CN107851650B - 摄像装置及其制造方法 - Google Patents

摄像装置及其制造方法 Download PDF

Info

Publication number
CN107851650B
CN107851650B CN201680041490.7A CN201680041490A CN107851650B CN 107851650 B CN107851650 B CN 107851650B CN 201680041490 A CN201680041490 A CN 201680041490A CN 107851650 B CN107851650 B CN 107851650B
Authority
CN
China
Prior art keywords
compound semiconductor
light receiving
semiconductor layer
layer
receiving element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201680041490.7A
Other languages
English (en)
Chinese (zh)
Other versions
CN107851650A (zh
Inventor
内田史朗
本庄亮子
渡边知雅
阿部秀司
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Semiconductor Solutions Corp
Original Assignee
Sony Semiconductor Solutions Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Publication of CN107851650A publication Critical patent/CN107851650A/zh
Application granted granted Critical
Publication of CN107851650B publication Critical patent/CN107851650B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/288—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being sensitive to multiple wavelengths, e.g. multi-spectrum radiation detection devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/021—Manufacture or treatment of image sensors covered by group H10F39/12 of image sensors having active layers comprising only Group III-V materials, e.g. GaAs, AlGaAs or InP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
CN201680041490.7A 2015-07-22 2016-05-06 摄像装置及其制造方法 Active CN107851650B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2015144594A JP6530664B2 (ja) 2015-07-22 2015-07-22 撮像装置及びその製造方法
JP2015-144594 2015-07-22
PCT/JP2016/063675 WO2017013924A1 (ja) 2015-07-22 2016-05-06 撮像装置及びその製造方法

Publications (2)

Publication Number Publication Date
CN107851650A CN107851650A (zh) 2018-03-27
CN107851650B true CN107851650B (zh) 2022-02-18

Family

ID=57834048

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201680041490.7A Active CN107851650B (zh) 2015-07-22 2016-05-06 摄像装置及其制造方法

Country Status (4)

Country Link
US (3) US10304884B2 (enExample)
JP (1) JP6530664B2 (enExample)
CN (1) CN107851650B (enExample)
WO (1) WO2017013924A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110546766B (zh) 2017-05-15 2023-11-14 索尼半导体解决方案公司 光电转换器件和摄像器件
EP3671840A4 (en) * 2017-08-16 2020-08-19 Sony Corporation IMAGING ELEMENT, LAYERING IMAGING ELEMENT AND SEMICONDUCTOR IMAGING DEVICE
WO2019111919A1 (ja) * 2017-12-06 2019-06-13 凸版印刷株式会社 固体撮像素子およびその製造方法
WO2019146299A1 (ja) * 2018-01-23 2019-08-01 ソニーセミコンダクタソリューションズ株式会社 撮像装置
JP7196177B2 (ja) * 2018-07-20 2022-12-26 富士フイルム株式会社 処理液および処理方法
WO2020059495A1 (ja) * 2018-09-19 2020-03-26 ソニーセミコンダクタソリューションズ株式会社 撮像素子、半導体素子および電子機器
US12074178B2 (en) 2018-12-28 2024-08-27 Sony Semiconductor Solutions Corporation Imaging device and electronic apparatus
JP2022115678A (ja) * 2021-01-28 2022-08-09 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び電子機器
JP2024069731A (ja) * 2021-03-17 2024-05-22 ソニーセミコンダクタソリューションズ株式会社 光電変換素子及び撮像装置
CN114497244B (zh) * 2022-01-21 2023-02-24 中山德华芯片技术有限公司 一种红外探测器芯片及其制作方法与应用
CN114664974B (zh) * 2022-02-15 2023-10-27 中国电子科技集团公司第十一研究所 红外焦平面器件芯片及制备方法、读出电路及其制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101174582A (zh) * 2006-11-03 2008-05-07 力晶半导体股份有限公司 图像传感器结构及其制造方法
CN101345213A (zh) * 2007-07-10 2009-01-14 力晶半导体股份有限公司 影像传感器结构及其制造方法
JP2015126122A (ja) * 2013-12-26 2015-07-06 住友電気工業株式会社 受光装置の製造方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6459968A (en) * 1987-08-31 1989-03-07 Fujitsu Ltd Optical wavelength discriminating quantum well photodetector
JPH0258878A (ja) * 1988-08-25 1990-02-28 Nec Corp 半導体受光素子アレイ
JPH06326118A (ja) * 1993-05-11 1994-11-25 Nippon Telegr & Teleph Corp <Ntt> 化合物半導体装置の製造方法
JP2001144278A (ja) * 1999-11-12 2001-05-25 Nippon Sheet Glass Co Ltd 受光素子アレイ
JP2003007840A (ja) 2001-06-25 2003-01-10 Nec Corp 半導体装置及び半導体装置製造方法
US7671385B2 (en) * 2007-03-15 2010-03-02 Powerchip Semiconductor Corp. Image sensor and fabrication method thereof
US7863647B1 (en) * 2007-03-19 2011-01-04 Northrop Grumman Systems Corporation SiC avalanche photodiode with improved edge termination
JP2011151271A (ja) * 2010-01-22 2011-08-04 Rohm Co Ltd 光電変換装置およびその製造方法、および固体撮像装置
JP5536488B2 (ja) * 2010-02-22 2014-07-02 ローム株式会社 カラー用固体撮像装置
JP5585232B2 (ja) * 2010-06-18 2014-09-10 ソニー株式会社 固体撮像装置、電子機器
JP5486542B2 (ja) * 2011-03-31 2014-05-07 浜松ホトニクス株式会社 フォトダイオードアレイモジュール及びその製造方法
JP2012216727A (ja) * 2011-04-01 2012-11-08 Sumitomo Electric Ind Ltd 受光素子、その製造方法および検出装置
US10115764B2 (en) * 2011-08-15 2018-10-30 Raytheon Company Multi-band position sensitive imaging arrays
JP2014041867A (ja) * 2012-08-21 2014-03-06 Toshiba Corp 固体撮像装置および固体撮像装置の製造方法
JP6186205B2 (ja) * 2013-08-15 2017-08-23 ソニーセミコンダクタソリューションズ株式会社 撮像素子および撮像装置
US9064989B2 (en) * 2013-08-30 2015-06-23 Taiwan Semiconductor Manufacturing Company Limited Photo diode and method of forming the same
JP6295693B2 (ja) * 2014-02-07 2018-03-20 ソニー株式会社 撮像装置
JP6428091B2 (ja) * 2014-09-24 2018-11-28 住友電気工業株式会社 赤外線イメージセンサ
JP6477211B2 (ja) * 2015-04-30 2019-03-06 富士通株式会社 イメージセンサ及びその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101174582A (zh) * 2006-11-03 2008-05-07 力晶半导体股份有限公司 图像传感器结构及其制造方法
CN101345213A (zh) * 2007-07-10 2009-01-14 力晶半导体股份有限公司 影像传感器结构及其制造方法
JP2015126122A (ja) * 2013-12-26 2015-07-06 住友電気工業株式会社 受光装置の製造方法

Also Published As

Publication number Publication date
US20190252437A1 (en) 2019-08-15
JP6530664B2 (ja) 2019-06-12
CN107851650A (zh) 2018-03-27
US20180219039A1 (en) 2018-08-02
JP2017028078A (ja) 2017-02-02
WO2017013924A1 (ja) 2017-01-26
US10304884B2 (en) 2019-05-28
US20200365637A1 (en) 2020-11-19
US11239271B2 (en) 2022-02-01
US10741595B2 (en) 2020-08-11

Similar Documents

Publication Publication Date Title
CN107851650B (zh) 摄像装置及其制造方法
US12027565B2 (en) Imaging device having charge storage electrode, first electrode, second electrode and transfer control electrode, driving method for imaging device having the same, and electronic apparatus
US11296245B2 (en) Image capturing apparatus including a compound semiconductor layer
JP7586230B2 (ja) 撮像素子、積層型撮像素子及び撮像装置
US8466452B2 (en) Color unit and imaging device having the same
TW201834227A (zh) 成像元件，堆疊式成像元件及固態成像裝置
CN206992154U (zh) 成像元件和电子设备
TW201843823A (zh) 攝像元件、積層型攝像元件及固體攝像裝置
CN111095559A (zh) 摄像元件、堆叠型摄像元件和固态摄像装置
WO2017154444A1 (ja) 光電変換素子及び撮像装置
JP2018182021A (ja) 撮像素子、積層型撮像素子及び固体撮像装置
JP6642599B2 (ja) 受光素子、撮像素子及び撮像装置

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant