CN108470693B - A kind of Etaching device control method and system - Google Patents
A kind of Etaching device control method and system Download PDFInfo
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- CN108470693B CN108470693B CN201810215114.6A CN201810215114A CN108470693B CN 108470693 B CN108470693 B CN 108470693B CN 201810215114 A CN201810215114 A CN 201810215114A CN 108470693 B CN108470693 B CN 108470693B
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- unit
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- tank bottom
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
Abstract
The present invention discloses a kind of Etaching device control method and system, is applied in Etaching device, includes the following steps: that solution is extracted into the incident unit of reaction tank bottom by control loop cleaning unit by overflow launder；It controls in the mobile cassette to reactive tank of mechanical arm；When preset time before reaching processing procedure and terminating, solution is extracted into spray unit by reaction tank bottom by control loop cleaning unit；Mechanical arm is controlled at the end of processing procedure to remove cassette out of reactive tank.Above-mentioned technical proposal washes away the wafer after reaction by the solution in circulation cleaning unit abstraction reaction slot, and after filtering is clean, avoids the reactant on wafer from remaining, and then improve the quality of chemical etching.
Description
Technical field
The present invention relates to crystal round etching engineering device technique field more particularly to a kind of Etaching device control methods and system.
Background technique
Crystal round etching device is the device that is etched using solution to wafer, after the completion of existing crystal round etching, generally
It is directly to be hung out wafer from the etching solution of reactive tank by suspender.When wafer is detached from reactive tank in this way, wafer wall
On can adhere to etching solution, due to having chemical reactant in etching solution, then can adhere to chemical reactant on wafer, cause chemical anti-
Answer object deposition problems.
Summary of the invention
For this reason, it may be necessary to provide a kind of Etaching device control method and system, solve existing Etaching device be detached from wafer it is anti-
Answer the reverse deposit that chemical reactant can be led to the problem of when slot.
To achieve the above object, a kind of Etaching device control method is inventor provided, is applied in Etaching device, including
Following steps:
Solution is extracted into the incident unit of reaction tank bottom by control loop cleaning unit by overflow launder；
It controls in the mobile cassette to reactive tank of mechanical arm；
When preset time before reaching processing procedure and terminating, solution is extracted into spray by reaction tank bottom by control loop cleaning unit
Drench unit；
Mechanical arm is controlled at the end of processing procedure to remove cassette out of reactive tank.
Further, further include following steps before method starts:
Detect whether liquid level meets the requirements by liquid level sensing device；
Control loop cleaning unit step is carried out if meeting；
Fluid infusion pump is opened if being unsatisfactory for carries out the progress control loop cleaning after liquid level is met the requirements of solution supplement
Unit step.
Further, step " the incident unit that solution is extracted into reaction tank bottom by control loop cleaning unit by overflow launder "
Comprising steps of
The valve that control overflow launder flows to incident unit is opened；
The valve for controlling reaction tank bottom to spray unit is closed；
It opens circulation cleaning unit and carries out drawing liquid；
And step " solution is extracted into spray unit by reaction tank bottom by control loop cleaning unit " comprising steps of
The valve that control overflow launder flows to reaction tank bottom is closed；
The valve for controlling reaction tank bottom to spray unit is opened；
It opens circulation cleaning unit and carries out drawing liquid.
Further, the preset time is 10 seconds.
It include Etaching device, controller and memory the present invention also provides a kind of Etaching device control system, it is described to deposit
It is stored with computer program on reservoir, such as above-mentioned any one the method is realized when the computer program is executed by a controller
The step of.
It is different from the prior art, above-mentioned technical proposal passes through the solution in circulation cleaning unit abstraction reaction slot, and in mistake
Wafer after reaction is washed away after filter is clean, the reactant on wafer is avoided to remain, and then improves the quality of chemical etching.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of Etaching device described in technology before improving；
Fig. 2 is the structural schematic diagram of Etaching device described in specific embodiment；
Fig. 3 is method flow diagram described in specific embodiment；
Fig. 4 is method flow diagram described in another specific embodiment；
Fig. 5 is the structural schematic diagram that cleaning unit is recycled described in specific embodiment；
Fig. 6 is the structural schematic diagram that cleaning unit is recycled described in another specific embodiment.
Description of symbols:
1, Etaching device；2, reactive tank；3, the first pipeline；4, the second pipeline；
5, cleaning unit is recycled；6, spray unit；60, spray port；
7, incident unit；70, incident pipe；71, reflector；
8, overflow launder；9, third pipeline；10, the 4th pipeline；11 first check valves；
12, second one-way valve；13, ultrasonic oscillation unit；14, level sensing unit；
15, multiaxial motion mechanical arm；A, mechanical arm.
Specific embodiment
Technology contents, construction feature, the objects and the effects for detailed description technical solution, below in conjunction with specific reality
It applies example and attached drawing is cooperated to be explained in detail.
Fig. 1 to Fig. 6 is please referred to, the present embodiment provides a kind of Etaching device control method and system, existing Etaching devices
As shown in Figure 1, including reactive tank and overflow launder, there are one circulation lines to be used for the solution extraction of overflow launder to reactive tank
Bottom, mechanical arm carry out chemically reacting in reactive tank and after the reaction take wafer from reactive tank for placing the wafer in
Out.The Etaching device 1 of the present embodiment is as shown in Fig. 2, include reactive tank 2, the first pipeline 3, the second pipeline 4, circulation cleaning unit 5
It with spray unit 6, recycles cleaning unit and is connected to by the first pipeline with reaction tank bottom, circulation cleaning unit passes through the second pipeline
It is connected to spray unit, circulation cleaning unit sprays after being used for the liquid of abstraction reaction slot and filtering from spray unit, and spray is single
Member is arranged in the notch of reactive tank and sprays the notch that reactive tank is directed toward in direction.Wherein, circulation cleaning unit may be implemented to extract
With the effect of filtering, specifically a filter element can be increased by drawing liquid pump and in the exit of drawing liquid pump to realize to molten
The extraction and filtering of liquid.Etaching device can wrap generally by the way of automation control containing a controller, controller with
All units of Etaching device connect and are used to control the work of all units of Etaching device.
Etaching device at work, fills chemical solution in reactive tank first, and then controller control mechanical arm A is hung
The hanging basket equipped with wafer is played, then hanging basket is immersed in chemical solution and carries out chemical etching.Before chemical etching finishes, control
Device opens the motor of drawing liquid pump inside circulation cleaning unit, and the solution of reaction tank bottom is extracted into the second pipeline from the first pipeline
It is interior, and sprayed from spray unit.It is since the filter element inside circulation cleaning unit can be filtered solution, then single from spray
The chemical reactant in solution that member sprays greatly reduces.Then after chemical etching, controller controls mechanical arm A will
Wafer is hung out out of reactive tank.Since the notch of reactive tank is directed toward in the spray direction of spray unit, then wafer is hung out from reactive tank
When, washing away for the solution of spray can be passed through, be substantially free of chemical reactant in the solution sprayed due to spray unit, then
It avoids the reactant on wafer from remaining, and then improves the quality of chemical etching.
In order to improve spraying effect, as shown in Fig. 2, the spray unit 6 includes two spray tubes being parallel to each other, spray
The notch two sides of reactive tank are arranged in pipe, and row's spray port 60 is provided on spray tube.In this way spray when, spray it is molten
Liquid can be sprayed from the notch two sides of reactive tank and be crossed in centre, all sprayed, avoided out so as to the two sides to wafer
The case where now spraying dead angle.Since the wafer in wafer hanging basket is typically all to be placed in parallel, controller can control mechanical arm
Hanging basket direction is rotated into the wafer angle parallel with direction is sprayed, the solution sprayed in this way can wash away among parallel wafer
Crystal column surface reaches better spraying effect.
Above-described embodiment emphasis is the improvement on spray pipeline, and the solution for needing to flow when due to chemical etching then loses
Overflow launder and circulation line are also needed on engraving device, circulation line can be that is, clean single in circulation using the circulation line such as Fig. 1
Additionally a circulation line is set again on the basis of member, then controller is before etching wafer, so that it may start the circulation line
It is recycled.In certain embodiments, in order to realize that the solution to circulation is filtered cleaning, it can use circulation cleaning unit
Carry out the extraction of the solution of flowing required when chemical etching.Then Etaching device 1 further includes incident unit 7, overflow launder 8, third
The bottom of reactive tank is arranged in pipeline 9 and the 4th pipeline 10, the incidence unit, and the overflow launder is located at four outside reactive tank
Week, circulation cleaning unit are connected to by third pipeline with overflow launder, and circulation cleaning unit is connected by the 4th pipeline and incident unit
Logical, circulation cleaning unit is used to extract the liquid of overflow launder and sprays from incident unit.
Method of the invention is as shown in figure 3, be applied on the Etaching device with spray unit and incident unit.Including such as
Lower step: solution is extracted into the incident unit of reaction tank bottom by step S211 control loop cleaning unit by overflow launder；It is real in this way
Now react the flowing of tank liquid.Then in the mobile cassette to reactive tank of step S212 control mechanical arm, due in cassette
There is wafer, then wafer, which can enter, starts to be etched in reactive tank.Preset time of the step S213 before reaching processing procedure and terminating
When, solution is extracted into spray unit by reaction tank bottom by control loop cleaning unit.Wherein, preset time can be manually set or
Person's program is preset, and such as preferably 10 seconds.I.e. close to an end etch when, first start drawing liquid and sprayed to spray unit
Leaching, then step S214 controls mechanical arm at the end of processing procedure and removes cassette out of reactive tank.Cassette is in removal in this way
When, wafer can avoid chemical reactant from remaining by spray unit so that the solution of spray unit can wash away wafer.
In order to realize the Liquid extracting of different pipelines, circulation cleaning unit can be set that there are two drawing liquid pump, a drawing liquids
For the solution of reactive tank to be extracted into spray unit, another drawing liquid pump is used to the solution of overflow launder being extracted into incident unit pump.
Or in some embodiments, the opening and closing of different pipelines can be then controlled using a drawing liquid pump.It only needs in this way
Want a drawing liquid pump that can realize the solution extraction of two-way.Because the Liquid extracting time between not going the same way is different, then use
The case where one drawing liquid pump can't generate conflict.Open and close between different pipelines can be controlled by solenoid valve,
As shown in Figure 5.Before the etch, controller can control the solenoid valve (two solenoid valves below Fig. 5) on the one the second pipelines
The the one the second pipelines are closed, open the solenoid valve (two solenoid valves above Fig. 5) of the 3rd the 4th pipeline, and control drawing liquid pump
Rotation, so that the solution of overflow launder is extracted into incident unit.I.e. " solution is extracted into step by control loop cleaning unit by overflow launder
The incident unit of reaction tank bottom " is comprising steps of the valve that control overflow launder flows to incident unit is opened；Control reaction tank bottom
Valve to spray unit is closed；It opens circulation cleaning unit and carries out drawing liquid.When etching closes to an end, controller be can control
Solenoid valve on the one the second pipelines is opened to open the one the second pipelines, closes the solenoid valve of the 3rd the 4th pipeline, and control
Drawing liquid pump rotation, so that the solution of reactive tank is extracted into spray unit, i.e., " control loop cleaning unit is by solution by reacting for step
Trench bottom is extracted into spray unit " comprising steps of the valve that control overflow launder flows to reaction tank bottom is closed；Control reaction tank bottom
Valve to spray unit is opened；It opens circulation cleaning unit and carries out drawing liquid.When the solution of overflow launder is extracted into incident unit,
Solution can also be filtered by recycling the filter element of cleaning unit, to reduce containing for chemical reactant in solution
Amount.
As with the above discussed embodiment, the extraction of different pipelines can be realized by opening and closing different pipelines.Or
Person is in some embodiments it is possible to carry out automatic switch control by check valve and two-way pump (such as double-direction gearpump).Such as
Shown in Fig. 6, the 4th pipeline is equipped with the first check valve 11 that circulating direction is directed toward incident unit, sets on first pipeline
There is circulating direction to be directed toward the second one-way valve 12 of circulation cleaning unit.In this way, in etching process, circulation cleaning unit is from upper past
When lower pumping, the first check valve 11 can be opened, and liquid can enter incident unit, be realized by the liquid circulation field in outer benefit
Stream.And the scour process finished in etching, when circulation cleaning unit is taken out from the bottom up, second one-way valve 12 can be opened, liquid
Cognition enters circulation cleaning unit, realizes and washes away solution outside by interior benefit.Correspondingly, conducting direction can be set in third pipeline
The check valve that conducting direction is directed toward spray unit also can be set in check valve, the second pipeline for being directed toward circulation cleaning unit, realizes
The access of automation controls.
Incident unit is exactly for spraying liquid from reaction tank bottom, to realize by reaction tank bottom to reaction groove top
The solution (abbreviation field flow) of the flowing in portion.Incident unit can be using such as such a pros for being placed on reaction tank bottom of Fig. 1
Shape round tube, there is through-hole straight up on round tube, and such solution can enter in reactive tank from the through-hole on round tube.For reality
Now uniform field flow, improves etching quality, and the incidence unit 7 includes incident pipe 70 and reflector 71, table on the reflector
Face is the plane that through-hole is arranged, and lower surface is paraboloid, and the incident pipe is placed in the focus where the paraboloidal parabola
Locate, direction is provided in the incident pipe and is directed toward paraboloidal entrance aperture.When the 4th pipeline 10 flows into solution, solution meeting
Incident pipe is flowed into, is then projected from the entrance aperture of incident pipe, and rush at the paraboloid of reflector.Since incident pipe is in focus
Place, the water flow after parabolic reflector will form steady field flow, simultaneously because the through-hole of reflector upper surface, can allow the stream of solution
Dynamic direction is straight up.And since the upper surface of reflector is the bottom surface of reactive tank, then the uniform field flow meeting of incident unit
It enters in reactive tank, and forms uniform field flow in reactive tank, so that the flow velocity base that each place of wafer is contacted with solution
This is consistent, guarantees etching quality.
In order to which further such that field flow is more uniform, the invention also includes ultrasonic oscillation unit 13, supersonic oscillations lists
Member 13 is arranged on the groove body wall of reactive tank.By ultrasonic oscillation unit, field flow is broken up, so that field flow is more uniform.
Ultrasonic oscillation unit should act on field flow before field flow flows through wafer, since wafer is typically placed in reactive tank
Middle part, then the ultrasonic oscillation unit is preferably arranged on following position in the middle part of reactive tank, and the side wall of reactive tank is such as arranged in
Or bottom.
Further, the notch of the overflow launder is provided with level sensing unit 14, and the level sensing unit is for adopting
Collect overflow launder liquid level.Then the method for the present embodiment can also include step S201 whether full by liquid level sensing device detection liquid level
Foot requires；S211 is entered step if meeting carries out control loop cleaning unit step；It is entered step if being unsatisfactory for
S202 opens fluid infusion pump and carries out solution supplement progress step S211 control loop cleaning unit step after liquid level is met the requirements.
Level sensing unit 14 is used to transmit liquid level signal to controller, and in this way when liquid level deficiency, controller can open pumping
Liquid pump adds to not used solution in overflow launder or reactive tank, and solution evaporating loss is avoided to lead to the insufficient feelings of solution
Condition.
It further, further include multiaxial motion mechanical arm 15, the multiaxial motion mechanical arm is arranged on reactive tank
Side.Multiaxial motion mechanical arm includes Multi-shaft movement mechanism, and Multi-shaft movement mechanism may include horicontal motion mechanism and vertical
Movement mechanism, can drive mechanical arm horizontal movement and vertical motion respectively, and horicontal motion mechanism can drive mechanical arm
On wafer to different reactive tanks in reacted.Then in step S212, user can first set the reactive tank to be moved to,
Then controller can control mechanical arm and be moved in the reactive tank of setting.It can also include rotating mechanism, can drive
Mechanical arm is rotated around vertical axis in the vertical direction, can drive the multi-direction whipping of cassette in this way, can will be on wafer
Bubble is got rid of, and realizes more effective crystal round etching.
In a specific real-time mode, the method and step of control can be as shown in figure 4, be the processing step before etching first
Suddenly, then carry out the operation of unloading goods wafer being placed on mechanical arm.Then controller carries out liquid level judgement, and control loop is clean
The opening and closing of net unit internal circulation pump (or drawing liquid pump) drawing liquid and each valve, and be etched.Etch finish fastly when
It waits, control valve and circulating pump switch circulation line and take out wafer.Then controller can move cassette and carry out to clean tank
Further cleaning.And subsequent cleaning step can be carried out.
And the chemical monitoring unit (not shown go out) for detecting pH value is provided in the embodiment of the present invention reactive tank.
As long as chemical monitoring unit can touch solution, controller may be implemented to the monitoring of solution pH value and report in reactive tank
It is alert, convenient for users to solution in replacement reactive tank.
The present invention also provides a kind of Etaching device control systems, include Etaching device, controller and memory, feature
It is: is stored with computer program on the memory, realizes when the computer program is executed by a controller as any of the above-described
The step of item the method.
It should be noted that being not intended to limit although the various embodiments described above have been described herein
Scope of patent protection of the invention.Therefore, it based on innovative idea of the invention, change that embodiment described herein is carried out and is repaired
Change, or using equivalent structure or equivalent flow shift made by description of the invention and accompanying drawing content, it directly or indirectly will be with
Upper technical solution is used in other related technical areas, is included within scope of patent protection of the invention.
Claims (5)
1. a kind of Etaching device control method is applied in Etaching device, which comprises the steps of:
Solution is extracted into the incident unit of reaction tank bottom by control loop cleaning unit by overflow launder；
It controls in the mobile cassette to reactive tank of mechanical arm；
When preset time before reaching processing procedure and terminating, it is single that solution is extracted into spray by reaction tank bottom by control loop cleaning unit
Member, during solution is extracted into spray unit by reaction tank bottom by circulation cleaning unit, solution is by circulation cleaning unit
The filtering of the filter element in portion；
Mechanical arm is controlled at the end of processing procedure to remove cassette out of reactive tank；
The notch of reactive tank is directed toward in the spray direction of spray unit, so that by spray when the wafer in cassette is hung out from reactive tank
Unit, and washed away by the solution of spray unit.
2. a kind of Etaching device control method according to claim 1, which is characterized in that before method starts further include as
Lower step:
Detect whether liquid level meets the requirements by liquid level sensing device；
Control loop cleaning unit step is carried out if meeting；
Fluid infusion pump is opened if being unsatisfactory for carries out solution supplement progress control loop cleaning unit after liquid level is met the requirements
Step.
3. a kind of Etaching device control method according to claim 1, which is characterized in that " control loop is clean single for step
Solution is extracted into the incident unit of reaction tank bottom by member by overflow launder " comprising steps of
The valve that control overflow launder flows to incident unit is opened；
The valve for controlling reaction tank bottom to spray unit is closed；
It opens circulation cleaning unit and carries out drawing liquid；
And step " solution is extracted into spray unit by reaction tank bottom by control loop cleaning unit " comprising steps of
The valve that control overflow launder flows to reaction tank bottom is closed；
The valve for controlling reaction tank bottom to spray unit is opened；
It opens circulation cleaning unit and carries out drawing liquid.
4. a kind of Etaching device control method according to claim 1, which is characterized in that the preset time is 10 seconds.
5. a kind of Etaching device control system includes Etaching device, controller and memory, it is characterised in that: the storage
It is stored with computer program on device, realizes when the computer program is executed by a controller such as claims 1 to 4 any one institute
The step of stating method.
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| CN201810215114.6A CN108470693B (en) | 2018-03-15 | 2018-03-15 | A kind of Etaching device control method and system |
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| CN201810215114.6A CN108470693B (en) | 2018-03-15 | 2018-03-15 | A kind of Etaching device control method and system |
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| JP5019370B2 (en) * | 2007-07-12 | 2012-09-05 | ルネサスエレクトロニクス株式会社 | Substrate cleaning method and cleaning apparatus |
| US8707974B2 (en) * | 2009-12-11 | 2014-04-29 | United Microelectronics Corp. | Wafer cleaning device |
| JP5802407B2 (en) * | 2011-03-04 | 2015-10-28 | 三菱瓦斯化学株式会社 | Substrate processing apparatus and substrate processing method |
| US20140083458A1 (en) * | 2011-05-20 | 2014-03-27 | Panasonic Corporation | Photoresist stripping solution, stripping solution recycling system and operating method, and method for recycling stripping solution |
| CN102873042A (en) * | 2012-09-27 | 2013-01-16 | 奥特斯维能源（太仓）有限公司 | Spraying device for removing residual sodium silicate on surfaces of silicon wafers |
| TWI520794B (en) * | 2014-10-22 | 2016-02-11 | Els System Technology Co Ltd | A soaking device with a cleaning device |
| CN104409396B (en) * | 2014-11-26 | 2017-08-25 | 太极能源科技（昆山）有限公司 | The wet etch process and device of a kind of solar battery sheet |
| JP6662130B2 (en) * | 2016-03-16 | 2020-03-11 | 株式会社リコー | Wet etching equipment |
| JP2018006616A (en) * | 2016-07-05 | 2018-01-11 | 住友精密工業株式会社 | Substrate processing device |
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