CN108541339A - 金属配线修复方法 - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 38
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
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- 229910052682 stishovite Inorganic materials 0.000 claims description 4
- 229910052905 tridymite Inorganic materials 0.000 claims description 4
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Abstract
本发明是涉及一种金属配线修复方法,使短路的金属配线具有均匀和优秀的电性特性,其步骤包括:第一步骤,将损伤的金属配线之间,由第一排出单元形成第一绝缘膜;第二步骤,在所述第一绝缘膜的上部形成由第二排出单元连接所述损伤的金属配线的修复金属层;第三步骤,由所述第一排出单元在所述修复金属层上部形成第二绝缘膜。
Description
技术领域
本发明涉及半导体、显示器等的金属配线修复方法。
背景技术
在半导体或显示器生产工艺中,由于细微线宽金属配线发展为更细密且分辨率高的工艺,进而所产生的阻抗问题,具有配线的高度变高的趋势。
但是,当为了解决配线的短路等问题适用金属层的修复工艺时,因变高的配线段差,发生修复的金属层断开或者密度降低的问题。
如图1所示,可知将短路的金属配线10由排出单元40形成修复金属层30时,因高段差在金属层之间生成空隙V。现有的显示器配线具有如下问题:通常是4至8um线宽水准,但在生产高分辨率面板过程中变更为2-3um配线,进而随着配线的高度从2000至3000A提高至5000至8000A水准,当形成用于修理(短路连接)的修复金属层30时,在段差(stepcoverage)发生部分膜的厚度薄或者产生空隙(void)。
这些薄膜和空隙V使得修复的金属层30具有高的阻抗值,或者产生裂痕(crack),进而成为修复金属层30断开的不良因素的同时,成为不均匀的电特性的原因。
发明内容
(要解决的课题)
本发明是为了解决上述的问题,其目的在于在损伤的金属配线之间形成绝缘层,减少段差,进而防止修复金属层的短路。此外,通过在所述修复金属层上形成附加绝缘膜来保护修复金属层。
(解决课题的方法)
为了解决所述目的,本发明的金属配线修复方法,其步骤包括:第一步骤,将损伤的金属配线之间,由第一排出单元形成第一绝缘膜;第二步骤,在所述第一绝缘膜的上部形成由第二排出单元连接所述损伤的金属配线的修复金属层;第三步骤,由所述第一排出单元在所述修复金属层上部形成第二绝缘膜。
作为一个实施例,所述第一绝缘膜及第二绝缘膜可以包括氮化物、氧化物及氮氧化物中选择的任何一个以上。
作为另一个实施例,所述氮化物可以是Si3N4。
作为其他一个实施例,所述氧化物可以是SiO2。
作为其他一个实施例,所述氮氧化物可以是Si(N,O)x。
作为其他一个实施例,所述修复金属层可以由包括Ag、Cu、Au中选择的任何一个以上的金属微粒的墨形成。
作为其他一个实施例,所述第一绝缘膜及第二绝缘膜可以由涂抹且硬化墨形成,所述硬化由激光灯形成。
作为其他一个实施例,所述修复金属层可以由电流体(EHD)喷墨装置形成。
作为其他一个实施例,所述修复金属层由激光化学气相沉积(LASER CVD)装置形成。
作为其他一个实施例,损伤的金属配线的厚度可以是2000至8000A。
作为其他一个实施例,形成在所述损伤的金属配线之间的所述第一绝缘膜及所述修复金属层的合计厚度,可以小于所述金属配线的厚度。
作为其他一个实施例,第一绝缘膜及第二绝缘膜由EHD喷墨印刷法形成。
(发明效果)
本发明的优点在于,在损伤的金属配线之间形成绝缘膜,来减少损伤的金属配线的段差,可以防止修复金属层的短路及空隙生成。
此外,所述绝缘膜具有如下效果:起到平坦化作用,使得修复金属层的均匀形成成为可能,进而由于这种均匀性使之具有均匀的电特性。
此外,通过在所述修复金属层上形成附加绝缘膜,可以由外部环境保护修复金属层,进而可以提高耐久性。
附图说明
图1是示出说明现有问题点的图。
图2至图4是示出按步骤说明本发明一个实施例的金属配线修复方法的模拟图。
具体实施方式
本发明可以具有多种变换,且可以具有多个实施例,现将特定实施例作为附图示出并进行详细地说明。但是,本发明不限定于特定的实施形态,应该理解为包括所有包含在本发明的思想及技术范围的所有变换、均等物至代替物。在说明本发明时,当判断关于公知技术的具体说明可以模糊本发明的要点时,省略其详细说明。
在本申请使用的用语只是用于说明特定的实施例,其意图不是限定本发明。单数的表现只要是从文字内容上没有明确的表示其他意思,就包括复数表现。在本申请中,“其特征在于”、“包括”或者“具有”等用语,意在指定在说明书上记载的特征、数字、步骤、动作、构成要素、部件或者这些组合的存在,应该理解为并不是预先排除一个或其以上的其他特征或者数字、步骤、动作、构成要素、部件或者这些组合的存在或者附加可能性。
以下,参照附图详细地说明本发明的优选实施例。只是,在对本发明进行说明时,为了明确本发明的要点,对已经公开的功能或者构成的说明给予省略。
图2至图4是示出按步骤说明本发明一个实施例的金属配线修复方法的模拟图,参照此说明本发明的金属配线修复方法。
本发明的金属配线修复方法,其步骤包括:第一步骤,将损伤的金属配线100之间,由第一排出单元400形成第一绝缘膜200;第二步骤,在所述第一绝缘膜200的上部形成由第二排出单元410连接所述损伤的金属配线100的修复金属层300;第三步骤,由所述第一排出单元400在所述修复金属层300上部形成第二绝缘膜210。
本发明的金属配线修复方法的第一步骤如图2所示,由第一排出单元400在损伤的金属配线100之间,形成第一绝缘膜200。其中,金属配线100可以是各种电子仪器的金属配线。特别的,可以是配线宽度小而配线高度变高的适用于半导体或显示器的金属配线100。金属配线100通常形成在玻璃或者高分子基板S上,但不一定限定于此。
所述第一绝缘膜200可以适用电性绝缘材料的任何材料。优选的,可以包括氮化物、氧化物及氮氧化物中选择的任何一个以上。所述氮化物、氧化物及氮氧化物,便于形成高粘度的绝缘墨,这些高粘度的绝缘膜的优点在于,便于修复金属层300的均匀形成的平坦化作业。更加优选的,所述氮化物可以是Si3N4,所述氧化物可以是SiO2,所述氮氧化物可以是Si(N,O)x。
所述第一排出单元400作为排出第一绝缘膜材料的装置,可以适用任何的装置、方法。优选的,可以适用喷墨印刷法,更加优选的,可以由电流体(Electrohydrodynamic,EHD)喷墨印刷法形成。即,施加具有一定周期的电脉冲(Electric Pulse)涂抹墨进而形成。由这些EHD喷墨印刷法形成第一绝缘膜400,其优点在于可以形成精密且均匀的绝缘膜。由喷墨印刷法形成的第一绝缘膜400由于使用墨状态材料,所以要经过硬化过程。硬化方法可以适用多种方法,优选的,从包括氮化物、氧化物或者氮氧化物的墨的第一绝缘膜400的耐久性及生产性侧面考虑,适用激光灯进行硬化。
图3是示出本发明第二步骤的形成修复金属层300的图,可以由第二排出单元410形成在所述第一绝缘膜200的上部。即,可以由与第一排出单元400不同的第二排出单元410形成修复金属层。如图3所示,从通电性及耐久性的侧面考虑,优选的,跨在第一绝缘膜200及损伤的金属配线100上形成。如此,第一绝缘膜200在损伤的(短路的)金属配线100之间形成平坦化膜,进而可以形成均匀并且段差小的修复金属层300。
所述修复金属层400可以由包括Ag、Cu、Au中选择的任何一个以上的金属微粒的墨形成。即,可以适用导电性墨。金属微粒可以适用球形、柱形、板状形等多种形状的微粒,可以适用金属被覆盖的核心(core)形状或者两种以上的金属粒子。
这些修复金属层400可以由多种装置的适用形成。优选的,可以由EHD喷墨印刷装置或者LASER CVD装置形成。EHD喷墨印刷装置或LASER CVD装置,从修复金属层400的均匀性及耐久性侧面考虑,具有有效的优点。
如图3所示,所述第一绝缘膜200及所述修复金属层300的合计厚度,可以小于损伤的金属配线100的厚度。如此,通过形成为低于金属配线100来提高与金属配线100的接触面积,可以提高修复金属层300的通电性,并且使之具有低阻抗值的效果。此外,具有段差地被形成,具有可以提高由外部环境的物理要素的耐久性的优点。所述损伤的金属配线100的厚度可以具有2000至8000A,第一绝缘膜200及所述修复金属层300的合计厚度,可以具有1500至7000A的范围。此外,可以由相同条件、相同厚度形成第一绝缘膜200和修复金属层300,并且可以通过这种条件的统一性提高生产性。
图4是示出本发明的形成第二绝缘膜210的第三步骤。参照图4,在所述修复金属层300上部,可以由第一排出单元400形成第二绝缘膜210。即,可以由形成所述第一绝缘膜200的第一排出单元400形成第二绝缘膜210。其优点在于,通过与第一绝缘膜200的形成条件相同的条件,由第一排出单元200形成第二绝缘膜210,可以提高生产性。
第二绝缘膜210可以是与第一绝缘膜200的形成材料相同的材料。即,优选的,可以包括氮化物、氧化物及氮氧化物中选择的任何一个以上,更加优选的,所述氮化物可以是Si3N4,所述氧化物可以是SiO2,所述氮氧化物可以是Si(N,O)x。使用这些高粘度的绝缘墨,其优点在于,可以形成均匀的第二绝缘膜210,耐久性被提高使得保护修复金属层300的功能提高。
此外,与第一绝缘膜200相同,优选的,第二绝缘膜210可以适用喷墨印刷法,更加有选的,可以适用电流体(Electrohydrodynamic,EHD)喷墨印刷法形成。由这些EHD喷墨印刷法形成第二绝缘膜210,其优点在于可以形成精密且均匀的绝缘膜。此外,被涂的第二绝缘膜210可以适用激光灯进行硬化。
如图4所示,第二绝缘膜210可以形成为覆盖修复金属层300的全面。通过形成为像这样可以覆盖全面,经外部的化学、物理要素保护修复金属层300,进而可以提高修复的金属配线整体的耐久性。第二绝缘膜210的厚度可以相同或薄于第一绝缘膜200的厚度。这样的第二绝缘膜210的厚度,可以根据适用的电子仪器的特性而变更。只是,从生产性的侧面考虑,优选的,以与第一绝缘膜200相同的条件具有相同的厚度。
综上所述,本发明由具体地构成要素等特定事项和限定的实施例及图进行了说明,但这仅供于便于本发明的整体理解,本发明不限定于所述实施例,只要是本发明所属领域的技术人员可以从这些记载进行多种修改及变形。因此,本发明的思想不能局限于所进行说明的实施例,不仅是后述的权利要求范围,而且与此权利要求范围均等或等价变形的所有,都属于本发明的思想范围。
Claims (12)
1.一种金属配线修复方法,其特征在于,包括:
第一步骤,将损伤的金属配线之间,由第一排出单元形成第一绝缘膜;
第二步骤,在所述第一绝缘膜的上部形成由第二排出单元连接所述损伤的金属配线的修复金属层;
第三步骤,由所述第一排出单元在所述修复金属层上部形成第二绝缘膜。
2.根据权利要求1所述的金属配线修复方法,其特征在于,
所述第一绝缘膜及第二绝缘膜包括氮化物、氧化物及氮氧化物中选择的任何一个以上。
3.根据权利要求2所述的金属配线修复方法,其特征在于,
所述氮化物是Si3N4。
4.根据权利要求2所述的金属配线修复方法,其特征在于,
所述氧化物是SiO2。
5.根据权利要求2所述的金属配线修复方法,利用喷墨印刷法,其特征在于,
所述氮氧化物是Si(N,O)x。
6.根据权利要求1所述的金属配线修复方法,其特征在于,
所述修复金属层由包括Ag、Cu、Au中选择的任何一个以上的金属微粒的墨形成。
7.根据权利要求1所述的金属配线修复方法,其特征在于,
所述第一绝缘膜及第二绝缘膜由涂抹且硬化墨形成,所述硬化由激光灯形成。
8.根据权利要求1所述的金属配线修复方法,其特征在于,
所述修复金属层由电流体喷墨装置形成。
9.根据权利要求1所述的金属配线修复方法,其特征在于,
所述修复金属层由激光化学气相沉积装置形成。
10.根据权利要求1所述的金属配线修复方法,其特征在于,
损伤的金属配线的厚度是2000至8000A。
11.根据权利要求10所述的金属配线修复方法,其特征在于,
形成在所述损伤的金属配线之间的所述第一绝缘膜及所述修复金属层的合计厚度,小于所述金属配线的厚度。
12.根据权利要求1所述的金属配线修复方法,其特征在于,
第一绝缘膜及第二绝缘膜由电流体喷墨印刷法形成。
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03215941A (ja) * | 1990-01-22 | 1991-09-20 | Hitachi Ltd | 半導体装置並びに絶縁膜形成方法及びその装置 |
JPH06268075A (ja) * | 1993-03-16 | 1994-09-22 | Kawasaki Steel Corp | 多層配線構造の半導体装置及びその製造方法 |
CN102576678A (zh) * | 2010-05-12 | 2012-07-11 | 松下电器产业株式会社 | 柔性半导体装置及其制造方法 |
CN103293719A (zh) * | 2012-02-27 | 2013-09-11 | 欧姆龙株式会社 | 激光加工装置及激光加工方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0945683A (ja) * | 1995-07-27 | 1997-02-14 | Hitachi Ltd | 配線修正方法 |
KR101055507B1 (ko) * | 2009-04-09 | 2011-08-08 | 삼성전기주식회사 | 패턴부의 리페어 구조 및 리페어 방법 |
KR20110101000A (ko) * | 2010-03-05 | 2011-09-15 | 엘지디스플레이 주식회사 | 액정표시장치의 레이저 리페어방법 |
KR101692007B1 (ko) * | 2010-09-15 | 2017-01-04 | 엘지디스플레이 주식회사 | 유기전계 발광소자의 제조방법 |
KR101154588B1 (ko) * | 2010-11-03 | 2012-06-08 | 엘지이노텍 주식회사 | 인쇄회로기판 및 이의 제조 방법 |
JP2012199404A (ja) * | 2011-03-22 | 2012-10-18 | Ntn Corp | パターン修正方法 |
KR102135275B1 (ko) * | 2013-07-29 | 2020-07-20 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판, 이의 제조 방법 및 이를 포함하는 표시 장치 |
KR102083406B1 (ko) * | 2013-11-14 | 2020-03-02 | 엘지디스플레이 주식회사 | 표시패널의 리페어 방법 및 리페어 장치 |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03215941A (ja) * | 1990-01-22 | 1991-09-20 | Hitachi Ltd | 半導体装置並びに絶縁膜形成方法及びその装置 |
JPH06268075A (ja) * | 1993-03-16 | 1994-09-22 | Kawasaki Steel Corp | 多層配線構造の半導体装置及びその製造方法 |
CN102576678A (zh) * | 2010-05-12 | 2012-07-11 | 松下电器产业株式会社 | 柔性半导体装置及其制造方法 |
CN103293719A (zh) * | 2012-02-27 | 2013-09-11 | 欧姆龙株式会社 | 激光加工装置及激光加工方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109375395A (zh) * | 2018-11-20 | 2019-02-22 | 深圳市华星光电技术有限公司 | 断线修复方法 |
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