CN107994035A - 阵列基板的制作方法、阵列基板及显示装置 - Google Patents

阵列基板的制作方法、阵列基板及显示装置 Download PDF

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CN107994035A
CN107994035A CN201711338767.5A CN201711338767A CN107994035A CN 107994035 A CN107994035 A CN 107994035A CN 201711338767 A CN201711338767 A CN 201711338767A CN 107994035 A CN107994035 A CN 107994035A
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metal layer
insulating layer
base palte
array base
layer
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赵梦
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BOE Technology Group Co Ltd
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BOE Technology Group Co Ltd
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Priority to CN201711338767.5A priority Critical patent/CN107994035A/zh
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Priority to US16/106,064 priority patent/US10573669B2/en
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Abstract

本发明公开一种阵列基板的制作方法，所述方法包括：在衬底基板上形成第一金属层；在所述第一金属层上利用含硅有机材料形成绝缘层；在所述绝缘层上形成第二金属层；以及采用氧离子刻蚀工艺对所述第二金属层进行图案化，以部分覆盖所述绝缘层；所述氧离子刻蚀工艺在所述绝缘层未被所述第二金属层覆盖的表面形成氧化硅层，本发明还公开了一种阵列基板及包括该阵列基板的显示装置，本发明采用含硅光刻胶形成绝缘层，可防止绝缘层在第二金属层图案化的过程中被腐蚀而导致工艺问题。

Description

阵列基板的制作方法、阵列基板及显示装置
技术领域
本发明涉及显示技术领域。更具体地，涉及一种阵列基板的制作方法、阵列基板及显示装置。
背景技术
随着低温多晶硅(Low Temperature Poly-Silicon，LTPS)触控显示面板的发展，对生产工艺和设计的要求越来越高。在OLED背板工艺中，越来越多地应用到两层金属层的工艺结构，即为了提高显示面板的像素，可将TFT阵列的包括源漏极及源漏极线的金属层与包括显示装置中功能层的金属层以两层结构实现，通过两层金属间的绝缘层实现绝缘。进一步可通过形成在绝缘层中的过孔实现两层中部分金属的电连接。
上述两层金属中间的绝缘层一般采用氧化硅或氮化硅等无机层。无机层具有覆盖性较差，弯折性较差等缺点，不适用于OLED显示装置，更不适用于柔性显示装置中。采用有机材料例如聚酰亚胺作为绝缘层的材料，可以克服传统无极绝缘层的以上缺点。但是，常规绝缘层所采用的聚酰亚胺光刻胶是基于碳链结构的聚合物材料，在需要对形成在绝缘层上的金属层进行图案化时，聚酰亚胺在氧离子刻蚀工艺容易中被腐蚀掉，造成工艺困难，并会导致绝缘层上的金属层形成凹陷，甚至与下层金属层接触，破坏两层金属层之间的绝缘，影响产品质量。
发明内容
本发明的目的在于提供一种易于实现工艺控制且具有良好成品率的阵列基板、阵列基板的制作方法及包括这种阵列基板的显示装置。
根据本发明的第一方面，提供一种阵列基板的制作方法，所述方法包括：
在衬底基板上形成第一金属层；
在所述第一金属层上利用含硅有机材料形成绝缘层；
在所述绝缘层上形成第二金属层；以及
采用氧离子刻蚀工艺对所述第二金属层进行图案化，以部分覆盖所述绝缘层；
所述氧离子刻蚀工艺在所述绝缘层未被所述第二金属层覆盖的表面形成氧化硅层。
优选地，该方法进一步包括对所述绝缘层进行图案化形成过孔的步骤。
优选地，所述第二金属层的一部分通过形成在绝缘层中的过孔与所述第一金属层的一部分电连接。
优选地，
所述阵列基板包括TFT阵列；
所述第一金属层包括TFT阵列的源极、漏极、源极线和漏极线。
优选地，所述第二金属层包括像素电极，所述漏极线通过形成在绝缘层中的过孔与像素电极电连接。
优选地，所述第一金属层还包括第一信号线，所述第一信号线通过形成在绝缘层中的过孔与第二金属层电连接。
优选地，所述第一金属层包括触控信号线，所述第二金属层包括触控电极，所述触控信号线通过形成在绝缘层中的过孔与触控电极电连接。
优选地，所述第二金属层包括遮光层。
优选地，所述含硅有机材料为含硅聚酰亚胺或聚二甲基硅氧烷。
优选地，所述氧离子刻蚀工艺为氧等离子体刻蚀或氧反应离子刻蚀。
优选地，所述阵列基板为OLED阵列基板。
根据本发明的第二方面，提供一种阵列基板，包括
衬底基板，
衬底基板上的第一金属层，
形成在第一金属层上的绝缘层，和
部分地形成在绝缘层上的第二金属层，
所述绝缘层由含硅光刻胶形成，且
所述绝缘层未被所述第二金属层覆盖的表面形成有氧化硅层。
根据本发明的第三方面，提供一种显示装置，包括如权利要求上所述的阵列基板。
本发明中通过采用含硅光刻胶形成绝缘层，在采用阳离子腐蚀工艺对第二金属层进行刻蚀时，氧离子与含硅光刻胶反应形成氧化硅层覆盖于绝缘层表面，作为保护层，防止绝缘层在氧离子刻蚀工艺中被刻蚀掉。通过采用含硅光刻胶作为两层金属层之间的绝缘层，在不改变现有阵列基板制备工艺的情况下，在提高阵列基板的像素密度的情况下，提高了产品质量和成品率，提供了一种性能良好具有广泛适用性的阵列基板。
附图说明
下面结合附图对本发明的具体实施方式作进一步详细的说明。
图1示出根据本发明第一实施例的阵列基板的示意图；
图2示出根据本发明第二实施例的阵列基板的示意图；
图3-7示出根据本发明的阵列基板制作方法流程图。
附图说明：
100、衬底基板，200、第一金属层，300、绝缘层，400、第二金属层，301、过孔，302、氧化硅层。
具体实施方式
为了更清楚地说明本发明，下面结合优选实施例和附图对本发明做进一步的说明。附图中相似的部件以相同的附图标记进行表示。本领域技术人员应当理解，下面所具体描述的内容是说明性的而非限制性的，不应以此限制本发明的保护范围。
本发明的说明书和权利要求书及上述附图中的属于“第一”、“第二”等是用于区别不同的对象，而不是用于描述特定顺序。此外，术语“包括”和“具有”以及它们任何变形，意图在于覆盖不排他的包含。例如包含了一系列步骤或单元的过程、方法、系统、产品或设备没有限定于已列出的步骤或单元，而是可选地还包括没有列出的步骤或单元，或可选地还包括对于这些过程、方法或设备固有的其他步骤或单元。
图1示出根据本发明第一实施例的阵列基板的示意图，本实施例的阵列基板包括衬底基板100、形成在衬底基板上的第一金属层200、形成在第一金属层上的绝缘层300，和部分地形成在绝缘层上的第二金属层400，绝缘层300的部分表面未被第二金属层覆盖。所述绝缘层300由含硅有机材料制成，含硅有机材料可以是如本实施例中采用的含硅光刻胶形成，绝缘层300未被第二金属层覆盖的表面302包括氧化硅层。采用含硅光刻胶形成绝缘层，在对第二金属层进行刻蚀时，采用氧离子刻蚀的工艺步骤，氧离子与含硅光刻胶中的硅反应形成氧化硅层作为保护层，可防止绝缘层在氧离子刻蚀工艺中被刻蚀掉。
所述衬底基板可以包括例如玻璃材料、金属材料或塑料材料(如聚对苯二甲酸乙二醇醋(PET)、聚萘二甲酸乙二醇醋(PEN)、聚酰亚胺(PI))的各种材料中的一种或多种形成的基底。衬底基板可以包括形成在基底上的TFT阵列。衬底基板可以是刚性的或柔性的。当衬底基板是柔性的时，衬底基板可以是可弯曲的或可折叠的。
优选地，所述含硅有机材料可以采用含硅光刻胶，含硅光刻胶可为主链含硅、以硅氧键作为主链或含硅的光刻胶材料例如含硅聚酰亚胺或聚二甲基硅氧烷(PDMS)类材料，更优选地，可采用含硅聚酰亚胺，含硅聚酰亚胺为有机高分子材料，覆盖性及弯折性好，适用范围广。
根据本发明的一个示例，阵列基板包括TFT阵列，TFT阵列上的第一金属层是包括用于形成TFT阵列源漏极和源漏极布线的源漏金属层，第二金属层是用于形成显示面板或显示装置的一个功能层。根据一个优选示例，该阵列基板用于具有指纹识别功能的显示装置，第二金属层可以是用于指纹识别功能的遮光层。源漏金属层和遮光层之间形成有用于绝缘的绝缘层。绝缘层的一部分未被第二金属层覆盖，可用于局部透光。通过采用含硅光刻胶，绝缘层平整地形成在源漏金属层和遮光层之间，可形成高质量的遮光层，改善触控面板的指纹识别灵敏度和提高显示装置的显示质量。
图2示出根据本发明第二实施例的阵列基板的示意图，本实施例的阵列基板包括衬底基板100、形成在衬底基板上的第一金属层200、形成在第一金属层上的绝缘层300，和部分地形成在绝缘层上的第二金属层400，绝缘层300的部分表面302未被第二金属层覆盖，第二金属层400通过形成在绝缘层中的过孔301与第一金属层电连接。所述绝缘层300由含硅光刻胶形成，在绝缘层300表面302形成氧化硅层。在该实施例中，阵列基板包括TFT阵列，TFT阵列上的第一金属层是包括用于形成TFT阵列源漏极和源漏极线的源漏金属层。
根据本发明的一个示例，阵列基板上的第一金属层包括TFT阵列源漏极和源漏极线的源漏金属层，功能层包括像素电极，形成在源漏金属层中漏极线通过形成在绝缘层中的过孔与像素电极电连接。利用含硅光刻胶形成绝缘层可以通过一次图案化实现对绝缘层的图案化，在减少工艺步骤并降低工艺成本的同时，避免多次腐蚀对下层TFT阵列的影响，并在采用氧离子作为刻蚀剂的刻蚀工艺中，可通过在绝缘层表面形成氧化硅层，提高产品质量和成品率。
根据本发明的另一个示例，阵列基板包括TFT阵列，TFT阵列上的第一金属层是包括用于形成TFT阵列源漏极和源漏极线的源漏金属层，该源漏金属层进一步包括信号线，为用作功能层的第二金属层提供相应信号。例如信号线为触控信号线，第二金属层例如包括用于形成具有触控功能的显示面板的触控电极和公共电极。触控电极和公共电极时分复用，以使显示面板既可以用作触控基板也可以显示基板，提高像素密度并提高显示装置的集成度，改善用户体验。触控电极与触控信号线通过形成在绝缘层中的过孔电连接。利用含硅光刻胶形成绝缘层可以通过一次图案化实现对绝缘层的图案化，在减少工艺步骤并降低工艺成本的同时，避免多次腐蚀对下层TFT阵列的影响，并在采用氧离子作为刻蚀剂的刻蚀工艺中，可通过在绝缘层表面形成氧化硅层，提高产品质量和成品率。
可以理解，本发明中的第一金属层与第二金属层的功能不仅限于具体实施例中的示例，本发明也可适用于其他中间设有绝缘层的双层金属层结构中。
下面参照附图3-7，详细描述根据本发明的阵列基板的制作方法。
如图3所示，提供衬底基板100，在衬底基板上形成第一金属层200。
衬底基板例如是其上已形成TFT阵列的基板，例如包括基底，栅极，有源层和形成栅极和有源层之间的栅极绝缘层。第一金属层例如是用于形成源极、漏极和源极线、漏极线的金属层。
如图4所示，在所述第一金属层200上形成绝缘层300。
在第一金属层上，例如通过旋涂或丝网印刷，施加含硅聚酰亚胺形成用于绝缘的绝缘层。
如图5所示，对绝缘层进行图案化，得到开孔301。
根据需要，可以对绝缘层进行图案化。采用含硅光刻胶形成的绝缘层，可通过一次光刻工艺对绝缘层进行图案化。与采用无机材料例如氧化硅、碳化硅作为绝缘层和绝缘层的工艺相比，减少了图案转移和光刻胶剥离的步骤，可以提高产品质量和成品率。
如图6所示，在图案化的绝缘层300上形成第二金属层400。第二金属层通过形成在绝缘层中的过孔与第一金属层电连接。
如图7所示，采用氧离子刻蚀工艺对所述第二金属层进行图案化，得到第二金属层部分地覆盖绝缘层的阵列基板。
对第二金属层进行图案化的步骤包括，例如在得到的图案化绝缘层上通过淀积或化学气相沉积金属得到第二金属层。在得到的第二金属层上施加第二光刻胶，并对第二光刻胶进行图案化得到图案化光刻胶层。随后以图案化光刻胶层作为掩膜，以氧离子刻蚀方法例如氧离子等离子体刻蚀或氧离子反应例子刻蚀的方法对第二金属层进行图案化，得到部分覆盖绝缘层的第二金属层及未被第二金属层覆盖的绝缘层的表面302。氧离子与暴露于第二金属层的绝缘层作用在表面形成氧化硅层。
采用含硅光刻胶作为第一金属层与第二金属层之间的绝缘层，一方面将含硅光刻胶用作陈列基板中的结构层，简化了绝缘层的图案化工艺，另一方面，在采用氧离子刻蚀的第二金属层的图案化工艺中，含硅光刻胶与氧离子作用在其表面形成氧化硅层阻挡了氧离子对光刻胶的进一步腐蚀，可以得到结构完整表面平整的绝缘层，提高了产品的性能和质量。
根据本发明的一个示例，形成在第一金属层和第二金属层之间的绝缘层可以不经过图案化工艺，在绝缘层中无需形成过孔。该示例可应用于第二金属层用作遮光层的显示装置中。
显然，本发明的上述实施例仅仅是为清楚地说明本发明所作的举例，而并非是对本发明的实施方式的限定，对于所属领域的普通技术人员来说，在上述说明的基础上还可以做出其它不同形式的变化或变动，这里无法对所有的实施方式予以穷举，凡是属于本发明的技术方案所引伸出的显而易见的变化或变动仍处于本发明的保护范围之列。

Claims (13)

1.一种阵列基板的制作方法，其特征在于，所述方法包括：
在衬底基板上形成第一金属层；
在所述第一金属层上利用含硅有机材料形成绝缘层；
在所述绝缘层上形成第二金属层；以及
采用氧离子刻蚀工艺对所述第二金属层进行图案化，以部分覆盖所述绝缘层；
所述氧离子刻蚀工艺在所述绝缘层未被所述第二金属层覆盖的表面形成氧化硅层。
2.根据权利要求1所述的一种阵列基板的制作方法，其特征在于，在形成所述绝缘层后，对所述绝缘层进行图案化形成过孔。
3.根据权利要求2所述的一种阵列基板的制作方法，其特征在于，所述第二金属层的一部分通过形成在绝缘层中的过孔与所述第一金属层的一部分电连接。
4.根据权利要求1所述的一种阵列基板的制作方法，其特征在于，
所述阵列基板包括TFT阵列；
所述第一金属层包括TFT阵列的源极、漏极、源极线和漏极线。
5.根据权利要求4所述的一种阵列基板的制作方法，其特征在于，所述第二金属层包括像素电极，所述漏极线通过形成在绝缘层中的过孔与像素电极电连接。
6.根据权利要求1所述的一种阵列基板的制作方法，其特征在于，所述第一金属层还包括第一信号线，所述第一信号线通过形成在绝缘层中的过孔与第二金属层电连接。
7.根据权利要求1所述的一种阵列基板的制作方法，其特征在于，所述第一金属层包括触控信号线，所述第二金属层包括触控电极，所述触控信号线通过形成在绝缘层中的过孔与触控电极电连接。
8.根据权利要求1所述的一种阵列基板的制作方法，其特征在于，所述第二金属层包括遮光层。
9.根据权利要求1所述的一种阵列基板的制作方法，其特征在于，所述含硅有机材料为含硅聚酰亚胺或聚二甲基硅氧烷。
10.根据权利要求1所述的一种阵列基板的制作方法，其特征在于，所述氧离子刻蚀工艺为氧等离子体刻蚀或氧反应离子刻蚀。
11.根据权利要求1所述的一种阵列基板的制作方法，其特征在于，所述阵列基板为OLED阵列基板。
12.一种阵列基板，包括
衬底基板，
衬底基板上的第一金属层，
形成在第一金属层上的绝缘层，和
部分地形成在绝缘层上的第二金属层，其特征在于，
所述绝缘层由含硅光刻胶形成，且
所述绝缘层未被所述第二金属层覆盖的表面形成有氧化硅层。
13.一种显示装置，其特征在于，包括如权利要求12所述的阵列基板。
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