JP6839096B2 - 基板の変形を矯正する方法及び装置 - Google Patents
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
- H01L21/3247—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering for altering the shape, e.g. smoothing the surface
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B17/00—Furnaces of a kind not covered by any preceding group
- F27B17/0016—Chamber type furnaces
- F27B17/0025—Especially adapted for treating semiconductor wafers
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B9/00—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity
- F27B9/02—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity of multiple-track type; of multiple-chamber type; Combinations of furnaces
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B9/00—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity
- F27B9/06—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity heated without contact between combustion gases and charge; electrically heated
- F27B9/10—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity heated without contact between combustion gases and charge; electrically heated heated by hot air or gas
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
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- Microelectronics & Electronic Packaging (AREA)
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- Combustion & Propulsion (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Description
Claims (15)
- 基板平坦化システムであって、
チャッキング機構を含まない第1の基板支持体と、第1のシャワーヘッドとを有する第1の処理チャンバと、
前記第1の基板支持体の第1の支持体表面に置かれた基板を加熱するために前記第1の基板支持体に配置された第1のヒータと、
前記第1のシャワーヘッドを通って前記第1の処理チャンバの第1の処理容積に流入する処理ガスを加熱するように構成された第2のヒータと、
加熱されない第2の基板支持体を有する第2の処理チャンバと
を備え、前記第1の処理チャンバと前記第2の処理チャンバは両方とも、非減圧チャンバである、基板平坦化システム。 - 前記第1の処理チャンバは更に、
前記第1のヒータに電気的に接続された第1の電力供給装置と、
前記第1の電力供給装置に接続され、前記第1の電力供給装置を制御する第1の温度コントローラと、
前記第2のヒータに電気的に接続された第2の電力供給装置と、
前記第2の電力供給装置に接続され、前記第2の電力供給装置を制御する第2の温度コントローラと
を備える、請求項1に記載の基板平坦化システム。 - 前記第1の処理チャンバは更に、
前記第1の支持体表面の温度を測定するために、前記第1の基板支持体の第1のシャフトを通して前記第1の基板支持体の第1の支持体表面に近接するように配置された熱電対であって、前記第1の温度コントローラと前記第2の温度コントローラに作動可能に接続された熱電対を備える、請求項2に記載の基板平坦化システム。 - 前記第1の処理チャンバは更に、
前記第1のシャワーヘッドに流体接続され、前記第1のシャワーヘッドに前記処理ガスを供給する第1のガスパネルを備える、請求項1から3のいずれか一項に記載の基板平坦化システム。 - 前記第2のヒータは、前記第1のシャワーヘッドに配置される、請求項1から3のいずれか一項に記載の基板平坦化システム。
- 前記第2の基板支持体は、冷却剤を流すように構成された第1の複数の冷却剤チャネルを含む、請求項1から3のいずれか一項に記載の基板平坦化システム。
- 前記第2の処理チャンバは更に、
冷却剤を流すように構成された第2の複数の冷却剤チャネルを含む第2のシャワーヘッドを備える、請求項6に記載の基板平坦化システム。 - 基板の変形を矯正する方法であって、
ゆがんだ基板を第1の処理チャンバの第1の基板支持体に置くことと、
前記ゆがんだ基板を第1の既定温度に加熱することと、
前記ゆがんだ基板を平坦化された基板に変形させるように、第1の期間の間、前記第1の既定温度で、前記ゆがんだ基板を保持することと、
前記平坦化された基板を、前記第1の既定温度よりも低い第2の既定温度に冷却することと、
第2の処理チャンバの第2の基板支持体に前記平坦化された基板を置くことと、
前記平坦化された基板を前記第2の既定温度よりも低い第3の既定温度に冷却することと
を含む方法。 - 前記ゆがんだ基板を前記第1の既定温度に加熱することは、
前記第1の基板支持体に配置されたヒータを使用して、前記第1の基板支持体の第1の支持体表面を加熱することと、
第4の既定温度で第1のシャワーヘッドを通して前記第1の処理チャンバに不活性ガスである処理ガスを流入させることとを含む、請求項8に記載の方法。 - 前記平坦化された基板を前記第2の既定温度に冷却することは、
前記処理ガスの温度を、前記第4の既定温度より低い第5の既定温度に低下させることを含む、請求項9に記載の方法。 - 前記第1の既定温度は約150℃から約160℃であり、
前記第1の期間は約10秒から約2分であり、
前記第2の既定温度は、約130℃以下であり、
前記第3の既定温度はおおよそ室温であり、
前記第4の既定温度は約160℃と約210℃の間であり、
前記第5の既定温度は約25℃と130℃の間である、
請求項10に記載の方法。 - 前記平坦化された基板を前記第3の既定温度に冷却することは、前記第2の基板支持体に配置された第1の複数の冷却剤チャネルを通して第1の冷却剤を流すことを含む、請求項8から11のいずれか一項に記載の方法。
- 前記平坦化された基板を前記第3の既定温度に冷却することは更に、
前記第2の処理チャンバに配置された第2のシャワーヘッドを通して、不活性ガスである処理ガスを流すことと、
前記処理ガスを冷却するために、前記第2のシャワーヘッドに配置された第2の複数の冷却剤チャネルを通して第2の冷却剤を流すことと
を含む、請求項12に記載の方法。 - 基板の変形を矯正する方法であって、
ゆがんだ基板を約150℃と約220℃の間の第1の既定温度に加熱することと、
第1の期間の間、前記第1の既定温度で、前記基板を保持することと、
前記基板を平坦化するために、基板支持体内の複数の熱伝達チャネルを通して冷却剤を流すことによって、前記基板を前記第1の既定温度より低い第2の既定温度に冷却することと、
平坦化された基板を前記第2の既定温度より低い第3の既定温度に冷却することと、
を含む方法。 - 前記第1の既定温度は約150℃と約160℃の間であり、前記第1の期間は約30秒から約120秒の間である、請求項14に記載の方法。
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Application Number | Priority Date | Filing Date | Title |
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IN1190/DEL/2015 | 2015-04-29 | ||
IN1190DE2015 | 2015-04-29 | ||
US15/142,220 US9818624B2 (en) | 2015-04-29 | 2016-04-29 | Methods and apparatus for correcting substrate deformity |
US15/142,220 | 2016-04-29 | ||
PCT/US2016/030079 WO2016176566A1 (en) | 2015-04-29 | 2016-04-29 | Methods and apparatus for correcting substrate deformity |
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JP2018518044A JP2018518044A (ja) | 2018-07-05 |
JP2018518044A5 JP2018518044A5 (ja) | 2019-06-06 |
JP6839096B2 true JP6839096B2 (ja) | 2021-03-03 |
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US (1) | US9818624B2 (ja) |
JP (1) | JP6839096B2 (ja) |
KR (1) | KR102589733B1 (ja) |
CN (1) | CN107534003B (ja) |
SG (2) | SG10202108210SA (ja) |
TW (1) | TWI697974B (ja) |
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US10325790B2 (en) * | 2016-04-29 | 2019-06-18 | Applied Materials, Inc. | Methods and apparatus for correcting substrate deformity |
US10612135B2 (en) * | 2016-07-19 | 2020-04-07 | Applied Materials, Inc. | Method and system for high temperature clean |
KR102015336B1 (ko) | 2017-06-12 | 2019-08-28 | 삼성전자주식회사 | 반도체 패키지 기판의 휨 감소 방법 및 휨 감소 장치 |
CN108803702B (zh) * | 2018-06-26 | 2020-12-29 | 武汉华星光电技术有限公司 | 阵列基板制程中的温度调控系统及方法 |
US11421316B2 (en) * | 2018-10-26 | 2022-08-23 | Applied Materials, Inc. | Methods and apparatus for controlling warpage in wafer level packaging processes |
US20210057238A1 (en) * | 2019-08-20 | 2021-02-25 | Applied Materials, Inc. | Methods and apparatus for contactless substrate warpage correction |
JP7365423B2 (ja) * | 2019-10-04 | 2023-10-19 | 東京エレクトロン株式会社 | 加熱冷却装置及び加熱冷却方法 |
US11177146B2 (en) * | 2019-10-31 | 2021-11-16 | Applied Materials, Inc. | Methods and apparatus for processing a substrate |
WO2022169561A1 (en) * | 2021-02-05 | 2022-08-11 | Applied Materials, Inc. | Apparatus, methods, and systems of using hydrogen radicals for thermal annealing |
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JPS6189694A (ja) * | 1984-10-09 | 1986-05-07 | ソニー株式会社 | プリント基板の形状矯正方法及びその装置 |
JPH01160080A (ja) * | 1987-12-17 | 1989-06-22 | Sumitomo Bakelite Co Ltd | プリント回路板の反り直し方法 |
JPH07112715B2 (ja) * | 1993-10-28 | 1995-12-06 | 菱華産業株式会社 | エアシャワーを用いた遠赤外線アニール機 |
JPH0825086A (ja) * | 1994-07-07 | 1996-01-30 | Tanaka Seisakusho Kk | 鋼材加工装置 |
US6191399B1 (en) | 2000-02-01 | 2001-02-20 | Asm America, Inc. | System of controlling the temperature of a processing chamber |
JP5374039B2 (ja) | 2007-12-27 | 2013-12-25 | 東京エレクトロン株式会社 | 基板処理方法、基板処理装置及び記憶媒体 |
EP2294244B1 (en) * | 2008-05-28 | 2016-10-05 | Aixtron SE | Thermal gradient enhanced chemical vapour deposition. |
JP5424201B2 (ja) * | 2009-08-27 | 2014-02-26 | アユミ工業株式会社 | 加熱溶融処理装置および加熱溶融処理方法 |
JP5673523B2 (ja) | 2011-12-28 | 2015-02-18 | 東京エレクトロン株式会社 | 基板処理方法、基板処理装置及び記憶媒体 |
US8975817B2 (en) * | 2012-10-17 | 2015-03-10 | Lam Research Corporation | Pressure controlled heat pipe temperature control plate |
JP2015035584A (ja) | 2013-07-11 | 2015-02-19 | 東京エレクトロン株式会社 | 熱処理装置及び成膜システム |
JP5905509B2 (ja) | 2014-05-14 | 2016-04-20 | 東京エレクトロン株式会社 | 接合装置、接合システム、接合方法、プログラム及びコンピュータ記憶媒体 |
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- 2016-04-29 CN CN201680024337.3A patent/CN107534003B/zh active Active
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- 2016-04-29 KR KR1020177034114A patent/KR102589733B1/ko active IP Right Grant
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KR20180002714A (ko) | 2018-01-08 |
TW201705335A (zh) | 2017-02-01 |
US20160322234A1 (en) | 2016-11-03 |
US9818624B2 (en) | 2017-11-14 |
TWI697974B (zh) | 2020-07-01 |
CN107534003B (zh) | 2022-07-26 |
SG10202108210SA (en) | 2021-09-29 |
KR102589733B1 (ko) | 2023-10-17 |
CN107534003A (zh) | 2018-01-02 |
JP2018518044A (ja) | 2018-07-05 |
SG11201708116RA (en) | 2017-11-29 |
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