位(晶体态)，激光器写入数据。通过加热非晶体区，并将其温度保持在结晶温度或结晶温度之上，或者通过熔化非晶体区，并缓慢冷却直至该区域结晶，就能实现以上相位变化。由于将该介质设计成其第二结构相位不会轻易转变为第一结构相位，所以能够实现WORM功能。另一种相变WORM系统采用混合或者熔合多个空间分离的金属层。在写入期间，激光器加热该介质的局部区域，使得最初分离的各层相互扩散，生成混合合金。根据介质上写入区和非写入区之间的反射率变化，检测以上两种类型相变WORM系统内的数据。
为了增加光盘的存储量，人们提出了多记录层系统。通过改变透镜的聚焦位置，就可以在不同的空间分离的记录层，访问具有两层或两层以上记录层的光盘。该方法的示例包括美国专利5,202,875、5,097,464和4,450,553。传统结构的一个问题是在光盘中存在边缘和间隔。
日本公开专利申请59-210543(申请人Morinaka)说明了用于多路复用光学记录技术的分层的光学介质结构。并用两个独立光线吸收层表示该结构，而没有任何直接相邻的介质层。由于采用汽相淀积法(该方法的淀积率太低，而不能够形成多记录层系统所需的隔离厚度)淀积隔离层，所以没有用足够厚的隔离层来隔离两个光线吸收层。
本发明为多记录层的相变WORM光盘和光驱。该光盘具有一透光基底，激光束入射到该基底上。该基底至少支持两个空间隔离的多薄膜记录重叠层，每个重叠层包括一个有效的相变WORM材料记录层。该光盘为固体结构，其中利用固体透光隔离层隔离记录重叠层。位于基底(激光束入射到该基底上)和最远的记录重叠层之间的各记录重叠层，均包括一有效记录层和一层与记录层接触的光学干涉薄膜。
以下参照附图，仅仅通过示例，说明本发明。其中附图为：
图1为本发明的多记录层相变光盘的光盘驱动系统的原理图；
图2A为具有空隙的多记录层光盘的剖面图；
图2B为双基底的分层的多记录层光盘的剖面图；
图2C为单基底的分层的多记录层光盘的剖面图；
图2D为具有防尘罩的分层的多记录层光盘的剖面图，其中防尘罩作为通过空隙与第一记录层隔离的基底；
图3为光盘驱动系统的光头和光盘的原理图，其中光盘为空隙结构，并具有两个记录层；
图4为光盘驱动系统的控制系统的框图；
图5为具有空隙的多记录层光盘的剖面图，说明根据本发明最佳实施方式的具有相邻光学干涉薄膜的多记录层；
图6A和图6B是根据本发明的具有两个记录层的光盘的第一数据层和第二数据层的回读数据抖动和标记长度作为激光写功率的函数的曲线；
图7为具有空隙的多记录层光盘的剖面图，说明根据本发明另一实施方式的具有相邻双层薄膜的多记录层；和
图8为具有空隙的多记录层光盘的剖面图，说明根据本发明又一实施方式的、第一记录层被夹在相邻薄膜之间的多记录层。
图1是根据本发明的光盘数据存储系统的原理图，其中用普通参数10标识该系统。系统10包括数据存储光盘12，最好以现有技术中的熟知方式将光盘12可装卸地安装在固定转轴14上。转轴14与转轴电机16相连，转轴电机16又与系统底座20相连。电机16转动转轴14和光盘12。
光头22位于光盘12之下。光头22与臂24相连，臂24又与启动设备(如音圈电机26)相连。音圈电机26被固定在底座20上，并且在光盘12之下，沿径向移动臂24和光头22。
图2A是光盘12的剖面图。光盘12具有基底50，基底50具有外表面49，激光束照射到该表面上。连接面板50和第二基底56之间的外径(OD)边缘52和内径(ID)边缘54。利用透光材料(如玻璃、聚碳酸酯或其他聚合物)制作基底50。可以利用与基底50类似的材料制作基底56，而在光线无需通过基底56的实施方式中，也可以利用不透光的材料制作基底56。在最佳实施方式中，基底50和56的厚度均为1.2mm。基底50具有一个薄膜记录重叠层90，基底56具有一个薄膜记录重叠层92。记录重叠层90和92分别包括一个有效的相变WORM材料记录层，和至少一个透射介质层，以下详细说明。通过注模、干膜处理或模压加工，基底50和56分别具有光学跟踪槽或光学跟踪标记和/或在邻近记录重叠层90、92的表面形成的标题信息。换句话说，跟踪特征可以是在基底内形成的槽，或者是记录在记录层的标记。OD和ID边缘52和54最好由塑料材料制成，其厚度大约为300微米。利用粘结剂、粘合剂、超声波焊接法、溶剂焊接法或其他常规焊接处理，将边缘52和54固定到基底50和56上。另外，在对基底进行注模加工时，可以在基底50和56内整体制作边缘52和54。当边缘52和54到位后，边缘52和54就在基底50和56之间形成环形空隙或间隙78。转轴孔80在ID边缘54内通过光盘12以便容纳转轴14。在ID边缘54(该边缘用于连接孔80和间隔78)内提供多个通道82，以使间隔78的压力和光驱周围环境的压力相等。在通道82上固定多个低阻抗过滤器84，以防止空气中的微小物质污染间隔78。过滤器84可以为石英或玻璃纤维。另外，通道82和过滤器84也可位于0D边缘52。
图3说明某种实施方式的光头22和光盘12的原理图。光头22包括激光二极管200，该二极管可以是砷化镓铝二极管激光器，它能够以固定波长产生主光束202。激光器二极管200至少能够以两个功率级运行，即第一写入功率级和较低的第二读出功率级，第一写入功率级足够高，以使得有效记录层改变相位，通过所写记录层内非晶体相位区域和晶体相位区域的反射，第二读出功率级用于读出数据。光束202由透镜203准直，并由圆偏振器204变成圆偏振光，到达分束器205。分束器205将部分光束202反射到透镜206和光学检测器207。检测器207用于监视激光束202的功率。随后，来自分束器205的光束202到达镜面208，并由镜面208反射。然后光束202通过透镜210，并在记录重叠层90和92之一上聚焦成为一个受衍射限制的光点。透镜210被安装在支架214上，并相对于光盘12利用聚焦启动电机216(可以为音圈电机)调整其位置。由聚焦启动电机216引起的透镜210的移动，使聚焦光点在(光盘12的基底50和基底56上的)两个记录重叠层90和92之间移动。
由记录重叠层90和92反射的部分光束202作为反射光束220。光束220经过透镜210返回，并由镜面208反射。在分束器205，将光束220对准散光镜232，并射向多元光学检测器234。
图4是光盘驱动系统的控制系统的框图，并用普通参数300标识。多元检测器234(图3)产生输出信号，该信号包括数据信号、聚焦误差信号(FES)和跟踪误差信号(TES)。这些信号由信号放大器236进行放大，并直接发送到控制器314。同时，峰值检测器310接收来自放大器236的FES信号，峰值检测器312接收来自放大器236的TES信号。同时，控制器314还接收来自FES峰值检测器310、TES峰值检测器312和激光功率检测器207的输入信号。控制器314是一个基于微处理器的光驱控制器。此外，控制器314还连接到激光器200、光头电机26、转轴电机16和聚焦启动电机216，并且控制这些设备。
图2B是另一实施方式的多记录层记录光盘112的剖面图，该记录光盘可以取代系统10内的光盘12。光盘112的元素与图2A所示的光盘12的元素类似，但光盘112并没有光盘12的边缘和间隔。利用固体透明间隔122隔离基底150和156。在最佳实施方式中，利用较高透射率的粘合剂制作间隔122，该间隔还用于粘合基底150和基底156。间隔122的厚度最好接近20-300微米。特定基低150和156上的记录重叠层190和192含有WORM材料。
图2C是又一实施方式的多记录层记录光盘412的剖面图，该记录光盘可以取代系统10内的光盘12。光盘412的元素与图2B所示的光盘112的元素类似。然而与上述实施方式不同，光盘412并未采用两个独立基底(即图2B中的基底150和156)。而是在单一基底450上设置多层结构。由固体间隔层422隔离WORM记录重叠层490和492。间隔层422为透光层，通过在基底450的记录重叠层490上进行分层或淀积(如干膜处理或旋涂)制成。在最佳实施方式中，透光间隔层422是由聚合材料(如聚碳酸酯)制成的。间隔层422的上表面具有跟踪槽和/或标题信息，通过干膜处理或模压处理在其表面上形成该标题信息。随后在间隔层422的顶部淀积第二WORM记录重叠层492。然后在记录重叠层492上制作最后一层聚合材料保护层456，如紫外(UV)辐射固化旋涂丙烯酸酯或具有粘附层的聚碳酸酯。
图2D是另一实施方式的多记录层记录光盘512的剖面图，该记录光盘能够代替系统10内的光盘12。在该实施方式中，光盘512包括固体光盘坯556。在光盘坯556上淀积WORM记录重叠层592，从而制成距离入射激光束最远的记录重叠层。在记录重叠层592之上制作固体间隔层522，并在间隔层522之上制作记录入射激光束最近的第一WORM记录重叠层590。通过旋涂处理在记录重叠层590之上制作保护层(如UV固化干膜)。塑料环536被焊接在间隔层522上，并沿间隔层522的外径延伸。塑料环536固定透明塑料防尘罩538。通常防尘罩538的厚度为100微米，延伸到塑料环536，并被焊接到塑料环536上。防尘罩538具有一外表面549，激光束入射到该表面上。防尘罩538在防尘罩和第一记录重叠层590之间形成一个空隙540，其厚度为0.2-2.0mm。光盘坯556最好由具有光滑表面的固体(如铝合金)制成。间隔层522为旋涂UV固化或热固化干膜，其典型厚度为10-150微米。防尘罩538是由透明聚合材料(如聚碳酸酯)制成的。
以下参照图2A所示的光盘结构，说明多记录层的WORM详细说明书和其生产方法。然而，利用图2B-2D所示的任何其他结构，本发明的多记录层的WORM系统也是可行的。
图5是光学数据存储光盘12的剖面图，其中光盘12具有多个相变WORM有效记录层51和66。光盘12具有基底50，基底50具有外表面49，激光束入射到该表面上。基底50最好由聚碳酸酯、非晶体聚烯烃(APO)、有机玻璃(PMMA)或玻璃制成，并且基底不吸收记录波长的光线。基底50的厚度最好1.2mm，但也可以采用其他厚度。可以在基底50的表面(与外表面49相对)上制作用于激光束跟踪伺服系统的预地址或预槽。通过溅射或蒸镀在基底50上淀积有效相变WORM材料的可记录薄膜51。该材料最好为AXSnYSbZ(3％＜X＜45％，，1％＜Y＜40％，45％＜Z＜96％，并且x+y+z＝100％)相变类型的合金，其厚度为2到15nm，其中A可以为In、Cr、Bi、Si和其他过渡金属。美国专利4,960,680说明了以上类型的相变合金。但是，如该专利所述，其材料为单层，并且其厚度至少要接近20nm。如果该材料的厚度大于20nm，则透光率将低于15％。从而常规厚度的材料并不适合于多记录层光盘，该光盘要求透光率高于35％，并且只有厚度低于7.5nm才能获得35％的透光率。另外，仅仅将厚度缩减到7.5nm以下以提高透光率将导致其他问题。如果厚度低于7.5nm，则非晶体相位和晶体相位的反射率将很低，从而不能确保精确聚焦和跟踪，即不能确保以较低的错误率读取数据。此外，若不采取保护措施，如此薄的相变层也易于腐蚀。
在本发明中，与记录层51接触淀积一层或多层附加薄膜(如光学干涉薄膜53)。利用薄膜的光学干涉效果，通过改变各层的厚度就能够调整多薄膜记录重叠层90(有效记录层51和薄膜53)的透射率、反射率和吸收率。薄膜53和记录层51一起组成干涉结构。如果恰当选择薄膜53的厚度，根据其厚度和其折射率的实部(n)，将出现相长干涉。对于给定的薄膜厚度，如果薄膜53的折射率的n值与其相邻层(记录层51和空气)的折射率的n值之差较大，则将增加干涉效果，并且将优化记录重叠层90反射的信号的对比度。光学干涉薄膜53应具有较低的吸收率(折射率的虚部较小，即较小的消光系数k)，从而当光点在第二记录层66上聚焦时，光点将以极小的吸收率通过记录层51和薄膜53。光学薄膜53最好为介质材料，如SiOx，TiOx，ZrOx，CuxO，SiN，SiC，非晶硅或有机聚合物等等，并可以利用溅射、蒸镀或旋涂在有效记录层51上进行淀积。适合用作光学干涉薄膜53的其他材料可以为元素的氧化物和氮化物，该元素可以从Al、Ti、Zr、Cu、Hf、Ta、Nb、Cr和W中进行选择。也可以采用混合有S、Se和Te(一种或几种)的介质材料(如Zn和Cr)。这些材料可以为非晶体相位，也可为晶体相位。如果为非晶体相位，则允许多种结构。例如，SiOx可以具有结构1＜x＜2.1。采用标准薄膜干涉计算公式来计算光学干涉效果，例如参见，固体薄膜的光学特性，O.H.Heavens，Academic出版社，1995。
薄膜53的另一重要特性是较低的热导率。由于有效记录层51具有较高的透光率(即较低的吸收率)，所以相变材料的写灵敏度将低于常规厚度的高吸收率的相变层的写灵敏度。因此，当激光器处于写功率级时，由于薄膜53与有效记录层51接触，所以薄膜53的热导率应该很低，从而有效降低了记录层51的热量流动。通常，薄膜53可以采用热导率小于0.1W/cm-K的非吸收材料。例如，在400degK时，SiOx的热导率为0.015W/cm-K。如果能够获得较高的激光功率，则可以放松要求薄膜53具有较低的热导率。同时介质薄膜53还作为较薄的有效记录层51的保护涂层，如果记录层之间的间隔为空隙的话，则非常需要保护涂层。
间隔层78与光学干涉薄膜53相邻，并隔离记录层51和记录层66。可以在第二有效相变记录层66上淀积一层非吸收保护层64，如旋涂干膜(UV-固化丙烯酸酯)。由于记录层66可以较厚，所以可以不要求层64作为保护层，也可以不要求层64加强记录层66的性能。在多记录层光盘中，第二记录层66是最后一层有效记录层，不必具有透射率。因此，该层可以为常规厚度，如20-200mm。与有效记录层51相比，较厚的有效记录层66具有较高的吸收率。因此，记录层66的写灵敏度较高，故与薄膜53相比，非吸收保护层64的热导率并不关键。从而，可以从具有较低吸收率的介质材料中选择层64，如上述所述层53所用的材料，而其厚度可为10nm到几微米。在第二基底56上淀积重叠层92(包括第二记录层66的和保护层64)。可以用基底50所用材料制作基底56，也可以用不透明材料(如不透明塑料材料)和金属材料(如铝)制作基底56。
如图5所示，在光盘12的最佳实施方式中，采用波长为780nm的激光器进行工作，基底50和基底56为聚碳酸酯，其厚度为1.2mm。第一有效记录层51为9nm厚的In15Sn20Sb65。该薄膜本身透射大约29％的入射光线，其反射率为13％。通过淀积150nm的SiO2(其中n＝1.5)光学干涉薄膜53，重叠层90的透过率变为41％，反射率变为20％。对现有的激光二极管光源，要想获得良好信噪比的可靠操作，就要求相变WORM记录结构满足：透光率大于35％，反射率大于10％。空隙78的厚度为200微米。基底56上的第二有效记录层66为75nm厚的In15Sn20Sb65。保护层为2微米厚的旋涂干膜(UV-固化丙烯酸酯)。如果采用较短波长的激光束以便减小光点尺寸，增加记录密度，则需要调整记录层51和薄膜53的厚度。例如，对于波长为500nm的激光，薄膜53的厚度最好为110nm，记录层51的厚度为8nm。
根据图5所示的结构，与上述最佳实施方式类似，在两层光盘的特例中，有效记录层51和66是用In15Sn2Sb65制成的，而透明介质层53和64是用SiO2制成的。在聚碳酸酯基底50上溅积厚度为8nm的层51。在层51上溅积厚度为15nm的介质层53。在聚碳酸酯56上溅积厚度为75nm的第二数据层66。在有效层66上溅积厚度为15nm的SiO2保护层64。随后焊接两个基底，其中空隙78的厚度为300微米。两记录重叠层90和92(记录层51和66以及其相关的光学干涉层53和64)的透光率、反射率和吸收率如表1所示：
                              表  1
    层号(见图5)   厚度(nm)   透光率(％)   反射率(％)    吸收率(％)
    1(51)(层53)    815     44     17     39
    2(66)(层64)    7515     1     31     68
利用动态测试实验台测试以上两层光盘。通过0.55数字孔径的透镜聚焦波长为780nm的激光束。转动光盘，局部介质速度为10.7m/s。采用12ns的激光脉冲记录8个时钟周期的脉冲宽度调制(PWM)数据。每个时钟周期为35.4ns。图6A和图6B为各记录层从标记尾部边缘到尾部边缘(TE-TE)“抖动”的回读数据图形(作为激光写功率的函数)。抖动用于度量所写标记从光盘上理想位置的迁移偏差。在正确标记长度的较低抖动，对于确保以最低的误差回读数据是很重要的。在最坏情况下，抖动最好小于Tc的5％，当时钟周期为35.4ns时，抖动应小于1.8ns。如图6A-6B所示，在8Tc＝283.2ns正确标记长度，显示两个记录层的回读数据具有较低的抖动，小于1.2ns。对于两个记录层，要获得以上较低的抖动，要求写功率小于23mW，而现有的商品化的激光器能够实现该要求。
如图2A所示，我们采用空隙结构说明了本发明的最佳实施方式，但图2B-2D所示的其他光盘结构也是可行的。
图7是光盘12的另一种实施方式的剖面图，标识为12′。用X′(X为整数)标识与光盘12之要素类似的光盘12′之要素。在第一记录层51′上淀积两层透光薄膜55和57，以替代薄膜53(图5)。在某些情况下，如果不能选出高折射率低热导率的材料(例如，由于生产条件较差)，则可以使用一对透明薄膜。因此，在光盘12′内，用薄膜组合55和57实现单层薄膜53之功能。薄膜55应具有较低的热导率(但并不要求其n较高)，而薄膜57应具有较高的n(但并不要求其具有较低的热导率)。薄膜55最好为介质材料，如SiOx，TiOx，ZrOx，CuxO或有机聚合物等等。而薄膜57最好为低吸收率的介质材料，如上述薄膜层53(图5)所使用的材料。通过调整层55和57的厚度，可以优化记录层51′的光学特性。例如，薄膜55可以采用厚度为10-80nm的SiO2，而层57可以采用厚度为20-100nm的SiNx。另外，也可以修改第二记录层66′。可以调整保护层64′的厚度，采用光学干涉效果，以使第二记录层66′的信号对比度最大。通过蒸镀或溅射在第二记录层66′上淀积SiOx，其厚度为50-200nm。与不采用任何光学干涉镀膜的有效记录层66′相比，利用以上SiOx薄膜层64′，信号对比度增加1.3倍到2.2倍。当要求增加信噪比时，例如对高密度脉冲宽度调制(PWM)记录技术，提高信号对比度是有用的。另外，可以在基底和有效记录层51′之间的基底50′上，淀积记录层51′上的介质膜55和57，以取代在有效记录层51′的顶部淀积介质膜55和57。这是由于生产问题(如各层之间粘合问题)，需要把介质镀膜放在记录层51′和基底50′之间。
图8是光盘12的另一种实施方式的剖面图，标识为12″。用X″(X为整数)标识与光盘12之要素类似的光盘12″之要素。与图7所示的光盘12′的实施方式类似，多记录层WORM光盘12″具有两层与有效记录层51″相邻的非吸收薄膜72和74。其差别在于有效记录层51″夹在非吸收薄膜72和74之间。直接在基底50″上淀积介质薄膜72，随后在薄膜72上淀积有效相变记录层51″，最后在有效记录层51″上淀积薄膜74。激光束经过非吸收薄膜72，然后到达记录层51″。此外，以上三层薄膜记录重叠层90″还利用光学干涉效果以便达到最好性能。薄膜72和74的作用与图5所示的光盘12的薄膜53的作用相同。因此，薄膜72和74应具有较低的热导率和较高的n值。与光盘12的结构相比，以上结构的优点在于：在较高的写功率条件下，可能出现记录层烧蚀。由于烧蚀可能增加安置数据标记的误差，所以我们不希望相变介质中的烧蚀。借助所示夹层结构，会使记录层内出现烧蚀的可能性变得最小。在图8所示的最佳实施方式的结构中，利用波长为780nm的激光器进行操作，基底50″和56″为1.2mm厚的聚碳酸酯。第一介质层72为2nm厚的SiO2。第一有效记录层51″为8nm厚的In15Sn20Sb65。第二介质层74为2微米厚的旋涂UV-固化丙烯酸酯。空隙78″的厚度为200微米。基底56″上的第二有效记录层66″为75nm厚的In15Sn20Sb65。保护层64″为2微米厚的旋涂UV-固化丙烯酸酯。
我们采用仅仅有两个记录层的多记录层的光盘附图说明了本发明。然而，可以有两层以上的记录层。在第一记录层和第二记录层之间，可以附加一层或多层记录层以及相关的光学干涉薄膜。例如，如果在图5所示的最佳实施方式中包括第三记录层(以及与其接触的第二光学干涉薄膜)，则第一记录层将为7nm厚的In15Sn20Sb65，第一光学干涉薄膜将为150nm厚的SiO2。第三记录层将为7nm厚的In15Sn20Sb65，第二光学干涉薄膜将为150nm厚的SiO2。这样，各记录重叠层的透光率为50％，从而25％的入射到第一基底上的激光束将到达第二记录层或最远记录层。
可以采用其他材料组合作为相变WORM记录层(51，51′，51″，66，66′，66″)，以代替相变类型的AxSnySbz合金，其中该材料组合经历了从非晶体态到晶体态的转变，并且与两种结构状态有关的反射率差别显著。指导选择可行组合的一般原则为：材料为理想配比组合，或接近理想配比组合。该组合材料在晶体态期间几乎不发生相位分离。结晶到稳定相位或亚稳定相位的材料能够得到该状态。通常，结晶最快的材料是最可行的材料。另外，对于其结晶并不特别快的材料而言，其薄膜结构应为相对绝热的，以便降低冷却速度。其目的是防止结晶点又回到非晶体态相位(由于聚焦激光束熔化记录层)。上一个要求的目的是确保该材料只能被写一次。这意味着具有较高热导率的材料(如金属层)不应与记录层直接接触，也不应利用较薄(例如，小于30nm)的介质层进行隔离。
最合适的二元混合物材料包括：GeTe、SnTe、PbTe、SbSe、Sb2Se3、Sb(1-x)Se(其中0＜x＜0.4)、Bi2Se、Sbi2Se3、Bi2Te、BiTe、Bi2Te3、Sb2Te、SbTe、Sb2Te3、TeSi、Ag2Se、AgSe2、Ag2Te、Ag3Te2、AgTe2、Au2Se3、AuTe2、GaSb和GeSe。另外，这些混合物可以稍微偏离其理想配比，并且通过添加成核剂(如Ti、Sn或Cr)能够快速结晶。适合用作相变WORM的三元混合物包括沿成分连接线(该连接线连接GeTe和Sb2Te3)方向的混合物，确切地说，包括GeSb2Te4、Ge2Sb2Te5、GeSb4Te7，或者沿该连接线方向具有少量Sb、Ti、Pd、Sn或Cr的混合物。其他材料包括In3SbTe2。另一种材料混合物为(InSb)1-x(GaSb)x，其中.5＜x＜＝1。另外，加有金属添加物(如Pd、Ni或Cu)的TeOx、GeOx、SbOx和InOx类型的低价氧化物薄膜作为有效记录薄膜也是可行的。这些低价氧化物利用热力驱动非晶体态到晶体态的相位转换作为记录机制。对于每种材料，根据上述说明确定非吸收层53、55、57、64、72和74(及其主要对应物)的新的厚度。
我们利用光驱实施方式说明了本发明。然而，对于其他类型的光学数据存储系统，本发明也是可行的。通常这些系统具有以下特征：即可以卸下存储数据的介质。公共系统以光带或光卡的形式使用光学介质。与光带或光卡相连的驱动器通过平移移动光带或光卡进行数据读写，而对于光盘，则通过旋转进行数据读写。最好利用多记录层相变WORM材料，来增加光带或光卡的数据存储量。对于光带或光卡，可以将多记录重叠层固定在不透明基底上，并覆盖透明保护层，其中激光束入射到保护层上。此时，保护层的作用与上述光盘基底的作用相同。光带和光卡的保护层以及光盘基底均为透明构件，该透明构件具有一外表面，激光束入射到该外表面，并且经过该表面到达记录重叠层。

Claims (5)

1.一种光学数据记录介质(12)，该介质包括：
(a)第一构件(50)，该构件透射激光，具有第一表面，该表面形成光盘的外表面(49)，激光束入射到该外表面，
(b)利用该构件从该构件外表面隔离的、写一次相变材料的第一记录层(51)，
(c)与第一记录层接触的透光的光学干涉薄膜(53)，其中光学干涉薄膜的折射率与第一记录层的折射率明显不同，其厚度足以保证光线的相长干涉，并且第一记录层以及与该记录层接触的光学干涉薄膜能够透光；和
(d)从第一记录层隔离的写一次相变材料的第二记录层(66)，
因此，当激光束在第一记录层上聚焦时，激光束从第一记录层(51)和光学干涉薄膜(53)反射回来，当激光束在第二记录层上聚焦时，激光束将透过第一记录层以及与该记录层接触的光学干涉薄膜，
其特征在于该光学数据记录介质还包括：
(e)透光间隔层(122)，该间隔层位于第一记录层(51)和第二记录层(66)之间，并利用所述间隔层的厚度隔离第一记录层(51)和第二记录层(66)，并且
在间隔层(122)上制作第二记录层(66)。
2.根据权利要求1的光介质，其中光介质为光盘，并且激光束入射到的第一构件(50)为基底。
3.根据权利要求2的光盘(12)，还包括一个第二基底(56)，其中在第二基底上制作第二记录层(66)，并且利用空隙(78)隔离第一基底(50)和第二基底。
4.根据权利要求2的光盘(512)，还包括一光盘坯(556)和圆环(536)，圆环与光盘坯相连，并沿光盘坯的外径扩展，其中基底为利用圆环支持的塑料防尘罩(538)。
5.根据权利要求4的光盘，还包括一透光间隔层(522)，该层位于第一记录层(590)和第二记录层(592)之间，并且隔离第一记录层和第二记录层，其中在光盘坯(556)上形成第二记录层，在间隔层上形成第一记录层，并利用空隙(540)隔离第一记录层和塑料防尘罩(538)。
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KR19990022604A (ko) 1999-03-25
EP0835508A1 (en) 1998-04-15
US5555537A (en) 1996-09-10
DE69605422T2 (de) 2000-06-08
WO1997002564A1 (en) 1997-01-23
DE69605422D1 (de) 2000-01-05
KR100264304B1 (ko) 2000-08-16
JP3154496B2 (ja) 2001-04-09
MY112838A (en) 2001-09-29
CN1189913A (zh) 1998-08-05
TW302475B (zh) 1997-04-11
JP2000500262A (ja) 2000-01-11
CA2220879A1 (en) 1997-01-23
BR9609637A (pt) 1999-02-17
HK1018839A1 (en) 2000-01-07
CA2220879C (en) 2002-04-02
EP0835508B1 (en) 1999-12-01

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