CN107768530B - 柔性基板及其制作方法 - Google Patents
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- 239000000758 substrate Substances 0.000 title claims abstract description 99
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 239000002648 laminated material Substances 0.000 claims abstract description 42
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 14
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 14
- 238000006356 dehydrogenation reaction Methods 0.000 claims abstract description 12
- 238000010438 heat treatment Methods 0.000 claims description 16
- 239000004642 Polyimide Substances 0.000 claims description 15
- 229920001721 polyimide Polymers 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 9
- 230000001681 protective effect Effects 0.000 claims description 8
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 230000007547 defect Effects 0.000 abstract description 6
- 238000005452 bending Methods 0.000 abstract description 5
- 239000010409 thin film Substances 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
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Abstract
本发明公开了一种柔性基板,包括二层柔性基底,在二层柔性基底之间设有至少一层由氧化硅和非晶硅构成的叠层材料。本发明还公开了一种柔性基板的制作方法,包括如下步骤:步骤一、制作一层第一柔性基底;步骤二、在第一柔性基底上制作至少一层由氧化硅和非晶硅构成的叠层材料;步骤三、对叠层材料进行一次去氢处理;步骤四、在叠层材料上再制作一层第二柔性基底,得到柔性基板。与现有技术相比,通过设置两层柔性基底以及在柔性基底之间设置叠层材料,能够提高多次弯折的稳定性;在制作完叠层材料后对叠层材料进行去氢处理,能够减少柔性基板在后端制程中缺陷的产生。
Description
技术领域
本发明涉及一种显示面板生产技术,特别是一种柔性基板及其制作方法。
背景技术
柔性显示是一种基于柔性基底形成的显示装置。由于柔性显示装置具有可卷曲、宽视角、便于携带等特点,因此具有广阔的应用前景和良好的市场潜力。目前,可用于柔性显示基底材料有超薄玻璃、塑料薄膜以及金属箔片等。
聚酰亚胺(PI)是一类具有酰亚胺重复单元的聚合物,具有适用温度广、耐化学腐蚀、高强度、高绝缘等优点。PI作为一种特种工程材料,已广泛应用在航空、航天、微电子等领域。目前PI作为柔性基底材料已经成功的应用到一些柔性显示电子产品上。
柔性显示基板是柔性OLED显示装置的一大难点,更是一项关键技术。柔性显示基板在后段制程的稳定性有利于大大提升array良率,柔性显示装置的弯折性最主要依赖于柔性基板的设计,包括柔性基板的材料、柔性基板的结构等,如何能够保证后端制程的稳定性,是一个有待解决的问题。
发明内容
为克服现有技术的不足,本发明提供一种柔性基板及其制作方法,解决现有的柔性基板与薄膜晶体管器件层之间应力失配的问题,同时提高了柔性基板多次弯折的稳定性。
本发明提供了一种柔性基板,包括二层柔性基底,在二层柔性基底之间设有至少一层由氧化硅和非晶硅构成的叠层材料。
进一步地,所述柔性基底的材料为聚酰亚胺。
进一步地,所述叠层材料中非晶硅设于氧化硅之上。
进一步地,二层柔性基底的厚度不相同。
本发明还提供了一种柔性基板的制作方法,其特征在于:包括如下步骤:
步骤一、制作第一柔性基底;
步骤二、在第一柔性基底上制作至少一层由氧化硅和非晶硅构成的叠层材料;
步骤三、对叠层材料进行一次去氢处理;
步骤四、在叠层材料上再制作第二柔性基底,得到柔性基板。
进一步地,所述去氢处理为在保护气氛下对叠层材料进行加热。
进一步地,在保护气氛下对叠层材料进行加热的加热温度为420-550℃,加热时间为15-60min。
进一步地,所述步骤一和步骤四中第一柔性基底和第二柔性基底的制作具体为通过涂布、固化的方式制作得到。
进一步地,所述步骤二中叠层材料通过等离子体增强化学气相沉积制备得到。
进一步地,所述第一柔性基底和第二柔性基底的材料为聚酰亚胺。
本发明与现有技术相比,通过设置两层柔性基底以及在柔性基底之间设置叠层材料,能够提高多次弯折的稳定性;在制作完叠层材料后对叠层材料进行去氢处理,能够减少柔性基板在后端制程中缺陷的产生。
附图说明
图1是本发明柔性基板的结构示意图;
图2是本发明制作第一层柔性基底的示意图;
图3是本发明制作叠层材料的示意图。
具体实施方式
在描述本公开时,将省略与描述无关的部分。在整个说明书中,相同的附图标记通常指示相同的元件。另外,为了便于更好地理解和描述方便起见,随意地示出了附图中所示的每个元件的尺寸和厚度,但本发明的实施方式并不限于此。
在附图中,为了清晰起见并且为了更好地理解和便于描述,可能放大了层、膜、板、区域等的厚度。应当理解当元件如层、膜、区域、或衬底被称为“位于另一元件上”时,其可以直接位于另一元件上或者还可以存在插入的元件。
另外,除非明确地相反地说明,用语“包括(comprise)”及其变型如“包括(comprises)”或“包括(comprising)”应理解为是指包括所述元件而非排除任何其他元件。
此外,在说明书中,用语“位于…上”指位于对象部分之上或位于对象部分之下,而并非必须指基于重力方向位于该对象部分的上侧。
下面结合附图和实施例对本发明作进一步详细说明。
如图1所示,本发明公开了一种柔性基板,包括二层柔性基底1,在二层柔性基底1之间设有至少一层由氧化硅(SiO2)21和非晶硅(a-Si)22构成的叠层材料2。具体地,二层柔性基底1中位于叠层材料2下端的为第一柔性基底11,位于叠层材料2上端的为第二柔性基底12,所述第一柔性基底11与第二柔性基底12的厚度不相同,叠层材料2中非晶硅设于氧化硅之上。
本发明中柔性基底1的材料为聚酰亚胺,采用涂布、固化的方式制备得到。
作为本发明的一种实施方式,叠层材料2设置一层,第一柔性基底11的厚度大于第二柔性基底12的厚度。所述第一柔性基底11的厚度为4-15um;第二柔性基底12的厚度为4-10um;氧化硅的厚度为而非晶硅的厚度为
所述叠层材料2中,氧化硅21和非晶硅22可分别制作也可采用在同一个制程中完成,具体采用等离子体增强化学气相沉积(PECVD)制备得到。
本发明的柔性基板采用双层结构,能够提高多次弯折的稳定性,从而避免了柔性基板与薄膜晶体管器件层之间应力失配的问题。
本发明还公开了一种柔性基板的制作方法,包括如下步骤:
步骤一、如图1所示,制作一层第一柔性基底11;具体地,制作第一柔性基底11,采用聚酰亚胺材料通过现有基板中PI的涂布、固化的方法制备得到,所述涂布、固化可在一衬底上进行。第一柔性基底11的厚度为4-15um;
步骤二、如图2所示,在第一柔性基底11上制作至少一层由氧化硅和非晶硅构成的叠层材料2;具体地,所述叠层材料2通过等离子体增强化学气相沉积(PECVD)制备得到。所述叠层材料2中,氧化硅21和非晶硅22可分别制作也可采用在同一个制程中完成。
步骤三、对叠层材料2进行一次去氢处理;所述去氢处理为在保护气氛下对叠层材料2进行加热。这里所述的加热连同第一柔性基底11一起进行,具体地,在保护气氛下对叠层材料2进行加热的加热温度为420-550℃,加热时间为15-60min;所述加热可以在烘烤机台中进行,也可以是用于加热的设备中进行,在此不做具体限定。所述保护气氛可选用氮气,但发明不限于此,还可以采用其他用于保护气氛的惰性气体,例如:氦、氖、氩、氪、氙等气体。所述氧化硅的厚度为而非晶硅的厚度为
步骤四、如图1所示,在叠层材料2上再制作一层第二柔性基底12,得到柔性基板。具体地,制作第二柔性基底12,采用聚酰亚胺材料通过现有基板中PI涂布、固化的方法制备得到。第二柔性基底12的厚度为4-10um。
在步骤四中制作第二柔性基底12时固化的温度需小于去氢处理时加热温度,具体为20℃以上。
作为本发明柔性基板制作方法的一种实施方式,二层柔性基底1中位于叠层材料2下端的第一柔性基底11与位于叠层材料2上端的第二柔性基底12的厚度不相同,叠层材料2中非晶硅设于氧化硅之上。具体地,第一柔性基底12的厚度大于第二柔性基底12的厚度。
本发明在制作完成叠层材料之后进行去氢处理,能够避免在叠层材料上制作聚酰亚胺的柔性基底时,聚酰亚胺与非晶硅之间产生更多的缺陷问题。
本发明在用于制作薄膜晶体管器件层时,薄膜晶体管器件层制作在第二柔性基底12之上。
本发明还具有柔性显示基板使用双层PI的结构,中间内层的结构使用SiO2/a-Si叠加比较理想,SiO2有阻隔水氧和热量的好处,但是亲水性不如a-Si好。然而这种叠加结构使用中会导致第二层柔性基底产生更多缺陷(气泡和异物)。在PECVD制备SiO2/a-Si叠层结构后,经过一次去氢处理,再进行第二层柔性基底的涂布固化,可以减少缺陷产生。
虽然已经参照特定实施例示出并描述了本发明,但是本领域的技术人员将理解:在不脱离由权利要求及其等同物限定的本发明的精神和范围的情况下,可在此进行形式和细节上的各种变化。
Claims (6)
1.一种柔性基板的制作方法,其特征在于:包括如下步骤:
步骤一、制作第一柔性基底(11);
步骤二、在第一柔性基底(11)上制作至少一层由氧化硅和非晶硅构成的叠层材料(2);
步骤三、对叠层材料(2)进行一次去氢处理;
步骤四、在叠层材料(2)上再制作第二柔性基底(12),得到柔性基板。
2.根据权利要求1所述的柔性基板的制作方法,其特征在于:所述去氢处理为在保护气氛下对叠层材料(2)进行加热。
3.根据权利要求2所述的柔性基板的制作方法,其特征在于:在保护气氛下对叠层材料(2)进行加热的加热温度为420-550℃,加热时间为15-60min。
4.根据权利要求1-3任意一项所述的柔性基板的制作方法,其特征在于:所述步骤一和步骤四中第一柔性基底(11)和第二柔性基底(12)的制作具体为通过涂布、固化的方式制作得到。
5.根据权利要求4所述的柔性基板的制作方法,其特征在于:所述步骤二中叠层材料(2)通过等离子体增强化学气相沉积制备得到。
6.根据权利要求1所述的柔性基板的制作方法,其特征在于:所述第一柔性基底(11)和第二柔性基底(12)的材料为聚酰亚胺。
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