KR102470463B1 - Apparatus for Treating Substrate and the Method thereof - Google Patents

Abstract

The present invention relates to a substrate processing apparatus and a substrate processing method, and more particularly, to an exhaust system for exhausting process gas inside a chemical discharge guide during substrate processing and exhausting process gas inside the chemical discharge guide after substrate processing is completed. A substrate processing apparatus and a substrate processing method provided therewith are provided.
To realize this, a substrate processing apparatus of the present invention includes a substrate processing chamber, a chemical discharge guide for inducing discharge of a chemical solution separated from a substrate, a first exhaust port provided inside the chemical discharge guide, and a chemical discharge guide. and an opening/closing member that opens the first exhaust port and closes the second exhaust port during substrate processing, and closes the first exhaust port and opens the second exhaust port after substrate processing is completed.

Description

Substrate processing apparatus and substrate processing method {Apparatus for Treating Substrate and the Method thereof}

The present invention relates to a substrate processing apparatus and a substrate processing method, and more particularly, during substrate processing, process gases inside a chemical discharge guide are preferentially exhausted, and after substrate processing is completed, process gases remaining inside a chamber are discharged from a chemical liquid. It relates to a substrate processing apparatus and a substrate processing method that are guided to the outside of a discharge guide and smoothly exhausted.

With the recent rapid development of information communication and the popularization of information media such as computers, semiconductor devices are also rapidly developing. In addition, in terms of its functionality, various methods are being researched and developed to maximize device performance while reducing the size of individual devices formed on a substrate according to the trend of high device integration of semiconductor devices.

In general, a semiconductor device repeatedly undergoes a plurality of substrate processes such as lithography, deposition and etching, photoresist coating, development, cleaning and drying processes, and the like. are manufactured

Each process is performed using a process fluid suitable for each purpose, and since a process environment suitable for each process is required, the substrate is generally accommodated in a chamber in which an environment corresponding to each process is created.

Particles such as metal impurities and organic matter remain on the substrate through each process, and such contaminants cause defects in the substrate process and adversely affect product yield and reliability.

Therefore, cleaning and drying processes that are repeatedly performed upon completion of each process to remove particles are very important, and each process is performed in a closed process chamber to prevent the inflow of external particles.

Cleaning can be classified into wet cleaning and dry cleaning, and among them, wet cleaning is widely used in the semiconductor manufacturing field. Wet cleaning is a method of continuously removing contaminants by using chemicals suitable for contaminants in each step, and uses a large amount of acid and alkali solutions to remove contaminants remaining on the substrate.

In general, a wet cleaning apparatus for a semiconductor substrate is a batch type in which a plurality of substrates are immersed in a bath filled with a chemical solution and processed, and a sheet type in which a single substrate is horizontally disposed and processed. (single type).

In the single-wafer type cleaning device, a process of spraying a cleaning agent on the surface of a substrate rotating at high speed to clean the surface of the substrate with centrifugal force, a process of rinsing with ultrapure water (DI), and liquid isopropyl alcohol (IPA) on the surface of the substrate ) A process of drying the substrate using a drying liquid such as may be performed.

The chamber 1 for substrate processing as a single-wafer type cleaning apparatus shown in FIG. 1 includes a chuck 22 supporting a substrate W, a support 21 supporting the chuck 22, and an upper portion of the substrate W. a fluid supply means 30 for supplying fluid to the chuck 22 and a chemical solution discharge guide provided to surround the substrate W at a predetermined distance from the chuck 22 and to collect the fluid scattered from the substrate W (20).

A chuck pin 23 for seating the substrate W is provided on the chuck 22 .

The support 21 may be a drive shaft that rotates or vertically drives the chuck 22 .

When the substrate processing process starts, the chuck 22 and the substrate W rotate due to the driving of the driving shaft 21, and the fluid from the fluid supply means 30 on the rotating substrate W is supplied

The fluid subjected to substrate processing on the substrate (W) is scattered outward by the centrifugal force of the substrate (W), descends along the chemical liquid discharge guide 20 and is collected, and passes through a drain line (not shown). It is discharged.

Process gas inside the chamber 100 is exhausted through the first exhaust port 41 inside the chemical discharge guide 20 and the second exhaust port 42 outside the chemical discharge guide.

At this time, while the substrate processing is in progress, only the first exhaust port 41 is opened to facilitate the discharge of the substrate processing fluid and to ventilate the surroundings of the substrate W to maintain an appropriate substrate processing environment, thereby opening the chemical solution discharge guide 20 ), it was necessary to preferentially exhaust the process gas inside.

In addition, after the substrate processing is completed, only the second exhaust port 42 is opened to control the air flow balance inside the chamber 100 and smoothly exhaust the process gas so that the process gas outside the chemical discharge guide 20 is preferentially discharged. It was necessary to exhaust.

As an example of the prior art for a substrate processing apparatus as described above, there is Korean Patent Publication No. 10-2016-0057036.

The present invention has been made to solve the above problems, and a substrate equipped with an exhaust system for maintaining an appropriate substrate processing environment by promoting the discharge of a substrate processing fluid during substrate processing and ventilating the surroundings of the substrate. It is intended to provide a processing device and a substrate processing method.

In addition, it is intended to provide a substrate processing apparatus and a substrate processing method equipped with an exhaust system for adjusting air flow balance inside the chamber and smoothly exhausting process gas after substrate processing is completed.

A substrate processing apparatus of the present invention for realizing the above object is a chamber in which substrate processing is performed, a chemical solution discharge guide for inducing discharge of a chemical solution separated from the substrate, and a first device provided inside the chemical solution discharge guide. A first exhaust port, a second exhaust port provided outside the chemical solution discharge guide, the first exhaust port is open and the second exhaust port is closed during substrate processing, and the first exhaust port is closed after the substrate processing is completed, and the second exhaust port is closed. It may include an opening and closing member that opens the exhaust port.

The first exhaust port and the second exhaust port are provided side by side at the lower end of the chamber with the chemical solution discharge guide interposed therebetween, and the opening/closing member is provided below the chemical solution discharge guide to open the first exhaust port or the second exhaust port. It can be made to open and close.

The opening/closing member may be provided to open and close the first exhaust port or the second exhaust port by sliding inward or outward of the chemical liquid discharge guide.

The opening/closing member is provided to be rotatable, and an opening is provided on the opening/closing member, so that the opening is positioned above the first exhaust port when substrate processing is performed, the opening/closing member rotates to open the first exhaust port, When the processing of the substrate is completed, the opening/closing member may be rotated so that the opening is positioned above the second exhaust port to open the second exhaust port.

The first exhaust port is provided at a lower end of the chamber, the second exhaust port is provided on an inner wall of one side of the chamber, the opening/closing member is fixed to the chemical solution discharge guide, and drives the chemical solution discharge guide vertically. A driving unit may be provided to open the first exhaust port and close the second exhaust port when the chemical discharge guide ascends, and to close the first exhaust port and open the second exhaust port when the chemical discharge guide descends. have.

In addition, the substrate processing apparatus of the present invention includes a chamber in which substrate processing is performed, a chemical solution discharge guide for inducing discharge of a chemical solution separated from the substrate, an integrated exhaust port provided in the chamber, and a chemical discharge guide during substrate processing. It may include an opening/closing member for inducing process gases outside the chemical liquid discharge guide to be exhausted through the integrated exhaust port and exhausted through the integrated exhaust port after processing of the substrate is completed.

The integrated exhaust port is provided on an inner wall of one side of the chamber outside the chemical discharge guide, the opening/closing member is fixed to an outer surface of the chemical discharge guide, and a driving unit for vertically driving the chemical discharge guide is provided. When the chemical discharge guide ascends, the upper side of the integrated exhaust port is blocked and the process gas inside the chemical discharge guide is preferentially exhausted. When the chemical discharge guide descends, the upper side of the integrated exhaust port is opened and the outer side of the chemical discharge guide Process gases may be preferentially exhausted.

Upper and lower ends of the opening/closing member and the integrated exhaust port may be provided in a ring shape centered on the substrate.

In addition, the substrate processing method of the present invention may include a step of performing a substrate treatment process and exhausting process gas inside the chemical discharge guide, and a step of exhausting process gas outside the chemical discharge guide after the substrate treatment process is completed. have.

According to the substrate processing apparatus and substrate processing method according to the present invention, during substrate processing, only the first exhaust port is opened to preferentially exhaust the process gas inside the chemical discharge guide, thereby promoting the discharge of the substrate processing fluid and cleaning the surroundings of the substrate. Ventilation can maintain an appropriate substrate processing environment.

In addition, after the substrate processing is completed, only the second exhaust port is opened to preferentially exhaust the process gas outside the chemical discharge guide, so that the air flow balance inside the chamber can be adjusted and the process gas can be smoothly exhausted.

1 is a view schematically showing the configuration of a substrate processing apparatus according to the prior art.
2 is a view schematically showing that the opening and closing member is driven to the outside of the liquid discharge guide to open the first exhaust port and close the second exhaust port according to the first embodiment of the present invention.
3 is a view schematically showing that the opening/closing member is driven to the inside of the liquid discharge guide to close the first exhaust port and open the second exhaust port according to the first embodiment of the present invention.
Figure 4 schematically shows that the opening and closing member rotates to open the first exhaust port and close the second exhaust port (A), or close the first exhaust port and open the second exhaust port (B) according to the first embodiment of the present invention. Floor plan.
5 is a view schematically showing that the opening/closing member opens the first exhaust port and closes the second exhaust port as the liquid discharge guide rises according to the first embodiment of the present invention.
6 is a view schematically showing that the opening/closing member closes the first exhaust port and opens the second exhaust port as the chemical discharge guide descends according to the first embodiment of the present invention.
FIG. 7 is a view schematically showing that the chemical discharge guide is raised and the opening/closing member closes the upper side of the exhaust port and first discharges the fluid inside the chemical discharge guide according to the second embodiment of the present invention.
8 is a view schematically showing that the liquid discharge guide descends and the opening/closing member closes the lower side of the exhaust port and first discharges the fluid outside the liquid discharge guide according to the second embodiment of the present invention.
9 is a flowchart schematically illustrating a substrate processing method according to the present invention.

Hereinafter, the configuration and operation of a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings.

A substrate processing apparatus according to a first embodiment of the present invention will be described with reference to FIGS. 2 to 6 .

A substrate processing apparatus according to a first embodiment of the present invention includes a chamber 100 in which a substrate W is processed, a chemical solution discharge guide 200 for inducing discharge of a chemical solution separated from the substrate W, and The first exhaust outlet 410 provided inside the chemical discharge guide 200, the second exhaust outlet 420 provided outside the chemical discharge guide 200, and the first exhaust outlet 410 during substrate processing. and an opening/closing member 300 that opens and closes the second exhaust port 420, and closes the first exhaust port 410 and opens the second exhaust port 420 after substrate processing is completed.

The substrate W may be a silicon wafer serving as a semiconductor substrate. However, the present invention is not limited thereto, and the substrate W may be a transparent substrate such as glass used for a flat panel display device such as a liquid crystal display (LCD) or a plasma display panel (PDP).

The shape and size of the substrate W are not limited by the drawings, and may have substantially various shapes and sizes, such as circular and rectangular plates. The size and shape of the chamber 100, the liquid discharge guide 200, and the spin chuck 122 may also be changed according to the shape and size of the substrate W.

The spin chuck 122 is provided with a plurality of chuck pins 123 so that the substrate W can be seated thereon. The chuck pins 123 may be arranged at regular intervals along the circumference of the substrate (W). The number and shape of the chuck pins 123 may be variously changed.

A drive shaft 121 for rotating the spin chuck 122 is connected to a lower portion of the spin chuck 122 . A drive unit (not shown) including a motor providing rotational force is connected to the drive shaft 121 to rotate the drive shaft 121 and the spin chuck 122 at a predetermined speed.

A liquid or gaseous cleaning agent for removing an object to be cleaned is supplied to the substrate (W). A plurality of cleaning agents may be used as the cleaning agent depending on the type to be treated. For example, an organic solvent and N2 gas may be used to remove the resist. In addition, water, hydrogen fluoride HF, IPA, and N2 gas may be used to remove SiO. In addition, hydrochloric acid HCl, ozone O3, and N2 gas may be used to remove the metal. In addition, O3 and N2 gases can be used to remove organic substances other than resist. In addition, in order to remove other particles, ammonia-hydrogenated APM, N2 gas, N2 gas or argon Ar may be used. In addition, water, IPA, and N2 gas may be used to remove ions of fluorine F, chlorine Cl, and ammonia NH4. In addition, the fluid sprayed through the nozzle 133 may be a drying agent such as ultrapure water (DI) and liquid isopropyl alcohol (IPA). These detergents and drying agents are collectively referred to as 'chemical solutions'.

A fluid supply unit 130 may be provided to supply the plurality of liquid chemicals to the substrate (W).

The fluid supply means 130 includes a nozzle 133 for injecting a chemical solution onto the substrate W, a chemical solution supply unit (not shown) provided outside the chamber 100 and supplying the chemical solution, and the nozzle ( 133) and a nozzle pipe 132 connecting the chemical solution supply unit.

The nozzle 133 injects the chemical solution onto the substrate W from the top of the substrate W, and the chemical solution that reaches the substrate W is connected to the spin chuck 122 and the substrate W. It is scattered around by the rotating centrifugal force.

The chemical liquid discharge guide 200 guides the chemical liquid scattered from the substrate W during the cleaning process to ensure smooth discharge.

The liquid medicine discharge guide 200 may be made of a polytetrafluoroethylene (PTFE) material. Polytetrafluoroethylene (PTFE) has excellent chemical resistance and does not change its properties even at high temperatures, so it is a material used for "cases" and "heat exchangers" of plating heaters. In addition, it is a non-toxic material with good electrical properties, non-flammability, weather resistance, non-adhesiveness and a small wear coefficient, and can withstand the substrate processing process environment inside the chamber.

The chemical liquid discharge guide 200 may be formed in a shape surrounding and spaced apart from the spin chuck 122 on which the substrate W is placed, and may be provided in multiple layers around the spin chuck 122. .

At least one recovery cup (211, 212) is formed along the sidewall of the plurality of layers of the chemical discharge guide (200, 201, 202, 203), and a drain line (not shown) is connected to the at least one recovery cup (211, 212), respectively, so that different types of The chemical solution may be separated and discharged.

The at least one recovery cup (211, 212) is formed in multiple stages with different inlet heights, and the spin chuck 122 moves up and down by the driving of the drive shaft 121 according to the chemical solution used, and the substrate (W) Different types of liquid medicines can be separated and discharged to different recovery cups 211 and 212 by sequentially corresponding to the inlets of the respective recovery cups 211 and 212 in height.

The first exhaust port 410 is provided at the lower end of the recovery cups 211 and 212 inside the chemical liquid discharge guide 200 and preferentially exhausts process gas inside the chemical liquid discharge guide 200, thereby already performing substrate processing. To facilitate the discharge of one fluid and to ventilate the surroundings of the substrate (W) to maintain an appropriate substrate processing environment.

The second exhaust port 420 is provided on the outside of the chemical discharge guide 200 to preferentially exhaust the process gas outside the chemical discharge guide 200 after substrate processing is completed, so that the inside of the chamber 100 Balance the air flow and ensure smooth exhaust.

The first exhaust port 410 may be provided in the recovery cup 212 formed at the outermost side of the at least one recovery cup 211 and 212 with the substrate W as the center.

The opening/closing member 300 of the present invention opens the first exhaust port 410 and the second exhaust port 410 so that only the first exhaust port 410 is open during substrate processing and only the second exhaust port 420 is opened after substrate processing is completed. By opening and closing the 420, the processing gas inside the chamber 100 can be adjusted and balanced.

As shown in FIGS. 2 to 4 , the first exhaust port 410 and the second exhaust port 420 may be provided side by side at the lower end of the chamber 100 with the chemical solution discharge guide 200 interposed therebetween. have.

The opening/closing member 300 may be provided below the chemical discharge guide 200, and may slide inward or outward of the chemical discharge guide 200 to open the first exhaust port 410 or the second exhaust port 420. ) to open and close.

When processing of the substrate proceeds, as shown in FIG. 2 , the opening/closing member 300 slides to the outside of the liquid chemical discharge guide 200 to open the first exhaust port 410 and open the second exhaust port 420. By blocking the process gas inside the liquid chemical discharge guide 200 is preferentially exhausted.

When the substrate treatment is completed, as shown in FIG. 3 , the opening/closing member 300 slides inside the chemical discharge guide 200 to block the first exhaust port 410 and open the second exhaust port 420. By opening, the processing gas outside the chemical discharge guide 200 is preferentially exhausted.

In addition, as shown in FIG. 4 , the opening/closing member 300 is rotatably provided on the lower side of the chemical discharge guide 200 to open and close the first exhaust port 410 or the second exhaust port 420. It can be done.

The opening 310 is provided in the opening/closing member 300, and the opening 310 is positioned above the first exhaust port 410 or the second exhaust port 420 by rotating the opening/closing member 300. It is made to open and close the first exhaust port 410 or the second exhaust port 420 .

When substrate processing proceeds, the opening/closing member 300 rotates so that the opening 310 is located above the first exhaust port 410, as shown in FIG. ) is opened and the second exhaust port 420 is blocked, thereby preferentially exhausting the process gas inside the chemical discharge guide 200 .

When the substrate processing is completed, as shown in FIG. ) and opening the second exhaust port 420 to preferentially exhaust the process gas outside the chemical discharge guide 200 .

As shown in FIGS. 5 and 6 , the first exhaust port 410 and the second exhaust port 420 are disposed between the lower ends of the recovery cups 211 and 212 inside the chemical liquid discharge guide 200 and the chamber 100. It may be provided on one inner wall, respectively.

The opening/closing member 300 includes a first opening/closing member 300a fixed to an inner lower end of the chemical discharge guide 200 and a second opening/closing member 300a fixed to an outer surface of the chemical discharge guide 200. It may be member 300b.

A driving unit (not shown) is provided in the chemical discharge guide 200 so that the chemical discharge guide 200 equipped with the opening/closing member 300 is driven up and down to open the first exhaust port 310 or the second exhaust port. (420) is made to open and close.

When the substrate processing proceeds, the chemical discharge guide 200 equipped with the opening/closing member 300, as shown in FIG. 5, is driven upward to open the first exhaust port 410 and open the second opening/closing member ( By blocking the second exhaust port 420 with 300b), the processing gas inside the chemical discharge guide 200 is preferentially exhausted.

When the substrate processing is completed, the chemical discharge guide 200 equipped with the opening/closing member 300 is driven down as shown in FIG. and opening the second exhaust port 420 to preferentially exhaust the process gas outside the liquid chemical discharge guide 200 .

The opening/closing member 300 may be provided in the chemical solution discharge guide 203 positioned at the outermost side of the plurality of chemical discharge guides 200 , 201 , 202 , and 203 with respect to the substrate W.

The first exhaust port 410, the second exhaust port 420, and the opening/closing member may be provided in plurality.

A substrate processing apparatus according to a second embodiment of the present invention will be described with reference to FIGS. 7 to 9 .

A substrate processing apparatus according to the second embodiment of the present invention is based on the configuration of the chamber 100 described in the first embodiment, and includes the first exhaust port 410 and the second embodiment described in the first embodiment. It is made including an integrated exhaust port 430 instead of the exhaust port 420.

In addition, during substrate processing, process gas inside the chemical discharge guide 200 is exhausted through the integrated exhaust port 430, and after substrate processing is completed, process gas outside the chemical discharge guide 200 is exhausted through the integrated exhaust port 430. It includes an opening and closing member 300 that induces exhaust through.

The integrated exhaust port 430 may be provided on an inner wall of one side of the chamber outside the chemical discharge guide 200, and the opening/closing member 300 is fixed to an outer surface of the chemical discharge guide 200. It is provided.

A driving unit (not shown) is provided in the chemical discharge guide 200 so that the chemical discharge guide 200 equipped with the opening/closing member 300 is driven up and down.

When the substrate processing proceeds, as shown in FIG. 7 , the liquid chemical discharge guide 200 rises, and the opening/closing member 300 meets the upper end 431 of the integrated exhaust port 430 to open the integrated exhaust port 430. and the external airflow of the chemical discharge guide 200 is blocked.

That is, the airflow outside the chemical discharge guide 200 is blocked by the opening/closing member 300 and cannot be exhausted, and the lower space of the chemical discharge guide 200 where the process gas inside the chemical discharge guide 200 rises. flows and is preferentially exhausted through the integrated exhaust port 430.

When the substrate processing is completed, as shown in FIG. 8 , the chemical discharge guide 200 descends, and the opening/closing member 300 meets the lower end 432 of the integrated exhaust port 430 to form the integrated exhaust port 430. and the inner process gas of the liquid chemical discharge guide 200 are blocked.

That is, process gas inside the chemical liquid discharge guide 200 is blocked by the opening/closing member 300 and cannot be exhausted, and process gas outside the chemical liquid discharge guide 200 preferentially passes through the integrated exhaust port 430. exhausted

The top 431 and the bottom 432 of the integrated exhaust port 430 and the opening/closing member 300 are provided in a ring shape centered on the substrate W, so that the external airflow and The inner process gas can be efficiently separated and exhausted.

The chemical discharge guide 200 may be provided in a plurality of layers, and the opening/closing member 300 is a chemical discharge guide (located at the outermost side with respect to the substrate W) among the plurality of chemical discharge guides 200, 201, 202, and 203. 203) may be provided.

The integrated exhaust port 430 may be provided in plurality.

Referring to FIG. 9, a substrate processing method according to the present invention will be described.

Step S10 is a step in which a substrate treatment process is performed and process gas inside the chemical discharge guide 200 is exhausted.

According to the first embodiment, the chamber 100 in which the substrate treatment process is performed includes a first exhaust port 410 provided inside the chemical discharge guide 200 and provided outside the chemical discharge guide 200. It includes a second exhaust port 420 and an opening/closing member 300 for opening and closing the first exhaust port 410 and the second exhaust port 420.

When the substrate processing process proceeds, the opening/closing member 300 opens the first exhaust port 410 and closes the second exhaust port 420 to exhaust process gas inside the liquid discharge guide 200, thereby already processing the substrate. To facilitate the discharge of the fluid performed and to ventilate the surroundings of the substrate (W) to maintain an appropriate substrate processing environment.

The first exhaust port 410 and the second exhaust port 420 are provided side by side at the lower end of the chamber 100 with the chemical solution discharge guide 200 interposed therebetween, and the opening/closing member 300 is the chemical solution discharge guide ( 200), the opening/closing member 300 slides to the outside of the chemical discharge guide 200 to open the first exhaust port 410 and the second exhaust port 420. Can be closed.

In addition, in the case of the opening/closing member 300 having an opening 310 and being rotatably provided, the opening 310 is rotated so that the opening 310 is located above the first exhaust port 410, The first exhaust port 410 may be opened and the second exhaust port 420 may be closed.

In addition, the first exhaust port 410 is provided at a lower end of the chamber 100, the second exhaust port 420 is provided on an inner wall of one side of the chamber 100, and the opening/closing member 300 is the chemical solution discharge guide. When a driving unit fixed to the 200 and driving the chemical discharge guide 200 up and down is provided, the chemical discharge guide 200 is raised to open the first exhaust port 410 and the second exhaust port. (420) can be closed.

In addition, according to the second embodiment, the chamber 100 in which the substrate processing process is performed includes an integrated exhaust port 430, an opening/closing member 300 fixed to an outer surface of the chemical solution discharge guide 200, and the chemical solution. It includes a driving unit for driving the discharge guide 200 up and down.

When the substrate processing process progresses, the chemical discharge guide 200 is raised to block the upper side of the integrated exhaust port 430 so that process gas inside the chemical discharge guide 200 is preferentially exhausted.

Step S20 is a step in which the substrate treatment process is completed and process gas outside the chemical discharge guide 200 is exhausted.

According to the first embodiment, the opening/closing member 300 closes the first exhaust port 410 and opens the second exhaust port 420 to exhaust process gas outside the chemical discharge guide 200.

The first exhaust port 410 and the second exhaust port 420 are provided side by side at the lower end of the chamber 100 with the chemical solution discharge guide 200 interposed therebetween, and the opening/closing member 300 is the chemical solution discharge guide ( 200), the opening/closing member 300 slides inside the chemical discharge guide 200 to close the first exhaust port 410 and open the second exhaust port 420.

Further, in the case of the opening/closing member 300 having the opening 310 and being rotatably provided, the opening 310 is rotated so that the opening 310 is located above the second exhaust port 420. The second exhaust port 420 may be opened and the first exhaust port 410 may be closed.

In addition, the first exhaust port 410 is provided at a lower end of the chamber 100, the second exhaust port 420 is provided on an inner wall of one side of the chamber 100, and the opening/closing member 300 is the chemical solution discharge guide. When a driving unit is provided fixed to the 200 and drives the chemical discharge guide 200 up and down, the chemical discharge guide 200 is lowered to close the first exhaust port 410 and the second exhaust port ( 420) can be opened.

In addition, according to the second embodiment, by lowering the chemical liquid discharge guide 200 to open the upper side of the integrated exhaust port 430, process gas outside the chemical liquid discharge guide 200 can be preferentially exhausted.

As described above, the substrate processing apparatus and substrate processing method of the present invention open only the first exhaust port 410 during substrate processing to preferentially exhaust the process gas inside the chemical discharge guide 200, thereby performing substrate processing. It is possible to provide an exhaust system for maintaining an appropriate substrate processing environment by promoting discharge of the substrate W and ventilating the periphery of the substrate W.

In addition, after the substrate processing is completed, only the second exhaust port 420 is opened to preferentially exhaust the process gas outside the chemical discharge guide 200 to adjust the air flow balance inside the chamber 100 and smoothly exhaust the process gas. An exhaust system can be provided.

The present invention is not limited to the above-described embodiments, and obvious modifications can be made by those skilled in the art to which the present invention belongs without departing from the technical spirit of the present invention claimed in the claims, and such modifications Implementations are within the scope of the present invention.

W: substrate 100: chamber
121: chuck support 122: chuck
123: chuck pin 130: supply means
132: nozzle pipe 133: nozzle
200,201,202,203: Chemical discharge guide
211,212: recovery cup 300: opening and closing member
300a: first opening and closing member 300b: second opening and closing member
410: first exhaust port 420: second exhaust port
430: integrated exhaust 431: top of integrated exhaust
432: lower integrated exhaust port

Claims (21)

a chamber in which a substrate is processed;
a chemical solution discharge guide for inducing discharge of the chemical solution separated from the substrate;
a first exhaust port provided inside the chemical discharge guide;
a second exhaust port provided outside the chemical liquid discharge guide;
An opening/closing member that opens the first exhaust port and closes the second exhaust port during substrate processing, and closes the first exhaust port and opens the second exhaust port after substrate processing is completed;
the first exhaust port and the second exhaust port are provided side by side at a lower end of the chamber with the chemical solution discharge guide interposed therebetween;
the opening/closing member is provided below the chemical discharge guide to open and close the first exhaust port or the second exhaust port;
A substrate processing apparatus characterized in that. delete a chamber in which a substrate is processed;
a chemical solution discharge guide for inducing discharge of the chemical solution separated from the substrate;
a first exhaust port provided inside the chemical discharge guide;
a second exhaust port provided outside the chemical liquid discharge guide;
and an opening/closing member that opens the first exhaust port and closes the second exhaust port during substrate processing, and closes the first exhaust port and opens the second exhaust port after substrate processing is completed, wherein the opening/closing member includes the chemical discharge guide. The substrate processing apparatus characterized in that provided to open and close the first exhaust port or the second exhaust port by sliding inward or outward of the. a chamber in which a substrate is processed;
a chemical solution discharge guide for inducing discharge of the chemical solution separated from the substrate;
a first exhaust port provided inside the chemical discharge guide;
a second exhaust port provided outside the chemical liquid discharge guide;
An opening/closing member that opens the first exhaust port and closes the second exhaust port during substrate processing, and closes the first exhaust port and opens the second exhaust port after substrate processing is completed, wherein the opening/closing member is rotatably provided. become;
An opening is provided on the opening and closing member;
When the substrate processing progresses, the opening/closing member is rotated so that the opening is located above the first exhaust port, and the first exhaust port is opened;
When the substrate processing is finished, the opening/closing member is rotated so that the opening is located above the second exhaust port, and the second exhaust port is opened;
A substrate processing apparatus characterized in that. a chamber in which a substrate is processed;
a chemical solution discharge guide for inducing discharge of the chemical solution separated from the substrate;
a first exhaust port provided inside the chemical discharge guide;
a second exhaust port provided outside the chemical liquid discharge guide;
and an opening/closing member that opens the first exhaust port and closes the second exhaust port during substrate processing, and closes the first exhaust port and opens the second exhaust port after substrate processing is completed; provided at the bottom;
The second exhaust port is provided on an inner wall of one side of the chamber;
the opening/closing member is fixed to the liquid medicine discharge guide;
A driving unit is provided to drive the chemical discharge guide up and down, so that when the chemical discharge guide ascends, the first exhaust port is opened and the second exhaust port is closed, and when the chemical discharge guide descends, the first exhaust port is closed. It is characterized in that the second exhaust port is opened;
Characterized in that the opening and closing member is provided fixed to the inner lower end and the outer surface of the chemical discharge guide
Substrate processing device. delete According to claim 5,
The drug solution discharge guide is provided with a plurality of layers;
The substrate processing apparatus according to claim 1 , wherein the opening/closing member is provided in a chemical discharge guide positioned outermost with respect to the substrate among the plurality of layers of the chemical discharge guide. According to claim 7,
the plurality of layers of the liquid medicine discharge guide forms at least one recovery cup;
The substrate processing apparatus, characterized in that the first exhaust port is provided at a lower end of a recovery cup formed outermost with respect to the substrate (W) among the at least one recovery cup. The method of any one of claims 1, 3, 4 and 5,
The substrate processing apparatus, characterized in that the first exhaust outlet, the second exhaust outlet and the opening and closing member are provided in plurality. delete delete delete delete delete a) performing a substrate treatment process and exhausting process gas inside the chemical discharge guide;
b) completing the substrate treatment process and exhausting process gas outside the chemical discharge guide;
The substrate processing apparatus in which the substrate processing process is performed includes a chamber in which the substrate processing is performed, a chemical discharge guide for inducing discharge of the chemical solution separated from the substrate, a first exhaust port provided inside the chemical discharge guide, and an outer side of the chemical discharge guide. A second exhaust port and an opening and closing member for opening and closing the first exhaust port or the second exhaust port provided therein are provided;
the first exhaust port and the second exhaust port are provided side by side at a lower end of the chamber with the chemical solution discharge guide interposed therebetween;
the opening/closing member is provided below the chemical discharge guide to open and close the first exhaust port or the second exhaust port;
Step a) is a step in which the opening/closing member is driven to open the first exhaust port and close the second exhaust port;
The step b) is a step in which the opening and closing member is driven to close the first exhaust port and open the second exhaust port;
Substrate processing method. delete delete According to claim 15,
The substrate processing method of claim 1 , wherein the opening/closing member slides inside or outside of the liquid chemical discharge guide to open and close the first exhaust port or the second exhaust port. According to claim 15,
The opening and closing member is provided to be rotatable;
An opening is provided on the opening and closing member;
When the substrate processing progresses, the opening/closing member is rotated so that the opening is located above the first exhaust port, and the first exhaust port is opened;
When the substrate processing is finished, the opening/closing member is rotated so that the opening is located above the second exhaust port, and the second exhaust port is opened;
A substrate processing method, characterized in that. a) performing a substrate treatment process and exhausting process gas inside the chemical discharge guide;
b) exhausting process gas outside the chemical liquid discharge guide after the substrate treatment process is completed;
The substrate processing apparatus in which the substrate processing process is performed includes a chamber in which the substrate processing is performed, a chemical discharge guide for inducing discharge of the chemical solution separated from the substrate, a first exhaust port provided inside the chemical discharge guide, and an outer side of the chemical discharge guide. An opening and closing member for opening and closing the second exhaust port and the first exhaust port or the second exhaust port is provided; The first exhaust port is provided at a lower end of the chamber;
The second exhaust port is provided on an inner wall of one side of the chamber;
the opening/closing member is fixed to the liquid medicine discharge guide;
A driving unit is provided to drive the chemical discharge guide up and down, so that when the chemical discharge guide ascends, the first exhaust port is opened and the second exhaust port is closed, and when the chemical discharge guide descends, the first exhaust port is closed. It is characterized in that the second exhaust port is opened;
The substrate processing method, characterized in that the opening and closing member is provided fixed to the inner lower end and the outer surface of the chemical discharge guide. delete

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