CN108550687A - 一种热电材料及其制备方法 - Google Patents
一种热电材料及其制备方法 Download PDFInfo
- Publication number
- CN108550687A CN108550687A CN201810363874.1A CN201810363874A CN108550687A CN 108550687 A CN108550687 A CN 108550687A CN 201810363874 A CN201810363874 A CN 201810363874A CN 108550687 A CN108550687 A CN 108550687A
- Authority
- CN
- China
- Prior art keywords
- thermoelectric material
- preparation
- polyimide film
- sputtering
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 title claims abstract description 47
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 229920001721 polyimide Polymers 0.000 claims abstract description 26
- 239000012528 membrane Substances 0.000 claims abstract description 12
- 239000002131 composite material Substances 0.000 claims abstract description 10
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 13
- 239000007789 gas Substances 0.000 claims description 11
- 229920005575 poly(amic acid) Polymers 0.000 claims description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 10
- 239000000243 solution Substances 0.000 claims description 10
- 238000004544 sputter deposition Methods 0.000 claims description 9
- 235000019441 ethanol Nutrition 0.000 claims description 8
- 239000007864 aqueous solution Substances 0.000 claims description 5
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 5
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 claims description 5
- 238000010792 warming Methods 0.000 claims description 5
- 235000007164 Oryza sativa Nutrition 0.000 claims description 4
- 235000009566 rice Nutrition 0.000 claims description 4
- 239000002904 solvent Substances 0.000 claims description 4
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 claims description 3
- 150000004985 diamines Chemical class 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- VACCAVUAMIDAGB-UHFFFAOYSA-N sulfamethizole Chemical compound S1C(C)=NN=C1NS(=O)(=O)C1=CC=C(N)C=C1 VACCAVUAMIDAGB-UHFFFAOYSA-N 0.000 claims description 3
- 239000004952 Polyamide Substances 0.000 claims description 2
- 229910000831 Steel Inorganic materials 0.000 claims description 2
- 239000002253 acid Substances 0.000 claims description 2
- 239000000010 aprotic solvent Substances 0.000 claims description 2
- 229920002647 polyamide Polymers 0.000 claims description 2
- 239000010959 steel Substances 0.000 claims description 2
- 240000007594 Oryza sativa Species 0.000 claims 1
- 238000004062 sedimentation Methods 0.000 claims 1
- 238000005477 sputtering target Methods 0.000 claims 1
- 239000013077 target material Substances 0.000 claims 1
- 239000004642 Polyimide Substances 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 11
- 239000000203 mixture Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000011148 porous material Substances 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- -1 4,4 '-diaminodiphenyl ethers Chemical class 0.000 description 3
- MHABMANUFPZXEB-UHFFFAOYSA-N O-demethyl-aloesaponarin I Natural products O=C1C2=CC=CC(O)=C2C(=O)C2=C1C=C(O)C(C(O)=O)=C2C MHABMANUFPZXEB-UHFFFAOYSA-N 0.000 description 3
- 241000209094 Oryza Species 0.000 description 3
- ANSXAPJVJOKRDJ-UHFFFAOYSA-N furo[3,4-f][2]benzofuran-1,3,5,7-tetrone Chemical compound C1=C2C(=O)OC(=O)C2=CC2=C1C(=O)OC2=O ANSXAPJVJOKRDJ-UHFFFAOYSA-N 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 3
- 229910052753 mercury Inorganic materials 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 230000005619 thermoelectricity Effects 0.000 description 3
- 239000002585 base Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 206010013786 Dry skin Diseases 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000002918 waste heat Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/856—Thermoelectric active materials comprising organic compositions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1003—Preparatory processes
- C08G73/1007—Preparatory processes from tetracarboxylic acids or derivatives and diamines
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1067—Wholly aromatic polyimides, i.e. having both tetracarboxylic and diamino moieties aromatically bound
- C08G73/1071—Wholly aromatic polyimides containing oxygen in the form of ether bonds in the main chain
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
- C08J5/18—Manufacture of films or sheets
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2379/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen, or carbon only, not provided for in groups C08J2361/00 - C08J2377/00
- C08J2379/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C08J2379/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Manufacturing & Machinery (AREA)
- Nanotechnology (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Composite Materials (AREA)
- Inorganic Chemistry (AREA)
- Manufacture Of Porous Articles, And Recovery And Treatment Of Waste Products (AREA)
Abstract
本发明公开了一种热电材料及其制造工艺,具体是一种聚酰亚胺多孔膜/Sn2Te3‑xFex热电薄膜复合材料及其制备方法。本发明采用磁控溅射制备纳米级热电材料镶嵌于多孔膜中,热电材料可达纳米尺度,热电系数高。
Description
技术领域
本发明涉及热电材料领域,尤其涉及一种纳米级热电复合材料及其制造工艺。
背景技术
热电效应是指当物体两端温度不同时,物体中的载流子将顺着温度梯度由高温区向低温区扩散,致使低温区的载流子数目逐渐多于高温区,从而产生电势差、建立内建电场。热电材料是一种能够降温差转变为电势差的材料,从而将温差变成一种资源。因此,人们随时随地都有可以利用的电源。与传统发电、制冷设备相比,利用热电效应及其逆效应制成的设备具有取用方便、设备简单、无噪声、无污染等诸多优点。
然而,当前的热电材料普遍存在热电效应弱、电压低的问题,限制了其应用。人们不但研究新材料,来提高热电效应。中国发明专利CN 102557448 A提供了一种仅使希望的结晶选择性地析出的热电转换材料。 在V系玻璃中使 MxV2O5结晶选择性地析出 (M :Fe、Sb、Bi、W、Mo、Mn、Ni、Cu、Ag、碱金属、碱土金属的任一种金属元素,0 < x < 1)。
中国发明专利CN 107737921 A提供了一种热电材料及其制备方法,通过含有Ni2+的化学镀液对Cu2SnSe3热电粉末进行包覆,还原后得到具有Ni镀层的Cu2SnSe3-Ni复合粉体,然后经过压制和两步加热烧结步骤,得到块状热电材料,加工时间短,制备量大,粉体包覆均匀,处理工艺简单,设备成本较低,适合规模化生产,所得热电材料热导率低、电导率高,ZT值有明显提升。
发明内容
发明目的:本发明的目的在于提供一种热点系数高的热电材料及其制造工艺,以推动热电材料的产业化。本发明的目的是提供一种聚酰亚胺/Sn2Te3-xFex热电薄膜复合材料及其制备方法。
本发明的技术方案及具体制备过程如下:
(1)将四酸二酐、有机二胺加入溶剂中,制备聚酰胺酸溶液;所述溶剂为非质子溶液;
(2)在温度为10-40℃、相对湿度为20-80%条件下,将聚酰胺酸溶液真空脱气后,将上述聚酰胺酸溶液涂覆到基材上,然后放置入乙醇的水溶液中;所述基材包含但不限于玻璃、不锈钢;
(3)将多孔膜在温度为200℃以下的环境中干燥;
(4)将上述聚酰胺酸膜的升温到300℃以上的温度亚胺化,得到多孔的聚酰亚胺膜;
(5)将聚酰亚胺膜进行超声清洗。
(6)将清洁处理后的聚酰亚胺膜置于磁控溅射样品室,溅射Sn2Te3-xFex;所用溅射靶材为块体Sn2Te3-xFex,溅射真空度高于1× 10-3Pa,工作气体为0.4~0.8Pa的高纯氩气,样品室温度为100℃~150℃,沉积功率为10~20W,样品支架旋转速度为60~100转/分钟。在溅射过程中,会有大量的Sn2Te3-xFex的晶体生长于薄膜内部,并且其尺寸受薄膜内孔隙的限制。这样能够保证材料的纳米尺度。
其中X的范围为0.05~0.2。
作为优选, 聚酰亚胺膜的孔径小于100纳米,进一步优选为50纳米以下。
作为优选,四酸二酐、有机二胺的比例为1:0.95~0.95:1,进一步优选为1:0.99~0.99:1。
作为优选,聚酰胺酸溶液的固含量为8-20%。
作为优选,聚酰胺酸的黏度控制在500~50000cp范围。
作为优选,聚酰亚胺薄膜的厚度小于20微米。
作为优选,聚酰亚胺表面的Sn2Te3-xFex膜厚小于100纳米。
有益的效果:
1.本发明可以制备纳米级尺寸的热电材料。因为嵌入聚酰亚胺膜内的热电材料的尺度受聚酰亚胺膜的孔限制,很容易做到100纳米以下。热电材料的性能与其晶粒尺寸直接相关。热电材料尺寸的减小,会带来纳米尺度效应,改变了材料费米能级附近的电子能态密度,大大增加材料的Seebeck系数,提高薄膜材料热电性能。
2.聚酰亚胺材料是良好的绝缘材料,使整个复合材料的热电性能相对于纯热电材料有大幅度的提升。并且聚酰亚胺具有优良的耐热性能、机械性能、耐电压性能,非常适合作为热电材料的基底。
3.聚酰亚胺作为载体具备良好的柔性与抗弯折性能,非常适合作为柔性能源材料应用于微型换能器件或传感器领域。
4.由于聚酰亚胺膜的孔径较容易调控,因此可以较容易调控热电材料的尺度。
5.本发明采用Fe掺杂,改变了Sn2Te3材料的能级结果,提高了热电系数。
为了便于理解本发明,下面提供实施例用于解释本发明,但它们不构成对本发明的限定。
具体实施方式
下面通过结合实施例详细描述本发明。
实施例1
(1)将4,4’-二氨基二苯醚和均苯四甲酸二酐以1:1的摩尔比加入到2000毫升DMAC中,固含量13%,在20摄氏度下搅拌反应6小时,得到粘稠状聚酰胺酸溶液混合物,黏度8400cp。
(2)在20摄氏度、相对湿度60%条件下,将混合物真空脱气1小时,将混合物涂覆到不锈钢上,然后放置到乙醇的水溶液中(乙醇体积含量45%),浸泡10分钟,然后在60摄氏度干燥10分钟,然后转到每分钟升温5摄氏度的炉子中,升温到320摄氏度,保温60分钟,得到聚酰亚胺多孔膜。
采用压汞法测量多孔膜的平均孔径为67纳米,孔隙率38%。用厚度仪测得膜厚9微米。
(3)将聚酰亚胺膜进行超声清洗。
(4)将清洁处理后的聚酰亚胺膜置于磁控溅射样品室,溅射Sn2Te2.8Fe0.2;真空度6× 10-4Pa,工作气体为0.6Pa的高纯氩气,样品室温度为120℃,沉积功率为15W,样品支架旋转速度为80转/分钟;当膜厚达到38纳米时,停止溅射。
(5)采用NetzschABA-458仪器测量复合材料的热电系数为623μV/K。
实施例2
(1)将4,4’-二氨基二苯醚和均苯四甲酸二酐以1:1的摩尔比加入到2000毫升DMAC中,固含量19%,在20摄氏度下搅拌反应6小时,得到粘稠状聚酰胺酸溶液混合物,黏度2400cp。
(2)在20摄氏度、相对湿度50%条件下,将混合物真空脱气1小时,将混合物涂覆到不锈钢上,然后放置到乙醇的水溶液中(乙醇体积含量60%),浸泡20分钟,然后在80摄氏度干燥10分钟,然后转到每分钟升温5摄氏度的炉子中,升温到300摄氏度,保温30分钟,得到聚酰亚胺多孔膜。
采用压汞法测量多孔膜的平均孔径为66纳米,孔隙率31%。用厚度仪测得膜厚11微米。
(3)将聚酰亚胺膜进行超声清洗。
(4)将清洁处理后的聚酰亚胺膜置于磁控溅射样品室,溅射Sn2Te2.9Fe0.1;真空度9× 10-4Pa,工作气体为0.8Pa的高纯氩气,样品室温度为150℃,沉积功率为20W,样品支架旋转速度为100转/分钟;当膜厚达到38纳米时,停止溅射。
(5)采用NetzschABA-458仪器测量复合材料的热电系数为621μV/K。
实施例3
(1)将4,4’-二氨基二苯醚和均苯四甲酸二酐以1:1的摩尔比加入到3000毫升DMAC中,固含量8%,在20摄氏度下搅拌反应6小时,得到粘稠状聚酰胺酸溶液混合物,黏度6550cp。
(2)在20摄氏度环境下,将混合物真空脱气1小时,在相对湿度50%条件下,将混合物涂覆到不锈钢上,然后放置到乙醇的水溶液中(乙醇体积含量45%),浸泡20分钟,然后在60摄氏度干燥10分钟,然后转到每分钟升温5摄氏度的炉子中,升温到300摄氏度,保温30分钟,得到聚酰亚胺多孔膜。
采用压汞法测量多孔膜的平均孔径为76纳米,孔隙率47%。用厚度仪测得膜厚6微米。
(3)将聚酰亚胺膜进行超声清洗。
(4)将清洁处理后的聚酰亚胺膜置于磁控溅射样品室,溅射Sn2Te2.95Fe0.05;真空度6× 10-4Pa,工作气体为0.4的高纯氩气,样品室温度为100℃,沉积功率为10W,样品支架旋转速度为60转/分钟;当膜厚达到23纳米时,停止溅射。
(5)采用NetzschABA-458仪器测量复合材料的热电系数为653μV/K。
从实施例可以看出,本发明由采用了多孔膜作为模板,采用磁控溅射制备纳米级的热电复合材料,其热点系数大大高于当前的其他热电材料(一般为100~350μV/K),具有极大的技术突破,可望应用于余热/温差发电。
以上所述仅是本发明实施方式的一些例子,应当指出:对于本技术领域的技术人员来说,在不脱离本发明原理的前提下,还可以做出若干改进和润饰,这些改进和润饰也应视为本发明的保护范围。
Claims (10)
1.一种热电材料,其特征在于:该热电材料是一种复合材料,由聚酰亚胺薄膜与Sn2Te3- xFex构成。
2.一种如权利要求1所述的热电材料,其特征在于:所述聚酰亚胺薄膜为多孔膜。
3.一种如权利要求1所述的热电材料,其特征在于:所述聚酰亚胺薄膜的孔径小于100纳米。
4.一种如权利要求1所述的热电材料,其特征在于:所述聚酰亚胺薄膜厚度小于20微米。
5.一种如权利要求1所述的热电材料,其特征在于:其制备方法包括如下: 将清洁处理后的聚酰亚胺膜置于磁控溅射样品室,所用溅射靶材为块体Sn2Te3-xFex,选择合适的溅射真空度、样品室温度与工作气体进行溅射沉积,沉积功率为10~20W,样品支架旋转速度为60~100转/分钟。
6.一种如权利要求1所述的热电材料,其特征在于:X的范围为0.05~0.2。
7.一种如权利要求1或5所述的热电材料,其特征在于:所述的聚酰亚胺膜的制备方法包括如下步骤:
(1)将四酸二酐、有机二胺加入溶剂中,制备聚酰胺酸溶液;所述溶剂为非质子溶液;
(2)在温度为10-40℃、相对湿度为20-80%条件下,将聚酰胺酸溶液真空脱气后,将上述聚酰胺酸溶液涂覆到基材上,然后放置入乙醇的水溶液中;所述基材包含但不限于玻璃、不锈钢;
(3)将多孔膜在温度为200℃以下的环境中干燥;
(4)将上述聚酰胺酸膜的升温到300℃以上的温度亚胺化,得到多孔的聚酰亚胺膜;
(5)将聚酰亚胺膜进行超声清洗。
8.一种如权利要求5所述的热电材料的制备方法,其特征在于:所述溅射真空度高于1× 10-3Pa。
9.一种如权利要求5所述的热电材料的制备方法,其特征在于:所述工作气体为0.4~0.8Pa的高纯氩气。
10.一种如权利要求5所述的热电材料的制备方法,其特征在于:所述样品室温度为100℃~150℃。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810363874.1A CN108550687A (zh) | 2018-04-22 | 2018-04-22 | 一种热电材料及其制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810363874.1A CN108550687A (zh) | 2018-04-22 | 2018-04-22 | 一种热电材料及其制备方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN108550687A true CN108550687A (zh) | 2018-09-18 |
Family
ID=63512098
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201810363874.1A Pending CN108550687A (zh) | 2018-04-22 | 2018-04-22 | 一种热电材料及其制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN108550687A (zh) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103509186A (zh) * | 2012-06-27 | 2014-01-15 | 比亚迪股份有限公司 | 一种聚酰胺酸溶液、其制备方法、聚酰亚胺溶液、聚酰亚胺多孔膜及锂离子电池 |
CN104701449A (zh) * | 2015-02-13 | 2015-06-10 | 国家电网公司 | 一种柔性热电薄膜器件 |
CN107768512A (zh) * | 2017-10-16 | 2018-03-06 | 四川大学 | 通过Zn掺杂提高SnTe热电性能的方法 |
-
2018
- 2018-04-22 CN CN201810363874.1A patent/CN108550687A/zh active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103509186A (zh) * | 2012-06-27 | 2014-01-15 | 比亚迪股份有限公司 | 一种聚酰胺酸溶液、其制备方法、聚酰亚胺溶液、聚酰亚胺多孔膜及锂离子电池 |
CN104701449A (zh) * | 2015-02-13 | 2015-06-10 | 国家电网公司 | 一种柔性热电薄膜器件 |
CN107768512A (zh) * | 2017-10-16 | 2018-03-06 | 四川大学 | 通过Zn掺杂提高SnTe热电性能的方法 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2019109398A1 (zh) | 一种超薄金属锂复合体及其制备方法和用途 | |
Hatsuta et al. | Effect of thermal annealing on the structural and thermoelectric properties of electrodeposited antimony telluride thin films | |
CN109709160B (zh) | 一种电子导电金属有机框架薄膜及其制备方法和用途 | |
US9997692B2 (en) | Thermoelectric materials | |
TW201042788A (en) | Thermoelectric module with insulated substrate | |
Wada et al. | Fabrication of bismuth telluride nanoplates via solvothermal synthesis using different alkalis and nanoplate thin films by printing method | |
CN104711455B (zh) | 薄膜电阻材料、薄膜电阻及其制备方法 | |
Hu et al. | Nickel nanowire network coating to alleviate interfacial polarization for Na-beta battery applications | |
CN112151671B (zh) | 基于二维金属有机框架薄膜材料的有机自旋阀器件及制备方法 | |
CN108565331A (zh) | 一种热电材料 | |
CN112458420B (zh) | 具有纳米棒阵列的碲化银-硫化银薄膜及其制法 | |
CN108550687A (zh) | 一种热电材料及其制备方法 | |
CN108447973A (zh) | 一种热电材料 | |
CN103555986A (zh) | 一种(Bi0.8Sb0.2)2Te3纳米热电材料的制备方法 | |
CN108503882A (zh) | 一种热电复合材料及其制备方法 | |
CN106555167B (zh) | 制备过渡金属硫族化物的方法 | |
CN115028145B (zh) | 过渡金属掺杂的金属硒化物二维材料及其制备和应用 | |
Chou et al. | Zn2SnO4 thin film for ozone gas sensor developed on MEMS device and synthesized by HiPIMS Co-sputtering | |
JP4457215B2 (ja) | 熱電発電機能を有する管材 | |
CN108539002A (zh) | 一种热电复合材料及其制备方法 | |
Xiaoqiang et al. | Effect of glass powder on performance of copper conductor film prepared via sintering Cu-glass paste | |
CN107299315B (zh) | 一种高绝缘电阻二氧化硅薄膜材料及其制备方法 | |
CN103498190B (zh) | 高纯度枝状结晶FeWO4/FeS核壳纳米结构的制备方法 | |
CN112376028A (zh) | 一种Sn掺杂Ge2Sb2Te5热电薄膜及其制备方法 | |
CN113122809B (zh) | 采用真空蒸发镀膜可控制备非晶柔性Bi-Te-Se膜的方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180918 |
|
RJ01 | Rejection of invention patent application after publication |