CN109585307A - A kind of heat-radiating substrate and preparation method thereof - Google Patents
A kind of heat-radiating substrate and preparation method thereof Download PDFInfo
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- CN109585307A CN109585307A CN201811369118.6A CN201811369118A CN109585307A CN 109585307 A CN109585307 A CN 109585307A CN 201811369118 A CN201811369118 A CN 201811369118A CN 109585307 A CN109585307 A CN 109585307A
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- 239000000758 substrate Substances 0.000 title claims abstract description 39
- 238000002360 preparation method Methods 0.000 title abstract description 8
- 239000010949 copper Substances 0.000 claims abstract description 121
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 120
- 229910052802 copper Inorganic materials 0.000 claims abstract description 120
- 238000004140 cleaning Methods 0.000 claims abstract description 37
- 238000004519 manufacturing process Methods 0.000 claims abstract description 20
- 238000005245 sintering Methods 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 12
- 239000007788 liquid Substances 0.000 claims abstract description 11
- 230000003647 oxidation Effects 0.000 claims abstract description 8
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 8
- 238000013461 design Methods 0.000 claims abstract description 4
- 238000012545 processing Methods 0.000 claims abstract description 4
- 239000007921 spray Substances 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 13
- 239000000919 ceramic Substances 0.000 claims description 13
- 239000001301 oxygen Substances 0.000 claims description 13
- 229910052760 oxygen Inorganic materials 0.000 claims description 13
- 230000002000 scavenging effect Effects 0.000 claims description 13
- 238000005554 pickling Methods 0.000 claims description 10
- 229910017083 AlN Inorganic materials 0.000 claims description 9
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 9
- 239000003513 alkali Substances 0.000 claims description 9
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 claims description 8
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 8
- 239000002253 acid Substances 0.000 claims description 6
- 238000002791 soaking Methods 0.000 claims description 5
- 238000001039 wet etching Methods 0.000 claims description 5
- 238000003780 insertion Methods 0.000 claims description 4
- 230000037431 insertion Effects 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 238000006386 neutralization reaction Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 5
- 229910052709 silver Inorganic materials 0.000 abstract description 2
- 239000004332 silver Substances 0.000 abstract description 2
- HEMHJVSKTPXQMS-UHFFFAOYSA-M sodium hydroxide Inorganic materials [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 38
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 19
- 239000003921 oil Substances 0.000 description 12
- 238000012360 testing method Methods 0.000 description 4
- 239000002585 base Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- BZSXEZOLBIJVQK-UHFFFAOYSA-N 2-methylsulfonylbenzoic acid Chemical compound CS(=O)(=O)C1=CC=CC=C1C(O)=O BZSXEZOLBIJVQK-UHFFFAOYSA-N 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
- H01L21/4882—Assembly of heatsink parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention discloses a kind of production methods of heat-radiating substrate, comprising the following steps: cleaning copper sheet surface, every layer of copper sheet figure of design concurrently set location hole；Copper sheet is etched, the copper sheet with target hollow out figure is made；The cleaning copper sheet for having target hollow out figure, pre-oxidizes the two sides of the copper sheet after cleaning；After copper sheet heap poststack after pre-oxidation is laid on load bearing board and is positioned to copper sheet, sintering；Sintered substrate is subjected to surface and internal gold-plated processing, heat-radiating substrate is made.Prepare complicated microchannel structure using directly covering process for copper multilayer copper sheet being stacked, each layer copper sheet keeps original structure during covering copper, and be tightly combined between each layer copper sheet, intensity it is high, meet the requirement of highly pressurised liquid pressure (>=0.5MPa)；Meanwhile selecting the microchannel of copper material preparation that there is superelevation thermal conductivity (copper thermal conductivity is only second to silver), radiating efficiency is high.
Description
Technical field
The invention belongs to high power device heat-radiating substrate manufacturing fields, and in particular to a kind of heat-radiating substrate and its production side
Method.
Background technique
With high power device (high power laser chip, high-power semiconductor module, large scale integrated circuit, superelevation
Power LED) current density further increases, puts forward higher requirements to the heat-sinking capability of device, and it is conventional by highly thermally conductive
Rate substrate, which passively radiates, is no longer satisfied requirement, needs to seek the emerging scheme of more high cooling efficiency.Vane type wind-cooling heat dissipating
It is also a kind of conventional radiator structure, is leaf structure to be produced using machining, and weld (bonding) in heat-radiating substrate
Heat is taken out of by cross-ventilation in surface, and this heat-radiating substrate has been widely used in the heat dissipation of great power LED etc., still
Radiating efficiency has limitation.Microchannel radiator structure is the microchannel that production has certain track in heat-radiating substrate, using liquid
Body substance quickly takes heat out of according to particular track, and radiating efficiency is high.The substrate of microchannel structure can have ceramic base and metal
Base, ceramic base material microchannel stability is good, but preparation difficulty is big, and inner passage is not smooth enough, it is difficult to prepare complicated micro- logical
Road structure.
Summary of the invention
Based on this, the present invention provides a kind of production method of heat-radiating substrate, using directly covering process for copper for multilayer copper sheet
It is stacked and prepares complicated microchannel structure, each layer copper sheet keeps original structure, and each layer copper during covering copper
It is tightly combined between piece, intensity height, meets the requirement of highly pressurised liquid pressure (>=0.5MPa)；Meanwhile selecting the microchannel of copper material preparation
With superelevation thermal conductivity (copper thermal conductivity is only second to silver), radiating efficiency is high.
To achieve the goals above, the invention adopts the following technical scheme:
A kind of production method of heat-radiating substrate, mainly comprises the steps that
A, copper sheet surface is cleaned, every layer of copper sheet figure of design concurrently sets location hole, and each layer hollow-out part can when to stack
Accurate perforation；
B, the copper sheet with target hollow out figure is made in the copper sheet in etch step a；
C, the copper sheet that target hollow out figure is had described in cleaning, pre-oxidizes the two sides of the copper sheet after cleaning, makes copper sheet two
Face is respectively formed oxide layer；
D, after the copper sheet heap poststack after pre-oxidation being laid on load bearing board and being positioned to copper sheet, sintering；
E, sintered substrate is subjected to surface and internal gold-plated processing, heat-radiating substrate is made.
Production method of the invention is the knot realized in multilayer copper sheet between copper sheet and copper sheet using copper-oxygen eutectic reaction
It closes, is combined together adjacent two layers when copper will melt.The high-purity oxygen-free copper that the present invention selects thermal conductivity high, using straight
It connects and covers process for copper and be sintered together copper sheet multiple-level stack, form the internal heat-radiating substrate containing microchannel, which is
Microchannel water cooling substrate, the heat-radiating substrate are had excellent performance, and difficulty of processing is low, it is easy to accomplish batch production.
Further, in step a, the copper sheet with a thickness of 0.1 ~ 0.4mm.The thickness of copper sheet can choose different thickness
Degree is freely arranged in pairs or groups.
Further, the cleaning process in step a neutralization procedure c is identical, is pickling after first alkali cleaning.It is used in the present invention
Alkali cleaning removes the greasy dirt on copper sheet surface, then the oxide layer using pickling removal copper sheet surface.
Preferably, hydroxyl concentration is 0.002mol/L ~ 0.5mol/L in lye used in the alkali cleaning, and alkali liquid temperature is
30 ~ 60 DEG C, using spray cleaning, scavenging period is 1 ~ 10min for the alkali cleaning.
Preferably, hydrogen ion concentration is 0.002mol/L ~ 0.5mol/L in acid solution used in the pickling, and acid liquor temperature is
30 ~ 60 DEG C, using spray cleaning, scavenging period is 1 ~ 10min for the pickling.
Further, in step b, the etching uses wet etching, and the wet etching carries out copper sheet using acid solution
Etching, hydrochloric acid, sodium chlorate system and hydrochloric acid can be selected in etching liquid medicine system, hydrogen peroxide system carries out.It is flowed according to multilayer microchannel
Logical result designs the figure of every layer of copper sheet, and target hollow out figure is formed on every layer of copper sheet using wet etching.Different layers of copper are engraved
Hollow structure unrestricted choice combination as needed is not done specific here to obtain the heat-radiating substrate of different microchannel structure
It limits.
Further, the pre-oxidation is formed simultaneously oxide layer, the temperature of the thermal oxide on the two sides of copper sheet for thermal oxide
Degree is 300 ~ 900 DEG C, and oxygen content is 50ppm ~ 1000ppm.When the two sides of copper sheet is formed simultaneously oxide layer, it is ensured that copper sheet two sides
The thickness uniformity of oxide layer.
Further, described to be located through the location hole that positioning pin is inserted on the copper sheet and realize copper sheet in institute in step d
State the positioning on load bearing board, wherein the positioning pin and the load bearing board are all made of silicon carbide ceramics, silicon nitride or aluminium nitride pottery
Porcelain is made, the load bearing board with a thickness of 0.5 ~ 3mm.The material of positioning pin and load bearing board should be using stabilization, high temperature resistant and
With the material of copper and Cu oxide wettability difference, therefore, the present invention preferred silicon carbide ceramics, silicon nitride or aluminium nitride ceramics
Manufactured positioning pin and load bearing board, so that it is guaranteed that the oxide layer of copper sheet will not react burning with load bearing board in high-temperature sintering process
Knot together, solves the problems, such as that adhesion or bonding occur in copper sheet and load bearing board in sintering bonding process.Burning is held described in preferred
Plate with a thickness of 0.5 ~ 3mm.
Further, in step d, the technological parameter of the sintering are as follows: 1055 ~ 1075 DEG C of temperature, soaking time 1 ~
15min, oxygen content are 0ppm ~ 200ppm.
It is another object of the present invention to provide using heat-radiating substrate made from above-mentioned production method, stack described in being formed
The copper sheet of heat-radiating substrate is 2 ~ 20.
Compared with prior art, production method of the invention can produce internal three Wikis containing complicated microchannel
Plate, channel can realize three-dimensional through interconnection, and multilayer copper sheet bonded interface is tightly combined.Made from production method through the invention
Heat-radiating substrate is able to bear high water pressure (>=0.5MPa), good (the leak rate < 1 × 10 of air-tightness-8atm·cm3sec-1), superelevation
The amount of localized heat of generation can be quickly transmitted in micro channels liquid by the oxygen-free copper of thermal conductivity, realize excellent heat dissipation effect.
Detailed description of the invention
Fig. 1 is the schematic diagram of the section structure when heat-radiating substrate of the present invention is sintered.
In figure: 1. load bearing boards, 2. copper sheets, 3. positioning pins.
Specific embodiment
To facilitate the understanding of the present invention, below in conjunction with specific embodiments to invention is more fully described.But
It is that the invention can be realized in many different forms, however it is not limited to embodiments described herein.On the contrary, providing
The purpose of these embodiments is to make to make the present disclosure more fully understandable.
Unless otherwise defined, all technical and scientific terms used herein and belong to technical field of the invention
The normally understood meaning of technical staff is identical.Term as used herein in the specification of the present invention is intended merely to description tool
The purpose of the embodiment of body, it is not intended that in the limitation present invention.
Embodiment 1
It uses hydroxyl concentration for the sodium hydroxide solution of 0.2mol/L spray cleaning copper sheet, removes the oil on copper sheet surface, cleaning
Time is 3min, and sodium hydroxide solution temperature is 45 DEG C；Use hydrogen ion solubility for the spray cleaning oil removing of the hydrochloric acid of 0.2mol/L
Copper sheet surface afterwards, removes the oxide layer on surface, scavenging period 3min, and 45 DEG C of solution temperature；
Every layer of copper sheet figure is designed according to multilayer microchannel circulation result, HCl and H is become using group2O2Etching liquid to pickling
Copper sheet afterwards performs etching, and forms target hollow out figure in every layer of copper sheet, takes off after etching except copper sheet surface sense light protective film；
Use hydroxyl concentration for the sodium hydroxide solution of 0.2mol/L spray cleaning copper sheet the copper sheet for having etched hollow out figure,
The oil on copper sheet surface, scavenging period 3min are removed, sodium hydroxide solution temperature is 45 DEG C；Use hydrogen ion solubility for
Copper sheet surface after the hydrochloric acid spray cleaning oil removing of 0.2mol/L, removes the oxide layer on surface, scavenging period 3min, solution temperature
45 DEG C of degree；
By in the copper sheet insertion tool fixture after cleaning, thermal oxide, two face contact oxygen-containing atmosphere of copper sheet, temperature are carried out in merging furnace
It is 800 DEG C, oxygen content is 150ppm in furnace, forms uniform, compact oxidation layer in copper sheet two sides；
Well-oxygenated copper sheet is stacked gradually in sequence, is placed on aluminium nitride ceramics load bearing board, it is fixed using aluminium nitride ceramics
Position pin carries out contraposition fixation to multilayer copper sheet, and the oxide layer of adjacent copper sheet successively fits closely, and burns by net strip sintering furnace high temperature
Knot, sintering furnace temperature are 1055 DEG C, soaking time 5min, and oxygen content is 10 ~ 50ppm in sintering furnace；
The inside microchannel heat-radiating substrate periphery cutting sintered, removes registration holes and burr, using electroplating technology to its surface
And internal microchannel carries out gold-plated, the preparation of the internal microchannel heat-radiating substrate of completion.
Embodiment 2
It uses hydroxyl concentration for the sodium hydroxide solution of 0.002mol/L spray cleaning copper sheet, removes the oil on copper sheet surface, clearly
Washing the time is 10min, and sodium hydroxide solution temperature is 30 DEG C；Use hydrogen ion solubility for the spray cleaning of the hydrochloric acid of 0.002mol/L
Copper sheet surface after oil removing, removes the oxide layer on surface, scavenging period 10min, and 30 DEG C of solution temperature；
Every layer of copper sheet figure is designed according to multilayer microchannel circulation result, HCl and H is become using group2O2Etching liquid to pickling
Copper sheet afterwards performs etching, and forms target hollow out figure in every layer of copper sheet, takes off after etching except copper sheet surface sense light protective film；
Use hydroxyl concentration for the sodium hydroxide solution of 0.002mol/L spray cleaning copper the copper sheet for having etched hollow out figure
Piece, removes the oil on copper sheet surface, scavenging period 10min, and sodium hydroxide solution temperature is 30 DEG C；Use hydrogen ion solubility for
Copper sheet surface after the hydrochloric acid spray cleaning oil removing of 0.002mol/L, removes the oxide layer on surface, scavenging period 10min, molten
30 DEG C of liquid temperature；
By in the copper sheet insertion tool fixture after cleaning, thermal oxide, two face contact oxygen-containing atmosphere of copper sheet, temperature are carried out in merging furnace
It is 300 DEG C, oxygen content is 1000ppm in furnace, forms uniform, compact oxidation layer in copper sheet two sides；
Well-oxygenated copper sheet is stacked gradually in sequence, is placed on aluminium nitride ceramics load bearing board, it is fixed using aluminium nitride ceramics
Position pin carries out contraposition fixation to multilayer copper sheet, and the oxide layer of adjacent copper sheet successively fits closely, and burns by net strip sintering furnace high temperature
Knot, sintering furnace temperature are 1065 DEG C, soaking time 15min, and oxygen content is 0 ~ 20ppm in sintering furnace；
The inside microchannel heat-radiating substrate periphery cutting sintered, removes registration holes and burr, using electroplating technology to its surface
And internal microchannel carries out gold-plated, the preparation of the internal microchannel heat-radiating substrate of completion.
Embodiment 3
It uses hydroxyl concentration for the sodium hydroxide solution of 0.5mol/L spray cleaning copper sheet, removes the oil on copper sheet surface, cleaning
Time is 1min, and sodium hydroxide solution temperature is 50 DEG C；Use hydrogen ion solubility for the spray cleaning oil removing of the hydrochloric acid of 0.5mol/L
Copper sheet surface afterwards, removes the oxide layer on surface, scavenging period 1min, and 50 DEG C of solution temperature；
Every layer of copper sheet figure is designed according to multilayer microchannel circulation result, HCl and H is become using group2O2Etching liquid to pickling
Copper sheet afterwards performs etching, and forms target hollow out figure in every layer of copper sheet, takes off after etching except copper sheet surface sense light protective film；
Use hydroxyl concentration for the sodium hydroxide solution of 0.5mol/L spray cleaning copper sheet the copper sheet for having etched hollow out figure,
The oil on copper sheet surface, scavenging period 1min are removed, sodium hydroxide solution temperature is 50 DEG C；Use hydrogen ion solubility for
Copper sheet surface after the hydrochloric acid spray cleaning oil removing of 0.5mol/L, removes the oxide layer on surface, scavenging period 1min, solution temperature
50 DEG C of degree；
By in the copper sheet insertion tool fixture after cleaning, thermal oxide, two face contact oxygen-containing atmosphere of copper sheet, temperature are carried out in merging furnace
It is 900 DEG C, oxygen content is 50ppm in furnace, forms uniform, compact oxidation layer in copper sheet two sides；
Well-oxygenated copper sheet is stacked gradually in sequence, is placed on aluminium nitride ceramics load bearing board, it is fixed using aluminium nitride ceramics
Position pin carries out contraposition fixation to multilayer copper sheet, and the oxide layer of adjacent copper sheet successively fits closely, and burns by net strip sintering furnace high temperature
Knot, sintering furnace temperature are 1075 DEG C, soaking time 1min, and oxygen content is 100 ~ 200ppm in sintering furnace；
The inside microchannel heat-radiating substrate periphery cutting sintered, removes registration holes and burr, using electroplating technology to its surface
And internal microchannel carries out gold-plated, the preparation of the internal microchannel heat-radiating substrate of completion.
The heat-radiating substrate prepared in embodiment 1 ~ 3 is subjected to hydraulic pressure test and air tightness test, wherein hydraulic pressure test method
The variation of heat-radiating substrate inlet outlet pressure differential is tested, heat-radiating substrate intake pressure and discharge pressure are monitored, by test, heat-radiating substrate energy
Enough bear high water pressure < (>=0.5MPa)；Its air tightness test standard measures in the present invention according to GJB548B method 1014.2
The leak rate < 1 × 10 of heat-radiating substrate-8atm·cm3sec-1。
Each technical characteristic of embodiment described above can be combined arbitrarily, for simplicity of description, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, all should be considered as described in this specification.
The embodiments described above only express several embodiments of the present invention, and the description thereof is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to protection of the invention
Range.Therefore, the scope of protection of the patent of the invention shall be subject to the appended claims.
Claims (10)
1. a kind of production method of heat-radiating substrate, which comprises the following steps:
A, copper sheet surface is cleaned, every layer of copper sheet figure of design concurrently sets location hole；
B, the copper sheet with target hollow out figure is made in the copper sheet in etch step a；
C, the copper sheet that target hollow out figure is had described in cleaning, pre-oxidizes the two sides of the copper sheet after cleaning；
D, after the copper sheet heap poststack after pre-oxidation being laid on load bearing board and being positioned to copper sheet, sintering；
E, sintered substrate is subjected to surface and internal gold-plated processing, heat-radiating substrate is made.
2. production method as described in claim 1, which is characterized in that in step a, the copper sheet with a thickness of 0.1 ~ 0.4mm.
3. production method as described in claim 1, which is characterized in that the cleaning process in step a neutralization procedure c is identical,
For pickling after first alkali cleaning.
4. production method as claimed in claim 3, which is characterized in that hydroxyl concentration is in lye used in the alkali cleaning
0.002mol/L ~ 0.5mol/L, alkali liquid temperature are 30 ~ 60 DEG C, and using spray cleaning, scavenging period is 1 ~ 10min for the alkali cleaning.
5. production method as claimed in claim 3, which is characterized in that hydrogen ion concentration is in acid solution used in the pickling
0.002mol/L ~ 0.5mol/L, acid liquor temperature are 30 ~ 60 DEG C, and using spray cleaning, scavenging period is 1 ~ 10min for the pickling.
6. production method as described in claim 1, which is characterized in that in step b, the etching uses wet etching, described
Wet etching performs etching copper sheet using acid solution.
7. production method as described in claim 1, which is characterized in that the pre-oxidation is thermal oxide, same on the two sides of copper sheet
When form oxide layer, the temperature of the thermal oxide is 300 ~ 900 DEG C, and oxygen content is 50ppm ~ 1000ppm.
8. production method as described in claim 1, which is characterized in that described to be located through described in positioning pin insertion in step d
Location hole on copper sheet realizes positioning of the copper sheet on the load bearing board, wherein the positioning pin and the load bearing board are all made of
Silicon carbide ceramics, silicon nitride or aluminium nitride ceramics are made, the load bearing board with a thickness of 0.5 ~ 3mm.
9. production method as described in claim 1, which is characterized in that in step d, the technological parameter of the sintering are as follows: temperature
1055 ~ 1075 DEG C, 1 ~ 15min of soaking time, oxygen content is 0ppm ~ 200ppm.
10. a kind of use the heat-radiating substrate as made from claim 1 ~ 9 described in any item production methods, which is characterized in that heap
The folded copper sheet for forming the heat-radiating substrate is 2 ~ 20.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115529801A (en) * | 2022-10-08 | 2022-12-27 | 江苏富乐华功率半导体研究院有限公司 | Structure of micro-channel radiator and preparation method thereof |
| CN115558880A (en) * | 2022-11-30 | 2023-01-03 | 四川富乐华半导体科技有限公司 | Method for oxidizing DCB copper sheet |
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| CN107369625A (en) * | 2017-07-01 | 2017-11-21 | 合肥圣达电子科技实业有限公司 | The manufacture method of DBC substrates and the DBC substrates manufactured using this method |
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2018
- 2018-11-16 CN CN201811369118.6A patent/CN109585307A/en not_active Withdrawn
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5903583A (en) * | 1995-02-22 | 1999-05-11 | Ullman; Christoph | Diode laser component with cooling element and diode laser module |
| CN107369625A (en) * | 2017-07-01 | 2017-11-21 | 合肥圣达电子科技实业有限公司 | The manufacture method of DBC substrates and the DBC substrates manufactured using this method |
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| CN115529801A (en) * | 2022-10-08 | 2022-12-27 | 江苏富乐华功率半导体研究院有限公司 | Structure of micro-channel radiator and preparation method thereof |
| CN115529801B (en) * | 2022-10-08 | 2024-01-02 | 江苏富乐华功率半导体研究院有限公司 | Structure of micro-channel radiator and preparation method thereof |
| CN115558880A (en) * | 2022-11-30 | 2023-01-03 | 四川富乐华半导体科技有限公司 | Method for oxidizing DCB copper sheet |
| CN115558880B (en) * | 2022-11-30 | 2023-03-03 | 四川富乐华半导体科技有限公司 | Method for oxidizing DCB copper sheet |
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