CN108321104B - Etching device with pipeline structure - Google Patents
Etching device with pipeline structure Download PDFInfo
- Publication number
- CN108321104B CN108321104B CN201810214433.5A CN201810214433A CN108321104B CN 108321104 B CN108321104 B CN 108321104B CN 201810214433 A CN201810214433 A CN 201810214433A CN 108321104 B CN108321104 B CN 108321104B
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- Prior art keywords
- unit
- reaction tank
- pipeline
- spraying
- liquid
- Prior art date
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- 238000005530 etching Methods 0.000 title claims abstract description 33
- 238000006243 chemical reaction Methods 0.000 claims abstract description 71
- 238000005507 spraying Methods 0.000 claims abstract description 52
- 238000004140 cleaning Methods 0.000 claims abstract description 38
- 239000007788 liquid Substances 0.000 claims abstract description 37
- 238000001914 filtration Methods 0.000 claims abstract description 9
- 235000012431 wafers Nutrition 0.000 claims description 31
- 239000000376 reactant Substances 0.000 abstract description 10
- 238000003486 chemical etching Methods 0.000 abstract description 8
- 239000000126 substance Substances 0.000 description 11
- 238000000605 extraction Methods 0.000 description 8
- 239000007921 spray Substances 0.000 description 7
- 230000010355 oscillation Effects 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 2
- 238000011010 flushing procedure Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000000844 transformation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
Abstract
The invention discloses an etching device with a pipeline structure, which comprises a reaction tank, a first pipeline, a second pipeline, a circulating cleaning unit and a spraying unit, wherein the circulating cleaning unit is communicated with the bottom of the reaction tank through the first pipeline, the circulating cleaning unit is communicated with the spraying unit through the second pipeline, the circulating cleaning unit is used for extracting liquid of the reaction tank and spraying the liquid from the spraying unit after filtering, and the spraying unit is arranged at a notch of the reaction tank and the spraying direction is directed at the notch of the reaction tank. According to the technical scheme, the solution in the reaction tank is extracted through the circulating cleaning unit, and the wafer after the reaction is washed after being filtered and cleaned, so that reactant residues on the wafer are avoided, and further the quality of chemical etching is improved.
Description
Technical Field
The present disclosure relates to etching apparatuses, and particularly to an etching apparatus with a pipeline structure.
Background
The wafer etching apparatus is an apparatus for etching a wafer by using a solution, and after the conventional wafer etching is completed, the wafer is generally lifted out of the etching solution in the reaction tank directly by a lifting tool. When the wafer is separated from the reaction tank, etching liquid is attached to the wafer wall, and chemical reactants are attached to the wafer due to the fact that the etching liquid is internally provided with the chemical reactants, so that the problem of chemical reactant deposition is caused.
Disclosure of Invention
Therefore, it is desirable to provide an etching apparatus with a pipeline structure, which solves the problem of reverse deposition of chemical reactants generated when the wafer is separated from the reaction tank in the conventional etching apparatus.
In order to achieve the above object, the present inventors provide an etching apparatus having a pipe structure, including a reaction tank, a first pipe, a second pipe, a circulation cleaning unit and a spray unit, wherein the circulation cleaning unit is communicated with the bottom of the reaction tank through the first pipe, the circulation cleaning unit is communicated with the spray unit through the second pipe, the circulation cleaning unit is used for extracting liquid from the reaction tank and spraying the liquid from the spray unit after filtering, and the spray unit is disposed at a notch of the reaction tank and the spray direction is directed at the notch of the reaction tank.
Further, the spraying unit comprises two mutually parallel spraying pipes, the spraying pipes are arranged on two sides of the notch of the reaction tank, and a row of spraying ports are arranged on the spraying pipes.
Further, the device also comprises an incidence unit, an overflow groove, a third pipeline and a fourth pipeline, wherein the incidence unit is arranged at the bottom of the reaction groove, the overflow groove is arranged at the periphery of the outer part of the reaction groove, the circulating cleaning unit is communicated with the overflow groove through the third pipeline, the circulating cleaning unit is communicated with the incidence unit through the fourth pipeline, and the circulating cleaning unit is used for extracting liquid of the overflow groove and spraying the liquid from the incidence unit.
Further, a first one-way valve with a circulation direction pointing to the incidence unit is arranged on the fourth pipeline, and a second one-way valve with a circulation direction pointing to the circulation cleaning unit is arranged on the first pipeline.
Compared with the prior art, the technical scheme is characterized in that the solution in the reaction tank is extracted through the circulating cleaning unit, and the reacted wafer is washed after being filtered and cleaned, so that the reactant residue on the wafer is avoided, and the quality of chemical etching is improved.
Drawings
FIG. 1 is a schematic diagram of an etching apparatus according to an improved prior art;
FIG. 2 is a schematic view of an etching apparatus according to an embodiment;
FIG. 3 is a schematic view of a circulation cleaning unit according to an embodiment;
fig. 4 is a schematic structural view of a recycling cleaning unit according to another embodiment.
Reference numerals illustrate:
1. etching means; 2. a reaction tank; 3. a first pipeline; 4. a second pipeline;
5. a circulation cleaning unit; 6. A spraying unit; 60. A spray port;
7. an incident unit; 70. An incident tube; 71. A reflection cover;
8. an overflow trough; 9. a third pipeline; 10. a fourth pipeline; 11 a first one-way valve;
12. a second one-way valve; 13. an ultrasonic oscillation unit; 14. a liquid level sensing unit;
15. a multi-axis motion robot arm; A. and a mechanical arm.
Detailed Description
In order to describe the technical content, constructional features, achieved objects and effects of the technical solution in detail, the following description is made in connection with the specific embodiments in conjunction with the accompanying drawings.
Referring to fig. 1 to 4, the present embodiment provides an etching apparatus with a pipeline structure, as shown in fig. 1, which includes a reaction tank and an overflow tank, and a circulation pipeline for easily extracting the overflow tank to the bottom of the reaction tank, wherein a robot arm is used for placing a wafer into the reaction tank for chemical reaction and taking the wafer out of the reaction tank after the reaction. The etching device 1 of this embodiment includes a reaction tank 2, a first pipeline 3, a second pipeline 4, a circulation cleaning unit 5 and a spraying unit 6, wherein the circulation cleaning unit is communicated with the bottom of the reaction tank through the first pipeline, the circulation cleaning unit is communicated with the spraying unit through the second pipeline, the circulation cleaning unit is used for extracting liquid in the reaction tank and spraying out from the spraying unit after filtering, and the spraying unit is arranged at a notch of the reaction tank and the spraying direction is directed at the notch of the reaction tank. The circulating cleaning unit can realize the functions of extraction and filtration, and particularly can realize the extraction and filtration of the solution by adding a filtration unit at the outlet of the liquid suction pump. The etching apparatus generally employs an automated control method, and may include a controller for controlling operations of all units of the etching apparatus.
When the etching device works, chemical solution is filled in the reaction tank, the controller controls the mechanical arm A to lift the hanging basket with the wafer, and then the hanging basket is immersed in the chemical solution for chemical etching. Before chemical etching is finished, the controller turns on a motor of a liquid pump in the circulating cleaning unit, pumps the solution at the bottom of the reaction tank into the second pipeline from the first pipeline, and sprays the solution from the spraying unit. Since the filtering unit inside the circulation cleaning unit filters the solution, the chemical reactants in the solution sprayed from the spraying unit are greatly reduced. And after the chemical etching is finished, the controller controls the mechanical arm A to lift the wafer out of the reaction tank. Because the spraying direction of the spraying unit points to the notch of the reaction tank, when the wafer is lifted out of the reaction tank, the wafer is washed by the sprayed solution, and because the solution sprayed by the spraying unit basically does not contain chemical reactants, the residues of the reactants on the wafer are avoided, and the quality of chemical etching is further improved.
In order to improve the spraying effect, as shown in fig. 2, the spraying unit 6 includes two parallel spraying pipes, the spraying pipes are disposed at two sides of the notch of the reaction tank, and a row of spraying ports 60 are disposed on the spraying pipes. Therefore, when in spraying, sprayed solution can be sprayed out from two sides of a notch of the reaction tank and meet in the middle, so that two sides of a wafer can be sprayed, and the situation of a spraying dead angle is avoided. Because the wafers in the wafer hanging basket are generally placed in parallel, the controller can control the mechanical arm to rotate the hanging basket to an angle parallel to the wafer and the spraying direction, so that the sprayed solution can flush the surface of the wafer from the middle of the parallel wafers, and a better spraying effect is achieved.
The above embodiment focuses on improvement on the shower pipe, and because the solution needs to flow during chemical etching, the etching apparatus needs an overflow tank and a circulation pipe, and the circulation pipe can be the circulation pipe as shown in fig. 1, that is, a circulation pipe is additionally arranged on the basis of the circulation cleaning unit, and then the controller can start the circulation pipe to circulate before etching the wafer. In some embodiments, to achieve filter cleaning of the circulated solution, the circulated cleaning unit may be utilized to draw the flowing solution required for chemical etching. The etching device 1 further comprises an incidence unit 7, an overflow tank 8, a third pipeline 9 and a fourth pipeline 10, wherein the incidence unit is arranged at the bottom of the reaction tank, the overflow tank is arranged at the periphery outside the reaction tank, the circulating cleaning unit is communicated with the overflow tank through the third pipeline, the circulating cleaning unit is communicated with the incidence unit through the fourth pipeline, and the circulating cleaning unit is used for extracting liquid of the overflow tank and spraying the liquid from the incidence unit.
In order to achieve liquid extraction from different pipelines, the circulation cleaning unit may be provided with two liquid extraction pumps, one for extracting the solution of the reaction tank to the spraying unit and the other for extracting the solution of the overflow tank to the incidence unit. Or in some embodiments, a liquid pump can be used and then the opening and closing of different pipelines can be controlled. Thus, only one liquid pump is needed to realize the extraction of two paths of solutions. Because the liquid extraction time is different between different paths, the use of one liquid extraction pump does not generate conflict. The opening and closing between the different lines can be controlled by solenoid valves. As shown in fig. 3, before etching, the controller may control the solenoid valve on the first and second lines to close the first and second lines, open the solenoid valve on the third and fourth lines, and control the liquid pump to rotate, thereby pumping the solution of the overflow tank to the incidence unit. Near the end of the etch. The controller can control the electromagnetic valve on the first and second pipelines to open the first and second pipelines, close the electromagnetic valve on the third and fourth pipelines, and control the liquid pump to rotate, so that the solution in the reaction tank is pumped to the spraying unit. When the solution in the overflow tank is pumped to the incidence unit, the solution can be filtered through the filtering unit of the circulating cleaning unit, so that the content of chemical reactants in the solution is reduced.
As in the previous embodiments, the extraction of the different lines may be achieved by opening and closing the different lines. Alternatively, in some embodiments, the automatic on-off control may be performed by a one-way valve and a two-way pump (such as a two-way gear pump), as shown in fig. 4, the fourth pipeline is provided with a first one-way valve 11 with a flow direction pointing to the incident unit, and the first pipeline is provided with a second one-way valve 12 with a flow direction pointing to the circulating cleaning unit. Thus, in the etching process, when the circulating cleaning unit is pumped down from top to bottom, the first one-way valve 11 is opened, and liquid enters the incidence unit, so that the liquid circulating field flow in the external compensation is realized. And during the flushing process after etching, when the circulating cleaning unit is pumped up from bottom to top, the second one-way valve 12 is opened, and liquid enters the circulating cleaning unit to realize the flushing solution from inside to outside. Correspondingly, the third pipeline can be provided with a one-way valve with a conduction direction pointing to the circulating cleaning unit, and the second pipeline can also be provided with a one-way valve with a conduction direction pointing to the spraying unit, so that automatic path control is realized.
The incidence unit is used for ejecting liquid from the bottom of the reaction tank so as to realize flowing solution (field flow for short) from the bottom of the reaction tank to the top of the reaction tank. The incident unit may be a square circular tube as shown in fig. 1 placed at the bottom of the reaction tank, and the circular tube has a vertically upward through hole, so that the solution can enter the reaction tank from the through hole on the circular tube. In order to achieve uniform field flow and improve etching quality, the incident unit 7 includes an incident tube 70 and a reflecting cover 71, the upper surface of the reflecting cover is a plane provided with a through hole, the lower surface of the reflecting cover is a paraboloid, the incident tube is disposed at a focus of the parabola of the paraboloid, and an incident hole with a direction pointing to the paraboloid is disposed on the incident tube. When the fourth pipe 10 flows in the solution, the solution flows into the incident pipe, and then is emitted from the incident hole of the incident pipe and is washed toward the paraboloid of the reflecting cover. The incident tube is positioned at the focus, so that the water flow reflected by the paraboloid can form a stable field flow, and meanwhile, the flow direction of the solution can be vertically upwards due to the through holes on the upper surface of the reflecting cover. And because the upper surface of the reflecting cover is the bottom surface of the reaction tank, the uniform field flow of the incident unit enters the reaction tank and forms uniform field flow in the reaction tank, so that the flow velocity of each place of the wafer contacted with the solution is basically consistent, and the etching quality is ensured.
In order to further make the field flow more uniform, the invention also comprises an ultrasonic oscillation unit 13, wherein the ultrasonic oscillation unit 13 is arranged on the wall of the reaction tank. The field flow is scattered through the ultrasonic oscillation unit, so that the field flow is more uniform.
The ultrasonic oscillation unit should act on the field flow before the field flow flows through the wafer, and since the wafer is generally placed in the middle of the reaction tank, the ultrasonic oscillation unit is preferably disposed at a position below the middle of the reaction tank, such as at the side wall or bottom of the reaction tank.
Further, the notch of the overflow trough is provided with a liquid level sensing unit 14 for collecting the liquid level of the overflow trough. The liquid level sensing unit 14 is used for transmitting a liquid level signal to the controller, so that when the liquid level is insufficient, the controller can open the liquid pump to supplement unused solution into the overflow tank or the reaction tank, and the condition that the solution is insufficient due to evaporation loss of the solution is avoided.
Further, a multi-axis motion robot 15 is also included, which is disposed above the reaction tank. The multi-axis motion mechanical arm comprises a multi-axis motion mechanism, wherein the multi-axis motion mechanism can comprise a horizontal motion mechanism and a vertical motion mechanism, and can drive the mechanical arm to move horizontally and vertically respectively, and meanwhile, the multi-axis motion mechanical arm can also comprise a rotation mechanism, and can drive the mechanical arm to rotate along the Rao Shuzhi axis in the vertical direction, so that the wafer boat can be driven to swing in multiple directions, bubbles on the wafer can be thrown away, and more effective wafer etching is realized.
And a chemical monitoring unit (not shown) for detecting the PH value is disposed in the reaction tank in this embodiment. The chemical monitoring unit can only contact with the solution, so that the controller can monitor and alarm the PH value of the solution in the reaction tank, and the user can conveniently replace the solution in the reaction tank.
It should be noted that, although the foregoing embodiments have been described herein, the scope of the present invention is not limited thereby. Therefore, based on the innovative concepts of the present invention, alterations and modifications to the embodiments described herein, or equivalent structures or equivalent flow transformations made by the present description and drawings, apply the above technical solution, directly or indirectly, to other relevant technical fields, all of which are included in the scope of the invention.
Claims (2)
1. An etching apparatus having a piping structure, characterized in that: the device comprises a reaction tank, a first pipeline, a second pipeline, a circulating clean unit and a spraying unit, wherein the circulating clean unit is communicated with the bottom of the reaction tank through the first pipeline, the circulating clean unit is communicated with the spraying unit through the second pipeline, the circulating clean unit is used for extracting liquid of the reaction tank, filtering the liquid and then spraying the liquid from the spraying unit, and the spraying unit is arranged at a notch of the reaction tank and the spraying direction is directed at the notch of the reaction tank;
the spraying unit flushes the wafers lifted out of the reaction tank after reaction;
the spraying unit comprises two mutually parallel spraying pipes, the spraying pipes are arranged on two sides of the notch of the reaction tank, and a row of spraying ports are arranged on the spraying pipes;
the device comprises a reaction tank, a circulating clean unit, a reaction tank, a third pipeline, a fourth pipeline, an incidence unit, an overflow tank, a third pipeline and a fourth pipeline, wherein the incidence unit is arranged at the bottom of the reaction tank, the overflow tank is arranged at the periphery of the outer part of the reaction tank, the circulating clean unit is communicated with the overflow tank through the third pipeline, the circulating clean unit is communicated with the incidence unit through the fourth pipeline, and the circulating clean unit is used for extracting liquid of the overflow tank and spraying the liquid from the incidence unit.
2. An etching apparatus having a piping structure according to claim 1, wherein: the fourth pipeline is provided with a first one-way valve with a circulation direction pointing to the incidence unit, and the first pipeline is provided with a second one-way valve with a circulation direction pointing to the circulation cleaning unit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810214433.5A CN108321104B (en) | 2018-03-15 | 2018-03-15 | Etching device with pipeline structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810214433.5A CN108321104B (en) | 2018-03-15 | 2018-03-15 | Etching device with pipeline structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108321104A CN108321104A (en) | 2018-07-24 |
| CN108321104B true CN108321104B (en) | 2024-01-23 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810214433.5A Active CN108321104B (en) | 2018-03-15 | 2018-03-15 | Etching device with pipeline structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108321104B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111128810A (en) * | 2020-01-02 | 2020-05-08 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Wafer cleaning equipment |
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|---|---|---|---|---|
| CN101295622A (en) * | 2007-04-24 | 2008-10-29 | 中芯国际集成电路制造(上海)有限公司 | Device and method for cleaning wafer |
| CN102246277A (en) * | 2008-11-04 | 2011-11-16 | Lg矽得荣株式会社 | Apparatus and method for wet-processing object, and fluid diffusion plate and barrel used therein |
| CN102760672A (en) * | 2011-04-28 | 2012-10-31 | 英飞凌科技股份有限公司 | Etching device and a method for etching a material of a workpiece |
| CN203733767U (en) * | 2014-02-10 | 2014-07-23 | 中芯国际集成电路制造(北京)有限公司 | Wet etching device |
| CN203855648U (en) * | 2014-04-25 | 2014-10-01 | 确信乐思化学（上海）有限公司 | Improved chemical copper plating device |
| CN205810768U (en) * | 2016-06-22 | 2016-12-14 | 中芯国际集成电路制造（天津）有限公司 | Acid tank cleans device |
| CN207883665U (en) * | 2018-03-15 | 2018-09-18 | 福建省福联集成电路有限公司 | A kind of Etaching device with novel pipeline structure |
-
2018
- 2018-03-15 CN CN201810214433.5A patent/CN108321104B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101295622A (en) * | 2007-04-24 | 2008-10-29 | 中芯国际集成电路制造(上海)有限公司 | Device and method for cleaning wafer |
| CN102246277A (en) * | 2008-11-04 | 2011-11-16 | Lg矽得荣株式会社 | Apparatus and method for wet-processing object, and fluid diffusion plate and barrel used therein |
| CN103354213A (en) * | 2008-11-04 | 2013-10-16 | Lg矽得荣株式会社 | Wafer treatment apparatus and barrel used therein |
| CN102760672A (en) * | 2011-04-28 | 2012-10-31 | 英飞凌科技股份有限公司 | Etching device and a method for etching a material of a workpiece |
| CN203733767U (en) * | 2014-02-10 | 2014-07-23 | 中芯国际集成电路制造(北京)有限公司 | Wet etching device |
| CN203855648U (en) * | 2014-04-25 | 2014-10-01 | 确信乐思化学（上海）有限公司 | Improved chemical copper plating device |
| CN205810768U (en) * | 2016-06-22 | 2016-12-14 | 中芯国际集成电路制造（天津）有限公司 | Acid tank cleans device |
| CN207883665U (en) * | 2018-03-15 | 2018-09-18 | 福建省福联集成电路有限公司 | A kind of Etaching device with novel pipeline structure |
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| CN108321104A (en) | 2018-07-24 |
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