CN108233974A - 收发模块 - Google Patents

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CN108233974A
CN108233974A CN201711084108.3A CN201711084108A CN108233974A CN 108233974 A CN108233974 A CN 108233974A CN 201711084108 A CN201711084108 A CN 201711084108A CN 108233974 A CN108233974 A CN 108233974A
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CN108233974B (zh
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松井秀纪
竹松佑二
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Murata Manufacturing Co Ltd
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Abstract

本发明降低收发模块的噪声的影响。收发模块(10)包括：(i)具有面(20A)及作为其背面的面(20B)的布线基板(20)；(ii)具有信号端子(31)及接地端子(32)、信号端子(31)被表面连接安装在面(20A)上的低噪声放大器(30)；(iii)具有信号端子(41)及接地端子(42)、信号端子(41)及接地端子(42)被表面连接安装在面(20A)上的功率放大器(40)；(iv)覆盖低噪声放大器(30)及功率放大器(40)的绝缘性树脂(50)；以及(v)覆盖绝缘性树脂(50)的表面的导电性护罩(60)。接地端子(32)与导电性护罩(60)相连接。

Description

收发模块
技术领域
本发明涉及收发模块。
背景技术
已知有将微波、毫米波等高频区域中使用的高频用半导体元件与大规模集成电路等半导体元件安装于同一布线基板而成的高频模块。作为这种高频模块，例如在日本专利特开2005-136272号公报中提出了具有以下构造的高频模块，即：用导电性覆盖层覆盖安装半导体元件的布线基板，并连接半导体元件与导电性覆盖层。该构造中，使接地共用化而不针对每个半导体元件分离接地，从而谋求接地的强化。
现有技术文献
专利文献
专利文献1：日本专利特开2005-136272号公报
发明内容
发明所要解决的技术问题
然而，移动通信终端中，随着搭载元器件的高集成化，搭载以下高频模块的情况越来越多，该高频模块由将对发送信号进行放大的功率放大器、以及对接收信号进行低噪声放大的低噪声放大器表面安装于同一布线基板而成。这种高频模块中，若使功率放大器的接地与低噪声放大器的接地共用化，则噪声会通过共用化后的接地而绕回，从而有时反而特性会变差。尤其在将功率放大器与低噪声放大器接近安装于同一布线基板的情况下，噪声的影响会成为问题。
因此，本发明的课题在于解决上述问题点，并提出一种能降低噪声的影响的收发模块。
解决技术问题所采用的技术方案
为了解决上述问题，本发明所涉及的收发模块包括：(i)布线基板，该布线基板具有第1面及作为其背面的第2面；(ii)低噪声放大器，该低噪声放大器具有第1信号端子及第1接地端子，第1信号端子被表面连接安装在第1面上；(iii)功率放大器，该功率放大器具有第2信号端子及第2接地端子，第2信号端子及第2接地端子被表面连接安装在第1面上；(iv)绝缘性树脂，该绝缘性树脂覆盖低噪声放大器及功率放大器；以及(v)导电性护罩，该导电性护罩覆盖绝缘性树脂的表面，第1接地端子与导电性护罩相连接。
发明效果
根据本发明所涉及的收发模块，能降低噪声的影响。
附图说明
图1是示出本发明实施方式1所涉及的收发模块的简要结构的剖视图。
图2是示出本发明实施方式2所涉及的收发模块的简要结构的剖视图。
图3是本发明实施方式2所涉及的收发模块的俯视图。
图4是示出本发明实施方式3所涉及的收发模块的简要结构的剖视图。
具体实施方式
以下，参照各附图对本发明的实施方式进行说明。此处，以相同标号示出相同的元件或构件，并省略重复说明。
图1是示出本发明实施方式1所涉及的收发模块10的简要结构的剖视图。收发模块10是在移动电话等移动通信终端中用于进行在与基站之间收发多个频带的RF(RadioFrequency：射频)信号的处理的模块，也被称为高频模块。收发模块10包括布线基板20、低噪声放大器30、功率放大器40、绝缘性树脂50以及导电性护罩60。
布线基板20是也被称为安装基板的基板，在布线基板20的两个主面上分别形成有信号端子21及接地端子22。将布线基板20的两个主面中的一个主面称为第1面20A，并将另一个主面称为第2面20B。第2面20B是第1面20A的背面。布线基板20的内部形成有接地层24及通孔25，形成在第1面20A上的接地端子22与形成在第2面20B上的接地端子22通过接地层24及通孔25相连接。
低噪声放大器30是设计成对从天线接收到的作为接收信号的RF信号进行低噪声放大并将其提供给RFIC(Radio Frequency Integrated Circuit：射频集成电路)的单一的IC(Integrated Circuit：集成电路)芯片等分立式元器件。低噪声放大器30具有供RF信号流过的信号端子31以及接地端子32。低噪声放大器30的信号端子31将凸点70夹在中间来与第1面20A的信号端子21进行表面连接安装。
功率放大器40是对从RFIC输出的RF信号进行功率放大并将其作为发送信号提供给天线的单一的IC芯片等分立式元器件。功率放大器40具有供RF信号流过的信号端子41以及接地端子42。功率放大器40的信号端子41将凸点70夹在中间来与第1面20A的信号端子21进行表面连接安装。同样地，功率放大器40的接地端子42将凸点70夹在中间来与第1面20A的接地端子22进行表面连接安装。
低噪声放大器30与布线基板20的第1面20A之间的表面连接安装例如优选是利用倒装芯片连接来进行的安装。同样地，功率放大器40与布线基板20的第1面20A之间的表面连接安装例如也优选是利用倒装芯片连接来进行的安装。
绝缘性树脂50形成为覆盖低噪声放大器30及功率放大器40。利用绝缘性树脂50来进行的低噪声放大器30及功率放大器40的覆盖也被称为树脂密封，绝缘性树脂50起到作为密封构件的功能。绝缘性树脂50的材质例如为环氧树脂。导电性护罩60形成为覆盖绝缘性树脂50的表面。导电性护罩60的材质例如为金、银、铜、铝、铁、镍、不锈钢等金属。
低噪声放大器30的接地端子32与导电性护罩60相连接。接地端子32例如是突起状的金属端子。这样的突起状的金属端子例如也可以是通过引线接合切割为规定长度后的引线。
导电性护罩60在布线基板20的侧面与接地层24相连接，低噪声放大器30的接地端子32通过导电性护罩60与接地层24相连接。另一方面，功率放大器40的接地端子42通过与布线基板20的第1面20A的接地端子22之间的表面连接安装而与接地层24相连接。形成在布线基板20的第2面20B上的接地端子22与母板基板的接地端子相连接。
根据实施方式1，与将低噪声放大器30的接地端子32表面连接安装于布线基板20的第1面20A的情况相比，能延长低噪声放大器30的接地端子32与功率放大器40的接地端子42之间的距离。由此，能降低因经由接地的噪声的绕回而引起的低噪声放大器30及功率放大器40的特性劣化。此外，低噪声放大器30的接地端子32无需连接安装于布线基板20的第1面20A，因此形成在布线基板20的第1面20A上的各端子的设计的自由度得以提高。特别地，由于布线基板20的凸点密度减小，因此能充分确保端子间的隔离性，对于小型化也有用。此外，由于功率放大器40与低噪声放大器30相比发热量更多，因此为了得到合适的散热效果，与将接地端子42连接至导电性护罩60相比，更优选为通过布线基板20将接地端子42连接至母板的接地端子。
然而，本发明并不限于上述示例，例如也可以将低噪声放大器30的接地端子32表面连接安装于布线基板20，而将功率放大器40的接地端子42连接至导电性护罩60。此外，除了低噪声放大器30及功率放大器40以外，收发模块10也可以具备例如天线开关、双工器或匹配电路等。
另外，在需要对低噪声放大器30的接地端子32与功率放大器40的接地端子42进行区别的情况下，将前者称为第1接地端子，并将后者称为第2接地端子。同样地，在需要对低噪声放大器30的信号端子31与功率放大器40的信号端子41进行区别的情况下，将前者称为第1信号端子，并将后者称为第2信号端子。
图2是示出本发明实施方式2所涉及的收发模块80的简要结构的剖视图。实施方式2所涉及的收发模块80与实施方式1所涉及的收发模块10的不同点在于，其导电性护罩60不与接地层24连接，而与形成在第2面20B上的接地端子23相连接。
如图3所示，布线基板20的第2面20B上形成有信号端子21及接地端子22、23。此处，虽然接地端子22、23互相分离，但两者都与母板基板的接地端子相连接。如图2所示，形成在第2面20B上的接地端子22通过接地层24及通孔25与功率放大器40的接地端子42相连接。此外，形成在第2面20B上的接地端子23通过通孔27、接地层26以及导电性护罩60与低噪声放大器30的接地端子32相连接。此处，接地层24、26在布线基板20内互相分离。由此，低噪声放大器30的接地端子32通过导电性护罩60与第2面20B的接地端子23相连接。此外，功率放大器40的接地端子42通过与布线基板20的第1面20A之间的表面连接安装而连接至第2面20B的接地端子22。
根据实施方式2，能够使收发模块80内的低噪声放大器30的接地与功率放大器40的接地完全分离。由此，能进一步降低因经由接地的噪声的绕回而引起的低噪声放大器30及功率放大器40的特性劣化。
另外，在需要对接地端子22、23进行区别的情况下，将接地端子23称为第3接地端子，并将接地端子22称为第4接地端子。
图4是示出本发明实施方式3所涉及的收发模块90的简要结构的剖视图。实施方式3所涉及的收发模块90与实施方式1所涉及的收发模块10的不同点在于，其低噪声放大器30在具备与导电性护罩60进行连接的接地端子32的基础上，还具备与布线基板20进行表面连接安装的接地端子33。低噪声放大器30的接地端子33将凸点70夹在中间来与布线基板20的第1面20A的接地端子22进行表面连接安装。
实施方式1中，在用绝缘性树脂50对低噪声放大器30及功率放大器40进行树脂密封之前无法形成接地端子32，因此无法评价低噪声放大器30的电气特性。与此相对，根据实施方式3，由于低噪声放大器30的接地端子33表面连接安装在布线基板20上，因此能在形成接地端子32前对低噪声放大器30的电气特性进行评价。
另外，上述所说明的各实施方式是为了便于理解本发明，但并非对本发明进行限定解释。本发明在不脱离主旨的前提下，可进行变更/改良，并且其等效内容也包含在本发明中。即，本领域技术人员可对各实施方式施加适当的设计变更，只要具备本发明的特征，就包含在本发明的范围内。例如，各实施方式所具备的各要素及其配置、材料、条件、形状、尺寸等并不限于例示的内容，能进行适当变更。另外，各实施方式所具备的各要素能够在技术允许的范围内进行组合，它们的组合只要具备本发明的特征，就包含在本发明的范围内。
标号说明
10 收发模块
20 布线基板
21 信号端子
22、23 接地端子
24 接地层
30 低噪声放大器
31 信号端子
32、33 接地端子
40 功率放大器
41 信号端子
42 接地端子
50 绝缘性树脂
60 导电性护罩
70 凸点
80 收发模块
90 收发模块

Claims (3)

1.一种收发模块，其特征在于，包括：
布线基板，该布线基板具有第1面及作为其背面的第2面；
低噪声放大器，该低噪声放大器具有第1信号端子及第1接地端子，所述第1信号端子被表面连接安装在所述第1面上；
功率放大器，该功率放大器具有第2信号端子及第2接地端子，所述第2信号端子及所述第2接地端子被表面连接安装在所述第1面上；
绝缘性树脂，该绝缘性树脂覆盖所述低噪声放大器及所述功率放大器；以及
导电性护罩，该导电性护罩覆盖所述绝缘性树脂的表面，
所述第1接地端子与所述导电性护罩相连接。
2.如权利要求1所述的收发模块，其特征在于，
所述布线基板具有接地层，
所述第1接地端子通过所述导电性护罩而与所述接地层相连接，
所述第2接地端子通过与所述第1面之间的表面连接安装而连接至所述接地层。
3.如权利要求1所述的收发模块，其特征在于，
所述第2面具有互相分离的第3接地端子及第4接地端子，
所述第1接地端子通过所述导电性护罩而与所述第3接地端子相连接，
所述第2接地端子通过与所述第1面之间的表面连接安装而连接至所述第4接地端子。
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110868233A (zh) * 2018-08-09 2020-03-06 株式会社村田制作所 高频模块以及通信装置
CN111567153A (zh) * 2019-07-18 2020-08-21 深圳市大疆创新科技有限公司 电子设备及其制造方法、无人机、遥控器和移动终端
CN112970201A (zh) * 2018-11-02 2021-06-15 株式会社村田制作所 高频模块、发送功率放大器以及通信装置
CN114342268A (zh) * 2019-08-28 2022-04-12 株式会社村田制作所 高频模块和通信装置

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018098677A (ja) * 2016-12-14 2018-06-21 株式会社村田製作所 送受信モジュール
WO2018168391A1 (ja) * 2017-03-13 2018-09-20 三菱電機株式会社 マイクロ波デバイス及び空中線
CN214069915U (zh) 2018-06-20 2021-08-27 株式会社村田制作所 高频模块和通信装置
WO2020162614A1 (ja) * 2019-02-08 2020-08-13 株式会社村田製作所 モジュール
WO2021033418A1 (ja) * 2019-08-20 2021-02-25 株式会社村田製作所 高周波モジュール
US11662223B2 (en) * 2019-10-24 2023-05-30 Osram Opto Semiconductors Gmbh Optoelectronic device including a shielding cap and methods for operating and fabricating an optoelectronic device
JP2021106336A (ja) * 2019-12-26 2021-07-26 株式会社村田製作所 高周波モジュール及び通信装置
JP2021125784A (ja) * 2020-02-05 2021-08-30 株式会社村田製作所 高周波モジュールおよび通信装置
JP2021136514A (ja) * 2020-02-25 2021-09-13 株式会社村田製作所 高周波モジュール及び通信装置
CN218513447U (zh) * 2020-03-06 2023-02-21 株式会社村田制作所 模块
WO2022118891A1 (ja) * 2020-12-04 2022-06-09 株式会社村田製作所 高周波モジュール及び通信装置
WO2022138441A1 (ja) * 2020-12-23 2022-06-30 株式会社村田製作所 高周波モジュール及び通信装置
WO2022230683A1 (ja) * 2021-04-26 2022-11-03 株式会社村田製作所 高周波モジュール及び通信装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1770649A (zh) * 2004-10-19 2006-05-10 阿尔卑斯电气株式会社 便携式电话机用高频模块
CN1881810A (zh) * 2005-06-06 2006-12-20 株式会社瑞萨科技 多模式高频电路
CN101401206A (zh) * 2006-03-29 2009-04-01 京瓷株式会社 电路组件和无线通信设备、以及电路组件的制造方法
CN207399201U (zh) * 2016-12-14 2018-05-22 株式会社村田制作所 收发模块

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2365007B (en) * 2000-07-21 2002-06-26 Murata Manufacturing Co Insulative ceramic compact
JP2005026373A (ja) 2003-06-30 2005-01-27 Tdk Corp 放熱構造を備えた電子部品
JP2005136272A (ja) 2003-10-31 2005-05-26 Hitachi Cable Ltd 高周波部品搭載用半導体装置
WO2009002381A2 (en) * 2007-06-22 2008-12-31 Skyworks Solutions, Inc. Mold compound circuit structure for enhanced electrical and thermal performance
JP5324191B2 (ja) * 2008-11-07 2013-10-23 ルネサスエレクトロニクス株式会社 半導体装置
JP2011198866A (ja) * 2010-03-18 2011-10-06 Renesas Electronics Corp 半導体装置およびその製造方法
JP2012151353A (ja) * 2011-01-20 2012-08-09 Sharp Corp 半導体モジュール
US20120228751A1 (en) * 2011-03-07 2012-09-13 Samsung Electronics Co., Ltd. Semiconductor package and method of manufacturing the same
US9907179B2 (en) * 2016-04-25 2018-02-27 Tdk Corporation Electronic circuit package

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1770649A (zh) * 2004-10-19 2006-05-10 阿尔卑斯电气株式会社 便携式电话机用高频模块
CN1881810A (zh) * 2005-06-06 2006-12-20 株式会社瑞萨科技 多模式高频电路
CN101401206A (zh) * 2006-03-29 2009-04-01 京瓷株式会社 电路组件和无线通信设备、以及电路组件的制造方法
CN207399201U (zh) * 2016-12-14 2018-05-22 株式会社村田制作所 收发模块

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110868233A (zh) * 2018-08-09 2020-03-06 株式会社村田制作所 高频模块以及通信装置
CN110868233B (zh) * 2018-08-09 2021-11-30 株式会社村田制作所 高频模块以及通信装置
CN112970201A (zh) * 2018-11-02 2021-06-15 株式会社村田制作所 高频模块、发送功率放大器以及通信装置
CN112970201B (zh) * 2018-11-02 2022-08-23 株式会社村田制作所 高频模块、发送功率放大器以及通信装置
CN111567153A (zh) * 2019-07-18 2020-08-21 深圳市大疆创新科技有限公司 电子设备及其制造方法、无人机、遥控器和移动终端
CN111567153B (zh) * 2019-07-18 2021-12-28 深圳市大疆创新科技有限公司 电子设备及其制造方法、无人机、遥控器和移动终端
CN114342268A (zh) * 2019-08-28 2022-04-12 株式会社村田制作所 高频模块和通信装置
CN114342268B (zh) * 2019-08-28 2023-01-13 株式会社村田制作所 高频模块和通信装置

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