CN107851580B - 旋转基板激光退火 - Google Patents

旋转基板激光退火 Download PDF

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Publication number
CN107851580B
CN107851580B CN201680040639.XA CN201680040639A CN107851580B CN 107851580 B CN107851580 B CN 107851580B CN 201680040639 A CN201680040639 A CN 201680040639A CN 107851580 B CN107851580 B CN 107851580B
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China
Prior art keywords
laser source
substrate
interior volume
radiation
reflector
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CN201680040639.XA
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English (en)
Chinese (zh)
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CN107851580A (zh
Inventor
约瑟夫·M·拉内什
沙善·夏尔马
迪瓦卡尔·N·科德拉雅
阿伦·缪尔·亨特
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Applied Materials Inc
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Applied Materials Inc
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Priority to CN202211184698.8A priority Critical patent/CN115527896B/zh
Publication of CN107851580A publication Critical patent/CN107851580A/zh
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    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K5/00—Irradiation devices
    • G21K5/10—Irradiation devices with provision for relative movement of beam source and object to be irradiated
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Recrystallisation Techniques (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
CN201680040639.XA 2015-07-29 2016-07-19 旋转基板激光退火 Active CN107851580B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202211184698.8A CN115527896B (zh) 2015-07-29 2016-07-19 旋转基板激光退火

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201562198556P 2015-07-29 2015-07-29
US62/198,556 2015-07-29
PCT/US2016/042954 WO2017019384A1 (en) 2015-07-29 2016-07-19 Rotating substrate laser anneal

Related Child Applications (1)

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CN202211184698.8A Division CN115527896B (zh) 2015-07-29 2016-07-19 旋转基板激光退火

Publications (2)

Publication Number Publication Date
CN107851580A CN107851580A (zh) 2018-03-27
CN107851580B true CN107851580B (zh) 2022-10-18

Family

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Family Applications (2)

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CN201680040639.XA Active CN107851580B (zh) 2015-07-29 2016-07-19 旋转基板激光退火
CN202211184698.8A Active CN115527896B (zh) 2015-07-29 2016-07-19 旋转基板激光退火

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Country Status (8)

Country Link
US (1) US10256005B2 (https=)
EP (1) EP3329510B1 (https=)
JP (2) JP6985249B2 (https=)
KR (1) KR102531865B1 (https=)
CN (2) CN107851580B (https=)
DE (1) DE202016009128U1 (https=)
TW (2) TWI692012B (https=)
WO (1) WO2017019384A1 (https=)

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CN107851580B (zh) * 2015-07-29 2022-10-18 应用材料公司 旋转基板激光退火
CN115206844A (zh) * 2015-10-09 2022-10-18 应用材料公司 用于epi工艺的晶片加热的二极管激光器
US10281335B2 (en) 2017-05-26 2019-05-07 Applied Materials, Inc. Pulsed radiation sources for transmission pyrometry
JP7191504B2 (ja) * 2017-07-14 2022-12-19 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
JP2019021828A (ja) * 2017-07-20 2019-02-07 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
CN109935532B (zh) * 2017-12-15 2022-05-31 上海微电子装备（集团）股份有限公司 激光热处理装置和处理方法
US11195732B2 (en) * 2018-04-12 2021-12-07 Mattson Technology, Inc. Low thermal budget annealing
KR102823628B1 (ko) * 2018-05-08 2025-06-20 램 리써치 코포레이션 텔레센트릭 (tele-centric) 렌즈, 광학 빔 폴딩 어셈블리, 또는 다각형 스캐너를 갖는 렌즈 회로를 포함하는 원자 층 에칭 및 증착 프로세싱 시스템들
JP7228990B2 (ja) * 2018-11-07 2023-02-27 東京エレクトロン株式会社 基板処理装置及び基板処理方法
US11828656B2 (en) * 2020-11-20 2023-11-28 Applied Materials, Inc. Reflector plate for substrate processing
CN117242560A (zh) * 2021-04-29 2023-12-15 应用材料公司 用于快速热处理腔室的窗

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Also Published As

Publication number Publication date
EP3329510A4 (en) 2019-05-01
WO2017019384A1 (en) 2017-02-02
JP2018526819A (ja) 2018-09-13
TWI722722B (zh) 2021-03-21
TW202029299A (zh) 2020-08-01
CN115527896B (zh) 2026-04-21
JP2022043054A (ja) 2022-03-15
KR102531865B1 (ko) 2023-05-16
EP3329510A1 (en) 2018-06-06
TW201721723A (zh) 2017-06-16
DE202016009128U1 (de) 2022-07-25
US10256005B2 (en) 2019-04-09
JP7462604B2 (ja) 2024-04-05
CN115527896A (zh) 2022-12-27
TWI692012B (zh) 2020-04-21
CN107851580A (zh) 2018-03-27
KR20180026789A (ko) 2018-03-13
JP6985249B2 (ja) 2021-12-22
EP3329510B1 (en) 2022-04-13
US20170032865A1 (en) 2017-02-02

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