CN106927850A - A kind of preparation method of double-sided copper-clad ceramic substrate - Google Patents
A kind of preparation method of double-sided copper-clad ceramic substrate Download PDFInfo
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- CN106927850A CN106927850A CN201511016357.XA CN201511016357A CN106927850A CN 106927850 A CN106927850 A CN 106927850A CN 201511016357 A CN201511016357 A CN 201511016357A CN 106927850 A CN106927850 A CN 106927850A
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- Prior art keywords
- copper
- ceramic substrate
- double
- copper sheet
- clad ceramic
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Classifications
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
- C04B37/021—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles in a direct manner, e.g. direct copper bonding [DCB]
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/40—Metallic
- C04B2237/407—Copper
Abstract
The present invention relates to a kind of preparation method of double-sided copper-clad ceramic substrate, including:The first step:Ceramics base material and copper sheet are cleaned;Second step:Copper sheet is made annealing treatment under the first protective atmosphere, 500 DEG C~1060 DEG C of annealing temperature, make annealing treatment time 1min~30min;3rd step:Under the second protective atmosphere, overlayed and be sintered on pad by the order of the first copper sheet, ceramics, the second copper sheet, 1065 DEG C~1082 DEG C of sintering temperature, 1~100min of sintering time;4th step:After sintering is finished, double-sided copper-clad ceramic substrate is obtained.Be placed on pad for ceramics base material and copper sheet be sintered by the present invention, pad does not react and small to the damage of copper with copper, it is to avoid the product rejection that the pollution of porcelain powder is caused;Realize two sides to sinter simultaneously, it is to avoid larger thermal stress and copper crystal grain the continuing during secondary high-temperature that one side sintering is produced grows up, and substantially increases production efficiency and yields.
Description
Technical field
The invention belongs to ceramic metallization technical field, more particularly to a kind of preparation method of double-sided copper-clad ceramic substrate.
Background technology
As the development of power electronic device, circuit board integrated level are improved constantly with working frequency, heat dissipation problem has turned into power
The key issue for solving is had in development of electronic devices.Ceramic substrate is the envelope of high-power electronic device, ic substrate
Package material, is the crucial supplementary material in the technologies such as power electronic, Electronic Packaging and multi-chip module, and its performance decides mould
The radiating efficiency and reliability of block.
The DBC double-sided copper-clad ceramic substrates for using at present, the copper on ceramic wafer two sides is sintered respectively at twice.This work
Skill has the following disadvantages:
1st, because thermal coefficient of expansion is different, larger thermal stress can be produced between copper and ceramics during sintering one side, to substrate
Mechanical property is unfavorable;
2nd, the copper for first sintering will experience two pyroprocesses, and copper crystal grain continues to grow up during secondary high-temperature, to substrate
Mechanical property and surface state are unfavorable;
3rd, the twice that the time used is one side sintering is sintered, low production efficiency, comprehensive benefit is poor.
The content of the invention
It is an object of the invention to overcome the deficiencies in the prior art, there is provided a kind of preparation method of double-sided copper-clad ceramic substrate.This
The preparation method of invention is realized in the two-sided of ceramic substrate while cover copper, substrate function admirable, the surface of preparation are without dirt
Dye, and the preparation method production efficiency is high.
The purpose of the present invention is achieved through the following technical solutions:
It is an object of the invention to provide a kind of preparation method of double-sided copper-clad ceramic substrate, including:
The first step:Ceramics base material and copper sheet are cleaned;
Second step:Copper sheet is made annealing treatment under the first protective atmosphere, 500 DEG C~1060 DEG C of annealing temperature, made annealing treatment
Time 1min~30min;
3rd step:Under the second protective atmosphere, overlayed and carried out on pad by the order of the first copper sheet, ceramics, the second copper sheet
Sintering, 1065 DEG C~1082 DEG C of sintering temperature, 1~100min of sintering time;
4th step:After sintering is finished, double-sided copper-clad ceramic substrate is obtained.
Further, the annealing temperature in the step 2 is 650-850 DEG C.
Further, the first protective atmosphere in the step 2 is the nitrogen atmosphere of oxygen content 50ppm~3000ppm.
Further, the second protective atmosphere in the step 3 is the nitrogen atmosphere of oxygen content 5ppm~550ppm.
Further, the sintering time in the step 3 is 20-40min.
Further, the material of the pad in the step 3 be refractory metal material (high temperature resistant is up to 1200 DEG C) or not with
The ceramics of copper reaction;Wherein, refractory metal material is stainless steel, Inconel, nickel-cadmium etc.;The pottery not reacted with copper
Porcelain is selected from Y2O3、MgO、SiC、Si3N4In one or more composite ceramics.
Further, the thickness of the pad in the step 3 is 0.2mm~10mm;
Further, the preferred thickness of the pad is 1mm~3mm, and pad is excessively thin, is susceptible to deformation, blocked up, is made
Into operation inconvenience, it is unfavorable for production.
Further, the surface roughness Ra of the pad in the step 3 is 0.1 μm~10 μm, the rough surface of appropriateness
Degree can reduce the active area of copper and pad, prevent copper sheet from being completely attached to and the surface of defective copper with pad.
Compared with prior art, the positive effect of the present invention is as follows:
Be placed on pad for ceramics base material and copper sheet and be sintered by the present invention, and pad does not react and small to the damage of copper with copper, keeps away
The product rejection that the pollution of porcelain powder is caused is exempted from;Realize two sides to sinter simultaneously, it is to avoid the larger thermal stress that one side sintering is produced
And copper crystal grain continuing during secondary high-temperature grows up, and substantially increases production efficiency and yields.
Brief description of the drawings
Fig. 1 is the structural representation of double-sided copper-clad ceramic substrate of the invention;
Wherein, the first layers of copper -1, the second layers of copper -2, ceramics base material -3, pad -4.
Specific embodiment
With reference to specific embodiment, the present invention is expanded on further.It should be understood that these embodiments are merely to illustrate the present invention
Rather than limitation the scope of the present invention.In addition, it is to be understood that after the content for having read instruction of the present invention, art technology
Personnel can make various changes or modifications to the present invention, and these equivalent form of values equally fall within the application appended claims and limited
Fixed scope.
Embodiment 1
The first step:Ceramics base material 3, the first copper sheet 1 and the second copper sheet 2 are cleaned.With acid-base solution, deionized water,
The impurity of cleaning removal material surface is carried out to copper sheet, ceramics base material by the technique such as ultrasonic cleaning, spray, predrainage.
Second step:Copper sheet is made annealing treatment under the nitrogen atmosphere of oxygen content 1000ppm, 800 DEG C of design temperature,
The annealing time is 15min, its surface is produced certain thickness oxide layer.
3rd step:Under the nitrogen protection atmosphere of oxygen content 40ppm, by the first copper sheet 1, ceramics base material 3, the second bronze medal
The order of piece 2 is overlayed (first on pad 4 (the material Inconel718 of pad 4, thickness 3mm, 5 μm of roughness)
Copper sheet 1 is placed on pad 4, and ceramics 3 is placed on the surface of the first copper sheet 1, and the second copper sheet is placed on the surface of ceramics 3) carry out it is two-sided
Sinter simultaneously, 1080 DEG C of sintering temperature, sintering time 20min.
4th step:After sintering is finished, double-sided copper-clad ceramic substrate is obtained.
Gained double-sided copper-clad ceramic substrate adhesion is excellent, production efficiency is high and copper is in apparent good order and condition.
Embodiment 2
The first step:Ceramics base material 3, the first copper sheet 1 and the second copper sheet 2 are cleaned.With acid-base solution, deionized water,
The impurity of cleaning removal material surface is carried out to copper sheet, ceramics base material by the technique such as ultrasonic cleaning, spray, predrainage.
Second step:Copper sheet is made annealing treatment under the nitrogen atmosphere of oxygen content 950ppm, 900 DEG C of design temperature,
The annealing time is 15min, its surface is produced certain thickness oxide layer.
3rd step:Under the nitrogen protection atmosphere of oxygen content 30ppm, by the first copper sheet 1, ceramics base material 3, the second bronze medal
The order of piece 2 overlays (the material Y of pad 4 of pad 42O3, thickness 2mm, 4 μm of roughness) on (the first copper sheet
1 is placed on pad 4, and ceramics 3 is placed on the surface of the first copper sheet 1, and the second copper sheet is placed on the surface of ceramics 3) carry out it is two-sided simultaneously
Sintering, 1075 DEG C of sintering temperature, sintering time 30min.
4th step:After sintering is finished, double-sided copper-clad ceramic substrate is obtained.
Gained double-sided copper-clad ceramic substrate adhesion is excellent, production efficiency is high and copper is in apparent good order and condition.
Embodiment 3
The first step:Ceramics base material 3, the first copper sheet 1 and the second copper sheet 2 are cleaned.With acid-base solution, deionized water,
The impurity of cleaning removal material surface is carried out to copper sheet, ceramics base material by the technique such as ultrasonic cleaning, spray, predrainage.
Second step:Copper sheet is made annealing treatment under the nitrogen atmosphere of oxygen content 1100ppm, 780 DEG C of design temperature,
The annealing time is 15min, its surface is produced certain thickness oxide layer.
3rd step:Under the nitrogen protection atmosphere of oxygen content 35ppm, by the first copper sheet 1, ceramics base material 3, the second bronze medal
The order of piece 2 is overlayed (first on pad 4 (the material nickel-cadmium of pad 4, thickness 1mm, 3 μm of roughness)
Copper sheet 1 is placed on pad 4, and ceramics 3 is placed on the surface of the first copper sheet 1, and the second copper sheet is placed on the surface of ceramics 3) carry out it is two-sided
Sinter simultaneously, 1073 DEG C of sintering temperature, sintering time 25min.
4th step:After sintering is finished, double-sided copper-clad ceramic substrate is obtained.
Gained double-sided copper-clad ceramic substrate adhesion is excellent, production efficiency is high and copper is in apparent good order and condition.
Comparative example 1
The first step:Ceramics base material, the first copper sheet and the second copper sheet are cleaned.With acid-base solution, deionized water, lead to
Crossing the techniques such as ultrasonic cleaning, spray, predrainage carries out the impurity of cleaning removal material surface to copper sheet, ceramics base material.
Second step:Copper sheet is made annealing treatment under the nitrogen atmosphere of oxygen content 1000ppm, 800 DEG C of design temperature,
The annealing time is 15min, its surface is produced certain thickness oxide layer.
3rd step:Under the nitrogen protection atmosphere of oxygen content 40ppm, the first copper sheet is placed on ceramic substrate carries out
Simultaneously sinter, 1070 DEG C of sintering temperature, sintering time 20min.
4th step, under the nitrogen protection atmosphere of oxygen content 40ppm, sinters in the another side for having sintered the substrate of one side copper
Second copper sheet, 1080 DEG C of sintering temperature, sintering time 20min.
5th step:After sintering is finished, double-sided copper-clad ceramic substrate is obtained.
Compared with example 1, low production efficiency is by about one time for gained double-sided copper-clad ceramic substrate.
Comparative example 2
The first step:Ceramics base material 3, the first copper sheet 1 and the second copper sheet 2 are cleaned.With acid-base solution, deionized water,
The impurity of cleaning removal material surface is carried out to copper sheet, ceramics base material by the technique such as ultrasonic cleaning, spray, predrainage.
Second step:Copper sheet is made annealing treatment under the nitrogen atmosphere of oxygen content 950ppm, 900 DEG C of design temperature,
The annealing time is 15min, its surface is produced certain thickness oxide layer.
3rd step:Under the nitrogen protection atmosphere of oxygen content 30ppm, the first copper sheet is placed on ceramic substrate carries out
Simultaneously sinter, 1065 DEG C of sintering temperature, sintering time 30min.
4th step, under the nitrogen protection atmosphere of oxygen content 30ppm, sinters in the another side for having sintered the substrate of one side copper
Second copper sheet, 1075 DEG C of sintering temperature, sintering time 30min.
5th step:After sintering is finished, double-sided copper-clad ceramic substrate is obtained.
Compared with example 2, low production efficiency is by about one time for gained double-sided copper-clad ceramic substrate.
Comparative example 3
The first step:Ceramics base material 3, the first copper sheet 1 and the second copper sheet 2 are cleaned.With acid-base solution, deionized water,
The impurity of cleaning removal material surface is carried out to copper sheet, ceramics base material by the technique such as ultrasonic cleaning, spray, predrainage.
Second step:Copper sheet is made annealing treatment under the nitrogen atmosphere of oxygen content 1100ppm, 780 DEG C of design temperature,
The annealing time is 15min, its surface is produced certain thickness oxide layer.
3rd step:Under the nitrogen protection atmosphere of oxygen content 35ppm, the first copper sheet is placed on ceramic substrate carries out
Simultaneously sinter, 1068 DEG C of sintering temperature, sintering time 25min.
4th step, under the nitrogen protection atmosphere of oxygen content 35ppm, sinters in the another side for having sintered the substrate of one side copper
Second copper sheet, 1073 DEG C of sintering temperature, sintering time 25min.
5th step:After sintering is finished, double-sided copper-clad ceramic substrate is obtained.
Compared with example 3, low production efficiency is by about one time for gained double-sided copper-clad ceramic substrate.
The double-sided copper-clad ceramic substrate to embodiment 1-3 and comparative example 1-3 carries out bending strength, peel strength test respectively,
Result is as shown in table 1.
Bending strength test condition:10~35 DEG C of environment temperature, relative humidity≤80%, fulcrum spacing 30mm, loading speed
Rate 0.5mm/min;
Peel strength test condition:90 degree of strippings, 10~35 DEG C of environment temperature, relative humidity≤80%, speed setting 50
Mm/min, specimen width 5mm.
Table 1
General principle of the invention, principal character and advantages of the present invention has been shown and described above.The technology people of the industry
Member simply illustrates this hair it should be appreciated that the present invention is not limited to the above embodiments described in above-described embodiment and specification
Bright principle, various changes and modifications of the present invention are possible without departing from the spirit and scope of the present invention, these changes
Be all fall within the protetion scope of the claimed invention with improvement.The claimed scope of the invention is by appending claims and its waits
Jljl is defined.
Claims (9)
1. a kind of preparation method of double-sided copper-clad ceramic substrate, including:
The first step:Ceramics base material and copper sheet are cleaned;
Second step:Copper sheet is made annealing treatment under the first protective atmosphere, 500 DEG C~1060 DEG C of annealing temperature, make annealing treatment time 1min~30min;
3rd step:Under the second protective atmosphere, overlayed and be sintered on pad by the order of the first copper sheet, ceramics, the second copper sheet, 1065 DEG C~1082 DEG C of sintering temperature, 1~100min of sintering time;
4th step:After sintering is finished, double-sided copper-clad ceramic substrate is obtained.
2. the preparation method of a kind of double-sided copper-clad ceramic substrate according to claim 1, it is characterised in that:Annealing temperature in the step 2 is 650-850 DEG C.
3. the preparation method of a kind of double-sided copper-clad ceramic substrate according to claim 1, it is characterised in that:The first protective atmosphere in the step 2 is the nitrogen atmosphere of oxygen content 50ppm~3000ppm.
4. the preparation method of a kind of double-sided copper-clad ceramic substrate according to claim 1, it is characterised in that:The second protective atmosphere in the step 3 is the nitrogen atmosphere of oxygen content 5ppm~550ppm.
5. the preparation method of a kind of double-sided copper-clad ceramic substrate according to claim 1, it is characterised in that:Sintering time in the step 3 is 20-40min.
6. the preparation method of a kind of double-sided copper-clad ceramic substrate according to claim 1, it is characterised in that:The material of the pad in the step 3 is refractory metal material or the ceramics not reacted with copper;Wherein, refractory metal material is stainless steel, Inconel or nickel-cadmium;The ceramics not reacted with copper are selected from Y2O3、MgO、SiC、Si3N4In one or more composite ceramics.
7. the preparation method of a kind of double-sided copper-clad ceramic substrate according to claim 1, it is characterised in that:The thickness of the pad in the step 3 is 0.2mm~10mm.
8. the preparation method of a kind of double-sided copper-clad ceramic substrate according to claim 7, it is characterised in that:The thickness of the pad is 1mm~3mm.
9. the preparation method of a kind of double-sided copper-clad ceramic substrate according to claim 1, it is characterised in that:The surface roughness Ra of the pad in the step 3 is 0.1 μm~10 μm.
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108133889A (en) * | 2017-12-11 | 2018-06-08 | 上海申和热磁电子有限公司 | A kind of method that double-sided copper-clad ceramic substrate two sides is sintered simultaneously |
CN109047962A (en) * | 2018-07-13 | 2018-12-21 | 无锡天杨电子有限公司 | A method of for keeping interface smooth in multi-chip package brazing process |
CN109524291A (en) * | 2017-09-18 | 2019-03-26 | 株洲中车时代电气股份有限公司 | A kind of production method and tooling for power electronics unit |
CN110026633A (en) * | 2019-04-04 | 2019-07-19 | 河北躬责科技有限公司 | A kind of microchannel heat sink and welding method |
CN111278220A (en) * | 2018-12-04 | 2020-06-12 | 中科院微电子研究所昆山分所 | Preparation method of thick copper DCB plate |
CN114014682A (en) * | 2021-11-12 | 2022-02-08 | 江苏富乐华半导体科技股份有限公司 | Grinding-free simultaneous sintering method for double surfaces of ceramic copper-clad plate |
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CN101027265A (en) * | 2004-09-27 | 2007-08-29 | 日本碍子株式会社 | Support plate for use in firing and firing method for producing honeycomb formed article using the same |
CN101747073A (en) * | 2008-12-04 | 2010-06-23 | 赫克斯科技股份有限公司 | Manufacturing method of copper foil and ceramic composite board |
CN102931321A (en) * | 2012-11-16 | 2013-02-13 | 上海申和热磁电子有限公司 | Manufacturing method for thin-copper DBC substrate |
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US4563383A (en) * | 1984-03-30 | 1986-01-07 | General Electric Company | Direct bond copper ceramic substrate for electronic applications |
CN101027265A (en) * | 2004-09-27 | 2007-08-29 | 日本碍子株式会社 | Support plate for use in firing and firing method for producing honeycomb formed article using the same |
CN101747073A (en) * | 2008-12-04 | 2010-06-23 | 赫克斯科技股份有限公司 | Manufacturing method of copper foil and ceramic composite board |
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Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109524291A (en) * | 2017-09-18 | 2019-03-26 | 株洲中车时代电气股份有限公司 | A kind of production method and tooling for power electronics unit |
CN109524291B (en) * | 2017-09-18 | 2020-12-18 | 株洲中车时代半导体有限公司 | Production method and tool for power electronic unit |
CN108133889A (en) * | 2017-12-11 | 2018-06-08 | 上海申和热磁电子有限公司 | A kind of method that double-sided copper-clad ceramic substrate two sides is sintered simultaneously |
CN109047962A (en) * | 2018-07-13 | 2018-12-21 | 无锡天杨电子有限公司 | A method of for keeping interface smooth in multi-chip package brazing process |
CN109047962B (en) * | 2018-07-13 | 2020-09-22 | 无锡天杨电子有限公司 | Method for keeping interface smooth in multi-chip packaging and soldering process |
CN111278220A (en) * | 2018-12-04 | 2020-06-12 | 中科院微电子研究所昆山分所 | Preparation method of thick copper DCB plate |
CN110026633A (en) * | 2019-04-04 | 2019-07-19 | 河北躬责科技有限公司 | A kind of microchannel heat sink and welding method |
CN110026633B (en) * | 2019-04-04 | 2021-07-16 | 河北躬责科技有限公司 | Micro-channel radiator and welding method |
CN114014682A (en) * | 2021-11-12 | 2022-02-08 | 江苏富乐华半导体科技股份有限公司 | Grinding-free simultaneous sintering method for double surfaces of ceramic copper-clad plate |
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Application publication date: 20170707 |