CN203733767U - Wet etching device - Google Patents
Wet etching device Download PDFInfo
- Publication number
- CN203733767U CN203733767U CN201420060913.8U CN201420060913U CN203733767U CN 203733767 U CN203733767 U CN 203733767U CN 201420060913 U CN201420060913 U CN 201420060913U CN 203733767 U CN203733767 U CN 203733767U
- Authority
- CN
- China
- Prior art keywords
- wafer
- wet etching
- grabbing device
- etching apparatus
- cleaning fluid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000001039 wet etching Methods 0.000 title claims abstract description 43
- 238000004140 cleaning Methods 0.000 claims abstract description 43
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 40
- 239000012530 fluid Substances 0.000 claims abstract description 37
- 239000013078 crystal Substances 0.000 claims description 21
- 229910052757 nitrogen Inorganic materials 0.000 claims description 19
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 11
- 239000002253 acid Substances 0.000 claims description 5
- 230000007797 corrosion Effects 0.000 claims description 4
- 238000005260 corrosion Methods 0.000 claims description 4
- 238000005530 etching Methods 0.000 abstract description 14
- 238000005516 engineering process Methods 0.000 abstract description 8
- 229910001873 dinitrogen Inorganic materials 0.000 abstract 2
- 235000012431 wafers Nutrition 0.000 description 100
- 239000007788 liquid Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 14
- 230000008569 process Effects 0.000 description 12
- 230000004044 response Effects 0.000 description 5
- 238000012545 processing Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229920002943 EPDM rubber Polymers 0.000 description 2
- 244000043261 Hevea brasiliensis Species 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920003052 natural elastomer Polymers 0.000 description 2
- 229920001194 natural rubber Polymers 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920001084 poly(chloroprene) Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The utility model relates to a wet etching device. The wet etching device at least comprises a wafer grabbing device which has an annular body and can rotate, a nitrogen gas pipeline facing the annular body, a cleaning groove which is used for accommodating the wafer grabbing device and providing cleaning fluid, wherein the annular body comprises two curved faces, a connection portion of the two curved faces realizes connection through a rotating shaft, and the annular body realizes opening or closing through the rotating shaft. According to the wet etching device, a non-reaction face of a wafer is completely prevented from mechanically contacting with the wafer grabbing device, a reaction face of the wafer faces downwards, the nitrogen gas is let into the non-reaction face of the wafer, the non-reaction face of the wafer can be effectively protected from contacting with the cleaning fluid, the cleaning fluid and a surface of the wafer realize relatively uniform contact, on-chip uniformity of the wafer wet etching technology is improved, temperature of the cleaning fluid in the cleaning groove is relatively stable, and inter-chip uniformity of wafer etching of one same batch and different batches can be further improved.
Description
Technical field
The utility model relates to a kind of semiconductor equipment, particularly relates to a kind of wet etching apparatus.
Background technology
In semiconductor fabrication, usually need thinning back side of silicon wafer, back side film is removed, Wafer Backside Cleaning and back side Etching etc., current three dimensional integrated circuits technology develops rapidly, along with application and the back side making technology of Double-Sided Polishing Technology are used more and more continually, there is no the differentiation of proper wafer frontside and wafer rear.The formation of these treatment process need to complete by etching technique, in a broad sense, so-called etching technique, comprised by whole material evenly remove and pattern selectivity part remove technology.Etching is divided into wet etching and dry etching, and wet etching utilizes specific chemical reagent to need etched part to decompose crystal column surface exactly, and is got rid of after being converted into the compound that dissolves in this solution, to reach etched object.Wet etching is the etching mode extensively using in manufacture of semiconductor, and good wet etching process feature should reach following some requirement: 1. the non-reaction surface of wafer is not affected by acid solution in course of reaction; 2. the non-reaction surface of wafer, not by Mechanical Contact, can not cause mechanical damage; 3. uniformity in good sheet; 4. uniformity etc. between good sheet.The development of wafer double-sided device technology is also more and more higher to the requirement of one side wafer wet etching process parameter, particularly the protection of uniformity in sheet and non-reaction crystal column surface is had to higher specification requirement.
In prior art, wafer one side wet etching is mainly adopted to wafer rear spin-coating technology upwards, its structure as shown in Figure 1, wafer to be cleaned is placed directly on chuck 11, wafer question response is towards upper, and chuck 11 inside are provided with nitrogen pipeline 13, from nitrogen pipeline 13, pass into nitrogen, the formation of air pressure is suspended on chuck 11 wafer, chuck 11 is according to certain speed rotation simultaneously, and the stitch on both sides is fixed wafer, makes wafer can not produce when rotated slip; Then cleaning fluid is delivered to the question response face of wafer by liquid feeding device 12; liquid feeding device 12 can move back and forth at crystal column surface; under the effect that cleaning fluid rotates at chuck 11, flow to crystal round fringes; whole crystal column surface gradually distributes; the question response face that passes into the relative wafer of non-reaction surface that makes wafer of nitrogen is under positive air pressure state, thereby protection cleaning fluid does not touch the non-reaction surface of wafer.But this class technology shows gradually some problems under new Technical Development Requirement: 1, wafer is to be directly placed on chuck 11 at the beginning, non-reaction wafer face and chuck 11 have direct Mechanical Contact, particularly marginal portion, this Mechanical Contact can damage crystal column surface, affects the yields of wafer.2, the interior uniformity of sheet is confined to supply and the spin coating mode of cleaning fluid, can not reach higher requirement; Cleaning fluid is exported from liquid feeding device 12, from delivery outlet toward dirty process, the temperature of cleaning fluid is declining always, the rinse liquid temperature at some place of crystal circle center and the temperature of edge exist very large difference; In addition the distribution of cleaning fluid also there are differences, and particularly, under the situation that has figure, the distributed process of cleaning fluid will be subject to the impact that pattern density distributes.3, for different wafers, its liquor charging structure causes being difficult to realize the thermostatic control of cleaning fluid, cleaning fluid is that the mode of injecting by trace is fed on wafer, its temperature is flowing out after pipeline arrival wafer, variations in temperature is very large, be difficult to guarantee temperature controlled stability, thereby make uniformity between sheet can not reach requirements at the higher level.
Utility model content
The shortcoming of prior art in view of the above, the purpose of this utility model is to provide a kind of wet etching apparatus, and non-reaction wafer face is subject in mechanical damage, sheet the problem such as lack of homogeneity between lack of homogeneity and sheet when solving prior art wet etching.
For achieving the above object and other relevant objects, the utility model provides a kind of wet etching apparatus, and described wet etching apparatus at least comprises: the wafer grabbing device with ring body rotation; Toward the nitrogen pipeline of described ring body; And for accommodating described wafer grabbing device and supplying with the rinse bath of cleaning fluid; Described ring body is made up of two curved surfaces, and the junction of described two curved surfaces connects with rotating shaft, and described ring body is realized closure or openness by this rotating shaft.
Preferably, described wafer grabbing device quantity is 1～8.
Preferably, described curved surface is semicircle anchor ring.
Preferably, also comprise with each this wafer grabbing device and being connected for realizing the revolution device that respectively this wafer grabbing device revolves round the sun in described rinse bath.
Preferably, the inner diameter d of described ring body is 100mm～450mm.
Preferably, the ring edge height h of described ring body is 5mm～500mm.
Preferably, the material of described wafer grabbing device and crystal round fringes contact position is the flexible material of acid resistance corrosion.
Preferably, described nitrogen pipeline is vertically toward described wafer grabbing device.
Preferably, described nitrogen pipeline quantity is set as 1～10.
Preferably, described rinse bath comprises: inside groove; Be wrapped in the water jacket in described inside groove outside; Be connected to the water pump on described water jacket; The filter being connected with described water pump; And be connected in the heater between described water jacket and described filter.
As mentioned above, wet etching apparatus of the present utility model, has following beneficial effect:
1, the non-reaction surface of wafer is avoided producing Mechanical Contact with wafer grabbing device completely, does not need extra processing step protection
The non-reaction surface of wafer;
2, the reaction surface of wafer is downward, passes into nitrogen to the non-reaction surface of wafer simultaneously, can effectively protect the non-reaction surface of wafer not
Touch cleaning fluid;
3, the contact gear ratio of cleaning fluid and crystal column surface is more even, improves the interior uniformity of sheet of wafer wet etching process;
4, can contact cleaning fluid with batch wafer simultaneously, rinse liquid temperature is even simultaneously, greatly improve with uniformity between the sheet of batch wafer wet etching process, while is for the multi-disc wafer of multiple batches of processing in rectangular groove, because of more stable in the temperature control of rinse bath cleaning liquid inside, between the sheet of different batches crystal round etching, uniformity also can be relatively good so.
Brief description of the drawings
Fig. 1 is shown as wet etching apparatus cross-sectional schematic of the prior art.
Fig. 2 is shown as wet etching apparatus schematic side view of the present utility model.
Fig. 3 is shown as wet etching apparatus schematic top plan view of the present utility model.
Fig. 4 and Fig. 5 are shown as the schematic top plan view of the wafer grabbing device of wet etching apparatus of the present utility model.
Element numbers explanation
1 wet etching apparatus
11 chucks
12 liquid feeding devices
13 nitrogen pipeline
2 wet etching apparatus
21 nitrogen pipeline
22 wafer grabbing devices
221 ring bodies
222 rotating shafts
23 rinse baths
231 inside grooves
232 water jackets
233 water pumps
234 filters
235 heaters
The internal diameter of d ring body
The ring edge height of h ring body
Embodiment
By specific instantiation, execution mode of the present utility model is described below, those skilled in the art can understand other advantages of the present utility model and effect easily by the disclosed content of this specification.The utility model can also be implemented or be applied by other different embodiment, and the every details in this specification also can be based on different viewpoints and application, carries out various modifications or change not deviating under spirit of the present utility model.
Refer to Fig. 2 to Fig. 5.It should be noted that, the diagram providing in the present embodiment only illustrates basic conception of the present utility model in a schematic way, satisfy and only show with assembly relevant in the utility model in graphic but not component count, shape and size drafting while implementing according to reality, when its actual enforcement, kenel, quantity and the ratio of each assembly can be a kind of random change, and its assembly layout kenel also may be more complicated.
As shown in Figure 2, the utility model provides a kind of wet etching apparatus 2, and described wet etching apparatus comprises: have the wafer grabbing device 22 of ring body rotation, described wafer grabbing device 22 can be realized rotation; Be connected with this wafer grabbing device 22 for realizing the revolution device that respectively this wafer grabbing device 22 revolves round the sun in described rinse bath, described rotating device and revolution device are the additional structures that is similar to CMP equipment, and this mechanical structure is a kind of general attainable device widely in the industry; Toward the nitrogen pipeline 21 of described ring body 221; And for accommodating described wafer grabbing device and supplying with the rinse bath 23 of cleaning fluid.Described ring body 221 is made up of two curved surfaces, and the junction of described two curved surfaces connects with rotating shaft 222, and described ring body is realized closure or openness by this rotating shaft.
The quantity of described wafer grabbing device 22 is set as 1～8, and in the present embodiment, as shown in Figure 3, wafer grabbing device 22 is preferably 2.
Described ring body 221 curved surfaces can be the anchor ring structures that has certain radian, can be also semicircle anchor ring structures, and in the present embodiment, this curved surface is preferably semicircle anchor ring structure.The inner diameter d of described ring body 221 is 100mm～450mm, and ring edge height h is 5mm～500mm, and in the present embodiment, inner diameter d is set as 100mm, and ring edge height h is set as 500mm.Described wafer grabbing device 22 is the flexible material of acid resistance corrosion with the material of crystal round fringes contact position, various fluorubber materials, neoprene (CR), natural rubber (NR), ethylene propylene diene rubber (EPDM), acrylate rubber and other various rubber can satisfy the demands, in the present embodiment, this material selection PTFE.
Described nitrogen pipeline 21 is vertically toward described wafer grabbing device 22, and quantity is set as 1～10, and in the present embodiment, nitrogen pipeline 21 is preferably 1.
Described rinse bath 23 also comprises: inside groove 231; Be wrapped in the water jacket 232 in described inside groove outside; Be connected to the water pump 233 on described water jacket, for delivery of cleaning fluid; The filter 234 being connected with described water pump, for filtering the impurity of cleaning fluid and being connected in the heater 235 for heated wash liquid between described water jacket 232 and described filter 234.
The wet etching apparatus 2 that the utility model provides is applicable to process the wet etch process of wafer one side.The ring body 221 of wafer grabbing device 22 is by the crawl of the control wafer of stepper, ensure that the dynamics and the position that capture can be more accurate, this ring body 221 is made up of two semicircle anchor ring structures, and semicircle anchor ring structure is by the closure or openness of rotating shaft 222 implement devices of junction.In the present embodiment, the described ring body 221 of two semicircle anchor ring structure compositions is non-closing structure, as shown in Figure 4.The ring body 221 of described wafer grabbing device 22 is opened from joint, by the placement that faces down of wafer question response, then close ring, as shown in Figure 5, wafer is firmly fixed in wafer grabbing device 22, wafer grabbing device 22 is the side of wafer with contacting of wafer simultaneously, and crystal column surface does not touch wafer grabbing device 22 completely, can not bring the mechanical damage of crystal column surface, then, the nitrogen pipeline 21 of wafer grabbing device 22 tops is to the non-reaction surface supplying nitrogen of wafer, gas flow can be 0SLM～50SLM, in the present embodiment, be set as 50SLM, make reaction surface that the relative wafer of non-reaction surface of wafer treats under positive air pressure state, simultaneously wafer grabbing device 22 is put into rinse bath 23 by wafer with level or with level mode in a certain angle, the angle of wafer and level can be 0 degree～15 degree, in the present embodiment, wafer is with 0 degree horizontal positioned, Contact cleaning fluid while making each reflecting point of wafer reaction surface substantially same, greatly improve uniformity between the sheet of crystal round etching, in rinse bath 23, fill the cleaning fluid of anticipating, the reaction surface of wafer submerges in cleaning fluid completely, because wafer grabbing device 22 and the material of crystal round fringes contact position are the flexible material of acid resistance corrosion, so wafer grabbing device 22 also can submerge in cleaning fluid, but the upper end of the ring edge of wafer grabbing device 22 is still on liquid level, and contacting of the non-reaction surface of wafer and cleaning fluid can be effectively avoided in the positive air pressure that nitrogen forms and the protection of the ring edge of wafer grabbing device 22, after said process completes, as shown in Figure 2, wafer grabbing device 22 drives wafer rotation under the driving of additional rotating device, and rotational velocity can be 0rmp～100rmp, is set as 100rmp in the present embodiment.Meanwhile, as shown in Figure 3, the multiple wafer grabbing devices 22 in rinse bath 23 can be around the revolution of the fixing center of circle under the driving of additional revolution device, and revolution speed can be 0rmp～10rmp, is set as 10rmp in the present embodiment.Uniformity between the sheet of the rotation of wafer grabbing device 22 and the fine raising crystal round etching of revolution energy; Question response finishes rear taking-up wafer, and etching process has just completed.In etched process, in rinse bath 23, constantly carrying out replacing and the thermostatic control of cleaning fluid, cleaning fluid discharge in inside groove 231 is to water jacket 232, take and send into the cleaning fluid in water jacket 232 away filter 234 by water pump 233 again, filter 234 carries out filtration treatment to cleaning fluid, the Impurity removal that reaction in cleaning fluid is stayed, then by heater 235, cleaning fluid is carried out to temperature control, finally send again the etching of inside groove 231 for wafer reaction surface back to.This slot type design can better be controlled rinse liquid temperature, the multi-disc wafer to multiple batches of processing in rectangular groove simultaneously, and more stable because of the control of groove cleaning liquid inside temperature, the etch uniformity between different batches wafer also can be relatively good so.
In sum, the utility model provides a kind of wet etching apparatus, and described wet etching apparatus at least comprises: the wafer grabbing device with ring body rotation; Toward the nitrogen pipeline of described ring body; And for accommodating described wafer grabbing device and supplying with the rinse bath of cleaning fluid; Described ring body is made up of two curved surfaces, and the junction of described two curved surfaces connects with rotating shaft, and described ring body is realized closure or openness by this rotating shaft.Wafer one side wet etching apparatus of the present utility model carrys out gripping wafer by wafer grabbing device, has effectively avoided and the Mechanical Contact of crystal column surface, and protection wafer is injury-free; The positive air pressure that nitrogen forms can effectively be avoided the non-reaction surface of wafer and contacting of cleaning fluid with the protection of the ring edge of wafer grabbing device; Wafer grabbing device is put into cleaning fluid by wafer in a horizontal manner, has carried out rotation, revolution in the rinse bath of slot type design simultaneously, makes the interior uniformity of sheet of crystal round etching reach very high level; Can contact cleaning fluid with batch wafer reaction surface simultaneously, rinse liquid temperature is even simultaneously, ensure greatly to improve with uniformity between the sheet of batch crystal round etching, the device of slot type design simultaneously can better be controlled rinse liquid temperature, for the multi-disc wafer of multiple batches of processing in rectangular groove, because of more stable in the temperature control of rinse bath cleaning liquid inside, between the sheet of different batches crystal round etching, uniformity also can be relatively good so.So the utility model has effectively overcome various shortcoming of the prior art and tool high industrial utilization.
Above-described embodiment is illustrative principle of the present utility model and effect thereof only, but not for limiting the utility model.Any person skilled in the art scholar all can, under spirit of the present utility model and category, modify or change above-described embodiment.Therefore, have in technical field under such as and conventionally know that the knowledgeable modifies or changes not departing from all equivalences that complete under spirit that the utility model discloses and technological thought, must be contained by claim of the present utility model.
Claims (10)
1. a wet etching apparatus, is characterized in that, described wet etching apparatus at least comprises: the wafer grabbing device with ring body rotation; Toward the nitrogen pipeline of described ring body; And for accommodating described wafer grabbing device and supplying with the rinse bath of cleaning fluid; Described ring body is made up of two curved surfaces, and the junction of described two curved surfaces connects with rotating shaft, and described ring body is realized closure or openness by this rotating shaft.
2. wet etching apparatus according to claim 1, is characterized in that: described wafer grabbing device quantity is 1～8.
3. wet etching apparatus according to claim 1, is characterized in that: described curved surface is semicircle anchor ring.
4. wet etching apparatus according to claim 1, is characterized in that: also comprise with each this wafer grabbing device and being connected for realizing the revolution device that respectively this wafer grabbing device revolves round the sun in described rinse bath.
5. wet etching apparatus according to claim 1, is characterized in that: the inner diameter d of described ring body is 100mm～450mm.
6. wet etching apparatus according to claim 1, is characterized in that: the ring edge height h of described ring body is 5mm～500mm.
7. wet etching apparatus according to claim 1, is characterized in that: the material of described wafer grabbing device and crystal round fringes contact position is the flexible material of acid resistance corrosion.
8. wet etching apparatus according to claim 1, is characterized in that: described nitrogen pipeline is vertically toward described wafer grabbing device.
9. wet etching apparatus according to claim 1, is characterized in that: described nitrogen pipeline quantity is set as 1～10.
10. wet etching apparatus according to claim 1, is characterized in that: described rinse bath comprises: inside groove; Be wrapped in the water jacket in described inside groove outside; Be connected to the water pump on described water jacket; The filter being connected with described water pump; And be connected in the heater between described water jacket and described filter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420060913.8U CN203733767U (en) | 2014-02-10 | 2014-02-10 | Wet etching device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420060913.8U CN203733767U (en) | 2014-02-10 | 2014-02-10 | Wet etching device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203733767U true CN203733767U (en) | 2014-07-23 |
Family
ID=51203818
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420060913.8U Expired - Lifetime CN203733767U (en) | 2014-02-10 | 2014-02-10 | Wet etching device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203733767U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105060241A (en) * | 2015-07-17 | 2015-11-18 | 上海交通大学 | Wet etching diversion trench device and usage thereof |
| CN106816371A (en) * | 2015-12-01 | 2017-06-09 | 株洲南车时代电气股份有限公司 | IGBT wafer manufacturing methods and device |
| CN108321104A (en) * | 2018-03-15 | 2018-07-24 | 福建省福联集成电路有限公司 | A kind of Etaching device with novel pipeline structure |
| CN112992652A (en) * | 2019-12-16 | 2021-06-18 | 中芯集成电路（宁波）有限公司 | Wet cleaning device and cleaning method |
-
2014
- 2014-02-10 CN CN201420060913.8U patent/CN203733767U/en not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105060241A (en) * | 2015-07-17 | 2015-11-18 | 上海交通大学 | Wet etching diversion trench device and usage thereof |
| CN106816371A (en) * | 2015-12-01 | 2017-06-09 | 株洲南车时代电气股份有限公司 | IGBT wafer manufacturing methods and device |
| CN108321104A (en) * | 2018-03-15 | 2018-07-24 | 福建省福联集成电路有限公司 | A kind of Etaching device with novel pipeline structure |
| CN108321104B (en) * | 2018-03-15 | 2024-01-23 | 福建省福联集成电路有限公司 | Etching device with pipeline structure |
| CN112992652A (en) * | 2019-12-16 | 2021-06-18 | 中芯集成电路（宁波）有限公司 | Wet cleaning device and cleaning method |
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Legal Events
| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20140723 |