CN107452420B - 存储装置和存储器控制器 - Google Patents
存储装置和存储器控制器 Download PDFInfo
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- CN107452420B CN107452420B CN201610374789.6A CN201610374789A CN107452420B CN 107452420 B CN107452420 B CN 107452420B CN 201610374789 A CN201610374789 A CN 201610374789A CN 107452420 B CN107452420 B CN 107452420B
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- 238000010586 diagram Methods 0.000 description 14
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- 230000003044 adaptive effect Effects 0.000 description 1
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
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Priority Applications (1)
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CN201610374789.6A CN107452420B (zh) | 2016-05-31 | 2016-05-31 | 存储装置和存储器控制器 |
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CN201610374789.6A CN107452420B (zh) | 2016-05-31 | 2016-05-31 | 存储装置和存储器控制器 |
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CN107452420A CN107452420A (zh) | 2017-12-08 |
CN107452420B true CN107452420B (zh) | 2020-01-10 |
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Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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KR102546652B1 (ko) * | 2018-09-07 | 2023-06-22 | 삼성전자주식회사 | 반도체 메모리 장치 및 이를 포함하는 메모리 시스템 |
US10585835B1 (en) * | 2018-11-20 | 2020-03-10 | Micron Technology, Inc. | Methods and apparatuses for independent tuning of on-die termination impedances and output driver impedances, and related semiconductor devices and systems |
CN115602215A (zh) | 2021-07-09 | 2023-01-13 | 长鑫存储技术有限公司(Cn) | 使能控制电路以及半导体存储器 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101779373A (zh) * | 2007-06-08 | 2010-07-14 | 莫塞德技术公司 | 用于输入/输出缓冲器的动态阻抗控制 |
CN104637526A (zh) * | 2013-11-07 | 2015-05-20 | 瑞萨电子株式会社 | 半导体器件 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2010170597A (ja) * | 2009-01-20 | 2010-08-05 | Elpida Memory Inc | 半導体記憶装置及びそのリードプリアンブル信号の制御方法、並びにデータ伝送システム |
JP5433593B2 (ja) * | 2011-01-21 | 2014-03-05 | 株式会社東芝 | メモリインターフェイスのタイミング調整回路および方法 |
US9514420B2 (en) * | 2014-08-15 | 2016-12-06 | Rambus Inc. | Strobe gating adaption and training in a memory controller |
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- 2016-05-31 CN CN201610374789.6A patent/CN107452420B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101779373A (zh) * | 2007-06-08 | 2010-07-14 | 莫塞德技术公司 | 用于输入/输出缓冲器的动态阻抗控制 |
CN104637526A (zh) * | 2013-11-07 | 2015-05-20 | 瑞萨电子株式会社 | 半导体器件 |
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Application publication date: 20171208 Assignee: Shanghai Li Ke Semiconductor Technology Co.,Ltd. Assignor: LEADCORE TECHNOLOGY Co.,Ltd. Contract record no.: 2018990000159 Denomination of invention: Storage device and memory controller License type: Common License Record date: 20180615 |
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TA01 | Transfer of patent application right |
Effective date of registration: 20180903 Address after: 201206 China (Shanghai) free trade pilot area, 1258 moon 3, fourth floor, A406 room. Applicant after: Chen core technology Co.,Ltd. Applicant after: DATANG SEMICONDUCTOR DESIGN Co.,Ltd. Address before: 200233 4 building, No. 333, No. 41, Qinjiang Road, Shanghai, Xuhui District Applicant before: LEADCORE TECHNOLOGY Co.,Ltd. Applicant before: DATANG SEMICONDUCTOR DESIGN Co.,Ltd. |
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Effective date of registration: 20221110 Address after: 201206 Pudong New Area, Shanghai, China (Shanghai) free trade pilot area, 1258 A406 3 fourth story room. Patentee after: Chen core technology Co.,Ltd. Patentee after: Chenxin Technology Co.,Ltd. Address before: 201206 China (Shanghai) free trade pilot area, 1258 moon 3, fourth floor, A406 room. Patentee before: Chen core technology Co.,Ltd. Patentee before: DATANG SEMICONDUCTOR DESIGN Co.,Ltd. |
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CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: 201206 Pudong New Area, Shanghai, China (Shanghai) free trade pilot area, 1258 A406 3 fourth story room. Patentee after: Chen core technology Co.,Ltd. Patentee after: Chenxin Technology Co.,Ltd. Address before: 201206 Pudong New Area, Shanghai, China (Shanghai) free trade pilot area, 1258 A406 3 fourth story room. Patentee before: Chen core technology Co.,Ltd. Patentee before: Chenxin Technology Co.,Ltd. |