CN108551912A - A kind of method of Low Temperature Plasma Treating stolon stimulation eremochloa ophiuroides fast-growth - Google Patents
A kind of method of Low Temperature Plasma Treating stolon stimulation eremochloa ophiuroides fast-growth Download PDFInfo
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- CN108551912A CN108551912A CN201810059603.7A CN201810059603A CN108551912A CN 108551912 A CN108551912 A CN 108551912A CN 201810059603 A CN201810059603 A CN 201810059603A CN 108551912 A CN108551912 A CN 108551912A
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- stolon
- temperature plasma
- eremochloa ophiuroides
- low temperature
- growth
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- A—HUMAN NECESSITIES
- A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
- A01G—HORTICULTURE; CULTIVATION OF VEGETABLES, FLOWERS, RICE, FRUIT, VINES, HOPS OR SEAWEED; FORESTRY; WATERING
- A01G7/00—Botany in general
- A01G7/06—Treatment of growing trees or plants, e.g. for preventing decay of wood, for tingeing flowers or wood, for prolonging the life of plants
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- Life Sciences & Earth Sciences (AREA)
- Biodiversity & Conservation Biology (AREA)
- Ecology (AREA)
- Forests & Forestry (AREA)
- Engineering & Computer Science (AREA)
- Wood Science & Technology (AREA)
- Botany (AREA)
- Environmental Sciences (AREA)
- Cultivation Of Plants (AREA)
Abstract
The present invention relates to the methods that a kind of low temperature plasma pretreatment stolon stimulates eremochloa ophiuroides fast-growth, include the following steps：（1）Eremochloa ophiuroides stolon is impregnated into 18 h in 30 ~ 35 DEG C of clear water；（2）With dielectric impedance helium Low Temperature Plasma Treating stolon, treatment conditions：Handle 150 ~ 450 W of intensity, 10 ~ 20 s of processing time, 2 cm of pole plate spacing, 150 Pa of pressure, 13.56 kHz of frequency；（3）Stolon is impregnated to 18 ~ 24 h after processing in 30 DEG C of clear water；（4）Stolon after immersion, which is planted into flowerpot, to be cultivated.Low-temperature plasma processing eremochloa ophiuroides stolon can make its underground part dry weight, root/shoot ratio, total root long, root volume, root surface area and average root diameter increase by 12 ~ 41%, 8 ~ 20%, 18 ~ 33%, 30 ~ 62%, 33 ~ 64% and 7 ~ 31%, make overground part dry weight, panel length（Four section）, the number of blade and leaf area increase by 7 ~ 19%, 20 ~ 61%, 7 ~ 22% and 21 ~ 36%.New method provided by the invention is easy to operate, at low cost, quick, pollution-free, can effectively facilitate eremochloa ophiuroides stolon underground part and overground part growth.
Description
Technical field
The present invention relates to the methods that a kind of low temperature plasma pretreatment stolon stimulates eremochloa ophiuroides fast-growth, belong to grass
Level ground grass cultivation field.
Background technology
Eremochloa ophiuroides (Eremochloa ophiuroides (Munro.) Hack.) is grass family Eremochloa perennial root
Property plant, one of three big warm season turf of the world are distributed widely in China Yangtze river basin and areas to the south.With leaf excellent
The advantages such as beautiful, the green phase is long, barren-resistant, pest and disease damage is few, maintenance level is low, therefore it is known as " the best warm-season turf of China
Grass ".Eremochloa ophiuroides is widely used in the planting on garden lawn, have a rest lawn and slope protecting grassplot, is especially suitable for water and soil conservation and large area
Landscape construction.In addition, eremochloa ophiuroides is also good herbage.
Eremochloa ophiuroides is usually bred with vegetative reproduction method and lawn planting in production.But eremochloa ophiuroides stolon is especially
It is the slow-growing problem of root system generally existing, causes early stage turf-grass growth and development slow, hence it is evident that turf speed is reduced, from
And expend a large amount of manpower and financial resources, hence it is evident that increase the cost of eremochloa ophiuroides planting.However promote the life of eremochloa ophiuroides stolon at present
Long method is mainly chemical reagent infusion method, although eremochloa ophiuroides can be promoted to grow to a certain extent, that there are types is more,
The problems such as concentration range is wide, of high cost, pollution environment, it is difficult to which scale is for producing.Therefore, it is necessary to explore it is a kind of quickly,
Simply, low cost, the technology of safety, to adapt to the needs of actual production.
Low Temperature Plasma Treating technology is the modern agriculture new and high technology for promoting crops significantly to increase production.Low-temperature plasma
Body technique is widely used in the fields such as chemical industry, medicine, environmental protection, still belongs to new research field in agriculturally application.Low temperature plasma
Process object is all seed, however has no the research report of the technical finesse vegetative material (such as stolon) so far,
Have no that the research to turfgrass (including eremochloa ophiuroides) growth result is reported.
Invention content
It is an object of the invention to for the slow-growing problem of eremochloa ophiuroides, provide a kind of economic and practical and safe and effective
Stimulation eremochloa ophiuroides stolon fast-growth method, include the following steps：
(1) 3~4cm of length is selected, including the eremochloa ophiuroides stolon of two sections and two panels leaf is placed in 30~35 DEG C of clear water and impregnates
18 h。
(2) dielectric impedance helium Low Temperature Plasma Treating, treatment conditions are used after drying the stolon in step (1)
For：Processing power is 150~450W, and processing time is 10~20s, and pole plate spacing is 2cm, and pressure is 50~150Pa, and frequency is
13.56kHz；
Low Temperature Plasma Treating power in the preferred step (2) is 300W, processing time 15s.
(3) by the eremochloa ophiuroides stolon that step (2) obtains be placed in 30 DEG C of clear water impregnate 18~for 24 hours.
Soaking time is 20h in the preferred step (3).
(4) it in the eremochloa ophiuroides stolon planting flowerpot that step (3) obtains, is placed under 25~35 DEG C of illumination and cultivates.
Compared with prior art, the present invention having the following advantages that and effect：
For the present invention by low temperature plasma application in promoting eremochloa ophiuroides trophosome (stolon) to grow, this method is at low cost, simple
Easy row, safety and environmental protection can effectively facilitate eremochloa ophiuroides underground part and overground part growth, make underground part dry weight, root/shoot ratio, total root
Length, root volume, root surface area and average root diameter increase separately 12~41%, 8~20%, 18~33%, 30~62%, 33
~64% and 7~31%, overground part dry weight, panel length (fall four section), the number of blade and leaf area is made to increase separately 7~19%,
20~61%, 7~22% and 21~36%.
Description of the drawings
Fig. 1 is eremochloa ophiuroides growing state under different disposal；Eremochloa ophiuroides underground part and overground part growth ginseng under Fig. 2 different disposals
Number；Eremochloa ophiuroides underground part and overground part growth parameter(s) under Fig. 3 different disposals；Eremochloa ophiuroides underground part and ground under Fig. 4 different disposals
Portion's growth parameter(s).
Specific implementation mode
Below in conjunction with example, the present invention is described in detail：This implementation power under based on the technical solution of the present invention into
Row is implemented, and gives detailed embodiment and process, but the scope of the present invention is not limited to following embodiments.It is real below
The condition being not specified in example and method etc. are applied according to conventional progress.
Embodiment 1
(1) 3~4cm of length is selected, includes the eremochloa ophiuroides stolon of two sections and two panels leaf, stolon is placed in 30~35 DEG C clearly
18h is impregnated in water；
(2) dielectric impedance helium Low Temperature Plasma Treating stolon, processing power 150W, processing time 10s, pole plate are used
Spacing is 2cm, pressure 150Pa, frequency 13.56kHz；
It (3) will treated that stolon is placed in 30 DEG C of distilled water impregnates 18h；
(4) it by the stolon plant to flowerpot after immersion, is placed under 25~35 DEG C of illumination and cultivates.
The present invention can effectively facilitate eremochloa ophiuroides underground part and overground part growth (Fig. 2).Underground part growth parameter(s) such as underground
Portion's dry weight, root/shoot ratio, total root long, root volume, root surface area and average root diameter relatively control increase by 12.20%, 8.26%,
18.51%, 30.80%, 33.19% and 7.87%.Overground part growth parameter(s) such as overground part dry weight, panel length (four section),
Relatively control increases by 7.58%, 20.48%, 15.46% and 21.32% respectively for the number of blade and leaf area.
Embodiment 2
(1) 3~4cm of length is selected, includes the eremochloa ophiuroides stolon of two sections and two panels leaf, stolon is placed in 30~35 DEG C clearly
18h is impregnated in water；
(2) dielectric impedance helium Low Temperature Plasma Treating stolon, processing power 300W, processing time 15s, pole plate are used
Spacing is 2cm, pressure 150Pa, frequency 13.56kHz；
It (3) will treated that stolon is placed in 30 DEG C of clear water impregnates 20h；
(4) it by the stolon plant to flowerpot after immersion, is placed under 25~35 DEG C of illumination and cultivates.
The present invention effectively facilitates eremochloa ophiuroides underground part and overground part growth (Fig. 3).Underground part growth parameter(s) such as underground part is dry
Weight, root/shoot ratio, total root long, root volume, root surface area and average root diameter relatively control increase by 40.67%, 19.01%,
32.41%, 56.12%, 63.23% and 30.32%, overground part growth parameter(s) such as overground part dry weight, panel length (four section),
Relatively control increases by 18.85%, 60.24%, 21.65% and 35.14% respectively for the number of blade and leaf area.
Embodiment 3
(1) 3~4cm of length is selected, includes the eremochloa ophiuroides stolon of two sections and two panels leaf, stolon is placed in 30~35 DEG C clearly
18h is impregnated in water；
(2) dielectric impedance helium Low Temperature Plasma Treating stolon, processing power 450W, processing time 20s, pole plate are used
Spacing is 2cm, pressure 50Pa, frequency 13.56kHz；
It (3) will treated that stolon is placed in 30 DEG C of clear water impregnates for 24 hours；
(4) it by the stolon plant to flowerpot after immersion, is placed under 25~35 DEG C of illumination and cultivates.
The present invention can effectively facilitate eremochloa ophiuroides underground part and overground part growth (Fig. 4).Underground part growth parameter(s) such as underground
Portion's dry weight, root/shoot ratio, total root long, root volume, root surface area and average root diameter relatively control increase by 15.40%, 8.26%,
24.35%, 61.60%, 43.53% and 20.41%, overground part growth parameter(s) such as overground part dry weight, panel length (four section),
Relatively control increases by 13.95%, 40.96%, 7.33% and 21.58% respectively for the number of blade and leaf area.
Claims (3)
1. a kind of method of low temperature plasma pretreatment stolon stimulation eremochloa ophiuroides fast-growth, includes the following steps：
（1）It chooses eremochloa ophiuroides stolon and impregnates 18 h in 30~35 DEG C of clear water；
（2）With dielectric impedance helium Low Temperature Plasma Treating stolon, treatment conditions are：Processing power is 150 ~ 450 W, place
The reason time is 10 ~ 20 s, and pole plate spacing is 2 cm, and pressure is 50 ~ 150 Pa, and frequency is 13.56 kHz；
（3）The stolon of Low Temperature Plasma Treating is impregnated into 18 ~ 24 h in 30 DEG C of clear water;
（4）By in the stolon plant to flowerpot after immersion, it is placed under 25 ~ 35 DEG C of illumination and cultivates.
2. the method for low temperature plasma pretreatment stolon stimulation eremochloa ophiuroides fast-growth according to claim 1,
It is characterized in that, step（2）The preferred power of the Low Temperature Plasma Treating is 300 W, and it is 15 s to handle the preferred time.
3. the method that low temperature plasma pretreatment stolon according to claim 1 promotes eremochloa ophiuroides fast-growth,
It is characterized in that, step（3）The soaking time is preferably 20 h.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810059603.7A CN108551912A (en) | 2018-01-22 | 2018-01-22 | A kind of method of Low Temperature Plasma Treating stolon stimulation eremochloa ophiuroides fast-growth |
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| CN201810059603.7A CN108551912A (en) | 2018-01-22 | 2018-01-22 | A kind of method of Low Temperature Plasma Treating stolon stimulation eremochloa ophiuroides fast-growth |
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| CN108551912A true CN108551912A (en) | 2018-09-21 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| PL428464A1 (en) * | 2018-12-31 | 2019-05-06 | Lubelska Polt | Method for stimulation of lignified plants |
| PL428463A1 (en) * | 2018-12-31 | 2019-05-06 | Lubelska Polt | Method for stimulation of semi-lignified and herbacaeous plants |
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| CN1439244A (en) * | 2003-03-20 | 2003-09-03 | 浙江大学 | Culture method for lawn grass with colour leaves |
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| CN104782266A (en) * | 2015-04-02 | 2015-07-22 | 中国科学院南京土壤研究所 | Cold-plasma seed treatment method capable of promoting germination of seeds of grain and oil crops and increasing yield of grain and oil crops |
| CN105028189A (en) * | 2015-06-25 | 2015-11-11 | 中国农业大学 | Chinese wild rye breeding method through cold plasma treatment, and application of method |
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2018
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Patent Citations (5)
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|---|---|---|---|---|
| CN1439244A (en) * | 2003-03-20 | 2003-09-03 | 浙江大学 | Culture method for lawn grass with colour leaves |
| CN101347073A (en) * | 2007-12-28 | 2009-01-21 | 陈平 | Greening lawn with decorated flower and method for establishing light lawn with decorated flowers on roof |
| CN104782266A (en) * | 2015-04-02 | 2015-07-22 | 中国科学院南京土壤研究所 | Cold-plasma seed treatment method capable of promoting germination of seeds of grain and oil crops and increasing yield of grain and oil crops |
| CN105028189A (en) * | 2015-06-25 | 2015-11-11 | 中国农业大学 | Chinese wild rye breeding method through cold plasma treatment, and application of method |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| PL428464A1 (en) * | 2018-12-31 | 2019-05-06 | Lubelska Polt | Method for stimulation of lignified plants |
| PL428463A1 (en) * | 2018-12-31 | 2019-05-06 | Lubelska Polt | Method for stimulation of semi-lignified and herbacaeous plants |
| PL233334B1 (en) * | 2018-12-31 | 2019-09-30 | Lubelska Polt | Method of stimulating woody plants |
| PL234710B1 (en) * | 2018-12-31 | 2020-03-31 | Lubelska Polt | Method for stimulation of semi-lignified and herbacaeous plants |
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