CN107884318A - 一种平板颗粒度检测方法 - Google Patents

一种平板颗粒度检测方法 Download PDF

Info

Publication number
CN107884318A
CN107884318A CN201610877673.4A CN201610877673A CN107884318A CN 107884318 A CN107884318 A CN 107884318A CN 201610877673 A CN201610877673 A CN 201610877673A CN 107884318 A CN107884318 A CN 107884318A
Authority
CN
China
Prior art keywords
flat board
illumination field
view
light source
breadth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201610877673.4A
Other languages
English (en)
Other versions
CN107884318B (zh
Inventor
韩雪山
申永强
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Micro Electronics Equipment Co Ltd
Original Assignee
Shanghai Micro Electronics Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to CN201610877673.4A priority Critical patent/CN107884318B/zh
Application filed by Shanghai Micro Electronics Equipment Co Ltd filed Critical Shanghai Micro Electronics Equipment Co Ltd
Priority to EP17854826.9A priority patent/EP3521805A4/en
Priority to US16/338,336 priority patent/US10648926B2/en
Priority to PCT/CN2017/103334 priority patent/WO2018059376A1/zh
Priority to JP2019517049A priority patent/JP7045369B2/ja
Priority to KR1020197010338A priority patent/KR102157044B1/ko
Priority to SG11201902579QA priority patent/SG11201902579QA/en
Priority to TW106133421A priority patent/TWI658263B/zh
Publication of CN107884318A publication Critical patent/CN107884318A/zh
Application granted granted Critical
Publication of CN107884318B publication Critical patent/CN107884318B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/94Investigating contamination, e.g. dust
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501Semiconductor wafers
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N15/00Investigating characteristics of particles; Investigating permeability, pore-volume or surface-area of porous materials
    • G01N15/02Investigating particle size or size distribution
    • G01N15/0205Investigating particle size or size distribution by optical means
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N15/00Investigating characteristics of particles; Investigating permeability, pore-volume or surface-area of porous materials
    • G01N15/02Investigating particle size or size distribution
    • G01N15/0205Investigating particle size or size distribution by optical means
    • G01N15/0227Investigating particle size or size distribution by optical means using imaging; using holography
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/8806Specially adapted optical and illumination features
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03BAPPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B15/00Special procedures for taking photographs; Apparatus therefor
    • G03B15/02Illuminating scene
    • G03B15/03Combinations of cameras with lighting apparatus; Flash units
    • G03B15/05Combinations of cameras with electronic flash apparatus; Electronic flash units
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70616Monitoring the printed patterns
    • G03F7/7065Defects, e.g. optical inspection of patterned layer for defects
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N2021/9513Liquid crystal panels
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84Inspecting

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Dispersion Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)

Abstract

本发明提供了一种平板颗粒度检测方法,该方法主要包括以下步骤:通过光源模块照射待检测平板,产生照明视场;调节照明视场半宽;调节照明视场中心光强和照明视场半宽边缘处光强;接着,调整光源强度、位置以及探测器的位置;通过探测器获取平板异物信号。本发明极大的降低了颗粒镜像以及平板下表面图案串扰,提高信噪比,进而可以提高平板异物检测的准确性。

Description

一种平板颗粒度检测方法
技术领域
本发明涉及颗粒度检测技术,特别涉及一种平板颗粒度检测方法。
背景技术
在半导体集成电路或平板显示的制备工艺中,为提高产品良率,污染控制是一个至关重要的环节。掩模板、硅片或玻璃基板等在进行曝光前,都需要进行异物检测,例如外来颗粒、指纹、划痕、针孔等异物。
一般集成在光刻设备中的颗粒检测装置通常采用暗场散射测量技术,其检测原理如图1所示。辐射光源10发出的光线101被待检测平板40上的异物散射,被散射的信号光102进入探测单元20。但这种检测装置结构会受到颗粒镜像串扰,当检测平板是下表面为铬的掩模时,这种情况尤为严重,同时平板下表面图案30串扰也会严重影响探测信号的信噪比,进而影响检测准确性。
发明内容
本发明为了克服现有的问题,提供了一种平板颗粒度检测方法,极大的降低了颗粒镜像以及平板下表面图案串扰,提高信噪比,进而可以提高检测的准确性。
为实现上述目的,本发明的技术方案如下:
一种平板颗粒度检测方法,主要包括以下步骤:
通过光源模块照射待检测平板,产生照明视场;
调节照明视场半宽;
调节照明视场中心强度和照明视场半宽边缘处的强度;
接着,调整光源模块的光源强度、位置以及探测器的位置;
通过探测器获取平板异物信号。
可选地,所述调节照明视场半宽满足s<=2h*tanθ-0.5w,其中s为照明视场半宽,h为待检平板的厚度,θ为探测接收角度在待测平板中的折射角,w为成像视场的宽度。
可选地,所述调节照明视场中心光强与照明视场半宽边缘处的光强满足i_center/i_edge>(i_min p1/i_max p1_mir)*snr1,所述i_center为照明视场中心光强,i_edge为照明视场半宽边缘处的光强,i_min p1为待检测最小颗粒的接收信号,i_max p1_mir为待检测最大颗粒的镜像串扰信号,snr1为抑制颗粒串扰需要满足的信噪比。
可选地,所述调节照明视场半宽满足s<=h*(tanθ+tanγ),其中s为照明视场半宽,h为待检平板的厚度,θ为探测接收角度在平板中的折射角,γ为入射角度在平板中的折射角。
可选地,所述调节照明视场中心光强与照明视场半宽边缘处的光强满足i_center/i_edge>(i_min p2/i_max p2)*snr2,所述i_center为照明视场中心光源强度,i_edge为照明视场半宽边缘处的光源强度,i_min p2为待检测最小平板图像的接收信号,i_max p2为平板图像串扰的最大信号,snr2为抑制平板图像串扰需要满足的信噪比。
可选地,所述探测单元采用面阵相机、线阵相机或者线阵TDI相机。
可选地,所述光源模块为激光或LED光。
为了达到上述目的,本发明还提出一种平板颗粒度检测方法,通过仿真软件选取光源的入射角和探测器的接收角,并在根据该入射角和接收角,设置光源模块和探测器。
本发明提供了一种平板颗粒度检测方法,通过调节照明视场半宽、照明视场中心光强以及照明视场半宽边缘处光强,来调整光源模块强度、位置以及探测器的位置,极大的降低了颗粒镜像以及平板下表面图案串扰,提高信噪比,进而可以提高平板异物检测的准确性。
附图说明
图1为现有技术平板异物检测系统结构示意图;
图2为本发明实施例异物检测系统结构示意图;
图3为本发明实施例抑制颗粒镜像串扰示意图;
图4为本发明实施例抑制平板图像串扰示意图。
具体实施方式
为使本发明的目的、技术方案更加清楚明白,以下结合附图和具体实施例对本发明的方法作进一步详细说明。
如图2至图4所示,本发明提供一种平板颗粒度检测方法,包括:
通过光源模块10照射待检测平板40,产生照明视场101。具体地,将光源模块10放置于待测平板40上方,光源模块10照射待检测平板40,产生照明视场101,并且形成入射角α。将探测单元20放置于待检测平板40上方光源模块10相对位置,形成探测接收角度β。探测单元20可以采用面阵相机、线阵相机或者线阵TDI相机,本实施例优选探测单元20为CCD相机。光源模块10为激光或LED光,本实施例优选光源模块10为LED灯。
接着,调节可以抑制颗粒镜像串扰的照明视场半宽,具体地,根据抑制颗粒镜像串扰需要满足照明视场半宽s<=2h*tanθ-0.5w,其中h为待检平板的厚度,θ为探测接收角度在平板中的折射角,w为成像视场的宽度。
接着,调节可以抑制颗粒镜像串扰的照明视场中心光强与照明视场半宽边缘处的光强,具体地,照明视场中心光强与照明视场半宽边缘处的光强满足i_center/i_edge>(i_min p1/i_max p1_mir)*snr1,其中i_center为照明视场中心光强,i_edge为抑制颗粒串扰的照明视场半宽边缘处的光强,i_min p1为待检测最小颗粒的接收信号,i_max p1_mir为待检测最大颗粒的镜像串扰信号,snr1为抑制颗粒串扰需要满足的信噪比。
调节抑制平板图像串扰的照明视场半宽,具体地,根据抑制平板图像串扰需要满足照明视场半宽s<=h*(tanθ+tanγ),其中h为待检平板的厚度,θ为探测接收角度在平板中的折射角,γ为入射角度在平板中的折射角。
调节抑制平板图像串扰的照明视场中心光强与照明视场半宽边缘处的光强,具体地,照明视场中心光强与照明视场半宽边缘处的光强满足i_center/i_edge>(i_min p2/i_max p2)*snr2,其中所述i_center为照明视场中心光源强度,i_edge为抑制图像串扰的照明视场半宽边缘处的光源强度,i_min p2为待检测最小图像的接收信号,i_max p2为平板图像串扰的最大信号,snr2为抑制平板图像串扰需要满足的信噪比。
接着,调整光源模块的光源强度、位置以及探测器的位置;
通过探测器获取平板异物信号。
下面通过一组数据来说明本发明的平板颗粒度检测方法:检测颗粒p1动态范围为5-1000μm,平板图像间距范围为80nm-1μm,成像视场宽度w为1mm,平板折射率1.46,平板厚度h为3mm,光源入射角度α为75°-80°,探测装置接收角度β为55°-60°,抑制颗粒串扰需要满足的信噪比为5,抑制平板图像串扰需要满足的信噪比为2。
由上可知:
抑制颗粒镜像串扰和平板图像串扰需要同时满足:照明视场宽度7.5mm处光强需小于照明视场中心光强的1/2000;照明视场宽度8.8mm处光强需小于照明视场中心光强的1/5000。
上述描述仅是对本发明较佳实施例的描述,并非对本发明范围的任何限定,本发明领域的普通技术人员根据上述揭示内容做的任何变更、修饰,均属于权利要求书的保护范围。

Claims (8)

1.一种平板颗粒度检测方法,其特征在于,包括以下步骤:
通过光源模块照射待检测平板,产生照明视场;
调节照明视场半宽;
调节照明视场中心光强和照明视场半宽边缘处光强;
接着,调整光源模块的光源强度、位置以及探测器的位置;
通过探测器获取平板异物信号。
2.根据权利要求1所述的一种平板颗粒度检测方法,其特征在于,所述调节照明视场半宽满足s<=2h*tanθ-0.5w,其中s为照明视场半宽,h为待检平板的厚度,θ为探测接收角度在待测平板中的折射角,w为成像视场的宽度。
3.根据权利要求1或2所述的一种平板颗粒度检测方法,其特征在于,所述调节照明视场中心光强与照明视场半宽边缘处的光强满足i_center/i_edge>(i_min p1/i_max p1_mir)*snr1,所述i_center为照明视场中心光强,i_edge为照明视场半宽边缘处的光强,i_min p1为待检测最小颗粒的接收信号,i_max p1_mir为待检测最大颗粒的镜像串扰信号,snr1为抑制颗粒串扰需要满足的信噪比。
4.根据权利要求1所述的一种平板颗粒度检测方法,其特征在于,所述调节照明视场半宽满足s<=h*(tanθ+tanγ),其中s为照明视场半宽,h为待检平板的厚度,θ为探测接收角度在平板中的折射角,γ为入射角度在平板中的折射角。
5.根据权利要求1或4所述的一种平板颗粒度检测方法,其特征在于,所述调节照明视场中心光强与照明视场半宽边缘处的光强满足i_center/i_edge>(i_min p2/i_max p2)*snr2,所述i_center为照明视场中心光源强度,i_edge为照明视场半宽边缘处的光源强度,i_min p2为待检测最小平板图像的接收信号,i_max p2为平板图像串扰的最大信号,snr2为抑制平板图像串扰需要满足的信噪比。
6.根据权利要求1所述的一种平板颗粒度检测方法,其特征在于,所述探测单元采用面阵相机、线阵相机或者线阵TDI相机。
7.根据权利要求1所述的一种平板颗粒度检测方法,其特征在于,所述光源模块为激光或LED光。
8.一种平板颗粒度检测方法,其特征在于,包括如下步骤:通过仿真软件选取光源的入射角和探测器的接收角,并根据该入射角和接收角,设置光源模块和探测器。
CN201610877673.4A 2016-09-30 2016-09-30 一种平板颗粒度检测方法 Active CN107884318B (zh)

Priority Applications (8)

Application Number Priority Date Filing Date Title
CN201610877673.4A CN107884318B (zh) 2016-09-30 2016-09-30 一种平板颗粒度检测方法
US16/338,336 US10648926B2 (en) 2016-09-30 2017-09-26 Method of detecting particles on panel
PCT/CN2017/103334 WO2018059376A1 (zh) 2016-09-30 2017-09-26 一种平板颗粒度检测方法
JP2019517049A JP7045369B2 (ja) 2016-09-30 2017-09-26 フラットパネルの粒度検出方法
EP17854826.9A EP3521805A4 (en) 2016-09-30 2017-09-26 METHOD FOR DETECTING PARTICLES ON A PLATE
KR1020197010338A KR102157044B1 (ko) 2016-09-30 2017-09-26 패널에서 파티클을 검출하는 방법
SG11201902579QA SG11201902579QA (en) 2016-09-30 2017-09-26 Method of detecting particles on panel
TW106133421A TWI658263B (zh) 2016-09-30 2017-09-28 一種平板顆粒度檢測方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610877673.4A CN107884318B (zh) 2016-09-30 2016-09-30 一种平板颗粒度检测方法

Publications (2)

Publication Number Publication Date
CN107884318A true CN107884318A (zh) 2018-04-06
CN107884318B CN107884318B (zh) 2020-04-10

Family

ID=61763132

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610877673.4A Active CN107884318B (zh) 2016-09-30 2016-09-30 一种平板颗粒度检测方法

Country Status (8)

Country Link
US (1) US10648926B2 (zh)
EP (1) EP3521805A4 (zh)
JP (1) JP7045369B2 (zh)
KR (1) KR102157044B1 (zh)
CN (1) CN107884318B (zh)
SG (1) SG11201902579QA (zh)
TW (1) TWI658263B (zh)
WO (1) WO2018059376A1 (zh)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020001633A1 (zh) * 2018-06-29 2020-01-02 上海微电子装备(集团)股份有限公司 一种缺陷检测装置及缺陷检测方法
CN111351794A (zh) * 2018-12-20 2020-06-30 上海微电子装备(集团)股份有限公司 一种物体表面检测装置及检测方法
CN112540082A (zh) * 2019-09-20 2021-03-23 深圳中科飞测科技股份有限公司 检测系统及检测方法
CN113406086A (zh) * 2020-03-16 2021-09-17 上海微电子装备(集团)股份有限公司 检测装置及光刻设备

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11733605B2 (en) * 2019-06-20 2023-08-22 Kla Corporation EUV in-situ linearity calibration for TDI image sensors using test photomasks

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5978078A (en) * 1996-12-17 1999-11-02 Texas Instruments Incorporated System and method for detecting particles on substrate-supporting chucks of photolithography equipment
CN1662808A (zh) * 2002-05-06 2005-08-31 应用材料股份有限公司 用于检测不透明膜层埋覆缺陷的光学技术
CN101021490A (zh) * 2007-03-12 2007-08-22 3i系统公司 平面基板自动检测系统及方法
CN101339143A (zh) * 2007-07-06 2009-01-07 奥林巴斯株式会社 基板外观检查装置
CN102519968A (zh) * 2011-11-28 2012-06-27 上海华力微电子有限公司 掩膜板缺陷检测装置
CN102768969A (zh) * 2012-07-03 2012-11-07 上海华力微电子有限公司 一种亮场缺陷扫描中的光斑抑制方法
CN104897693A (zh) * 2015-06-12 2015-09-09 武汉中导光电设备有限公司 一种玻璃表面缺陷增强装置及其检测方法
CN106257998A (zh) * 2013-12-23 2016-12-28 皇家飞利浦有限公司 用于检测颗粒的检测装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3300830B2 (ja) * 1995-07-12 2002-07-08 株式会社日立製作所 異物等の欠陥検査方法及びその装置
JP2000223541A (ja) * 1999-01-27 2000-08-11 Hitachi Ltd 欠陥検査装置およびその方法
US6760100B2 (en) 2001-03-12 2004-07-06 Ade Corporation Method and apparatus for classifying defects occurring at or near a surface of a smooth substrate
JP4234945B2 (ja) 2002-05-01 2009-03-04 株式会社トプコン 表面検査方法および表面検査装置
US7349082B2 (en) * 2004-10-05 2008-03-25 Asml Netherlands B.V. Particle detection device, lithographic apparatus and device manufacturing method
JP4988223B2 (ja) * 2005-06-22 2012-08-01 株式会社日立ハイテクノロジーズ 欠陥検査装置およびその方法
US7567344B2 (en) * 2006-05-12 2009-07-28 Corning Incorporated Apparatus and method for characterizing defects in a transparent substrate
US7715000B2 (en) * 2006-08-17 2010-05-11 Asml Netherlands B.V. Particle detection system, and lithographic apparatus provided with such particle detection system
KR100958204B1 (ko) 2008-08-21 2010-05-14 티에스씨멤시스(주) 평판디스플레이 패널 검사 장비 및 방법
US8624971B2 (en) 2009-01-23 2014-01-07 Kla-Tencor Corporation TDI sensor modules with localized driving and signal processing circuitry for high speed inspection
JP5213765B2 (ja) 2009-03-06 2013-06-19 株式会社日立ハイテクノロジーズ 表面検査装置及び表面検査方法
US7929129B2 (en) 2009-05-22 2011-04-19 Corning Incorporated Inspection systems for glass sheets
KR101177299B1 (ko) 2010-01-29 2012-08-30 삼성코닝정밀소재 주식회사 평판 유리 표면 이물질 검사 장치
JP5520737B2 (ja) 2010-07-30 2014-06-11 株式会社日立ハイテクノロジーズ 欠陥検査装置および欠陥検査方法
JP5686139B2 (ja) * 2010-12-09 2015-03-18 旭硝子株式会社 液晶表示パネル用ガラス基板の製造方法
US8643833B1 (en) 2012-08-31 2014-02-04 National Applied Research Laboratories System for inspecting surface defects of a specimen and a method thereof
CN105372256B (zh) 2014-08-20 2019-01-18 上海微电子装备(集团)股份有限公司 表面检测系统及方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5978078A (en) * 1996-12-17 1999-11-02 Texas Instruments Incorporated System and method for detecting particles on substrate-supporting chucks of photolithography equipment
CN1662808A (zh) * 2002-05-06 2005-08-31 应用材料股份有限公司 用于检测不透明膜层埋覆缺陷的光学技术
CN101021490A (zh) * 2007-03-12 2007-08-22 3i系统公司 平面基板自动检测系统及方法
CN101339143A (zh) * 2007-07-06 2009-01-07 奥林巴斯株式会社 基板外观检查装置
CN102519968A (zh) * 2011-11-28 2012-06-27 上海华力微电子有限公司 掩膜板缺陷检测装置
CN102768969A (zh) * 2012-07-03 2012-11-07 上海华力微电子有限公司 一种亮场缺陷扫描中的光斑抑制方法
CN106257998A (zh) * 2013-12-23 2016-12-28 皇家飞利浦有限公司 用于检测颗粒的检测装置
CN104897693A (zh) * 2015-06-12 2015-09-09 武汉中导光电设备有限公司 一种玻璃表面缺陷增强装置及其检测方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020001633A1 (zh) * 2018-06-29 2020-01-02 上海微电子装备(集团)股份有限公司 一种缺陷检测装置及缺陷检测方法
CN110658196A (zh) * 2018-06-29 2020-01-07 上海微电子装备(集团)股份有限公司 一种缺陷检测装置及缺陷检测方法
TWI728386B (zh) * 2018-06-29 2021-05-21 大陸商上海微電子裝備(集團)股份有限公司 缺陷檢測裝置及缺陷檢測方法
CN110658196B (zh) * 2018-06-29 2022-07-08 上海微电子装备(集团)股份有限公司 一种缺陷检测装置及缺陷检测方法
CN111351794A (zh) * 2018-12-20 2020-06-30 上海微电子装备(集团)股份有限公司 一种物体表面检测装置及检测方法
CN111351794B (zh) * 2018-12-20 2021-12-10 上海微电子装备(集团)股份有限公司 一种物体表面检测装置及检测方法
CN112540082A (zh) * 2019-09-20 2021-03-23 深圳中科飞测科技股份有限公司 检测系统及检测方法
CN113406086A (zh) * 2020-03-16 2021-09-17 上海微电子装备(集团)股份有限公司 检测装置及光刻设备

Also Published As

Publication number Publication date
TWI658263B (zh) 2019-05-01
US10648926B2 (en) 2020-05-12
SG11201902579QA (en) 2019-05-30
JP7045369B2 (ja) 2022-03-31
CN107884318B (zh) 2020-04-10
KR102157044B1 (ko) 2020-09-17
JP2019529925A (ja) 2019-10-17
EP3521805A4 (en) 2019-11-06
US20200025691A1 (en) 2020-01-23
EP3521805A1 (en) 2019-08-07
KR20190051031A (ko) 2019-05-14
TW201814275A (zh) 2018-04-16
WO2018059376A1 (zh) 2018-04-05

Similar Documents

Publication Publication Date Title
CN107884318A (zh) 一种平板颗粒度检测方法
EP2198279B1 (en) Apparatus and method for detecting semiconductor substrate anomalies
KR101300132B1 (ko) 평판 유리 이물질 검사 장치 및 검사 방법
JP2010008177A (ja) 欠陥検出装置及び方法
JP2003151483A5 (zh)
US20120287263A1 (en) Infrared inspection of bonded substrates
TWI689721B (zh) 基於利用光學技術掃描透明板材表面污染之方法及其系統
TWI673491B (zh) 光箱結構及應用彼光學檢測設備
TW201209391A (en) An apparatus and method for inspecting inner defect of substrate
CN104065851B (zh) 一种用于电子助视器的led抗眩光方法
CN108507909A (zh) 一种平板颗粒度检测装置
CN210690434U (zh) 一种电路板通孔缺陷终检设备
US20200333258A1 (en) Methods and apparatus for detecting surface defects on glass sheets
US9933370B2 (en) Inspection apparatus
JP2015132625A (ja) 異物検査装置、異物検査方法
JP6212843B2 (ja) 異物検査装置、異物検査方法
TWM548268U (zh) 光箱結構及應用彼光學檢測設備
KR102346827B1 (ko) 컬러 광학 검사 장치 및 이를 포함하는 시스템
JP2007155468A (ja) 欠点検査方法および欠点検査装置
KR102620600B1 (ko) 물체 표면 검출 장치 및 검출 방법
JP6119785B2 (ja) 異物検査装置、異物検査方法
KR20210036091A (ko) 자외선을 이용한 투명기판 상면 이물 검출 장치
JPH0620934A (ja) レジスト塗膜の異物検査方法及び装置
CN107976422A (zh) 用于平板双面异物检测的装置和光刻机
JP2014052217A (ja) 異物検査装置、異物検査方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant