DE112016001714A5 - Pecvd-boot - Google Patents
Pecvd-boot Download PDFInfo
- Publication number
- DE112016001714A5 DE112016001714A5 DE112016001714.6T DE112016001714T DE112016001714A5 DE 112016001714 A5 DE112016001714 A5 DE 112016001714A5 DE 112016001714 T DE112016001714 T DE 112016001714T DE 112016001714 A5 DE112016001714 A5 DE 112016001714A5
- Authority
- DE
- Germany
- Prior art keywords
- pecvd boat
- pecvd
- boat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67313—Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102015105599.6 | 2015-04-13 | ||
DE102015105599 | 2015-04-13 | ||
PCT/EP2016/058062 WO2016166125A1 (de) | 2015-04-13 | 2016-04-13 | Pecvd-boot |
Publications (1)
Publication Number | Publication Date |
---|---|
DE112016001714A5 true DE112016001714A5 (de) | 2018-02-15 |
Family
ID=55809080
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE112016001714.6T Pending DE112016001714A5 (de) | 2015-04-13 | 2016-04-13 | Pecvd-boot |
Country Status (5)
Country | Link |
---|---|
US (1) | US20180119278A1 (de) |
CN (1) | CN107750282B (de) |
DE (1) | DE112016001714A5 (de) |
TW (1) | TWI714574B (de) |
WO (1) | WO2016166125A1 (de) |
Families Citing this family (51)
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US10163479B2 (en) | 2015-08-14 | 2018-12-25 | Spin Transfer Technologies, Inc. | Method and apparatus for bipolar memory write-verify |
US10366774B2 (en) | 2016-09-27 | 2019-07-30 | Spin Memory, Inc. | Device with dynamic redundancy registers |
US10437491B2 (en) | 2016-09-27 | 2019-10-08 | Spin Memory, Inc. | Method of processing incomplete memory operations in a memory device during a power up sequence and a power down sequence using a dynamic redundancy register |
US10460781B2 (en) | 2016-09-27 | 2019-10-29 | Spin Memory, Inc. | Memory device with a dual Y-multiplexer structure for performing two simultaneous operations on the same row of a memory bank |
US10446210B2 (en) | 2016-09-27 | 2019-10-15 | Spin Memory, Inc. | Memory instruction pipeline with a pre-read stage for a write operation for reducing power consumption in a memory device that uses dynamic redundancy registers |
US10546625B2 (en) | 2016-09-27 | 2020-01-28 | Spin Memory, Inc. | Method of optimizing write voltage based on error buffer occupancy |
US10437723B2 (en) | 2016-09-27 | 2019-10-08 | Spin Memory, Inc. | Method of flushing the contents of a dynamic redundancy register to a secure storage area during a power down in a memory device |
US10360964B2 (en) | 2016-09-27 | 2019-07-23 | Spin Memory, Inc. | Method of writing contents in memory during a power up sequence using a dynamic redundancy register in a memory device |
US10818331B2 (en) | 2016-09-27 | 2020-10-27 | Spin Memory, Inc. | Multi-chip module for MRAM devices with levels of dynamic redundancy registers |
FR3058163A1 (fr) * | 2016-10-31 | 2018-05-04 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Porte echantillon |
US10947640B1 (en) * | 2016-12-02 | 2021-03-16 | Svagos Technik, Inc. | CVD reactor chamber with resistive heating for silicon carbide deposition |
US10481976B2 (en) | 2017-10-24 | 2019-11-19 | Spin Memory, Inc. | Forcing bits as bad to widen the window between the distributions of acceptable high and low resistive bits thereby lowering the margin and increasing the speed of the sense amplifiers |
US10489245B2 (en) | 2017-10-24 | 2019-11-26 | Spin Memory, Inc. | Forcing stuck bits, waterfall bits, shunt bits and low TMR bits to short during testing and using on-the-fly bit failure detection and bit redundancy remapping techniques to correct them |
US10656994B2 (en) | 2017-10-24 | 2020-05-19 | Spin Memory, Inc. | Over-voltage write operation of tunnel magnet-resistance (“TMR”) memory device and correcting failure bits therefrom by using on-the-fly bit failure detection and bit redundancy remapping techniques |
US10529439B2 (en) | 2017-10-24 | 2020-01-07 | Spin Memory, Inc. | On-the-fly bit failure detection and bit redundancy remapping techniques to correct for fixed bit defects |
US10891997B2 (en) | 2017-12-28 | 2021-01-12 | Spin Memory, Inc. | Memory array with horizontal source line and a virtual source line |
US10395712B2 (en) | 2017-12-28 | 2019-08-27 | Spin Memory, Inc. | Memory array with horizontal source line and sacrificial bitline per virtual source |
US10811594B2 (en) | 2017-12-28 | 2020-10-20 | Spin Memory, Inc. | Process for hard mask development for MRAM pillar formation using photolithography |
US10424726B2 (en) | 2017-12-28 | 2019-09-24 | Spin Memory, Inc. | Process for improving photoresist pillar adhesion during MRAM fabrication |
US10360962B1 (en) | 2017-12-28 | 2019-07-23 | Spin Memory, Inc. | Memory array with individually trimmable sense amplifiers |
US10395711B2 (en) | 2017-12-28 | 2019-08-27 | Spin Memory, Inc. | Perpendicular source and bit lines for an MRAM array |
US10367139B2 (en) | 2017-12-29 | 2019-07-30 | Spin Memory, Inc. | Methods of manufacturing magnetic tunnel junction devices |
US10840436B2 (en) | 2017-12-29 | 2020-11-17 | Spin Memory, Inc. | Perpendicular magnetic anisotropy interface tunnel junction devices and methods of manufacture |
US10546624B2 (en) | 2017-12-29 | 2020-01-28 | Spin Memory, Inc. | Multi-port random access memory |
US10886330B2 (en) | 2017-12-29 | 2021-01-05 | Spin Memory, Inc. | Memory device having overlapping magnetic tunnel junctions in compliance with a reference pitch |
US10424723B2 (en) | 2017-12-29 | 2019-09-24 | Spin Memory, Inc. | Magnetic tunnel junction devices including an optimization layer |
US10784439B2 (en) | 2017-12-29 | 2020-09-22 | Spin Memory, Inc. | Precessional spin current magnetic tunnel junction devices and methods of manufacture |
US10840439B2 (en) | 2017-12-29 | 2020-11-17 | Spin Memory, Inc. | Magnetic tunnel junction (MTJ) fabrication methods and systems |
US10438996B2 (en) | 2018-01-08 | 2019-10-08 | Spin Memory, Inc. | Methods of fabricating magnetic tunnel junctions integrated with selectors |
US10438995B2 (en) | 2018-01-08 | 2019-10-08 | Spin Memory, Inc. | Devices including magnetic tunnel junctions integrated with selectors |
CN108103481B (zh) * | 2018-01-25 | 2023-07-18 | 无锡盈芯半导体科技有限公司 | 衬底自动挟式石英舟 |
US10388861B1 (en) * | 2018-03-08 | 2019-08-20 | Spin Memory, Inc. | Magnetic tunnel junction wafer adaptor used in magnetic annealing furnace and method of using the same |
US10446744B2 (en) | 2018-03-08 | 2019-10-15 | Spin Memory, Inc. | Magnetic tunnel junction wafer adaptor used in magnetic annealing furnace and method of using the same |
US10784437B2 (en) | 2018-03-23 | 2020-09-22 | Spin Memory, Inc. | Three-dimensional arrays with MTJ devices including a free magnetic trench layer and a planar reference magnetic layer |
US11107974B2 (en) | 2018-03-23 | 2021-08-31 | Spin Memory, Inc. | Magnetic tunnel junction devices including a free magnetic trench layer and a planar reference magnetic layer |
US11107978B2 (en) | 2018-03-23 | 2021-08-31 | Spin Memory, Inc. | Methods of manufacturing three-dimensional arrays with MTJ devices including a free magnetic trench layer and a planar reference magnetic layer |
US10529915B2 (en) | 2018-03-23 | 2020-01-07 | Spin Memory, Inc. | Bit line structures for three-dimensional arrays with magnetic tunnel junction devices including an annular free magnetic layer and a planar reference magnetic layer |
US10411185B1 (en) | 2018-05-30 | 2019-09-10 | Spin Memory, Inc. | Process for creating a high density magnetic tunnel junction array test platform |
DE102018114159A1 (de) * | 2018-06-13 | 2019-12-19 | Nippon Kornmeyer Carbon Group Gmbh | Plasmaboot zur Aufnahme von Wafern mit regulierter Plasmaabscheidung |
US10600478B2 (en) | 2018-07-06 | 2020-03-24 | Spin Memory, Inc. | Multi-bit cell read-out techniques for MRAM cells with mixed pinned magnetization orientations |
US10559338B2 (en) | 2018-07-06 | 2020-02-11 | Spin Memory, Inc. | Multi-bit cell read-out techniques |
US10593396B2 (en) | 2018-07-06 | 2020-03-17 | Spin Memory, Inc. | Multi-bit cell read-out techniques for MRAM cells with mixed pinned magnetization orientations |
US10692569B2 (en) | 2018-07-06 | 2020-06-23 | Spin Memory, Inc. | Read-out techniques for multi-bit cells |
US10650875B2 (en) | 2018-08-21 | 2020-05-12 | Spin Memory, Inc. | System for a wide temperature range nonvolatile memory |
US10699761B2 (en) | 2018-09-18 | 2020-06-30 | Spin Memory, Inc. | Word line decoder memory architecture |
CN109440084A (zh) * | 2018-09-29 | 2019-03-08 | 东方日升新能源股份有限公司 | 一种用于太阳能电池双面镀膜的石墨舟 |
US11621293B2 (en) | 2018-10-01 | 2023-04-04 | Integrated Silicon Solution, (Cayman) Inc. | Multi terminal device stack systems and methods |
US10971680B2 (en) | 2018-10-01 | 2021-04-06 | Spin Memory, Inc. | Multi terminal device stack formation methods |
US11107979B2 (en) | 2018-12-28 | 2021-08-31 | Spin Memory, Inc. | Patterned silicide structures and methods of manufacture |
CN110646430A (zh) * | 2019-10-29 | 2020-01-03 | 太极半导体(苏州)有限公司 | 一种晶圆检验治具 |
CN111118478A (zh) * | 2019-12-31 | 2020-05-08 | 湖南红太阳光电科技有限公司 | 一种制备异质结电池薄膜的pecvd设备 |
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DE2133876A1 (de) * | 1971-07-07 | 1973-01-18 | Siemens Ag | Anordnung zum eindiffundieren von dotierstoffen |
US4461386A (en) * | 1981-05-13 | 1984-07-24 | Rca Corporation | Rack for transporting recorded discs |
US4661033A (en) * | 1984-08-22 | 1987-04-28 | Pacific Western Systems, Inc. | Apparatus for unloading wafers from a hot boat |
US5356475A (en) * | 1993-02-22 | 1994-10-18 | Lsi Logic Corporation | Ceramic spacer assembly for ASM PECVD boat |
US7055702B1 (en) * | 2000-06-06 | 2006-06-06 | Saint-Gobain Ceramics & Plastics, Inc. | Slip resistant horizontal semiconductor wafer boat |
US20040188319A1 (en) * | 2003-03-28 | 2004-09-30 | Saint-Gobain Ceramics & Plastics, Inc. | Wafer carrier having improved processing characteristics |
CN2713631Y (zh) * | 2004-07-12 | 2005-07-27 | 西安希朗材料科技有限公司 | 传输承载晶片的高纯碳化硅卡座式部件 |
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CN202839564U (zh) * | 2012-08-06 | 2013-03-27 | 京隆科技(苏州)有限公司 | 晶舟的抽片移转治具 |
US20160111319A1 (en) * | 2013-06-06 | 2016-04-21 | Centrotherm Photovoltaics Ag | Retainer, Method For Producing Same And Use Thereof |
KR102143884B1 (ko) * | 2013-09-11 | 2020-08-12 | 삼성전자주식회사 | 버퍼 영역을 갖는 웨이퍼 로더 |
DE102015004419A1 (de) * | 2015-04-02 | 2016-10-06 | Centrotherm Photovoltaics Ag | Waferboot und Plasma-Behandlungsvorrichtung für Wafer |
-
2016
- 2016-04-13 US US15/566,030 patent/US20180119278A1/en active Pending
- 2016-04-13 WO PCT/EP2016/058062 patent/WO2016166125A1/de active Application Filing
- 2016-04-13 CN CN201680034106.0A patent/CN107750282B/zh active Active
- 2016-04-13 TW TW105111560A patent/TWI714574B/zh active
- 2016-04-13 DE DE112016001714.6T patent/DE112016001714A5/de active Pending
Also Published As
Publication number | Publication date |
---|---|
TWI714574B (zh) | 2021-01-01 |
CN107750282A (zh) | 2018-03-02 |
US20180119278A1 (en) | 2018-05-03 |
CN107750282B (zh) | 2019-11-08 |
TW201700779A (zh) | 2017-01-01 |
WO2016166125A1 (de) | 2016-10-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
R082 | Change of representative |
Representative=s name: LIPPERT STACHOW PATENTANWAELTE RECHTSANWAELTE , DE |
|
R012 | Request for examination validly filed | ||
R016 | Response to examination communication |