CN108630668B - 半导体装置 - Google Patents
半导体装置 Download PDFInfo
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- CN108630668B CN108630668B CN201710711611.0A CN201710711611A CN108630668B CN 108630668 B CN108630668 B CN 108630668B CN 201710711611 A CN201710711611 A CN 201710711611A CN 108630668 B CN108630668 B CN 108630668B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5384—Conductive vias through the substrate with or without pins, e.g. buried coaxial conductors
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- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0655—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next to each other
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
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- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
- H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
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- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- H01L2924/181—Encapsulation
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
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- Computer Hardware Design (AREA)
- Dram (AREA)
Abstract
Description
Claims (3)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017-055239 | 2017-03-22 | ||
JP2017055239A JP6679528B2 (ja) | 2017-03-22 | 2017-03-22 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108630668A CN108630668A (zh) | 2018-10-09 |
CN108630668B true CN108630668B (zh) | 2021-12-07 |
Family
ID=63581080
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710711611.0A Active CN108630668B (zh) | 2017-03-22 | 2017-08-18 | 半导体装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US10186487B2 (zh) |
JP (1) | JP6679528B2 (zh) |
CN (1) | CN108630668B (zh) |
TW (1) | TWI648801B (zh) |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101101909A (zh) * | 2006-07-04 | 2008-01-09 | 株式会社瑞萨科技 | 半导体器件及其制造方法 |
CN101330076A (zh) * | 2007-06-20 | 2008-12-24 | 海力士半导体有限公司 | 穿透硅通道芯片堆叠封装 |
CN100570738C (zh) * | 2005-03-30 | 2009-12-16 | 尔必达存储器株式会社 | 具有多个层叠的存储芯片的半导体存储器件 |
CN102354519A (zh) * | 2010-05-25 | 2012-02-15 | 三星电子株式会社 | 三维半导体器件 |
CN103022021A (zh) * | 2011-09-22 | 2013-04-03 | 株式会社东芝 | 半导体装置及其制造方法 |
CN104167406A (zh) * | 2013-05-16 | 2014-11-26 | 三星电子株式会社 | 半导体封装件 |
CN104916624A (zh) * | 2014-03-14 | 2015-09-16 | 株式会社东芝 | 半导体装置及其制造方法 |
CN105990267A (zh) * | 2014-09-17 | 2016-10-05 | 株式会社东芝 | 半导体装置 |
CN106201431A (zh) * | 2015-05-28 | 2016-12-07 | 株式会社东芝 | 半导体装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4507101B2 (ja) * | 2005-06-30 | 2010-07-21 | エルピーダメモリ株式会社 | 半導体記憶装置及びその製造方法 |
US8031505B2 (en) * | 2008-07-25 | 2011-10-04 | Samsung Electronics Co., Ltd. | Stacked memory module and system |
KR101683814B1 (ko) * | 2010-07-26 | 2016-12-08 | 삼성전자주식회사 | 관통 전극을 구비하는 반도체 장치 |
KR20120119960A (ko) * | 2011-04-21 | 2012-11-01 | 삼성전자주식회사 | 마이크로 범프 연결성을 테스트할 수 있는 반도체 장치 |
EP3751604A1 (en) * | 2011-08-16 | 2020-12-16 | INTEL Corporation | Offset interposers for large-bottom packages and large-die package-on-package structures |
JP5964440B2 (ja) | 2011-10-03 | 2016-08-03 | インヴェンサス・コーポレイション | ウインドウを用いないワイヤボンドアセンブリに対して端子の2重の組を使用するスタブ最小化 |
US8513813B2 (en) | 2011-10-03 | 2013-08-20 | Invensas Corporation | Stub minimization using duplicate sets of terminals for wirebond assemblies without windows |
JP6071929B2 (ja) | 2014-03-13 | 2017-02-01 | 株式会社東芝 | 半導体装置 |
JP6145793B2 (ja) | 2014-09-04 | 2017-06-14 | コニカミノルタ株式会社 | シート供給装置及び画像形成装置 |
-
2017
- 2017-03-22 JP JP2017055239A patent/JP6679528B2/ja active Active
- 2017-08-03 TW TW106126197A patent/TWI648801B/zh active
- 2017-08-18 CN CN201710711611.0A patent/CN108630668B/zh active Active
- 2017-08-28 US US15/688,848 patent/US10186487B2/en active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100570738C (zh) * | 2005-03-30 | 2009-12-16 | 尔必达存储器株式会社 | 具有多个层叠的存储芯片的半导体存储器件 |
CN101101909A (zh) * | 2006-07-04 | 2008-01-09 | 株式会社瑞萨科技 | 半导体器件及其制造方法 |
CN101330076A (zh) * | 2007-06-20 | 2008-12-24 | 海力士半导体有限公司 | 穿透硅通道芯片堆叠封装 |
CN102354519A (zh) * | 2010-05-25 | 2012-02-15 | 三星电子株式会社 | 三维半导体器件 |
CN103022021A (zh) * | 2011-09-22 | 2013-04-03 | 株式会社东芝 | 半导体装置及其制造方法 |
CN104167406A (zh) * | 2013-05-16 | 2014-11-26 | 三星电子株式会社 | 半导体封装件 |
CN104916624A (zh) * | 2014-03-14 | 2015-09-16 | 株式会社东芝 | 半导体装置及其制造方法 |
CN105990267A (zh) * | 2014-09-17 | 2016-10-05 | 株式会社东芝 | 半导体装置 |
CN106201431A (zh) * | 2015-05-28 | 2016-12-07 | 株式会社东芝 | 半导体装置 |
Also Published As
Publication number | Publication date |
---|---|
US20180277484A1 (en) | 2018-09-27 |
JP2018160480A (ja) | 2018-10-11 |
TW201836028A (zh) | 2018-10-01 |
US10186487B2 (en) | 2019-01-22 |
CN108630668A (zh) | 2018-10-09 |
JP6679528B2 (ja) | 2020-04-15 |
TWI648801B (zh) | 2019-01-21 |
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