CN107369625A - The manufacture method of DBC substrates and the DBC substrates manufactured using this method - Google Patents
The manufacture method of DBC substrates and the DBC substrates manufactured using this method Download PDFInfo
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- CN107369625A CN107369625A CN201710528905.XA CN201710528905A CN107369625A CN 107369625 A CN107369625 A CN 107369625A CN 201710528905 A CN201710528905 A CN 201710528905A CN 107369625 A CN107369625 A CN 107369625A
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- copper sheet
- dbc substrates
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- 239000000758 substrate Substances 0.000 title claims abstract description 54
- 238000000034 method Methods 0.000 title claims abstract description 49
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 31
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 83
- 239000010949 copper Substances 0.000 claims abstract description 83
- 229910052802 copper Inorganic materials 0.000 claims abstract description 83
- 239000000919 ceramic Substances 0.000 claims abstract description 51
- 239000000463 material Substances 0.000 claims abstract description 25
- 238000005245 sintering Methods 0.000 claims abstract description 23
- 239000000243 solution Substances 0.000 claims abstract description 15
- 230000003647 oxidation Effects 0.000 claims abstract description 12
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 12
- 239000012670 alkaline solution Substances 0.000 claims abstract description 10
- 239000002253 acid Substances 0.000 claims abstract description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 238000004140 cleaning Methods 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 230000002000 scavenging effect Effects 0.000 claims description 7
- 239000003921 oil Substances 0.000 claims description 5
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 4
- 229910017083 AlN Inorganic materials 0.000 claims description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 3
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 claims description 3
- 238000002791 soaking Methods 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 241000197194 Bulla Species 0.000 abstract description 4
- 208000002352 blister Diseases 0.000 abstract description 4
- 238000013467 fragmentation Methods 0.000 abstract description 3
- 238000006062 fragmentation reaction Methods 0.000 abstract description 3
- 239000013078 crystal Substances 0.000 abstract description 2
- 238000010257 thawing Methods 0.000 abstract description 2
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 102000002322 Egg Proteins Human genes 0.000 description 2
- 108010000912 Egg Proteins Proteins 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 210000003278 egg shell Anatomy 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical class [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 238000002386 leaching Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Geometry (AREA)
- Ceramic Products (AREA)
Abstract
The invention discloses a kind of manufacture method of DBC substrates, this method includes：（1）By the first copper sheet and the second copper sheet surface clean, surface oxide layer is removed using alkaline solution oil removing, then with acid solution；（2）The ceramic substrate surface is cleaned using alkaline solution；（3）Oxidation processes are carried out to the first copper sheet and the second copper sheet and form oxide layer；（4）First copper sheet, the second copper sheet are bonded with ceramic base material and be placed on after load bearing board the first copper sheet, the second copper sheet and ceramic base material are sintered simultaneously.This manufacture method is applied to the DBC substrate manufactures of special requirement, the particularly combination of thickness≤0.38 millimeter, copper thickness >=0.4 millimeter of ceramic base material, this manufacture method can effectively avoid the problem of ceramic fragmentation in conventional manufacturing process, improve the manufacture rate of DBC substrates, caused by stress being mismatched when reducing two-sided separately sintering the problems such as local bulla, surface thawing, the increase of copper face crystal grain, enhance product performance, while save process costs.
Description
Technical field
The invention belongs to DBC substrate fabrication techniques field, is related to power semiconductor modular, large scale integrated circuit, big work(
The manufacture method for the thick copper eggshell china DBC substrates that rate LED and condensation photovoltaic etc., particularly current density are big, thermal resistance is low.
Background technology
With the further increase of current power device current density, higher want is proposed to the heat-sinking capability of device
Ask, in DBC pdm substrates, ceramic thickness is usually to be no more than 1.0 millimeters, due to the increase of current density, that is, table
The inductance value increase in face, then need to increase thickness ceramic in DBC substrates to achieve the goal, with traditional fabrication process
Ceramic thickness is more than 1.0 millimeters of DBC substrates, is unable to reach cooling requirements, though copper sheet can be increased by reducing ceramic thickness
Thickness achieve the goal, but in routine techniques, during separating and being bonded copper sheet twice with ceramics, due to copper sheet and pottery
Huge stress between porcelain easily produces the problems such as ceramic fragmentation, local bulla, surface thawing.
The content of the invention
The invention provides it is a kind of solve during two-step sintering because copper with ceramics huge stress appearance it is ceramic broken
Split, local bulla, surface are melted, the manufacture method of copper and DBC substrates the problems such as load bearing board adhesion and using party's legal system
The DBC substrates made.
To solve the above problems, a kind of manufacture method of DBC substrates, the DBC substrates are included in first on load bearing board
The second copper sheet on ceramic base material, the ceramic base material on copper sheet, copper sheet, the making of above-mentioned DBC substrates comprise the following steps：
(1) by the first copper sheet and the second copper sheet surface clean, surface is removed using alkaline solution oil removing, then with acid solution
Oxide layer；
(2) ceramic substrate surface is cleaned using alkaline solution；
(3) one side that the first copper sheet by step (1) processing and the second copper sheet contact with ceramic base material is aoxidized
Handle and form oxide layer；
(4) the first copper sheet of step (3) processing will be passed through, the second copper sheet pastes with the ceramic base material by step (2) processing
It is placed on after conjunction after load bearing board while the first copper sheet, the second copper sheet and ceramic base material is sintered.
DBC technical process two-sided in ceramic base material while being bonded copper sheet is completed by above-mentioned steps.
Further, hydroxyl concentration is 0.002mol/L~0.5mol/L in described alkaline solution, clear using spray
Wash, scavenging period is 1min~10min, 30~60 DEG C of solution temperature；
Further, hydrogen ion concentration is 0.002mol/L~0.5mol/L in described acid solution, clear using spray
Wash, scavenging period is 1min~10min, 30~60 DEG C of solution temperature；
Further, the method aoxidized to copper sheet is thermal oxide, and temperature is 300 DEG C~900 DEG C, and oxygen content is in stove
50ppm~1000ppm, copper sheet is fitted on oxidation load bearing board during oxidation, forms the copper sheet for there was only one side oxide layer, solved
The problem of copper sheet that regular oxidation process makes is two-sided oxidized.
Further, the sintering processes are net strip sintering furnace high-temperature process, sintering furnace high-temperature region temperature is 1055 DEG C~
1075 DEG C, high-temperature region soaking time 1min~15min, oxygen content is 0ppm~200ppm in sintering furnace；
Further, the materials'use of the load bearing board is stable, high temperature resistant and with copper and copper oxides wettability difference
Material, such as carborundum or silicon nitride or aluminium nitride ceramics, it is ensured that a face copper and load bearing board for non-oxidation layer in pyroprocess
It is unable to reaction-sintered together, solves the problems, such as that copper sheet adhesion or bonding occurs with load bearing board in bonding process is sintered.It is described
The thickness of load bearing board is 0.5 millimeter~3 millimeters.
DBC substrates, by being formed according to any described DBC manufacture of substrates of claim 1-6；
Thickness≤0.38 millimeter of ceramic base material in the DBC substrates being made with the manufacture method of described DBC substrates,
Thickness >=0.4 millimeter of first copper sheet and the second copper sheet.
Conventional DBC sintering processes are divided into 2 sintering, are first sintered the copper sheet after oxidation and ceramic first face, then
By the DBC substrates of one side in turn, ceramics contact with the oxide layer of copper carries out the second face sintering, because the thermal coefficient of expansion of copper is
16.7 × 10-6m/ DEG C, aluminium oxide ceramics thermal coefficient of expansion is 7.2 × 10-6m/ DEG C, by 1055 DEG C~1075 DEG C high temperature sinterings
After cool down, one side DBC substrate warps are serious, often the second face sinter before need to flatten one side DBC substrates, flattening
The problem of ceramics rupture is likely to occur in journey, while even if there is a situation where to flatten, there is also edge to burn completely
The risk of knot.
And the DBC substrates that the present invention is provided the manufacture method of DBC substrates and produced using this method solve DBC substrates
Sintering in ceramic thickness≤0.38 millimeter, copper thickness >=0.4 millimeter, the copper sheet of ceramic base material both sides is bonded sintering simultaneously to be made
Both sides stress it is almost identical, can effectively solve the problem that ceramic fragmentation that ceramic base material and copper sheet occur because the coefficient of expansion is different etc.
Problem, the DBC strippable substrates intensity prepared using this manufacture method is high, hole ratio is low, resisting temperature good cycle, while this
Kind of manufacture method aoxidizes to copper sheet one side, avoids asking in sintering process copper sheet and load bearing board adhesion after two-sided oxidation
Topic, by the making of once sintered completion DBC substrates, simplifies two-step sintering process conditions, has saved production cost.
Brief description of the drawings
Fig. 1 is that the manufacture method of DBC substrates of the present invention sinters schematic diagram；
In figure：1st, load bearing board；2nd, the first copper sheet；3rd, ceramic base material；4th, the second copper sheet.
Embodiment
The DBC substrates manufactured with reference to accompanying drawing to the manufacture method of DBC substrates of the present invention and using this method are carried out specifically
It is bright.
The manufacture method of described DBC substrates mainly includes the following steps that：(1) copper sheet surface clean, using alkaline solution
Oil removing is carried out to copper sheet, then copper sheet surface oxide layer is removed with acid solution；(2) copper sheet surface oxidation, using thermal oxidation process
Copper sheet is aoxidized, one side oxide layer is formed on copper surface；(3) ceramics surface clean, ceramics are carried out using alkaline solution
Cleaning, remove the pollutants such as surface grease；(4) DBC substrates double-side copper is bonded simultaneously, is distinguished below ceramic substrate and above
Place the copper sheet of oxidized mistake, the one side for having oxide layer is bonded with ceramic substrate, is placed it on load bearing board, and keep its
Slided on load bearing board without relative, complete DBC substrates double-side copper after being handled by net strip sintering furnace high temperature sintering is bonded simultaneously.
DBC board structures as shown in Figure 1, ceramic thickness are 0.38 millimeter, and copper thickness is 0.5 millimeter.
The first step, sodium hydroxide solution oil removing is used copper sheet, hydroxyl concentration is 0.2mol/L, using cleaning showers,
Scavenging period is 3min, 45 DEG C of solution temperature；Surface oxide layer, wherein hydrogen ion solubility are removed using hydrochloric acid to the copper sheet of oil removing
For 0.2mol/L, using cleaning showers, scavenging period 3min, 45 DEG C of solution temperature；
Second step, copper sheet side and the load bearing board of cleaning are brought into close contact, and thermal oxide shape is used to the surface of copper sheet opposite side
Into oxide layer, wherein oxidizing temperature is 800 DEG C, and oxygen content is 150ppm in stove；
3rd step, ceramic base material is cleaned using sodium hydroxide solution, hydroxyl concentration is 0.1mol/L, using spray
Leaching cleaning, scavenging period 3min, 45 DEG C of solution temperature；
4th step, place the oxidized copper sheet of one side respectively below the ceramic base material cleaned and above, there is oxidation
The one side of layer is bonded with ceramic substrate, and is placed it on aluminium nitride ceramics load bearing board, by net strip sintering furnace high-temperature process,
Sintering furnace high-temperature region temperature is 1055 DEG C, high-temperature region soaking time 5min, and oxygen content is 10-50ppm in sintering furnace.
The DBC substrates that ceramic thickness is 0.38 millimeter, copper thickness is 0.5 millimeter are can obtain by above-mentioned steps, no
The DBC substrates of thick copper eggshell china are only obtained to meet the increased situation of power device current density, and it is provided by the invention double
The process that face sinters simultaneously is reduced in conventional bonding separated twice because of the ceramics of copper appearance different from the coefficient of expansion of ceramics
The appearance of situations such as rupture, increase of local bulla, copper face crystal grain, while above-mentioned manufacture method simplifies conventional production technology,
Production cost is saved.
The preferred embodiment to the invention is illustrated above, but the invention be not limited to it is described
Embodiment, those skilled in the art can also make a variety of equivalent changes on the premise of without prejudice to the invention spirit
Type or replacement, these equivalent modifications or replacement are all contained in the application claim limited range.
Claims (8)
1. a kind of manufacture method of DBC substrates, it is characterised in that the DBC substrates are included in the first copper sheet on load bearing board (1)
(2), the ceramic base material on the first copper sheet (3), the second copper sheet (4) on the ceramic base material, the making of above-mentioned DBC substrates include
Following steps：
（1）To the surface clean of the first copper sheet and the second copper sheet, Surface Oxygen is removed using alkaline solution oil removing, then with acid solution
Change layer；
（2）The surface of the ceramic base material is cleaned using alkaline solution；
（3）To by step（1）The one side that the first copper sheet and the second copper sheet of processing contact with ceramic base material carries out oxidation processes
And form oxide layer；
（4）Step will be passed through（3）First copper sheet of processing, the second copper sheet and pass through step（2）After the ceramic base material fitting of processing
It is placed on after load bearing board while the first copper sheet, the second copper sheet and ceramic base material is sintered.
2. the manufacture method of DBC substrates according to claim 1, it is characterised in that step（1）And step（2）Described in
Alkaline solution in hydroxyl concentration be 0.002mol/L ~ 0.5mol/L, using cleaning showers, scavenging period be 1min ~
10min, 30 ~ 60 DEG C of solution temperature.
3. the manufacture method of DBC substrates according to claim 1, it is characterised in that step（1）In described acid solution
Hydrogen ion concentration is 0.002mol/L ~ 0.5mol/L, and using cleaning showers, scavenging period is 1min ~ 10min, solution temperature 30 ~
60℃。
4. the manufacture method of DBC substrates according to claim 1, it is characterised in that step（3）In to the first copper sheet and
The method that two copper sheets are aoxidized is thermal oxide, and temperature is 300 DEG C ~ 900 DEG C, and oxygen content be 50ppm ~ 1000ppm, general during oxidation
Copper sheet is fitted on oxidation load bearing board, forms the copper sheet for there was only one side oxide layer.
5. the manufacture method of DBC substrates according to claim 1, it is characterised in that step（4）Described in sintering processes be
Net strip sintering furnace high-temperature process, sintering furnace high-temperature region temperature are 1055 DEG C ~ 1075 DEG C, high-temperature region soaking time 1min ~ 15min,
Oxygen content is 0ppm ~ 200ppm in sintering furnace.
6. the manufacture method of DBC substrates according to claim 1, it is characterised in that：Step（4）Described in load bearing board material
Expect that for carborundum or silicon nitride or aluminium nitride ceramics, thickness be 0.5 millimeter ~ 3 millimeters.
7.DBC substrates, it is characterised in that：Usage right requires that the manufacture method of any described DBC substrates of 1-6 is made.
8. DBC substrates according to claim 7, it is characterised in that：The thickness of ceramic base material in the DBC substrates≤
0.38 millimeter, thickness >=0.4 millimeter of the first copper sheet and the second copper sheet.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710528905.XA CN107369625A (en) | 2017-07-01 | 2017-07-01 | The manufacture method of DBC substrates and the DBC substrates manufactured using this method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710528905.XA CN107369625A (en) | 2017-07-01 | 2017-07-01 | The manufacture method of DBC substrates and the DBC substrates manufactured using this method |
Publications (1)
| Publication Number | Publication Date |
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| CN107369625A true CN107369625A (en) | 2017-11-21 |
Family
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| CN201710528905.XA Pending CN107369625A (en) | 2017-07-01 | 2017-07-01 | The manufacture method of DBC substrates and the DBC substrates manufactured using this method |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108133889A (en) * | 2017-12-11 | 2018-06-08 | 上海申和热磁电子有限公司 | A kind of method that double-sided copper-clad ceramic substrate two sides is sintered simultaneously |
| CN109585307A (en) * | 2018-11-16 | 2019-04-05 | 中国电子科技集团公司第四十三研究所 | A kind of heat-radiating substrate and preparation method thereof |
| CN113215518A (en) * | 2021-03-17 | 2021-08-06 | 江苏富乐德半导体科技有限公司 | Copper sheet oxidation method |
| CN113278910A (en) * | 2020-02-20 | 2021-08-20 | 江文忠 | Method for manufacturing copper-clad ceramic and composite board thereof |
| CN116589298A (en) * | 2023-05-23 | 2023-08-15 | 福建华清电子材料科技有限公司 | Preparation method of thick copper-clad ceramic substrate for improving warpage |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108133889A (en) * | 2017-12-11 | 2018-06-08 | 上海申和热磁电子有限公司 | A kind of method that double-sided copper-clad ceramic substrate two sides is sintered simultaneously |
| CN109585307A (en) * | 2018-11-16 | 2019-04-05 | 中国电子科技集团公司第四十三研究所 | A kind of heat-radiating substrate and preparation method thereof |
| CN113278910A (en) * | 2020-02-20 | 2021-08-20 | 江文忠 | Method for manufacturing copper-clad ceramic and composite board thereof |
| CN113278910B (en) * | 2020-02-20 | 2022-08-23 | 江文忠 | Method for manufacturing copper-clad ceramic and composite board thereof |
| CN113215518A (en) * | 2021-03-17 | 2021-08-06 | 江苏富乐德半导体科技有限公司 | Copper sheet oxidation method |
| CN113215518B (en) * | 2021-03-17 | 2022-10-11 | 江苏富乐华半导体科技股份有限公司 | Copper sheet oxidation method |
| CN116589298A (en) * | 2023-05-23 | 2023-08-15 | 福建华清电子材料科技有限公司 | Preparation method of thick copper-clad ceramic substrate for improving warpage |
| CN116589298B (en) * | 2023-05-23 | 2024-06-07 | 福建华清电子材料科技有限公司 | Preparation method of thick copper-clad ceramic substrate for improving warpage |
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Application publication date: 20171121 |