TWI697974B - 用於校正基板變形的方法與設備 - Google Patents

用於校正基板變形的方法與設備 Download PDF

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Publication number
TWI697974B
TWI697974B TW105113509A TW105113509A TWI697974B TW I697974 B TWI697974 B TW I697974B TW 105113509 A TW105113509 A TW 105113509A TW 105113509 A TW105113509 A TW 105113509A TW I697974 B TWI697974 B TW I697974B
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TW
Taiwan
Prior art keywords
substrate
predetermined temperature
processing chamber
temperature
support
Prior art date
Application number
TW105113509A
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English (en)
Chinese (zh)
Other versions
TW201705335A (zh
Inventor
劉彥信
高德豐
希魯納弗卡羅蘇司瑞斯坎薩羅傑
伊魯瑪賴卡蒂克
白永勝
蘇俊良
Original Assignee
美商應用材料股份有限公司
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Application filed by 美商應用材料股份有限公司 filed Critical 美商應用材料股份有限公司
Publication of TW201705335A publication Critical patent/TW201705335A/zh
Application granted granted Critical
Publication of TWI697974B publication Critical patent/TWI697974B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H01L21/3247—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering for altering the shape, e.g. smoothing the surface
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B17/00—Furnaces of a kind not covered by any of groups F27B1/00 - F27B15/00
    • F27B17/0016—Chamber type furnaces
    • F27B17/0025—Chamber type furnaces specially adapted for treating semiconductor wafers
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B9/00—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity
    • F27B9/02—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity of multiple-track type; of multiple-chamber type; Combinations of furnaces
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B9/00—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity
    • F27B9/06—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity heated without contact between combustion gases and charge; electrically heated
    • F27B9/10—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity heated without contact between combustion gases and charge; electrically heated heated by hot air or gas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Combustion & Propulsion (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
TW105113509A 2015-04-29 2016-04-29 用於校正基板變形的方法與設備 TWI697974B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IN1190DE2015 2015-04-29
IN1190/DEL/2015 2015-04-29

Publications (2)

Publication Number Publication Date
TW201705335A TW201705335A (zh) 2017-02-01
TWI697974B true TWI697974B (zh) 2020-07-01

Family

ID=57205753

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105113509A TWI697974B (zh) 2015-04-29 2016-04-29 用於校正基板變形的方法與設備

Country Status (6)

Country Link
US (1) US9818624B2 (enExample)
JP (1) JP6839096B2 (enExample)
KR (1) KR102589733B1 (enExample)
CN (1) CN107534003B (enExample)
SG (2) SG11201708116RA (enExample)
TW (1) TWI697974B (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10325790B2 (en) * 2016-04-29 2019-06-18 Applied Materials, Inc. Methods and apparatus for correcting substrate deformity
US10612135B2 (en) * 2016-07-19 2020-04-07 Applied Materials, Inc. Method and system for high temperature clean
KR102015336B1 (ko) * 2017-06-12 2019-08-28 삼성전자주식회사 반도체 패키지 기판의 휨 감소 방법 및 휨 감소 장치
CN108803702B (zh) * 2018-06-26 2020-12-29 武汉华星光电技术有限公司 阵列基板制程中的温度调控系统及方法
US10889894B2 (en) * 2018-08-06 2021-01-12 Applied Materials, Inc. Faceplate with embedded heater
US11421316B2 (en) * 2018-10-26 2022-08-23 Applied Materials, Inc. Methods and apparatus for controlling warpage in wafer level packaging processes
US20210057238A1 (en) * 2019-08-20 2021-02-25 Applied Materials, Inc. Methods and apparatus for contactless substrate warpage correction
JP7365423B2 (ja) * 2019-10-04 2023-10-19 東京エレクトロン株式会社 加熱冷却装置及び加熱冷却方法
US11177146B2 (en) * 2019-10-31 2021-11-16 Applied Materials, Inc. Methods and apparatus for processing a substrate
WO2022169561A1 (en) * 2021-02-05 2022-08-11 Applied Materials, Inc. Apparatus, methods, and systems of using hydrogen radicals for thermal annealing
JPWO2023181367A1 (enExample) 2022-03-25 2023-09-28
CN115747955A (zh) * 2022-10-26 2023-03-07 中环领先半导体材料有限公司 一种改善Logic产品衬底外延后弯曲度和翘曲度工艺
US12224192B2 (en) 2022-11-10 2025-02-11 Applied Materials, Inc. Bowed substrate clamping method, apparatus, and system

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140103806A1 (en) * 2012-10-17 2014-04-17 Lam Research Corporation Pressure controlled heat pipe temperature control plate
JP2015035584A (ja) * 2013-07-11 2015-02-19 東京エレクトロン株式会社 熱処理装置及び成膜システム

Family Cites Families (10)

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Publication number Priority date Publication date Assignee Title
JPS6189694A (ja) * 1984-10-09 1986-05-07 ソニー株式会社 プリント基板の形状矯正方法及びその装置
JPH01160080A (ja) * 1987-12-17 1989-06-22 Sumitomo Bakelite Co Ltd プリント回路板の反り直し方法
JPH07112715B2 (ja) * 1993-10-28 1995-12-06 菱華産業株式会社 エアシャワーを用いた遠赤外線アニール機
JPH0825086A (ja) * 1994-07-07 1996-01-30 Tanaka Seisakusho Kk 鋼材加工装置
US6191399B1 (en) * 2000-02-01 2001-02-20 Asm America, Inc. System of controlling the temperature of a processing chamber
JP5374039B2 (ja) 2007-12-27 2013-12-25 東京エレクトロン株式会社 基板処理方法、基板処理装置及び記憶媒体
WO2009144456A1 (en) * 2008-05-28 2009-12-03 Aixtron Ag Thermal gradient enhanced chemical vapour deposition (tge-cvd)
JP5424201B2 (ja) * 2009-08-27 2014-02-26 アユミ工業株式会社 加熱溶融処理装置および加熱溶融処理方法
JP5673523B2 (ja) 2011-12-28 2015-02-18 東京エレクトロン株式会社 基板処理方法、基板処理装置及び記憶媒体
JP5905509B2 (ja) 2014-05-14 2016-04-20 東京エレクトロン株式会社 接合装置、接合システム、接合方法、プログラム及びコンピュータ記憶媒体

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140103806A1 (en) * 2012-10-17 2014-04-17 Lam Research Corporation Pressure controlled heat pipe temperature control plate
JP2015035584A (ja) * 2013-07-11 2015-02-19 東京エレクトロン株式会社 熱処理装置及び成膜システム

Also Published As

Publication number Publication date
CN107534003A (zh) 2018-01-02
CN107534003B (zh) 2022-07-26
TW201705335A (zh) 2017-02-01
SG11201708116RA (en) 2017-11-29
KR102589733B1 (ko) 2023-10-17
KR20180002714A (ko) 2018-01-08
SG10202108210SA (en) 2021-09-29
JP6839096B2 (ja) 2021-03-03
US9818624B2 (en) 2017-11-14
JP2018518044A (ja) 2018-07-05
US20160322234A1 (en) 2016-11-03

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