CN108546089A - 一种ntc热敏电阻器的制备工艺 - Google Patents
一种ntc热敏电阻器的制备工艺 Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000010438 heat treatment Methods 0.000 claims abstract description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052593 corundum Inorganic materials 0.000 claims abstract description 6
- 229910001845 yogo sapphire Inorganic materials 0.000 claims abstract description 6
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 5
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 5
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 5
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 5
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 5
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 8
- 239000000843 powder Substances 0.000 claims description 8
- 239000000919 ceramic Substances 0.000 claims description 6
- 229910002480 Cu-O Inorganic materials 0.000 claims description 5
- 238000000498 ball milling Methods 0.000 claims description 3
- 238000009826 distribution Methods 0.000 claims description 3
- 238000005469 granulation Methods 0.000 claims description 3
- 230000003179 granulation Effects 0.000 claims description 3
- 238000000227 grinding Methods 0.000 claims description 3
- 239000003595 mist Substances 0.000 claims description 3
- 238000005245 sintering Methods 0.000 claims description 3
- 238000012360 testing method Methods 0.000 claims description 3
- 238000002791 soaking Methods 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 4
- 238000012986 modification Methods 0.000 abstract description 3
- 230000004048 modification Effects 0.000 abstract description 3
- 238000005457 optimization Methods 0.000 abstract description 3
- 229910044991 metal oxide Inorganic materials 0.000 abstract description 2
- 150000004706 metal oxides Chemical class 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 5
- 239000011805 ball Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- ATRRKUHOCOJYRX-UHFFFAOYSA-N Ammonium bicarbonate Chemical compound [NH4+].OC([O-])=O ATRRKUHOCOJYRX-UHFFFAOYSA-N 0.000 description 1
- 229910000013 Ammonium bicarbonate Inorganic materials 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 235000012538 ammonium bicarbonate Nutrition 0.000 description 1
- 239000001099 ammonium carbonate Substances 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- UBEWDCMIDFGDOO-UHFFFAOYSA-N cobalt(II,III) oxide Inorganic materials [O-2].[O-2].[O-2].[O-2].[Co+2].[Co+3].[Co+3] UBEWDCMIDFGDOO-UHFFFAOYSA-N 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000002003 electrode paste Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- AMWRITDGCCNYAT-UHFFFAOYSA-L manganese oxide Inorganic materials [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 1
- MIVBAHRSNUNMPP-UHFFFAOYSA-N manganese(2+);dinitrate Chemical compound [Mn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MIVBAHRSNUNMPP-UHFFFAOYSA-N 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N nickel(II) oxide Inorganic materials [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- KBJMLQFLOWQJNF-UHFFFAOYSA-N nickel(ii) nitrate Chemical compound [Ni+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O KBJMLQFLOWQJNF-UHFFFAOYSA-N 0.000 description 1
- OQUOOEBLAKQCOP-UHFFFAOYSA-N nitric acid;hexahydrate Chemical compound O.O.O.O.O.O.O[N+]([O-])=O OQUOOEBLAKQCOP-UHFFFAOYSA-N 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 238000007873 sieving Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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Abstract
本发明公开了一种NTC热敏电阻器的制备工艺;本发明主要解决目前抑制浪涌电流用NTC热敏电阻器热稳定性差,可靠性低的缺点。通过本发明技术的应用,能显著改善热敏电阻的对热稳定性,通过工艺优化,能缩短产品的加工周期(可以取消传统热敏电阻器的热处理工序,节约48~120h的时间),降低产品的成本,提升产品的市场竞争力。本发明在Mn‑Ni‑Cu‑O配方中添加一定比例的ZnO、ZrO2、SiO2、Al2O3等金属元素氧化物,能降低产品的电阻率,通过添杂对原有配方体系进行配方改性,达到改善产品表面形貌,增加热敏电阻本体的对热稳定性。
Description
技术领域
本发明涉及热敏电阻器的制备领域,具体讲是一种NTC热敏电阻器的制备工艺。
背景技术
随着现代工业及电子行业的快速发展,市场对热敏电阻电子元器件德需求越来越高,抑制浪涌电流用NTC(Negative Temperature Coefficient)热敏电阻器适用于转换电源、开关电源、UPS电源、各类电加热器、电子节能灯、电子镇流器、各种电子装置电源电路的保护以及各类显像管、显示器、白炽灯及其它照明灯具的灯丝保护。随着现代工业及电子行业的快速发展,对电子元器件也相应地提出了更高的要求。
经过检索发现,专利号CN201410407801.X的发明公开了一种NTC热敏电阻材料及其制备方法与NTC热敏电阻器及其制备方法。该NTC热敏电阻材料的化学通式为CuxMn2-yCoyO4-zRuO2,其中,x、y和z均表示摩尔量,1≤x≤1.3,0.3≤y≤0.7,0。
专利号CN201410598275.X 的发明公开了一种热敏电阻器的制备方法,属于电子元件的制备领域。将Mn3O4、Co3O4、NiO、Fe2O3混合成粉料;将锆球、粉料和去离子水进行混料和行星球磨,在1000℃的箱式炉中预烧,经过筛网过筛制得所需粉体;将NTCR粉体直接通过冷等静压机压成坯体;采用Al2O3粉埋烧,在箱式炉中烧结成瓷,通过切割机切割成厚度为0.3mm的薄片,涂覆银电极浆料,在850℃的炉中烧渗、再经过划片机划片,制成芯片;在芯片电极上焊接引脚后制得电阻器。通过采用固相反应法制作NTC热敏电阻器芯片,制出一种新型薄膜封装型NTC热敏电阻器。
专利号CN200610122800.6 的发明公开一种高可靠性NTC热敏电阻器及其制备方法,本NTC热敏电阻器主要由芯片、覆盖在芯片周围的玻壳和引线组成,芯片的两面涂覆有金属电极,引线的一端固定在金属电极上。其特征是芯片材料的主要组成为:六水合硝酸钴20%~24%;50%硝酸锰溶液20%~24%;硝酸镍14%~18%;碳酸氢铵26%~30%;氨水10%~12%。本NTC热敏电阻器根据芯片材料组成的最佳配比,其25℃电阻值年漂移率小于0.1%。
经过分析发现,在现有传统NTC热敏电阻器采用Mn-Ni-Cu-O配方体系制备,该配方体系的缺点是:1.热稳定性差,高温储存变化率大;2现有方式可靠性低,最大稳态电流实验失效率高。
导致该现象的原因是该配方体系采用三元配方体系,在经过高温烧结后产品表面易形成玻璃釉导致产品结构不稳定。
发明内容
因此,为了解决上述不足,本发明在此提供一种NTC热敏电阻器的制备工艺;本专利主要解决目前抑制浪涌电流用NTC热稳定性差,可靠性低的缺点。
本发明是这样实现的,构造一种NTC热敏电阻器的制备工艺,其特征在于:按照如下方式进行;
步骤1、配料:将ZnO、ZrO2、SiO2、Al2O3中的至少两种以上的氧化物按化学计量比0.2-3.0%加入到Mn-Ni-Cu-O配方中,按试验配方进行称量;
步骤2、将重量相对较小的氧化物种类按多少多的原则依次加入到球磨设备进行加工,粒度达到D50≤1μm要求后取出;
步骤3、将球磨完成的粉料进行喷雾造粒,造粒后的粒度分布在200~300目,含水率≤0.8%,完成后采用复压旋转压机进行压片;
步骤4、将压制完成的陶瓷坯体进行一次预烧;按照升温速度每分钟不大于5摄氏度的升温速度进行预烧;
将预烧结完成的陶瓷坯体在1050-1200℃的条件下进行二次烧结,保温2-4小时。
本发明具有如下优点:通过本专利技术的应用,能显著改善热敏电阻的对热稳定性,通过工艺优化,能缩短产品的加工周期(可以取消传统热敏电阻器的热处理工序,节约48~120h的时间),降低产品的成本,提升产品的市场竞争力。本发明在Mn-Ni-Cu-O配方中添加一定比例的ZnO、ZrO2、SiO2、Al2O3等金属元素氧化物,能降低产品的电阻率,通过添杂对原有配方体系进行配方改性,达到改善产品表面形貌,增加热敏电阻本体的对热稳定性。
具体实施方式
下面将对本发明进行详细说明,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
本发明通过改进在此提供一种NTC热敏电阻器的制备工艺,按照如下方式进行;
步骤1、配料:将ZnO、ZrO2、SiO2、Al2O3中的至少两种以上的氧化物按化学计量比0.2-3.0%加入到Mn-Ni-Cu-O配方中,按试验配方进行称量;
步骤2、将重量相对较小的氧化物种类按多少多的原则依次加入到球磨设备进行加工,粒度达到D50≤1μm要求后取出;
步骤3、将球磨完成的粉料进行喷雾造粒,造粒后的粒度分布在200~300目,含水率≤0.8%,完成后采用复压旋转压机进行压片;
步骤4、将压制完成的陶瓷坯体进行一次预烧;按照升温速度每分钟不大于5摄氏度的升温速度进行预烧;
将预烧结完成的陶瓷坯体在1050-1200℃,保温2-4小时。
本发明的优点在于:通过本专利技术的应用,能显著改善热敏电阻的对热稳定性,通过工艺优化,能缩短产品的加工周期(可以取消传统热敏电阻器的热处理工序,节约48~120h的时间),降低产品的成本,提升产品的市场竞争力。
对所公开的实施例的上述说明,使本领域专业技术人员能够实现或使用本发明。对这些实施例的多种修改对本领域的专业技术人员来说将是显而易见的,本文中所定义的一般原理可以在不脱离本发明的精神或范围的情况下,在其它实施例中实现。因此,本发明将不会被限制于本文所示的这些实施例,而是要符合与本文所公开的原理和新颖特点相一致的最宽的范围。
Claims (1)
1.一种NTC热敏电阻器的制备工艺,其特征在于:按照如下方式进行;
步骤1、配料:将ZnO、ZrO2、SiO2、Al2O3中的至少两种以上的氧化物按化学计量比0.2-3.0%加入到Mn-Ni-Cu-O配方中,按试验配方进行称量;
步骤2、将重量相对较小的氧化物种类按多少多的原则依次加入到球磨设备进行加工,粒度达到D50≤1μm要求后取出;
步骤3、将球磨完成的粉料进行喷雾造粒,造粒后的粒度分布在200~300目,含水率≤0.8%,完成后采用复压旋转压机进行压片;
步骤4、将压制完成的陶瓷坯体进行一次预烧;按照升温速度每分钟不大于5摄氏度的升温速度进行预烧;
将预烧结完成的陶瓷坯体在1050-1200℃的条件下进行二次烧结,保温时间为2~4小时。
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109133901A (zh) * | 2018-10-29 | 2019-01-04 | 惠州嘉科实业有限公司 | 含铁系热敏电阻及其制备方法 |
CN109265157A (zh) * | 2018-10-29 | 2019-01-25 | 惠州嘉科实业有限公司 | 低阻ntc热敏电阻及其制备方法 |
CN112390640A (zh) * | 2020-11-13 | 2021-02-23 | 深圳顺络电子股份有限公司 | 一种ntc热敏电阻器及其制作方法 |
CN114455939A (zh) * | 2022-01-07 | 2022-05-10 | 广东风华高新科技股份有限公司 | 一种高阻值高b值的ntc热敏电阻材料及其制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101127266A (zh) * | 2007-09-12 | 2008-02-20 | 山东中厦电子科技有限公司 | 高均匀性负温度系数热敏电阻材料及其制备方法 |
CN101425352A (zh) * | 2008-11-11 | 2009-05-06 | 南京时恒电子科技有限公司 | 提高ntc热敏电阻器稳定性的工艺方法 |
CN103183508A (zh) * | 2013-03-12 | 2013-07-03 | 上海工程技术大学 | Ntc热敏电阻材料及制备方法和在电子器件中的应用 |
-
2018
- 2018-03-30 CN CN201810286968.3A patent/CN108546089A/zh active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101127266A (zh) * | 2007-09-12 | 2008-02-20 | 山东中厦电子科技有限公司 | 高均匀性负温度系数热敏电阻材料及其制备方法 |
CN101425352A (zh) * | 2008-11-11 | 2009-05-06 | 南京时恒电子科技有限公司 | 提高ntc热敏电阻器稳定性的工艺方法 |
CN103183508A (zh) * | 2013-03-12 | 2013-07-03 | 上海工程技术大学 | Ntc热敏电阻材料及制备方法和在电子器件中的应用 |
Non-Patent Citations (1)
Title |
---|
陈东州: "抑制浪涌电流用负温度系数热敏电阻器的研究", 《中国优秀硕士学位论文全文数据库 工程科技Ⅱ辑》 * |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109133901A (zh) * | 2018-10-29 | 2019-01-04 | 惠州嘉科实业有限公司 | 含铁系热敏电阻及其制备方法 |
CN109265157A (zh) * | 2018-10-29 | 2019-01-25 | 惠州嘉科实业有限公司 | 低阻ntc热敏电阻及其制备方法 |
CN109265157B (zh) * | 2018-10-29 | 2022-01-21 | 惠州嘉科实业有限公司 | 具有v型引脚的低阻ntc热敏电阻及其制备方法 |
CN112390640A (zh) * | 2020-11-13 | 2021-02-23 | 深圳顺络电子股份有限公司 | 一种ntc热敏电阻器及其制作方法 |
CN114455939A (zh) * | 2022-01-07 | 2022-05-10 | 广东风华高新科技股份有限公司 | 一种高阻值高b值的ntc热敏电阻材料及其制备方法 |
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