CN108610055B - 一种低温液相烧结制备致密氮化硅陶瓷的方法 - Google Patents
一种低温液相烧结制备致密氮化硅陶瓷的方法 Download PDFInfo
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- CN108610055B CN108610055B CN201611139396.3A CN201611139396A CN108610055B CN 108610055 B CN108610055 B CN 108610055B CN 201611139396 A CN201611139396 A CN 201611139396A CN 108610055 B CN108610055 B CN 108610055B
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- 238000005245 sintering Methods 0.000 title claims abstract description 71
- 239000000919 ceramic Substances 0.000 title claims abstract description 49
- 229910052581 Si3N4 Inorganic materials 0.000 title claims abstract description 46
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims abstract description 45
- 239000007791 liquid phase Substances 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 title claims abstract description 21
- 239000000843 powder Substances 0.000 claims abstract description 21
- 235000015895 biscuits Nutrition 0.000 claims abstract description 20
- 238000001035 drying Methods 0.000 claims abstract description 12
- 239000011812 mixed powder Substances 0.000 claims abstract description 10
- 238000002156 mixing Methods 0.000 claims abstract description 9
- 238000003825 pressing Methods 0.000 claims abstract description 9
- 238000007873 sieving Methods 0.000 claims abstract description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052593 corundum Inorganic materials 0.000 claims abstract description 6
- 229910001845 yogo sapphire Inorganic materials 0.000 claims abstract description 6
- 239000004615 ingredient Substances 0.000 claims abstract description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 18
- 238000009694 cold isostatic pressing Methods 0.000 claims description 12
- 229910052757 nitrogen Inorganic materials 0.000 claims description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- 238000000748 compression moulding Methods 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 239000001307 helium Substances 0.000 claims description 4
- 229910052734 helium Inorganic materials 0.000 claims description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 4
- 239000002245 particle Substances 0.000 claims description 4
- 238000002390 rotary evaporation Methods 0.000 claims description 3
- 238000001291 vacuum drying Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 9
- 238000009766 low-temperature sintering Methods 0.000 abstract description 4
- 239000012071 phase Substances 0.000 abstract description 3
- 230000005496 eutectics Effects 0.000 abstract description 2
- 239000002131 composite material Substances 0.000 abstract 1
- 229910010293 ceramic material Inorganic materials 0.000 description 13
- 238000000498 ball milling Methods 0.000 description 12
- 238000010438 heat treatment Methods 0.000 description 11
- 238000000465 moulding Methods 0.000 description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 8
- 229910052799 carbon Inorganic materials 0.000 description 8
- 238000001816 cooling Methods 0.000 description 8
- 239000002994 raw material Substances 0.000 description 7
- 239000000203 mixture Substances 0.000 description 6
- 239000002904 solvent Substances 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- 238000005452 bending Methods 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000007731 hot pressing Methods 0.000 description 2
- 238000004321 preservation Methods 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/584—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride
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CN201611139396.3A CN108610055B (zh) | 2016-12-12 | 2016-12-12 | 一种低温液相烧结制备致密氮化硅陶瓷的方法 |
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CN110937903B (zh) * | 2019-11-07 | 2021-06-15 | 中国科学院上海硅酸盐研究所 | 一种高强度、高导热性的氮化硅陶瓷材料及其制备方法 |
CN111517806B (zh) * | 2020-04-26 | 2021-12-07 | 中国科学院上海硅酸盐研究所 | 一种高韧性氮化硅陶瓷及其制备方法 |
CN111606717A (zh) * | 2020-06-08 | 2020-09-01 | 浙江锐克特种陶瓷有限公司 | 一种高强高硬氮化硅耐磨片的制备方法 |
CN112661518B (zh) * | 2020-12-25 | 2022-03-25 | 中材高新氮化物陶瓷有限公司 | 一种高导热氮化硅陶瓷绝缘板及其制备方法 |
CN116217239A (zh) * | 2023-03-22 | 2023-06-06 | 中国科学院上海硅酸盐研究所 | 一种高热导率低电阻率氮化硅陶瓷的制备方法 |
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CN104045350A (zh) * | 2013-03-11 | 2014-09-17 | 中国科学院上海硅酸盐研究所 | 一种采用反应烧结工艺制备氮化硅-碳化硅复合陶瓷材料的方法 |
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CN104045350A (zh) * | 2013-03-11 | 2014-09-17 | 中国科学院上海硅酸盐研究所 | 一种采用反应烧结工艺制备氮化硅-碳化硅复合陶瓷材料的方法 |
Non-Patent Citations (2)
Title |
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Densification, Microstructure and Properties of Si3N4-Ti(C,N) Composites;M. Herrmann et al.;《Journal of the European Ceramic Society》;19931231;第12卷;2试验方法 * |
Si3N4-TiC0.5N0.5复相陶瓷的制备及切削性能研究;古尚贤 等;《人工晶体学报》;20150531;第44卷(第5期);2实验部分,表1、表3 * |
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