JP6839096B2 - 基板の変形を矯正する方法及び装置 - Google Patents

基板の変形を矯正する方法及び装置 Download PDF

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Publication number
JP6839096B2
JP6839096B2 JP2017556588A JP2017556588A JP6839096B2 JP 6839096 B2 JP6839096 B2 JP 6839096B2 JP 2017556588 A JP2017556588 A JP 2017556588A JP 2017556588 A JP2017556588 A JP 2017556588A JP 6839096 B2 JP6839096 B2 JP 6839096B2
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JP
Japan
Prior art keywords
substrate
predetermined temperature
support
processing chamber
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2017556588A
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English (en)
Japanese (ja)
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JP2018518044A5 (https=
JP2018518044A (ja
Inventor
ジェン セルン リュウ，
ジェン セルン リュウ，
タック フン コー，
タック フン コー，
シリスカンタラジャ ティルナヴカラス，
シリスカンタラジャ ティルナヴカラス，
カルシック エルマライ，
カルシック エルマライ，
エン シェン ペー，
エン シェン ペー，
チュン−リャン スー，
チュン−リャン スー，
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
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Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority claimed from PCT/US2016/030079 external-priority patent/WO2016176566A1/en
Publication of JP2018518044A publication Critical patent/JP2018518044A/ja
Publication of JP2018518044A5 publication Critical patent/JP2018518044A5/ja
Application granted granted Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H10P95/906—Thermal treatments, e.g. annealing or sintering for altering the shape of semiconductors, e.g. smoothing the surface
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B17/00—Furnaces of a kind not covered by any of groups F27B1/00 - F27B15/00
    • F27B17/0016—Chamber type furnaces
    • F27B17/0025—Chamber type furnaces specially adapted for treating semiconductor wafers
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B9/00—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity
    • F27B9/02—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity of multiple-track type; of multiple-chamber type; Combinations of furnaces
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B9/00—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity
    • F27B9/06—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity heated without contact between combustion gases and charge; electrically heated
    • F27B9/10—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity heated without contact between combustion gases and charge; electrically heated heated by hot air or gas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0616—Monitoring of warpages, curvatures, damages, defects or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Combustion & Propulsion (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
JP2017556588A 2015-04-29 2016-04-29 基板の変形を矯正する方法及び装置 Expired - Fee Related JP6839096B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
IN1190/DEL/2015 2015-04-29
IN1190DE2015 2015-04-29
US15/142,220 US9818624B2 (en) 2015-04-29 2016-04-29 Methods and apparatus for correcting substrate deformity
PCT/US2016/030079 WO2016176566A1 (en) 2015-04-29 2016-04-29 Methods and apparatus for correcting substrate deformity
US15/142,220 2016-04-29

Publications (3)

Publication Number Publication Date
JP2018518044A JP2018518044A (ja) 2018-07-05
JP2018518044A5 JP2018518044A5 (https=) 2019-06-06
JP6839096B2 true JP6839096B2 (ja) 2021-03-03

Family

ID=57205753

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017556588A Expired - Fee Related JP6839096B2 (ja) 2015-04-29 2016-04-29 基板の変形を矯正する方法及び装置

Country Status (6)

Country Link
US (1) US9818624B2 (https=)
JP (1) JP6839096B2 (https=)
KR (1) KR102589733B1 (https=)
CN (1) CN107534003B (https=)
SG (2) SG10202108210SA (https=)
TW (1) TWI697974B (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10325790B2 (en) * 2016-04-29 2019-06-18 Applied Materials, Inc. Methods and apparatus for correcting substrate deformity
US10612135B2 (en) * 2016-07-19 2020-04-07 Applied Materials, Inc. Method and system for high temperature clean
KR102015336B1 (ko) 2017-06-12 2019-08-28 삼성전자주식회사 반도체 패키지 기판의 휨 감소 방법 및 휨 감소 장치
CN108803702B (zh) * 2018-06-26 2020-12-29 武汉华星光电技术有限公司 阵列基板制程中的温度调控系统及方法
US10889894B2 (en) * 2018-08-06 2021-01-12 Applied Materials, Inc. Faceplate with embedded heater
US11421316B2 (en) * 2018-10-26 2022-08-23 Applied Materials, Inc. Methods and apparatus for controlling warpage in wafer level packaging processes
US20210057238A1 (en) * 2019-08-20 2021-02-25 Applied Materials, Inc. Methods and apparatus for contactless substrate warpage correction
JP7365423B2 (ja) * 2019-10-04 2023-10-19 東京エレクトロン株式会社 加熱冷却装置及び加熱冷却方法
US11177146B2 (en) * 2019-10-31 2021-11-16 Applied Materials, Inc. Methods and apparatus for processing a substrate
WO2022169561A1 (en) * 2021-02-05 2022-08-11 Applied Materials, Inc. Apparatus, methods, and systems of using hydrogen radicals for thermal annealing
EP4503108A1 (en) 2022-03-25 2025-02-05 Nikon Corporation Correction apparatus, exposure apparatus, coater/developer apparatus, exposure system, exposure method, and device manufacturing method
CN115747955A (zh) * 2022-10-26 2023-03-07 中环领先半导体材料有限公司 一种改善Logic产品衬底外延后弯曲度和翘曲度工艺
US12224192B2 (en) 2022-11-10 2025-02-11 Applied Materials, Inc. Bowed substrate clamping method, apparatus, and system

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6189694A (ja) * 1984-10-09 1986-05-07 ソニー株式会社 プリント基板の形状矯正方法及びその装置
JPH01160080A (ja) * 1987-12-17 1989-06-22 Sumitomo Bakelite Co Ltd プリント回路板の反り直し方法
JPH07112715B2 (ja) * 1993-10-28 1995-12-06 菱華産業株式会社 エアシャワーを用いた遠赤外線アニール機
JPH0825086A (ja) * 1994-07-07 1996-01-30 Tanaka Seisakusho Kk 鋼材加工装置
US6191399B1 (en) 2000-02-01 2001-02-20 Asm America, Inc. System of controlling the temperature of a processing chamber
JP5374039B2 (ja) 2007-12-27 2013-12-25 東京エレクトロン株式会社 基板処理方法、基板処理装置及び記憶媒体
TWI461568B (zh) * 2008-05-28 2014-11-21 Aixtron Inc 熱梯度加強化學氣相沈積
JP5424201B2 (ja) * 2009-08-27 2014-02-26 アユミ工業株式会社 加熱溶融処理装置および加熱溶融処理方法
JP5673523B2 (ja) 2011-12-28 2015-02-18 東京エレクトロン株式会社 基板処理方法、基板処理装置及び記憶媒体
US8975817B2 (en) * 2012-10-17 2015-03-10 Lam Research Corporation Pressure controlled heat pipe temperature control plate
JP2015035584A (ja) * 2013-07-11 2015-02-19 東京エレクトロン株式会社 熱処理装置及び成膜システム
JP5905509B2 (ja) 2014-05-14 2016-04-20 東京エレクトロン株式会社 接合装置、接合システム、接合方法、プログラム及びコンピュータ記憶媒体

Also Published As

Publication number Publication date
SG10202108210SA (en) 2021-09-29
US20160322234A1 (en) 2016-11-03
CN107534003A (zh) 2018-01-02
KR20180002714A (ko) 2018-01-08
JP2018518044A (ja) 2018-07-05
TWI697974B (zh) 2020-07-01
US9818624B2 (en) 2017-11-14
SG11201708116RA (en) 2017-11-29
CN107534003B (zh) 2022-07-26
TW201705335A (zh) 2017-02-01
KR102589733B1 (ko) 2023-10-17

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