CN108428737B - 具有叉指型电极的半导体器件 - Google Patents
具有叉指型电极的半导体器件 Download PDFInfo
- Publication number
- CN108428737B CN108428737B CN201710975501.5A CN201710975501A CN108428737B CN 108428737 B CN108428737 B CN 108428737B CN 201710975501 A CN201710975501 A CN 201710975501A CN 108428737 B CN108428737 B CN 108428737B
- Authority
- CN
- China
- Prior art keywords
- electrode
- interdigital
- electrodes
- semiconductor device
- finger
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 238000009826 distribution Methods 0.000 abstract description 16
- 239000002184 metal Substances 0.000 abstract description 14
- 230000005684 electric field Effects 0.000 description 13
- 238000000034 method Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 230000000903 blocking effect Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000013461 design Methods 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- 238000013459 approach Methods 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 201000008000 3-methylcrotonyl-CoA carboxylase deficiency Diseases 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000004445 quantitative analysis Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41758—Source or drain electrodes for field effect devices for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
- H01L31/1085—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type the devices being of the Metal-Semiconductor-Metal [MSM] Schottky barrier type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (5)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201662409188P | 2016-10-17 | 2016-10-17 | |
US62/409,188 | 2016-10-17 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108428737A CN108428737A (zh) | 2018-08-21 |
CN108428737B true CN108428737B (zh) | 2022-06-21 |
Family
ID=61902895
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710975501.5A Active CN108428737B (zh) | 2016-10-17 | 2017-10-16 | 具有叉指型电极的半导体器件 |
Country Status (3)
Country | Link |
---|---|
US (1) | US10388743B2 (zh) |
CN (1) | CN108428737B (zh) |
CA (1) | CA2982580A1 (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111220767A (zh) * | 2018-11-23 | 2020-06-02 | 京元电子股份有限公司 | 用于生物芯片测试的弹性缓冲座及其测试模块与测试设备 |
CN112820784B (zh) * | 2020-11-24 | 2022-11-25 | 上海航天电子通讯设备研究所 | 一种垂直背入射同面电极高功率光导开关 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102013437A (zh) * | 2009-09-07 | 2011-04-13 | 西安捷威半导体有限公司 | 半导体器件及其制造方法 |
TW201203540A (en) * | 2010-07-02 | 2012-01-16 | Win Semiconductors Corp | Multi-gate semiconductor devices |
JP2013098222A (ja) * | 2011-10-28 | 2013-05-20 | Sanken Electric Co Ltd | 窒化物半導体装置 |
WO2015101973A1 (en) * | 2013-12-30 | 2015-07-09 | Visic Technologies Ltd. | Semiconductor device |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006156902A (ja) * | 2004-12-01 | 2006-06-15 | Mitsubishi Electric Corp | 高周波用半導体装置 |
JP2011060912A (ja) * | 2009-09-08 | 2011-03-24 | Toshiba Corp | 半導体装置 |
CN102269724B (zh) * | 2011-06-23 | 2012-11-28 | 西安交通大学 | 半导体气敏传感器的定向纳米纤维化三维立体叉指电极的制作方法 |
JP6338832B2 (ja) * | 2013-07-31 | 2018-06-06 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US9484471B2 (en) * | 2014-09-12 | 2016-11-01 | Qorvo Us, Inc. | Compound varactor |
US20170104064A1 (en) * | 2015-10-09 | 2017-04-13 | Sanken Electric Co., Ltd. | Nitride semiconductor device with asymmetric electrode tips |
-
2017
- 2017-10-13 US US15/783,888 patent/US10388743B2/en active Active
- 2017-10-16 CA CA2982580A patent/CA2982580A1/en not_active Abandoned
- 2017-10-16 CN CN201710975501.5A patent/CN108428737B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102013437A (zh) * | 2009-09-07 | 2011-04-13 | 西安捷威半导体有限公司 | 半导体器件及其制造方法 |
TW201203540A (en) * | 2010-07-02 | 2012-01-16 | Win Semiconductors Corp | Multi-gate semiconductor devices |
JP2013098222A (ja) * | 2011-10-28 | 2013-05-20 | Sanken Electric Co Ltd | 窒化物半導体装置 |
WO2015101973A1 (en) * | 2013-12-30 | 2015-07-09 | Visic Technologies Ltd. | Semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
US10388743B2 (en) | 2019-08-20 |
CA2982580A1 (en) | 2018-04-17 |
CN108428737A (zh) | 2018-08-21 |
US20180108743A1 (en) | 2018-04-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101106535B1 (ko) | 전력용 반도체 소자 및 그 제조방법 | |
EP1959498B1 (en) | High-voltage vertical FET | |
US8653583B2 (en) | Sensing FET integrated with a high-voltage transistor | |
CN109155338B (zh) | 使用主体区扩展的碳化硅金属氧化物半导体(mos)装置单元中的电场屏蔽 | |
JP5266240B2 (ja) | 半導体装置、トランジスタ及びダイオード | |
EP1959500A2 (en) | High-voltage vertical FET | |
CN108428737B (zh) | 具有叉指型电极的半导体器件 | |
JP2004297086A (ja) | 高スイッチングスピードのための横方向パワーmosfet | |
KR100903428B1 (ko) | 전압 균등 루프들을 구비한 페시베이션 구조 | |
US20190097005A1 (en) | Semiconductor Device Having Termination Trench | |
JP2005175425A (ja) | 絶縁ゲート型半導体装置 | |
WO2016070463A1 (zh) | 一种半导体器件及其制作方法 | |
CN109671774A (zh) | 半导体器件及其制造方法 | |
US8653600B2 (en) | High-voltage monolithic schottky device structure | |
CN116013960A (zh) | 一种沟槽型mosfet元胞结构及其制备方法 | |
CN100370624C (zh) | 增益可调制的半导体器件及具备它的逻辑电路 | |
KR102258644B1 (ko) | 개선된 게이트 유전 차폐를 갖는 실리콘 카바이드(SiC) 소자 | |
CN206471335U (zh) | 具有终端保护区的超结半导体器件 | |
JP2008187151A (ja) | 半導体装置とその製造方法 | |
JP6362925B2 (ja) | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 | |
CN203690304U (zh) | 纵向超结金属氧化物场效应晶体管 | |
US20200052105A1 (en) | Semiconductor structure with current flow path direction controlling | |
CN104201253B (zh) | 一种氮化镓器件及其制造方法 | |
KR20160016520A (ko) | 반도체 장치 | |
CN203883010U (zh) | 电路功率管结构 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20210729 Address after: 215125 room f405, No. 388 Ruoshui Road, Suzhou Industrial Park, Suzhou area, China (Jiangsu) pilot Free Trade Zone, Suzhou, Jiangsu Applicant after: Suzhou Quantum Semiconductor Co.,Ltd. Address before: Room 2, No. A19, Jiahua property, No. 3333, Hongmei Road, Minhang District, Shanghai 201103 Applicant before: Li Zhanming |
|
TA01 | Transfer of patent application right | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20240523 Address after: Room 601-2, Building 1, Suzhou Nanocity, No. 99 Jinjihu Avenue, Suzhou Industrial Park, Suzhou Area, China (Jiangsu) Pilot Free Trade Zone, Suzhou City, Jiangsu Province, 215000 Patentee after: Suzhou Liangxin Microelectronics Co.,Ltd. Country or region after: China Address before: 215125 room f405, No. 388 Ruoshui Road, Suzhou Industrial Park, Suzhou area, China (Jiangsu) pilot Free Trade Zone, Suzhou, Jiangsu Patentee before: Suzhou Quantum Semiconductor Co.,Ltd. Country or region before: China |