CN107624268B - 用于表面处理的线性介质阻挡放电等离子体发生装置 - Google Patents

用于表面处理的线性介质阻挡放电等离子体发生装置 Download PDF

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Publication number
CN107624268B
CN107624268B CN201680028625.6A CN201680028625A CN107624268B CN 107624268 B CN107624268 B CN 107624268B CN 201680028625 A CN201680028625 A CN 201680028625A CN 107624268 B CN107624268 B CN 107624268B
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electrode
power
grounding electrode
power electrode
dielectric barrier
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CN107624268A (zh
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林裕奉
李元吾
朴相厚
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Plasmapp Co Ltd
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Plasmapp Co Ltd
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
CN201680028625.6A 2015-05-20 2016-05-18 用于表面处理的线性介质阻挡放电等离子体发生装置 Active CN107624268B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1020150070145A KR101682903B1 (ko) 2015-05-20 2015-05-20 표면 처리용 선형 유전체 장벽 방전 플라즈마 발생장치
KR10-2015-0070145 2015-05-20
PCT/KR2016/005218 WO2016186431A1 (ko) 2015-05-20 2016-05-18 표면 처리용 선형 유전체 장벽 방전 플라즈마 발생장치

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CN107624268A CN107624268A (zh) 2018-01-23
CN107624268B true CN107624268B (zh) 2019-11-05

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JP (1) JP6788615B2 (enrdf_load_stackoverflow)
KR (1) KR101682903B1 (enrdf_load_stackoverflow)
CN (1) CN107624268B (enrdf_load_stackoverflow)
WO (1) WO2016186431A1 (enrdf_load_stackoverflow)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111278766B (zh) * 2018-02-09 2023-05-23 中国石油化工股份有限公司 低温等离子体反应设备和分解硫化氢的方法
CN110124482A (zh) * 2018-02-09 2019-08-16 中国石油化工股份有限公司 低温等离子体反应器和分解硫化氢的方法
KR102024568B1 (ko) 2018-02-13 2019-09-24 한국기초과학지원연구원 환형 면방전 플라즈마 장치를 이용한 점상 식각 모듈 및 점상 식각 모듈의 식각 프로파일을 제어하는 방법
KR102376127B1 (ko) * 2018-05-30 2022-03-18 도시바 미쓰비시덴키 산교시스템 가부시키가이샤 활성 가스 생성 장치
DE102019101063B4 (de) * 2019-01-16 2021-02-25 Cinogy Gmbh Plasma-Behandlungsanordnung und Verfahren zur Anpassung der Größe einer Auflagefläche der Plasma-Behandlungsanordnung an die Größe der zu behandelnden Oberfläche
CN110035594B (zh) * 2019-03-18 2021-04-13 西安交通大学 基于介质阻挡放电等离子体的材料改性装置、系统及方法
CN115717233B (zh) * 2022-04-14 2025-05-27 南京工业大学 一种多模式低温等离子体金属表面薄膜沉积装置及方法

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KR19990009578A (ko) * 1997-07-03 1999-02-05 지종기 진공 분위기를 형성하여 전극의 내구성을 높인 고온 직류 플라즈마 토취
CN1254250A (zh) * 1998-10-26 2000-05-24 松下电工株式会社 等离子体处理装置及用这种装置进行等离子体处理的方法
CN1283076A (zh) * 1999-07-27 2001-02-07 松下电工株式会社 用于产生等离子体的电极、使用该电极的等离子体处理设备以及利用该设备的等离子体处理
JP2002018276A (ja) * 2000-07-10 2002-01-22 Pearl Kogyo Kk 大気圧プラズマ処理装置
JP2003208999A (ja) * 2002-01-10 2003-07-25 Sekisui Chem Co Ltd 放電プラズマ処理方法及びその装置
CN1826843A (zh) * 2003-07-23 2006-08-30 积水化学工业株式会社 等离子处理装置和电极结构
CN101277575A (zh) * 2007-03-28 2008-10-01 赖中平 在彩色滤光片上提高喷墨打印产出量率的制程方法及其装置
CN101296549A (zh) * 2003-05-14 2008-10-29 积水化学工业株式会社 等离子处理设备及其制作方法
CN103889138A (zh) * 2012-12-24 2014-06-25 中国科学院微电子研究所 等离子体放电装置

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KR20030091438A (ko) * 2002-05-28 2003-12-03 (주)플라젠 플라즈마 분사장치 및 그 장치를 이용한 표면처리방법
JP2006040667A (ja) 2004-07-26 2006-02-09 Sharp Corp プラズマ表面処理装置
KR100789562B1 (ko) * 2005-12-01 2007-12-28 주식회사 엘지화학 금속적층판의 제조방법 및 이에 의해 제조된 금속적층판
KR100760551B1 (ko) * 2006-06-27 2007-09-20 주식회사 에이피피 상압 플라즈마 발생장치
KR101092963B1 (ko) * 2010-01-26 2011-12-12 비아이 이엠티 주식회사 대기압 플라즈마 발생장치

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990009578A (ko) * 1997-07-03 1999-02-05 지종기 진공 분위기를 형성하여 전극의 내구성을 높인 고온 직류 플라즈마 토취
CN1254250A (zh) * 1998-10-26 2000-05-24 松下电工株式会社 等离子体处理装置及用这种装置进行等离子体处理的方法
CN1283076A (zh) * 1999-07-27 2001-02-07 松下电工株式会社 用于产生等离子体的电极、使用该电极的等离子体处理设备以及利用该设备的等离子体处理
JP2002018276A (ja) * 2000-07-10 2002-01-22 Pearl Kogyo Kk 大気圧プラズマ処理装置
JP2003208999A (ja) * 2002-01-10 2003-07-25 Sekisui Chem Co Ltd 放電プラズマ処理方法及びその装置
CN101296549A (zh) * 2003-05-14 2008-10-29 积水化学工业株式会社 等离子处理设备及其制作方法
CN1826843A (zh) * 2003-07-23 2006-08-30 积水化学工业株式会社 等离子处理装置和电极结构
CN101277575A (zh) * 2007-03-28 2008-10-01 赖中平 在彩色滤光片上提高喷墨打印产出量率的制程方法及其装置
CN103889138A (zh) * 2012-12-24 2014-06-25 中国科学院微电子研究所 等离子体放电装置

Also Published As

Publication number Publication date
CN107624268A (zh) 2018-01-23
JP6788615B2 (ja) 2020-11-25
KR20160136551A (ko) 2016-11-30
WO2016186431A1 (ko) 2016-11-24
JP2018521454A (ja) 2018-08-02
KR101682903B1 (ko) 2016-12-20

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