CN107924953A - 具有增强的浪涌电流能力的结势垒肖特基二极管 - Google Patents
具有增强的浪涌电流能力的结势垒肖特基二极管 Download PDFInfo
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- CN107924953A CN107924953A CN201680051009.2A CN201680051009A CN107924953A CN 107924953 A CN107924953 A CN 107924953A CN 201680051009 A CN201680051009 A CN 201680051009A CN 107924953 A CN107924953 A CN 107924953A
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- 230000004888 barrier function Effects 0.000 title description 7
- 230000002708 enhancing effect Effects 0.000 title description 2
- 239000004065 semiconductor Substances 0.000 claims abstract description 82
- 230000007704 transition Effects 0.000 claims abstract description 66
- 210000004209 hair Anatomy 0.000 claims description 3
- 239000002019 doping agent Substances 0.000 claims description 2
- 238000000926 separation method Methods 0.000 claims 1
- 230000001965 increasing effect Effects 0.000 abstract description 4
- 230000004048 modification Effects 0.000 description 47
- 238000012986 modification Methods 0.000 description 47
- 235000012431 wafers Nutrition 0.000 description 47
- 239000013078 crystal Substances 0.000 description 33
- 229910010271 silicon carbide Inorganic materials 0.000 description 26
- 239000002184 metal Substances 0.000 description 16
- 229910052751 metal Inorganic materials 0.000 description 16
- 238000002161 passivation Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 230000000903 blocking effect Effects 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000001465 metallisation Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000003550 marker Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000002028 premature Effects 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0688—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions characterised by the particular shape of a junction between semiconductor regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0804—Emitter regions of bipolar transistors
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (19)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP15175299 | 2015-07-03 | ||
EP15175299.5 | 2015-07-03 | ||
EP15188372.5 | 2015-10-05 | ||
EP15188372 | 2015-10-05 | ||
PCT/EP2016/065681 WO2017005684A1 (en) | 2015-07-03 | 2016-07-04 | Junction barrier schottky diode with enhanced surge current capability |
Publications (2)
Publication Number | Publication Date |
---|---|
CN107924953A true CN107924953A (zh) | 2018-04-17 |
CN107924953B CN107924953B (zh) | 2019-09-27 |
Family
ID=56413630
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201680051009.2A Active CN107924953B (zh) | 2015-07-03 | 2016-07-04 | 具有增强的浪涌电流能力的结势垒肖特基二极管 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10164126B2 (zh) |
EP (1) | EP3146569B1 (zh) |
JP (1) | JP6371924B1 (zh) |
CN (1) | CN107924953B (zh) |
WO (1) | WO2017005684A1 (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110534583A (zh) * | 2019-08-01 | 2019-12-03 | 山东天岳电子科技有限公司 | 一种肖特基二极管及其制备方法 |
CN110571281A (zh) * | 2019-08-01 | 2019-12-13 | 山东天岳电子科技有限公司 | 一种混合PiN结肖特基二极管及制造方法 |
CN111682060A (zh) * | 2020-04-20 | 2020-09-18 | 北京天岳京成电子科技有限公司 | 多种元胞设计的复合PiN肖特基二极管 |
TWI804731B (zh) * | 2020-05-26 | 2023-06-11 | 世界先進積體電路股份有限公司 | 半導體裝置 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
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KR102038525B1 (ko) * | 2018-09-27 | 2019-11-26 | 파워큐브세미(주) | Esd 방지 구조를 가진 실리콘카바이드 쇼트키 정션 배리어 다이오드 |
CN110571282B (zh) * | 2019-08-01 | 2023-04-28 | 山东天岳电子科技有限公司 | 一种肖特基二极管及其制造方法 |
US20210328078A1 (en) * | 2020-04-20 | 2021-10-21 | AZ Power, Inc | Merged PiN Schottky (MPS) Diode With Plasma Spreading Layer And Manufacturing Method Thereof |
JP2022043997A (ja) * | 2020-09-04 | 2022-03-16 | エスティーマイクロエレクトロニクス エス.アール.エル. | 信頼性を改善した電子装置の要素の製造方法、及び関連要素、電子装置、及び電子機器 |
CN114284344B (zh) * | 2021-12-23 | 2023-04-28 | 电子科技大学 | 一种优化电流分布的碳化硅结势垒肖特基二极管 |
CN114284343B (zh) * | 2021-12-23 | 2023-04-07 | 电子科技大学 | 一种适用于高温环境的碳化硅结势垒肖特基二极管 |
US11955567B2 (en) | 2022-02-16 | 2024-04-09 | Leap Semiconductor Corp. | Wide-band gap semiconductor device and method of manufacturing the same |
EP4243087A1 (en) * | 2022-03-09 | 2023-09-13 | Nexperia B.V. | Semiconductor product and method for producing a semiconductor product |
CN114664926A (zh) * | 2022-03-30 | 2022-06-24 | 电子科技大学 | 一种功率半导体器件结构 |
Citations (5)
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---|---|---|---|---|
US20040173801A1 (en) * | 2002-12-18 | 2004-09-09 | Infineon Technologies Ag | Schottky diode having overcurrent protection and low reverse current |
CN101783345A (zh) * | 2010-03-04 | 2010-07-21 | 无锡新洁能功率半导体有限公司 | 一种沟槽型半导体整流器及其制造方法 |
CN102084487A (zh) * | 2008-05-21 | 2011-06-01 | 克里公司 | 具有电流浪涌能力的结势垒肖特基二极管 |
CN102376709A (zh) * | 2010-08-17 | 2012-03-14 | 株式会社电装 | 半导体器件 |
US20120223333A1 (en) * | 2011-03-03 | 2012-09-06 | Kabushiki Kaisha Toshiba | Semiconductor rectifier device |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002314098A (ja) * | 2001-04-13 | 2002-10-25 | Sanken Electric Co Ltd | 半導体装置 |
JP5550589B2 (ja) | 2011-03-23 | 2014-07-16 | 株式会社東芝 | 半導体装置 |
WO2013121532A1 (ja) | 2012-02-15 | 2013-08-22 | 富士電機株式会社 | ワイドバンドギャップ半導体装置 |
-
2016
- 2016-07-04 WO PCT/EP2016/065681 patent/WO2017005684A1/en active Application Filing
- 2016-07-04 EP EP16739052.5A patent/EP3146569B1/en active Active
- 2016-07-04 JP JP2017567315A patent/JP6371924B1/ja active Active
- 2016-07-04 CN CN201680051009.2A patent/CN107924953B/zh active Active
-
2018
- 2018-01-03 US US15/861,230 patent/US10164126B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040173801A1 (en) * | 2002-12-18 | 2004-09-09 | Infineon Technologies Ag | Schottky diode having overcurrent protection and low reverse current |
CN102084487A (zh) * | 2008-05-21 | 2011-06-01 | 克里公司 | 具有电流浪涌能力的结势垒肖特基二极管 |
CN101783345A (zh) * | 2010-03-04 | 2010-07-21 | 无锡新洁能功率半导体有限公司 | 一种沟槽型半导体整流器及其制造方法 |
CN102376709A (zh) * | 2010-08-17 | 2012-03-14 | 株式会社电装 | 半导体器件 |
US20120223333A1 (en) * | 2011-03-03 | 2012-09-06 | Kabushiki Kaisha Toshiba | Semiconductor rectifier device |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110534583A (zh) * | 2019-08-01 | 2019-12-03 | 山东天岳电子科技有限公司 | 一种肖特基二极管及其制备方法 |
CN110571281A (zh) * | 2019-08-01 | 2019-12-13 | 山东天岳电子科技有限公司 | 一种混合PiN结肖特基二极管及制造方法 |
CN110534583B (zh) * | 2019-08-01 | 2023-03-28 | 山东天岳电子科技有限公司 | 一种肖特基二极管及其制备方法 |
CN110571281B (zh) * | 2019-08-01 | 2023-04-28 | 山东天岳电子科技有限公司 | 一种混合PiN结肖特基二极管及制造方法 |
CN111682060A (zh) * | 2020-04-20 | 2020-09-18 | 北京天岳京成电子科技有限公司 | 多种元胞设计的复合PiN肖特基二极管 |
CN111682060B (zh) * | 2020-04-20 | 2022-11-29 | 元山(济南)电子科技有限公司 | 多种元胞设计的复合PiN肖特基二极管 |
TWI804731B (zh) * | 2020-05-26 | 2023-06-11 | 世界先進積體電路股份有限公司 | 半導體裝置 |
Also Published As
Publication number | Publication date |
---|---|
JP2018524815A (ja) | 2018-08-30 |
CN107924953B (zh) | 2019-09-27 |
EP3146569A1 (en) | 2017-03-29 |
US20180212071A1 (en) | 2018-07-26 |
WO2017005684A1 (en) | 2017-01-12 |
JP6371924B1 (ja) | 2018-08-08 |
US10164126B2 (en) | 2018-12-25 |
EP3146569B1 (en) | 2018-03-07 |
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