CN108133889A - A kind of method that double-sided copper-clad ceramic substrate two sides is sintered simultaneously - Google Patents
A kind of method that double-sided copper-clad ceramic substrate two sides is sintered simultaneously Download PDFInfo
- Publication number
- CN108133889A CN108133889A CN201711307683.5A CN201711307683A CN108133889A CN 108133889 A CN108133889 A CN 108133889A CN 201711307683 A CN201711307683 A CN 201711307683A CN 108133889 A CN108133889 A CN 108133889A
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- Prior art keywords
- plate
- copper
- double
- alumina ceramic
- aluminium nitride
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
- H01L21/3245—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering of AIIIBV compounds
Abstract
The present invention provides a kind of method that double-sided copper-clad ceramic substrate two sides is sintered simultaneously, the characteristic that will not be combined using the not oxidised processing of aluminium nitride with copper sheet, will nitridation aluminium sheet as sintering backing material, solves the problems, such as to be sintered backing plate and is easily bonded together with copper or leaves that contact trace bad on copper sheet surface；Backing plate appearance and size is sintered by reducing simultaneously, solves the problems, such as former sintering backing plate and the excessive influence sintering process parameter of copper sheet contact area.
Description
Technical field
The invention belongs to field of semiconductor manufacture, are related to a kind of preparation method of double-sided copper-clad ceramic substrate.
Background technology
Sintering process is two sides copper sheet and the once sintered completion of ceramic wafer simultaneously on DBC double-sided copper-clad ceramic substrate two sides：It will
First copper sheet is firstly placed on sintering backing plate, and ceramic wafer is placed on above copper sheet, then the second face copper sheet is placed on ceramic wafer and is carried out
Sintering.Sintering backing plate is often reticulated with the refractory metal materials such as Inconel, nickel-cadmium or with potteries such as Y2O3, MgO, SiC
Strip pad is made in copper sheet in the following, but being sintered backing plate made of these materials there are some in use to ask in ceramic material
Topic：1. being easily bonded together with copper or leaving contact trace on copper sheet surface, the bad increase of product is caused.2. it is contacted with copper sheet
Area is excessive, and sintering process parameter is impacted, so as to influence product quality.
Invention content
In view of the problems of the existing technology, the present invention provides the side that a kind of double-sided copper-clad ceramic substrate two sides is sintered simultaneously
Method, the characteristic that will not be combined using the not oxidised processing of aluminium nitride with copper sheet using nitridation aluminium sheet as sintering backing material, are solved
Sintering backing plate, which is easily bonded together with copper or is left on copper sheet surface, contacts the bad problem of trace；Simultaneously by reducing sintering pad
Plate appearance and size solves the problems, such as former sintering backing plate and the excessive influence sintering process parameter of copper sheet contact area.
The technical scheme is that：A kind of method that double-sided copper-clad ceramic substrate two sides is sintered simultaneously, specific steps are such as
Under：
Step 1: nitridation aluminium sheet is cut into aluminium nitride small circular plate；
Step 2: the second bigger small sircle hole of several sizes is opened on the first alumina ceramic plate forms trepanning aluminium oxide
Ceramic wafer；
Step 3: the second alumina ceramic plate is placed on sintering furnace conveyer belt as liner plate, in the second aluminium oxide ceramics
The trepanning alumina ceramic plate described in step 2 is placed on plate；
Step 4: the aluminium nitride small circular plate described in step 1 is put into the second small sircle hole of trepanning alumina ceramic plate；
Step 5: the trepanning alumina ceramic plate described in step 4 is taken away；
Step 6: first copper sheet is firstly placed on aluminium nitride sequin, ceramic wafer substrate is placed on above copper sheet, then by
Two copper sheets are placed on ceramic wafer substrate, into sintering furnace in be sintered simultaneously.
Further, the diameter of the second small sircle hole is bigger 2-4mm than the diameter of aluminium nitride small circular plate.
Further, a diameter of 5~Φ of the Φ 15mm of aluminium nitride small circular plate described in step 1,0.5~1.0mm of thickness.
Further, in step 2,4~6 is opened on the first alumina ceramic plate and ranked second small sircle hole, often arranges 4~8
Hole, bore dia are 8~Φ of Φ 18mm.
The beneficial effects of the invention are as follows：
1st, the characteristic that will not be combined using the not oxidised processing of aluminium nitride with copper sheet, by the use of nitridation aluminium sheet as backing material,
Solve the problems, such as that sintering backing plate made of other materials is easily bonded together with copper or leaves that contact trace bad on copper sheet surface.
2nd, will nitridation aluminium sheet be cut into small circular plate pad in copper sheet in the following, reduce with copper sheet contact area, so as to reduce backing plate pair
The influence of sintering process parameter.
3rd, the small sircle hole more bigger than aluminium nitride roundlet board size is cut on alumina ceramic plate, facilitates aluminium nitride small circular plate
Placement and positioning, to improve production efficiency.
Description of the drawings
Fig. 1 is the structure diagram of trepanning alumina ceramic plate；
Fig. 2 is the structure diagram that double-sided copper-clad ceramic substrate two sides is sintered simultaneously.
In figure：1 is alumina ceramic plate, and 2 be copper sheet, and 3 be conveyer belt, and 4 be alumina ceramic plate liner plate, and 5 be aluminium nitride
Small circular plate, 6 be trepanning alumina ceramic plate.
Specific embodiment
The present invention is described further below in conjunction with the accompanying drawings.
The purpose of the present invention is by the use of nitridation aluminium sheet as sintering backing plate, realize two-sided copper sheet while burnt with ceramic wafer
Knot solves to leave contact trace on copper sheet surface after the sintering backing plate that other materials makes easily is bonded together or is sintered with copper
The influence of bad problem and reduction sintering backing plate to sintering process parameter.And operation is easy, can improve product yield and production is imitated
Rate.
Making step for the present invention below：
1st, cutting aluminium nitride small circular plate 5, a diameter of 5~Φ of Φ 15mm, 0.5~1.0mm of thickness
2nd, 4~6 rounds are opened on 138 × 190 × 0.50mm alumina ceramic plates 6, often arrange 4~8 holes, bore dia is
8~Φ of Φ 18mm.See Fig. 1.
3rd, 138 × 190 × 0.38mm alumina ceramic plates are placed as liner plate 4 in sintering furnace conveyer belt 3.
4th, the alumina ceramic plate 6 for opening small sircle hole is placed on alumina ceramic plate liner plate 4.
5th, aluminium nitride small circular plate 5 is put into alumina ceramic plate aperture.
6th, the alumina ceramic plate of trepanning is taken away, aluminium nitride small circular plate is made to be placed on determining position.
7th, first copper sheet 2 is firstly placed on aluminium nitride sequin, ceramic wafer is placed on above copper sheet, then by second copper sheet
Be placed on ceramic wafer, into sintering furnace in be sintered simultaneously.See Fig. 2.
It can carry out covering copper ceramic substrate two sides by above step and be sintered simultaneously, and solve sintering backing plate and easily glued with copper
The bad problem of contact trace is left on copper sheet surface and reduce sintering backing plate to sintering process parameter after being combined or being sintered
It influences.And it is easy to operate efficient, suitable for batch production.
The above is only the preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications also should
It is considered as protection scope of the present invention.
Claims (4)
1. a kind of method that double-sided copper-clad ceramic substrate two sides is sintered simultaneously, it is characterised in that：It is as follows：
Step 1: nitridation aluminium sheet is cut into aluminium nitride small circular plate；
Step 2: the second bigger small sircle hole of several sizes is opened on the first alumina ceramic plate forms trepanning aluminium oxide ceramics
Plate；
Step 3: the second alumina ceramic plate is placed on sintering furnace conveyer belt as liner plate, on the second alumina ceramic plate
Place the trepanning alumina ceramic plate described in step 2；
Step 4: the aluminium nitride small circular plate described in step 1 is put into the second small sircle hole of trepanning alumina ceramic plate；
Step 5: the trepanning alumina ceramic plate described in step 4 is taken away；
Step 6: first copper sheet is firstly placed on aluminium nitride sequin, ceramic wafer substrate is placed on above copper sheet, then by second
Copper sheet is placed on ceramic wafer substrate, into sintering furnace in be sintered simultaneously.
2. the method that a kind of double-sided copper-clad ceramic substrate two sides according to claim 1 is sintered simultaneously, it is characterised in that：The
The diameter of two small sircle holes is bigger 2-4mm than the diameter of aluminium nitride small circular plate.
3. the method that a kind of double-sided copper-clad ceramic substrate two sides according to claim 1 is sintered simultaneously, it is characterised in that：Step
Rapid a diameter of 5~Φ of the Φ 15mm of aluminium nitride small circular plate, 0.5~1.0mm of thickness.
4. the method that a kind of double-sided copper-clad ceramic substrate two sides according to claim 1 is sintered simultaneously, it is characterised in that：Step
In rapid two, 4~6 are opened on the first alumina ceramic plate and ranked second small sircle hole, often arrange 4~8 holes, bore dia is 8~Φ of Φ
18mm。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711307683.5A CN108133889A (en) | 2017-12-11 | 2017-12-11 | A kind of method that double-sided copper-clad ceramic substrate two sides is sintered simultaneously |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711307683.5A CN108133889A (en) | 2017-12-11 | 2017-12-11 | A kind of method that double-sided copper-clad ceramic substrate two sides is sintered simultaneously |
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| CN108133889A true CN108133889A (en) | 2018-06-08 |
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| CN201711307683.5A Pending CN108133889A (en) | 2017-12-11 | 2017-12-11 | A kind of method that double-sided copper-clad ceramic substrate two sides is sintered simultaneously |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109020627A (en) * | 2018-08-06 | 2018-12-18 | 珠海汉瓷精密科技有限公司 | A kind of tool fixture suitable for the two-sided continuous metallised of potsherd |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0798781A2 (en) * | 1996-03-27 | 1997-10-01 | Kabushiki Kaisha Toshiba | Silicon nitride circuit board and producing method therefor |
| CN102931321A (en) * | 2012-11-16 | 2013-02-13 | 上海申和热磁电子有限公司 | Manufacturing method for thin-copper DBC substrate |
| CN103149751A (en) * | 2013-02-19 | 2013-06-12 | 北京京东方光电科技有限公司 | Lower part electrode and manufacturing method thereof |
| CN103762181A (en) * | 2014-01-02 | 2014-04-30 | 上海申和热磁电子有限公司 | Method for preparing aluminium nitride copper-coated ceramic substrate |
| CN103887253A (en) * | 2012-12-20 | 2014-06-25 | 浙江大学 | DBC board using dentate copper piece |
| CN106898584A (en) * | 2015-12-18 | 2017-06-27 | 上海申和热磁电子有限公司 | Anti-dislocation apparatus for covering copper ceramic substrate sintering |
| CN106927850A (en) * | 2015-12-29 | 2017-07-07 | 上海申和热磁电子有限公司 | A kind of preparation method of double-sided copper-clad ceramic substrate |
| CN107369625A (en) * | 2017-07-01 | 2017-11-21 | 合肥圣达电子科技实业有限公司 | The manufacture method of DBC substrates and the DBC substrates manufactured using this method |
-
2017
- 2017-12-11 CN CN201711307683.5A patent/CN108133889A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0798781A2 (en) * | 1996-03-27 | 1997-10-01 | Kabushiki Kaisha Toshiba | Silicon nitride circuit board and producing method therefor |
| CN102931321A (en) * | 2012-11-16 | 2013-02-13 | 上海申和热磁电子有限公司 | Manufacturing method for thin-copper DBC substrate |
| CN103887253A (en) * | 2012-12-20 | 2014-06-25 | 浙江大学 | DBC board using dentate copper piece |
| CN103149751A (en) * | 2013-02-19 | 2013-06-12 | 北京京东方光电科技有限公司 | Lower part electrode and manufacturing method thereof |
| CN103762181A (en) * | 2014-01-02 | 2014-04-30 | 上海申和热磁电子有限公司 | Method for preparing aluminium nitride copper-coated ceramic substrate |
| CN106898584A (en) * | 2015-12-18 | 2017-06-27 | 上海申和热磁电子有限公司 | Anti-dislocation apparatus for covering copper ceramic substrate sintering |
| CN106927850A (en) * | 2015-12-29 | 2017-07-07 | 上海申和热磁电子有限公司 | A kind of preparation method of double-sided copper-clad ceramic substrate |
| CN107369625A (en) * | 2017-07-01 | 2017-11-21 | 合肥圣达电子科技实业有限公司 | The manufacture method of DBC substrates and the DBC substrates manufactured using this method |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109020627A (en) * | 2018-08-06 | 2018-12-18 | 珠海汉瓷精密科技有限公司 | A kind of tool fixture suitable for the two-sided continuous metallised of potsherd |
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