CN101348904B - 半导体制造装置 - Google Patents

半导体制造装置 Download PDF

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CN101348904B
CN101348904B CN2008101272417A CN200810127241A CN101348904B CN 101348904 B CN101348904 B CN 101348904B CN 2008101272417 A CN2008101272417 A CN 2008101272417A CN 200810127241 A CN200810127241 A CN 200810127241A CN 101348904 B CN101348904 B CN 101348904B
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林有东
朴载皓
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Abstract

本发明涉及一种半导体制造装置，其维护或修理容易以使得由于基座的高温可快速降低而可提高制造效率。本发明涉及一种半导体制造装置，其由于用于加热半导体的加热器由外部加热装置加热而可提高制造效率。

Description

半导体制造装置
技术领域
本发明涉及一种半导体制造装置，且更具体地说涉及一种维护或修理容易以使得由于基座的高温可快速降低而可提高制造效率的半导体制造装置。 
本发明涉及一种半导体制造装置，其由于用于加热半导体的加热器由外部加热装置加热而可提高制造效率。 
背景技术
包括半导体制造装置的基座是由加热器加热以使得液晶显示器(LiquidCrystal Display，LCD)可维持预定温度的装置，其用于LCD CVD的工艺中。 
近来LCD面板的尺寸变大，且因此，LCD基座的尺寸扩大到超过2米。因此，为了容易地执行对设备的维护和修理，必须快速降低基座的温度。 
近来，如果基座需要从325℃降低到100℃，那么分别对于第5代基座需8小时，对于第6代基座需12小时，对于第7代基座需18小时。因此，LCD面板的尺寸越大，用于降低温度的时间越长。 
基座的温度不能快速地降低导致由于维护或修理困难而降低了生产率且增加了成本。 
此外，用于在制造半导体的工艺期间加热半导体的金属加热器具有以下问题：表面被用于在高温下原位清洁工艺(使用预定周期而用于清洁设备的步骤和用于减少清洁时间的方法)中的气体的氟离子腐蚀。 
此外，当使用氮化铝加热器时，热冲击非常强，且因此其可能在工艺期间或在温度上升或下降时破损。 
此外，由于氮化铝(Aluminum nitride，ALN)加热器非常昂贵而可导致 成本上升。 
上述问题导致在用于在高温下制造半导体的工艺期间出现异物，因为不能应用原位清洁(Cleaning，CLN)方法。此外，由于腔和加热器直接应用原位CLN进而导致时间损失，所以降低了生产率。 
为了解决上述问题，建议使用ALN加热器来替代金属加热器，然而，由于ALN加热器非常昂贵而导致成本增加且其使用期限可能变短。 
发明内容
已发明本发明来克服上述问题，本发明的目的在于用于LCD CVD的工艺的基座的温度可快速降低，使得可提高生产率且可降低成本。 
本发明的另一目的在于通过外部加热部件来加热用于加热半导体的加热器，使得可提高生产率。 
为了实现上述目的，本发明提供一种半导体制造装置，其包含：一基座主体；一循环型冷却管，其用于循环冷却空气，其具有一用于从一外部供应装置将冷却空气供应到基座主体的入口，和一用于将来自入口而在整个基座主体中循环的冷却空气排出的出口；和一加热器，其用于加热主体以保持LCD的温度，其中所述加热器安置在主体的最低部通过一第一罩盖而不会接触到冷却管，其中所述冷却管安置在用于覆盖加热器的第一罩盖的上部，且经安置以顺应加热器的位置，其中所述冷却管经安置以由一第二罩盖覆盖，其中所述第二罩盖经安置而在其上具有一第三盖罩，以防止在冷却管中循环的冷却空气的温度由于加热器的操作而快速上升。 
冷却管由铜(Cu)或不锈钢(Sus)制成，因此热传递和抗腐蚀性及耐热性质良好，且由于其安置在基座的主体中且加热器安置在其下方而不存在磁性。 
冷却管并不限制其外部形状和用于流动冷却空气的线路，且其中冷却空气是氦气(He)、工艺冷却空气(Process Cooling Air，PCW)和热传导液(Galden)的物质中的一种。 
基座不包含冷却管，使得冷却空气直接在第二罩盖中循环。 
为了实现上述目的，本发明提供一种半导体制造装置，其包含：一喷 头，其用于供应用于制造半导体的气体；一处理腔，其用于使用来自喷头的气体来执行制造半导体的工艺；一真空管线，其用于排出在制造半导体的工艺期间出现的气体；一干燥泵，其用于抽吸空气以将膜沉积到处理腔中的半导体(PE-CVD工艺)；一节流阀，其附接在真空管线处以控制从处理腔流入真空管线的空气的压力；一隔离闸门阀；一加热部件，其安置在处理腔中以加热半导体；一外部加热部件，其用于将加热气体供应到腔中的加热部件；以及一气体供应器，其用于将气体供应到外部加热部件。 
外部加热部件具有：一加热器，其用于加热从气体供应器供应的气体；一温度控制器，其用于控制加热器所加热的气体的温度；以及一加热气体流动管线，其用于将加热气体供应到加热部件。 
从外部加热部件供应到加热部件的气体是例如氮气(N2)、氦气(He)的惰性气体或空气，且由加热器在外部加热部件中加热，且通过温度控制器控制以具有50℃～1,200℃的范围。 
加热部件由材料ALN、不锈钢(Sus)、铬镍铁合金(Inconel)和铜制成。 
加热部件在其流动线路处具有温度感测装置。 
加热部件并不限制其外部形状和线路形状。 
附图说明
图1是根据本发明的半导体制造装置的液晶显示器的后视图； 
图2是图1的平面图； 
图3是图1的截面图； 
图4是根据本发明的另一实施例的LCD基座的截面图； 
图5是根据本发明的另一实施例的对晶片加热的概念图； 
图6是图5的结构图；以及 
图7a到图7f是图5和图6的加热部件的若干结构图。 
具体实施方式
如图1到图3中所示，液晶显示器基座10包含一用于循环冷却空气的 循环型冷却管20和一用于加热主体11以保持LCD的温度的加热器30，其中循环型冷却管20具有：一入口21，其用于从未图示的外部供应装置将冷却空气供应到基座主体11；和一出口22，其用于将来自入口21而在整个基座主体11中循环的冷却空气排出。 
加热器30安置在主体11的最低部通过一第一盖罩31而不会接触到冷却管20。冷却管20安置在用于覆盖加热器30的第一盖罩31的上部，且经安置以顺应加热器30的位置。 
冷却管20经安置由一第二盖罩32覆盖。第二盖罩32经安置而在其上具有一第三盖罩33，以防止在冷却管20中循环的冷却空气的温度由于加热器30的操作而快速上升。 
如图4中所示的冷却管20并不限制其外部形状和用于流动冷却空气的线路(例如圆形或方形)，且经安置而具有分离的为管形状的入口21和出口22。在图4中展示方形的冷却管20。 
冷却管20由铜(Cu)或不锈钢(Sus)制成，因此热传递和抗腐蚀性及耐热性质良好，且由于其安置在基座10的主体11中且加热器30安置在其下方而不存在磁性。 
具有上述结构的本发明在通过从外部供应装置穿过入口21供应冷却空气(例如无害气体、氦气(He)、PCW和Galden的冷却物质)的处理之后在以下状况时操作：在加热器30操作以保持LCD的温度的同时出现例如过热的异常状态时；和需要对设备进行维护或修理时。 
因此，冷却空气通过冷却管20在基座10中循环，使得基座10的温度降低。在循环以降低基座10的温度之后，冷却空气穿过出口22排出。 
因为第一盖罩31将来自加热器30的热量与冷却空气隔离，所以防止在冷却管20中流动的冷却空气的温度快速上升。还由于覆盖冷却管20的第二盖罩32和第三盖罩33隔离了外部空气而防止冷却空气的温度快速上升。因此，基座10的温度可快速降低。 
在通过冷却空气在冷却管20中流动而降低基座10的温度之后，执行对设备的维护或修理。 
同时，本发明的基座10可不包含冷却管20。在此状况下，冷却空气 直接在第二盖罩32中循环。即，第二盖罩32用以替代冷却管20来循环冷却空气。 
详细描述本发明的另一实施例 
如图5和图6中所示，根据本发明的半导体制造装置包含：一喷头40，其用于供应用以制造半导体(晶片)的气体；一处理腔50，其用于使用来自喷头40的气体来执行制造半导体的工艺；一真空管线(管)60，其用于排出在制造半导体的工艺期间出现的气体；一干燥泵70，其用于抽吸空气以将膜沉积到处理腔50中的半导体(PE-CVD工艺)；一节流阀61，其附接在真空管线60处以控制从处理腔50流入真空管线60中的空气的压力；一隔离闸门阀62；一加热部件80，其安置在处理腔50中以加热半导体；一外部加热部件90，其用于将加热气体供应到腔50中的加热部件80；和一气体供应器100，其用于将气体供应到外部加热部件90。 
外部加热部件90具有用于加热从气体供应器100供应的气体的一加热器102和用于控制加热器102所加热的气体的温度的一温度控制器103。 
此外，外部加热部件90具有用于将加热气体供应到加热部件80的一加热气体流动管线111。 
从外部加热部件90供应到加热部件80的气体是例如N2、He的惰性气体或空气，且由加热器102在外部加热部件90中加热，且通过温度控制器1 03控制以具有50℃～1,200℃的范围。 
加热部件80由材料ALN制成，且具有用于循环和排出加热源(例如来自外部加热部件90的加热气体)的一经加热气体流动线路113。 
此外，加热部件80在其流动线路113和加热部件80处具有温度感测装置114和115，以用于感测循环经加热气体的加热部件80的温度。因此，温度控制器103基于所感测的温度来控制外部加热部件90所加热的加热气体的温度。 
此外，加热部件80由材料Sus、铬镍铁合金、铜等制成。 
现在，将解释根据本发明的具有上述结构的半导体制造装置的操作。 
在将气体从喷头40供应到处理腔50的同时执行制造半导体的工艺。通过节流阀61来控制在制造半导体的工艺期间在腔50中出现的气体的压 力，且通过真空管线60排出所述气体。通过泵70的抽吸将膜沉积在腔50中所制造的半导体上。即，对半导体执行PE-CVD工艺。 
此时，从外部加热部件90通过管线111供应的经加热气体在加热部件80的线路113中循环(流动)，使得半导体被加热。在线路113中循环的经加热气体被排出到外部。 
同时，如图7a到图7f中所示，加热部件80并不限制其形状，例如圆形或方形。然而，加热部件80的形状应基于从外部加热部件90供应的经加热气体的温度或持续时间来设计，使得加热温度是恒定的。 
即，线路113基于半导体的温度根据工艺而不等而具有不同形状以维持特定温度。 
本发明具有以下优点。 
第一，因为基座的温度可通过冷却空气在冷却管中流动而快速降低，所以维护或修理是容易的。 
第二，因为对设备的维护或修理容易，所以成本可降低且生产率可提高。 
第三，因为通过外部加热部件来加热由抗氟的氮化铝制成的加热器，所以生产率可提高。 

Claims (3)

1.一种半导体制造装置，其包含：
一基座主体；
一循环型冷却管，其用于循环冷却空气，其具有一用于从一外部供应装置将冷却空气供应到一基座主体的入口，和一用于将来自所述入口而在所述整个基座主体中循环的所述冷却空气排出的出口；以及
一加热器，其用于加热所述主体以保持液晶显示器的温度，
其中所述加热器安置在所述主体的最低部通过一第一罩盖而不会接触到所述冷却管，
其中所述冷却管安置在用于覆盖所述加热器的所述第一罩盖的上部，且经安置以顺应所述加热器的位置，
其中所述冷却管经安置以由一第二罩盖覆盖，
其中所述第二罩盖经安置而在其上具有一第三盖罩，用以防止在所述冷却管中循环的所述冷却空气由于所述加热器的操作而快速上升。
2.根据权利要求1所述的装置，其中所述冷却管并不限制其外部形状和用于流动冷却空气的线路，且其中所述冷却空气是从氦气和Galden的物质的其中之一选择。
3.根据权利要求1所述的装置，其中所述基座不包含所述冷却管，所述冷却空气直接在所述第二罩盖中循环。
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