CN108300368A - 抗电浆胶带以及半导体封装的制程方法 - Google Patents

抗电浆胶带以及半导体封装的制程方法 Download PDF

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CN108300368A
CN108300368A CN201710089287.3A CN201710089287A CN108300368A CN 108300368 A CN108300368 A CN 108300368A CN 201710089287 A CN201710089287 A CN 201710089287A CN 108300368 A CN108300368 A CN 108300368A
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plasma
adhesive tape
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lead frame
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CN108300368B (zh
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郭至祥
黄智文
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WIN Semiconductors Corp
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Abstract

本发明公开了一种抗电浆胶带以及半导体封装的制程方法，抗电浆胶带包含有一基材以及形成于该基材上的一黏着层，其中该黏着层选自由丙烯酸黏合剂、光固化树脂与光起始剂所构成的群组的其中之一。于一电浆清洗制程前，该抗电浆胶带黏贴于该半导体封装的一导线架的一背面，于一模封制程后，该抗电浆胶带自该导线架移除。于该抗电浆胶带通过照射一能量射线而固化及自导线架移除后，于该半导体封装的一模封塑料上不会遗留残胶，该模封塑料于该模封制程中所形成。

Description

抗电浆胶带以及半导体封装的制程方法
技术领域
本发明涉及一种抗电浆胶带以及一种半导体封装的制程方法，尤其涉及一种可避免在半导体封装的模封塑料上遗留残胶的抗电浆胶带以及使用该种抗电浆胶带的半导体封装的制程方法。
背景技术
一般而言，包含导线架(Leadframe)的四方扁平无引脚封装(Quad Flat No LeadPackage，QFN)是由一半导体制程方法所制造，而公知的制造QFN的方法大致如下：于一黏贴胶带的制作过程中，将一胶带黏贴于导线架的一背面；于一电浆清洗过程中，用电浆气体清洗导线架；于黏晶(Die Bonding)过程及焊线(Wire Bonding)过程中，将芯片黏着于导线架的一正面，以及将复数个引脚(Lead)利用焊线与芯片(Die)进行电性连接；于一模封过程中，将导线架与安装于导线架上的半导体组件密封于模封塑料(如环氧树脂)中，最后，于一撕除胶带过程中，将胶带自导线架移除/撕除。
然而，在电浆清洗的过程中，传统胶带会与电浆气体产生反应(其可为物理性或化学性反应)，也就是说，电浆气体可能会侵蚀胶带，使得胶带的材料特性会因电浆气体而有所改变，然而，当胶带与模封塑料之间的黏性增强时，会导致撕除胶带后在模封塑料上遗留残胶。
详细而言，请参考图10，图10所示为一半导体封装12进行撕除胶带的剖面示意图。半导体封装12包含有一导线架LF’、一芯片DE’、焊线WR’以及一模封塑料MC’，其中导线架LF’包含有一芯片垫PD’与引脚LD’。如图10所示，当一传统胶带AHV于撕除胶带的过程中自该导线架上被移除/撕除时，模封塑料MC’上会遗留残胶RA。而残胶会对后续半导体封装的过程(如半导体封装的测试)带来麻烦，例如，需增加额外的清洗过程(如水刀清洗或药液清洁)以清洗所述残胶，进而导致半导体封装的制造成本增加。
因此，如何避免模封塑料上遗留残胶而又不产生额外成本，就成了业界所努力的目标之一。
发明内容
因此，本发明的目的在于提供一种抗电浆胶带以及半导体封装的制程方法，其可不在半导体封装的模封塑料上遗留残胶，以改进先前技术的缺点。
本发明为达上述目的所提供的技术方案如下：
一种抗电浆胶带，应用于制造一半导体封装的一制程，其中于一电浆清洗制程前，所述抗电浆胶带黏贴于所述半导体封装的一导线架的一背面，于一模封制程后，所述抗电浆胶带自所述导线架移除；所述抗电浆胶带包含：
一基材；以及
一黏着层，形成于所述基材上，其中所述黏着层选自由丙烯酸黏合剂、光固化树脂与光起始剂所构成的群组的其中之一；
其中，于所述电浆清洗制程前，所述抗电浆胶带通过照射一能量射线而固化；
其中，当所述抗电浆胶带从所述导线架移除后，所述半导体封装的一模封塑料上不会遗留残胶，所述模封塑料于所述模封制程中所形成。
本发明提出的上述抗电浆胶带，可用于制作半导体封装的过程中，在进行电浆清洗前，将该抗电浆胶带黏贴于所述半导体封装的导线架的背面并采用能量射线照射而使其固化(以防止电浆气体侵蚀黏着层)，因此最后所述抗电浆胶带自所述导线架移除后，所述半导体封装的一模封塑料上不会遗留残胶。
一种半导体封装的制程方法，包括以下步骤：
将一抗电浆胶带黏贴于一导线架的第一面，其中所述抗电浆胶带包含一黏着层；将一芯片黏着于所述导线架的第二面；
将所述抗电浆胶带固化；
于所述抗电浆胶带固化后，以一电浆气体清洗所述芯片与所述导线架；
对所述芯片及所述导线架进行一模封制程；以及
于一模封塑料将所述导线架模封后，撕除所述抗电浆胶带。
附图说明
图1是本发明实施例提供的抗电浆胶带的示意图；
图2至图9是本发明实施例提供的半导体封装的制程；
图10是对一半导体封装进行一撕除胶带制程的剖面示意图。
附图标记说明：
10 抗电浆胶带
100 离形膜
102、102’ 黏着层
104 基材
LF、LF’ 导线架
LD、LD’ 引脚
PD、PD’ 芯片垫
GP 间隙
DE、DE’ 芯片
AT 分子或原子
WR、WR’ 銲线
MC、MC’ 模封塑料
RA 残胶
AHV 传统胶带
具体实施方式
下面结合附图和具体的实施方式对本发明作进一步说明。
请参考图1，为本发明实施例提供的一抗电浆胶带10的示意图。抗电浆胶带10用来制造包含有一导线架(Leadframe)的一半导体封装，例如用来制造一四方扁平无引脚封装(Quad Flat No-lead Package，QFN)。抗电浆胶带10可于半导体封装的一模封制程(Molding Process)前黏贴于半导体封装的所述导线架的一背面，并于所述模封制程后，可自所述导线架撕除，以避免一模封塑料(Molding Compound)溢漏至所述导线架的所述背面。需注意的是，于模封制程前，所述半导体封装须利用一电浆气体来清洗(即所述半导体封装经过一电浆清洗制程)，而抗电浆胶带10可使所述半导体封装的模封塑料上不遗留残胶，以提升半导体封装的制程质量。
具体来说，抗电浆胶带10包含有一离形膜100、一黏着层102以及一基材104，离形膜100位于黏着层102上，离形膜100可于抗电浆胶带10黏贴于所述导线架前自抗电浆胶带10移除/撕除。黏着层102形成于基材104之上，其可由一光固化材料制成，该光固化材料可选自由丙烯酸(压克力)黏合剂(Acrylic Adhesive)、光固化树脂(Light-Curable Resin)与光起始剂(Photoinitiator)所构成的群组的其中之一，其中该光固化树脂可为紫外线(UV)固化树脂，而黏着层102的各成份的重量百分比例如下：丙烯酸(压克力)黏合剂50-95％、光固化树脂1-30％及光起始剂1-30％。于电浆清洗制程前，黏着层102可通过照射一能量射线而固化，其中该能量射线可为紫外线(Ultraviolet，UV)，或波长为200～450纳米(nm)的能量射线。因经光照而固化后的黏着层不易与所述电浆气体起反应，使得黏着层102与模封塑料之间的黏性不足以留下残胶，因此，于黏着层102自所述导线架移除/撕除后，所述半导体封装上的模封塑料上不会留下残胶。另外，基材104可为一薄膜，其可选自由聚酯(PET)、聚酰亚胺(Polyimide)、聚酰胺(Polyamide)及聚萘二甲酸乙二酯(PEN)所构成的群组的其中之一。
详细来说，请参考图2至图9，图2至图9绘示了制备一半导体封装的制程。图2为半导体封装经过一黏贴胶带制程(Taping Process)后的示意图，于抗电浆胶带10黏贴至一导线架LF前，离形膜100已自抗电浆胶带10移除/撕除，另外，导线架LF包含有一芯片垫PD以及引脚LD，(除了离形膜100之外)黏着层102及基材104已黏着于导线架LF的一背面(即黏着于该引脚LD及该芯片垫PD的一背面)，为了方便说明，于后续说明书中将引脚LD及芯片垫PD之间的间隙标记为间隙GP。图3为半导体封装经过一黏晶制程(Die Bonding Process)后的示意图，如图3所示，半导体封装的一芯片DE黏着于导线架LF中芯片垫PD的一正面上。
图4为半导体封装经过一固化制程(Curing Process)后的示意图。于固化制程中，位于间隙GP内(即在引脚LD以及芯片垫PD之间)的部分黏着层102因受到紫外线UV照射而固化，而固化后的黏着层102’即形成于间隙GP内(即在引脚LD以及芯片垫PD之间)。图5为半导体封装经过一电浆清洗制程(Plasma-Cleaning Process)的示意图，于电浆清洗制程中，芯片DE及导线架LF上的灰尘与粒子可利用该电浆气体内的分子或原子AT将之清洗干净，其中AT代表电浆气体中的分子或原子，而该电浆气体可为氧气(Oxygen，O2)、氩气(Argon，Ar)及氢气(Hydrogen，H2)其中之一或其混合物。需注意的是，于电浆清洗制程中，仅(固化后的)黏着层102’与该电浆气体相接触，也就是说，除了固化后的黏着层102’之外，其余的黏着层102皆不与该电浆气体接触，其中，固化后的黏着层102’不易与该电浆气体起反应。
图6为半导体封装经过一焊线制程(Wire Bonding Process)后的示意图，于该焊线制程中，将焊线WR焊/接合于芯片DE与引脚LD之间，以连接芯片DE与引脚LD之间的讯号。图7为半导体封装再次经过电浆清洗制程的示意图。同样地，该电浆气体内的分子或原子AT可将芯片DE、导线架LF与焊线WR上的灰尘或是粒子冲洗/清洗干净，而固化后的黏着层102’仍难以与该电浆气体起反应。
图8为半导体封装经过一模封制程后的示意图，于模封制程中，模封塑料MC可将芯片DE、焊线WR与导线架LF密封，其中模封塑料MC可为环氧树脂(Epoxy Resin)，另外，(移除该离形膜100后的)抗电浆胶带10可阻隔/阻挡模封塑料MC使其不致溢漏至导线架LF的背面。图9为半导体封装经过一撕除胶带制程(De-Taping Process)的示意图，于撕除胶带制程中，将抗电浆胶带10的黏着层102及基材104自半导体封装撕除。
需注意的是，由于固化后的黏着层102’不易与电浆气体进行反应，而固化后的黏着层102’与模封塑料MC之间的黏性显著地降低(以致不足以留下残胶)，因此，于抗电浆胶带10撕除后，于半导体封装的模封塑料MC上将不会遗留残胶。除此之外，抗电浆胶带10想针对需要电浆清洗制程的半导体制程所设计，若无电浆清洗制程，就不会产生残胶。相较于(需要采用电浆清洗制程的)现有技术，因本发明半导体封装的模封塑料上不会留下残胶，即不需要利用水刀清洗或药剂清洗等制程来清除残胶，进而可降低半导体封装的制造成本。
需注意的是，前述实施例是用以说明本发明的概念，本领域普通技术人员可进行相应的变通，而不限于此。举例来说，固化制程不限于在黏晶制程之后进行，固化制程亦可于黏晶制程之前进行，只要在电浆清洗制程前，将位于间隙GP内(即于引脚LD与芯片垫PD之间)的黏着层102固化，即满足本发明要求且属于本发明的保护范围。
由上述可知，本发明利用光固化材料(如丙烯酸(压克力)黏合剂及/或光固化树脂)形成抗电浆胶带的黏着层，以防止电浆气体侵蚀黏着层。如此一来，于抗电浆胶带移除时，半导体封装上的模封塑料上不会留下残胶，而无需再利用水刀清洗或药剂清洗，因此可降低半导体封装的制造成本。
以上内容是结合具体的优选实施方式对本发明所作的进一步详细说明，不能认定本发明的具体实施只局限于这些说明。对于本发明所属技术领域的技术人员来说，在不脱离本发明构思的前提下，还可以做出若干等同替代或明显变型，而且性能或用途相同，都应当视为属于本发明的保护范围。

Claims (17)

1.一种抗电浆胶带，应用于制造一半导体封装的一制程，其中于一电浆清洗制程前，所述抗电浆胶带黏贴于所述半导体封装的一导线架的一背面，于一模封制程后，所述抗电浆胶带自所述导线架移除；所述抗电浆胶带包含：
一基材；以及
一黏着层，形成于所述基材上，其中所述黏着层选自由丙烯酸黏合剂、光固化树脂与光起始剂所构成的群组的其中之一；
其中，于所述电浆清洗制程前，所述抗电浆胶带通过照射一能量射线而固化；
其中，当所述抗电浆胶带从所述导线架移除后，所述半导体封装的一模封塑料上不会遗留残胶，所述模封塑料于所述模封制程中所形成。
2.如权利要求1所述的抗电浆胶带，其特征在于：所述基材为一薄膜，所述薄膜选自由聚酯、聚酰亚胺、聚酰胺及聚萘二甲酸乙二酯所构成的群组的其中之一。
3.如权利要求1所述的抗电浆胶带，其特征在于：所述电浆清洗制程中所使用的气体选自由氧气、氩气及氢气所构成的群组的其中之一。
4.如权利要求1所述的抗电浆胶带，其特征在于：所述抗电浆胶带另包含一离形膜，形成于所述黏着层之上。
5.如权利要求1所述的抗电浆胶带，其特征在于：所述光固化树脂为紫外线固化树脂。
6.如权利要求1所述的抗电浆胶带，其特征在于：所述黏着层的各成份的重量百分比例为：丙烯酸黏合剂50-95％，光固化树脂1-30％，光起始剂1-30％。
7.如权利要求1所述的抗电浆胶带，其特征在于：所述能量射线为紫外线。
8.如权利要求1所述的抗电浆胶带，其特征在于：所述能量射线的波长为200～450纳米。
9.一种半导体封装的制程方法，包括以下步骤：
将一抗电浆胶带黏贴于一导线架的第一面，其中所述抗电浆胶带包含一黏着层；
将一芯片黏着于所述导线架的第二面；
将所述抗电浆胶带固化；
于所述抗电浆胶带固化后，以一电浆气体清洗所述芯片与所述导线架；
对所述芯片及所述导线架进行一模封制程；以及
于一模封塑料将所述导线架模封后，撕除所述抗电浆胶带。
10.如权利要求9所述的制程方法，其特征在于：所述黏着层包含一光固化材料。
11.如权利要求10所述的制程方法，其特征在于：所述光固化材料选自由丙烯酸黏合剂、光固化树脂及光起始剂所构成的群组的其中之一。
12.如权利要求11所述的制程方法，其特征在于：所述光固化树脂为一紫外线固化树脂。
13.如权利要求11所述的制程方法，其特征在于：所述黏着层包括按重量百分比例计算的丙烯酸黏合剂50-95％、光固化树脂1-30％及光起始剂1-30％。
14.如权利要求9所述的制程方法，其特征在于：将所述抗电浆胶带固化的步骤具体是：采用一能量射线照射所述抗电浆胶带，以固化所述抗电浆胶带。
15.如权利要求14所述的制程方法，其特征在于：所述能量射线为紫外线。
16.如权利要求14所述的制程方法，其特征在于：所述能量射线的波长为200～450纳米。
17.如权利要求9所述的制程方法，其特征在于：所述电浆气体选自由氧气、氩气及氢气所构成的群组的其中之一。
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