CN107750282A - Pecvd舟 - Google Patents

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CN107750282A
CN107750282A CN201680034106.0A CN201680034106A CN107750282A CN 107750282 A CN107750282 A CN 107750282A CN 201680034106 A CN201680034106 A CN 201680034106A CN 107750282 A CN107750282 A CN 107750282A
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wafer
boat plate
pecvd
slit
boat
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T·科恩迈尔
H-P·弗尔克
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Cohen And Maier Special Graphite Refco Group Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67313—Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements

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Abstract

本发明涉及具有至少一个用于容纳晶圆的舟板的PECVD舟，用于进入和离开真空镀膜室。本发明所解决的问题是提出一种低质量的用于容纳晶圆并将晶圆送入及送出真空室的PECVD舟，其通过更大的晶圆容量、缩短的过程周期以及加热和均匀化阶段的能源节省来实现真空镀膜室产量的提升。该问题得以解决是因为舟板(21)为垂直树立，并具有多个在舟板(21)的纵向上向上打开的用于容纳晶圆(22)的U形容纳狭槽(23)，通过这种方式使插入容纳狭槽(23)的晶圆(22)与舟板(21)的板线平齐。

Description

PECVD舟
技术领域
本发明涉及具有至少一个用于容纳晶圆的舟板的PECVD舟，用于进入和离开真空镀膜室。
背景技术
PECVD舟用于例如等离子体增强化学气相沉积(PECVD)。PECVD是一种将薄膜从气相沉积在基板(例如晶圆)上的固态层的方法。PECVD过程是在抽真空的真空室内进行，在这个PECVD过程中，将尽可能多的晶圆置于所谓的等离子体舟或由单个舟板组成的PECVD舟上，在真空室内被同时引入，并且在PECVD过程中，所有的晶圆均停留在这些等离子体舟上。
为了能够执行PECVD过程，将用PECVD舟引入的晶圆以及PECVD舟自身加热到预定的过程温度是必要的。
通常使用的PECVD舟或舟板，目前由电学上导电的材料制成，例如石墨或钛。图1(现有技术)的俯视图显示了根据现有技术以平放排列的方式用于容纳多个矩形或正方形晶圆11的PECVD舟的舟板10。为了将晶圆11牢固地固定于每个开槽12内，在开槽12的周围，舟板10的边框13上提供三根固定销14，以确保置于舟板10上的晶圆11在运送过程中不会滑动。
为了实现尽可能大的晶圆容量，通常会使用合适的间隔件将多个这样的舟板10上下堆叠在一起，以形成具有更大晶圆容量的PECVD舟。
PECVD舟一方面要满足在运送及沉积过程中将晶圆11牢固固定住的要求，另一方面经由PECVD舟或舟板将沉积过程所需的电位施加到晶圆是必要的。
晶圆11放置或悬挂在舟板10上，其中在舟板10上，例如由石墨制成，的固定销14也建立必要的电接触。
为了降低热质量，舟板10具有小于晶圆11的开槽12或开口，以确保每个晶圆11顶住舟板的环绕每个开口的框形区。因此，晶圆边缘总是具有外围的与舟板10的边框的热接触和电接触。
加热所需的时间尤其由要加热的晶圆的数量、PECVD舟的质量、达到均匀的温度分布所需的均匀化时间以及执行加热的方式来确定。显然，为了实现高效且快速的沉积过程，加热时间以及随后的均匀化时间应尽可能的短。
晶圆温度主要受石墨板的温度的影响或取决于石墨板的温度，其中目前使用的舟板的质量相当于晶圆的质量的4至5倍。
在某些过程步骤中，只能以对流和/或热辐射的方式加热PECVD舟，而无法使用等离子体辅助加热。这造成长时间的加热阶段，并由此造成机器性能和生产量的损失。此外，通常包含许多舟板的PECVD舟具有相对大的质量导致高热惯性。
这导致过度加热/冷却时间和稳定化时间(均匀化时间)，直到晶圆被加热到所需的过程温度，或者在PECVD过程之后再次冷却。
发明内容
本发明的目的是提供一种用于容纳晶圆并将晶圆送入及送出真空室的低质量PECVD舟，其通过更大的晶圆容量、缩短的过程周期以及加热和均匀化阶段的能源节省来实现机器生产量的提升。
采用主权利要求的特征即可达到本发明的上述目的，其中舟板为垂直树立，并具有多个在舟板的纵向上向上打开的用于容纳晶圆的U形容纳狭槽，使得插入容纳狭槽的晶圆与舟板的板线平齐。
更多有利的实施例构成相关联的从属权利要求的主要内容。
因此，每个容纳狭槽由舟板的侧向固定臂和下部框架元件所限定，使得插入容纳狭槽的晶圆被侧向固定臂部分环绕。
为了保持最低的热导率，每个容纳狭槽设置三个容纳元件，侧向固定臂和下部框架元件分别具有一个容纳元件，该容纳元件向内指向容纳狭槽，并以U形、V形或叉状的方式环绕插入的晶圆的外边缘，将晶圆插入这三个容纳元件之后，利用晶圆自身的重量固定住晶圆。
为了实现更高的晶圆容量并避免在晶圆背面产生沉积，可以将两个晶圆以背对背装载的方式插入每个容纳狭槽的容纳元件。
另外有利的方式是，将多个舟板以彼此间隔一段距离的方式平行排列，且彼此连接以形成PECVD舟，其中在舟板之间设有间隔元件和连接元件。
间隔元件和连接元件由不导电的材料制成，例如Al2O3、石英玻璃或陶瓷。
此外，舟板由石墨、CFC或钛制成，并通过成型加工方法来制造。
根据本发明，舟板或PECVD舟的特殊优点在于较小的热质量，导致了更快速地加热/冷却以及均匀化装载晶圆的PECVD舟。
另外的优点是舟内装载更多的晶圆-也就是说，由于晶圆在板线上，增加的生产能力和板的厚度被使用，不再代表空间的浪费。
并且，由于更快速的加热过程，可以通过更大的晶圆容量和缩短的过程周期来提高机器的产量，同时由此还可以通过降低舟的质量来节省加热/均匀化阶段的能源，从而降低热能。
最后，由于舟的质量的降低和由此带来的冷却要求的降低，还可以节省冷却和排出阶段的能源。
附图说明
以下是通过示范性实施例对本发明更详尽的阐释。在附图中：
图1示出了根据现有技术用于以平躺位置容纳晶圆的舟板；
图2示出了根据本发明用于以直立排列方式容纳晶圆的舟板；
图3示出了由多个以彼此间隔一段距离的方式平行排列且彼此连接的舟板组成的PECVD舟；以及
图4示出了用于晶圆的容纳元件的放大图。
具体实施方式
图2示出了根据本发明的晶圆支架20，在本例中，其由垂直或边缘方向的舟板21组成，用于容纳多个晶圆22。如图所示，舟板容纳至多三个晶圆22。为了稳固地容纳晶圆22，在舟板21内设置三个在舟板21的纵向上前后排列的容纳狭槽23，其由舟板21的侧向固定臂24和下部框架元件25所限定。固定臂24的长度有特定的尺寸，使得其仅延伸到插入的晶圆的大约一半高度。
为了稳固地容纳晶圆22，向内指向容纳狭槽23的容纳元件26从固定臂24和下部框架元件25突出。朝向容纳狭槽23突出的每个容纳元件26的端面刻入晶圆的外边缘可以嵌入的凹槽。因此，容纳元件26以U形、V形或叉状形状配合的方式轻轻握住晶圆22的各个外边缘，从而在晶圆22插入容纳元件26之后将其固定住，使得晶圆22在插入容纳元件26之后可以稳固地被固定(图4)。还可能的是每个容纳狭槽23同时容纳两个晶圆22，使得避免在晶圆背面产生沉积成为可能。
舟板21是以成型加工方法，例如铣销，从一个工件制成。显然地，舟板21的厚度必须大于插入容纳元件26的两个背晶圆的厚度。
为了稳固地容纳晶圆22，每个容纳狭槽23内具有三个这样的容纳元件26足以，特别如图2所示，三个容纳元件26分别位于左边固定臂24的顶端、大约右边固定臂24的中间以及下部框架元件25右边三分之一的位置。这些容纳元件26的准确位置并不重要，重要的是，为了在容纳狭槽26内稳固地容纳晶圆22，要存在三个这样的容纳元件26。
以这种方式，每个垂直树立的晶圆22通过其自身的重量稳固地固定在三维的三个点，并且与舟板21平齐，因此在舟板21移动时，晶圆22不会从舟板21的垂直使用位置上脱落。
图3示出了晶圆舟或PECVD舟27，其由多个垂直树立且彼此间隔一段距离依序排列及彼此机械地连接的舟板21组成。为了舟板21之间的机械连接，设置用于容纳间隔元件和连接元件(未示出)的钻孔28，其中容纳间隔元件和连接元件由不导电的材料制成，例如Al2O3、石英玻璃或陶瓷，以避免短路。
舟板21可以由石墨、CFC或钛制成，并且可以使用已知的成型加工方法容易地制造舟板21。
根据本发明的PECVD舟27也可以用来通过晶圆22的背对背装载方式进行背面镀膜，即通过两个晶圆的背面彼此接触的方式将两个晶圆22放入或插入每个舟板21的每个容纳狭槽23。
由于每个晶圆22仅固定于舟板21内的三个点，晶圆22与容纳狭槽23的确定距离有很大的自由度。这样做的特殊优点在于使晶圆22在最大程度上与舟板21或PECVD舟27热解耦。从而，加热功率可以更有效地到达晶圆22，而不必先加热舟板21的质量。由此明显地缩短加热及冷却过程和均匀化时间。
通过舟板21的创造性配置，质量/表面积比率朝有利于晶圆22的方向大幅改变。相对于它的质量，晶圆22的表面积远大于舟板21。
根据本发明的舟板21或由其组成的PECVD舟27可以应用于许多PECVD过程，并且特别适用于太阳能光伏领域的PECVD过程，在该过程中，沉积TMA、SiNox和SiN层。
通过成型加工方法可以容易地由石墨、CFC(碳纤维强化碳)或钛制造出本发明的舟板21，其一个制成件包括容纳元件26。舟板21的厚度必须大于要插入容纳元件26的晶圆22的厚度。
附图标记列表
10：舟板
11：晶圆
12：开槽
13：边框
14：固定销
20：晶圆支架
21：舟板
22：晶圆
23：容纳狭槽
24：固定臂
25：下部框架元件
26：容纳元件
27：PECVD舟
28：钻孔

Claims (8)

1.一种PECVD舟，其具有至少一个用于容纳晶圆的舟板，用于进入和离开真空镀膜室，其特征在于，所述舟板(21)为垂直树立，具有多个在所述舟板(21)的纵向上向上打开的用于容纳晶圆(22)的U形容纳狭槽(23)，使得插入所述容纳狭槽(23)的晶圆(22)与所述舟板(21)的板线平齐。
2.根据权利要求1所述的PECVD舟，其特征在于，每个容纳狭槽(23)由所述舟板(21)的侧向固定臂(24)和下部框架元件(25)所限定，使得插入所述容纳狭槽(23)的晶圆(22)被所述侧向固定臂(24)部分环绕。
3.根据权利要求2所述的PECVD舟，其特征在于，设置三个容纳元件(26)，所述侧向固定臂(24)和所述下部框架元件(25)分别具有一个容纳元件(26)，所述容纳元件向内指向所述容纳狭槽(23)，并以U形或叉状的方式夹紧插入的晶圆(22)的外边缘，同时利用晶圆(22)自身的重量固定住晶圆(22)。
4.根据权利要求1至3中任一项所述的PECVD舟，其特征在于，两个晶圆(22)以背对背装载的方式插入每个容纳狭槽(23)的所述容纳元件(26)。
5.根据权利要求1至4中任一项所述的PECVD舟，其特征在于，多个舟板(21)以彼此间隔一段距离的方式平行排列，且彼此连接以形成PECVD舟(27)。
6.根据权利要求5所述的PECVD舟，其特征在于，由不导电的材料制成的间隔元件和连接元件设置于所述舟板(21)之间。
7.根据权利要求6所述的PECVD舟，其特征在于，所述间隔元件和所述连接元件由Al2O3、石英玻璃或陶瓷制成。
8.根据权利要求1至7中任一项所述的PECVD舟，其特征在于，所述舟板(21)由石墨、CFC或钛制成，并通过成型加工方法来制造。
CN201680034106.0A 2015-04-13 2016-04-13 Pecvd舟 Active CN107750282B (zh)

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Application Number Priority Date Filing Date Title
DE102015105599.6 2015-04-13
DE102015105599 2015-04-13
PCT/EP2016/058062 WO2016166125A1 (de) 2015-04-13 2016-04-13 Pecvd-boot

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