CN108473379A - 结合有金属或金属杂化箔的厚膜糊居间的陶瓷 - Google Patents
结合有金属或金属杂化箔的厚膜糊居间的陶瓷 Download PDFInfo
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- thick film
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- metal foil
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- 239000002184 metal Substances 0.000 title claims abstract description 83
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 83
- 239000000919 ceramic Substances 0.000 title claims abstract description 73
- 239000011888 foil Substances 0.000 title claims abstract description 58
- 239000000463 material Substances 0.000 claims abstract description 76
- 238000000034 method Methods 0.000 claims abstract description 53
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 239000011195 cermet Substances 0.000 claims abstract description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 45
- 239000010949 copper Substances 0.000 claims description 42
- 229910052802 copper Inorganic materials 0.000 claims description 40
- 239000011521 glass Substances 0.000 claims description 26
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 claims description 19
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 238000002360 preparation method Methods 0.000 claims description 4
- 238000007650 screen-printing Methods 0.000 claims description 2
- 239000004615 ingredient Substances 0.000 description 24
- 239000002245 particle Substances 0.000 description 21
- 239000000203 mixture Substances 0.000 description 8
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 238000005245 sintering Methods 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 239000011889 copper foil Substances 0.000 description 5
- 229910052593 corundum Inorganic materials 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 229910001845 yogo sapphire Inorganic materials 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 229910011255 B2O3 Inorganic materials 0.000 description 3
- KKCBUQHMOMHUOY-UHFFFAOYSA-N Na2O Inorganic materials [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910003069 TeO2 Inorganic materials 0.000 description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 3
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 3
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 3
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 description 3
- YEXPOXQUZXUXJW-UHFFFAOYSA-N lead(II) oxide Inorganic materials [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 3
- NOTVAPJNGZMVSD-UHFFFAOYSA-N potassium monoxide Inorganic materials [K]O[K] NOTVAPJNGZMVSD-UHFFFAOYSA-N 0.000 description 3
- LAJZODKXOMJMPK-UHFFFAOYSA-N tellurium dioxide Chemical compound O=[Te]=O LAJZODKXOMJMPK-UHFFFAOYSA-N 0.000 description 3
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- DAFHKNAQFPVRKR-UHFFFAOYSA-N (3-hydroxy-2,2,4-trimethylpentyl) 2-methylpropanoate Chemical compound CC(C)C(O)C(C)(C)COC(=O)C(C)C DAFHKNAQFPVRKR-UHFFFAOYSA-N 0.000 description 1
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000000546 pharmaceutical excipient Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
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Abstract
描述了一种制备结合有金属箔的陶瓷基材的方法。此外,描述了具有厚膜层的金属陶瓷基材和厚膜糊用于将金属箔结合到陶瓷基材上的用途。
Description
描述
本发明涉及制备通过厚膜层结合有金属箔的陶瓷基材的方法。此外,本发明涉及在陶瓷基材和金属箔之间具有特定厚膜层的金属陶瓷基材,以及厚膜糊用于将金属箔结合到陶瓷基材上的用途。
在汽车特别是电动车辆或混合动力车辆的功率微电子应用领域中,使用具有高载流能力和高耐用性的电子电路是一种高需求。为此,需要使用具有高载流能力的高导电性材料,例如铜。同时,各种材料应具有高散热能力(散热)。此外,各种材料需要通过键合线进行适当的连接,具有良好的可焊性,并且应该有可能通过无电镀的方式进行氧化保护。
在DBC技术中,铜箔通过共晶熔体结合到陶瓷基材上。这种工艺技术存在一些缺点,例如大量不合格品,陶瓷基材和铜箔之间产生空腔,以及对温度变化相对低的抵抗力(在一些热循环后导致分层)。例如在DE 10 2010 025 313A中描述了相应的技术,其中将金属和该金属的氧化物的混合物施加在陶瓷基材上,然后通过DCB工艺将陶瓷基材结合。另一方面,基于厚印刷技术制备的基材也是已知的。这些基材具有生产成本高以及由烧结层的孔隙引起的低电导率和热导率的缺点。
从这种现有技术的情况出发,本发明的目的是提供一种避免上述缺点的金属陶瓷基材。
在第一方面中,该目的通过用于制备结构化金属陶瓷基材的方法解决,其特征在于以下工艺步骤:
(1.1)将厚膜糊施加到陶瓷基材上;
(1.2)将金属箔施加到陶瓷基材的厚膜层上;和
(1.3)通过厚膜层将金属箔与陶瓷基材结合。
在本发明的第二方面中,下面的目的通过一种金属陶瓷基材来解决,其包含:
(a)陶瓷基材,和在其上提供的
(b)含金属的厚膜层,和在其上提供的
(c)金属箔。
根据本发明,已经发现,基于厚膜技术可以提供一种用于功率电子领域的基材,其中金属箔通过金属厚膜糊结合在陶瓷基材上(如Al2O3陶瓷,AlN陶瓷或Si3N4陶瓷)。所得到的金属陶瓷基材具有高导电性和耐久性,并且可以以降低的成本生产。
首先描述上述制备结构化金属陶瓷基材的方法。由此,根据本发明的方法可以在两个实施方案中进行:
所要求保护的方法的第一实施方案
在根据本发明第一实施方案的方法中,在第一工艺步骤中将厚膜糊施加到陶瓷基材上。
第一方面:不连续地施加厚膜糊
在所要求保护的方法的第一方面中,可以将厚膜糊不连续地施加到陶瓷基材上,使得厚膜糊仅施加在陶瓷基材的与成品金属陶瓷基材的预期电子电路对应的那些部分上。
在该第一方面中,之后可以将金属箔连续地施加在陶瓷基材的整个厚膜层上。之后,将金属箔与陶瓷基材结合,然后例如通过蚀刻进行结构化。
在该第一方面中,金属箔也可以不连续地施加在厚膜层上,仅在陶瓷基材的施加厚膜糊的那些部分上。
第二方面:连续地施加厚膜糊
在根据本发明方法的另外第二方面中,将厚膜糊连续地施加在陶瓷基材上。
在该第二方面中,可以将金属箔连续地施加在陶瓷基材的整个厚膜层上,并且在结合之后例如通过蚀刻将金属箔和厚膜层结构化。
在该第二方面中,金属箔也可以不连续地仅施加在陶瓷基材的与成品金属陶瓷基材的预期电子电路对应的那些部分上。在这种情况下,在结合之后例如通过蚀刻将厚膜层结构化。
在将厚膜糊施加到陶瓷基材上之后,可以在将金属箔施加到厚膜层上之前将厚膜糊风干。
在将厚膜糊施加到陶瓷基材上之后,也可以在施加金属箔之前将厚膜糊烧结。这种烧结工艺可以通过1025℃以下的温度进行。优选地,烧结工艺通过300至1025℃,更优选600至1025℃,更优选900至1025℃,更优选900至小于1025℃,更优选900至1000℃的温度进行。烧结工艺的这种温度特别不通过DCB工艺提供厚膜糊与基材的结合,而是通过已知的厚膜技术在陶瓷基材上提供几乎连续的涂层。因此,该烧结工艺步骤将本发明方法与例如DE10 2010 025 313 A中描述的方法区分开来,在DE 10 2010 025 313 A的方法中,金属和金属氧化物的混合物在较高温度和DCB条件下结合到陶瓷基材上。在根据本发明的方法中,在进行烧结工艺时不应用这种DCB条件(特别是所需的温度)。在将厚膜糊施加到陶瓷基材上之后,厚膜糊也可以在将金属箔施加到厚膜层上之前风干和烧结。烧结条件如上所述。
所施加的厚膜糊的烧结工艺通常在惰性气氛例如氮气气氛下进行。
所要求保护的方法的第二实施方案
在根据本发明第二实施方案的用于制备结构化金属陶瓷基材的另一改进方法中,所述改进的要求保护的方法包括以下工艺步骤:
(2.1)将厚膜糊施加到金属箔上;
(2.2)将陶瓷基材施加到金属箔的厚膜层上;和
(2.3)通过厚膜层将金属箔与陶瓷基材结合。
在这种改进的方法中,可以通过丝网印刷将厚膜糊涂覆到金属箔基材上。
在将厚膜糊施加到金属箔上之后,可以在将金属箔施加到陶瓷上之前将厚膜糊风干。
在根据本发明的改进方法中,金属箔和厚膜糊在通过厚膜层将金属箔结合到陶瓷基材上之前或之后通过蚀刻来结构化。
对于所要求保护的方法的两个实施方案给出以下解释:
可以通过多层印刷将厚膜糊施加到基材或金属箔上。如果应用多层涂层的工艺步骤并且将厚膜糊施加到基材上,则多层涂层的第一涂层可以具有用于接触的线。
在用于制备结构化金属陶瓷基材的两种方法中,即正常方法和改进方法中,通过焙烧来进行结合步骤(1.3)和/或(2.3)。通常,焙烧在750-1100℃,更优选800-1085℃的温度下进行。在这些结合步骤中,由于金属箔与由厚膜糊提供的层接触而不与基材接触,因此金属箔基本上不通过应用DCB工艺而通过厚膜糊结合到基材上。
在根据本发明方法的两个实施方案中,金属箔在通过厚膜层结合到陶瓷基材上之前可以被氧化。在本发明的另一个实施方案中,金属箔在通过厚膜层结合到陶瓷基材上之前不被氧化。
在根据两个实施方案的所要求保护的方法的进一步改进中,厚膜层在将金属箔结合到陶瓷基材上之前可以被氧化。在本发明的另一个实施方案中,厚膜层在将金属箔结合到陶瓷基材上之前不被氧化。
将金属箔结合到具有厚膜层的陶瓷基材上的工艺步骤(1.3)和/或(2.3)可以在压力下进行。
在根据本发明的两个实施方案中,金属箔优选为铜箔。
在本发明的另一方面中,陶瓷可以选自由Al2O3陶瓷,AlN陶瓷和Si3N4陶瓷组成的组。
厚膜糊
在下文中,更详细地描述可以在根据本发明的两个实施方案的方法中使用的厚膜糊:
根据本发明的方法中使用的厚膜糊(在正常方法中或在改进方法中)可以包含作为金属的铜和任选的Bi2O3。
厚膜糊包含优选40-92重量%的铜,更优选40至小于92重量%的铜,更优选70至小于92重量%的铜,最优选75-90重量%的铜,各自基于厚膜糊的总重量。
厚膜糊包含优选0至50重量%的Bi2O3,更优选1至20重量%的Bi2O3,最优选2至15重量%的Bi2O3,各自基于厚膜糊的总重量。
用于厚膜糊中的铜颗粒具有优选在0.1至20μm之间,更优选在1至10μm之间,最优选在2至7μm之间的中值粒径(d50)。
任选用于厚膜糊中的Bi2O3颗粒具有优选小于100μm,更优选小于20μm,最优选小于10μm的中值粒径(d50)。
在本发明的另一个实施方案中,含金属的厚膜糊可以包含铜和玻璃组分。
在同时使用玻璃组分的情况下,厚膜糊中铜的含量可以如上所定义,即优选40-92重量%,更优选40至小于92重量%的铜,更优选70至小于92重量%的铜,最优选75-90重量%的铜,各自基于厚膜糊的总重量。
在厚膜糊中使用玻璃组分的情况下,厚膜糊包含优选0至50重量%,更优选1至20重量%,最优选2至15重量%的玻璃组分,各自基于厚膜糊的总重量。
在厚膜糊中使用玻璃组分的情况下,铜颗粒可以具有与上面已经提到的相同的中值粒径(d50),即优选在0.1至20μm之间,更优选在1至10μm之间,最优选在2和7μm之间。
在厚膜糊中使用玻璃组分的情况下,玻璃组分颗粒可具有小于100μm,更优选小于20μm,最优选小于10μm的中值粒径(d50)。
含金属的厚膜糊,优选基于铜,除玻璃组分和Bi2O3外,还可以包含选自由PbO,TeO2,Bi2O3,ZnO,B2O3,Al2O3,TiO2,CaO,K2O,MgO,Na2O,ZrO2和Li2O组成的组的其他组分。
在将厚膜糊施加到陶瓷基材上或金属箔上之后,层厚优选为5-150μm,更优选20-125μm,最优选30-100μm。
在本发明的优选实施方案中,厚膜糊中氧化铜的量小于2重量%,更优选小于1.9重量%,更优选小于1.8重量%,更优选小于1.5重量%。
金属陶瓷基材
另一方面,本发明涉及一种金属陶瓷基材,其包含:
(a)陶瓷基材,和在其上提供的
(b)含金属的厚膜层,和在其上提供的
(c)金属箔。
金属箔和/或含金属的厚膜层可以是结构化的。
提供到陶瓷基材上的厚膜层优选包含作为金属的铜和任选的Bi2O3。
厚膜糊包含优选40-92重量%的铜,更优选40至小于92重量%的铜,更优选70至小于92重量%的铜,最优选75-90重量%的铜,各自基于厚膜糊的总重量。
厚膜糊包含优选0至50重量%的Bi2O3,更优选1至20重量%的Bi2O3,最优选2至15重量%的Bi2O3,各自基于厚膜糊的总重量。
用于厚膜糊中的铜颗粒具有优选在0.1至20μm之间,更优选在1至10μm之间,最优选在2至7μm之间的中值粒径(d50)。
任选用于厚膜糊中的Bi2O3颗粒的中值粒径(d50)优选小于100μm,更优选小于20μm,最优选小于10μm。
在本发明的另一个实施方案中,含金属的厚膜糊可以包含铜和玻璃组分。
在同时使用玻璃组分的情况下,厚膜糊中铜的含量可以如上所定义,即优选40-92重量%,更优选70至92重量%的铜,最优选75至90重量%的铜,各自基于厚膜糊的总重量。
在厚膜糊中使用玻璃组分的情况下,厚膜糊包含优选0至50重量%,更优选1至20重量%,最优选2至15重量%的玻璃组分,各自基于厚膜糊的总重量。
在厚膜糊中使用玻璃组分的情况下,铜颗粒可以具有与上面已经提到的相同的中值粒径(d50),即优选在0.1至20μm之间,更优选在1至10μm之间,最优选在2和7μm之间。
在厚膜糊中使用玻璃组分的情况下,玻璃组分颗粒可以具有小于100μm,更优选小于20μm,最优选小于10μm的中值粒径(d50)。
除了玻璃组分和Bi2O3之外,含金属的厚膜糊还可包含选自由PbO,TeO2,Bi2O3,ZnO,B2O3,Al2O3,TiO2,CaO,K2O,MgO,Na2O,ZrO2和Li2O组成的组的其他组分。
厚膜糊的层厚优选为10-150μm,更优选为20-125μm,最优选为30-100μm。
金属箔优选为铜箔。
在本发明的另一方面中,陶瓷可以选自由Al2O3陶瓷,AlN陶瓷和Si3N4陶瓷组成的组。
根据本发明的金属陶瓷基材可以优选根据上述方法制备。
另一方面,本发明涉及上述厚膜糊在制备金属陶瓷基材中作为陶瓷基材和金属箔之间的中间层的用途。使用上述厚膜是为了避免在通过热循环操作过程中所得基材和金属箔构成的系统的分层。
提供到陶瓷基材上的厚膜层优选包含作为金属的铜和任选的Bi2O3。
厚膜糊包含优选40-92重量%的铜,更优选40至小于92重量%的铜,更优选70至小于92重量%的铜,最优选75-90重量%的铜,各自基于厚膜糊的总重量。
厚膜糊包含优选0至50重量%的Bi2O3,更优选1至20重量%的Bi2O3,最优选2至15重量%的Bi2O3,各自基于厚膜糊的总重量。
用于厚膜糊中的铜颗粒具有优选在0.1至20μm之间,更优选在1至10μm之间,最优选在2至7μm之间的中值粒径(d50)。
任选用于厚膜糊中的Bi2O3颗粒具有优选小于100μm,更优选小于20μm,最优选小于10μm的中值粒径(d50)。
在本发明的另一个实施方案中,含金属的厚膜糊可以包含铜和玻璃组分。
在同时使用玻璃组分的情况下,厚膜糊中铜的含量可以如上所定义,即优选40-92重量%,更优选70至92重量%的铜,最优选75至90重量%的铜,各自基于厚膜糊的总重量。
在厚膜糊中使用玻璃组分的情况下,厚膜糊包含优选0至50重量%,更优选1至20重量%,最优选2至15重量%的玻璃组分,各自基于厚膜糊的总重量。
在厚膜糊中使用玻璃组分的情况下,铜颗粒可以具有与上面已经提到的相同的中值粒径(d50),即优选在0.1至20μm之间,更优选在1至10μm之间,最优选在2和7μm之间。
在厚膜糊中使用玻璃组分的情况下,玻璃组分颗粒可以具有小于100μm,更优选小于20μm,最优选小于10μm的中值粒径(d50)。
除了玻璃组分和Bi2O3之外,含金属的厚膜糊还可包含选自由PbO,TeO2,Bi2O3,ZnO,B2O3,Al2O3,TiO2,CaO,K2O,MgO,Na2O,ZrO2和Li2O组成的组的其他组分。
厚膜糊的层厚优选为10-150μm,更优选为20-125μm,最优选为30-100μm。
金属箔优选为铜箔。
就以下实施例更详细地描述本发明:
从以下玻璃组合物(以重量%计)开始制备厚膜糊料:
赋形剂制剂
Texanol[重量%] | 丁基二甘醇二甲醚 | 丙烯酸类树脂 |
43 | 23 | 34 |
糊制剂
由这些糊制剂开始,通过将糊以40μm的厚度印刷在Al2O3陶瓷基材上来制备陶瓷金属基材。将糊在110℃的烘箱中干燥10分钟,并在950℃下烧结10分钟,然后将300μm厚的Cu箔施加到干燥过的糊上,并将该复合物在1040℃下焙烧150分钟。
为了比较,由相同的陶瓷基材和相同的Cu箔开始制备陶瓷金属基材,其与使用糊的实施例相同,但是使用标准的DCB方法,其中结合温度为1063℃,持续240分钟。
成品金属陶瓷基材经受热循环(在-40℃下15分钟,15秒转移时间,在+150℃下15分钟)。测试结果可以在下表中看到。
金属陶瓷基材 | 糊 | 在分层前热循环的# |
1 | A | 1550 |
2 | B | 2470 |
3 | C | 3040 |
4 | D | 2850 |
5 | 没有糊,标准DCB方法 | 100 |
Claims (15)
1.一种制备结构化金属陶瓷基材的方法,其特征在于以下工艺步骤:
(1.1)将厚膜糊施加到陶瓷基材上;
(1.2)将金属箔施加到陶瓷基材的厚膜层上;和
(1.3)通过厚膜层将金属箔与陶瓷基材结合。
2.一种制备结构化金属陶瓷基材的方法,其特征在于以下工艺步骤:
(2.1)将厚膜糊施加到金属箔上;
(2.2)将陶瓷基材施加到金属箔的厚膜层上;和
(2.3)通过厚膜层将金属箔与陶瓷基材结合。
3.根据权利要求1或2所述的方法,其特征在于所述厚膜糊被连续地或不连续地施加。
4.根据权利要求1至3中任一项所述的方法,其特征在于所述金属箔被连续地或不连续地施加。
5.根据权利要求1至4中任一项所述的方法,其特征在于通过丝网印刷将所述厚膜糊涂覆到金属箔或陶瓷基材上。
6.根据权利要求1至5中任一项所述的方法,其特征在于所述金属箔和/或所述厚膜层在结合到陶瓷基材之前被氧化。
7.根据权利要求1至6中任一项所述的方法,其特征在于通过多层印刷将所述厚膜糊施加到基材或金属箔上。
8.根据权利要求1和3至7所述的方法,其特征在于通过多层涂覆将所述厚膜糊施加到基材上,且所述多层涂层的第一涂层具有用于接触的线。
9.根据权利要求1至8中任一项所述的方法,其特征在于所述厚膜糊包含作为金属的铜和任选的Bi2O3。
10.根据权利要求1至8中任一项所述的方法,其特征在于所述厚膜糊包含作为金属的铜和任选的玻璃材料。
11.根据权利要求9或10所述的方法,其特征在于所述厚膜糊包含40至92重量%,更优选70至92重量%,最优选75至90重量%的铜,各自基于厚膜糊的总重量。
12.一种金属陶瓷基材,其包含:
(a)陶瓷基材,和在其上提供的
(b)含金属的厚膜层,和在其上提供的
(c)金属箔。
13.根据权利要求12所述的金属陶瓷基材,其特征在于所述厚膜层和/或所述金属箔是结构化的。
14.厚膜糊在制备金属陶瓷基材中作为陶瓷基材和金属箔之间的中间层的用途。
15.根据权利要求14所述的用途,其特征在于所述厚膜糊包含作为金属的铜和任选的Bi2O3。
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JPH11236270A (ja) * | 1998-02-25 | 1999-08-31 | Kyocera Corp | 窒化ケイ素質基板及びその製造方法 |
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JP4345054B2 (ja) * | 2003-10-09 | 2009-10-14 | 日立金属株式会社 | セラミックス基板用ろう材及びこれを用いたセラミックス回路基板、パワー半導体モジュール |
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JP5725178B2 (ja) * | 2011-06-30 | 2015-05-27 | 日立金属株式会社 | ろう材、ろう材ペースト、セラミックス回路基板、セラミックスマスター回路基板及びパワー半導体モジュール |
US9799421B2 (en) * | 2013-06-07 | 2017-10-24 | Heraeus Precious Metals North America Conshohocken Llc | Thick print copper pastes for aluminum nitride substrates |
CN104496513B (zh) * | 2014-11-13 | 2017-10-17 | 孝感市汉达电子元件有限责任公司 | 一种陶瓷放电管封接工艺 |
-
2016
- 2016-12-21 EP EP16819915.6A patent/EP3341345B1/en active Active
- 2016-12-21 KR KR1020187009873A patent/KR20180093877A/ko not_active Application Discontinuation
- 2016-12-21 CN CN201680074736.0A patent/CN108473379A/zh not_active Withdrawn
- 2016-12-21 US US16/064,564 patent/US20190002359A1/en not_active Abandoned
- 2016-12-21 JP JP2018519934A patent/JP2019509237A/ja active Pending
- 2016-12-21 WO PCT/EP2016/082161 patent/WO2017108939A1/en unknown
Also Published As
Publication number | Publication date |
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JP2019509237A (ja) | 2019-04-04 |
EP3341345B1 (en) | 2023-07-26 |
WO2017108939A1 (en) | 2017-06-29 |
EP3341345A1 (en) | 2018-07-04 |
KR20180093877A (ko) | 2018-08-22 |
US20190002359A1 (en) | 2019-01-03 |
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