CN108461536A - A kind of two-way trench gate charge storage type IGBT and preparation method thereof - Google Patents
A kind of two-way trench gate charge storage type IGBT and preparation method thereof Download PDFInfo
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- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
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Abstract
A kind of two-way trench gate charge storage type IGBT, belongs to semiconductor power device technology field.The present invention on the basis of traditional two-way CSTBT device architectures by introducing and the equipotential shield trenches structure of emitter metal, and its groove depth is made to be more than charge storage layer, the electric field of charge storage layer is shielded with this, the introducing of shield trenches structure plays the role of effective charge compensation to charge storage layer, and then improve charge storage layer doping concentration and thickness for the limitation of device pressure resistance, improve the breakdown voltage of device；Be conducive to improve the tradeoff between device forward conduction voltage drop Vceon and turn-off power loss Eoff, obtain broader short-circuit safety operation area, while advantageously reducing the saturation current density of device, further improve shorted devices safety operation area；In addition, present invention significantly reduces the grid capacitance of device, especially grid collector capacitance reduces the switching loss of device and the requirement to deleting driving circuit ability to improve the switching speed of device.
Description
Technical field
The invention belongs to power semiconductor device technology field, more particularly to a kind of two-way trench gate charge storage type insulation
Grid bipolar transistor (Bi-directional trench IGBT).
Background technology
Insulated gate bipolar transistor (IGBT) is grinding based on power MOSFET and power bipolar junction transistor npn npn (BJT)
Study carefully the novel power transistor that developed, is equivalent to the MOSFET of bipolar junction transistor (BJT) driving.IGBT has both work(
The advantages of rate MOSFET structure and bipolar junction transistor (BJT) structure：Both there is power MOSFET to be easy to driving, input impedance
Advantage low, switching speed is fast, and with bipolar junction transistor (BJT) on state current density is big, conduction voltage drop is low, loss
Advantage small, stability is good.Based on these excellent device properties, IGBT, which has become, in recent years is widely used in mesohigh neck
The mainstream power device in domain, such as the driving of electric vehicle, motor, interconnection technology, energy-accumulating power station, AC/DA conversions and frequency control
Deng.
Since IGBT inventions, people have been devoted to improve the performance of IGBT.By development in thirties years, to be promoted
The performance of device proposes seven generation IGBT device structures in succession.From non-break-through (NPT) the type IGBT knots with symmetrical blocking characteristics
Structure to use field stop layer with drift region thinned thickness, improve break-over of device characteristic FS IGBT structures.It is used in addition, also having
Trench gate IGBT structure eliminates the areas JFET of original planar gate IGBT structure, reduces the conducting resistance of device with this and obtains more
High MOS structure gully density so that the characteristic of device is significantly improved.7th generation IGBT structure --- trench gate charge is deposited
Storage type insulated gate bipolar transistor (CSTBT) has higher-doped concentration and certain thickness by being introduced below p-type base area
N-type charge storage layer, to introducing hole barrier below p-type base area so that hole concentration of the device close to emitter terminal
Greatly promote, and according to electroneutral require herein electron concentration will greatly increase, thus improve the current-carrying of entire N-type drift region
Sub- concentration distribution enhances the conductivity modulation effect of N-type drift region so that IGBT obtains lower forward conduction voltage drop and more
Compromise between good forward conduction voltage drop and turn-off power loss.As N-type charge storage layer doping concentration is higher, CSTBT conductance tune
Effect improvement processed is bigger, and the forward conduction characteristic of device is also better.
It is well known that transformation of electrical energy is a basic step of many applied power electronics, it is the basic training of electric device
One of can, according to the difference of load requirement, electric device can complete AC-to DC (AC-DC), direct current to exchange (DC-
AC), the transformation of DC to DC (DC-DC) and AC to AC (AC-AC).Indirect conversion may be used i.e. in the transformation of AC-AC
AC-DC-AC modes, can also be in such a way that directly transformation be AC-AC.In traditional AC-DC-AC indirect conversion systems,
The connection inductance (current mode transformation) of the connection capacitance (voltage-type transformation) or big inductance value that need big capacitance is opposite by two parts
Independent transformation system is connected, and this kind of system bulk is big, of high cost.In addition, the service life of capacitance and inductance is far below power
Device, this has seriously affected the reliability of system and service life.AC-AC direct converting systems avoid traditional AC-DC-AC systems
Use inductively or capacitively is connected in system, but requires power switch that there is two-way switch ability.Therefore, the exploitation of two-way switch
The always research hotspot of AC power converting apparatus.The two-way switch of early stage is using the crystalline substance for being equipped with external forced converter circuit
Brake tube.At present two-way switch using most commonly used semiconductor devices is exactly insulated gate bipolar transistor.
Traditional IGBT only has the function of one-way conduction and unidirectionally blocks, and has bidirectional conduction two-way blocking-up function
The main constituted mode of IGBT two-way switch has：Diode bridge, common collector formula and common emitter formula.Later reverse blocking IGBT
(RB-IGBT) it comes into being, RB-IGBT devices have the larger ability for bearing backward voltage so that two-way switch can letter
It is melted into simple inverse parallel structure, eliminates two fast recovery diodes.But the above switch solution, which belongs to combined type, to be opened
It closes, needs a large amount of power chips, increase system cost, each chip chamber of internal system needs a large amount of lines, more complex in addition
Combination enhances the ghost effect of internal system, influences system reliability.
Under background described above, to solve the above-mentioned problems and the integrated of product is realized, industry is by using bonding
Technology or the method for dual surface lithography carry out the development of two-way igbt chip.As silicon-silicon bond closes the development of technology, in recent years people
Propose and be bonded together two identical trench MOS structures are back-to-back successfully in one chip, as shown in Figure 1 i.e.
For bidirectional conduction and the two-way IGBT (Bi-directional IGBT) of two-way blocking-up function, the generation of two-way IGBT is greatly
The cost for reducing device reduces the stray parameter of circuit.IGBT unidirectional compared to tradition, by controlling front and back grid electricity
Pressure, the two-way IGBT can realize symmetrical forward and reverse IGBT conductings and turn-off characteristic.In addition, the structure is in p-type base area 5 and N-type
One layer is symmetrically used between drift region 9 and between p-type base area 25 and N-type drift region 9 than 9 doping concentration of N-type drift region
High positive N-type layer 6 and back side N-type layer 26, on the one hand, it compares the two-way IGBT structure of NPT types and is thinned N-type drift region thickness,
Drift zone resistance is reduced, and then reduces forward conduction voltage drop and improves switching speed；On the other hand, in either direction work
The two-way IGBT is the IGBT structure with charge storage layer and electric field trapping layer when making, and significantly improves the performance of device.
For structure shown in FIG. 1, when IGBT forward or backwards works, due to as the higher-doped concentration of charge storage layer and one
Determining the presence of the positive N-type layer 6 and back side N-type layer 26 of thickness makes IGBT device be obtained close to the carrier concentration profile of emitter terminal
Great improvement has been arrived, the conductance modulation of N-type drift region is improved, has improved the carrier concentration profile of entire N-type drift region,
IGBT is set to obtain the compromise of low forward conduction voltage drop and improved forward conduction voltage drop and turn-off power loss.But for this
Two-way IGBT structure, when IGBT forward or backwards works with positive N-type charge storage layer 6 or back side N-type charge storage layer
The continuous improvement of 26 doping concentrations and thickness can cause device electric breakdown strength to significantly reduce, and which has limited N-type charge storage layers
The size of doping concentration and thickness.In order to effectively shield the adverse effect of N-type charge storage layer, higher device pressure resistance is obtained,
The prior art mainly uses the following two kinds mode：
(1), deep trench gate depth, it is generally the case that the depth of trench gate is more than the junction depth of N-type charge storage layer；
(2), small cellular width, i.e., so that MOS structure gully density is greatly to obtain trench gate spacing as small as possible.
But the implementation of above-mentioned means still has obvious shortcoming：The implementation of mode (1) can increase gate-emitter electricity
Appearance and grid-collector capacitance, and the switching process of IGBT is substantially exactly the process to grid capacitance progress charge/discharge, therefore
This, the increase of grid capacitance can make the charge/discharge time increase, and in turn result in switching speed reduction.Thus, deep trench gate will
Devices switch speed can be reduced, increase devices switch loss, influence the compromise characteristic of break-over of device pressure drop and switching loss.And
The implementation of mode (2) on the one hand will increase the grid capacitance of device, cause devices switch speed to reduce, switching loss increases, shadow
The compromise characteristic of Chinese percussion instrument part conduction voltage drop and switching loss；On the other hand, the excessive saturation electricity that will also lead to device of gully density
Current density increases, so that shorted devices safety operation area (SCSOA) is deteriorated.In addition, grid oxide layer used in trench gate structure
It is typically formed in the trench by a thermal oxide, in this way in order to ensure that certain threshold voltage requires entire gate oxide
Thickness it is smaller.However, the size of mos capacitance and the thickness of gate oxide are inversely proportional in device, traditional C/S TBT can be caused in this way
Grid capacitance in device dramatically increases, in addition, the electric field concentration effect of channel bottom can also reduce the breakdown voltage of device, makes
It is poor at the reliability of device.
Invention content
In view of described above, it is an object of the invention to：For deficiency in the prior art, a kind of two-way trench gate is provided
Charge storage type IGBT and preparation method thereof avoids charge by introducing the shield trenches structure of shielded packaged food accumulation layer electric field
The limitation of accumulation layer doping concentration and thickness to device pressure resistance performance, and then reach and improve device electric breakdown strength, improving device just
Tradeoff between conduction voltage drop Vceon and turn-off power loss Eoff improves the switch performance of device, improves shorted devices peace
The purpose of full workspace；Further it is proposed that preparation method and the two-way trench gate charge storage type IGBT of tradition making
Method is compatible with.
To achieve the goals above, the present invention adopts the following technical scheme that：
On the one hand, the present invention provides a kind of two-way trench gate charge storage type IGBT, and a quarter cellular includes symmetrical
MOS structure in 9 front and back of the first conductive type semiconductor drift region is set；It is characterized in that：Positive MOS structure includes
Front side emitter pole metal 1, front spacer medium layer 2, front trench gate structure, front shielding groove structure, front first are conductive
Type semiconductor emitter region 3, positive second conductive type semiconductor emitter region 4, front 5 and of the second conductive type semiconductor base area
Positive first conductive type semiconductor charge storage layer 6；Back side MOS structure includes back side emitter pole metal 21, back side isolated Jie
Matter layer 22, backside trench grid structure, back side shielding groove structure, the back side the first conductive type semiconductor emitter region 23, the back side the
Two conductive type semiconductor emitter region 24, the back side the second conductive type semiconductor base area 25 and the first conductive type semiconductor of the back side
Charge storage layer 26；
In the front MOS structure, positive first conductive type semiconductor charge storage layer 6 is led positioned at described positive first
The top layer of electric type semiconductor drift region 9；The positive second conductive type semiconductor base area 5 is located at positive first conduction type
The top layer of semiconductor charge storage layer 6；The positive second conductive type semiconductor emitter region 4 and positive first conduction type half
Conductor emitter region 3 is mutual indepedent and is disposed in parallel in the top layer of positive second conductive type semiconductor base area 5；
The top layer of the positive first conductive type semiconductor drift region 9 has front trench gate structure and front shielding ditch
Slot structure, the front trench gate structure and front shielding groove structure are inconsistent along the direction that device top layer extends；It is described just
Face trench gate structure includes positive gate electrode 81 and front gate dielectric layer 82, and the positive gate electrode 81 is passed down through front first
Conductive type semiconductor emitter region 3 and positive second conductive type semiconductor base area 5 enter positive first conductive type semiconductor
In charge storage layer 6, i.e., the depth of positive gate electrode 81 is less than the knot of positive first conductive type semiconductor charge storage layer 6
It is deep, positive gate electrode 81 and positive first conductive type semiconductor emitter region 3, positive second conductive type semiconductor base area 5 and
It is connected by front gate dielectric layer 82 between positive first conductive type semiconductor charge storage layer 6,81 upper table of positive gate electrode
Face is connected by front spacer medium layer 2 with front side emitter pole metal 1；The front shielding groove structure includes front shielding electricity
Pole 71 and front shielding trench dielectric layer 72, the front bucking electrode 71 are passed down through positive first conductive type semiconductor hair
It is conductive to penetrate area 3, positive second conductive type semiconductor emitter region 4, positive second conductive type semiconductor base area 5 and front first
Type semiconductor charge storage layer 6 enters in positive first conductive type semiconductor drift region 9, i.e. the depth of front bucking electrode 71
Degree is more than the junction depth of positive first conductive type semiconductor charge storage layer 6, and front bucking electrode 71 is logical with positive gate electrode 81
It crosses front gate dielectric layer 82 or shield trenches dielectric layer 72 is isolated, front bucking electrode 71 and positive first conduction type half
Conductor emitter region 3, positive second conductive type semiconductor emitter region 4, positive second conductive type semiconductor base area 5, front the
Ditch is shielded by front between one conductive type semiconductor charge storage layer 6 and positive first conductive type semiconductor drift region 9
Slot dielectric layer 72 is connected, front bucking electrode 71 and 1 equipotential of front side emitter pole metal；The back side MOS structure and front MOS
Structure is identical.
Further, positive MOS structure can be along the cross of the first conductive type semiconductor drift region 9 with back side MOS structure
Mirror symmetry to the midline, can also be along the transversal centerline crossed-symmetrical of the first conductive type semiconductor drift region 9, i.e. front MOS
Structure is symmetrical about device center dot center with back side MOS structure.
Further, three-dimensional system of coordinate is established by origin of any inflection point of a quarter cellular, a quarter cellular
Bottom surface intersects at two sides of the inflection point respectively as x-axis and z-axis, the excessively described inflection point and makees perpendicular to the straight line of the bottom surface
For y-axis, then gate electrode 81,281 extends to the other end along x-axis or z-axis from device one end, and bucking electrode 71,271 is along z-axis or x
Axis from device one end extend to gate electrode 81,281 sides gate dielectric layer 82,281, gate electrode 81,281 and bucking electrode 71,
271 extending direction is inconsistent.
Further, three-dimensional system of coordinate is established by origin of any inflection point of a quarter cellular, a quarter cellular
Bottom surface intersects at two sides of the inflection point respectively as x-axis and z-axis, the excessively described inflection point and makees perpendicular to the straight line of the bottom surface
For y-axis, then bucking electrode 71,271 extends to the other end along x-axis or z-axis from device one end, and gate electrode 81,281 is along z-axis or x
Axis from device one end extend to bucking electrode 71,271 sides shield trenches dielectric layer 72,272, bucking electrode 71,271 and grid
The extending direction of electrode 81,281 is inconsistent.
First conductive type semiconductor charge storage layer 6 and the PN junction that the second conductive type semiconductor base area 5 is formed are reverse-biased
When can form depletion layer, form the fixed charge different from its free carrier conduction type in the semiconductor layer respectively：For N
Type semiconductor in depletion layer is positively charged ionized donor, in depletion layer is electronegative electricity for P-type semiconductor
From acceptor；Due to the electrode and 1 equipotential of emitter metal in shield trenches structure, it is equivalent to shield trenches structure and is capable of providing
The conduction type charge opposite with charge storage layer, i.e. fixed charge in the second conductive type semiconductor charge storage layer 6 with
The charge type that shield trenches structure provides is on the contrary, to form charge compensation, and the second conductive type semiconductor charge is deposited
A transverse electric field can be formed between reservoir 6 and shield trenches structure to reduce the longitudinal electric field of device, so as to improve device
The breakdown voltage of part.
Further, also there is front second conductive type semiconductor layer 1 in front shielding groove structure bottom,
Overleaf shield trenches structural top also has back side second conductive type semiconductor layer 1.
It is led it is preferred that second conductive type semiconductor layer one 10,210 extends laterally to front first to both sides
The first of 26 top of 6 lower section of electric type semiconductor charge storage layer or the back side the first conductive type semiconductor charge storage layer is led
In electric type semiconductor drift region 9.
Further, also there is second conductive type semiconductor layer 11 in front trench gate structure bottom, overleaf groove
Also there is second conductive type semiconductor layer 211 at the top of grid structure.
Further, front trench gate structure is front division trench gate structure, further includes：Split Electrode 83 and division electricity
Pole dielectric layer 84, correspondingly, backside trench grid structure are that the back side divides trench gate structure, further include：Split Electrode 283 and division
Electrode dielectric 284.
Further, when trench gate structure is division trench gate structure, Split Electrode 83,283 and emitter metal
1,21 equipotential.
Further, when trench gate structure is division trench gate structure, the thickness of Split Electrode dielectric layer 84,284
More than the thickness of gate dielectric layer 82,282.
Further, when trench gate structure is division trench gate structure, below front division trench gate structure also
With second conductive type semiconductor layer 2 11, overleaf dividing also has the second conductive type semiconductor above trench gate structure
Layer 2 211.
It is preferred that second conductive type semiconductor layer 2 11,211 extends laterally to the first conduction of front to both sides
The first of 26 top of 6 lower section of type semiconductor charge storage layer or the back side the first conductive type semiconductor charge storage layer is conductive
In type semiconductor drift region 9.
Due to the size of charge compensation effect mentioned above and transverse electric field to apart from related, in order to enhance shield trenches
The electric field shielding of structure pair the second conductive type semiconductor charge storage layer acts on, using any inflection point of a quarter cellular as origin
Three-dimensional system of coordinate is established, the bottom surface of a quarter cellular intersects at two sides of the inflection point respectively as x-axis and z-axis, excessively institute
State inflection point and perpendicular to the straight line of the bottom surface as y-axis, it is preferable that the first conductive type semiconductor base area 5,25 is along x-axis side
To width be more than its along z-axis width.
Further, in order to enhance the electric field shielding of shield trenches structure pair the second conductive type semiconductor charge storage layer
Effect, emitter to the extraction area of drift region excess minority carrier while reducing grid capacitance when reducing forward conduction, changes
The carrier concentration profile of kind drift region, it is preferable that the width of shield trenches structure is more than the width of trench gate structure.
It is preferred that the thickness of shield trenches dielectric layer 72,272 is more than the thickness of gate dielectric layer 82,282.
Specifically, the first conductive type semiconductor is P-type semiconductor, and the first conductive type semiconductor is N-type semiconductor；Or
The first conductive type semiconductor of person is N-type semiconductor, and the first conductive type semiconductor is P-type semiconductor.
Further, semi-conducting material used in device is any one in Si, SiC, GaAs and GaN or a variety of, each to tie
Semi-conducting material of the same race can be used in structure or semi-conducting material not of the same race is combined.
Further, the gate electrode in groove is any one in polysilicon, SiC, GaAs and GaN or a variety of, each portion
Point same material can be used or non-same material is combined.
On the other hand, the present invention provides a kind of production method of two-way trench gate charge storage type IGBT, which is characterized in that
Include the following steps：
Step 1：Make two identical first conductive type semiconductor drift regions 9；
Step 2：Using identical pre-oxidation, photoetching, etching, ion implanting and high-temperature annealing process, respectively at two
The front of one conductive type semiconductor drift region 9 makes the first conductive type semiconductor charge storage layer 6,26 and the second conductive-type
Second conductive type semiconductor base area 5,25 of type semiconductor charge storage layer 6,26 top layers；
Step 3：Using identical photoetching, etching, thermal oxide, depositing technics, partly led in two the first conduction types respectively
Etching forms first groove on body drift region 9, and the depth of the first groove is more than the first conductive type semiconductor charge storage
Layer 6,26 junction depth and along device top layer horizontal direction extend；Shield trenches dielectric layer 72,272 is formed in first groove inner wall,
Then the screen of the deposition of electrode material formation bucking electrode 71,271 in first groove, the bucking electrode 71,271 and its side
It covers trench dielectric layer 72,272 and forms shield trenches structure；
Step 4：Using identical photoetching, etching, thermal oxide, depositing technics, partly led in two the first conduction types respectively
Etching forms second groove in volume charge accumulation layer 6,26, and the depth of the second groove is less than the first conductive type semiconductor electricity
The junction depth of lotus accumulation layer 6,26 and extend along device top layer longitudinal direction, the mutual not phase of the second groove and the first groove
It is logical；First groove inner wall formed gate dielectric layer 82,282, then in the trench deposit gate material formed gate electrode 81,
281, the gate dielectric layer 82,282 of the gate electrode 81,281 and its side forms trench gate structure；
Step 5：Using identical photoetching, etching, ion implanting and high-temperature annealing process, respectively in two second conductions
The top layer of type semiconductor base area 5,25 makes the second conductive type semiconductor emitter region 4,24 independently of each other and being set up in parallel
With the first conductive type semiconductor emitter region 3,23；The first conductive type semiconductor emitter region 3,23 sides are along device top layer
Longitudinal direction is connected by gate dielectric layer 82,282 with gate electrode 81,281, and the other side passes through screen along device top layer horizontal direction
It covers trench dielectric layer 72,272 with bucking electrode 71,271 to be connected, the second conductive type semiconductor emitter region 4,24 side edges
Device top layer horizontal direction is connected by shield trenches dielectric layer 72,272 with bucking electrode 71,271；
Step 6：Using identical photoetching, etching and depositing technics, respectively in two gate electrodes 81,281 and gate dielectric layer
82,282 upper surface forms spacer medium layer 2,22；
Step 7：Surface deposition metal, using identical photoetching, etching technics, respectively in spacer medium layer 2,22, first
The 3,23, second conductive type semiconductor emitter region of conductive type semiconductor emitter region 4,24, bucking electrode 71,271 and shielding ditch
Emitter metal 1,21 is formed on slot dielectric layer 72,272；
Step 8：Semiconductor chip is overturn, the thickness of two semiconductor chips is thinned respectively using identical technique, then by this
Two identical semiconductor chips are back-to-back to form two-way trench gate charge storage type IGBT device using bonding technology, so far
Complete the preparation of device.
Further, it forms trench gate structure and the sequence of shield trenches structure is commutative.
Further, trench gate structure is formed to lead with the first conductive type semiconductor charge storage layer 6,26 and first is formed
The sequence of electric type semiconductor base area 5,25 is commutative.
Further, by changing grooving mode so that trench gate structure extends to device along device top layer from device one end
The part other end and block extension or shield trenches structure of the shield trenches structure along device top layer along device top layer from device one
End extends to the device other end and blocks trench gate structure along the extension of device top layer.
Specifically, the first conductive type semiconductor is P-type semiconductor, and the first conductive type semiconductor is N-type semiconductor；Or
The first conductive type semiconductor of person is N-type semiconductor, and the first conductive type semiconductor is P-type semiconductor.
Further, semi-conducting material used in device is any one in Si, SiC, GaAs and GaN or a variety of, each to tie
Semi-conducting material of the same race can be used in structure or semi-conducting material not of the same race is combined.
Further, the gate electrode in groove is any one in polysilicon, SiC, GaAs and GaN or a variety of, each portion
Point same material can be used or non-same material is combined.
Details are as follows for the operation principle of the present invention：
In order to solve to lead to break-over of device characteristic and breakdown potential with the thickness of charge storage layer and the raising of doping concentration
Contradiction between pressure, the present invention introduce and emitter metal equipotential shield trenches on the basis of traditional C/S TBT structures
Structure, and make shield trenches structure and trench gate structure inconsistent in device surface extending direction, and the shield trenches knot
The groove depth of structure can form depletion layer when being more than charge storage layer, charge storage layer and the reverse-biased PN junction that base area is formed, respectively half
The fixed charge different from its free carrier conduction type is formed in conductor layer；Due to the electrode and hair in shield trenches structure
Emitter-base bandgap grading metal equipotential is equivalent to shield trenches structure and is capable of providing the conduction type charge opposite with charge storage layer, to
Charge compensation is formed, and a transverse electric field can be formed between charge storage layer and shield trenches structure to reduce the longitudinal direction of device
Electric field, therefore shield trenches structure proposed by the present invention and the three dimensional design of trench gate structure can play electricity to charge storage layer
Lotus compensating action to the electric field of effective shielded packaged food accumulation layer, and then improves the doping concentration and thickness of charge storage layer
For the limitation of device pressure resistance, achieve the purpose that the breakdown voltage for improving device.Also, the trench wall of shield trenches structure
Dielectric layer can thicken, and be conducive to alleviate electric field concentration effect, further increase the breakdown voltage of device.Just because of shielding ditch
Slot structure charge compensation effect charge storage layer doping concentration and thickness for device pressure resistance limitation, therefore, using
The load of device drift region can be improved by improving doping concentration and the thickness of charge storage layer by inventing the device architecture proposed
Sub- concentration distribution is flowed, and then improves the tradeoff between device forward conduction voltage drop Vceon and turn-off power loss Eoff, is obtained more
Wide short-circuit safety operation area (SCSOA)；Meanwhile it can be to avoid big MOS structure ditch using device architecture proposed by the present invention
Track density advantageously reduces the saturation current density of device, can further improve the short-circuit safety operation area of device
(SCSOA).It is connect with collecting zone and the effective of emitter region in addition, the existing presence of shield trenches structure reduces trench gate structure
Contacting surface accumulate, and trench gate structure with shielding ditch wipe structure formed big gate-emitter capacitance it is in parallel get on also reduce grid
Pole-emitter capacity further improves device to reduce the switching loss of device and the requirement to gate drive circuit ability
Compromise between part forward conduction voltage drop Vceon and turn-off power loss Eoff.Further, the present invention reduces the slot of trench gate structure
It is deep, so that it is less than the junction depth of charge storage layer, grid-collector capacitance can be further reduced in this way, improve device
Switching speed reduces the conduction loss Eon of device and the requirement to gate drive circuit ability.Further shield trenches structure
Presence emitter extracting area, reducing grid capacitance to drift region excess minority carrier when reducing forward conduction
Meanwhile the carrier concentration profile of drift region is improved, further improve device forward conduction voltage drop Vceon and turn-off power loss
Tradeoff between Eoff.In addition to this, production method provided by the invention need not increase additional processing step, with biography
Two-way CSTBT production methods of uniting are compatible with.
Compared with prior art, the beneficial effects of the present invention are：
The present invention avoids charge storage layer while realizing the symmetrical forward and reverse conducting of device with turn-off characteristic and mixes
Miscellaneous concentration and limitation of the thickness to device pressure resistance, not only increase the breakdown voltage of device, improve the reliability of device, Er Qiexian
Writing improves the carrier concentration profile that device drift is gone, and then improves forward conduction voltage drop Vceon and turn-off power loss Eoff
Between tradeoff, obtain broader short-circuit safety operation area；The invention avoids the gully density mistakes of device MOS structure
Greatly, to reduce the saturation current density of device, the short-circuit safety operation area (SCSOA) of device is further improved；This hair
The bright grid capacitance for significantly reducing device, especially grid-collector capacitance, to improve the switching speed of device, drop
The low switching loss of device and the requirement to deleting driving circuit ability, further improve the forward conduction voltage drop of device
Tradeoff between Vceon and turn-off power loss Eoff.In addition, production method provided by the invention need not increase additional work
Skill step is compatible with the two-way manufacturing process of CSTBT devices of tradition.
Description of the drawings
Fig. 1 is a quarter structure cell schematic diagram of the two-way trench gate charge storage type IGBT device of tradition；
Fig. 2 is that the two-way trench gate charge storage type IGBT device of tradition is formed before spacer medium layer and emitter metal layer
Structural schematic diagram；
Fig. 3 is that a quarter structure cell of the two-way trench gate charge storage type IGBT device of tradition shows along the section of AB lines
It is intended to；
Fig. 4 is a kind of a quarter member for two-way trench gate charge storage type IGBT device that the embodiment of the present invention 1 provides
Born of the same parents' structural schematic diagram；
Fig. 5 is that a kind of two-way trench gate charge storage type IGBT device that the embodiment of the present invention 1 provides forms spacer medium
Structural schematic diagram before layer and emitter metal layer；
Fig. 6 is a kind of a quarter member for two-way trench gate charge storage type IGBT device that the embodiment of the present invention 1 provides
Diagrammatic cross-section of born of the same parents' structure along AB lines；
Fig. 7 is a kind of a quarter member for two-way trench gate charge storage type IGBT device that the embodiment of the present invention 1 provides
Diagrammatic cross-section of born of the same parents' structure along A'B' lines；
Fig. 8 is a kind of a quarter member for two-way trench gate charge storage type IGBT device that the embodiment of the present invention 2 provides
Born of the same parents' structural schematic diagram；
Fig. 9 is that a kind of two-way trench gate charge storage type IGBT device that the embodiment of the present invention 2 provides forms spacer medium
Structural schematic diagram before layer and emitter metal layer；
Figure 10 is a kind of a quarter member for two-way trench gate charge storage type IGBT device that the embodiment of the present invention 2 provides
Diagrammatic cross-section of born of the same parents' structure along AB lines；
Figure 11 is a kind of a quarter member for two-way trench gate charge storage type IGBT device that the embodiment of the present invention 2 provides
Diagrammatic cross-section of born of the same parents' structure along A'B' lines；
Figure 12 is a kind of a quarter member for two-way trench gate charge storage type IGBT device that the embodiment of the present invention 3 provides
Born of the same parents' structural schematic diagram；
Figure 13 is that a kind of two-way trench gate charge storage type IGBT device that the embodiment of the present invention 3 provides forms spacer medium
Structural schematic diagram before layer and emitter metal layer；
Figure 14 is a kind of a quarter member for two-way trench gate charge storage type IGBT device that the embodiment of the present invention 3 provides
Diagrammatic cross-section of born of the same parents' structure along AB lines；
Figure 15 is a kind of a quarter member for two-way trench gate charge storage type IGBT device that the embodiment of the present invention 3 provides
Diagrammatic cross-section of born of the same parents' structure along A'B' lines；
Figure 16 is a kind of a quarter member for two-way trench gate charge storage type IGBT device that the embodiment of the present invention 4 provides
Born of the same parents' structural schematic diagram；
Figure 17 is that a kind of two-way trench gate charge storage type IGBT device that the embodiment of the present invention 4 provides forms spacer medium
Structural schematic diagram before layer and emitter metal；
Figure 18 is a kind of a quarter member for two-way trench gate charge storage type IGBT device that the embodiment of the present invention 4 provides
Diagrammatic cross-section of born of the same parents' structure along AB lines；
Figure 19 is a kind of a quarter member for two-way trench gate charge storage type IGBT device that the embodiment of the present invention 4 provides
Diagrammatic cross-section of born of the same parents' structure along A'B' lines；
Figure 20 is a kind of a quarter member for two-way trench gate charge storage type IGBT device that the embodiment of the present invention 5 provides
Born of the same parents' structural schematic diagram；
Figure 21 is that a kind of two-way trench gate charge storage type IGBT device that the embodiment of the present invention 5 provides forms spacer medium
Structural schematic diagram before layer and emitter metal；
Figure 22 is a kind of a quarter member for two-way trench gate charge storage type IGBT device that the embodiment of the present invention 5 provides
Diagrammatic cross-section of born of the same parents' structure along AB lines；
Figure 23 is a kind of a quarter member for two-way trench gate charge storage type IGBT device that the embodiment of the present invention 5 provides
Diagrammatic cross-section of born of the same parents' structure along A'B' lines；
Figure 24 is a kind of a quarter member for two-way trench gate charge storage type IGBT device that the embodiment of the present invention 6 provides
Born of the same parents' structural schematic diagram；
Figure 25 is that a kind of two-way trench gate charge storage type IGBT device that the embodiment of the present invention 6 provides forms spacer medium
Structural schematic diagram before layer and emitter metal；
Figure 26 is a kind of a quarter member for two-way trench gate charge storage type IGBT device that the embodiment of the present invention 6 provides
Diagrammatic cross-section of born of the same parents' structure along AB lines；
Figure 27 is a kind of a quarter member for two-way trench gate charge storage type IGBT device that the embodiment of the present invention 6 provides
Diagrammatic cross-section of born of the same parents' structure along A'B' lines；
Figure 28 be the embodiment of the present invention 1 production method in formed shield trenches structure groove after a quarter cellular
Structural schematic diagram；
Figure 29 be the embodiment of the present invention 1 production method in formed bucking electrode dielectric layer after a quarter structure cell
Schematic diagram；
Figure 30 be the embodiment of the present invention 1 production method in formed bucking electrode after a quarter structure cell signal
Figure；
Figure 31 be the embodiment of the present invention 1 production method in formed trench gate structure groove after a quarter cellular knot
Structure schematic diagram；
Figure 32 be the embodiment of the present invention 1 production method in formed gate dielectric layer after a quarter structure cell signal
Figure；
Figure 33 be the embodiment of the present invention 1 production method in formed gate electrode after a quarter structure cell schematic diagram；
Figure 34 be the embodiment of the present invention 1 production method in form a quarter member after N+ emitter region and P+ emitter region
Born of the same parents' structural schematic diagram；
Figure 35 be the embodiment of the present invention 1 production method in formed spacer medium layer after a quarter structure cell signal
Figure；
Figure 36 be the embodiment of the present invention 1 production method in formed emitter metal after a quarter structure cell signal
Figure；
Figure 37 be the embodiment of the present invention 1 production method in complete a quarter structure cell signal after whole processes
Figure；
Figure 38 be the embodiment of the present invention 3 production method in formed trench gate structure groove after a quarter cellular knot
Structure schematic diagram；
Figure 39 be the embodiment of the present invention 3 production method in formed gate dielectric layer after a quarter structure cell signal
Figure；
Figure 40 be the embodiment of the present invention 3 production method in formed gate electrode after a quarter structure cell schematic diagram；
Figure 41 be the embodiment of the present invention 3 production method in formed shield trenches structure groove after a quarter cellular
Structural schematic diagram；
Figure 42 be the embodiment of the present invention 3 production method in formed P-type layer after a quarter structure cell schematic diagram；
Figure 43 be the embodiment of the present invention 3 production method in formed gate dielectric layer after a quarter structure cell signal
Figure；
Figure 44 be the embodiment of the present invention 3 production method in form four after gate electrode, N+ emitter region and P+ emitter region
/ mono- cellular structural schematic diagram；
Figure 45 be the embodiment of the present invention 3 production method in form a quarter cellular after N+ emitter region and P+ emitter region
Structural schematic diagram；
Figure 46 be the embodiment of the present invention 3 production method in formed spacer medium layer after a quarter structure cell signal
Figure；
Figure 47 be the embodiment of the present invention 3 production method in formed emitter metal after a quarter structure cell signal
Figure；
Figure 48 be the embodiment of the present invention 3 production method in complete a quarter structure cell signal after whole processes
Figure；
In figure：1 is front side emitter pole metal, and 2 be front spacer medium layer, and 3 be front N+ emitter region, and 4 send out for front P+
Area is penetrated, 5 be positive p-type base area, and 6 be positive N-type charge storage layer, and 71 be front bucking electrode, and 72 are situated between for positive shield trenches
Matter layer, 81 be grid electrode front electrode, and 82 be front gate dielectric layer, and 83 be front Split Electrode, and 84 be front Split Electrode medium
Layer, 9 be N-type drift region, and 10 be positive first P-type layer, and 11 be positive second P-type layer, and 21 be back side emitter pole metal, and 22 be the back of the body
Face spacer medium layer, 23 be back side N+ emitter region, and 24 be back side P+ emitter region, and 25 be back side p-type base area, and 26 be back side N-type electricity
Lotus accumulation layer, 271 be back side bucking electrode, and 272 shield trench dielectric layer for the back side, and 281 be back gate electrode, and 282 be the back of the body
Face gate dielectric layer, 283 be back side Split Electrode, and 284 be back side Split Electrode dielectric layer, and 210 be back side P-type layer, and 211 be the back side
Second P-type layer.
Specific implementation mode
The principle of the present invention and characteristic are explained in detail with specific embodiment with reference to the accompanying drawings of the specification：
Identical label indicates same or similar component or element in the accompanying drawings.Two-way groove provided by the invention
Grid charge storage type IGBT device can be N-channel device, can also be P-channel device, be carried out by taking N-channel device as an example below
Illustrate, one of ordinary skill in the art can understand that the structure of P-channel device and work are former on the basis of open N-channel device
Reason.
Embodiment 1：
The present invention provides a kind of two-way trench gate charge storage type IGBT, and a quarter cellular is as shown in figure 4, along AB lines
It is as shown in Figure 6 and Figure 7 with the section of A'B' lines, establish three-dimensional system of coordinate using any inflection point of a quarter cellular as origin, four points
One of the bottom surface of cellular intersect at two sides of the inflection point respectively as x-axis and z-axis, the excessively described inflection point and perpendicular to the bottom
The straight line in face is as y-axis, and x, y, the direction of z-axis is referring to Fig. 4；
The a quarter cellular includes the MOS structure for being symmetricly set on 9 front and back of N-type drift region；Its feature exists
In：Positive MOS structure includes front side emitter pole metal 1, front spacer medium layer 2, front trench gate structure, positive shield trenches
Structure, front N+ emitter region 3, front P+ emitter region 4, positive p-type base area 5 and positive N-type charge storage layer 6；Back side MOS structure
Including back side emitter pole metal 21, back side isolated dielectric layer 22, backside trench grid structure, back side shielding groove structure, back side N-type
Emitter region 23, back side p-type emitter region 24, back side p-type base area 25 and back side N-type charge storage layer 26；
In the front MOS structure, positive N-type charge storage layer 6 is located at the top layer of the positive N-type drift region 9；It is described
Positive p-type base area 5 is located at the top layer of positive N-type charge storage layer 6；The front P+ emitter region 4 and front N+ emitter region 3 are mutual
Independence and the top layer for being disposed in parallel in positive p-type base area 5；
The top layer of the front N-type drift region 9 has front trench gate structure and front shielding groove structure, the front
Trench gate structure and front shielding groove structure are inconsistent along the direction that device top layer extends；The front trench gate structure includes
Positive gate electrode 81 and front gate dielectric layer 82, the positive gate electrode 81 are passed down through positive N+ emitter region 3 and positive p-type base
Area 5 enters in positive N-type charge storage layer 6, i.e., the depth of positive gate electrode 81 is less than the junction depth of positive N-type charge storage layer 6,
It is connected by front gate dielectric layer 82 between positive gate electrode 81 and positive p-type base area 5 and positive N-type charge storage layer 6, and
Positive gate electrode 81 extends to the other end along z-axis from device one end, and 81 upper surface of positive gate electrode passes through front spacer medium layer 2
It is connected with front side emitter pole metal 1；The front shielding groove structure includes that front bucking electrode 71 and positive shield trenches are situated between
Matter layer 72, the front bucking electrode 71 are passed down through positive P+ emitter region 4, positive p-type base area 5 and positive N-type charge storage
Layer 6 enters in positive N-type drift region 9, i.e., the depth of front bucking electrode 71 is more than the junction depth of positive N-type charge storage layer 6, just
Face bucking electrode 71 extends to the front gate dielectric layer 82 of 81 side of positive gate electrode, front shielding electricity along x-axis from device one end
Pole 71 is isolated with positive gate electrode 81 by front gate dielectric layer 82 or shield trenches dielectric layer 72, front bucking electrode 71
With positive N+ emitter region 3, front P+ emitter region 4, positive p-type base area 5, positive N-type charge storage layer 6 and positive N-type drift region 9
Between trench dielectric layer 72 shielded by front be connected, front bucking electrode 71 and 1 equipotential of front side emitter pole metal；The back of the body
Face MOS structure is identical as front N-channel MOS structure, and positive MOS structure is with back side MOS structure along the transverse direction of N-type drift region 9
Line mirror symmetry.
In the present embodiment, the size of the front P+ emitter region 4 and back side P+ emitter region 24 along the z-axis direction be 0.2~
0.5um, size, that is, junction depth along the y-axis direction is 0.1~0.3um；The front p-type base area 5 and back side p-type base area 25 are along x-axis
The size in direction is 2~10um, and size, that is, junction depth along y-axis is 0.3~1um；The front N-type charge storage layer 6 and back side N
Type charge storage layer 26 is 0.5~1um along the size of y-axis；The groove depth of the front trench gate structure and backside trench grid structure
For 0.6~2um；The groove depth of the front shielding groove structure and back side shielding groove structure is 4~8um.
The shield trenches structure that the present embodiment proposes is different from existing with position relationship of the trench gate structure on three dimensions
Both have in structure and to extend in parallel, the electrode in shield trenches structure and emitter metal equipotential can equivalent offer negative electrical charge,
When the PN junction that the second conductive type semiconductor charge storage layer and the first conductive type semiconductor base area are formed is reverse-biased, second leads
Negative electrical charge in electric type semiconductor charge storage layer in positively charged ionized donor and shield trenches forms charge compensation, and this
When positively charged ionized donor generate and be directed toward the transverse electric field of negative electrical charge to reduce the longitudinal electric field of device, while by front grid
Electrode 81 and back side gate electrode 281 are exposed to the faces xoy of device, are conducive to extraction electrode when follow-up chip package.
Embodiment 2：
The present invention provides a kind of two-way trench gate charge storage type IGBT, and a quarter cellular is as shown in figure 8, along AB lines
It is as shown in Figure 10 and Figure 11 with the section of A'B' lines, establish three-dimensional system of coordinate using any inflection point of a quarter cellular as origin, four
The bottom surface of/mono- cellular intersects at two sides of the inflection point respectively as x-axis and z-axis, the excessively described inflection point and perpendicular to described
The straight line of bottom surface is as y-axis, and x, y, the direction of z-axis is referring to Fig. 8；
Compared with Example 1, this implementation the difference is that：The first P is introduced in the bottom of front shielding groove structure
Type layer 10, the first P-type layer 10 are connect with gate electrode 81 by gate dielectric layer 82, and the back side shields groove structure and positive shield trenches
Structure is identical and transversal centerline mirror symmetry along N-type drift region 9, and in addition to this remaining structure is same as Example 1, this reality
It applies in example, the junction depth of the first P-type layer 10 is 0.5~1 μm.
Preferably, positive first P-type layer 10 is extended laterally to both sides under positive N-type charge storage layer 6
In the N-type drift region 9 of side, back side shielding groove structure is identical as front shielding groove structure and along the transverse direction of N-type drift region 9
Line mirror symmetry.The influence of negative electrical charge in N-type charge storage layer 6 and back side N-type charge storage layer 26 can be shielded based on this,
And grid capacitance is further reduced, while also contributing to improve the electric field concentration effect of channel bottom, improves device
Breakdown voltage and reliability.
Embodiment 3：
The present invention provides a kind of two-way trench gate charge storage type IGBT, and a quarter cellular is as shown in figure 12, along AB
The section of line and A'B' lines is as shown in Figure 14 and Figure 15, and three-dimensional system of coordinate is established as origin using any inflection point of a quarter cellular,
The bottom surface of a quarter cellular intersects at two sides of the inflection point respectively as x-axis and z-axis, the excessively described inflection point and perpendicular to institute
The straight line of bottom surface is stated as y-axis, x, y, the direction of z-axis is referring to Figure 12；
Compared with Example 2, this implementation the difference is that：In positive MOS structure, front bucking electrode 71 is along x-axis
The other end is extended to from device one end, positive gate electrode 81 extends to 71 side of front bucking electrode along z-axis from device one end
Front shielding trench dielectric layer 72, front bucking electrode 71 shield trench dielectric layer 72 by front with positive gate electrode 81 and connect
It connects, the back side shields groove structure transversal centerline mirror symmetry identical and along N-type drift region 9 as front shielding groove structure, removes
Remaining structure is same as Example 2 except this.
The depth that the present embodiment is extended along the z-axis direction by reducing trench gate structure, the raceway groove for reducing MOS structure are close
Degree, to reduce the saturation current density of device, improves the short-circuit safety operation area SCSOA characteristics of device.
Embodiment 4：
The present invention provides a kind of trench gate charge storage type IGBT, and a quarter cellular is as shown in figure 16, along AB lines and
The section of A'B' lines is as shown in Figure 18 and Figure 19, and three-dimensional system of coordinate is established using any inflection point of a quarter cellular as origin, four points
One of the bottom surface of cellular intersect at two sides of the inflection point respectively as x-axis and z-axis, the excessively described inflection point and perpendicular to the bottom
The straight line in face is as y-axis, and x, y, the direction of z-axis is referring to Figure 16；
Compared with Example 3, this implementation the difference is that：The 2nd P of front is introduced in front trench gate structure bottom
Type layer 11, overleaf trench gate structure bottom introducing the second P-type layer of the back side 211, positive second P-type layer 11 are electric with front grid
Pole 81 is connected by front gate dielectric layer 82, and the second P-type layer of the back side 211 passes through back side gate medium with back side gate electrode 281
Layer 282 connects, and in addition to this remaining structure is same as Example 3, and the junction depth of the second P-type layer 11,211 is in the present embodiment
0.5~1 μm.
Preferably, second conductive type semiconductor layer 2 11,211 extends laterally to front first to both sides
The first of 26 top of 6 lower section of conductive type semiconductor charge storage layer or the back side the first conductive type semiconductor charge storage layer
In conductive type semiconductor drift region 9, the influence of negative electrical charge in N-type charge storage layer 6,26 is shielded with this, and further
Grid capacitance is reduced, while also contributing to improve channel bottom electric field concentration, improves the breakdown voltage of device and reliable
Property.
Embodiment 5：
The present invention provides a kind of trench gate charge storage type IGBT, and a quarter cellular is as shown in figure 20, along AB lines and
The section of A'B' lines is as shown in Figure 22 and Figure 23, and three-dimensional system of coordinate is established using any inflection point of a quarter cellular as origin, four points
One of the bottom surface of cellular intersect at two sides of the inflection point respectively as x-axis and z-axis, the excessively described inflection point and perpendicular to the bottom
The straight line in face is as y-axis, and x, y, the direction of z-axis is referring to Figure 20；
Compared with Example 3, this implementation the difference is that：Front Split Electrode is introduced in the trench gate structure of front
83 and thick front Split Electrode dielectric layer 84, back side Split Electrode 283 and the thick back side are overleaf introduced in trench gate structure
Split Electrode dielectric layer 284, Split Electrode 83,283 and emitter metal 1,21 equipotentials, Split Electrode dielectric layer 84,284
Thickness is more than the thickness of gate dielectric layer 82,282.The present embodiment reduces the grid electricity of device by introducing Split Electrode 83,283
Hold, to improve the switching speed of device and reduce switching loss, and thick Split Electrode dielectric layer 84,284 improves
Device electric breakdown strength improves the reliability of device.
Embodiment 6：
The present invention provides a kind of trench gate charge storage type IGBT, and a quarter cellular is as shown in figure 24, along AB lines and
The section of A'B' lines is as shown in Figure 26 and Figure 27, and three-dimensional system of coordinate is established using any inflection point of a quarter cellular as origin, four points
One of the bottom surface of cellular intersect at two sides of the inflection point respectively as x-axis and z-axis, the excessively described inflection point and perpendicular to the bottom
The straight line in face is as y-axis, and x, y, the direction of z-axis is referring to Figure 24；
Compared with Example 5, this implementation the difference is that：Front the is introduced in front division trench gate structure bottom
Two P-type layers 11 overleaf divide trench gate structure bottom and introduce the second P-type layer of the back side 211, the second P-type layer 11,211 and division
Electrode 83,283 is connected by Split Electrode dielectric layer 84,284, and the junction depth of the second P-type layer 11,211 is 0.5~1 μm.This implementation
The characteristics of example combines embodiment 4 and embodiment 5 and good characteristic.
Embodiment 7：
Compared with Example 3, this implementation the difference is that：The back side shields groove structure and front shielding groove structure
Transversal centerline crossed-symmetrical identical and along N-type semiconductor drift region 9, remaining structure are same as Example 3.The property of device
Also it can show that the performance of device is identical with embodiment 3.
Embodiment 8：
The present embodiment is illustrated by taking the trench gate charge storage type IGBT of 1200V voltage class as an example, according to this field
Common sense can prepare the device of different performance parameter according to actual demand.
A kind of production method of two-way trench gate charge storage type IGBT, which is characterized in that include the following steps：
Step 1：N-type drift region 9 of the monocrystalline silicon piece as device is lightly doped using two identical N-types, selected silicon chip
Thickness is 300~600 μm, doping concentration 1013~1014A/cm3；
Step 2：One layer of field oxide is grown in two silicon chip surfaces respectively using identical technique, is lithographically derived active
Area, one layer of pre-oxidation layer of regrowth, is made N-type charge storage layer 6, the energy of ion implanting is by ion implanting N-type impurity
200~500keV, implantation dosage 1013~1014A/cm2；It is miscellaneous by ion implanting p-type above N-type charge storage layer 6 again
Matter simultaneously makes annealing treatment obtained p-type base area 5, and the energy of ion implanting is 60~120keV, implantation dosage 1013~1014A/cm2,
Annealing temperature is 1100~1150 DEG C, and annealing time is 10~30 minutes；
Step 3：Identical technique is used to be protected respectively for the TEOS of 700~1000nm in two silicon chip surface deposition thicknesses
Layer makes window by lithography and carries out groove silicon etching, and then etching forms first groove in N-type drift region 9, as shown in Fig. 16,
First groove extends to device left end from device right end, and the depth of first groove is more than the junction depth of N-type charge storage layer 6；
Step 4：In 1050 DEG C~1150 DEG C of O2Under atmosphere, formed respectively in first groove inner wall using identical technique
Dielectric layer is as bucking electrode dielectric layer 72, as shown in Fig. 17；Then at 750 DEG C~950 DEG C, in the first groove
Deposition electrode material forms bucking electrode 71, and the present embodiment is using polycrystalline silicon material as bucking electrode material, the first ditch
The bucking electrode dielectric layer 72 of bucking electrode 71 and its side in slot is formed plays shielding work to the electric field of N-type charge storage layer 6
Shield trenches structure, shield trenches structure are as shown in Fig. 18；
Step 5：Identical technique is used to be protected respectively for the TEOS of 700~1000nm in two silicon chip piece surface deposition thickness
Sheath makes window by lithography and carries out groove silicon etching, and then etching forms second groove in N-type drift region 9, such as 19 institute of attached drawing
To show, second groove extends to rear end from the front end of device, and second groove is spatially mutually perpendicular to first groove and is not connected to mutually,
The two is isolated by gate dielectric layer 82；The depth of the second groove is less than the junction depth of N-type charge storage layer 6；
Step 6：In 1050 DEG C~1150 DEG C of O2Under atmosphere, formed respectively in second groove inner wall using identical technique
Dielectric layer is as gate dielectric layer 82, as shown in Fig. 20；Then at 750 DEG C~950 DEG C, grid are deposited in the second groove
Electrode material as gate electrode 81, the present embodiment using polycrystalline silicon material as gate material, the gate electrode in second groove
81 and its gate dielectric layer 82 of side form trench gate structure, trench gate structure is as shown in Fig. 21；
Step 7：Using identical photoetching, ion implantation technology, respectively on two silicon chips first groove and second groove it
Between 5 top layer of p-type base area be injected separately into N-type impurity and p type impurity, the energy of ion implanting N-type impurity is 30~60keV, note
It is 10 to enter dosage15~1016A/cm2, the energy of ion implanting p type impurity is 60~80keV, implantation dosage 1015~1016
A/cm2, annealing temperature is 900 DEG C, and the time is 20~30 minutes, and the N+ emitter region 3 and P+ for contacting with each other and being set up in parallel is made
Emitter region 4；As shown in Fig. 22,3 left side of the N+ emitter region is connected along device top layer longitudinal direction with gate dielectric layer 82, the back side
Side is connected along device top layer horizontal direction with shield trenches dielectric layer 72；The back side of the P+ emitter region 4 is along device transverse direction side
It is connected to shield trenches dielectric layer 72；
Step 8：As shown in Fig. 23, it using identical technique respectively in two device surface dielectric layer depositeds, and uses
Photoetching, etching technics form spacer medium layer 2 in gate electrode 81 and 82 upper surface of gate dielectric layer；
Step 9：As shown in Fig. 24, metal is deposited in two device surfaces respectively using identical technique, and uses light
It carves, etching technics, on spacer medium layer 2, N+ emitter region 3, P+ emitter region 4 and bucking electrode 71 and shield trenches dielectric layer 72
Surface forms emitter metal 1；
Step 10：Two silicon chips are overturn, the thickness of two silicon chips is thinned respectively using identical technique, it is then that two panels is complete
Exactly the same silicon chip is back-to-back to bond together to form two-way CSTBT devices using bonding technology by the two, as shown in Fig. 25, so far complete
Preparation in pairs to trench gate charge storage type IGBT.
It should be noted that in the preparation method that this implementation provides, the lateral position of device surface corresponds to Figure of description
Show that the x-axis direction of coordinate system, the lengthwise position of device surface correspond to the z-axis direction that Figure of description shows coordinate system, hereafter
It repeats no more.
Further, trench gate structure and the sequence of shield trenches structure are formed in the present invention to be exchanged.
Further, groove structure is formed during preparing in single side MOS structure, in the present invention and forms N-type charge
Accumulation layer 6,26 and the sequence of p-type base area 5,25 can exchange.
Further, during preparing in single side MOS structure, the present invention is by changing grooving mode so that shielding ditch
The x-axis direction along device top layer horizontal direction such as attached drawing 11 of bucking electrode 71,271 extends to the other end from one end in slot structure,
And gate electrode 81,281 extends to shielding in z-axis direction along device top layer longitudinal direction such as attached drawing 9 from one end in trench gate structure
Trench dielectric layer 72,272, and both gate electrode 81,281 and bucking electrode 71,271 pass through shield trenches dielectric layer 72,272
Isolation.
Further, as shown in attached drawing 26~36, during preparing in single side MOS structure, can increase in step 4 of the present invention
Ion implanting step is added to form P-type layer 10,210 in the bottom of shield trenches structure, you can to obtain the device illustrated such as embodiment 2
Structure.
Further, dielectric layer 2,22, shield trenches dielectric layer 72,272 and gate dielectric layer 82,282 are isolated in the present invention
Material same material may be used can also use combination of materials not of the same race.
Above-mentioned device architecture and preparation method are to illustrate by taking the N-channel IGBT device as an example, but the present disclosure applies equally to P
The preparation of raceway groove IGBT device repeats no more in literary.
Be above the preferred embodiment of the present invention, by above description content, those skilled in the art can without departing from
In the range of technical thought of the invention, diversified change and modification are carried out.Therefore the technical scope of the present invention is not
It is confined to the content of specification, it is all according to equivalent changes and modifications made by scope of the present invention patent, it should all belong to the present invention
Covering scope.
Claims (10)
1. a kind of two-way trench gate charge storage type IGBT, a quarter cellular includes being symmetricly set on the first conduction type half
The MOS structure of conductor drift region (9) front and back；It is characterized in that：Positive MOS structure include front side emitter pole metal (1),
Front spacer medium layer (2), front trench gate structure, front shielding groove structure, positive first conductive type semiconductor transmitting
Area (3), positive second conductive type semiconductor emitter region (4), positive second conductive type semiconductor base area (5) and front first
Conductive type semiconductor charge storage layer (6)；Back side MOS structure includes back side emitter pole metal (21), back side isolated dielectric layer
(22), backside trench grid structure, back side shielding groove structure, the back side the first conductive type semiconductor emitter region (23), the back side the
Two conductive type semiconductor emitter region (24), the back side the second conductive type semiconductor base area (25) and the first conduction type of the back side half
Conductor charge accumulation layer (26)；
In the front MOS structure, it is conductive that positive first conductive type semiconductor charge storage layer (6) is located at described positive first
The top layer of type semiconductor drift region (9)；The positive second conductive type semiconductor base area (5) is located at positive first conductive-type
The top layer of type semiconductor charge storage layer (6)；The positive second conductive type semiconductor emitter region (4) and front first are conductive
Type semiconductor emitter region (3) is mutual indepedent and is disposed in parallel in the top layer of positive second conductive type semiconductor base area (5)；
The top layer of the positive first conductive type semiconductor drift region (9) has front trench gate structure and positive shield trenches
Structure, the front trench gate structure and front shielding groove structure are inconsistent along the direction that device top layer extends；The front
Trench gate structure includes positive gate electrode (81) and front gate dielectric layer (82), and the positive gate electrode (81) is passed down through front
First conductive type semiconductor emitter region (3) and positive second conductive type semiconductor base area (5) enter positive first conductive-type
In type semiconductor charge storage layer (6), positive gate electrode (81) and positive first conductive type semiconductor emitter region (3), front
Pass through front grid between second conductive type semiconductor base area (5) and positive first conductive type semiconductor charge storage layer (6)
Dielectric layer (82) is connected, and positive gate electrode (81) upper surface passes through front spacer medium layer (2) and front side emitter pole metal (1) phase
Even；The front shielding groove structure includes front bucking electrode (71) and front shielding trench dielectric layer (72), the front
Bucking electrode (71) is passed down through positive second conductive type semiconductor emitter region (4), positive second conductive type semiconductor base
Area (5) and positive first conductive type semiconductor charge storage layer (6) enter positive first conductive type semiconductor drift region (9)
In, front bucking electrode (71) passes through front gate dielectric layer (82) or shield trenches dielectric layer (72) with positive gate electrode (81)
It is isolated, front bucking electrode (71) is partly led with positive first conductive type semiconductor emitter region (3), positive second conduction type
Body emitter region (4), positive second conductive type semiconductor base area (5), positive first conductive type semiconductor charge storage layer (6)
Trench dielectric layer (72) is shielded between positive first conductive type semiconductor drift region (9) by front to be connected, front shielding
Electrode (71) and front side emitter pole metal (1) equipotential；The back side MOS structure is identical as positive MOS structure.
2. a kind of two-way trench gate charge storage type IGBT according to claim 1, it is characterised in that：First conduction type
Semiconductor is P-type semiconductor, and the first conductive type semiconductor is N-type semiconductor；Or first conductive type semiconductor be N-type half
Conductor, the first conductive type semiconductor are P-type semiconductor.
3. a kind of two-way trench gate charge storage type IGBT according to claim 2, it is characterised in that：With a quarter member
Any inflection point of born of the same parents is that origin establishes three-dimensional system of coordinate, and two sides that the bottom surface of a quarter cellular intersects at the inflection point are made respectively
For x-axis and z-axis, the excessively described inflection point and perpendicular to the straight line of the bottom surface as y-axis, then gate electrode (81,281) is along x-axis or z-axis
Extend to the other end from device one end, bucking electrode (71,271) along z-axis or x-axis from device one end extend to gate electrode (81,
281) gate dielectric layer (82,281) of side, gate electrode (81,281) and the extending direction of bucking electrode (71,271) are inconsistent.
4. a kind of two-way trench gate charge storage type IGBT according to claim 2, it is characterised in that：With a quarter member
Any inflection point of born of the same parents is that origin establishes three-dimensional system of coordinate, and two sides that the bottom surface of a quarter cellular intersects at the inflection point are made respectively
For x-axis and z-axis, the excessively described inflection point and perpendicular to the straight line of the bottom surface as y-axis, then bucking electrode (71,271) is along x-axis or z
Axis extends to the other end from device one end, and gate electrode (81,281) extends to bucking electrode along z-axis or x-axis from device one end
The shield trenches dielectric layer (72,272) of (71,271) side, the extension side of bucking electrode (71,271) and gate electrode (81,281)
To inconsistent.
5. a kind of two-way trench gate charge storage type IGBT according to claim 1, it is characterised in that：The front groove
Grid structure is front division trench gate structure.
6. a kind of two-way trench gate charge storage type IGBT according to claim 1, it is characterised in that：Ditch is shielded in front
Slot structure bottom also has front second conductive type semiconductor layer (10), and overleaf shield trenches structural top also has the back side
Second conductive type semiconductor layer (210), the second conductive type semiconductor layer (10,210) extend laterally to front the
Below one conductive type semiconductor charge storage layer (6) or above the back side the first conductive type semiconductor charge storage layer (26)
The first conductive type semiconductor drift region (9) in.
7. according to a kind of two-way trench gate charge storage type IGBT of claim 2 to 6 any one of them, it is characterised in that：Just
Face MOS structure and back side MOS structure can along the transversal centerline mirror symmetry of the first conductive type semiconductor drift region (9),
It can be along the transversal centerline crossed-symmetrical of the first conductive type semiconductor drift region (9).
8. a kind of production method of two-way trench gate charge storage type IGBT, which is characterized in that include the following steps：
Step 1：Make two identical first conductive type semiconductor drift regions (9)；
Step 2：Using identical pre-oxidation, photoetching, etching, ion implanting and high-temperature annealing process, led respectively at two first
The front of electric type semiconductor drift region (9) makes the first conductive type semiconductor charge storage layer (6,26) and is led positioned at second
The first conductive type semiconductor base area (5,25) of electric type semiconductor charge storage layer (6,26) top layer；
Step 3：Using identical photoetching, etching, thermal oxide, depositing technics, floated respectively in two the first conductive type semiconductors
It moves etching on area (9) and forms first groove, the depth of the first groove is more than the first conductive type semiconductor charge storage layer
The junction depth of (6,26) and along device top layer horizontal direction extend；First groove inner wall formed shield trenches dielectric layers (72,
272), then in first groove deposition of electrode material formed bucking electrode (71,271), the bucking electrode (71,271) and
The shield trenches dielectric layer (72,272) of its side forms shield trenches structure；
Step 4：Using identical photoetching, etching, thermal oxide, depositing technics, respectively in two the first conductive type semiconductor electricity
Etching forms second groove in lotus accumulation layer (6,26), and the depth of the second groove is less than the first conductive type semiconductor charge
The junction depth of accumulation layer (6,26) and extend along device top layer longitudinal direction, the mutual not phase of the second groove and the first groove
It is logical；Gate dielectric layer (82,282) is formed in first groove inner wall, then deposit gate material forms gate electrode in the trench
The gate dielectric layer (82,282) of (81,281), the gate electrode (81,281) and its side forms trench gate structure；Step 5：It adopts
With identical photoetching, etching, ion implanting and high-temperature annealing process, respectively two the second conductive type semiconductor base areas (5,
25) top layer makes mutual indepedent and the second conductive type semiconductor emitter region (4,24) being set up in parallel and the first conduction type
Semiconductor emission area (3,23)；First conductive type semiconductor emitter region (the 3,23) side is logical along device top layer longitudinal direction
It crosses gate dielectric layer (82,282) with gate electrode (81,281) to be connected, the other side passes through shield trenches along device top layer horizontal direction
Dielectric layer (72,272) is connected with bucking electrode (71,271), the second conductive type semiconductor emitter region (4,24) side edge
Device top layer horizontal direction is connected by shield trenches dielectric layer (72,272) with bucking electrode (71,271)；
Step 6：Using identical photoetching, etching and depositing technics, respectively in two gate electrodes (81,281) and gate dielectric layer
The upper surface of (82,282) forms spacer medium layer (2,22)；
Step 7：Surface deposition metal is led in spacer medium layer (2,22), first respectively using identical photoetching, etching technics
Electric type semiconductor emitter region (3,23), the second conductive type semiconductor emitter region (4,24), bucking electrode (71,271) and screen
It covers and forms emitter metal (1,21) on trench dielectric layer (72,272)；
Step 8：Semiconductor chip is overturn, the thickness of two semiconductor chips is thinned respectively using identical technique, then by the two
Identical semiconductor chip is back-to-back to form two-way trench gate charge storage type IGBT device using bonding technology, so far completes
The preparation of device.
9. the production method of two-way trench gate charge storage type IGBT according to claim 8 a kind of, it is characterised in that：The
One conductive type semiconductor is P-type semiconductor, and the first conductive type semiconductor is N-type semiconductor；Or first conduction type half
Conductor is N-type semiconductor, and the first conductive type semiconductor is P-type semiconductor.
10. the production method of two-way trench gate charge storage type IGBT according to claim 9 a kind of, it is characterised in that：
In the step 3 and step 4, by changing grooving mode so that trench gate structure extends along device top layer from device one end
To the device other end and block extension or shield trenches structure of the shield trenches structure along device top layer along device top layer from device
Part one end extends to the device other end and blocks trench gate structure along the extension of device top layer.
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| CN110444471A (en) * | 2019-08-22 | 2019-11-12 | 电子科技大学 | A kind of preparation method of 3 dimension separation gate groove charge storage type IGBT |
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| CN1738057A (en) * | 2004-08-18 | 2006-02-22 | 艾格瑞系统有限公司 | Metal-oxide-semiconductor device having an enhanced shielding structure |
| US20080017920A1 (en) * | 2006-01-05 | 2008-01-24 | Steven Sapp | Structure and method for improving shielded gate field effect transistors |
| CN102263133A (en) * | 2011-08-22 | 2011-11-30 | 无锡新洁能功率半导体有限公司 | Low-gate charge low-on resistance deep trench power metal oxide semiconductor field effect transistor (MOSFET) device and manufacturing method |
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|---|---|---|---|---|
| CN1738057A (en) * | 2004-08-18 | 2006-02-22 | 艾格瑞系统有限公司 | Metal-oxide-semiconductor device having an enhanced shielding structure |
| US20080017920A1 (en) * | 2006-01-05 | 2008-01-24 | Steven Sapp | Structure and method for improving shielded gate field effect transistors |
| CN102263133A (en) * | 2011-08-22 | 2011-11-30 | 无锡新洁能功率半导体有限公司 | Low-gate charge low-on resistance deep trench power metal oxide semiconductor field effect transistor (MOSFET) device and manufacturing method |
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