CN108475620B - 通过氟处理进行的igzo钝化的氧空位 - Google Patents

通过氟处理进行的igzo钝化的氧空位 Download PDF

Info

Publication number
CN108475620B
CN108475620B CN201780006372.7A CN201780006372A CN108475620B CN 108475620 B CN108475620 B CN 108475620B CN 201780006372 A CN201780006372 A CN 201780006372A CN 108475620 B CN108475620 B CN 108475620B
Authority
CN
China
Prior art keywords
metal oxide
layer
fluorine
oxide semiconductor
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201780006372.7A
Other languages
English (en)
Chinese (zh)
Other versions
CN108475620A (zh
Inventor
徐豪键
任东吉
元泰景
张雪娜
元镐成
罗德尼·顺隆·利马
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN108475620A publication Critical patent/CN108475620A/zh
Application granted granted Critical
Publication of CN108475620B publication Critical patent/CN108475620B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01342—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid by deposition, e.g. evaporation, ALD or laser deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
    • H10P14/3426—Oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3434—Deposited materials, e.g. layers characterised by the chemical composition being oxide semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3442—N-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3444—P-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3446—Transition metal elements; Rare earth elements

Landscapes

  • Thin Film Transistor (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
CN201780006372.7A 2016-01-14 2017-01-10 通过氟处理进行的igzo钝化的氧空位 Active CN108475620B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201662278955P 2016-01-14 2016-01-14
US62/278,955 2016-01-14
US15/359,325 2016-11-22
US15/359,325 US10134878B2 (en) 2016-01-14 2016-11-22 Oxygen vacancy of IGZO passivation by fluorine treatment
PCT/US2017/012872 WO2017123552A1 (en) 2016-01-14 2017-01-10 Oxygen vacancy of igzo passivation by fluorine treatment

Publications (2)

Publication Number Publication Date
CN108475620A CN108475620A (zh) 2018-08-31
CN108475620B true CN108475620B (zh) 2023-04-04

Family

ID=59311423

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201780006372.7A Active CN108475620B (zh) 2016-01-14 2017-01-10 通过氟处理进行的igzo钝化的氧空位

Country Status (5)

Country Link
US (1) US10134878B2 (https=)
JP (2) JP6916186B2 (https=)
KR (1) KR102706325B1 (https=)
CN (1) CN108475620B (https=)
WO (1) WO2017123552A1 (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10224432B2 (en) * 2017-03-10 2019-03-05 Applied Materials, Inc. Surface treatment process performed on devices for TFT applications
CN108281509B (zh) * 2018-01-30 2020-03-17 电子科技大学 氧化物半导体基光电探测器及提高其性能的方法
JP7153499B2 (ja) * 2018-08-08 2022-10-14 東京エレクトロン株式会社 酸素含有被処理体の処理方法及び処理装置
KR102760140B1 (ko) 2019-02-11 2025-01-24 삼성디스플레이 주식회사 표시 장치
KR102885296B1 (ko) 2019-08-30 2025-11-12 삼성디스플레이 주식회사 표시 장치
GB201913533D0 (en) 2019-09-19 2019-11-06 Univ Southampton Optical thin films and fabrication thereof
US11430898B2 (en) 2020-03-13 2022-08-30 Applied Materials, Inc. Oxygen vacancy of amorphous indium gallium zinc oxide passivation by silicon ion treatment
KR102752707B1 (ko) 2020-05-29 2025-01-13 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법
TWI750902B (zh) * 2020-11-18 2021-12-21 友達光電股份有限公司 薄膜電晶體及其形成方法
CN113764282B (zh) * 2021-09-03 2023-09-05 深圳市华星光电半导体显示技术有限公司 一种背沟道蚀刻型的薄膜电晶体及其制作方法
CN114093889A (zh) * 2021-11-02 2022-02-25 Tcl华星光电技术有限公司 阵列基板及制备方法和显示面板
CN114203556B (zh) * 2021-12-08 2023-05-23 中山大学 一种用于调控氧化镓半导体表层电导的方法及半导体晶圆
CN115188827B (zh) * 2021-12-09 2025-05-30 友达光电股份有限公司 半导体装置及其制造方法
CN114551608A (zh) * 2022-03-09 2022-05-27 浙江理工大学 一种等离子处理氧化镓基日盲紫外探测器及其制备方法
KR20250145032A (ko) * 2023-02-10 2025-10-13 램 리써치 코포레이션 할로겐화된 유전체 산화물의 증착에서 평탄대 전압의 제어

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001007093A (ja) * 1999-05-03 2001-01-12 Applied Materials Inc 誘電エッチングプロセスのためのエッチング後処理方法
JP2012033911A (ja) * 2010-07-02 2012-02-16 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
WO2012083220A2 (en) * 2010-12-16 2012-06-21 The Regents Of The University Of California Generation of highly n-type, defect passivated transition metal oxides using plasma fluorine insertion

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5650655A (en) 1994-04-28 1997-07-22 Micron Technology, Inc. Integrated circuitry having electrical interconnects
US5874745A (en) 1997-08-05 1999-02-23 International Business Machines Corporation Thin film transistor with carbonaceous gate dielectric
WO2008039845A2 (en) 2006-09-26 2008-04-03 Applied Materials, Inc. Fluorine plasma treatment of high-k gate stack for defect passivation
WO2009117438A2 (en) * 2008-03-20 2009-09-24 Applied Materials, Inc. Process to make metal oxide thin film transistor array with etch stopping layer
CN103098185B (zh) 2010-08-20 2017-02-08 应用材料公司 形成无氢含硅介电薄膜的方法
JP6004308B2 (ja) 2011-08-12 2016-10-05 Ｎｌｔテクノロジー株式会社 薄膜デバイス
TWI522490B (zh) 2012-05-10 2016-02-21 應用材料股份有限公司 利用微波電漿化學氣相沈積在基板上沈積膜的方法
US8735305B2 (en) 2012-05-24 2014-05-27 Intermolecular, Inc. Methods of forming fluorinated hafnium oxide gate dielectrics by atomic layer deposition
US20140091379A1 (en) * 2012-10-01 2014-04-03 Applied Materials, Inc. Fluorocarbon coating having low refractive index
KR20150127122A (ko) 2013-03-01 2015-11-16 어플라이드 머티어리얼스, 인코포레이티드 금속 옥사이드 ｔｆｔ 안정성 개선
WO2014159033A1 (en) * 2013-03-13 2014-10-02 Applied Materials, Inc. Vth control method of multiple active layer metal oxide semiconductor tft
US20150140836A1 (en) * 2013-11-18 2015-05-21 Intermolecular, Inc. Methods to Control SiO2 Etching During Fluorine Doping of Si/SiO2 Interface
WO2015194176A1 (ja) * 2014-06-20 2015-12-23 株式会社Ｊｏｌｅｄ 薄膜トランジスタ、薄膜トランジスタの製造方法及び有機ｅｌ表示装置
US10008611B2 (en) * 2014-06-26 2018-06-26 Joled Inc. Thin film transistor and organic EL display device
US20160155849A1 (en) * 2014-12-02 2016-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing semiconductor device, module, and electronic device
KR20160137843A (ko) * 2015-05-22 2016-12-01 엘지디스플레이 주식회사 고신뢰성 금속 산화물 반도체 물질을 포함하는 박막 트랜지스터 기판
CN105572990B (zh) * 2015-12-21 2019-07-12 武汉华星光电技术有限公司 阵列基板及其制造方法、液晶显示面板

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001007093A (ja) * 1999-05-03 2001-01-12 Applied Materials Inc 誘電エッチングプロセスのためのエッチング後処理方法
JP2012033911A (ja) * 2010-07-02 2012-02-16 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
WO2012083220A2 (en) * 2010-12-16 2012-06-21 The Regents Of The University Of California Generation of highly n-type, defect passivated transition metal oxides using plasma fluorine insertion

Also Published As

Publication number Publication date
KR20180095115A (ko) 2018-08-24
JP2019508883A (ja) 2019-03-28
KR102706325B1 (ko) 2024-09-12
JP2021182630A (ja) 2021-11-25
JP6916186B2 (ja) 2021-08-11
WO2017123552A1 (en) 2017-07-20
CN108475620A (zh) 2018-08-31
US20170207327A1 (en) 2017-07-20
US10134878B2 (en) 2018-11-20
JP7260599B2 (ja) 2023-04-18

Similar Documents

Publication Publication Date Title
CN108475620B (zh) 通过氟处理进行的igzo钝化的氧空位
US9871124B2 (en) Method of IGZO and ZnO TFT fabrication with PECVD SiO2 passivation
US20140357065A1 (en) Amorphous silicon thickness uniformity improved by process diluted with hydrogen and argon gas mixture
US8840763B2 (en) Methods for stable process in a reactive sputtering process using zinc or doped zinc target
US20140273342A1 (en) Vth control method of multiple active layer metal oxide semiconductor tft
US10170569B2 (en) Thin film transistor fabrication utlizing an interface layer on a metal electrode layer
CN105051906B (zh) 用于tft的金属氧化物半导体的缓冲层
US20240088301A1 (en) Process to reduce plasma induced damage
US11430898B2 (en) Oxygen vacancy of amorphous indium gallium zinc oxide passivation by silicon ion treatment
CN105229794A (zh) 在钝化层或蚀刻停止层中具有插入物的tft
CN207002827U (zh) 扩散器及pecvd设备

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
TG01 Patent term adjustment
TG01 Patent term adjustment