CN107851626A - 元件模块和功率模块 - Google Patents
元件模块和功率模块 Download PDFInfo
- Publication number
- CN107851626A CN107851626A CN201680045964.5A CN201680045964A CN107851626A CN 107851626 A CN107851626 A CN 107851626A CN 201680045964 A CN201680045964 A CN 201680045964A CN 107851626 A CN107851626 A CN 107851626A
- Authority
- CN
- China
- Prior art keywords
- contact
- component module
- perforate
- power model
- component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/427—Cooling by change of state, e.g. use of heat pipes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3733—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh, porous structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/467—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing gases, e.g. air
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L24/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L24/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04026—Bonding areas specifically adapted for layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04034—Bonding areas specifically adapted for strap connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05624—Aluminium [Al] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05639—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05644—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/1354—Coating
- H01L2224/13599—Material
- H01L2224/13698—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/13798—Fillers
- H01L2224/13899—Coating material
- H01L2224/139—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13938—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13939—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
- H01L2224/292—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29201—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/29211—Tin [Sn] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
- H01L2224/292—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29217—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/29224—Aluminium [Al] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
- H01L2224/292—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29238—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29239—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
- H01L2224/292—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29238—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29244—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
- H01L2224/292—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29238—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29247—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
- H01L2224/292—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29238—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29255—Nickel [Ni] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
- H01L2224/292—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29263—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/29266—Titanium [Ti] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
- H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/29398—Base material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
- H01L2224/37001—Core members of the connector
- H01L2224/37099—Material
- H01L2224/37198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/37199—Material of the matrix
- H01L2224/372—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/37201—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/37211—Tin [Sn] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
- H01L2224/37001—Core members of the connector
- H01L2224/37099—Material
- H01L2224/37198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/37199—Material of the matrix
- H01L2224/372—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/37217—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/37224—Aluminium [Al] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
- H01L2224/37001—Core members of the connector
- H01L2224/37099—Material
- H01L2224/37198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/37199—Material of the matrix
- H01L2224/372—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/37238—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/37239—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
- H01L2224/37001—Core members of the connector
- H01L2224/37099—Material
- H01L2224/37198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/37199—Material of the matrix
- H01L2224/372—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/37238—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/37244—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
- H01L2224/37001—Core members of the connector
- H01L2224/37099—Material
- H01L2224/37198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/37199—Material of the matrix
- H01L2224/372—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/37238—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/37247—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
- H01L2224/37001—Core members of the connector
- H01L2224/37099—Material
- H01L2224/37198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/37199—Material of the matrix
- H01L2224/372—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/37238—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/37255—Nickel [Ni] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
- H01L2224/37001—Core members of the connector
- H01L2224/37099—Material
- H01L2224/37198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/37199—Material of the matrix
- H01L2224/372—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/37263—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/37266—Titanium [Ti] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
- H01L2224/37001—Core members of the connector
- H01L2224/37099—Material
- H01L2224/37198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/37199—Material of the matrix
- H01L2224/3729—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
- H01L2224/37001—Core members of the connector
- H01L2224/37099—Material
- H01L2224/37198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/37298—Fillers
- H01L2224/37299—Base material
- H01L2224/37395—Base material with a principal constituent of the material being a gas not provided for in groups H01L2224/373 - H01L2224/37391
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/832—Applying energy for connecting
- H01L2224/83201—Compression bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8334—Bonding interfaces of the layer connector
- H01L2224/83345—Shape, e.g. interlocking features
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
- H01L2224/8382—Diffusion bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8384—Sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
- H01L2224/8434—Bonding interfaces of the connector
- H01L2224/84345—Shape, e.g. interlocking features
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
- H01L2224/848—Bonding techniques
- H01L2224/84801—Soldering or alloying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
- H01L2224/848—Bonding techniques
- H01L2224/84801—Soldering or alloying
- H01L2224/8482—Diffusion bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
- H01L2224/848—Bonding techniques
- H01L2224/8484—Sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
- H01L2224/848—Bonding techniques
- H01L2224/8485—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
Abstract
元件模块具有元件,该元件具有至少一个电气的接触部,其中至少一个接触部连接至少一个开孔的接触件,其中元件模块具有用于用冷却液进行冷却的冷却系统,冷却系统包括一个或多个冷却通道,冷却通道借助于开孔的接触件的孔来构成。功率模块包括这种元件模块。
Description
技术领域
本发明涉及元件模块和功率模块。
背景技术
在电子设备、尤其是功率电子设备中,半导体器件、尤其是IGBT、二极管、MOSFET等等中的电流的接通和引导引起损耗功率。这种损耗功率必须由冷却器承担,使得这种半导体器件并不加热并且确保有效的运行。已知在下侧通过无缩孔的焊接、扩散焊接或烧结来将功率器件施加到基板(DCB、AMB等)上,其中基板从它而言平面地连接到冷却器上。然而,在此冷却常常并不有效。这些功率器件的由此引起的加热常常导致功率器件的提高的故障率以及由于热降解引起的绝缘材料的过早失效。在上侧,功率器件的冷却通常是特别困难的,因为基于经常使用的打线接合或者细带接合技术来为了电绝缘而浇铸材料,该材料妨碍热能量排出。
发明内容
因此,本发明的任务在于,说明一种元件模块以及功率模块,其中改善了器件的冷却。
本发明的任务通过具有权利要求1中说明的特征的元件模块以及具有权利要求9中说明的特征的功率模块得以解决。本发明的优选的改进方案从附属的从属权利要求、后面的描述和附图中得出。
根据本发明的元件模块具有带有至少一个电气的接触部的元件。在根据本发明的元件模块中,在至少一个接触部上连接至少一个开孔的用于电接触的接触件。此外,根据本发明的元件模块具有用于以冷却液对元件进行冷却的冷却系统。冷却系统包括一个或多个借助开孔的接触件的孔形成的冷却通道。
根据本发明,开孔的接触件在此因此不仅用于电接触,而是接触件也实现与冷却液的热接触。以这种方式可以直接在元件上进行散热,使得散热特别地有效。尤其是,散热不必经由多个层来进行,使得这些层的导热能力不会对可能的散热进行限制。相反,在根据本发明的元件模块的情况下以任意空间上接近于元件的方式借助冷却液来进行散热。由于有效的散热,明显提高元件模块的故障安全性以及必要时存在的绝缘材料的稳定性。
以适宜的方式,在根据本发明的元件模块情况下,接触件以电镀的方式和/或借助于烧结和/或借助于焊接和/或借助于扩散焊接和/或借助于挤压和/或借助于夹紧和/或借助于粘合连接到元件的至少一个接触部上。利用所提到的方法通过根据本发明的元件模块情况下的接触件同时保证特别良好的电接触以及用于散热的特别良好的热接触。有利地,在根据本发明的元件模块情况下,元件是集成电路。恰恰在集成电路的情况下,有效的散热是特别运行重要的。恰恰在本发明的这种改进方案中,因此根据本发明的可能的有效的散热是特别有利的。在根据本发明的元件模块的适宜的改进方案中,元件模块具有至少两个或更多元件,这些元件分别借助开孔的接触件连接到共同的电路板上。有利地,在本发明的这种改进方案中热量局部地在每个元件处直接排出,这明显提高元件模块的故障安全性。
以合适的方式在根据本发明的元件模块情况下,至少一个开孔的接触件由金属或者以金属,特别是镍和/或银和/或金和/或锌和/或铜构成,适宜地以海绵金属,特别是海绵铜的形式被构成。在根据本发明的元件模块的这种改进方案中,开孔的接触件以特别简单的方式导电地构造为电气的接触件。同时,提到的材料允许了开孔的构造。
优选地在根据本发明的元件模块中,至少一个开孔的接触件以织物状的和/或泡沫状的和/或网状的结构、特别是以金属网的形式构成的结构来构成。可替代地或附加地,开孔的接触件可以以导体框架堆叠的形式来构成。在这种改进方案中能够容易地保证接触件的开孔性。
以适宜的方式,“开孔的”在本申请的意义上应理解为,接触件的孔在其表面上形成入口,液体、例如冷却液能够从外部穿过该入口渗入到接触件中。理想地,接触件的开孔的材料此外具有开孔的结构,冷却液能够通过该结构有效地经过,优选这样地经过,使得冷却液流经该接触件。
以适宜的方式在根据本发明的元件模块情况下,根据本发明设置的开孔的接触件特别适用于引导冷却流体、特别是冷却流体通过其孔。
理想地在根据本发明的元件模块情况下,冷却系统包括热管。通过该热管实现特别有效的冷却循环。
根据本发明的功率模块如之前所描述地那样包括根据本发明的元件模块。优选地,在根据本发明的功率模块情况下,至少一个元件是功率元件。恰恰在功率模块的情况下,有效散热的问题更严重,因为在此存在特别大量的用于转换成热能的能量。在根据本发明的功率模块情况下,因此在根据本发明的元件模块情况下可能的有效散热是很大的优势。
附图说明
接下来根据附图中所示的实施例来进一步阐述本发明。其中:
图1 示意性地以纵剖面示出具有根据本发明的元件模块的根据本发明的功率模块的第一实施例,该元件模块具有借助于元件模块的开孔的接触件所实现的冷却系统;
图2 示意性地以纵剖面示出具有根据本发明的元件模块的根据本发明的功率模块的第二实施例,该元件模块具有借助于元件模块的开孔的接触件所构成的热管;以及
图3以纵剖面中的原理图示出根据图1和2的实施例的开孔的接触件的连接的细节。
具体实施方式
图1中所示出的功率元件10是具有绝缘的门电极的双极型晶体管(英文:Insulated Gate Bipolar Transistor(绝缘栅双极型晶体管):IGBT)并且具有第一平坦侧面20和第二平坦侧面30,其互相背离。功率元件10的薄层状的平面接触部40、50沿着第一平坦侧面20和第二平坦侧面30延伸,平面接触部被构造为平面的芯片敷金属。在所示的实施例中,图1中的功率元件的在上侧布置的平面接触部40由铜组成,而功率元件的在下侧布置的平面接触部50由银组成。原则上,上侧的平面接触部40也可以由银或以银或者由AlSiCu或以AlSiCu、其他金属或其他导电材料构成,而下侧的平面接触部50也可以由金或以金和/或其他金属或者其他导电材料构成。
为了这些平面接触部40、50的接触,在紧贴平面接触部40、50的接触件60、70上放置开孔的材料,该材料基本上平面地沿着平面接触部40、50延伸。在所示实施例中,接触件60、70被构造为能传导的并且实现为海绵铜。理解为,在没有特意示出的另外对应于根据附图所阐述的实施例的其他实施例中,开孔的接触件60、70也可以由其他的开孔的能传导的材料组成,例如由织物或网或其他的多孔的结构所构成的铝或者钛接触件或者由其他金属或以其他金属所构成的接触件。例如,也可以将用能传导的材料局部地覆层的或者用能传导的颗粒所渗入的海绵聚合物用作接触件。在另外对应于所示实施例的其他实施例中,可以以导体框架的堆叠构成开孔的接触件。
功率元件10的平面接触部50之一面向具有由氮化铝(AlN)组成的陶瓷芯100的陶瓷基板90的另一平面接触部80。原则上,在其他的、没有特意示出的实施例中,陶瓷芯100基本上可以由其他材料、例如另一种陶瓷材料或者聚合物,例如PCB或FR4组成。陶瓷基板90的另一平面接触部80被构造为表面的基板敷金属,在所示实施例中被构造为铜基板敷金属。功率元件10的朝向陶瓷基板90的平面接触部50和陶瓷基板90的另一平面接触部80互相平行延伸并且在此形成间隙。布置在那些面向陶瓷基板90的平面接触部50上的这样的接触件70完全地填充这些平坦的间隙并且全面地紧贴在功率元件10的这些平面接触部50以及在陶瓷基板90的另一平面接触部80上。接触件70因此布置用于接触功率元件10和陶瓷基板90。
开孔的接触件60、70以电镀的方式接触到相应基板或者芯片敷金属并且因此由于贯穿引导的金属接触部建立在相应平面接触部40、50、80之间的导电连接。
平面接触部40、50、80互相地电绝缘并且与必要时其他位于其周围的电位电绝缘,其方式为,在那些没有接触件60、70紧贴在其上的那些表面区域上的平面接触部40、50、80被用电绝缘材料包裹、在这里所描述的实施例中被用塑料包裹(在附图中并未明确示出)。
由于开孔的接触件60、70的电镀连接,金属,在所示实施例中是铜,被沉积在开孔的接触件60、70和平面接触部40、50、80之间的区域中(图3)。在所示实施例中,借助于所沉积的材料来构成如下层,这些层平面地沿着芯片敷金属或者陶瓷基板敷金属以及接触件60、70延伸。由于这种沉积,开孔的接触件60、70分别与功率元件连接。全部接触件60、70同时与其分别紧贴的相应平面接触部40、50、80连接。在没有特意示出的另外对应于所示的实施例的其他实施例中,接触件并不以电镀的方式连接,而是借助于烧结或焊接或扩散焊接或挤压或夹紧或粘合连接。
用陶瓷基板90和接触的功率元件10所构成的功率模块被布置在功率模块的冷却系统的流体流路径170中(图1)。功率模块的冷却系统被构造用于,沿着方向R穿过流体流路径170来引导冷却液。在所示实施例中,流体流路径170是空气流动路径。在没有特意示出的另外对应于所示的实施例的其他实施例中,设置另一流体流、例如冷却气体流或者冷却液体流,例如冷却水流,用于冷却。冷却液可以在流体流路径170中穿过开孔的接触件70,使得接触件70的开孔的材料构造冷却通道。理解为,在没有特意示出的其他实施例中,不必主动地借助于附加设置的流动装置来使冷却液流动。相反,流体流已经可以在一定程度上由于热对流来自主地形成。
在另外对应于图1中所示的实施例的、图2中所示的其他实施例中,热管180代替冷却循环的空气流而存在。热管180借助于在功率元件10和陶瓷基板90之间所布置的接触件70构成。热管180借助于开孔的接触件70构成。开孔的材料构成了热管180的内部。由于接触件70的材料的开孔性,冷却液可以穿流热管180。热管180为此具有液密的外罩182。这个外罩182在外周被施加,例如以电镀的方式或者通过镀层或焊接,使得冷却液无损失地穿过热管180来被引导。
热管180在此以已知的方式构成冷却液的冷却循环,其中由于蒸发和冷凝由其将热量吸收和释放。为此热管180在其远离功率元件10的末端上连接到冷却体185,使得冷却液在热管180的该远离的末端上冷凝。
Claims (10)
1.元件模块,所述元件模块具有元件(10),所述元件具有至少一个电气的接触部(40,50),其中开孔的接触件(60,70)被连接到所述至少一个电气的接触部(40,50)上,其中所述元件模块具有用于用冷却液来进行冷却的冷却系统,所述冷却系统包括一个或多个冷却通道,所述冷却通道借助于开孔的所述接触件(60,70)的孔来形成。
2.按照权利要求1所述的元件模块,其中所述接触件(60,70)以电镀的方式和/或借助于烧结和借助于焊接和/或借助于扩散焊接和/或挤压和/或夹紧和/或粘合来连接。
3.按照上述权利要求之一所述的元件模块,所述元件模块具有至少一个集成电路,其中所述接触件(60,70)连接在至少一个集成电路上。
4.按照上述权利要求之一所述的元件模块,所述元件模块具有电路板(90),所述电路板具有至少两个或者更多元件,所述元件分别借助于开孔的接触件共同连接到所述电路板(90)上。
5.按照上述权利要求之一所述的元件模块,其中至少一个开孔的所述接触件(60,70)借助于开孔的或者以金属,尤其是镍和/或银和/或金和/或锌和/或铜构成,尤其是作为海绵铜被构成。
6.按照上述权利要求之一所述的元件模块,其中至少一个开孔的所述接触件(60,70)以织物状的和/或泡沫状的和/或网状的结构或者借助于堆叠的导体框架来构成。
7.按照上述权利要求之一所述的元件模块,其中以水和/或其他冷却液体来构成所述冷却液。
8.按照上述权利要求之一所述的元件模块,其中所述冷却系统包括热管(180)。
9.功率模块,所述功率模块包括根据上述权利要求之一所述的元件模块。
10.功率模块,其中至少一个元件是功率元件。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102015214928.5A DE102015214928A1 (de) | 2015-08-05 | 2015-08-05 | Bauteilmodul und Leistungsmodul |
DE102015214928.5 | 2015-08-05 | ||
PCT/EP2016/068394 WO2017021394A1 (de) | 2015-08-05 | 2016-08-02 | Bauteilmodul und leistungsmodul |
Publications (2)
Publication Number | Publication Date |
---|---|
CN107851626A true CN107851626A (zh) | 2018-03-27 |
CN107851626B CN107851626B (zh) | 2021-08-13 |
Family
ID=56557706
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201680045964.5A Expired - Fee Related CN107851626B (zh) | 2015-08-05 | 2016-08-02 | 元件模块和功率模块 |
Country Status (6)
Country | Link |
---|---|
US (1) | US10741474B2 (zh) |
EP (1) | EP3332420B1 (zh) |
JP (1) | JP6596570B2 (zh) |
CN (1) | CN107851626B (zh) |
DE (1) | DE102015214928A1 (zh) |
WO (1) | WO2017021394A1 (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102016218420A1 (de) | 2016-09-26 | 2018-03-29 | Siemens Aktiengesellschaft | Leistungsmodul |
DE102017203132A1 (de) * | 2017-02-06 | 2018-08-09 | Siemens Aktiengesellschaft | Leistungsmodul |
EP3439028A1 (de) * | 2017-08-03 | 2019-02-06 | Siemens Aktiengesellschaft | Leistungsmodul mit mindestens einem leistungshalbleiter |
DE102018202630B4 (de) * | 2018-02-21 | 2023-06-22 | Te Connectivity Germany Gmbh | Kontaktanordnung und Verfahren zur Verbindung zweier Leiter |
DE102019204847A1 (de) * | 2019-04-04 | 2020-10-08 | Siemens Aktiengesellschaft | Vorrichtung zum Entwärmen elektrischer und/oder elektronischer Bauteile |
DE102021202630A1 (de) | 2021-03-18 | 2022-09-22 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein | Vorrichtung mit einem porösen Körper zum Aufnehmen einer Wärmemenge und Verfahren zum Bereitstellen einer Vorrichtung |
DE102021209482A1 (de) * | 2021-08-30 | 2023-03-02 | Robert Bosch Gesellschaft mit beschränkter Haftung | Elektronisches Modul mit wenigstens einem Leistungshalbleiter und Verfahren zu dessen Herstellung |
DE102022202730B4 (de) * | 2022-03-21 | 2024-02-15 | Siemens Healthcare Gmbh | Röntgenhochspannungsgenerator mit einem oszillierendem Wärmerohr |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001358270A (ja) * | 2000-06-14 | 2001-12-26 | Mitsubishi Electric Corp | 冷却装置 |
DE10244805A1 (de) * | 2002-09-26 | 2004-04-08 | Sma Regelsysteme Gmbh | Offenporig poröser Kühlkörper eines Wärmetauschers |
US20050103480A1 (en) * | 2003-11-18 | 2005-05-19 | Himanshu Pokharna | Enhanced heat exchanger |
US20050139992A1 (en) * | 2003-12-31 | 2005-06-30 | Holalkere Ven R. | Integrated stacked microchannel heat exchanger and heat spreader |
JP2006352080A (ja) * | 2005-05-16 | 2006-12-28 | Fuji Electric Holdings Co Ltd | 半導体装置の製造方法および半導体装置 |
CN101014235A (zh) * | 2007-02-09 | 2007-08-08 | 广州恩诺吉电子科技有限公司 | 一种均温传热装置及其制造方法 |
CN101018463A (zh) * | 2006-02-08 | 2007-08-15 | 富准精密工业(深圳)有限公司 | 电子装置组合 |
CN101645430A (zh) * | 2009-09-03 | 2010-02-10 | 浙江大学 | 芯片冷却装置 |
CN102646653A (zh) * | 2011-02-21 | 2012-08-22 | 日立电线株式会社 | 散热器及其制造方法 |
WO2015086184A1 (en) * | 2013-12-13 | 2015-06-18 | Abb Technology Ag | Semiconductor stack arrangement and semiconductor module |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69126686T2 (de) * | 1990-08-14 | 1997-10-23 | Texas Instruments Inc | Wärmetransportmodul für Anwendungen ultrahoher Dichte und Silizium auf Siliziumpackungen |
US5847927A (en) * | 1997-01-27 | 1998-12-08 | Raytheon Company | Electronic assembly with porous heat exchanger and orifice plate |
EP1130643A3 (de) * | 2000-03-03 | 2004-02-25 | D-Tech GmbH Antriebstechnik und Mikroelektronik | Aufbau von Leistungshalbleitern mit einer Ausgleichsschicht zum Kühlkörper |
DE10055454A1 (de) | 2000-11-09 | 2002-05-23 | Fujitsu Siemens Computers Gmbh | Kühlkörper |
JP2004006603A (ja) * | 2002-03-26 | 2004-01-08 | Fuji Electric Holdings Co Ltd | 半導体パワーデバイス |
DE10221138A1 (de) * | 2002-05-11 | 2004-02-05 | Madex Electronic Components Gmbh | Beschichtete Metallschaumwärmesenke |
JP4292913B2 (ja) | 2003-08-06 | 2009-07-08 | 株式会社デンソー | 半導体冷却ユニット |
JP2005123265A (ja) | 2003-10-14 | 2005-05-12 | Sumitomo Electric Ind Ltd | パワーデバイス冷却装置及びモータ駆動用インバータユニット |
JP4935220B2 (ja) * | 2006-07-21 | 2012-05-23 | 三菱マテリアル株式会社 | パワーモジュール装置 |
JP5965687B2 (ja) * | 2012-03-23 | 2016-08-10 | 株式会社 日立パワーデバイス | パワー半導体モジュール |
US8824145B2 (en) * | 2012-06-08 | 2014-09-02 | Infineon Technologies Ag | Electric device package and method of making an electric device package |
-
2015
- 2015-08-05 DE DE102015214928.5A patent/DE102015214928A1/de not_active Withdrawn
-
2016
- 2016-08-02 CN CN201680045964.5A patent/CN107851626B/zh not_active Expired - Fee Related
- 2016-08-02 US US15/750,150 patent/US10741474B2/en active Active
- 2016-08-02 EP EP16745482.6A patent/EP3332420B1/de active Active
- 2016-08-02 JP JP2018504906A patent/JP6596570B2/ja not_active Expired - Fee Related
- 2016-08-02 WO PCT/EP2016/068394 patent/WO2017021394A1/de active Application Filing
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001358270A (ja) * | 2000-06-14 | 2001-12-26 | Mitsubishi Electric Corp | 冷却装置 |
DE10244805A1 (de) * | 2002-09-26 | 2004-04-08 | Sma Regelsysteme Gmbh | Offenporig poröser Kühlkörper eines Wärmetauschers |
US20050103480A1 (en) * | 2003-11-18 | 2005-05-19 | Himanshu Pokharna | Enhanced heat exchanger |
US20050139992A1 (en) * | 2003-12-31 | 2005-06-30 | Holalkere Ven R. | Integrated stacked microchannel heat exchanger and heat spreader |
JP2006352080A (ja) * | 2005-05-16 | 2006-12-28 | Fuji Electric Holdings Co Ltd | 半導体装置の製造方法および半導体装置 |
CN101018463A (zh) * | 2006-02-08 | 2007-08-15 | 富准精密工业(深圳)有限公司 | 电子装置组合 |
CN101014235A (zh) * | 2007-02-09 | 2007-08-08 | 广州恩诺吉电子科技有限公司 | 一种均温传热装置及其制造方法 |
CN101645430A (zh) * | 2009-09-03 | 2010-02-10 | 浙江大学 | 芯片冷却装置 |
CN102646653A (zh) * | 2011-02-21 | 2012-08-22 | 日立电线株式会社 | 散热器及其制造方法 |
WO2015086184A1 (en) * | 2013-12-13 | 2015-06-18 | Abb Technology Ag | Semiconductor stack arrangement and semiconductor module |
Non-Patent Citations (1)
Title |
---|
贾广森等: "内冷通道横流条件下气膜冷却特性", 《航空动力学报》 * |
Also Published As
Publication number | Publication date |
---|---|
WO2017021394A1 (de) | 2017-02-09 |
JP6596570B2 (ja) | 2019-10-23 |
EP3332420A1 (de) | 2018-06-13 |
EP3332420B1 (de) | 2020-11-11 |
DE102015214928A1 (de) | 2017-02-09 |
JP2018528609A (ja) | 2018-09-27 |
CN107851626B (zh) | 2021-08-13 |
US20180301392A1 (en) | 2018-10-18 |
US10741474B2 (en) | 2020-08-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN107851626A (zh) | 元件模块和功率模块 | |
CN107452707B (zh) | 含热、电性能改善的再分布结构的芯片载体及半导体器件 | |
CN108133915B (zh) | 功率器件内置且双面散热的功率模组及其制备方法 | |
CN106463501B (zh) | 半导体模块 | |
CN108701677B (zh) | 基于多层式电路板的功率模块 | |
JP6310677B2 (ja) | 分離タブを備える低プロファイル表面実装パッケージ | |
US11437304B2 (en) | Substrate structures and methods of manufacture | |
US8792239B2 (en) | Power module package and method for manufacturing the same | |
CN105981168A (zh) | 功率半导体模块 | |
CN106576423A (zh) | 具有导热元件的电路载体 | |
CN107078110A (zh) | Igbt模组及其制造方法 | |
CN110112106A (zh) | 芯片封装模块及包含该芯片封装模块的电路板结构 | |
CN105870092A (zh) | 封装结构 | |
US20180226318A1 (en) | Power electronics module | |
US20230240012A1 (en) | Power electronic assembly having a laminate inlay and method of producing the power electronic assembly | |
CN106098648A (zh) | Igbt散热基板及其制造方法、igbt模组及其制造方法 | |
US9953913B1 (en) | Electronics package with embedded through-connect structure and method of manufacturing thereof | |
CN105374771A (zh) | 功率半导体模块以及用于冷却功率半导体模块的方法 | |
US20180040562A1 (en) | Elektronisches modul und verfahren zu seiner herstellung | |
JP6550477B2 (ja) | 開気孔接触片のガルバニック接合による部品の電気接触方法およびそれに対応する部品モジュール | |
CN208386997U (zh) | 一种电路板 | |
CN107371356A (zh) | 一种电路板组件、空调器的电控盒以及空调器 | |
US10700037B2 (en) | Reinforcement for electrical connectors | |
JP6021745B2 (ja) | 冷却部材および半導体装置 | |
CN104867903B (zh) | 电子模块 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20210813 |