WO2016186431A1 - 표면 처리용 선형 유전체 장벽 방전 플라즈마 발생장치 - Google Patents

표면 처리용 선형 유전체 장벽 방전 플라즈마 발생장치 Download PDF

Info

Publication number
WO2016186431A1
WO2016186431A1 PCT/KR2016/005218 KR2016005218W WO2016186431A1 WO 2016186431 A1 WO2016186431 A1 WO 2016186431A1 KR 2016005218 W KR2016005218 W KR 2016005218W WO 2016186431 A1 WO2016186431 A1 WO 2016186431A1
Authority
WO
WIPO (PCT)
Prior art keywords
electrode
dielectric barrier
power
ground electrode
barrier layer
Prior art date
Application number
PCT/KR2016/005218
Other languages
English (en)
French (fr)
Korean (ko)
Inventor
임유봉
이원오
박상후
Original Assignee
주식회사 플라즈맵
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 플라즈맵 filed Critical 주식회사 플라즈맵
Priority to JP2017559699A priority Critical patent/JP6788615B2/ja
Priority to CN201680028625.6A priority patent/CN107624268B/zh
Publication of WO2016186431A1 publication Critical patent/WO2016186431A1/ko

Links

Images

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Definitions

  • the present invention relates to a linear plasma generator using a dielectric barrier discharge (DBD) at atmospheric pressure, more specifically, a wafer composed of a power source electrode, a ground electrode, and a dielectric barrier layer therebetween to generate an atmospheric plasma.
  • DBD dielectric barrier discharge
  • the present invention relates to a linear plasma generator capable of surface treatment of a film or the like.
  • Korean Patent No. 10-0760551 discloses a uniform and stable large-area plasma generator autonomously at atmospheric pressure for surface treatment.
  • a second electrode disposed to form a discharge space by a predetermined distance from the first electrode applied through the matching circuit in a longitudinal direction, and a dielectric barrier layer covering both the first electrode for stable plasma discharge. It is characterized by including.
  • Patent No. 10-0760551 an arc occurs between treatment objects due to the formation of a local electric field due to charges accumulated on the dielectric surface surrounding the first electrode, and as a result, a defect occurs.
  • the generation of arc may form small holes in the thin film, which is a direct cause of the defect.
  • An indirect dielectric barrier discharge type plasma generation apparatus is proposed as a plasma surface treatment technique for controlling defects caused by plasma arc generation.
  • the electrode part is covered with a dielectric layer to which high voltage is applied, and the electrode part and the entire dielectric layer are wrapped in a housing so that high potentials are not exposed to the outside and arcs do not come out of the device.
  • Surface treatment technology is proposed as a plasma surface treatment technique for controlling defects caused by plasma arc generation.
  • Korean Patent No. 10-1503906 discloses a plasma reactor that uses an indirect plasma to remove damage that may be inflicted on a treated object for surface treatment.
  • a housing to which a ground electrode is connected and an electrode portion to which high frequency power is applied disposed inside the housing, a dielectric barrier layer surrounding all of the electrode portions, an electrode portion to which power is applied, and a lower portion arranged to maintain a constant distance from the dielectric barrier layer And a ground electrode portion.
  • a plurality of holes are formed between the lower ground electrode portion and the electrode portion to which electric power is applied, and a plurality of holes for injecting gas are formed, and an object such as a film is indirectly through the afterglow in the injected gas.
  • the surface treatment of can be performed.
  • Patent No. 10-1503906 although arc generation can be greatly reduced through indirect plasma, it has a problem that the surface treatment process efficiency is greatly reduced and it is difficult to secure a high production rate.
  • the prior art proposes a technique of a direct treatment to increase productivity using a dielectric barrier discharge and an indirect treatment to ensure stability.
  • a direct treatment to increase productivity using a dielectric barrier discharge and an indirect treatment to ensure stability.
  • the present inventors have repeatedly studied to develop a plasma generating apparatus technology capable of capturing surface accumulated charge on a dielectric surface in a plasma processing process using a direct dielectric barrier discharge, and thus has stable plasma discharge and high productivity.
  • a dielectric barrier plasma generator the present invention has been completed.
  • An object of the present invention is to provide a direct plasma generator capable of stable plasma surface treatment by capturing surface capacitive charges in a plasma generator using direct dielectric barrier discharge.
  • Another object of the present invention is to provide a direct plasma generator which is more efficient than the production efficiency of the conventional direct plasma generator by using afterglow in combination with direct plasma discharge.
  • Dielectric barrier discharge plasma generating apparatus includes a power electrode including a corner extending in the first direction; A ground electrode exposing one edge of the power electrode and extending in the first direction at a predetermined distance from the power electrode; A dielectric barrier layer interposed between the power supply electrode and the ground electrode and disposed to surround an edge of the power supply electrode; A plurality of nozzles spraying gas in a corner direction of the power electrode and arranged at a predetermined interval in the first direction and formed in the ground electrode; And an AC power supply for applying AC power to the power supply electrode. A dielectric barrier discharge is performed on the edge of the power electrode.
  • the power electrode is an isosceles triangular pillar shape
  • the vertex angle of the power electrode may be 30 to 90 degrees.
  • the nozzle may include a portion that runs parallel to the surface of the dielectric barrier layer before the gas is injected.
  • the diameter of the nozzle may be 0.5 millimeter to 1 millimeter.
  • the distance between the vertex of the dielectric barrier layer and the nozzle may be from 1 millimeter to 30 millimeters.
  • a portion in which the nozzle of the ground electrode is disposed may be chamfered along the first direction.
  • the dielectric barrier layer may further include an outer conductive layer at a portion in contact with the ground electrode.
  • the dielectric barrier layer may further include an inner conductive layer at a portion in contact with the power electrode.
  • the ground electrode may include a left ground electrode disposed on the left side of the power electrode and a right ground electrode disposed on the right side of the power electrode.
  • the nozzle may include a plurality of left nozzles formed on the left ground electrode and a plurality of right nozzles formed on the right ground electrode.
  • the left nozzle may be disposed to be offset in the first direction from the right nozzle.
  • the left ground electrode includes a left gas buffer space formed therein and extending in the first direction, wherein the right ground electrode is formed therein and extends in the first direction
  • the right gas buffer space may be included.
  • the left buffer space may receive gas from both ends of the first direction, and the right buffer space may receive gas in a second direction perpendicular to the first direction in the middle of the right buffer space.
  • the thickness of the dielectric barrier layer may be 0.5 millimeter to 2 millimeters.
  • the power electrode may be an isosceles triangular pillar shape.
  • An auxiliary dielectric barrier layer disposed on a side opposite to the vertex angle of the power electrode; And a ground electrode cover disposed on the auxiliary dielectric barrier layer and connecting the ground electrodes to each other.
  • the thickness of the auxiliary dielectric barrier layer may be at least 30 millimeters.
  • the present invention provides a linear plasma generator using direct dielectric barrier discharge.
  • the linear plasma apparatus can continuously process a large area substrate or film in the form of a line.
  • a ground electrode for capturing the capacitive charge on the surface of the dielectric barrier layer is in contact with the surface of the dielectric barrier layer so that the surface capacitive charge does not generate an arc and enables a stable surface treatment process.
  • the dielectric surface is coated with a conductive film so that the surface storage charge can move along the conductive film, so that arc discharge can be suppressed.
  • a metal thin film may be deposited or printed on the dielectric surface to form an equipotential boundary between gap spaces that may occur during processing, thereby completely blocking parasitic discharge.
  • Plasma is a power electrode having a triangular shape, a dielectric barrier layer surrounding the ground electrode, a ground electrode which is surrounded on the outer surface of the dielectric barrier layer except for a discharge region (a narrow tee region including a line connected to a triangle-shaped vertex), And a plurality of nozzles formed in the ground electrode.
  • Process gas may be supplied through the nozzle, and dielectric barrier discharge may be performed in the discharge region.
  • the chamfering process can increase the open area of the ground electrode, and at this time, the effect of plasma discharge and the afterglow by fluid flow can be expected at the dielectric surface of the open area. have.
  • the nozzles formed on opposite surfaces of the ground electrode may be formed of a plurality of holes crossing each other.
  • the plasma apparatus may perform direct plasma surface treatment through dielectric barrier discharge.
  • the ground electrode By having a ground electrode disposed in contact with the surface of the dielectric barrier layer, the ground electrode can block arcing through the capture of charge that accumulates on the surface of the dielectric barrier layer. Accordingly, a stable direct plasma surface treatment process can be performed. In addition, mass production reliability of the plasma apparatus can be ensured.
  • the gas supplied using the discharge occurring on the surface of the dielectric barrier layer may be secondary discharged to increase the process efficiency. Accordingly, it is possible to provide a dielectric barrier plasma generator for surface treatment having higher efficiency than the prior art.
  • FIG. 1 shows a dielectric barrier discharge plasma generating apparatus system according to an embodiment of the present invention.
  • FIG. 2 is a conceptual diagram illustrating a dielectric barrier discharge plasma generating apparatus according to an embodiment of the present invention.
  • FIG 3 is a cross-sectional view illustrating a dielectric barrier discharge plasma apparatus according to another embodiment of the present invention.
  • FIG. 4 is a view for explaining the dielectric barrier layer of the plasma apparatus of FIG.
  • FIG. 5 is a cross-sectional view illustrating a dielectric barrier discharge plasma generating apparatus according to still another embodiment of the present invention.
  • FIG. 6 is a plan view of the plasma generator of FIG. 5.
  • FIG. 7 is a view showing a flow rate distribution according to the position of the nozzle.
  • dielectric barrier discharges can damage the separator film by the plasma source and cause product defects. Accumulated charge that accumulates on the surface of the plasma source dielectric barrier layer creates a locally high electric field, resulting in a high current density arc. Capacitive charge is surface accumulated charge in a dielectric barrier discharge (DBD) where current flow is blocked by the dielectric layer and accumulated on the dielectric surface.
  • DBD dielectric barrier discharge
  • arc discharge can operate as a cause of film damage. This arc discharge is the main cause for the continuous failure rate, and the solution is to suppress the formation of memory charge.
  • the dielectric barrier layer forms a locally high electric field by micro damage to the ceramic surface and can generate arcs of high current density along the electric field. If there is surface damage to the dielectric barrier material, the failure rate increases.
  • Dielectric barrier discharge plasma generating apparatus 1) to ensure stability through the surface charge trapping, has a high productivity by the direct DBD method, and improves the productivity and uniformity through Afterglow.
  • the plasma generating apparatus As the distance between the high voltage applying electrode and the susceptor is increased, the plasma is discharged on the surface of the dielectric barrier layer, and afterglow is caused by rapid fluid flow.
  • the hydrophilic treatment of the exposed surface of the workpiece disposed on the susceptor can be performed.
  • FIG. 1 shows a dielectric barrier discharge plasma generating apparatus system according to an embodiment of the present invention.
  • the dielectric barrier discharge plasma generating system includes a separator film wound in a roll shape, a roller 90 for transferring the separator film, and a plasma device 100 for hydrophilic treatment of the and transferred separator films. It may include.
  • the hydrophilic separator film may be provided in a lamination process. There may be a plurality of plasma apparatuses 100.
  • a separator used in a battery among electrochemical devices should be electrically isolated from each other between electrodes, and maintain at least a certain ion conductivity between the electrodes. Therefore, the separator used in such a battery is made of a thin porous insulating material having high ion permeability, good mechanical strength, and good long-term stability with respect to chemicals and solvents used in the electrolyte of a system, for example, a battery. In such batteries, the electromechanical separator must be permanently elastic and must follow movement in the system, eg, electrode pack, during the charging and discharging process.
  • the Ni-MH secondary battery membrane separator which is an environmentally friendly battery using a soluble electrolyte, should have alkali resistance by using an alkaline water soluble electrolyte, and should be economical without being reactive between electrodes.
  • a hydrophilic property does not have an affinity for a water-soluble alkaline electrolyte, so a separate hydrophilization treatment process is essential for application to the Ni-MH secondary battery. It must be accompanied.
  • a dielectric barrier plasma treatment may be used as the hydrophilization treatment.
  • FIG. 2 is a conceptual diagram illustrating a dielectric barrier discharge plasma generating apparatus according to an embodiment of the present invention.
  • the dielectric barrier discharge plasma generating apparatus 100 may include a power electrode 110 including an edge extending in a first direction; A ground electrode 120 that exposes one edge of the power electrode 110 and extends in the first direction (x-axis direction) at regular intervals from the power electrode 110; A dielectric barrier layer 130 interposed between the power electrode 110 and the ground electrode 120 and disposed to surround an edge of the power electrode; A plurality of nozzles 150 formed on the ground electrode 120 by injecting gas in a corner direction of the power electrode 110 and having a predetermined interval in the first direction; And an AC power source 140 for applying AC power to the power electrode 110. A dielectric barrier discharge is performed on the edge of the power electrode 110.
  • the dielectric barrier discharge plasma generator 100 may hydrophilize a separator of a battery using a process gas at atmospheric pressure.
  • the process gas used for the hydrophilic treatment may include one or more selected from oxygen (O 2 ), nitrogen (N 2 ), hydrogen (H 2 ), and argon (Ar).
  • the workpiece 30 treated by the dielectric barrier discharge may be fiber, metal, glass, or plastic.
  • the workpiece 30 may have a film form or a fixed shape with flexibility.
  • the workpiece 30 may be disposed on the susceptor 91.
  • the susceptor 91 may be transformed into a roller for moving the film or the substrate.
  • the power electrode 110 may have an isosceles triangular pillar shape, and the power electrode 110 may extend in a first direction (length direction).
  • the triangular pillar may include a vertex angle and sides disposed at both sides of the vertex angle in a plane defined in a first direction and a second direction.
  • the vertex angle of the power electrode 110 may be 30 degrees to 90 degrees.
  • the power electrode 110 may be a metal or a metal alloy.
  • the edges of the power electrode 110 may be spaced apart in the third direction (z-axis direction) to plasma-process the processed object 30.
  • the power electrode 110 may include a flow path 101 traveling in a first direction, and pressurized air or refrigerant may flow in the flow path. Accordingly, the power electrode 110 may be cooled.
  • the ground electrode 120 may be disposed to expose a corner of the power electrode 110.
  • the ground electrode 110 may be a metal or a metal alloy.
  • the ground electrodes 110 may be disposed to face sides disposed at both sides of the vertex angle. Surface charges or memory charges may accumulate at corners of the power supply electrode 110. Since the surface charge may cause an arc discharge, the ground electrode 110 may be disposed adjacent to the edge of the power electrode 110 in order to capture the surface charge.
  • the ground electrode 120 may include a left ground electrode 120a disposed on the left side of the power electrode 110 and a right ground electrode 120b disposed on the right side of the power electrode. An interval between the ground electrode 110 and the power electrode 110 may be constant. The left ground electrode 120a and the right ground electrode 120b may be symmetrically disposed with respect to the power electrode 110.
  • the ground electrode 110 may have a plate or right triangle shape extending in a first direction.
  • the ground electrode 110 may be disposed to expose a corner of the power electrode 110.
  • a dielectric barrier layer may be disposed between the left ground electrode 120a and the power electrode and between the right ground electrode 120b and the power electrode.
  • the dielectric barrier layer 130 may be a dielectric barrier layer such as plastic or ceramic.
  • the dielectric barrier layer 130 may be disposed to surround all or part of an outer surface of the power electrode 110.
  • the thickness of the dielectric barrier layer 130 may be 0.5 mm to 2 mm.
  • the dielectric barrier layer 130 may be formed of a thin plate.
  • the dielectric barrier layer 130 may include an outer conductive layer 135 at a portion in contact with the ground electrode and an inner conductive layer 136 at a portion in contact with the power electrode.
  • the outer conductive layer 135 eliminates the occurrence of parasitic discharge in the gap between the ground electrode and the outer conductive layer.
  • the inner conductive layer 136 is in contact with the power supply electrode to eliminate the occurrence of parasitic discharge in the gap between the inner conductive layer and the power supply electrode.
  • the inner conductive layer 136 may be formed to face the outer conductive layer 135. Accordingly, generation of parasitic discharge can be suppressed in a region where a strong electric field is applied between the power supply electrode and the ground electrode.
  • the outer conductive layer 135 and the inner conductive layer 136 may be directly coated on the dielectric barrier layer 130 with a metal material such as copper.
  • the outer conductive layer 135 and the inner conductive layer 136 may be adhered to the dielectric barrier layer 130 through an adhesive with a conductive thin film.
  • the outer conductive layer and the inner conductive layer may be formed by printing a metal face.
  • the inner conductive layer 136 may be coated to surround the edge of the power electrode. However, the outer conductive layer 135 may be coated to be removed from the edge of the power electrode for dielectric barrier discharge.
  • the outer conductive layer 135 substantially means an extension of the ground electrode. However, when the outer conductive layer is disposed to surround the edge of the dielectric barrier layer, no dielectric barrier discharge occurs. Thus, the open portion of the outer conductive layer can change the characteristics of the dielectric barrier discharge.
  • the nozzle 150 includes a plurality of left nozzles formed in the left ground electrode and a plurality of right nozzles formed in the right ground electrode.
  • the left gas buffer space may be formed in the left ground electrode and may extend in the first direction.
  • the right gas buffer space may be formed inside the right ground electrode and may extend in the first direction.
  • the left nozzle may be connected to the left buffer space, and the right nozzle may be connected to the right buffer space.
  • the nozzle 150 may include a portion where the nozzle proceeds in parallel with the surface of the dielectric barrier layer before injecting gas. Accordingly, the nozzle may proceed in the direction of the workpiece at a high flow rate while minimizing the generation of turbulence and cooling the dielectric barrier layer.
  • the gas flow injected from the left nozzle and the gas flow injected into the right nozzle may cross each other on an edge of the power electrode.
  • the AC power source 140 may have a frequency of several kHz to several tens of kHz, and may supply several kW to several tens of kW to the power electrode. It may include a matching circuit for efficiently transferring power between the AC power source and the power supply electrode.
  • FIG 3 is a cross-sectional view illustrating a dielectric barrier discharge plasma apparatus according to another embodiment of the present invention.
  • FIG. 4 is a view for explaining the dielectric barrier layer of the plasma apparatus of FIG.
  • the dielectric barrier discharge plasma generating apparatus 200 includes a power electrode 110 including an edge extending in a first direction; A ground electrode 220 exposing one edge of the power electrode 110 and extending in the first direction at a predetermined distance from the power electrode; A dielectric barrier layer 230 interposed between the power supply electrode and the ground electrode and disposed to surround an edge of the power supply electrode; A plurality of nozzles 250a and 250b spraying gas in a corner direction of the power electrode and arranged at regular intervals in the first direction and formed in the ground electrode; And an AC power source 140 for applying AC power to the power electrode. A dielectric barrier discharge is performed on the edge of the power electrode.
  • the power electrode 110 may have an isosceles triangular pillar shape, and the power electrode 110 may extend in a first direction (length direction, x-axis direction).
  • the triangular pillar may include a vertex angle and sides disposed on both sides of the vertex angle.
  • the vertex angle of the power electrode 110 may be 30 degrees to 90 degrees.
  • the power electrode 110 may be a metal or a metal alloy.
  • the edge of the power electrode 110 may plasma-process the workpiece 30 spaced apart in the third direction (z-axis direction).
  • the power electrode 110 may include a flow path traveling in a first direction, and pressurized air or refrigerant may flow in the flow path. Accordingly, the power electrode can be cooled.
  • the ground electrode 220 may be disposed to expose the edge of the power electrode.
  • the ground electrode 220 may be a metal or a metal alloy.
  • the ground electrode 220 may have a right triangular pillar shape disposed to face sides disposed on both sides of the vertex angle of the power electrode 110.
  • the ground electrode 220 may extend in a first direction. Surface charges or memory charges may accumulate at corners of the power supply electrode 110. Since the surface charge may cause an arc discharge, the ground electrode 220 may be disposed adjacent to the corner to capture the surface charge.
  • the ground electrode 220 may include a left ground electrode 220a disposed on the left side of the power electrode 110 and a right ground electrode 220b disposed on the right side of the power electrode. An interval between the ground electrode 220 and the power electrode 110 may be constant. The left ground electrode 220a and the right ground electrode 220b may be symmetrically disposed with respect to the power electrode 110.
  • the ground electrode cover 224 may connect the upper side of the left ground electrode 220a and the upper side of the right ground electrode 220b to each other.
  • the ground electrode 220 may be formed to include a triangular pillar-shaped cavity as a whole.
  • the power electrode 110 surrounded by the dielectric barrier layer 230 is inserted into the cavity of the ground electrode 220. Meanwhile, in order to suppress parasitic discharge between the power electrode and the electrode, the distance between the ground electrode cover part 224 and the power electrode 110 is 30 millimeters or more and the left ground electrode 220a and the power electrode May be greater than the interval between 110.
  • the ground electrode 220 may have a right triangular pillar shape extending in a first direction.
  • the ground electrode 220 may be disposed to expose the edge of the power electrode.
  • a hypotenuse of the left ground electrode 220a and the right ground electrode 220b may be disposed to face the power electrode.
  • the portion of the dielectric barrier layer 230 covering the edge of the power electrode 110 may be disposed to protrude outward from the bottom surface of the ground electrode 220.
  • the dielectric barrier layer 230 may be a dielectric barrier layer such as plastic or ceramic.
  • the dielectric barrier layer 230 may include a primary dielectric barrier layer 232 and a secondary dielectric barrier layer 234.
  • the main dielectric barrier layer 230 may have a thickness of 0.5 millimeters to 2 millimeters.
  • the auxiliary dielectric barrier layer 234 may be disposed on a side opposite to the vertex of the power electrode. More specifically, the auxiliary dielectric barrier layer 234 may be disposed between the side opposite to the vertex angle of the power electrode and the ground electrode cover 224. A cross section of the auxiliary dielectric barrier layer 234 may be trapezoidal and may have a plate shape extending in a first direction. The auxiliary dielectric barrier layer 234 may have a thickness of 30 millimeters or more.
  • the dielectric barrier layer 230 may be formed of a thin plate.
  • the dielectric barrier layer 230 may include an outer conductive layer 235 at a portion in contact with the ground electrode and an inner conductive layer 236 at a portion in contact with the power electrode.
  • the outer conductive layer 235 eliminates the occurrence of parasitic discharge in the gap between the ground electrode and the outer conductive layer.
  • the inner conductive layer 236 contacts the power supply electrode to eliminate occurrence of parasitic discharge in the gap between the inner conductive layer and the power supply electrode.
  • the inner conductive layer may be formed to face the inner conductive layer. Accordingly, generation of parasitic discharge can be suppressed in a region where a strong electric field is applied between the power supply electrode and the ground electrode.
  • the outer conductive layer and the inner conductive layer may be directly coated on the dielectric barrier layer 230 with a metal material such as copper.
  • the outer conductive layer and the inner conductive layer may be adhered to the dielectric barrier layer through an adhesive using a conductive thin film.
  • the outer conductive layer and the inner conductive layer may be formed by printing a metal face.
  • the inner conductive layer may be coated to surround the edge of the power electrode.
  • the outer conductive layer can be coated to be removed from the edge of the power electrode for dielectric barrier discharge.
  • the outer conductive layer is not coated on the dielectric portion protruding from the bottom surface of the ground electrode.
  • the nozzles 250a and 252b include a plurality of left nozzles 252a formed in the left ground electrode 220a and a plurality of right nozzles 252b formed in the right ground electrode.
  • the left gas buffer space 222a may be formed in the left ground electrode 220a and may extend in the first direction.
  • the right gas buffer space 222b may be formed in the right ground electrode 220a and may extend in the first direction.
  • the left nozzle 250a may be connected to the left buffer space 222a, and the right nozzle 250b may be connected to the right buffer space 222b.
  • the nozzles 250a and 252b are connected to the buffer space 252 and It may include an inclined portion 254 that runs parallel to the surface of the dielectric barrier layer prior to spraying the gas. Accordingly, the nozzle may proceed in the direction of the workpiece at a high flow rate while minimizing the generation of turbulence and cooling the dielectric barrier layer.
  • the gas flow injected from the left nozzle and the gas flow injected into the right nozzle may cross each other on an edge of the power electrode.
  • the AC power source 140 may have a frequency of several kHz to several tens of kHz, and may supply several kW to several tens of kW to the power electrode. It may include a matching circuit for efficiently transferring power between the AC power source and the power supply electrode.
  • the object 30 is disposed adjacent to the bottom surface of the ground electrode 220, and the plasma formed at the edge of the power electrode 110 may directly process the object.
  • the secondary discharges formed on both sides of the plasma may also process the object 30 to improve the process speed.
  • FIG. 5 is a cross-sectional view illustrating a dielectric barrier discharge plasma generating apparatus according to still another embodiment of the present invention.
  • FIG. 6 is a plan view of the plasma generator of FIG. 5.
  • FIG. 7 is a view showing a flow rate distribution according to the position of the nozzle.
  • the dielectric barrier discharge plasma generating apparatus 300 includes a power electrode 110 including an edge extending in a first direction; A ground electrode 320 exposing one edge of the power electrode 110 and extending in the first direction at a predetermined distance from the power electrode; A dielectric barrier layer 230 interposed between the power supply electrode and the ground electrode and disposed to surround an edge of the power supply electrode; A plurality of nozzles 250a and 250b spraying gas in a corner direction of the power electrode and arranged at regular intervals in the first direction and formed in the ground electrode; And an AC power source 140 for applying AC power to the power electrode. A dielectric barrier discharge is performed on the edge of the power electrode.
  • the ground electrode 320 may include a left ground electrode 320a disposed on the left side of the power electrode 110 and a right ground electrode 320b disposed on the right side of the power electrode. An interval between the ground electrode 320 and the power electrode 110 may be constant. The left ground electrode 320a and the right ground electrode 320b may be symmetrically disposed with respect to the power electrode 110.
  • the ground electrode cover 324 may connect an upper side of the left ground electrode 320a and an upper side of the right ground electrode 320b to each other.
  • the ground electrode 320 may be formed to include a triangular column-shaped cavity as a whole.
  • the power electrode 110 surrounded by the dielectric barrier layer 230 is inserted into the cavity of the ground electrode 320. Meanwhile, in order to suppress parasitic discharge between the power electrode and the electrode, the distance between the ground electrode cover part 324 and the power electrode 110 is 30 millimeters or more and the left ground electrode 320a and the power electrode May be greater than the interval between 110.
  • the ground electrode 320 may have a right triangular pillar shape extending in a first direction.
  • the ground electrode 320 may be disposed to expose the edge of the power electrode.
  • a hypotenuse of the left ground electrode 320a and the right ground electrode 320b may be disposed to face the power electrode.
  • An edge of the left ground electrode 320a and the right ground electrode 320b facing the edge of the power electrode may include a chamfered portion 329 that has been chamfered. That is, a portion where the nozzle of the ground electrode is disposed may be chamfered in the first direction.
  • the outer conductive layer 235 can be aligned with the chamfer 329 on the exposed dielectric barrier layer.
  • the nozzle is formed almost perpendicular to the chamfered surface. Thereby, the repeatability of a nozzle diameter can improve and mechanical stability can be improved.
  • the nozzles 250a and 250b may include a left nozzle 250a disposed on the left ground electrode and a right nozzle 250b disposed on the right ground electrode.
  • the left nozzle may be disposed to be offset from the right nozzle in a first direction.
  • the support unit 160 may be disposed at both ends of the ground electrode 320 in the first direction to fix the left and right ground electrodes to each other.
  • the left buffer space 222a is supplied with gas at both ends of the first direction (x-axis direction), and the right buffer space 222b is in the first direction in the middle of the right buffer space.
  • the gas may be supplied in a second direction (y-axis direction) perpendicular to the second direction. Therefore, the flow rate of the nozzle due to the pressure difference according to the position of the left buffer space may be compensated by the pressure difference according to the position of the right buffer space.
  • the nozzle can provide a constant flow rate in the first direction.
  • the unit distance between nozzles was normalized to one.
  • the injection of gas by the left nozzle has a maximum at 0.5 and the injection of gas by the right nozzle has a maximum at zeros and ones. Therefore, the overlap by the injection of the left nozzle and the injection of the right nozzle provides a uniform flow distribution of 0.9 or more.

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
PCT/KR2016/005218 2015-05-20 2016-05-18 표면 처리용 선형 유전체 장벽 방전 플라즈마 발생장치 WO2016186431A1 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2017559699A JP6788615B2 (ja) 2015-05-20 2016-05-18 表面処理用線形誘電体バリア放電プラズマ発生装置
CN201680028625.6A CN107624268B (zh) 2015-05-20 2016-05-18 用于表面处理的线性介质阻挡放电等离子体发生装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020150070145A KR101682903B1 (ko) 2015-05-20 2015-05-20 표면 처리용 선형 유전체 장벽 방전 플라즈마 발생장치
KR10-2015-0070145 2015-05-20

Publications (1)

Publication Number Publication Date
WO2016186431A1 true WO2016186431A1 (ko) 2016-11-24

Family

ID=57320659

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2016/005218 WO2016186431A1 (ko) 2015-05-20 2016-05-18 표면 처리용 선형 유전체 장벽 방전 플라즈마 발생장치

Country Status (4)

Country Link
JP (1) JP6788615B2 (enrdf_load_stackoverflow)
KR (1) KR101682903B1 (enrdf_load_stackoverflow)
CN (1) CN107624268B (enrdf_load_stackoverflow)
WO (1) WO2016186431A1 (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110124482A (zh) * 2018-02-09 2019-08-16 中国石油化工股份有限公司 低温等离子体反应器和分解硫化氢的方法
US20200398245A1 (en) * 2018-02-09 2020-12-24 China Petroleum & Chemical Corporation Low temperature plasma reaction device and hydrogen sulfide decomposition method
CN112166650A (zh) * 2018-05-30 2021-01-01 东芝三菱电机产业系统株式会社 活性气体生成装置

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102024568B1 (ko) 2018-02-13 2019-09-24 한국기초과학지원연구원 환형 면방전 플라즈마 장치를 이용한 점상 식각 모듈 및 점상 식각 모듈의 식각 프로파일을 제어하는 방법
DE102019101063B4 (de) * 2019-01-16 2021-02-25 Cinogy Gmbh Plasma-Behandlungsanordnung und Verfahren zur Anpassung der Größe einer Auflagefläche der Plasma-Behandlungsanordnung an die Größe der zu behandelnden Oberfläche
CN110035594B (zh) * 2019-03-18 2021-04-13 西安交通大学 基于介质阻挡放电等离子体的材料改性装置、系统及方法
CN115717233B (zh) * 2022-04-14 2025-05-27 南京工业大学 一种多模式低温等离子体金属表面薄膜沉积装置及方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990009578A (ko) * 1997-07-03 1999-02-05 지종기 진공 분위기를 형성하여 전극의 내구성을 높인 고온 직류 플라즈마 토취
JP2002018276A (ja) * 2000-07-10 2002-01-22 Pearl Kogyo Kk 大気圧プラズマ処理装置
KR100760551B1 (ko) * 2006-06-27 2007-09-20 주식회사 에이피피 상압 플라즈마 발생장치
KR100789562B1 (ko) * 2005-12-01 2007-12-28 주식회사 엘지화학 금속적층판의 제조방법 및 이에 의해 제조된 금속적층판
KR101092963B1 (ko) * 2010-01-26 2011-12-12 비아이 이엠티 주식회사 대기압 플라즈마 발생장치

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69929271T2 (de) * 1998-10-26 2006-09-21 Matsushita Electric Works, Ltd., Kadoma Apparat und Verfahren zur Plasmabehandlung
EP1073091A3 (en) * 1999-07-27 2004-10-06 Matsushita Electric Works, Ltd. Electrode for plasma generation, plasma treatment apparatus using the electrode, and plasma treatment with the apparatus
JP2003208999A (ja) * 2002-01-10 2003-07-25 Sekisui Chem Co Ltd 放電プラズマ処理方法及びその装置
KR20030091438A (ko) * 2002-05-28 2003-12-03 (주)플라젠 플라즈마 분사장치 및 그 장치를 이용한 표면처리방법
US20070002515A1 (en) * 2003-05-14 2007-01-04 Mamoru Hino Plasma processing apparatus and method for manufacturing thereof
CN1826843A (zh) * 2003-07-23 2006-08-30 积水化学工业株式会社 等离子处理装置和电极结构
JP2006040667A (ja) 2004-07-26 2006-02-09 Sharp Corp プラズマ表面処理装置
CN101277575A (zh) * 2007-03-28 2008-10-01 赖中平 在彩色滤光片上提高喷墨打印产出量率的制程方法及其装置
CN103889138B (zh) * 2012-12-24 2016-06-29 中国科学院微电子研究所 等离子体放电装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990009578A (ko) * 1997-07-03 1999-02-05 지종기 진공 분위기를 형성하여 전극의 내구성을 높인 고온 직류 플라즈마 토취
JP2002018276A (ja) * 2000-07-10 2002-01-22 Pearl Kogyo Kk 大気圧プラズマ処理装置
KR100789562B1 (ko) * 2005-12-01 2007-12-28 주식회사 엘지화학 금속적층판의 제조방법 및 이에 의해 제조된 금속적층판
KR100760551B1 (ko) * 2006-06-27 2007-09-20 주식회사 에이피피 상압 플라즈마 발생장치
KR101092963B1 (ko) * 2010-01-26 2011-12-12 비아이 이엠티 주식회사 대기압 플라즈마 발생장치

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110124482A (zh) * 2018-02-09 2019-08-16 中国石油化工股份有限公司 低温等离子体反应器和分解硫化氢的方法
US20200398245A1 (en) * 2018-02-09 2020-12-24 China Petroleum & Chemical Corporation Low temperature plasma reaction device and hydrogen sulfide decomposition method
US11691119B2 (en) * 2018-02-09 2023-07-04 China Petroleum & Chemical Corporation Low temperature plasma reaction device and hydrogen sulfide decomposition method
CN112166650A (zh) * 2018-05-30 2021-01-01 东芝三菱电机产业系统株式会社 活性气体生成装置
CN112166650B (zh) * 2018-05-30 2023-06-20 东芝三菱电机产业系统株式会社 活性气体生成装置

Also Published As

Publication number Publication date
CN107624268A (zh) 2018-01-23
JP6788615B2 (ja) 2020-11-25
KR20160136551A (ko) 2016-11-30
CN107624268B (zh) 2019-11-05
JP2018521454A (ja) 2018-08-02
KR101682903B1 (ko) 2016-12-20

Similar Documents

Publication Publication Date Title
WO2016186431A1 (ko) 표면 처리용 선형 유전체 장벽 방전 플라즈마 발생장치
WO2018008806A1 (ko) 대기압 유전체 장벽 방전 플라즈마를 이용한 이차전지의 분리막 처리 방법
WO2017119704A1 (ko) 플라즈마 처리 장치
WO2020231141A1 (ko) 에어 벤트를 포함하는 슬롯 다이 코팅 장치
WO2015065082A1 (ko) 전지 셀 적층 지그
WO2018155811A1 (ko) 이차전지용 플라즈마 발생장치 및 그를 포함하는 라미네이션 시스템
WO2012077843A1 (ko) 플라즈마 발생 장치
WO2021177489A1 (ko) 마찰 발전 장치
WO2021040285A1 (ko) 전해액 검출장치 및 그를 포함한 이차전지 이송설비
KR101843770B1 (ko) 선택적 표면처리가 가능한 선형 플라즈마 발생 장치
KR101774816B1 (ko) 선택적 표면처리가 가능한 선형 플라즈마 발생 장치
WO2017164508A1 (ko) 높은 공간 선택성을 가지는 선형 플라즈마 발생 장치
WO2018074846A1 (ko) 이차 전지
KR20160137452A (ko) 표면 처리용 선형 유전체 장벽 방전 플라즈마 발생장치
WO2016017918A1 (ko) 이온 소스
WO2017104903A1 (en) Electrode assembly for dielectric barrier discharge and plasma processing device using the same
WO2023101264A1 (ko) 초음파 용접 장치 및 그에 의해 제조된 전극 조립체
WO2022092576A1 (ko) 포케팅 양극체의 제조방법, 포케팅 양극체 및 포케팅 양극체를 포함하는 전극조립체
WO2022092570A1 (ko) 포케팅 양극체의 제조방법, 포케팅 양극체 및 포케팅 양극체를 포함하는 전극조립체
WO2023068815A1 (ko) 전극시트의 노칭시스템
WO2023113329A1 (ko) 전극조립체를 실링하는 방법 및 그 실링장치
WO2021080239A1 (ko) 전극 조립체 제조방법 및 이를 통해 제조된 전극 조립체
WO2023033612A1 (ko) 이물 제거 장치
WO2024085625A1 (ko) 배터리셀, 이의 제조방법 및 이를 포함하는 직접 수냉용 배터리모듈
WO2024019595A1 (ko) 이차전지 제조장치, 이를 이용한 이차전지 제조방법 및 이를 이용하여 제조된 이차전지

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 16796758

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2017559699

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 16796758

Country of ref document: EP

Kind code of ref document: A1