CN107534003B - 用于校正基板变形的方法与设备 - Google Patents

用于校正基板变形的方法与设备 Download PDF

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Publication number
CN107534003B
CN107534003B CN201680024337.3A CN201680024337A CN107534003B CN 107534003 B CN107534003 B CN 107534003B CN 201680024337 A CN201680024337 A CN 201680024337A CN 107534003 B CN107534003 B CN 107534003B
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CN
China
Prior art keywords
substrate
predetermined temperature
process chamber
support
showerhead
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201680024337.3A
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English (en)
Chinese (zh)
Other versions
CN107534003A (zh
Inventor
J·S·卢
T·F·高
S·斯如纳乌卡拉苏
K·埃卢马莱
E·S·白
J-L·苏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority claimed from PCT/US2016/030079 external-priority patent/WO2016176566A1/en
Publication of CN107534003A publication Critical patent/CN107534003A/zh
Application granted granted Critical
Publication of CN107534003B publication Critical patent/CN107534003B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H10P95/906—Thermal treatments, e.g. annealing or sintering for altering the shape of semiconductors, e.g. smoothing the surface
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B17/00—Furnaces of a kind not covered by any of groups F27B1/00 - F27B15/00
    • F27B17/0016—Chamber type furnaces
    • F27B17/0025—Chamber type furnaces specially adapted for treating semiconductor wafers
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B9/00—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity
    • F27B9/02—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity of multiple-track type; of multiple-chamber type; Combinations of furnaces
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B9/00—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity
    • F27B9/06—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity heated without contact between combustion gases and charge; electrically heated
    • F27B9/10—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity heated without contact between combustion gases and charge; electrically heated heated by hot air or gas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0616—Monitoring of warpages, curvatures, damages, defects or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Combustion & Propulsion (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
CN201680024337.3A 2015-04-29 2016-04-29 用于校正基板变形的方法与设备 Expired - Fee Related CN107534003B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
IN1190/DEL/2015 2015-04-29
IN1190DE2015 2015-04-29
PCT/US2016/030079 WO2016176566A1 (en) 2015-04-29 2016-04-29 Methods and apparatus for correcting substrate deformity

Publications (2)

Publication Number Publication Date
CN107534003A CN107534003A (zh) 2018-01-02
CN107534003B true CN107534003B (zh) 2022-07-26

Family

ID=57205753

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201680024337.3A Expired - Fee Related CN107534003B (zh) 2015-04-29 2016-04-29 用于校正基板变形的方法与设备

Country Status (6)

Country Link
US (1) US9818624B2 (https=)
JP (1) JP6839096B2 (https=)
KR (1) KR102589733B1 (https=)
CN (1) CN107534003B (https=)
SG (2) SG10202108210SA (https=)
TW (1) TWI697974B (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10325790B2 (en) * 2016-04-29 2019-06-18 Applied Materials, Inc. Methods and apparatus for correcting substrate deformity
US10612135B2 (en) * 2016-07-19 2020-04-07 Applied Materials, Inc. Method and system for high temperature clean
KR102015336B1 (ko) 2017-06-12 2019-08-28 삼성전자주식회사 반도체 패키지 기판의 휨 감소 방법 및 휨 감소 장치
CN108803702B (zh) * 2018-06-26 2020-12-29 武汉华星光电技术有限公司 阵列基板制程中的温度调控系统及方法
US10889894B2 (en) * 2018-08-06 2021-01-12 Applied Materials, Inc. Faceplate with embedded heater
US11421316B2 (en) * 2018-10-26 2022-08-23 Applied Materials, Inc. Methods and apparatus for controlling warpage in wafer level packaging processes
US20210057238A1 (en) * 2019-08-20 2021-02-25 Applied Materials, Inc. Methods and apparatus for contactless substrate warpage correction
JP7365423B2 (ja) * 2019-10-04 2023-10-19 東京エレクトロン株式会社 加熱冷却装置及び加熱冷却方法
US11177146B2 (en) * 2019-10-31 2021-11-16 Applied Materials, Inc. Methods and apparatus for processing a substrate
WO2022169561A1 (en) * 2021-02-05 2022-08-11 Applied Materials, Inc. Apparatus, methods, and systems of using hydrogen radicals for thermal annealing
EP4503108A1 (en) 2022-03-25 2025-02-05 Nikon Corporation Correction apparatus, exposure apparatus, coater/developer apparatus, exposure system, exposure method, and device manufacturing method
CN115747955A (zh) * 2022-10-26 2023-03-07 中环领先半导体材料有限公司 一种改善Logic产品衬底外延后弯曲度和翘曲度工艺
US12224192B2 (en) 2022-11-10 2025-02-11 Applied Materials, Inc. Bowed substrate clamping method, apparatus, and system

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6189694A (ja) * 1984-10-09 1986-05-07 ソニー株式会社 プリント基板の形状矯正方法及びその装置
US20030080112A1 (en) * 2000-02-01 2003-05-01 Van Bilsen Frank B.M. System of controlling the temperature of a processing chamber
CN102481650A (zh) * 2009-08-27 2012-05-30 阿有米工业股份有限公司 加热熔融处理装置以及加热熔融处理方法
US20140103806A1 (en) * 2012-10-17 2014-04-17 Lam Research Corporation Pressure controlled heat pipe temperature control plate

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01160080A (ja) * 1987-12-17 1989-06-22 Sumitomo Bakelite Co Ltd プリント回路板の反り直し方法
JPH07112715B2 (ja) * 1993-10-28 1995-12-06 菱華産業株式会社 エアシャワーを用いた遠赤外線アニール機
JPH0825086A (ja) * 1994-07-07 1996-01-30 Tanaka Seisakusho Kk 鋼材加工装置
JP5374039B2 (ja) 2007-12-27 2013-12-25 東京エレクトロン株式会社 基板処理方法、基板処理装置及び記憶媒体
TWI461568B (zh) * 2008-05-28 2014-11-21 Aixtron Inc 熱梯度加強化學氣相沈積
JP5673523B2 (ja) 2011-12-28 2015-02-18 東京エレクトロン株式会社 基板処理方法、基板処理装置及び記憶媒体
JP2015035584A (ja) * 2013-07-11 2015-02-19 東京エレクトロン株式会社 熱処理装置及び成膜システム
JP5905509B2 (ja) 2014-05-14 2016-04-20 東京エレクトロン株式会社 接合装置、接合システム、接合方法、プログラム及びコンピュータ記憶媒体

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6189694A (ja) * 1984-10-09 1986-05-07 ソニー株式会社 プリント基板の形状矯正方法及びその装置
US20030080112A1 (en) * 2000-02-01 2003-05-01 Van Bilsen Frank B.M. System of controlling the temperature of a processing chamber
CN102481650A (zh) * 2009-08-27 2012-05-30 阿有米工业股份有限公司 加热熔融处理装置以及加热熔融处理方法
US20140103806A1 (en) * 2012-10-17 2014-04-17 Lam Research Corporation Pressure controlled heat pipe temperature control plate

Also Published As

Publication number Publication date
SG10202108210SA (en) 2021-09-29
US20160322234A1 (en) 2016-11-03
CN107534003A (zh) 2018-01-02
KR20180002714A (ko) 2018-01-08
JP2018518044A (ja) 2018-07-05
JP6839096B2 (ja) 2021-03-03
TWI697974B (zh) 2020-07-01
US9818624B2 (en) 2017-11-14
SG11201708116RA (en) 2017-11-29
TW201705335A (zh) 2017-02-01
KR102589733B1 (ko) 2023-10-17

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Granted publication date: 20220726