CN108475634B - 用于等离子体室的可变图案分离网格 - Google Patents
用于等离子体室的可变图案分离网格 Download PDFInfo
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- CN108475634B CN108475634B CN201780006126.1A CN201780006126A CN108475634B CN 108475634 B CN108475634 B CN 108475634B CN 201780006126 A CN201780006126 A CN 201780006126A CN 108475634 B CN108475634 B CN 108475634B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32651—Shields, e.g. dark space shields, Faraday shields
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
- H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Abstract
Description
Claims (12)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201662279162P | 2016-01-15 | 2016-01-15 | |
US62/279,162 | 2016-01-15 | ||
PCT/US2017/012940 WO2017123589A1 (en) | 2016-01-15 | 2017-01-11 | Variable pattern separation grid for plasma chamber |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108475634A CN108475634A (zh) | 2018-08-31 |
CN108475634B true CN108475634B (zh) | 2022-08-12 |
Family
ID=59311672
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201780006126.1A Active CN108475634B (zh) | 2016-01-15 | 2017-01-11 | 用于等离子体室的可变图案分离网格 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20170207077A1 (zh) |
JP (2) | JP7166921B2 (zh) |
KR (1) | KR102227879B1 (zh) |
CN (1) | CN108475634B (zh) |
TW (1) | TWI748980B (zh) |
WO (1) | WO2017123589A1 (zh) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11694911B2 (en) * | 2016-12-20 | 2023-07-04 | Lam Research Corporation | Systems and methods for metastable activated radical selective strip and etch using dual plenum showerhead |
US11201036B2 (en) | 2017-06-09 | 2021-12-14 | Beijing E-Town Semiconductor Technology Co., Ltd | Plasma strip tool with uniformity control |
US10790119B2 (en) | 2017-06-09 | 2020-09-29 | Mattson Technology, Inc | Plasma processing apparatus with post plasma gas injection |
US20190131112A1 (en) * | 2017-10-30 | 2019-05-02 | Mattson Technology, Inc. | Inductively Coupled Plasma Wafer Bevel Strip Apparatus |
WO2020131989A1 (en) * | 2018-12-21 | 2020-06-25 | Mattson Technology, Inc. | Surface smoothing of workpieces |
US11039527B2 (en) * | 2019-01-28 | 2021-06-15 | Mattson Technology, Inc. | Air leak detection in plasma processing apparatus with separation grid |
GB201904587D0 (en) | 2019-04-02 | 2019-05-15 | Oxford Instruments Nanotechnology Tools Ltd | Surface processing apparatus |
US11348784B2 (en) * | 2019-08-12 | 2022-05-31 | Beijing E-Town Semiconductor Technology Co., Ltd | Enhanced ignition in inductively coupled plasmas for workpiece processing |
JP7404119B2 (ja) * | 2020-03-19 | 2023-12-25 | 住友重機械工業株式会社 | 負イオン生成装置 |
CN114724914A (zh) * | 2021-01-04 | 2022-07-08 | 江苏鲁汶仪器有限公司 | 一种等离子体密度控制系统及方法 |
CN116798844B (zh) * | 2023-08-29 | 2023-11-10 | 江苏鹏举半导体设备技术有限公司 | 离子发生装置及粒子移除方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103053012A (zh) * | 2010-08-04 | 2013-04-17 | 朗姆研究公司 | 具有双轴向气体注入和排放的等离子体处理室 |
CN104103477A (zh) * | 2013-04-05 | 2014-10-15 | 朗姆研究公司 | 用于半导体制造的内部等离子体格栅 |
JP2015119177A (ja) * | 2013-12-16 | 2015-06-25 | ピーエスケー・インコーポレーテッド | バッフルアセンブリー及びこれを有する基板処理装置 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS62146268A (ja) * | 1985-12-20 | 1987-06-30 | Anelva Corp | 薄膜製造装置 |
JP3317209B2 (ja) * | 1997-08-12 | 2002-08-26 | 東京エレクトロンエイ・ティー株式会社 | プラズマ処理装置及びプラズマ処理方法 |
US6348688B1 (en) * | 1998-02-06 | 2002-02-19 | Perseptive Biosystems | Tandem time-of-flight mass spectrometer with delayed extraction and method for use |
KR100663351B1 (ko) * | 2004-11-12 | 2007-01-02 | 삼성전자주식회사 | 플라즈마 처리장치 |
KR100698614B1 (ko) | 2005-07-29 | 2007-03-22 | 삼성전자주식회사 | 플라즈마 가속장치 및 그것을 구비하는 플라즈마 처리시스템 |
US20080178805A1 (en) * | 2006-12-05 | 2008-07-31 | Applied Materials, Inc. | Mid-chamber gas distribution plate, tuned plasma flow control grid and electrode |
US20110186748A1 (en) * | 2008-08-15 | 2011-08-04 | John Ruffell | Systems And Methods For Scanning A Beam Of Charged Particles |
US8749053B2 (en) | 2009-06-23 | 2014-06-10 | Intevac, Inc. | Plasma grid implant system for use in solar cell fabrications |
KR20110062534A (ko) * | 2009-12-03 | 2011-06-10 | 세메스 주식회사 | 플라즈마 처리 장치 |
US9793126B2 (en) * | 2010-08-04 | 2017-10-17 | Lam Research Corporation | Ion to neutral control for wafer processing with dual plasma source reactor |
JP5685094B2 (ja) * | 2011-01-25 | 2015-03-18 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
US9384949B2 (en) | 2014-08-08 | 2016-07-05 | Taiwan Semiconductor Manufacturing Co., Ltd | Gas-flow control method for plasma apparatus |
-
2017
- 2017-01-11 US US15/403,455 patent/US20170207077A1/en not_active Abandoned
- 2017-01-11 CN CN201780006126.1A patent/CN108475634B/zh active Active
- 2017-01-11 WO PCT/US2017/012940 patent/WO2017123589A1/en active Application Filing
- 2017-01-11 JP JP2018536861A patent/JP7166921B2/ja active Active
- 2017-01-11 KR KR1020187020121A patent/KR102227879B1/ko active IP Right Grant
- 2017-01-13 TW TW106101237A patent/TWI748980B/zh active
-
2021
- 2021-11-05 JP JP2021181198A patent/JP7250889B2/ja active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103053012A (zh) * | 2010-08-04 | 2013-04-17 | 朗姆研究公司 | 具有双轴向气体注入和排放的等离子体处理室 |
CN104103477A (zh) * | 2013-04-05 | 2014-10-15 | 朗姆研究公司 | 用于半导体制造的内部等离子体格栅 |
JP2015119177A (ja) * | 2013-12-16 | 2015-06-25 | ピーエスケー・インコーポレーテッド | バッフルアセンブリー及びこれを有する基板処理装置 |
Also Published As
Publication number | Publication date |
---|---|
JP2019507465A (ja) | 2019-03-14 |
KR102227879B1 (ko) | 2021-03-16 |
TW201733698A (zh) | 2017-10-01 |
KR20180085053A (ko) | 2018-07-25 |
US20170207077A1 (en) | 2017-07-20 |
JP7166921B2 (ja) | 2022-11-08 |
JP7250889B2 (ja) | 2023-04-03 |
CN108475634A (zh) | 2018-08-31 |
JP2022020069A (ja) | 2022-01-31 |
WO2017123589A1 (en) | 2017-07-20 |
TWI748980B (zh) | 2021-12-11 |
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TA01 | Transfer of patent application right |
Effective date of registration: 20181130 Address after: California, USA Applicant after: MATTSON TECHNOLOGY, Inc. Applicant after: Beijing Yitang Semiconductor Technology Co.,Ltd. Address before: California, USA Applicant before: MATTSON TECHNOLOGY, Inc. |
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CB02 | Change of applicant information |
Address after: California, USA Applicant after: MATTSON TECHNOLOGY, Inc. Applicant after: Beijing Yitang Semiconductor Technology Co.,Ltd. Address before: California, USA Applicant before: MATTSON TECHNOLOGY, Inc. Applicant before: Beijing Yitang Semiconductor Technology Co.,Ltd. |
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