CN107534003B - 用于校正基板变形的方法与设备 - Google Patents

用于校正基板变形的方法与设备 Download PDF

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Publication number
CN107534003B
CN107534003B CN201680024337.3A CN201680024337A CN107534003B CN 107534003 B CN107534003 B CN 107534003B CN 201680024337 A CN201680024337 A CN 201680024337A CN 107534003 B CN107534003 B CN 107534003B
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CN
China
Prior art keywords
substrate
predetermined temperature
process chamber
support
showerhead
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201680024337.3A
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English (en)
Chinese (zh)
Other versions
CN107534003A (zh
Inventor
J·S·卢
T·F·高
S·斯如纳乌卡拉苏
K·埃卢马莱
E·S·白
J-L·苏
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Applied Materials Inc
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Applied Materials Inc
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Publication date
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Priority claimed from PCT/US2016/030079 external-priority patent/WO2016176566A1/en
Publication of CN107534003A publication Critical patent/CN107534003A/zh
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Publication of CN107534003B publication Critical patent/CN107534003B/zh
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H01L21/3247—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering for altering the shape, e.g. smoothing the surface
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B17/00—Furnaces of a kind not covered by any of groups F27B1/00 - F27B15/00
    • F27B17/0016—Chamber type furnaces
    • F27B17/0025—Chamber type furnaces specially adapted for treating semiconductor wafers
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B9/00—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity
    • F27B9/02—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity of multiple-track type; of multiple-chamber type; Combinations of furnaces
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B9/00—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity
    • F27B9/06—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity heated without contact between combustion gases and charge; electrically heated
    • F27B9/10—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity heated without contact between combustion gases and charge; electrically heated heated by hot air or gas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Combustion & Propulsion (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
CN201680024337.3A 2015-04-29 2016-04-29 用于校正基板变形的方法与设备 Expired - Fee Related CN107534003B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
IN1190DE2015 2015-04-29
IN1190/DEL/2015 2015-04-29
PCT/US2016/030079 WO2016176566A1 (en) 2015-04-29 2016-04-29 Methods and apparatus for correcting substrate deformity

Publications (2)

Publication Number Publication Date
CN107534003A CN107534003A (zh) 2018-01-02
CN107534003B true CN107534003B (zh) 2022-07-26

Family

ID=57205753

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201680024337.3A Expired - Fee Related CN107534003B (zh) 2015-04-29 2016-04-29 用于校正基板变形的方法与设备

Country Status (6)

Country Link
US (1) US9818624B2 (enExample)
JP (1) JP6839096B2 (enExample)
KR (1) KR102589733B1 (enExample)
CN (1) CN107534003B (enExample)
SG (2) SG10202108210SA (enExample)
TW (1) TWI697974B (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10325790B2 (en) * 2016-04-29 2019-06-18 Applied Materials, Inc. Methods and apparatus for correcting substrate deformity
US10612135B2 (en) * 2016-07-19 2020-04-07 Applied Materials, Inc. Method and system for high temperature clean
KR102015336B1 (ko) * 2017-06-12 2019-08-28 삼성전자주식회사 반도체 패키지 기판의 휨 감소 방법 및 휨 감소 장치
CN108803702B (zh) * 2018-06-26 2020-12-29 武汉华星光电技术有限公司 阵列基板制程中的温度调控系统及方法
US10889894B2 (en) * 2018-08-06 2021-01-12 Applied Materials, Inc. Faceplate with embedded heater
US11421316B2 (en) * 2018-10-26 2022-08-23 Applied Materials, Inc. Methods and apparatus for controlling warpage in wafer level packaging processes
US20210057238A1 (en) * 2019-08-20 2021-02-25 Applied Materials, Inc. Methods and apparatus for contactless substrate warpage correction
WO2021065203A1 (ja) * 2019-10-04 2021-04-08 東京エレクトロン株式会社 加熱冷却装置及び加熱冷却方法
US11177146B2 (en) * 2019-10-31 2021-11-16 Applied Materials, Inc. Methods and apparatus for processing a substrate
WO2022169561A1 (en) * 2021-02-05 2022-08-11 Applied Materials, Inc. Apparatus, methods, and systems of using hydrogen radicals for thermal annealing
WO2023181367A1 (ja) 2022-03-25 2023-09-28 株式会社ニコン 矯正装置、露光装置、コータ・デベロッパ装置、露光システム、露光方法、及びデバイス製造方法
CN115747955A (zh) * 2022-10-26 2023-03-07 中环领先半导体材料有限公司 一种改善Logic产品衬底外延后弯曲度和翘曲度工艺
US12224192B2 (en) 2022-11-10 2025-02-11 Applied Materials, Inc. Bowed substrate clamping method, apparatus, and system

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6189694A (ja) * 1984-10-09 1986-05-07 ソニー株式会社 プリント基板の形状矯正方法及びその装置
US20030080112A1 (en) * 2000-02-01 2003-05-01 Van Bilsen Frank B.M. System of controlling the temperature of a processing chamber
CN102481650A (zh) * 2009-08-27 2012-05-30 阿有米工业股份有限公司 加热熔融处理装置以及加热熔融处理方法
US20140103806A1 (en) * 2012-10-17 2014-04-17 Lam Research Corporation Pressure controlled heat pipe temperature control plate

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01160080A (ja) * 1987-12-17 1989-06-22 Sumitomo Bakelite Co Ltd プリント回路板の反り直し方法
JPH07112715B2 (ja) * 1993-10-28 1995-12-06 菱華産業株式会社 エアシャワーを用いた遠赤外線アニール機
JPH0825086A (ja) * 1994-07-07 1996-01-30 Tanaka Seisakusho Kk 鋼材加工装置
JP5374039B2 (ja) * 2007-12-27 2013-12-25 東京エレクトロン株式会社 基板処理方法、基板処理装置及び記憶媒体
JP5674645B2 (ja) * 2008-05-28 2015-02-25 アイクストロン・アーゲー 温度勾配型化学気相成長（ｔｇｅ−ｃｖｄ）
JP5673523B2 (ja) 2011-12-28 2015-02-18 東京エレクトロン株式会社 基板処理方法、基板処理装置及び記憶媒体
JP2015035584A (ja) * 2013-07-11 2015-02-19 東京エレクトロン株式会社 熱処理装置及び成膜システム
JP5905509B2 (ja) 2014-05-14 2016-04-20 東京エレクトロン株式会社 接合装置、接合システム、接合方法、プログラム及びコンピュータ記憶媒体

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6189694A (ja) * 1984-10-09 1986-05-07 ソニー株式会社 プリント基板の形状矯正方法及びその装置
US20030080112A1 (en) * 2000-02-01 2003-05-01 Van Bilsen Frank B.M. System of controlling the temperature of a processing chamber
CN102481650A (zh) * 2009-08-27 2012-05-30 阿有米工业股份有限公司 加热熔融处理装置以及加热熔融处理方法
US20140103806A1 (en) * 2012-10-17 2014-04-17 Lam Research Corporation Pressure controlled heat pipe temperature control plate

Also Published As

Publication number Publication date
SG10202108210SA (en) 2021-09-29
CN107534003A (zh) 2018-01-02
KR20180002714A (ko) 2018-01-08
JP6839096B2 (ja) 2021-03-03
US20160322234A1 (en) 2016-11-03
TWI697974B (zh) 2020-07-01
JP2018518044A (ja) 2018-07-05
US9818624B2 (en) 2017-11-14
KR102589733B1 (ko) 2023-10-17
TW201705335A (zh) 2017-02-01
SG11201708116RA (en) 2017-11-29

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