KR20180085053A - 플라즈마 챔버용 가변 패턴 분리 그리드 - Google Patents

플라즈마 챔버용 가변 패턴 분리 그리드 Download PDF

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Publication number
KR20180085053A
KR20180085053A KR1020187020121A KR20187020121A KR20180085053A KR 20180085053 A KR20180085053 A KR 20180085053A KR 1020187020121 A KR1020187020121 A KR 1020187020121A KR 20187020121 A KR20187020121 A KR 20187020121A KR 20180085053 A KR20180085053 A KR 20180085053A
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South Korea
Prior art keywords
plasma chamber
variable pattern
separation grid
pattern separation
grid
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KR1020187020121A
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English (en)
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KR102227879B1 (ko
Inventor
블라디미르 나고르니
샤우밍 마
비제이 엠. 바니아프라
리안 엠. 파쿨스키
Original Assignee
맷슨 테크놀로지, 인크.
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Application filed by 맷슨 테크놀로지, 인크. filed Critical 맷슨 테크놀로지, 인크.
Publication of KR20180085053A publication Critical patent/KR20180085053A/ko
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Publication of KR102227879B1 publication Critical patent/KR102227879B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
    • H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Optics & Photonics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
KR1020187020121A 2016-01-15 2017-01-11 플라즈마 챔버용 가변 패턴 분리 그리드 KR102227879B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201662279162P 2016-01-15 2016-01-15
US62/279,162 2016-01-15
PCT/US2017/012940 WO2017123589A1 (en) 2016-01-15 2017-01-11 Variable pattern separation grid for plasma chamber

Publications (2)

Publication Number Publication Date
KR20180085053A true KR20180085053A (ko) 2018-07-25
KR102227879B1 KR102227879B1 (ko) 2021-03-16

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KR1020187020121A KR102227879B1 (ko) 2016-01-15 2017-01-11 플라즈마 챔버용 가변 패턴 분리 그리드

Country Status (6)

Country Link
US (1) US20170207077A1 (ko)
JP (2) JP7166921B2 (ko)
KR (1) KR102227879B1 (ko)
CN (1) CN108475634B (ko)
TW (1) TWI748980B (ko)
WO (1) WO2017123589A1 (ko)

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US11694911B2 (en) * 2016-12-20 2023-07-04 Lam Research Corporation Systems and methods for metastable activated radical selective strip and etch using dual plenum showerhead
US11201036B2 (en) 2017-06-09 2021-12-14 Beijing E-Town Semiconductor Technology Co., Ltd Plasma strip tool with uniformity control
US10790119B2 (en) 2017-06-09 2020-09-29 Mattson Technology, Inc Plasma processing apparatus with post plasma gas injection
US20190131112A1 (en) * 2017-10-30 2019-05-02 Mattson Technology, Inc. Inductively Coupled Plasma Wafer Bevel Strip Apparatus
CN112368807A (zh) * 2018-12-21 2021-02-12 玛特森技术公司 工件的表面平滑化
US11039527B2 (en) * 2019-01-28 2021-06-15 Mattson Technology, Inc. Air leak detection in plasma processing apparatus with separation grid
GB201904587D0 (en) 2019-04-02 2019-05-15 Oxford Instruments Nanotechnology Tools Ltd Surface processing apparatus
US11348784B2 (en) * 2019-08-12 2022-05-31 Beijing E-Town Semiconductor Technology Co., Ltd Enhanced ignition in inductively coupled plasmas for workpiece processing
JP7404119B2 (ja) * 2020-03-19 2023-12-25 住友重機械工業株式会社 負イオン生成装置
CN114724914A (zh) * 2021-01-04 2022-07-08 江苏鲁汶仪器有限公司 一种等离子体密度控制系统及方法
CN116798844B (zh) * 2023-08-29 2023-11-10 江苏鹏举半导体设备技术有限公司 离子发生装置及粒子移除方法

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US20060102286A1 (en) * 2004-11-12 2006-05-18 Kim Do-Hyeong Plasma processing apparatus
KR20120086264A (ko) * 2011-01-25 2012-08-02 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치 및 플라즈마 처리 방법
JP2014239210A (ja) * 2013-04-05 2014-12-18 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 半導体製造用の内部プラズマグリッド
KR101505948B1 (ko) * 2013-12-16 2015-03-26 피에스케이 주식회사 배플 어셈블리 및 이를 가지는 기판 처리 장치
US20160042982A1 (en) * 2014-08-08 2016-02-11 Taiwan Semiconductor Manufacturing Co., Ltd. Gas-flow control method for plasma apparatus

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JPS62146268A (ja) * 1985-12-20 1987-06-30 Anelva Corp 薄膜製造装置
JP3317209B2 (ja) * 1997-08-12 2002-08-26 東京エレクトロンエイ・ティー株式会社 プラズマ処理装置及びプラズマ処理方法
US6348688B1 (en) * 1998-02-06 2002-02-19 Perseptive Biosystems Tandem time-of-flight mass spectrometer with delayed extraction and method for use
KR100698614B1 (ko) * 2005-07-29 2007-03-22 삼성전자주식회사 플라즈마 가속장치 및 그것을 구비하는 플라즈마 처리시스템
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KR20110062534A (ko) * 2009-12-03 2011-06-10 세메스 주식회사 플라즈마 처리 장치
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060102286A1 (en) * 2004-11-12 2006-05-18 Kim Do-Hyeong Plasma processing apparatus
KR20120086264A (ko) * 2011-01-25 2012-08-02 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치 및 플라즈마 처리 방법
JP2014239210A (ja) * 2013-04-05 2014-12-18 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 半導体製造用の内部プラズマグリッド
KR101505948B1 (ko) * 2013-12-16 2015-03-26 피에스케이 주식회사 배플 어셈블리 및 이를 가지는 기판 처리 장치
JP2015119177A (ja) * 2013-12-16 2015-06-25 ピーエスケー・インコーポレーテッド バッフルアセンブリー及びこれを有する基板処理装置
US20160042982A1 (en) * 2014-08-08 2016-02-11 Taiwan Semiconductor Manufacturing Co., Ltd. Gas-flow control method for plasma apparatus

Also Published As

Publication number Publication date
WO2017123589A1 (en) 2017-07-20
TW201733698A (zh) 2017-10-01
KR102227879B1 (ko) 2021-03-16
JP7250889B2 (ja) 2023-04-03
CN108475634B (zh) 2022-08-12
CN108475634A (zh) 2018-08-31
JP7166921B2 (ja) 2022-11-08
JP2019507465A (ja) 2019-03-14
JP2022020069A (ja) 2022-01-31
US20170207077A1 (en) 2017-07-20
TWI748980B (zh) 2021-12-11

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