CN107624268B - Linear medium barrier discharge plasma generating device for surface treatment - Google Patents
Linear medium barrier discharge plasma generating device for surface treatment Download PDFInfo
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- CN107624268B CN107624268B CN201680028625.6A CN201680028625A CN107624268B CN 107624268 B CN107624268 B CN 107624268B CN 201680028625 A CN201680028625 A CN 201680028625A CN 107624268 B CN107624268 B CN 107624268B
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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Abstract
The present invention provides a kind of dielectric barrier discharge plasma generation device.The dielectric barrier discharge plasma generation device includes: power electrode comprising the corner extended in a first direction；Grounding electrode, it is spaced apart with the power electrode, to expose the corner of the power electrode and extend in a first direction；Dielectric barrier between the power electrode and the grounding electrode, and is arranged to surround the corner of the power electrode；Multiple nozzles are formed in the grounding electrode, are spaced from each other a distance in a first direction and are configured to spray gas towards the corner of the power electrode；And AC power source, it is configured to supply AC power to the power electrode.Dielectric barrier discharge can be carried out on the corner of the power electrode.
Description
Technical field
This disclosure relates to using the linear plasma generation device of dielectric barrier discharge (DBD) under atmospheric pressure, it is special
It is not to be related to a kind of linear plasma generation device below, is configurable to include power electrode, grounding electrode and therebetween
Dielectric barrier, and use the surface of atmospheric plasma treatment chip or film.
Background technique
Korean Patent No.10-0760551 discloses a kind of plasma system, can be used for be surface-treated and by
It is configured to uniformly and firmly generate large area plasma at atmosheric pressure.The system can be configurable to include by
Distribution road direction its apply radio-frequency power rodlike first electrode, in the longitudinal direction with first electrode it is spaced apart with formed
The second electrode of discharge space and be configured to steadily around first electrode to realize plasma discharge medium resistance
Barrier.However, in Korean Patent No.10-0760551, it may be by the surface of the dielectric material around first electrode
The charge of accumulation and locally generate electric field, to generate electric arc between target object at it and cause product failure.Especially
Ground, in the engaging process of the partition of secondary cell, using atmospheric pressure plasma surface treatment can thin medium every
It is carried out on plate to improve adhesion characteristic, and if generating electric arc, aperture may be formed in the film, and become product failure
Immediate cause.
The plasma generating device using indirect mediators barrier discharge is proposed, as controlling by plasma electricity
The plasma surface treatment technology that arc causes failure to occur.In the apparatus, apply the electrode section of high voltage by dielectric layer
It surrounds, and electrode section and dielectric layer are surrounded by shell.Accordingly it is possible to prevent high potential is exposed to outside, and can be with
Prevent electric arc from generating in the external of device.In the art, the plasma processing gas manufactured in the apparatus is with the side of injection
Formula is for being surface-treated.
Korean Patent No.10-1503906 discloses a kind of plasma reactor using Remote plasma, uses
In being surface-treated and target object prevented to be destroyed.In general, plasma reactor may include the shell for being connected to grounding electrode
It is body, the setting electrode section for being applied with radio-frequency power in the housing, the dielectric barrier for surrounding electrode section, active with application
The electrode section and dielectric barrier of rate lower section grounding electrode part spaced apart.Here, multiple holes are formed to spray
The atmospheric pressure plasma and gas manufactured between lower section grounding electrode part and the electrode section for being applied with power, and
The surface of target object (for example, film) is handled indirectly by the twilight sunset in injection gas.However, according to Korean Patent
The generation of electric arc can be effectively reduced by Remote plasma by No.10-1503906, but Remote plasma is on surface
Lead to low-down efficiency in treatment process.I.e., it is difficult to ensure high production rate.
In the routine techniques using DBD, propose for large-duty direct processing method and for stability
Indirect processing method.However, it is difficult to ensure high production rate and high stability simultaneously.
Therefore, it is necessary to a kind of technologies of plasma generating device, are carried out at plasma surface using direct DBD
Reason, while preventing electric arc from occurring or ensuring Treatment Stability.
Therefore, present inventor has performed many researchs, can be in the plasma using direct dielectric barrier discharge with exploitation
The plasma generating device of the surface stored charge of capture accumulation onto a media surface in response in body treatment process.As a result, of the invention
It has been completed medium barrier plasma generation device, allows stable plasma discharge and high production rate.
Summary of the invention
Technical problem
Some embodiments of present inventive concept provide a kind of direct plasma generation device using direct DBD.
The device can be configured to carry out stable plasma surface treatment by the charge of capture surface accumulation.
Some embodiments of present inventive concept provide a kind of direct plasma generation device, are not used only directly
Plasma discharge, and twilight sunset is used, to provide the production efficiency for being higher than conventional direct plasma generation device.
Other objects and advantages of the present invention will be apparent for those skilled in the art from following explanation.
Technical solution
The some embodiments conceived according to the present invention, dielectrically impeded discharge plasma generating device may include: function
Rate electrode comprising the corner extended in a first direction；Grounding electrode, it is spaced apart with the power electrode, with
Expose the corner of the power electrode and extends in a first direction；Dielectric barrier, between the power electrode and described
Between grounding electrode, and it is arranged to surround the corner of the power electrode；Multiple nozzles are formed in the grounding electrode
In, be spaced from each other a distance in a first direction and be configured to towards the power electrode corner spray gas；With
AC power source is configured to supply AC power to the power electrode.It can be carried out on the corner of the power electrode
Dielectric barrier discharge.
In some embodiments, the power electrode can have isoceles triangle prism shape, and power electricity
The apex angle of pole can be 30 °~90 °.
In some embodiments, the nozzle may include being configured to be parallel to before spraying gas by it
The mobile part in the surface of the dielectric barrier.
In some embodiments, the diameter of the nozzle can be 0.5mm~1mm.
In some embodiments, the distance between the vertex of the dielectric barrier and the nozzle can for 1mm~
30mm。
In some embodiments, the part for being provided with the nozzle of the grounding electrode can along a first direction by
Chamfering.
In some embodiments, the dielectric barrier can also be outer including being arranged to contact with the grounding electrode
Conductive layer.
In some embodiments, the dielectric barrier can also include in being arranged to contact with the power electrode
Conductive layer.
In some embodiments, the grounding electrode may include the left ground connection that the left side of the power electrode is arranged in
Electrode may include being formed in the left ground connection with the right grounding electrode on the right side that the power electrode is arranged in and the nozzle
Multiple left nozzles in electrode and the multiple right nozzles being formed in the right grounding electrode.
In some embodiments, the left nozzle and the right nozzle can be configured in a first direction each other partially
It moves.
In some embodiments, the left grounding electrode may include formed therein and prolong on along a first direction
The left gas buffer space stretched, the right grounding electrode may include right gas that is formed therein and extending in a first direction
Cushion space.The left cushion space can have two gases that are relative to each other and allowing to supply gas in a first direction and enter
Mouthful and the right cushion space can have the center positioned at the right cushion space and allow perpendicular to the of first direction
The gas access of gas is supplied on two directions.
In some embodiments, the thickness of the dielectric barrier can be 0.5mm~2mm.
In some embodiments, the power electrode can have isoceles triangle prism shape.Described device can be with
Include: assist medium barrier layer, the side in face of the vertex of the power electrode is set；With grounding electrode lid, setting
The separate section of the grounding electrode to be connected to each other on the assist medium barrier layer.The assist medium barrier layer
Thickness can be 30mm or more.
Invention effect
The some embodiments conceived according to the present invention provide the linear plasma generation device using direct DBD.
Linear plasma generation device can be used for continuously handling with large-sized linear substrate or film.It is generated in plasma
In device, the grounding electrode for capturing the charge being accumulated on the surface of dielectric barrier is configured to and dielectric barrier
Surface contact, therefore in the case where the not arc discharge as caused by the stored charge of surface, steadily carry out surface treatment work
Skill.The surface of dielectric material can be coated with conductive layer, therefore the charge of surface accumulation can be moved along conductive layer to inhibit
The generation of arc discharge.
Plasma generates in unintended areas or prevents parasitic discharges in order to prevent, can be on the surface of dielectric material
Upper deposition or type metal film, and metallic film can permit the boundary for the gap area that may be formed in the fabrication process
In equipotential state.Therefore, parasitic discharges can be entirely prevented.
Plasma generating device may include triangular power electrode, around power electrode dielectric barrier, surround
Dielectric barrier in addition to region of discharge is (for example, " T "-shape stenosis area as defined by the line connected along vertex of a triangle
Domain) except outer surface grounding electrode and multiple nozzles for being formed in grounding electrode.Processing gas can be supplied by nozzle
Body, and DBD can be carried out in region of discharge.
For the surface treatment carried out by direct plasma electric discharge, the chamfering open zone of grounding electrode can be expanded
Domain, and in this case, it is contemplated that plasma discharge to the surface of the dielectric material in open area and by
The effect of twilight sunset caused by fluid flows.
In order to which homogeneous plasma discharges and is surface-treated, the nozzle in the apparent surface of grounding electrode is formed in each other
The form setting in the multiple holes intersected.In addition, the space uniform of gas injection can be improved by changing gas jet process
Property.For example, gas injection at the surface of grounding electrode is in the case where opposed end carries out, in another table of grounding electrode
The gas injection in face can carry out in center, linear space uniformity is significantly increased.
The plasma generating device for some embodiments conceived according to the present invention can be used DBD carry out directly etc.
Gas ions surface treatment.Since grounding electrode is configured to contact with the surface of dielectric barrier, grounding electrode can be caught
The charge being accumulated on the surface of dielectric barrier is obtained, to prevent the generation of electric arc.Therefore, it can steadily carry out direct etc.
Gas ions process of surface treatment.Furthermore, it is possible to ensure the reliability of the batch production of plasma generating device.In addition, being situated between
The electric discharge occurred on the surface on matter barrier layer can be used for the twilight sunset of supply gas, to improve treatment effeciency.Therefore, with routine
Technology is compared, and a kind of dielectric barrier discharge plasma generation device being surface-treated with high efficiency can be provided.
In addition, the method for mutually compensating can be used to improve plasma in the method by symmetrical plane supply gas
The spatially uniform that body generates, and the surface for being parallel to dielectric barrier and the layer in crisscross upper supply can be used
Stream, to improve the expansion efficiency of plasma gas.It is, therefore, possible to provide efficient dielectric barrier discharge plasma produces
Generating apparatus.
Detailed description of the invention
Fig. 1 is the schematic diagram for showing the DBD plasma production system for some embodiments conceived according to the present invention.
Fig. 2 is the concept map for showing the DBD plasma generating device for some embodiments conceived according to the present invention.
Fig. 3 is the sectional view for showing the DBD plasma generating device for other embodiments conceived according to the present invention.
Fig. 4 is the figure for showing the dielectric barrier of plasma generating device of Fig. 3.
Fig. 5 is the sectional view for showing the DBD plasma generating device for other embodiments conceived according to the present invention.
Fig. 6 is the plan view for showing the plasma generating device of Fig. 5.
Fig. 7 is the curve graph for showing variation of the flow with nozzle location.
Specific embodiment
In common dielectric barrier discharge (DBD), diaphragm may be destroyed by plasma source, and this may cause production
Product failure.The surface stored charge accumulated on the surface of plasma source dielectric barrier there may be high local fields, from
And generate the electric arc of high current density.In DBD, electric current can be stopped by dielectric layer to be formed and be accumulated on dielectric material surface
Surface stored charge.Therefore, arc discharge is likely to become the reason of film destroys.Arc discharge may be that main failure is former
Cause, and solution may be to inhibit the formation of storage charge.
Due to the microlesion on the surface of ceramic material, dielectric barrier is there may be high local fields, and electric field
The electric arc of high current density may be generated.In the case where dielectric impedance material has surface damage, failure may be will increase
Rate.
Due to the generation of the electric arc as caused by storage charge or surface charge, conventional direct DBD method may have low
Stability.In addition, the indirect DBD method for using twilight sunset, it may be difficult to obtain the uniformity of the flow velocity of injection gas, therefore
The spatially uniform being difficult to ensure in surface treatment process.It is likely lower than directly using the productivity of the indirect DBD method of twilight sunset
DBD method.
The DBD plasma generating device for the exemplary implementation scheme conceived according to the present invention can be configured to by catching
Surface charge is obtained to ensure stability, to realize high production rate by direct DBD method, and productivity is improved by twilight sunset
And uniformity.
In the plasma generating device for the exemplary implementation scheme conceived according to the present invention, when the electricity that high voltage applies
The distance between pole and pedestal increase when, plasma discharge is likely to occur on the surface of dielectric barrier, and due to by
Twilight sunset caused by rapid fluid stream, hydrophilicity-imparting treatment process can the target object being set on pedestal exposing surface it is enterprising
Row.
The exemplary implementation scheme of present inventive concept is more fully described below with reference to accompanying drawings, is shown in the attached drawings and shows
Example property embodiment.However, the exemplary implementation scheme of present inventive concept can be embodied in many different forms, and do not answer
It is construed as limited to embodiment set forth herein；On the contrary, thesing embodiments are provided so that the disclosure is sufficiently and complete, and will
The design of exemplary implementation scheme is comprehensively communicated to those of ordinary skill in the art.In the accompanying drawings, for the sake of clarity, respectively
The thickness of layer and region is amplified.Identical appended drawing reference indicates identical element in the accompanying drawings, therefore the description thereof will be omitted.
Fig. 1 is the schematic diagram for showing the DBD plasma production system for some embodiments conceived according to the present invention.
Referring to Fig.1, DBD plasma generating system may include with the diaphragm of cylindrical wound, the roller for conveying diaphragm
It son 90 and is configured to carry out the diaphragm of conveying the plasma generating device 100 of hydrophilicity-imparting treatment.It can be provided in thereon
The diaphragm of hydrophilicity-imparting treatment process is carried out, lamination process is used for.Multiple plasma generating devices 100 can be set.
In general, the partition for being used as a part of the battery of electrochemical appliance is used to for each electrode being electrically isolated from one another, and
It should be configured to allow for for the ionic conductivity between each electrode being maintained at the level higher than particular value.Therefore, this battery
It can be by (being used for the electricity of system (for example, battery) with macroion transmitance, good mechanical strength and to chemical material with partition
Solution matter) and the thin cellular insulant material of good long of solvent formed.In such battery, electrical partition should be
Permanent elasticity, and should be moved in being charged and discharged step with the movement of system (for example, electrode assembly).For
Using the Ni-MH secondary battery of the environmentally friendly battery of water-soluble electrolyte, since partition uses alkali water-soluble electrolyte,
Therefore there should be alkali resistance, to the hypoergia of electrode and with cost-benefit attribute.By polyolefin polymers material
In the case where partition of the material for Ni-MH secondary battery, due to its hydrophobicity, partition does not have parent to water-soluble alkaline electrolyte
And therefore property in order to be applied to Ni-MH secondary battery, should substantially carry out additional hydrophilicity-imparting treatment process.Dielectric
Barrier plasma processing can be used for this hydrophilicity-imparting treatment process.
Fig. 2 is the concept map for showing the DBD plasma generating device for some embodiments conceived according to the present invention.
Referring to Fig. 2, DBD plasma generating device 100 may include: power electrode 110 comprising in a first direction
The corner of extension；Grounding electrode 120, it is spaced apart with power electrode 110, to expose an angle of power electrode 110
Extend in portion and in a first direction (or x-axis direction)；Dielectric barrier 130, between power electrode 110 and grounding electrode 120
Between, and it is arranged to surround the corner of power electrode 110；Multiple nozzles 150 are formed in grounding electrode 120,
It is spaced from each other a distance on one direction and is configured to spray gas towards the corner of power electrode 110；And alternating current
Source 140 is configured to supply AC power to power electrode 110.DBD can be carried out in the corner of power electrode 110.
DBD plasma generating device 100 can be configured on the partition of battery using the processing gas under atmospheric pressure
Body carries out hydrophilicity-imparting treatment process.Processing gas for hydrophilicity-imparting treatment process may include selected from oxygen (O2), nitrogen
(N2), hydrogen (H2At least one of) and argon gas (Ar).
Fiber, metal, glass or plastics will be can be by the target object 30 that DBD is handled.Target object 30 can be with
In with flexible film shape or fixed shape.Target object 30 can be set on pedestal 91.Pedestal 91 can use energy
The roller of moving film or substrate is enough in replace.
Power electrode 110 can have isoceles triangle prism shape and can prolong on (or length direction) in a first direction
It stretches.When being observed in the plane limited by the first and second directions, triangular prism may include vertex and be located at vertex two sides
Side.The apex angle of power electrode 110 can be in the range of 30 °~90 °.Power electrode 110 can be closed by metal or metal
Gold is formed.The corner of power electrode 110 can be used for the target object 30 being spaced apart on third direction (or z-axis direction)
Carry out corona treatment.Power electrode 110 may include the flow path 101 extended in a first direction, and the sky that pressurizes
Gas or refrigerant can flow through flow path.It therefore, can be with cooling power electrode 110.
The corner for exposing power electrode 110 can be set into grounding electrode 120.Grounding electrode 120 can be by metal or gold
Belong to alloy to be formed.Specifically, grounding electrode 120 can be arranged respectively in face of the side positioned at vertex two sides.Surface electricity
Lotus or storage charge can be accumulated in the corner portion of power electrode 110.Surface charge can cause arc discharge, therefore, in order to
Surface charge is captured, the adjacent corner in power electrode 110 can be set in grounding electrode 120.
Grounding electrode 120 may include that the left grounding electrode 120a in the left side of power electrode 110 is arranged in and is arranged in function
The right grounding electrode 120b on the right side of rate electrode 110.Space between grounding electrode 120 and power electrode 110 can be uniformly
's.Left grounding electrode 120a and right grounding electrode 120b can be arranged to symmetrical about power electrode 110.
Grounding electrode 120 can extend in a first direction and can have plate or positive triangle prism shape.Ground connection
The corner for exposing power electrode 110 can be set into electrode 120.Dielectric barrier 130 can be set in left grounding electrode 120a
Between power electrode 110 and between right grounding electrode 120b and power electrode 110.
Dielectric barrier 130 can be the dielectric barriers such as plastics and ceramic material.Dielectric barrier 130 can be set
It is set to the outer surface for completely or partially surrounding power electrode 110.Dielectric barrier 130 can have the thickness of 0.5mm~2mm
Degree.Dielectric barrier 130 can be provided in the form of thin plate.Dielectric barrier 130 may include being arranged to connect with grounding electrode
The outer conducting layer 135 of touching and it is arranged to the inner conducting layer 136 contacted with power electrode.Outer conducting layer 135 can prevent from being grounded
Parasitic discharges occur in gap between electrode and outer conducting layer.Inner conducting layer 136 can be contacted with power electrode, to prevent
Parasitic discharges occur in gap between inner conducting layer and power electrode.Inner conducting layer 136 can be formed as facing outer conduction
Layer 135.Therefore, posting in the region for applying strong electrical field between power electrode and grounding electrode and to it can be inhibited
The formation of raw electric discharge.Outer conducting layer 135 and inner conducting layer 136 can be formed by metal material (for example, copper) or comprising them, and
And it can be applied directly on dielectric barrier 130.Selectively, outer conducting layer 135 and inner conducting layer 136 can by with
The adhesive phase that conductive film form provides is attached on dielectric barrier 130.Selectively, outer conducting layer and inner conducting layer can
To be formed by type metal cream.Inner conducting layer 136 can be coated to surround the corner of power electrode 110.However, for
DBD can coat outer conducting layer 135 to expose the corner of power electrode 110.Outer conducting layer 135 can substantially refer to ground connection
The extension of electrode.However, DBD may not occur in the case where corner of the outer conducting layer to surround dielectric barrier is arranged.
Therefore, the open area of outer conducting layer can change DBD characteristic.
Nozzle 150 may include the multiple left nozzles being formed in left grounding electrode and be formed in more in right grounding electrode
A right nozzle.Left gas buffer space can be formed in left grounding electrode, and can be extended in a first direction.It can be on the right side
Right gas buffer space is formed in grounding electrode, and can be extended in a first direction.It is empty that left nozzle may be coupled to left buffering
Between, right nozzle may be coupled to right cushion space.
Nozzle 150 may include the portion that the surface movement of dielectric barrier is parallel to before spraying gas by nozzle
Point.Therefore, the gas sprayed from nozzle can be mobile towards target object with high flow rate, while inhibiting formation and the cooling of turbulent flow
Dielectric barrier.Air-flow from left nozzle and the air-flow from right nozzle can be in the corner portion phases each other of power electrode 110
It hands over.
AC power source 140 can be configured to be several kHz to power electrode supply frequency to tens kHz and power be several
The electric power of kW to tens kW.Match circuit can be set between AC power source and power electrode, effectively to transmit electric power.
Fig. 3 is the sectional view for showing the DBD plasma generating device for other embodiments conceived according to the present invention.
Fig. 4 is the figure for showing the dielectric barrier of plasma generating device of Fig. 3.
Referring to Fig. 3 and Fig. 4, DBD plasma generating equipment 200 may include: power electrode 110 comprising first
The corner just upwardly extended；Grounding electrode 220, it is spaced apart with power electrode 110, to expose power electrode 110
One corner simultaneously extends in a first direction；Dielectric barrier 230 between power electrode and grounding electrode, and is set
It is set to the corner for surrounding power electrode 110；Multiple nozzle 250a, 250b, are formed in grounding electrode 220, in a first direction
Upper configuration is spaced from each other a distance and is configured to spray gas towards the corner of power electrode 110；And AC power source
140, it is configured to supply AC power to power electrode.DBD can be carried out in the corner of power electrode 110.
Power electrode 110 can have isoceles triangle prism shape and can (or length or x-axis side in a first direction
To) on extend.Triangular prism may include vertex and the side positioned at vertex two sides.The apex angle of power electrode 110 can be at 30 °
In the range of~90 °.Power electrode 110 can be formed by metal or metal alloy.The corner of power electrode 110 can be used for pair
The target object 30 being spaced apart on third direction (or z-axis direction) carries out corona treatment.Power electrode 110 may include
The flow path extended in a first direction, and forced air or refrigerant can flow through flow path.Therefore, it can cool down
Power electrode.
The corner for exposing power electrode can be set into grounding electrode 220.Grounding electrode 220 can be closed by metal or metal
Gold is formed.Specifically, grounding electrode 220 may include the shape similar to positive triangle prism and be arranged respectively in face of position
In the part of two sides of the vertex two sides of power electrode 110.Grounding electrode 220 can extend in the first direction.Table
Surface charge or storage charge can be accumulated in the corner portion of power electrode 110.Surface charge can cause arc discharge, therefore,
In order to capture surface charge, the adjacent corner in power electrode 110 is can be set in grounding electrode 220.
Grounding electrode 220 may include that the left grounding electrode 220a in the left side of power electrode 110 is arranged in and is arranged in function
The right grounding electrode 220b on the right side of rate electrode 110.Space between grounding electrode 220 and power electrode 110 can be uniformly
's.Left grounding electrode 220a and right grounding electrode 220b can be arranged to symmetrical about power electrode 110.Grounding electrode lid 224
It can be configured to for the uper side surface of left grounding electrode 220a to be connected to the uper side surface of right grounding electrode 220b.Grounding electrode
220 can be set into the cavity for limiting and being similar to triangular prism shape.The power electrode 110 surrounded by dielectric barrier 230 can
To be inserted into the cavity of grounding electrode 220.Meanwhile in order to inhibit the parasitic discharges between power electrode and electrode, ground connection electricity
Space between polar cap 224 and power electrode 110 can be greater than the interval between left grounding electrode 220a and power electrode 110,
It and can be 30mm or more.
Grounding electrode 220 can extend in a first direction and can have positive triangle prism shape.Grounding electrode 220
The corner for exposing power electrode can be set into.The bevel edge of left grounding electrode 220a and right grounding electrode 220b can be configured to
In face of power electrode.
Dielectric barrier 230 may include the corner of coverage power electrode 110 and be located under the bottom surface of grounding electrode 220
The part of side.Dielectric barrier 230 can be the dielectric barriers such as plastics and ceramic material.
Dielectric barrier 230 may include main dielectric barrier 232 and assist medium barrier layer 234.Main dielectric barrier
232 can have the thickness of 0.5mm~2mm.
Assist medium barrier layer 234 can be set in the side opposite with the vertex of power electrode.More specifically, auxiliary is situated between
Matter barrier layer 234 can be set between that side in grounding electrode lid 224 and in face of the vertex of power electrode.Assist medium stops
The plate structure that layer 234 can be with trapezoid cross section and extend in a first direction.Assist medium barrier layer 234 can have
There is the thickness of 30mm or more.
Dielectric barrier 230 can be provided in the form of thin plate.Dielectric barrier 230 may include being arranged to and ground connection electricity
The outer conducting layer 235 and be arranged to the inner conducting layer 236 contacted with power electrode that pole contacts.Outer conducting layer 235 can prevent
Parasitic discharges occur in gap between grounding electrode and outer conducting layer.Inner conducting layer 236 can be contacted with power electrode, thus
It prevents that parasitic discharges occur in the gap between inner conducting layer and power electrode.Inner conducting layer can be formed as facing interior conduction
Layer.Therefore, the parasitism in the region for applying strong electrical field between power electrode and grounding electrode and to it can be inhibited
The formation of electric discharge.Outer conducting layer and inner conducting layer can be formed by metal material (for example, copper) or comprising them, and can be with
It is applied directly on dielectric barrier 230.Selectively, outer conducting layer and inner conducting layer can be by being mentioned in the form of conductive film
The adhesive phase of confession is attached on dielectric barrier.Selectively, outer conducting layer and inner conducting layer can pass through type metal cream
It is formed.Inner conducting layer can be coated to surround the corner of power electrode 110.However, for DBD, can coat outer conducting layer with
Expose the corner of power electrode 110.Outer conducting layer can be with the subjacent positioned at grounding electrode of uncoated dielectric barrier 230
Part.
Nozzle 250a, 250b may include the multiple left nozzle 252a being formed in left grounding electrode 220a and be formed in
Multiple right nozzle 252b in right grounding electrode 220b.Left gas buffer space can be formed in left grounding electrode 220a
222a, and can extend in a first direction.Right gas buffer space 222b can be formed in right grounding electrode 220b, and
And it can extend in a first direction.Left nozzle 250a may be coupled to left cushion space 222a, and right nozzle 250b can connect
To right cushion space 222b.
Nozzle 250a, 250b may include being connected to the join domain 252 of cushion space and spraying gas by it
It is parallel to the mobile tilting zone 254 in the surface of dielectric barrier before.It therefore, can be with high flow rate from the gas that nozzle sprays
It is mobile towards target object, while inhibiting formation and the cooling medium barrier layer of turbulent flow.Air-flow from left nozzle and from the right side
The air-flow of nozzle can intersect with each other in the corner portion of power electrode 110.
AC power source 140 can be configured to be several kHz to power electrode supply frequency to tens kHz and power be several
The electric power of kW to tens kW.Match circuit can be set between AC power source and power electrode, effectively to transmit electric power.
Target object 30 can be arranged adjacent to the bottom surface of grounding electrode 220, and can be used at the angle of power electrode 110
The plasma that portion nearby generates carrys out direct processing target object.Furthermore, it is possible to twilight sunset is generated in the two sides of plasma, and
It can be used for processing target object 30, processing speed can be improved in this way.
Fig. 5 is the sectional view for showing the DBD plasma generating device for other embodiments conceived according to the present invention.
Fig. 6 is the plan view for showing the plasma generating device of Fig. 5.
Fig. 7 is the curve graph for showing variation of the flow with nozzle location.
For simplicity, with it is previous referring to shown in Fig. 3~Fig. 7 and those of illustrate the similar element of element and feature and
Feature will not be described in further detail.
Referring to figure 5 and figure 6, DBD plasma generating device 300 may include: power electrode 110 comprising first
The corner just upwardly extended；Grounding electrode 320, it is spaced apart with power electrode 110, to expose power electrode 110
One corner simultaneously extends in a first direction；Dielectric barrier 230 between power electrode and grounding electrode, and is set
It is set to the corner for surrounding power electrode 110；Multiple nozzle 250a, 250b, are formed in grounding electrode 220, in a first direction
Upper configuration is spaced from each other a distance and is configured to spray gas towards the corner of power electrode 110；And AC power source
140, it is configured to supply AC power to power electrode.DBD can be carried out in the corner of power electrode 110.
Grounding electrode 320 may include that the left grounding electrode 320a in the left side of power electrode 110 is arranged in and is arranged in function
The right grounding electrode 320b on the right side of rate electrode 110.Space between grounding electrode 320 and power electrode 110 can be uniformly
's.Left grounding electrode 320a and right grounding electrode 320b can be arranged to symmetrical about power electrode 110.Grounding electrode lid 324
The uper side surface of left grounding electrode 320a can be connected to the uper side surface of right grounding electrode 320b.Grounding electrode 320 can be with
It is arranged to limit the cavity for being similar to triangular prism shape.The power electrode 110 surrounded by dielectric barrier 230 is inserted into
In the cavity of grounding electrode 320.Meanwhile in order to inhibit the parasitic discharges between power electrode and electrode, grounding electrode lid 324 with
Space between power electrode 110 can be greater than the interval between left grounding electrode 320a and power electrode 110, and can be
30 mm or more.
Grounding electrode 320 can extend in a first direction and can have positive triangle prism shape.Grounding electrode 320
The corner for exposing power electrode can be set into.Face can be set into the bevel edge of left grounding electrode 320a and right grounding electrode 320b
To power electrode.Positioned at each corner of the left grounding electrode 320a and right grounding electrode 320b of the adjacent corner of power electrode 110
It may include corner portion 329, carry out chamfer machining on it.In other words, the part for being provided with nozzle of grounding electrode can be with
It is chamfered along a first direction.Therefore, outer conducting layer 235 can be right with corner portion 329 on the exposed portion of dielectric barrier
It is quasi-.As chamfer machining as a result, nozzle can be shaped generally as perpendicular to chamfering surface.It is thus possible to improve nozzle diameter
Repeatability and mechanical stability.
Nozzle may include the left nozzle 250a being arranged in left grounding electrode and the right spray that is arranged in right grounding electrode
Mouth 250b.Left nozzle and right nozzle can be set into be offset from one another in a first direction.
The both ends of grounding electrode 320 can be arranged in a first direction in support portion 160, and can be used for fixed left and right
Grounding electrode.
It can have opposite to each other referring to Fig. 6, left cushion space 222a and allow to supply the two of gas in a first direction
A gas access, right cushion space 222b can have the center positioned at right cushion space and allow perpendicular to first direction
Second or y-axis direction on supply gas gas access.It is sprayed as caused by the position difference of the pressure of left cushion space from nozzle
The variation for the gas flow penetrated can be compensated by the position difference of the pressure of right cushion space.It can permit and sprayed from nozzle in this way
The gas penetrated has uniform flow in a first direction.
In the curve graph of Fig. 7, the unit distance between nozzle is normalized to 1.Referring to Fig. 7, from the gas of left nozzle injection
The flow of body highest at position 0.5, and the flow of the gas sprayed from right nozzle highest at position 0 and 1.Therefore, it comes from
The gas injection of left and right nozzle is overlapped to allow 0.9 or more uniform flux to be distributed.
Although having specifically illustrated and having illustrated the exemplary implementation scheme of present inventive concept, ordinary skill
Personnel will be understood that, in the case where not departing from the spirit and scope of the appended claims, can carry out in form and details
Variation.
Claims (11)
1. a kind of dielectric barrier discharge plasma generation device, comprising:
Power electrode comprising the corner extended in a first direction；
Grounding electrode, it is spaced apart with the power electrode, to expose the corner of the power electrode and in first party
It upwardly extends；
Dielectric barrier between the power electrode and the grounding electrode, and is arranged to surround the power electricity
The corner of pole；
Multiple nozzles are formed in the grounding electrode, are spaced from each other a distance and are configured in a first direction
Gas is sprayed towards the corner of the power electrode；With
AC power source is configured to supply AC power to the power electrode,
Wherein, dielectric barrier discharge is carried out on the corner of the power electrode,
Also, the dielectric barrier further includes the outer conducting layer for being arranged to contact with the grounding electrode.
2. the apparatus according to claim 1, wherein the power electrode has isoceles triangle prism shape, and described
The apex angle of power electrode is 30 °~90 °.
3. the apparatus according to claim 1, wherein the nozzle includes being configured to before spraying gas by it
It is parallel to the mobile part in the surface of the dielectric barrier.
4. the apparatus according to claim 1, wherein the diameter of the nozzle is 0.5mm~1mm.
5. the apparatus according to claim 1, wherein the part for being provided with the nozzle of the grounding electrode is along first
Direction is chamfered.
6. the apparatus according to claim 1, wherein the dielectric barrier further includes being arranged to connect with the power electrode
The inner conducting layer of touching.
7. the apparatus according to claim 1, wherein the grounding electrode includes the left side that the power electrode is arranged in
The right grounding electrode of left grounding electrode and the right side that the power electrode is set, and
The nozzle includes the multiple left nozzles being formed in the left grounding electrode and is formed in the right grounding electrode
Multiple right nozzles.
8. device according to claim 7, wherein the left nozzle and the right nozzle are configured in a first direction
It is offset from one another.
9. device according to claim 7, wherein the left grounding electrode includes formed therein and along first party
The left gas buffer space upwardly extended,
The right grounding electrode includes right gas buffer space that is formed therein and extending in a first direction,
The left cushion space has opposite to each other and allows to supply in a first direction two gas accesses of gas, and
The right cushion space has the center positioned at the right cushion space and allows in the second party perpendicular to first direction
The gas access of supply gas upwards.
10. the apparatus according to claim 1, wherein the dielectric barrier with a thickness of 0.5mm~2mm.
11. the apparatus according to claim 1, wherein the power electrode has isoceles triangle prism shape, described device
Further include:
The side in face of the vertex of the power electrode is arranged in assist medium barrier layer；With
Grounding electrode lid is arranged on the assist medium barrier layer to connect the separate section of the grounding electrode each other
It connects, and
The assist medium barrier layer with a thickness of 30mm or more.
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| KR10-2015-0070145 | 2015-05-20 | ||
| KR1020150070145A KR101682903B1 (en) | 2015-05-20 | 2015-05-20 | Linear type Dielectric barrier discharge plasma source for surface treatment |
| PCT/KR2016/005218 WO2016186431A1 (en) | 2015-05-20 | 2016-05-18 | Linear dielectric barrier discharge plasma generating device for surface treatment |
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| CN107624268A CN107624268A (en) | 2018-01-23 |
| CN107624268B true CN107624268B (en) | 2019-11-05 |
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| JP (1) | JP6788615B2 (en) |
| KR (1) | KR101682903B1 (en) |
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| US11691119B2 (en) * | 2018-02-09 | 2023-07-04 | China Petroleum & Chemical Corporation | Low temperature plasma reaction device and hydrogen sulfide decomposition method |
| CN110124482A (en) * | 2018-02-09 | 2019-08-16 | 中国石油化工股份有限公司 | The method of reaction of low temperature plasma device and decomposing hydrogen sulfide |
| KR102024568B1 (en) * | 2018-02-13 | 2019-09-24 | 한국기초과학지원연구원 | Point etching module using annular surface dielectric barrier discharge apparatus and method for control etching profile of point etching module |
| JP6851706B2 (en) * | 2018-05-30 | 2021-03-31 | 東芝三菱電機産業システム株式会社 | Inert gas generator |
| DE102019101063B4 (en) * | 2019-01-16 | 2021-02-25 | Cinogy Gmbh | Plasma treatment arrangement and method for adapting the size of a support surface of the plasma treatment arrangement to the size of the surface to be treated |
| CN110035594B (en) * | 2019-03-18 | 2021-04-13 | 西安交通大学 | Material modification device, system and method based on dielectric barrier discharge plasma |
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| JP6788615B2 (en) | 2020-11-25 |
| WO2016186431A1 (en) | 2016-11-24 |
| JP2018521454A (en) | 2018-08-02 |
| CN107624268A (en) | 2018-01-23 |
| KR20160136551A (en) | 2016-11-30 |
| KR101682903B1 (en) | 2016-12-20 |
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