CN108461426B - Multifunctional etching device - Google Patents
Multifunctional etching device Download PDFInfo
- Publication number
- CN108461426B CN108461426B CN201810214401.5A CN201810214401A CN108461426B CN 108461426 B CN108461426 B CN 108461426B CN 201810214401 A CN201810214401 A CN 201810214401A CN 108461426 B CN108461426 B CN 108461426B
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- reaction tank
- spraying
- incidence
- tank
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- 238000005530 etching Methods 0.000 title claims abstract description 35
- 238000006243 chemical reaction Methods 0.000 claims abstract description 76
- 238000005507 spraying Methods 0.000 claims abstract description 42
- 239000007788 liquid Substances 0.000 claims abstract description 40
- 238000004140 cleaning Methods 0.000 claims abstract description 36
- 238000001914 filtration Methods 0.000 claims abstract description 9
- 230000007246 mechanism Effects 0.000 claims description 16
- 239000000126 substance Substances 0.000 claims description 10
- 230000010355 oscillation Effects 0.000 claims description 8
- 238000012544 monitoring process Methods 0.000 claims description 4
- 238000003486 chemical etching Methods 0.000 abstract description 8
- 239000000376 reactant Substances 0.000 abstract description 7
- 235000012431 wafers Nutrition 0.000 description 37
- 238000000605 extraction Methods 0.000 description 11
- 239000007921 spray Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000011010 flushing procedure Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000000844 transformation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
Abstract
The invention discloses a multifunctional etching device which comprises a reaction tank, a multi-axis motion mechanical arm, an overflow tank, a circulating cleaning unit, a spraying unit and an incidence unit, wherein the multi-axis motion mechanical arm is arranged above the reaction tank, the overflow tank is arranged on the periphery outside the reaction tank, the circulating cleaning unit is used for extracting and filtering extracted liquid, the spraying unit is arranged at a notch of the reaction tank, the spraying direction points to the notch of the reaction tank, the incidence unit is arranged at the bottom of the reaction tank, and a first liquid inlet of the circulating cleaning unit is communicated with the bottom of the reaction tank. According to the technical scheme, the movement of the wafer in different directions in the solution can be realized through the multi-axis movement mechanical arm, and the wafer can be moved into different reaction tanks for reaction or cleaning. The spraying unit can avoid reactant residues on the wafer, thereby improving the quality of chemical etching. The parabolic reflector can realize uniform field flow, thereby improving the quality of chemical etching.
Description
Technical Field
The invention relates to the technical field of wafer etching devices, in particular to a multifunctional etching device.
Background
The existing wafer etching device has simple functions, the basic structure comprises a reaction tank, an overflow tank and a mechanical arm which moves up and down, and when in actual use, a plurality of problems exist, such as bubbles exist on the surface of a wafer when the mechanical arm just starts to put the wafer into the reaction tank, and the etching quality is affected; in the etching process, the field flow in the reaction tank is uneven, so that the etching speed of the surface of the wafer is inconsistent, and the etching quality is affected; after etching is completed, the surface of the wafer is attached with the reacted chemical reactants, which affects the post-processing of the wafer. These problems affect the wafer etch yield.
Disclosure of Invention
Therefore, it is necessary to provide a multifunctional etching device to solve the problem of low wafer etching yield of the conventional etching device.
In order to achieve the above object, the present inventors provide a multifunctional etching device, including a reaction tank, a multi-axis motion mechanical arm, an overflow tank, a circulation cleaning unit, a spraying unit and an incidence unit, wherein the multi-axis motion mechanical arm is disposed above the reaction tank, the overflow tank is disposed around the outside of the reaction tank, the circulation cleaning unit is used for extracting and filtering extracted liquid, the spraying unit is disposed at a notch of the reaction tank and the spraying direction is directed to the notch of the reaction tank, the incidence unit is disposed at the bottom of the reaction tank, a first liquid inlet of the circulation cleaning unit is communicated with the bottom of the reaction tank, a second liquid inlet of the circulation cleaning unit is communicated with the bottom of the overflow tank, the incidence unit includes an incidence tube and a reflecting cover, the upper surface of the reflecting cover is a plane provided with a through hole, the lower surface is a paraboloid, the incidence tube is disposed at a focus of the parabola, an incidence hole directed to the parabola is disposed on the incidence tube, and a second liquid outlet of the circulation cleaning unit is connected with the incidence tube.
Further, the spraying unit comprises two mutually parallel spraying pipes, the spraying pipes are arranged on two sides of the notch of the reaction tank, and a row of spraying ports are arranged on the spraying pipes.
Further, a first one-way valve with a flow direction pointing to the incidence unit is arranged between the incidence unit and the circulating cleaning unit, and a second one-way valve with a flow direction pointing to the circulating cleaning unit is arranged between the bottom of the reaction tank and the circulating cleaning unit.
Further, the reactor also comprises an ultrasonic oscillation unit which is arranged on the wall of the tank body of the reaction tank or the lower surface wall of the reflecting cover.
Further, a liquid level sensing unit is arranged at the notch of the overflow groove and used for collecting the liquid level of the overflow groove.
Further, a chemical monitoring unit for detecting the PH value is arranged in the reaction tank.
Further, the multi-axis motion mechanical arm comprises a multi-axis motion mechanism, a rotating mechanism and a mechanical arm, wherein the multi-axis motion mechanism is connected with the rotating mechanism, and the rotating mechanism is connected with the mechanical arm.
Compared with the prior art, the technical scheme can realize the movement of the wafer in different directions in the solution through the multi-axis movement mechanical arm, can remove the bubbles attached to the wafer and avoid the adhesion, and can move the wafer into different reaction tanks for reaction or cleaning. The spraying unit can wash the reacted wafer at the notch of the reaction tank, so that reactant residues on the wafer are avoided, and further, the quality of chemical etching is improved. The parabolic reflector can reflect the incident solution, so that the incident solution forms parallel vertical upward uniform field flow after being reflected, and meanwhile, the upper surface of the reflector is provided with the through holes, so that the non-vertical upward field flow can be shielded, the field flow entering the reaction tank is vertical upward, the uniform field flow is finally realized, and the quality of chemical etching is improved.
Drawings
FIG. 1 is a schematic diagram of an etching apparatus according to an improved prior art;
FIG. 2 is a schematic view of an etching apparatus according to an embodiment;
fig. 3 is a schematic structural view of an incident unit according to an embodiment;
FIG. 4 is a schematic liquid reflection diagram of an incident unit according to an embodiment;
FIG. 5 is a schematic view of a cycle cleaning unit according to an embodiment;
fig. 6 is a schematic structural diagram of a recycling cleaning unit according to another embodiment.
Reference numerals illustrate:
1. etching means; 2. A reaction tank; 3. A first pipeline; 4. A second pipeline;
5. a circulation cleaning unit; 6. A spraying unit; 60. A spray port;
7. an incident unit; 70. An incident tube; 71. A reflection cover;
8. an overflow trough; 9. A third pipeline; 10. A fourth pipeline; 11 a first one-way valve;
12. a second one-way valve; 13. An ultrasonic oscillation unit; 14. A liquid level sensing unit;
15. a multi-axis motion robot arm; a. And a mechanical arm.
Detailed Description
In order to describe the technical content, constructional features, achieved objects and effects of the technical solution in detail, the following description is made in connection with the specific embodiments in conjunction with the accompanying drawings.
Referring to fig. 1 to 6, the present embodiment provides a multifunctional etching apparatus, as shown in fig. 1, which includes a reaction tank and an overflow tank, and a circulation pipeline for easily extracting the overflow tank to the bottom of the reaction tank, wherein a robot arm is used for placing a wafer into the reaction tank for chemical reaction and taking the wafer out of the reaction tank after the reaction. The etching device 1 of this embodiment is as shown in fig. 2 and 3, a multifunctional etching device, including reaction tank 2, multiaxis motion robotic arm 15, overflow launder 8, circulation clean unit 5, spray unit 6 and incident unit 7, multiaxis motion robotic arm sets up in the reaction tank top, the overflow launder sets up around the reaction tank outside, circulation clean unit is used for extracting and filtering the liquid of extraction, spray the notch that the unit setting in the reaction tank and spray directional reaction tank's notch, the incident unit sets up in the bottom of reaction tank, the first inlet and the reaction tank bottom intercommunication of circulation clean unit, the second inlet and the overflow launder bottom intercommunication of circulation clean unit, the incident unit includes incident pipe and reflecting cover, the reflecting cover upper surface is the plane that sets up the through-hole, and the lower surface is the paraboloid, the incident pipe is arranged in the focus department that the paraboloid is located, be provided with directional paraboloid's incident hole on the incident pipe, the second liquid outlet and the incident pipe connection of circulation clean unit.
The etching device generally adopts an automatic control mode, and can comprise a controller for controlling the operation of all units of the etching device. The multi-axis motion mechanical arm comprises a multi-axis motion mechanism, such as a motion mechanism of a 3D printer, wherein the multi-axis motion mechanism can comprise a horizontal motion mechanism and a vertical motion mechanism, and can respectively drive the mechanical arm to move horizontally and vertically, so that the wafers can move in different directions in the solution, the wafers can be removed to avoid adhering bubbles, and meanwhile, the wafers can be moved into different reaction tanks to react or be cleaned. . Meanwhile, the wafer etching device also comprises a rotating mechanism, and the mechanical arm can be driven to rotate along the axis Rao Shuzhi in the vertical direction, so that the wafer boat can be driven to swing in multiple directions, bubbles on the wafer can be thrown away, and more effective wafer etching is realized.
The circulating cleaning unit can realize the functions of extraction and filtration, and particularly can realize the extraction and filtration of the solution by a liquid extraction pump and a filtration unit added at the outlet of the liquid extraction pump. When the etching device works, chemical solution is filled in the reaction tank, the controller controls the mechanical arm A to lift the hanging basket with the wafer, and then the hanging basket is immersed in the chemical solution for chemical etching. The circulating cleaning unit and the incidence unit are used for extracting the solution of the overflow tank and spraying the liquid from the bottom of the reaction tank, so that the flowing solution (field flow for short) from the bottom of the reaction tank to the top of the reaction tank is realized. When the circulation cleaning unit starts to operate, the fourth pipeline 10 flows into the solution, and the solution flows into the incidence pipe, and then is emitted from the incidence hole of the incidence pipe and is flushed towards the paraboloid of the reflecting cover. As shown in fig. 4, the water flow reflected by the paraboloid forms a parallel stationary field flow due to the focus of the incident tube, and the flow direction of the solution is vertically upward (as shown by the arrow direction in fig. 4) due to the through holes on the upper surface of the reflecting cover. And because the upper surface of the reflecting cover is the bottom surface of the reaction tank, the uniform field flow of the incident unit enters the reaction tank and forms uniform field flow in the reaction tank, so that the flow velocity of each place of the wafer contacted with the solution is basically consistent, and the etching quality is ensured.
Before chemical etching is finished, the controller turns on a motor of a liquid pump in the circulating cleaning unit, pumps the solution at the bottom of the reaction tank into the second pipeline from the first pipeline, and sprays the solution from the spraying unit. Since the filtering unit inside the circulation cleaning unit filters the solution, the chemical reactants in the solution sprayed from the spraying unit are greatly reduced. And after the chemical etching is finished, the controller controls the mechanical arm A to lift the wafer out of the reaction tank. Because the spraying direction of the spraying unit points to the notch of the reaction tank, when the wafer is lifted out of the reaction tank, the wafer is washed by the sprayed solution, and because the solution sprayed by the spraying unit basically does not contain chemical reactants, the residues of the reactants on the wafer are avoided, and the quality of chemical etching is further improved.
In order to improve the spraying effect, as shown in fig. 2, the spraying unit 6 includes two parallel spraying pipes, the spraying pipes are disposed at two sides of the notch of the reaction tank, and a row of spraying ports 60 are disposed on the spraying pipes. Therefore, when in spraying, sprayed solution can be sprayed out from two sides of a notch of the reaction tank and meet in the middle, so that two sides of a wafer can be sprayed, and the situation of a spraying dead angle is avoided. Because the wafers in the wafer hanging basket are generally placed in parallel, the controller can control the mechanical arm to rotate the hanging basket to an angle parallel to the wafer and the spraying direction, so that the sprayed solution can flush the surface of the wafer from the middle of the parallel wafers, and a better spraying effect is achieved.
In order to achieve liquid extraction from different pipelines, the circulation cleaning unit may be provided with two liquid extraction pumps, one for extracting the solution of the reaction tank to the spraying unit and the other for extracting the solution of the overflow tank to the incidence unit. Or in some embodiments, a liquid pump can be used and then the opening and closing of different pipelines can be controlled. Thus, only one liquid pump is needed to realize the extraction of two paths of solutions. Because the liquid extraction time is different between different paths, the use of one liquid extraction pump does not generate conflict. The opening and closing between the different lines can be controlled by solenoid valves. As shown in fig. 5, before etching, the controller may control the solenoid valve on the first and second lines to close the first and second lines, open the solenoid valve on the third and fourth lines, and control the liquid pump to rotate, thereby pumping the solution of the overflow tank to the incidence unit. Near the end of the etch. The controller can control the electromagnetic valve on the first and second pipelines to open the first and second pipelines, close the electromagnetic valve on the third and fourth pipelines, and control the liquid pump to reversely rotate, so that the solution in the reaction tank is pumped to the spraying unit. When the solution in the overflow tank is pumped to the incidence unit, the solution can be filtered through the filtering unit of the circulating cleaning unit, so that the content of chemical reactants in the solution is reduced.
As in the previous embodiments, the extraction of the different lines may be achieved by opening and closing the different lines. Alternatively, in some embodiments, the automatic on-off control may be performed by a one-way valve and a two-way pump (such as a two-way gear pump), as shown in fig. 6, the fourth pipeline is provided with a first one-way valve 11 with a flow direction pointing to the incident unit, and the first pipeline is provided with a second one-way valve 12 with a flow direction pointing to the circulating cleaning unit. Thus, in the etching process, when the circulating cleaning unit is pumped down from top to bottom, the first one-way valve 11 is opened, and liquid enters the incidence unit, so that the liquid circulating field flow in the external compensation is realized. And during the flushing process after etching, when the circulating cleaning unit is pumped up from bottom to top, the second one-way valve 12 is opened, and liquid enters the circulating cleaning unit to realize the flushing solution from inside to outside. Correspondingly, the third pipeline can be provided with a one-way valve with a conduction direction pointing to the circulating cleaning unit, and the second pipeline can also be provided with a one-way valve with a conduction direction pointing to the spraying unit, so that automatic path control is realized.
In order to further make the field flow more uniform, the invention also comprises an ultrasonic oscillation unit 13, wherein the ultrasonic oscillation unit 13 is arranged on the wall of the reaction tank. The field flow is scattered through the ultrasonic oscillation unit, so that the field flow is more uniform. The ultrasonic oscillation unit should act on the field flow before the field flow flows through the wafer, and since the wafer is generally placed in the middle of the reaction tank, the ultrasonic oscillation unit is preferably disposed at a position below the middle of the reaction tank, such as on the tank wall of the reaction tank or on the lower surface wall of the reflecting cover.
Further, the notch of the overflow trough is provided with a liquid level sensing unit 14 for collecting the liquid level of the overflow trough. The liquid level sensing unit 14 is used for transmitting a liquid level signal to the controller, so that when the liquid level is insufficient, the controller can open the liquid pump to supplement unused solution into the overflow tank or the reaction tank, and the condition that the solution is insufficient due to evaporation loss of the solution is avoided.
And a chemical monitoring unit (not shown) for detecting the PH value is disposed in the reaction tank in this embodiment. The chemical monitoring unit can only contact with the solution, so that the controller can monitor and alarm the PH value of the solution in the reaction tank, and the user can conveniently replace the solution in the reaction tank.
It should be noted that, although the foregoing embodiments have been described herein, the scope of the present invention is not limited thereby. Therefore, based on the innovative concepts of the present invention, alterations and modifications to the embodiments described herein, or equivalent structures or equivalent flow transformations made by the present description and drawings, apply the above technical solution, directly or indirectly, to other relevant technical fields, all of which are included in the scope of the invention.
Claims (5)
1. A multifunctional etching apparatus, characterized in that: the device comprises a reaction tank, a multi-axis motion mechanical arm, an overflow tank, a circulating cleaning unit, a spraying unit and an incidence unit, wherein the multi-axis motion mechanical arm is arranged above the reaction tank, the overflow tank is arranged around the outside of the reaction tank, the circulating cleaning unit is used for extracting and filtering extracted liquid, the spraying unit is arranged at the notch of the reaction tank, the spraying direction of the spraying unit is directed at the notch of the reaction tank, the incidence unit is arranged at the bottom of the reaction tank, a first liquid inlet of the circulating cleaning unit is communicated with the bottom of the reaction tank, a second liquid inlet of the circulating cleaning unit is communicated with the bottom of the overflow tank, the incidence unit comprises an incidence pipe and a reflecting cover, the upper surface of the reflecting cover is a plane provided with a through hole, the lower surface of the reflecting cover is a paraboloid, the incidence pipe is arranged at the focus of the paraboloid, an incidence hole with the direction directed at the paraboloid is arranged on the incidence pipe, and a second liquid outlet of the circulating cleaning unit is connected with the incidence pipe;
the spraying unit comprises two mutually parallel spraying pipes, the spraying pipes are arranged on two sides of the notch of the reaction tank, and a row of spraying ports are arranged on the spraying pipes;
the first one-way valve with the flow direction pointing to the incidence unit is arranged between the incidence unit and the circulating cleaning unit, and the second one-way valve with the flow direction pointing to the circulating cleaning unit is arranged between the bottom of the reaction tank and the circulating cleaning unit.
2. A multi-purpose etching apparatus according to claim 1, wherein: the device also comprises an ultrasonic oscillation unit which is arranged on the wall of the tank body of the reaction tank or the lower surface wall of the reflecting cover.
3. A multi-purpose etching apparatus according to claim 1, wherein: the notch of overflow launder is provided with the liquid level sensing unit, the liquid level sensing unit is used for gathering the overflow launder liquid level.
4. A multi-purpose etching apparatus according to claim 1, wherein: and a chemical monitoring unit for detecting the PH value is arranged in the reaction tank.
5. A multi-purpose etching apparatus according to claim 1, wherein: the multi-axis motion mechanical arm comprises a multi-axis motion mechanism, a rotating mechanism and a mechanical arm, wherein the multi-axis motion mechanism is connected with the rotating mechanism, and the rotating mechanism is connected with the mechanical arm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810214401.5A CN108461426B (en) | 2018-03-15 | 2018-03-15 | Multifunctional etching device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810214401.5A CN108461426B (en) | 2018-03-15 | 2018-03-15 | Multifunctional etching device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108461426A CN108461426A (en) | 2018-08-28 |
| CN108461426B true CN108461426B (en) | 2024-01-23 |
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| CN201810214401.5A Active CN108461426B (en) | 2018-03-15 | 2018-03-15 | Multifunctional etching device |
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| CN (1) | CN108461426B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110479685A (en) * | 2019-08-28 | 2019-11-22 | 西安奕斯伟硅片技术有限公司 | A kind of silicon chip cleaning device, silicon wafer cleaning method and silicon wafer store vehicle |
| CN112371612B (en) * | 2020-10-13 | 2021-08-24 | 江苏亚电科技有限公司 | Basket-free wafer cleaning method |
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| CN102102211A (en) * | 2009-12-16 | 2011-06-22 | 株式会社东芝 | Etching method, method for manufacturing microstructure, and etching apparatus |
| CN102760672A (en) * | 2011-04-28 | 2012-10-31 | 英飞凌科技股份有限公司 | Etching device and a method for etching a material of a workpiece |
| WO2013164942A1 (en) * | 2012-05-01 | 2013-11-07 | 東京エレクトロン株式会社 | Etching method, etching device and storage medium |
| CN106558518A (en) * | 2017-01-06 | 2017-04-05 | 深圳天华机器设备有限公司 | A kind of Etaching device |
| CN207868175U (en) * | 2018-03-15 | 2018-09-14 | 福建省福联集成电路有限公司 | A kind of multi-functional Etaching device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004214243A (en) * | 2002-12-27 | 2004-07-29 | Toshiba Corp | Method and device for etching semiconductor wafer |
| TWI358327B (en) * | 2008-11-19 | 2012-02-21 | Inotera Memories Inc | Chemical treatment apparatus |
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2018
- 2018-03-15 CN CN201810214401.5A patent/CN108461426B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102102211A (en) * | 2009-12-16 | 2011-06-22 | 株式会社东芝 | Etching method, method for manufacturing microstructure, and etching apparatus |
| CN102760672A (en) * | 2011-04-28 | 2012-10-31 | 英飞凌科技股份有限公司 | Etching device and a method for etching a material of a workpiece |
| WO2013164942A1 (en) * | 2012-05-01 | 2013-11-07 | 東京エレクトロン株式会社 | Etching method, etching device and storage medium |
| JP2013232593A (en) * | 2012-05-01 | 2013-11-14 | Tokyo Electron Ltd | Etching method, etching device, and storage medium |
| CN106558518A (en) * | 2017-01-06 | 2017-04-05 | 深圳天华机器设备有限公司 | A kind of Etaching device |
| CN207868175U (en) * | 2018-03-15 | 2018-09-14 | 福建省福联集成电路有限公司 | A kind of multi-functional Etaching device |
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| CN108461426A (en) | 2018-08-28 |
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