CN107689341B - 基板载置方法和基板载置装置 - Google Patents

基板载置方法和基板载置装置 Download PDF

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CN107689341B
CN107689341B CN201710661418.0A CN201710661418A CN107689341B CN 107689341 B CN107689341 B CN 107689341B CN 201710661418 A CN201710661418 A CN 201710661418A CN 107689341 B CN107689341 B CN 107689341B
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藤里敏章
芦泽宏明
门田太一
藤井康
布重裕
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Abstract

本发明提供一种能够抑制在将基板载置到载置台时基板偏移的基板载置方法和基板载置装置。在载置台(12)向由各升降销(13)支承的晶片(W)上升的基板处理装置(10)中，在晶片(W)的边缘部抵接到载置台(12)的载置面后，停止载置台(12)的上升，在载置台(12)的上升停止规定时间后，重新开始载置台(12)的上升，之后，反复进行载置台(12)的规定时间的上升停止和载置台(12)的上升的重新开始，直到晶片(W)与载置面的抵接继续进行而使晶片(W)的整个面与载置面完全抵接为止。由此，能够抑制在将基板载置到载置台时基板发生偏移。

Description

基板载置方法和基板载置装置
技术领域
本发明涉及将基板载置到载置台的基板载置方法和基板载置装置。
背景技术
已知一种基板处理装置，其将作为基板的半导体晶片(以下简称为“晶片”。)收纳在腔室内，使用导入腔室内的处理气体和在腔室内产生的等离子体，对晶片实施期望的处理，例如成膜处理、等离子体处理。在该基板处理装置中，当对晶片实施期望的处理时，将晶片载置到作为配置于腔室内的台的载置台。
晶片需要载置到载置台中的晶片的载置面(以下简称为“载置面”)的规定位置，但是，被载置的晶片有时偏离载置面的规定位置。在该情况下，例如在对晶片实施作为成膜处理的热CVD(Chemical Vapor Deposition，化学气相沉积)处理、ALD(Atomic LayerDeposition，原子层沉积)处理时，晶片从内置于载置台的加热器偏离而无法对晶片均等地加热，形成于晶片的膜的厚度变得不均匀。另外，例如，在对晶片实施作为等离子体处理的蚀刻处理时，在晶片的边缘部产生因晶片的偏移导致的阻抗偏差，形成在晶片的表面上的涂料的厚度变得不均匀，无法使晶片的各部中的蚀刻量均匀。
于是，提案有一种技术，即：在载置面设置由直径比晶片的直径稍大的凹陷形成的凹部，在凹部的侧面设置晶片的定位用的突起，在将晶片收纳于凹部时，沿形成在各突起的锥形面使晶片下降，由此能够在凹部内的适当的位置收纳晶片(例如参照专利文献1)。
但是，通常在将晶片载置在载置台的情况下，首先，通过从载置台的载置面向上方突出的多个升降销，从搬送臂接收晶片，在搬送臂从腔室内退出后，通过使升降销下降或者载置台上升，将晶片载置在载置台。
现有技术文献
专利文献
专利文献1：日本特开2000-260851号公报
发明内容
发明要解决的技术问题
但是，在将晶片载置到载置台时，晶片有可能不与载置面均匀地抵接而部分抵接。在该情况下，即使例如在载置面形成有凹部，来自载置面的抵抗力相对于晶片的垂直方向微小地倾斜而作用到晶片，该抵抗力在与晶片平行的方向上的分力作为移动力作用于晶片，存在晶片从载置台的载置面中的规定的位置偏移的问题。尤其是，在晶片大口径化的情况下，伴随晶片与载置面的抵接面积的增加，存在抵抗力以至分力也增加而使晶片的偏移变得显著。
本发明的目的在于提供一种在能够抑制在将基板载置到载置台时基板偏移的基板载置方法和基板载置装置。
用于解决问题的技术方案
为了实现上述目的，本发明的基板载置方法，其特征在于：通过使从载置台中的基板的载置面突出且支承上述基板的多个突起物的从上述载置面起的突出量相对减少，而使上述基板靠近上述载置台来进行载置，在上述基板的至少一部分与上述载置面抵接后，停止上述基板向上述载置台的靠近动作，在上述基板向上述载置台的靠近动作停止后，重新开始上述基板向上述载置台的靠近动作。
发明的效果
根据本发明，在基板的至少一部分抵接到载置面后，停止载置台向基板的靠近动作，在载置台向基板的靠近动作停止后，重新开始载置台向基板的靠近动作，因此，基板暂时静止，通过基板的减震(damping)效应使因基板抵接到载置面引起的抵抗力所产生的基板的振动衰减。由此，能够使抵抗力消除来防止该抵抗力作为基板的移动力发挥作用。其结果是，能够抑制在将基板载置到载置台时基板发生偏移。
附图说明
图1是示意地表示本发明的第一实施方式的内置基板载置装置的基板处理装置的结构的剖视图，图1的(A)是将晶片交接到升降销的情况，图1的(B)表示将晶片载置到载置台的情况。
图2是用于说明在将晶片载置到载置台时晶片从载置面的规定位置偏离的理由的工序图。
图3是表示第一实施方式的基板载置方法的工序图。
图4是图3的基板载置方法的流程图。
图5是图3的基板载置方法的变形例的流程图，图5的(A)表示第一变形例，图5的(B)表示第二变形例。
图6是概略地表示本发明的第二实施方式的内置基板载置装置的基板处理装置的结构的剖视图，图6的(A)表示将晶片交接到升降销的情况，图6的(B)表示将晶片载置到载置台的情况。
图7是表示第二实施方式的基板载置方法的工序图。
图8是图7的基板载置方法的流程图。
图9是图7的基板载置方法的变形例的流程图，图9的(A)表示第一变形例，图9的(B)表示第二变形例。
附图标记的说明
W 晶片
10、60 基板处理装置
12、61 载置台
13、62 升降销。
具体实施方式
以下，参照附图对本发明的实施方式进行说明。
首先，说明本发明的第一实施方式的基板载置装置和基板载置方法。
图1是概略地表示本实施方式的内置基板载置装置的基板处理装置的结构的剖视图，图1的(A)表示将晶片交接到升降销的情况，图1的(B)表示将晶片载置到载置台的情况。
在图1的(A)和图1的(B)中，基板处理装置10包括：收纳晶片的框体状的腔室11；配置在腔室11内的下方的台状的载置台12；从由载置台12的上表面形成的晶片的载置面向上方突出的多个例如3个升降销13(突起物)(仅图示2个)。此外，载置台12和各升降销13构成本实施方式的基板载置装置。在腔室11的侧壁设置有作为开口的门14，保持晶片W的搬送臂15经该门14进入腔室11内。门14的高度与各升降销13的顶端的高度大致一致，因此，由搬送臂15保持的晶片W在腔室11内位于各升降销13的顶端的附近且上方，通过使搬送臂15稍微下降或者升降销13稍微上升，而将晶片W交接到各升降销13。将晶片W交接到了各升降销13的搬送臂15从腔室11内退出。另外，在腔室11的侧方设置有可将门14自由开闭的闸阀16，搬送臂15从腔室11内退出时，闸阀16封闭门14。
各升降销13从腔室11的底部立起设置，在上下方向贯通载置台12。各升降销13构成为不移动，而载置台12构成为能够在上下方向移动，在各升降销13支承晶片W后，载置台12向上方移动(上升)，由此，使被支承的晶片W靠近载置台12的载置面，原样地将晶片W载置到载置面。载置台12内置加热器和制冷剂流路(均没有图示)，来控制被载置的晶片W的温度。此外，各升降销13也可以构成为能够上下移动。
另外，基板处理装置10包括处理气体导入机构、排气机构、等离子体产生机构(均未图示)，例如在将腔室11内减压的基础上，通过处理气体和等离子体对晶片W实施期望的处理例如成膜处理、等离子体处理。
但是，在基板处理装置10中，为了将晶片W稳定地载置到载置台12的载置面，而以载置面与由各升降销13的顶端形成的假想平面(以下称为“晶片支承面”。)平行的方式配置各升降销13和载置台12。但是，因各升降销13和载置台12的机械上的公差以及载置台12的移动时的松动，载置面与晶片支承面变得不完全平行，例如存在晶片支承面相对于载置面微小倾斜的情况(图2的(A))。在该情况下，当载置台12上升使晶片W靠近载置面即进行靠近动作时，晶片W的整体不会同时与载置面抵接，晶片W的一部分例如晶片W的边缘部最先抵接到载置面(图2的(B))。此时，在晶片W的边缘部作用由抵接引起的抵抗力N，但是抵抗力N相对于载置面垂直地作用。另一方面，如上述方式，晶片支承面相对于载置面微小地倾斜，所以晶片W也相对于载置面倾斜。因此，抵抗力N不是相对于晶片W垂直地作用，而是相对于晶片W的垂直方向微小倾斜地作用，所以抵抗力N的分力F对于晶片W在水平方向上作为移动力发挥作用，晶片W在水平方向上偏移。
接着，在继续载置台12的上升而使晶片W与载置面的抵接进行的期间，伴随进行的抵接而使抵抗力N持续作用于晶片W，因此分力F对于晶片W在水平方向上作为移动力继续作用(图2的(C))。另外，当晶片W与载置面的抵接的进行不中断地继续时，存在气体例如处理气体或稀释气体有可能残留在晶片W与载置面之间的情况。在该情况下，尤其是为了对晶片W实施期望的处理而将腔室11内减压时，在晶片W与载置面之间以及腔室11内的圧力差变大，晶片W变得容易从载置面浮起而发生偏移，因此，进一步助长了因上述的移动力导致的晶片W的水平方向的偏移。其结果是晶片W在水平方向较大地移动，有可能使晶片W从载置面的规定的位置偏离。
在本实施方式中，应对上述问题，防止在载置台12上升时分力F作用于晶片W。
图3是表示本实施方式的基板载置方法的工序图，图4是图3的基板载置方法的流程图。
首先，晶片W被交接到各升降销13，当各升降销13支承晶片W时，载置台12上升至晶片W的边缘部抵接到载置面为止(图3的(A))。当晶片W的边缘部抵接到载置面时，来自载置面的抵抗力N作用到晶片W(图3的(B))。通常，当对板状物施加有外力时，该板状物振动。即，在板状物上外力被转换为振动，在本实施方式中，作用在晶片W的抵抗力N被转换为晶片W的振动(图3的(C))。另一方面，在本实施方式中，当晶片W的边缘部抵接到载置面时，载置台12暂时停止上升。通常，持续使板状物静止时，该板状物的振动因板状物的减震效应而衰减，当载置台12暂时停止上升时，晶片W与载置面的抵接的进行被中断而使晶片W静止。另外，在本实施方式中，载置台12的上升的停止继续规定的时间例如0.5秒。也就是，由于晶片W持续静止规定的时间，因此从抵抗力N转换来的晶片W的振动因晶片W的减震效应而衰减。因此，在本实施方式中，因晶片W的边缘部抵接到载置面而产生的抵抗力N被转换为晶片W的振动后，被衰减而消失。
接着，载置台12的上升的停止持续规定的时间后，重新开始载置台12的上升，当载置台12上升规定量例如0.1mm时，再次使上升停止规定的时间。此时，对于晶片W而言，伴随晶片W与载置面的抵接的进行，抵抗力N作用于晶片W(图3的(D))，作用于晶片W的抵抗力N被转换为晶片W的振动(图3的(E))，但是，在此，晶片W持续静止规定的时间，因此，从抵抗力N转换来的晶片W的振动因晶片W的减震效应而衰减。因此，本实施方式中，伴随晶片W与载置面的抵接的进行而产生的抵抗力N被转换为晶片W的振动后，被衰减而消失。
之后，载置台12的上升停止规定的时间和载置台12的上升的重新开始反复进行，直到晶片W与载置面的抵接进行而使晶片W的整个面与载置面完全抵接为止(图4)。此外，载置台12的上升反复停止时的停止的规定时间全部设定为相同的时间，例如0.5秒。
根据本实施方式，在晶片W的边缘部抵接到载置面后，使载置台12的上升停止，在规定的时间内使载置台12的上升停止后，使载置台12的上升重新开始。即，使载置台12的上升停止时晶片W持续静止规定的时间，因此，由于晶片W抵接到载置面引起的抵抗力N所产生的晶片W的振动因晶片W的减震效应而衰减，能够使抵抗力N消失。接着，在晶片W与载置面的抵接进行的期间，反复进行载置台12的上升的停止和载置台12的上升的重新开始，所以每当晶片W与载置面的抵接进行而产生抵抗力N时，通过使由该抵抗力N产生的晶片W的振动衰减，能够使抵抗力N消除。由此，能够防止抵抗力N作为晶片W的水平方向上的移动力而起作用。其结果是，能够抑制当将晶片W载置到载置台12时晶片W从载置面的规定的位置偏离。
另外，本实施方式中，在晶片W的边缘部抵接到载置面后，或晶片W与载置面的抵接进行的期间，使载置台12的上升停止规定的时间，因此，晶片W与载置面的靠近动作停止规定的时间，能够使气体从晶片W与载置面之间充分扩散。其结果，能够防止气体残留在晶片W与载置面之间，即使在腔室11内在减压环境下也能够防止晶片W从载置面浮起而偏离。
在上述的本实施方式中，载置台12的上升反复停止时的停止的规定的时间全部设为相同的时间，但是，首次晶片W抵接到载置面时的抵抗力N被认为比之后的因晶片W与载置面的抵接进行而引起的抵抗力N大，因此，优选将首次晶片W抵接到载置面时的载置台12的上升的停止时间设为比之后的载置台12的上升的停止时的停止时间长(图5的(A))。由此，能够使因首次晶片W抵接到载置面时的较大的抵抗力N而产生的晶片W的较大的振动可靠地衰减。另外，认为首次晶片W抵接到载置面后的晶片W与载置面的抵接进行引起的抵抗力N非常小，因此，也可以仅在首次晶片W抵接到载置面时使载置台12的上升停止规定的时间(图5的(B))。由此，能够缩短晶片W载置到载置台12所需的时间，从而能够提高生产能力。
并且，在上述的本实施方式中，在晶片W的边缘部抵接到载置面后首次使载置台12的上升停止，但是，由于晶片W的边缘部有可能因晶片W和/或载置台12的热膨胀而比设想更早地抵接到载置面，因此也可以在晶片W的边缘部抵接到载置面之前就开始反复进行载置台12的上升停止规定的时间和载置台12的上升的重新开始。
接着，说明本发明的第二实施方式的基板载置装置和基板载置方法。
本实施方式的结构、作用与上述第一实施方式基本相同，所以省略重复的结构、作用的说明，以下对不同的结构、作用进行说明。
图6是概略地表示内置本实施方式的基板载置装置的基板处理装置的结构的剖视图，图6的(A)表示将晶片交接到升降销的情况，图6的(B)表示将晶片载置到载置台的情况。
在图6的(A)和图6的(B)中，基板处理装置60包括：配置在腔室11内的下方的台状的载置台61(载置台)；从由载置台61的上表面形成的晶片的载置面向上方突出的多个例如3个升降销62(突起物)(仅图示2根)。此外，载置台61和各升降销62构成本实施方式的基板载置装置。突出时的各升降销62的顶端的高度与门14的高度大致一致，因此，在保持于搬送臂15的晶片W在腔室11内位于各升降销62的顶端的附近且上方，搬送臂15稍微地下降或者升降销62稍微地上升，从而将晶片W交接到各升降销62。
载置台61构成为在上下方向上不移动，而各升降销62构成为通过内置在载置台61的上下机构而能够在上下方向上移动，各升降销62支承晶片W后向下方移动(下降)，由此使被支承的晶片W靠近载置台61的载置面，原样地将晶片W载置到载置面。
图7是表示本实施方式的基板载置方法的工序图，图8是图7的基板载置方法的流程图。
首先，晶片W被交接到各升降销62，当各升降销62支承晶片W时，支承的晶片W的边缘部下降至与载置面抵接为止(图7的(A))。
接着，当晶片W的边缘部抵接到载置面时，来自载置面的抵抗力N1作用于晶片W(图7的(B))，该抵抗力N1被转换为晶片W的振动(图7的(C))。在此，当晶片W的边缘部抵接到载置面时，各升降销62暂时停止下降而使晶片W静止，使下降的停止持续规定的时间。即，在本实施方式中，也使晶片W持续静止规定的时间，因此，因晶片W的边缘部抵接到载置面而产生的抵抗力N1被转换为晶片W的振动后，因晶片W的减震效应而衰减被消除。
接着，在各升降销62的下降的停止继续规定的时间后，使各升降销62的下降重新开始，在各升降销62下降规定量时，再次使下降停止规定的时间。此时，关于晶片W，伴随晶片W与载置面的抵接的进行，抵抗力N1作用在晶片W(图7的(D))，作用于晶片W的抵抗力N1被转换为晶片W的振动(图7的(E))，在此，也使晶片W持续静止规定的时间，因此，从抵抗力N1转换的晶片W的振动因晶片W的减震效应而衰减。因此，在本实施方式中，伴随晶片W与载置面的抵接的进行而产生的抵抗力N1被转换为晶片W的振动后，也被衰减而消除。
之后，各升降销62的下降停止规定的时间和各升降销62的下降的重新开始反复进行，直到晶片W与载置面的抵接进行而使晶片W的整个面与载置面完全抵接(图8)。此外，各升降销62的下降反复停止时停止的规定的时间也与第一实施方式同样全部设定为相同的时间。
根据本实施方式，在晶片W的边缘部抵接到载置面后，使各升降销62的下降停止而使晶片W持续静止规定的时间，因此，通过使因抵抗力N1产生的晶片W的振动衰减，能够消除抵抗力N1。并且，在晶片W与载置面的抵接进行的期间，反复各升降销62的下降的停止和各升降销62的下降的重新开始，因此，每当晶片W与载置面的抵接进行而产生抵抗力N1时，通过使因该抵抗力N1产生的晶片W的振动衰减，能够消除抵抗力N1。由此，能够防止抵抗力N1作为晶片W的水平方向上的移动力而起作用。
另外，本实施方式中，在晶片W的边缘部抵接到载置面后，或晶片W与载置面的抵接进行的期间，使各升降销62的下降停止规定的时间，因此，能够防止气体残留在晶片W与载置面之间。
在上述的本实施方式中，各升降销62的下降反复停止时停止的规定时间全部设置为相同的时间，但是，也可以将首次晶片W抵接到载置面时的各升降销62的下降的停止时间设定成比之后的各升降销62的下降停止时的停止时间长(图9的(A))，另外，也可以仅在首次晶片W抵接到载置面时使各升降销62的下降停止规定的时间(图9的(B))。并且，也可以在晶片W的边缘部抵接到载置面之前就开始反复进行各升降销62的下降停止规定的时间和各升降销62的下降的重新开始。
以上，关于本发明使用上述各实施方式进行了说明，但是，本发明不限于上述各实施方式。
例如在上述各实施方式中，使晶片W载置到载置台12(61)，但是，上述各实施方式的基板载置方法与板状物的种类无关，能够在将该板状物载置到台状物时使用。尤其是，在板状物为FPD(Flat Panel Display，平板显示器)的情况下，FPD远大于晶片，与台状物局部抵接而引起位置偏移的可能较高，因此，通过应用上述各实施方式的基板载置方法来抑制位置偏移所获得的好处，远大于对晶片使用上述各实施方式的基板载置方法的情况下的好处。
另外，在上述各实施方式中，腔室11内被减压，但是即使腔室11内不被减压，也可以应用上述各实施方式的基板载置方法，能够抑制晶片W在水平方向上偏移。
并且，本发明的目的也可以通过将记录有实现上述各实施方式的功能的软件的程序编码的存储介质提供到基板处理装置10、60的控制部(未图示)，使该控制部的CPU读取收纳于存储介质中的程序编码并执行该程序编码来实现。
在该情况下，从存储介质读取的程序编码自身实现上述各实施方式的功能，程序编码和存储有该程序编码的存储介质构成本发明。
另外，作为用于提供程序编码的存储介质，例如可以为RAM、NV-RAM、软盘(注册商标)、硬盘、光盘、CD-ROM、CD-R、CD-RW、DVD(DVD-ROM、DVD-RAM、DVD-RW、DVD+RW)等的光盘、磁带、非易失性存储卡、其它的ROM等的能够存储上述程序编码的介质。或者，上述程序编码也可以通过从与互联网、商用网络或局域网等连接的未图示的其它的计算机、数据库等下载而提供到上述控制部。
另外，不仅通过执行CPU读取的程序编码来实现上述各实施方式的功能，而且还包含以下情况，即：基于该程序编码的指示，使在CPU上运行的OS(操作系统)等进行实际的处理的一部分或者全部，通过该处理实现上述各实施方式的功能。
并且，还包含以下情况，即：从存储介质读取的程序编码，在被写入与上述控制部连接的功能扩展卡或功能扩展单元所具备的存储器后，基于该程序的编码的指示，使该功能扩展卡或功能扩展单元所具备的CPU等进行实际的处理的一部分或者全部，通过该处理实现上述各实施方式的功能。
上述程序编码的方式可以由目标代码、通过解释程序执行的程序编码、供给到OS的脚本数据等的方式形成。

Claims (8)

1.一种基板载置方法，其特征在于：
通过使从载置台中的基板的载置面突出且支承所述基板的多个突起物的从所述载置面起的突出量相对减少，而使所述基板靠近所述载置台来载置到所述载置台，
在所述基板的至少一部分抵接到所述载置面后，使所述基板向所述载置台的靠近动作停止规定时间，以使来自所述载置面的抵抗力所引起的所述基板的振动衰减，
在所述基板向所述载置台的靠近动作停止了所述规定时间后，在所述基板的至少一部分抵接于所述载置面的状态下重新开始所述基板向所述载置台的靠近动作。
2.如权利要求1所述的基板载置方法，其特征在于：
反复进行所述基板向所述载置台的靠近动作的停止和重新开始。
3.如权利要求2所述的基板载置方法，其特征在于：
首次的所述基板向所述载置台的靠近动作停止时的停止时间，比之后的所述基板向所述载置台的靠近动作停止时的停止时间长。
4.如权利要求1至3中任一项所述的基板载置方法，其特征在于：
通过使所述载置台向由所述多个突起物支承的所述基板上升，而使所述基板靠近所述载置台。
5.如权利要求1至3中任一项所述的基板载置方法，其特征在于：
通过使所述多个突起物向所述载置台下降，而使所述基板靠近所述载置台。
6.如权利要求1至3中任一项所述的基板载置方法，其特征在于：
使所述基板在减压环境下靠近所述载置台来将所述基板载置到所述载置台。
7.一种基板载置装置，其特征在于，包括：
载置台；和
从所述载置台中的基板的载置面突出且支承所述基板的多个突起物，
通过使所述载置台向由所述多个突起物支承的所述基板上升，而使所述基板载置到所述载置台，
在所述基板的至少一部分抵接到所述载置面后，使所述载置台的上升停止规定时间，以使来自所述载置面的抵抗力所引起的所述基板的振动衰减，
在所述载置台的上升停止了所述规定时间后，在所述基板的至少一部分抵接于所述载置面的状态下重新开始所述载置台的上升。
8.一种基板载置装置，其特征在于，包括：
载置台；和
从所述载置台中的基板的载置面突出且支承所述基板的多个突起物，
通过使所述多个突起物向所述载置台下降，而使所述基板载置到所述载置台，
在所述基板的至少一部分抵接到所述载置面后，使所述多个突起物的下降停止规定时间，以使来自所述载置面的抵抗力所引起的所述基板的振动衰减，
在所述多个突起物的下降停止了所述规定时间后，在所述基板的至少一部分抵接于所述载置面的状态下重新开始所述多个突起物的下降。
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