CN107924921B - 基于金属栅极工艺的低成本闪速存储器制造流程 - Google Patents

基于金属栅极工艺的低成本闪速存储器制造流程 Download PDF

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CN107924921B
CN107924921B CN201680045464.1A CN201680045464A CN107924921B CN 107924921 B CN107924921 B CN 107924921B CN 201680045464 A CN201680045464 A CN 201680045464A CN 107924921 B CN107924921 B CN 107924921B
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drain
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CN107924921A (zh
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N·谭
W·田
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Texas Instruments Inc
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Texas Instruments Inc
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CN201680045464.1A 2015-08-05 2016-08-05 基于金属栅极工艺的低成本闪速存储器制造流程 Active CN107924921B (zh)

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US14/819,401 2015-08-05
US14/819,401 US9431253B1 (en) 2015-08-05 2015-08-05 Fabrication flow based on metal gate process for making low cost flash memory
PCT/US2016/045895 WO2017024274A1 (en) 2015-08-05 2016-08-05 Low cost flash memory fabrication flow based on metal gate process

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